CN107958956A - Organic thin film transistor element and manufacturing method thereof - Google Patents
Organic thin film transistor element and manufacturing method thereof Download PDFInfo
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- CN107958956A CN107958956A CN201711160473.8A CN201711160473A CN107958956A CN 107958956 A CN107958956 A CN 107958956A CN 201711160473 A CN201711160473 A CN 201711160473A CN 107958956 A CN107958956 A CN 107958956A
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- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000004888 barrier function Effects 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 130
- 238000000034 method Methods 0.000 description 31
- 238000000151 deposition Methods 0.000 description 11
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- 238000002360 preparation method Methods 0.000 description 8
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- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
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- 230000008859 change Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
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- 229920003023 plastic Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- -1 polyethylene Terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- QIWRZADCJMZRLM-UHFFFAOYSA-N 1-ethoxycarbonylnaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(C(=O)OCC)=C(C(O)=O)C=CC2=C1 QIWRZADCJMZRLM-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphenyl group Chemical group C1=CC=CC2=CC3=CC=C4C=C5C=CC=CC5=CC4=C3C=C12 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Landscapes
- Thin Film Transistor (AREA)
Abstract
An organic thin film transistor element and a method of manufacturing the same, the organic thin film transistor element comprising: a substrate, a drain, a source, a barrier layer, an organic semiconductor layer, a gate dielectric layer and a gate. The source electrode is positioned on the substrate and is provided with a first vertical wall. The drain electrode is positioned on the substrate and is provided with second vertical walls which face the first vertical walls and are separated from each other. The barrier layer is positioned between the first vertical wall and the second vertical wall, and the width of the top surface of the barrier layer is substantially equal to the distance between the first vertical wall and the second vertical wall. And the organic semiconductor layer covers the source electrode, the drain electrode and the barrier layer. The gate dielectric layer is located on the organic semiconductor layer. The grid electrode is positioned on the grid dielectric layer and is electrically isolated from the organic semiconductor layer by the grid dielectric layer.
Description
Technical field
The invention relates to a kind of thin-film transistor element and preparation method thereof.In particular to a kind of organic film
Transistor unit and preparation method thereof.
Background technology
Thin-film transistor element has been widely deployed in field of liquid crystal at present, as display is towards more
Gently, thinner, deflection target development, the Organic Thin Film Transistors using organic material as the channel layer of field-effect transistor
(Organic Thin Film Transistor, OTFT), because with low technological temperature (<200 DEG C), low cost and be suitable for
The characteristics such as flexible substrate (for example, plastic base), are gradually taken seriously.
In general, Organic Thin Film Transistors can be mainly divided into contact (top-contact, TC) structure and under
Two kinds of contact (bottom-contact, BC) structure.The forming method of typical upper contact type structure, is first to carry out organic half
The deposition of conductor (Organic Semiconductor, OSC) layer, just carries out the deposition and pattern chemical industry of source/drain afterwards
Skill.Opposite, the forming method of lower contact type structure is then first to carry out the deposition and Patternized technique of source/drain, Zhi Houzai
In Deposit organic semiconductor layer on source/drain.Due to, it is quite sensitive to form the organic semiconducting materials of organic semiconductor layer,
Easily it is damaged in the deposition of source/drain and Patternized technique, causes component failure.Therefore, in order to maintain technique and
The stability of yield is more at present to make organic thin-film transistor device using lower contact type structure technique.
However, using lower contact type structure technique to make organic thin-film transistor device when, be deposited on source/drain
The organic semiconductor layer of side, can produce the height fall that height rises and falls so that have with the thickness change of source/drain pattern
There is the phenomenon of became uneven in machine semiconductor layer.Especially in lead angle (coner) place of source/drain pattern, organic semiconductor
The thickness of layer, can come thin, this will cause the channel of organic thin-film transistor device than the thickness above source/drain
Length (channel length) produces non-uniform problem, seriously affects the element efficiency of organic thin-film transistor device.
Therefore, it is in need that a kind of advanced organic thin-film transistor device and preparation method thereof is provided, to solve existing skill
Art problem encountered.
