CN102683588A - Organic field effect transistor structure and preparation method thereof - Google Patents
Organic field effect transistor structure and preparation method thereof Download PDFInfo
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- CN102683588A CN102683588A CN2011100575664A CN201110057566A CN102683588A CN 102683588 A CN102683588 A CN 102683588A CN 2011100575664 A CN2011100575664 A CN 2011100575664A CN 201110057566 A CN201110057566 A CN 201110057566A CN 102683588 A CN102683588 A CN 102683588A
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Abstract
The invention discloses an organic field effect transistor structure, comprising: an insulating substrate; a gate electrode formed over the insulating substrate; a first gate dielectric layer covering the insulating substrate and the gate electrode; source and drain electrodes formed on two sides of the channel region on the surface of the first gate dielectric layer; and a stacked structure formed on the channel region between the source and drain electrodes. The structure can effectively increase the channel number of the device on the premise of not increasing the area of the device to form a multi-channel device, thereby increasing the driving capability of the device and providing a feasible idea for preparing a high-density organic circuit. Meanwhile, the invention also discloses a method for preparing the organic field effect transistor structure.
Description
Technical field
The present invention relates to the organic electronic field that learns a skill, particularly a kind of organic field effect tube structure and preparation method thereof.
Background technology
Along with deepening continuously of information technology, electronic product has got into each link of people's life and work.People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, can realize that therefore the organic microelectric technique based on the organic polymer semi-conducting material of these characteristics has obtained the many concerns of People more and more under this trend.
Organic field effect tube is as the basic device of organic circuit, and its performance is to the performance decisive role of circuit.Wherein mobility has determined the speed of device work, and then influences the operating frequency of circuit.Voltage comprises operating voltage and threshold voltage, has determined the power consumption of device and circuit.
The present invention proposes a kind of novel organic field effect tube structure; This structure can increase the raceway groove quantity of device effectively under the prerequisite that does not increase device area; Form many channel devices; Thereby increase the driving force of device, a kind of feasible thinking is provided for preparing highdensity organic circuit.
The method of this organic field effect tube of making that the present invention provides in addition adopts the technology of all electrodes of preparation earlier; Effectively avoided in the electrode production process organic functional thin film being damaged; And can be compatible with existing silicon micromachining technology; Can make full use of existing equipment, reduce the cost of new unit preparation.
Summary of the invention
The technical problem that (one) will solve
In view of this, one object of the present invention is to provide a kind of organic field effect tube structure, and this structure can increase the raceway groove quantity of device effectively under the prerequisite that does not increase device area, form many channel devices, thereby increases the driving force of device.
Another object of the present invention is to provide a kind of preparation method of organic field effect tube, for realizing the organic unit component of many raceway grooves a kind of feasible method is provided.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
A kind of organic field effect tube structure comprises:
Dielectric substrate;
Be formed at the gate electrode on this dielectric substrate;
Be covered in the first kind gate dielectric layer on this dielectric substrate and this gate electrode;
Be formed at the source-drain electrode of these both sides, first kind gate dielectric layer surface channel zone; And
Be formed at the stacked structure on the channel region between this source-drain electrode.
In the such scheme, said stacked structure is formed by organic semiconductor layer and second type of gate dielectric layer periodicity alternated, and organic semiconductor layer is on channel region between this source-drain electrode.The periodicity of said stacked structure is at least 2.The thickness of said organic semiconductor layer and second type of gate dielectric layer is all less than 30nm, and periodically the gross thickness of stacked structure is less than the thickness of source-drain electrode film.Said organic semiconductor layer contacts with the sidewall of source-drain electrode.
In the such scheme, said dielectric substrate is long silicon chip, insulating glass or the ambroin film that silicon oxide film or silicon nitride film are arranged.
In the such scheme, the material that said gate electrode layer adopts comprises gold, aluminium, platinum, copper, silver, nickel, chromium, titanium, tantalum and conductive organic matter PEDOT:PSS.
In the such scheme, the material that the metal electrode employing is leaked in said source comprises gold, platinum, silver, copper, aluminium or PEDOT:PSS.
In the such scheme, said first kind gate dielectric layer is covered in whole surface gate electrode, isolate gate electrode and source-drain electrode; Second type of gate dielectric layer only is present in channel region, contact with organic semiconductor layer, and with the organic semiconductor layer alternated, form periodic structure; The material of said first kind gate dielectric layer and second type of gate dielectric layer employing comprises silica, silicon nitride, zirconia, aluminium oxide, tantalum oxide, hafnium oxide, polyimides PI, polyethylene pyrrolidone PVP, polymethyl acrylate PMMA and Parylene parylene.
