CN102655215A - Organic field effect transistor structure and preparation method thereof - Google Patents
Organic field effect transistor structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an organic field effect transistor structure with a top gate structure or a bottom gate structure and a preparation method thereof. The transistor structure comprises an insulating substrate, an active layer, a gate dielectric, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are embedded in the gate dielectric layer or the insulating layer, and the upper surfaces of the source electrode and the drain electrode are flush with the upper surface of the gate dielectric layer or the insulating layer. The source electrode and the drain electrode are positioned below the active layer and form a bottom contact structure with the active layer. The invention greatly increases the effective contact area between the source electrode, the drain electrode and the active layer by using the embedded source electrode and drain electrode structure, thereby improving the injection of carriers. Meanwhile, the invention provides a preparation method of the transistor structure. The etching of the groove and the preparation of the source and drain electrodes share one layer of photoresist pattern, so that the process complexity and difficulty are effectively reduced.
Description
Technical field
The present invention relates to organic electronic and learn field, particularly a kind of organic field effect tube structure and preparation method thereof with top gate structure or bottom grating structure.
Background technology
Along with deepening continuously of information technology, electronic product has got into each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are being difficult to satisfy these requirements aspect technology and the cost, can realize that therefore the microelectric technique based on organic semiconducting materials of these characteristics has obtained the many concerns of People more and more under this trend.
Organic field effect tube is as the basic device of organic circuit, and its performance is to the performance decisive role of circuit.Except the influence of material therefor to device performance, the structure of organic field effect tube also has bigger influence to its performance.Organic field effect tube is made up of five parts such as substrate, gate electrode, gate medium, organic semiconductor and source-drain electrode usually.According to the position distribution of this several sections, organic field effect tube can be divided into and four kinds of structures such as contacts at the bottom of top grid top contact, the top grid at the bottom of contact, bottom gate top contact and the bottom gate.Wherein " contact " refer to the contact between source, drain electrode and the active layer.
Experiment showed, that in a large number the contact between source, drain electrode and the active layer injects decisive role to the electric charge of organic field effect tube.The effect of contact mainly uses contact resistance to weigh, when contact do bad the time, what contact resistance can be very is big, causes electric charge to be difficult to be injected into the transistorized raceway groove from electrode.The factor that influences contact resistance has a lot, except the work function of used source drain electrode material, and the contact area between source-drain electrode film and the organic semiconductor, the modification situation at interface also has very big influence to contact resistance.Because 10nm was with interior zone near the conductive layer of organic field effect tube mainly concentrated on channel interface; So in used usually end contact structure; Effective contact area between source, drain electrode and the organic semiconductor thin-film is very little, thereby has caused contact resistance very big.
In order to address this problem; The present invention proposes a kind of new contact electrode structure; Through being embedded in source-drain electrode in dielectric substrate or the gate dielectric layer; Make the effective contact area between source-drain electrode and the organic semiconductor thin-film increase greatly, thereby reduced contact resistance, improve the electric charge injection efficiency of device.The invention provides the preparation method of this transistor arrangement simultaneously.The etching of groove and the shared one deck photoresist of the preparation of source-drain electrode figure effectively reduce process complexity and difficulty.
Summary of the invention
The technical problem that (one) will solve
The object of the invention is to provide a kind of organic field effect tube structure; Through using Embedded source, drain electrode; Make the effective contact area between source leakage, electrode and the organic semiconductor thin-film increase greatly, thereby reduced contact resistance, improve the electric charge injection efficiency of device.
The invention provides the preparation method of said organic field effect tube structure simultaneously, the photoresist figure of the etching through shared groove and the preparation of source-drain electrode effectively reduces preparation technology's complexity and difficulty.
(2) technical scheme
For achieving the above object, the technical scheme that the present invention adopts is following:
A kind of organic field effect tube structure with top gate structure comprises:
Dielectric substrate;
Be embedded in this dielectric substrate and with the source electrode and the drain electrode of this dielectric substrate flush;
Be formed at the active layer on this dielectric substrate;
Be formed at the gate dielectric layer on this active layer; And
Be formed at the gate electrode on this gate medium.
In the such scheme, said dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.
In the such scheme, said source electrode and drain electrode are positioned at the active layer below, form end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.
In the such scheme, said active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.
In the such scheme, said gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.
In the such scheme, said gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.