The content of the invention
One embodiment of this specification discloses a kind of organic thin-film transistor device, including：Base material, source electrode, barrier layer, have
Machine semiconductor layer, gate dielectric layer with grid.Source electrode is located on base material, has the first wall.Drain electrode has face on base material
To the first wall and the second wall for being isolated from each other.Barrier layer is between the first wall and the second wall, and barrier layer
Top surface width, is substantially equal to the distance between the first wall and the second wall.Organic semiconductor layer, be covered in source electrode, drain electrode and
On barrier layer.Gate dielectric layer is located on organic semiconductor layer.Grid is located on gate dielectric layer, and by gate dielectric layer and organic half
Conductor layer electrically isolates.
Another embodiment of this specification discloses a kind of production method of organic thin-film transistor device, including following steps
Suddenly：First, in forming source electrode and drain electrode on base material, make source electrode that there is the first wall, drain electrode is with face of the first wall and each other
Second wall of isolation.Then, barrier layer is formed between the first wall and the second wall, is substantially equal to the width of barrier layer
First wall and second vertical the distance between is kept away.Organic semiconductor layer is re-formed to be covered on source electrode, drain electrode and barrier layer.Afterwards
It is continuous, in forming gate dielectric layer on organic semiconductor layer；And in forming grid on gate dielectric layer, partly led with organic by gate dielectric layer
Body layer electrically isolates.
According to above-described embodiment, this specification is to provide a kind of organic thin-film transistor device and preparation method thereof.Its
Organic thin-film transistor device is made using lower contact type structure technique.Patterned source/drain is first formed on base material,
After forming barrier layer between source/drain, make barrier layer top width be substantially equal between source/drain away from
From.Organic semiconductor layer is re-formed to be covered on source electrode, drain electrode and barrier layer.And in forming gate dielectric layer on organic semiconductor layer
And grid.
By being filled in the barrier layer between source/drain pattern and be present in patterned source/drain electrode to relax (elimination)
Between high low head, make subsequent deposition that there is the uniform thickness of essence in the organic semiconductor layer in patterned source/drain electrode,
Use and the uniform channel length of organic thin-film transistor device is provided, it is ensured that the element efficiency of organic thin-film transistor device.
More preferably understand to have to the above-mentioned and other aspect of this specification, special embodiment below, and appended by cooperation
Schema describes in detail as follows.
Brief description of the drawings
Figure 1A to Fig. 1 E is the technique that organic thin-film transistor device is made according to depicted in an embodiment of this specification
Structural profile illustration；
Fig. 2 is that a kind of structure of organic thin-film transistor device according to depicted in another embodiment of this specification is cutd open
Face schematic diagram；
Fig. 3 is a kind of structural profile of organic thin-film transistor device according to depicted in the another embodiment of this specification
Schematic diagram.
Wherein, reference numeral is：
100、200、300：Organic thin-film transistor device
101：Base material
101a：Substrate surface
101b：The opposite side of substrate surface 1
102：Source electrode
102a：First wall
102b：The top surface of source electrode
103：Drain electrode
103a：Second wall
103b：The top surface of drain electrode
104、204、304：Barrier layer
104a：The top surface of barrier layer
105：Light-sensitive material
106：Light source
107、207、307：Organic semiconductor layer
107H、207H、307H：The thickness of organic semiconductor layer
108、208、308：Gate dielectric layer
109：Grid
207a、307a：The top of organic semiconductor layer
D：The distance between first wall and the second wall
B：The top surface width of barrier layer
H2、H3：Barrier layer top surface and source electrode and the offset for the top surface that drains
Embodiment
This specification is to provide a kind of organic thin-film transistor device and preparation method thereof, can improve with lower contact knot
The element efficiency of the organic thin-film transistor device of structure.In order to above-described embodiment to this specification and other purposes, feature and
Advantage can become apparent, and Organic Thin Film Transistors cited below particularly and preparation method thereof is used as preferred embodiment, and coordinates institute
Accompanying drawings elaborate.
But it must be noted that these specific case study on implementation and method, be not limited to the present invention.The present invention still may be used
It is carried out using other features, element, method and parameter.The it is proposed of preferred embodiment, only to illustrate the present invention skill
Art feature, is not limited to the claim of the present invention.Have usually intellectual in the technical field, can according to
The description of lower specification, in the scope for not departing from the present invention, makees the modification and change of equalization.In different embodiments and figure
Among formula, identical element, will be represented with identical component symbol.