In the such scheme, the material that said organic semiconductor layer adopts comprises pentacene, metal phthalocyanine CuPc, P3HT, thiophene or red glimmering rare.
A kind of method for preparing the organic field effect tube structure comprises:
The patterned gate electrode layer of preparation on dielectric substrate;
Preparation first kind gate dielectric layer covers the whole sample surface on gate electrode layer;
The patterned source-drain electrode of preparation on first kind gate dielectric layer surface;
On channel region, alternately prepare organic semiconductor layer and second type of gate dielectric layer, on channel region, form stacked structure, accomplish preparation of devices with a plurality of cycles.
In the such scheme, said on dielectric substrate the preparation patterned gate electrode layer step in, the membrane deposition method of gate electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing or spin coating; The graphical employing photoetching of metal electrode adds etching or photoetching adds metal lift-off material; Inkjet printing technology is adopted in the preparation of polymer electrode.
In the such scheme, said on gate electrode layer in the step of preparation first kind gate dielectric layer, first kind gate dielectric layer film prepares through low-pressure chemical vapor deposition, sputter, ald, electron beam evaporation, ion assisted deposition or spin coating technique.
In the such scheme, said on the first kind gate dielectric layer surface preparation patterned source-drain electrode step in, the membrane deposition method of source-drain electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing or spin coating; The graphical employing photoetching of metal electrode adds etching or photoetching adds metal lift-off material; Inkjet printing technology is adopted in the preparation of polymer electrode.
In the such scheme; In the said step that on channel region, alternately prepares organic semiconductor layer and second type of gate dielectric layer; Organic semiconductive layer through vacuum thermal evaporation, spin coating, drip and be coated with or inkjet printing technology prepares, second type of gate dielectric layer prepares through low-pressure chemical vapor deposition, sputter, ald, electron beam evaporation, ion assisted deposition or spin coating technique.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, this organic field effect tube structure provided by the invention; Can under the prerequisite that does not increase device area, increase the raceway groove quantity of device effectively; Form many channel devices, thereby increase the driving force of device, a kind of feasible thinking is provided for preparing highdensity organic circuit.
2, the method for this organic field effect tube structure of making that provides in addition of the present invention; Adopt the technology of all electrodes of preparation earlier; Effectively avoided in the electrode production process organic functional thin film being damaged; And can be compatible with existing silicon micromachining technology, can make full use of existing equipment, reduce the cost of new unit preparation.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with accompanying drawing and examples of implementation, the present invention is done detailed description,
Fig. 1 is the sketch map of organic field effect tube structure provided by the invention;
Fig. 2-1 is the preparation flow figure of organic field effect tube structure provided by the invention to Fig. 2-4;
Fig. 3 is the sketch map according to the organic field effect tube structure of the embodiment of the invention;
Fig. 4-1 is the method flow diagram of accordinging to the preparation organic field effect tube structure of the embodiment of the invention to Fig. 4-9.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The invention provides a kind of organic field effect tube structure, its structural representation is as shown in Figure 1.Device architecture comprises dielectric substrate 101, gate electrode 102, first kind gate medium 103, source-drain electrode 104, organic semiconductor layer 105 and second type of gate medium 106.Organic semiconductor layer 105 and second type of gate medium 106 alternated form periodic stacked structure, and between source-drain electrode, form channel region.
The material of the gate electrode 102 among the present invention comprises gold, aluminium, platinum, copper, silver, nickel, chromium, titanium, tantalum and PEDOT:PSS.
First kind gate medium 103 among the present invention is between gate electrode 102 and source, drain electrode 104, and two sides of gate medium 103 wherein contact with gate electrode 102 with organic semiconductor 105 respectively.The dielectric layer material comprises silica, silicon nitride, zirconia, aluminium oxide, tantalum oxide, hafnium oxide, polyimides (PI), polyethylene pyrrolidone (PVP), polymethyl acrylate (PMMA) and Parylene (parylene).
The material of the source among the present invention, drain electrode 104 is all identical with size, and electrode material comprises gold, platinum, silver, copper, aluminium and PEDOT:PSS.
Ground floor organic semiconductor thin-film in the organic semiconductor layer 105 among the present invention is clipped between the first kind and the second type of gate medium, and the side contacts with the sidewall of source-drain electrode.Organic semiconducting materials comprises pentacene, metal phthalocyanine (CuPc), P3HT, thiophene and red glimmering rare.
Fig. 2-1 is the preparation flow figure of organic field effect tube structure provided by the invention to Fig. 2-4, and this method comprises:
Shown in Fig. 2-1, the patterned gate electrode 202 of preparation on dielectric substrate 201, the membrane deposition method of gate electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing, spin coating.The first deposit film of graphical employing of metal electrode wherein, photoetching again, etching form the technology of electrode pattern, perhaps adopt first photoetching to form corresponding photoresist figure, and depositing metal films is then removed the technology of excess metal film again through metal-stripping.The preparation of polymer electrode realizes simultaneously that through inkjet printing technology deposition is with graphical.