A kind of preparation method with organic field effect tube structure of top gate structure comprises:
The groove of preparation embedding source, drain electrode on dielectric substrate;
Preparation source, drain electrode on dielectric substrate;
Deposit active layer preparing on the substrate of source-drain electrode;
On active layer, deposit gate dielectric layer; And
At gate dielectric layer surface preparation gate electrode, accomplish preparation of devices.
In the such scheme, said on dielectric substrate the step of the groove of preparation embedding source, drain electrode, be through photoetching method definition photoresist figure earlier, then through lithographic method with this photoresist figure transfer on dielectric substrate, form required groove.
In the such scheme; Said on dielectric substrate the step of preparation source, drain electrode; Be depositing metal films on the dielectric substrate of embedding source, drain electrode groove to be arranged in preparation through electron beam evaporation, sputter or thermal evaporation method; Metallic film unnecessary outside the groove is removed the preparation of completion source, drain electrode through the method for metal-stripping again; Organic source, drain electrode then adopt inkjet technology to deposit and graphically, adopt organic solvent to remove photoresist again after preparing source, drain electrode.
In the such scheme, the said metallic film that is used to form source, drain electrode, the deep equality of its thickness and the groove that on dielectric substrate, prepares is with the upper surface and the dielectric substrate flush of assurance source, drain electrode.
In the such scheme, said in the step for preparing deposition active layer on the substrate of source-drain electrode, active layer forms through vacuum heat deposition, spin coating technique.
In the such scheme; The said step that on active layer, deposits gate dielectric layer, gate dielectric layer is inorganic gate dielectric layer or organic gate dielectric layer, wherein; Inorganic gate dielectric layer deposits through low-pressure chemical vapor deposition, sputter or Atomic layer deposition method, and organic gate dielectric layer deposits through spin coating technique.
In the such scheme; Said step at gate dielectric layer surface preparation gate electrode, gate electrode are metal gate electrode or organic gate electrode, wherein; Metal gate electrode adopts its corresponding glue pattern of carving of photoetching technique definition; Come plated metal through electron beam evaporation, sputter or thermal evaporation method again, come transition diagram through the method for metal-stripping at last, thereby prepare metal gate electrode; Organic gate electrode then adopts inkjet technology to prepare.
A kind of organic field effect tube structure with bottom grating structure comprises:
Dielectric substrate;
Be formed at the gate electrode on this dielectric substrate;
Be formed on this dielectric substrate and be coated on the gate dielectric layer on this gate electrode;
Be embedded in this gate dielectric layer and with the source electrode and the drain electrode of this gate dielectric layer flush; And
Be formed at the active layer on this gate dielectric layer.
In the such scheme, said dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.
In the such scheme, said gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.
In the such scheme, said gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.
In the such scheme, said source electrode and drain electrode are positioned at the active layer below, form end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.
In the such scheme, said active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.
A kind of preparation method with organic field effect tube structure of bottom grating structure comprises:
On dielectric substrate, prepare gate electrode;
At surface gate electrode deposition gate dielectric layer;
Embed the groove of source, drain electrode in the gate dielectric layer surface preparation;
Preparation source, drain electrode on gate dielectric layer; And
In the source of preparing, the sample surfaces of drain electrode deposition active layer, accomplish preparation of devices.
In the such scheme; Said gate electrode is metal gate electrode or organic gate electrode; Wherein, metal gate electrode adopts its corresponding glue pattern of carving of photoetching technique definition, comes plated metal through electron beam evaporation, sputter or thermal evaporation method again; Come transition diagram through the method for metal-stripping at last, thereby prepare metal gate electrode; Organic gate electrode then adopts inkjet technology to prepare.
In the such scheme, said gate dielectric layer is inorganic gate dielectric layer or organic gate dielectric layer, and wherein, inorganic gate dielectric layer deposits through low-pressure chemical vapor deposition, sputter or Atomic layer deposition method, and organic gate dielectric layer deposits through spin coating technique.
In the such scheme, saidly embedding the step of the groove of source, drain electrode in the gate dielectric layer surface preparation, is through photoetching method definition photoresist figure earlier, then through lithographic method with figure transfer to gate dielectric layer, form required groove.
In the such scheme; Said on gate dielectric layer the step of preparation source, drain electrode; Be to prepare depositing metal films on the gate dielectric layer that embeds groove through electron beam evaporation, sputter or thermal evaporation method; Metallic film unnecessary outside the groove is removed the preparation of completion source, drain electrode through the method for metal-stripping again; And organic source, drain electrode adopt inkjet technology to deposit and graphically, prepare the back and adopt organic solvent to remove photoresist.