Figure 1A to Fig. 1 E is refer to, Figure 1A to Fig. 1 E is to make organic film according to depicted in an embodiment of this specification
The process structure diagrammatic cross-section of transistor unit 100.The production method of organic thin-film transistor device 100, including following steps
Suddenly：First, there is provided a base material 101 (as depicted in Figure 1A).In some embodiments of this specification, substrate 101 can be one
The bendable flexible base plate of kind, such as plastic base.The material for forming flexible base plate can be poly- to naphthalenedicarboxylic acid ethyl ester
(poly-ethylene-26-naphthalate, PEN), ethylene terephthalate (polyethylene
Terephthalate, PET), polyether sulfone (poly-ether sulfones, PES) or polyimides (polyimide, PI).So
And substrate 101 is not limited to implement with flexible base plate., can also general glass base in some embodiments of this specification
Plate is implemented.
Afterwards, in forming source electrode 102 and drain electrode 103 on 101 surface 101a of base material, make source electrode 102 that there is the first wall
102a, drain electrode 103 have the second wall 103a for facing the first wall 102a and being isolated from each other (as depicted in Figure 1B).In this theory
In some embodiments of bright book, source electrode 102 and drain electrode 103 can be formed at by patterning on 101 surface 101a of base material
Conductor layer is formed.Wherein, metal, such as copper (Cu), golden (Au), platinum (Pt) or its conjunction can be included by forming the material of conductor layer
Gold.
In one embodiment, the formation of source electrode 102 and drain electrode 103 comprises the following steps.First, in conductor layer in base material
Physical vapour deposition (PVD) (Physical vapor deposition, PVD) technique is carried out on 101 surface 101a, is such as deposited
(evaporation) technique or or sputter (sputtering) technique, use to form conductor layer, wherein the conductor layer, citing
For, metal material can be included.Afterwards, the conductor layer of a part is removed with lithographic and etch process, with 101 surface of base material
The source electrode 102 being isolated from each other and drain electrode 103 are formed on 101a.Wherein, the of the first wall 102a of source electrode 102 and drain electrode 103
There is the distance D substantially between 3 μm to 10 μm between two wall 103a.
Then, barrier layer 104 is formed between source electrode 102 and the first wall 102a and the second wall 103a of drain electrode 103,
The top surface width B of barrier layer 104 is set to be substantially equal to the distance between the first wall 102a and the second wall 103a D.Barrier layer 104
Formation, comprise the following steps：First, it is photosensitive in one layer of coating on 103 and 101 surface 101a of base material of source electrode 102 and drain electrode
Material 105, and cover source electrode 101 and drain electrode 103.Afterwards, a light source is provided in the opposite side 101b of 101 surface 101a of base material
106, light is passed through 101 surface 101a of base material 101 and base material, and irradiate light-sensitive material 105 (as depicted in Fig. 1 C).Subsequently,
A part of light-sensitive material 105 positioned at source electrode 102 and the top of drain electrode 103 is removed, is at least retained positioned at source electrode 102 and drain electrode 103
Between a part of light-sensitive material 105, and using light-sensitive material 105 be left behind come part be used as barrier layer 104.
In some embodiments of this specification, light-sensitive material 105 can be a kind of minus photoresist
(negativephotoresist) (but being not limited thereto), is mask with patterned source electrode 102 and drain electrode 103, by light
Source 106 removes a part of light-sensitive material 105 not being exposed to be exposed with developing process (development).But it is worth
Obtain it is noted that the material and forming method of barrier layer 104 are not limited thereto.It is any can source electrode 102 and drain electrode 103
Between form the side of barrier layer 104 trimmed with source electrode 102 (the first wall 102a) and 103 (the second wall 103a) that drain
Method, all scope without departing from the present invention.
Subsequently, organic semiconductor layer 107 is formed, is covered on source electrode 102, drain electrode 103 and barrier layer 104.Said in this book
In some embodiments of bright book, the material of the composition organic semiconductor layer 107 of organic semiconductor layer 107 can include five phenyl ring
(pentacene) or derivatives thereof.The step of forming organic semiconductor layer 107 includes carrying out vapour deposition method, sputtering method or solution work
Skill.For example, in one embodiment, single evaporation or sputtering process can be used, in source electrode 102, drain electrode 103 and barrier layer 104
Top form the unipolar semiconductor layer that is made of pentaphene ring derivatives.In another embodiment, difference can also be used
Evaporation or sputtering process, evaporation or sputter N-type organic semiconducting materials, p-type organic semiconducting materials, N-type inorganic half respectively
Conductor material, p-type inorganic semiconductor material；Or using evaporation process, while it is organic that N-type organic semiconducting materials, p-type is deposited altogether
The organic semiconducting materials of semi-conducting material or evaporation tool dipole characteristic, and in source electrode 102, drain electrode 103 and barrier layer 104
Upper shape bipolar semiconductor layer.