Shown in Fig. 2-2, deposition first kind gate dielectric layer 203 on gate electrode layer 202.Inorganic gate dielectric layer is through low-pressure chemical vapor deposition, and methods such as sputter or ald deposit, and make it have good step coverage.The preparation of organic dielectric layer comes the deposition medium film through spin coating technique, and annealed processing forms high-quality film.
Shown in Fig. 2-3, at the patterned source of first kind gate dielectric layer 203 surface preparation, drain electrode 204.The membrane deposition method of source, drain electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing, spin coating.The first deposit film of graphical employing of metal electrode wherein, photoetching again, etching form the technology of electrode pattern, perhaps adopt first photoetching to form corresponding photoresist figure, and depositing metal films is then removed the technology of excess metal film again through metal-stripping.The preparation of polymer electrode realizes simultaneously that through inkjet printing technology deposition is with graphical.
Shown in Fig. 2-4, alternately prepare organic semiconductor layer 205 and second type of gate dielectric layer 206.Organic semiconductive layer film wherein through vacuum thermal evaporation, spin coating, drip be coated with, inkjet printing technology prepares.Remove the organic semiconducting materials beyond the channel region through anisotropic dry etching then, form patterned active layer.Second type of gate dielectric layer film prepares through low-pressure chemical vapor deposition, sputter, ald, electron beam evaporation, ion assisted deposition or spin coating technique.The graphical of second type of gate medium perhaps adopts the material removal medium beyond the channel region hollow out mask to stop that in deposition process the dielectric material beyond the channel region deposits on the sample through anisotropic dry etching.
Embodiment
As shown in Figure 3, Fig. 3 is the sketch map according to the organic field effect tube structure of the embodiment of the invention.Device architecture comprises dielectric substrate 301, gate electrode 302, first kind gate medium 303, source, drain electrode 304, organic semiconductor layer 305 and second type of gate medium 306.Dielectric substrate is the silicon chip of 300nm silicon oxide film of having grown; Gate electrode is the thick aluminum metal film of 50nm; First kind gate medium is the thick aluminum oxide film of 100nm; Source, the very gold thin film of 200nm of leaking electricity, organic semiconductor is the pentacene thin film of 20nm, second type of polymethyl acrylate film that gate medium is 20nm.
Fig. 4-1 is that the preparation method of this embodiment is following according to the method flow diagram of the preparation organic field effect tube structure of the embodiment of the invention to Fig. 4-9:
Shown in Fig. 4-1, the positive photoresist film of 2 microns of spin coatings on the silicon oxide insulation substrate 401 of 300nm, exposure is then developed, and prepares the photoresist graph layer 402 of gate electrode.
Shown in Fig. 4-2, pass through the thick aluminum metal film 403 of electron-beam evaporation 50nm at sample surfaces.
Shown in Fig. 4-3, put into acetone soln to sample, peel off the metallic film of glue film surface from sample surfaces in the time of the photoresist dissolving, staying to deposit to does not have photoresist regional metal film, forms patterned gate electrode 404.
Shown in Fig. 4-4, the aluminum oxide film that on patterned metallic aluminium gate electrode layer 404 surfaces, prepares 100nm through ald is as first kind gate dielectric layer 405.
Shown in Fig. 4-5,, adopt photoetching technique to prepare the photoresist graphic films 406 of source, drain electrode correspondence then at the photoresist film of 2 microns of the sample surfaces coatings for preparing first kind gate dielectric layer 405.
Shown in Fig. 4-6; In the gold thin film of sample surfaces through electron-beam evaporation 200nm, be immersed in the acetone soln sample is whole again, dissolve photoresist; Simultaneously the surperficial metal removal of photoresist, stay on first kind gate dielectric layer patterned gold thin film as source, drain electrode 407.
Shown in Fig. 4-7, at the ground floor organic semiconductor thin-film 408 of the sample surfaces that has prepared source, drain electrode 407 through the pentacene thin film conduct of vacuum thermal evaporation deposition 20nm.
Shown in Fig. 4-8, the PMMA film for preparing 20nm through spin coating technique at sample surfaces is as second type of gate dielectric membrane 409.