In the such scheme, the said metallic film that is used to form source, drain electrode, the deep equality of its thickness and the groove that on gate dielectric layer, prepares is with the flush of the upper surface and the gate dielectric layer of assurance source, drain electrode.
In the such scheme, said in the source of preparing, the step of the sample surfaces of drain electrode deposition active layer, the active layer film forms through vacuum heat deposition, spin coating technique.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, utilizes the present invention,, make that the effective contact area between source leakage, electrode and the organic semiconductor thin-film increases greatly, thereby reduced contact resistance, improve the electric charge injection efficiency of device through using Embedded source, drain electrode.
2, utilize the present invention, the photoresist figure of the etching through shared groove and the preparation of source-drain electrode effectively reduces preparation technology's complexity and difficulty.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with accompanying drawing and examples of implementation, the present invention is done detailed description,
Fig. 1 (a) is the cutaway view with organic field effect tube structure of top gate structure provided by the invention;
Fig. 1 (b) is the cutaway view with organic field effect tube structure of bottom grating structure provided by the invention;
The process chart that Fig. 2-1 has the organic field effect tube structure of top gate structure to Fig. 2-9 for preparation provided by the invention;
The process chart that Fig. 3-1 has the organic field effect tube structure of bottom grating structure to Fig. 3-9 for preparation provided by the invention;
Wherein, dielectric substrate 101, source, drain electrode 102, active layer 103, gate medium 104 and gate electrode 105.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The invention provides a kind of organic field effect tube structure with top gate structure or bottom grating structure; This structure is characterised in that source, drain electrode are embedded in dielectric substrate or the gate dielectric layer; The flush of the upper surface of source, drain electrode and dielectric substrate or gate dielectric layer; And contact with active layer, form end contact organic field effect tube.This feature structure can be applied in two types of different device architectures, and one type is the top gate structure that gate electrode and gate medium are positioned at the active layer upper surface, and its generalized section is shown in Fig. 1 (a); Another kind of is that gate electrode and gate medium all are positioned at the bottom grating structure below the active layer, and its generalized section is shown in Fig. 1 (b).
Below specify the present invention through embodiment, but the present invention is not limited by these embodiment.
Embodiment 1
The profile of this embodiment is shown in Fig. 1 (a); This has the organic field effect tube structure of top gate structure; Comprise dielectric substrate, be embedded in this dielectric substrate and with the source electrode and the drain electrode of this dielectric substrate flush, be formed at active layer on this dielectric substrate, be formed at the gate dielectric layer on this active layer, and be formed at the gate electrode on this gate medium.
Wherein, dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.Source electrode and drain electrode are positioned at the active layer below, form end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.Active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.Gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.Gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.
In the present embodiment; Dielectric substrate is the long silicon chip that the 300nm silica is arranged in surface, the double-layer metal film that source, leak electricity very 5nm titanium and 50nm gold combine, and active layer is the pentacene thin film of 50nm; Gate medium is the aluminum oxide film of 50nm, and gate electrode is the platinum/titanium metal thin film of 50nm.
The preparation method of this embodiment is following:
Step (1) shown in Fig. 2-1, prepares the photoresist figure 202 of source-drain electrode groove at dielectric substrate 201 upper surfaces.Silicon chip after cleaning technology through thermal oxide growth in thermal oxidation furnace forms the thick silicon oxide film of one deck 300nm on its surface; Adopt gas phase process silicon oxide surface to be modified, improve the viscosity of silicon oxide surface and photoresist with HMDS (HMDS).At the positive photoresist (S9920) of modifying 2 microns of good sample surfaces spin coating one decks, adopt the exposure of ultraviolet photolithographic machine, to develop, photographic fixing forms the photoresist layer 202 with figure.
Step (2), shown in Fig. 2-2, through wet etching the figure transfer of photoresist to the silicon oxide substrate upper surface, the control etching time forms the dark groove of 55nm.
Step (3), shown in Fig. 2-3, the sample surfaces for preparing groove deposits the platinum/titanium metal thin film of 5nm earlier through electron beam evaporation, and then deposits the golden metallic film of 50nm, forms double-deck combination metallic film 203.
Step (4) shown in Fig. 2-4, is immersed in the sample that has deposited the titanium builtup film in the acetone, removes the metal on photoresist surface when dissolving photoresist, only stays the metallic film in groove, forms Embedded source-drain electrode.
Step (5) shown in Fig. 2-5, is passed through the thick phthalocyanine copper film of vacuum thermal evaporation process deposits 50nm as active layer 204 at the sample surfaces for preparing embedded source-drain electrode;
Step (6) shown in Fig. 2-6, deposits the thick aluminum oxide film of one deck 50nm as gate dielectric layer 205 on active layer 204 surfaces through technique for atomic layer deposition.
Step (7), shown in Fig. 2-7, the positive photoresist (S9920) 2 microns of gate dielectric layer surface spin coating one decks adopts the exposure of ultraviolet photolithographic machine, develops, and photographic fixing forms the photoresist layer 206 of gate electrode figure.
Step (8) shown in Fig. 2-8, prepares the platinum/titanium metal thin film 207 of the sample surfaces of gate electrode glue pattern through electron-beam evaporation 50nm.
Step (9); Shown in Fig. 2-9; Be immersed in the sample that has deposited titanium film 207 in the acetone, remove the metallic film on photoresist surface when dissolving photoresist, only stay metallic film on the gate dielectric layer surface; Form gate electrode, accomplish the transistorized preparation of the embedded source-drain electrode of top grid.
Embodiment 2
The profile of this embodiment is shown in Fig. 1 (b); This has the organic field effect tube structure of bottom grating structure; Comprise dielectric substrate, be formed at gate electrode on this dielectric substrate, be formed on this dielectric substrate and be coated on gate dielectric layer on this gate electrode, be embedded in this gate dielectric layer and with the source electrode and the drain electrode of this gate dielectric layer flush, and be formed at the active layer on this gate dielectric layer.
Wherein, dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.Gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.Gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.Source electrode and drain electrode are positioned at the active layer below, form end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.Active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.
In the present embodiment; Dielectric substrate is the long silicon chip that the 300nm silica is arranged in surface; The double-layer metal film that source, leak electricity very 5nm titanium and 50nm gold combine; Active layer is the pentacene thin film of 50nm, and gate medium is the crosslinked 300nm polyimide film of process, and gate electrode is the platinum/titanium metal thin film of 50nm.
The preparation method of this embodiment is following:
Step (1) shown in Fig. 3-1, prepares the photoresist figure 302 of gate electrode at dielectric substrate 301 upper surfaces.Silicon chip after cleaning technology through thermal oxide growth in thermal oxidation furnace forms the thick silicon oxide film of one deck 300nm on its surface; Adopt gas phase process silicon oxide surface to be modified, improve the viscosity of silicon oxide surface and photoresist with HMDS (HMDS).At the positive photoresist (S9920) of modifying 2 microns of good sample surfaces spin coating one decks, adopt the exposure of ultraviolet photolithographic machine, to develop, photographic fixing forms the photoresist layer 302 with figure.
Step (2) shown in Fig. 3-2, deposits the platinum/titanium metal thin film 303 of 50nm earlier through electron beam evaporation at the sample surfaces for preparing the gate electrode glue pattern.
Step (3) shown in Fig. 3-3, is immersed in the sample that has deposited platinum/titanium metal thin film 303 in the acetone, removes the metallic film on photoresist surface when dissolving photoresist, stays the metallic film in insulated substrate surface, forms gate electrode.
Step (4) shown in Fig. 3-4, prepares the thick polyimide film of one deck 200nm in the mode of the sample surfaces for preparing gate electrode through spin coating; Under the temperature of 250 degree, toasting sample two hours on the hot plate then, thereby making polyimide film crosslinked, formation can be resisted the thin polymer film 304 that organic solvent corrodes.
Step (5), shown in Fig. 3-5, the positive photoresist (S9920) 2 microns of gate dielectric layer surface spin coating one decks adopts the exposure of ultraviolet photolithographic machine, develops, and photographic fixing forms the photoresist layer 305 of source, drain electrode figure.
Step (6), shown in Fig. 3-6, the upper surface of the figure transfer of photoresist to polyimide film, the control etching time forms the dark groove of 55nm through dry etching.
Step (7), shown in Fig. 3-7, the sample surfaces for preparing groove deposits the platinum/titanium metal thin film of 5nm earlier through electron beam evaporation, and then deposits the golden metallic film of 50nm, forms double-deck combination metallic film 306.