Shown in Fig. 4-9, repeating step eight and step 9, alternating deposit organic semiconductor thin-film and second type of gate dielectric membrane, the stacked structure in 4 cycles of formation.Remove the stacked structure beyond the channel region through anisotropic dry etching then, form patterned organic semiconductor and second type of stacked structure that gate medium constitutes, thereby accomplish preparation of devices.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. an organic field effect tube structure is characterized in that, comprising:
Dielectric substrate;
Be formed at the gate electrode on this dielectric substrate;
Be covered in the first kind gate dielectric layer on this dielectric substrate and this gate electrode;
Be formed at the source-drain electrode of these both sides, first kind gate dielectric layer surface channel zone; And
Be formed at the stacked structure on the channel region between this source-drain electrode.
2. organic field effect tube structure according to claim 1; It is characterized in that; Said stacked structure is formed by organic semiconductor layer and second type of gate dielectric layer periodicity alternated, and organic semiconductor layer is on channel region between this source-drain electrode.
3. organic field effect tube structure according to claim 2 is characterized in that, the periodicity of said stacked structure is at least 2.
4. organic field effect tube structure according to claim 2 is characterized in that, the thickness of said organic semiconductor layer and second type of gate dielectric layer is all less than 30nm, and periodically the gross thickness of stacked structure is less than the thickness of source-drain electrode film.
5. organic field effect tube structure according to claim 2 is characterized in that, said organic semiconductor layer contacts with the sidewall of source-drain electrode.
6. organic field effect tube structure according to claim 1 is characterized in that, said dielectric substrate is long silicon chip, insulating glass or the ambroin film that silicon oxide film or silicon nitride film are arranged.
7. organic field effect tube structure according to claim 1 is characterized in that, the material that said gate electrode layer adopts comprises gold, aluminium, platinum, copper, silver, nickel, chromium, titanium, tantalum and conductive organic matter PEDOT:PSS.
8. organic field effect tube structure according to claim 1 is characterized in that, the material that the metal electrode employing is leaked in said source comprises gold, platinum, silver, copper, aluminium or PEDOT:PSS.
9. organic field effect tube structure according to claim 1 is characterized in that, said first kind gate dielectric layer is covered in whole surface gate electrode, isolate gate electrode and source-drain electrode; Second type of gate dielectric layer only is present in channel region, contact with organic semiconductor layer, and with the organic semiconductor layer alternated, form periodic structure;
The material of said first kind gate dielectric layer and second type of gate dielectric layer employing comprises silica, silicon nitride, zirconia, aluminium oxide, tantalum oxide, hafnium oxide, polyimides PI, polyethylene pyrrolidone PVP, polymethyl acrylate PMMA and Parylene parylene.
10. organic field effect tube structure according to claim 1 is characterized in that, the material that said organic semiconductor layer adopts comprises pentacene, metal phthalocyanine CuPc, P3HT, thiophene or red glimmering rare.
11. a method for preparing the organic field effect tube structure is characterized in that, comprising:
The patterned gate electrode layer of preparation on dielectric substrate;
Preparation first kind gate dielectric layer covers the whole sample surface on gate electrode layer;
The patterned source-drain electrode of preparation on first kind gate dielectric layer surface;
On channel region, alternately prepare organic semiconductor layer and second type of gate dielectric layer, on channel region, form stacked structure, accomplish preparation of devices with a plurality of cycles.
12. the method for preparing the organic field effect tube structure according to claim 11; It is characterized in that; Said on dielectric substrate the preparation patterned gate electrode layer step in, the membrane deposition method of gate electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing or spin coating; The graphical employing photoetching of metal electrode adds etching or photoetching adds metal lift-off material; Inkjet printing technology is adopted in the preparation of polymer electrode.
13. the method for preparing the organic field effect tube structure according to claim 11; It is characterized in that; Said on gate electrode layer in the step of preparation first kind gate dielectric layer, first kind gate dielectric layer film prepares through low-pressure chemical vapor deposition, sputter, ald, electron beam evaporation, ion assisted deposition or spin coating technique.
14. the method for preparing the organic field effect tube structure according to claim 11; It is characterized in that; Said on the first kind gate dielectric layer surface preparation patterned source-drain electrode step in, the membrane deposition method of source-drain electrode layer comprises the hot physical deposition of vacuum, electron beam deposition, ion assisted deposition, sputter, inkjet printing or spin coating; The graphical employing photoetching of metal electrode adds etching or photoetching adds metal lift-off material; Inkjet printing technology is adopted in the preparation of polymer electrode.
15. the method for preparing the organic field effect tube structure according to claim 11; It is characterized in that; In the said step that on channel region, alternately prepares organic semiconductor layer and second type of gate dielectric layer; Organic semiconductive layer through vacuum thermal evaporation, spin coating, drip and be coated with or inkjet printing technology prepares, second type of gate dielectric layer prepares through low-pressure chemical vapor deposition, sputter, ald, electron beam evaporation, ion assisted deposition or spin coating technique.
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