Step (8); Shown in Fig. 3-8, be immersed in the sample that has deposited the double-deck combination of titanium metallic film 306 in the acetone, remove the surperficial metallic film of photoresist when dissolve photoresist; Stay metallic film, formation source, drain electrode on the gate dielectric layer surface.
Step (9) shown in Fig. 3-9, is passed through the thick pentacene thin film of vacuum thermal evaporation process deposits 50nm as active layer 307 at the sample surfaces for preparing embedded source-drain electrode, accomplishes the transistorized preparation of the embedded source-drain electrode of bottom gate.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (26)
1. the organic field effect tube structure with top gate structure is characterized in that, comprising:
Dielectric substrate;
Be embedded in this dielectric substrate and with the source electrode and the drain electrode of this dielectric substrate flush;
Be formed at the active layer on this dielectric substrate;
Be formed at the gate dielectric layer on this active layer; And
Be formed at the gate electrode on this gate medium.
2. the organic field effect tube structure with top gate structure according to claim 1 is characterized in that, said dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.
3. the organic field effect tube structure with top gate structure according to claim 1 is characterized in that, said source electrode and drain electrode are positioned at the active layer below, forms end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.
4. the organic field effect tube structure with top gate structure according to claim 1; It is characterized in that said active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.
5. the organic field effect tube structure with top gate structure according to claim 1; It is characterized in that said gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.
6. the organic field effect tube structure with top gate structure according to claim 1; It is characterized in that; Said gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.
7. the preparation method with organic field effect tube structure of top gate structure is characterized in that, comprising:
The groove of preparation embedding source, drain electrode on dielectric substrate;
Preparation source, drain electrode on dielectric substrate;
Deposit active layer preparing on the substrate of source-drain electrode;
On active layer, deposit gate dielectric layer; And
At gate dielectric layer surface preparation gate electrode, accomplish preparation of devices.
8. the preparation method with organic field effect tube structure of top gate structure according to claim 7; It is characterized in that; The said step that on dielectric substrate, prepares the groove of embedding source, drain electrode; Be through the first definition photoresist figure of photoetching method, then through lithographic method with this photoresist figure transfer on dielectric substrate, form required groove.
9. the preparation method with organic field effect tube structure of top gate structure according to claim 7; It is characterized in that; Said on dielectric substrate the step of preparation source, drain electrode; Be depositing metal films on the dielectric substrate of embedding source, drain electrode groove to be arranged in preparation, metallic film unnecessary outside the groove removed the preparation of completion source, drain electrode through the method for metal-stripping again through electron beam evaporation, sputter or thermal evaporation method; Organic source, drain electrode then adopt inkjet technology to deposit and graphically, adopt organic solvent to remove photoresist again after preparing source, drain electrode.
10. the preparation method with organic field effect tube structure of top gate structure according to claim 9; It is characterized in that; The said metallic film that is used to form source, drain electrode; The deep equality of its thickness and the groove that on dielectric substrate, prepares is with the upper surface and the dielectric substrate flush of assurance source, drain electrode.
11. the preparation method with organic field effect tube structure of top gate structure according to claim 7; It is characterized in that; Said in the step for preparing deposition active layer on the substrate of source-drain electrode, active layer forms through vacuum heat deposition, spin coating technique.
12. the preparation method with organic field effect tube structure of top gate structure according to claim 7; It is characterized in that; The said step that on active layer, deposits gate dielectric layer, gate dielectric layer is inorganic gate dielectric layer or organic gate dielectric layer, wherein; Inorganic gate dielectric layer deposits through low-pressure chemical vapor deposition, sputter or Atomic layer deposition method, and organic gate dielectric layer deposits through spin coating technique.
13. the preparation method with organic field effect tube structure of top gate structure according to claim 7 is characterized in that, said step at gate dielectric layer surface preparation gate electrode; Gate electrode is metal gate electrode or organic gate electrode; Wherein, metal gate electrode adopts its corresponding glue pattern of carving of photoetching technique definition, comes plated metal through electron beam evaporation, sputter or thermal evaporation method again; Come transition diagram through the method for metal-stripping at last, thereby prepare metal gate electrode; Organic gate electrode then adopts inkjet technology to prepare.
14. the organic field effect tube structure with bottom grating structure is characterized in that, comprising:
Dielectric substrate;
Be formed at the gate electrode on this dielectric substrate;
Be formed on this dielectric substrate and be coated on the gate dielectric layer on this gate electrode;
Be embedded in this gate dielectric layer and with the source electrode and the drain electrode of this gate dielectric layer flush; And
Be formed at the active layer on this gate dielectric layer.
15. the organic field effect tube structure with bottom grating structure according to claim 14 is characterized in that, said dielectric substrate is long silicon chip, glass or the plastic film that insulation film is arranged.
16. the organic field effect tube structure with bottom grating structure according to claim 14; It is characterized in that; Said gate electrode adopts metallic conduction material gold, platinum, silver, copper, nickel, aluminium, titanium, iron or chromium to be prepared from, and perhaps adopts conductive organic matter PEDOT:PSS to be prepared from.
17. the organic field effect tube structure with bottom grating structure according to claim 14; It is characterized in that said gate dielectric layer adopts silica, aluminium oxide, oxidation Kazakhstan, zirconia, tantalum oxide, silicon nitride, polyvinyl alcohol, polyimides, polyethylene pyrrolidone, polymethyl acrylate or Parylene to be prepared from.
18. the organic field effect tube structure with bottom grating structure according to claim 14 is characterized in that, said source electrode and drain electrode are positioned at the active layer below, form end contact structure with active layer; This source electrode and drain electrode adopt metal material gold, platinum, silver, copper, nickel, aluminium, titanium, iron and chromium to be prepared from, and perhaps adopt conductive organic matter PEDOT:PSS to be prepared from.
19. the organic field effect tube structure with bottom grating structure according to claim 14; It is characterized in that said active layer adopts pentacene, aphthacene, metal phthalocyanine, TiOPc, ranadylic phthalocyanine, perfluor phthalocyanine, P3HT, thiophene or red glimmering rare being prepared from of organic semiconductor.
20. the preparation method with organic field effect tube structure of bottom grating structure is characterized in that, comprising:
On dielectric substrate, prepare gate electrode;
At surface gate electrode deposition gate dielectric layer;
Embed the groove of source, drain electrode in the gate dielectric layer surface preparation;
Preparation source, drain electrode on gate dielectric layer; And
In the source of preparing, the sample surfaces of drain electrode deposition active layer, accomplish preparation of devices.
21. the preparation method with organic field effect tube structure of bottom grating structure according to claim 20; It is characterized in that said gate electrode is metal gate electrode or organic gate electrode, wherein; Metal gate electrode adopts its corresponding glue pattern of carving of photoetching technique definition; Come plated metal through electron beam evaporation, sputter or thermal evaporation method again, come transition diagram through the method for metal-stripping at last, thereby prepare metal gate electrode; Organic gate electrode then adopts inkjet technology to prepare.
22. the preparation method with organic field effect tube structure of bottom grating structure according to claim 20; It is characterized in that; Said gate dielectric layer is inorganic gate dielectric layer or organic gate dielectric layer; Wherein, inorganic gate dielectric layer deposits through low-pressure chemical vapor deposition, sputter or Atomic layer deposition method, and organic gate dielectric layer deposits through spin coating technique.
23. the preparation method with organic field effect tube structure of bottom grating structure according to claim 20; It is characterized in that; The said step that embeds the groove of source, drain electrode in the gate dielectric layer surface preparation; Be through the first definition photoresist figure of photoetching method, then through lithographic method with figure transfer to gate dielectric layer, form required groove.
24. the preparation method with organic field effect tube structure of bottom grating structure according to claim 20; It is characterized in that; Said on gate dielectric layer the step of preparation source, drain electrode; Be to prepare depositing metal films on the gate dielectric layer that embeds groove, metallic film unnecessary outside the groove removed the preparation of completion source, drain electrode through the method for metal-stripping again through electron beam evaporation, sputter or thermal evaporation method; And organic source, drain electrode adopt inkjet technology to deposit and graphically, prepare the back and adopt organic solvent to remove photoresist.
25. the preparation method with organic field effect tube structure of bottom grating structure according to claim 24; It is characterized in that; The said metallic film that is used to form source, drain electrode; The deep equality of its thickness and the groove that on gate dielectric layer, prepares is with the flush of the upper surface and the gate dielectric layer of assurance source, drain electrode.
26. the preparation method with organic field effect tube structure of bottom grating structure according to claim 20; It is characterized in that; Said in the source of preparing, the step of the sample surfaces of drain electrode deposition active layer, the active layer film forms through vacuum heat deposition, spin coating technique.
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Application publication date: 20120905 |