Organic semiconductor layer 107 thickness essence between 300 angstroms () between 500 angstroms.In the present embodiment
In, due to top surface 102b, 103b and 104a three's essence copline of source electrode 102, drain electrode 103 and barrier layer 104.Therefore formed
Organic semiconductor layer 107 on source electrode 102 and top surface 102b, 103b and 104a of drain electrode 103 and barrier layer 104, its thickness
107H refers to be started at by top surface 102b, 103b and 104a of source electrode 102, drain electrode 103 and barrier layer 104, along the side of vertical range D
To the length of extension.
Afterwards, in formation gate dielectric layer 108 on organic semiconductor layer 107.Form the material of gate dielectric layer 108, including nothing
Machine insulating materials or organic insulation.Inorganic insulating material, including silica, silicon nitride or hafnium oxide (hafnium
Oxide, HfO2) etc..Organic insulation, including polyvinyl phenol (polyvinylphenol, PVP).Form gate dielectric layer
108 method, including carry out physical gas-phase deposition (such as vapour deposition method) or solution process.In one embodiment, can be initially formed
Including polyvinyl phenol, propylene glycol methyl ether acetate (propyleneglycol monomethylether acetate,
PGMEA) and melamine and altogether formaldehyde polymer (poly-melamine-co-formaldehyde, PMCF) high score
Sub- solution, then this Polymer Solution is coated on organic semiconductor layer 107 to and toasted the crosslinking for making polyvinyl phenol.
Subsequently, in forming grid 109 on gate dielectric layer 108, wherein grid 109 is partly led by gate dielectric layer 108 with organic
Body layer 107 electrically isolates.And protective layer (not illustrating) is formed, it is covered on dielectric layer 108 and grid 109 and completes as Fig. 1 E are painted
The organic thin-film transistor device 100 shown.The material for forming grid 109 can be transparent conductive oxide or metal.It is transparent to lead
Electroxidation thing include indium tin oxide (Indiumtin oxide, ITO) or indium-zinc oxide (indium zinc oxide,
IZO) etc..Metal includes gold, silver (Ag), aluminium (Al), copper, titanium (Ti), chromium (Cr) or tantalum (Ta) etc..In one embodiment, formed
The method of grid 109 includes carrying out physical gas-phase deposition (such as vapour deposition method), electrically conductive ink spray printing mode or other transfer skills
Art.
In the present embodiment, since top surface 102b of the source electrode 102 away from 101 surface 101a of base material, drain electrode 103 are away from base material
Top surface 104a three essence coplines of the top surface 103b and barrier layer 104 of 101 surface 101a away from 101 surface 101a of base material
(as depicted in Fig. 1 D and Fig. 1 E).It is, therefore, possible to provide a flat surface (top surface 102b, 103b and 104a), allows organic
Semiconductor layer 107 can be formed thereon, without there is a phenomenon where the height fall and became uneven that height rises and falls.And help
In the engineering nargin (process window) for improving subsequent technique, make organic thin-film transistor device 100 that there is uniform letter
Road length.In addition, in some embodiments of this specification, due to forming organic semiconductor layer 107, gate dielectric layer 108, grid
109 and the technological temperature of protective layer (not illustrating), 150 DEG C are essentially less than, it is far below the work for forming source electrode 102 and drain electrode 103
Skill temperature.Therefore, it can be ensured that will not be damaged with organic semiconductor layer 107 because of the high temperature of subsequent technique, it is ensured that organic thin
The element efficiency of film transistor element 100.
Fig. 2 is refer to, Fig. 2 is a kind of organic thin-film transistor device according to depicted in another embodiment of this specification
200 structural profile illustration.The structure of organic thin-film transistor device 200, the substantially organic film depicted with 1E figures
Transistor unit 100 is similar, and difference is only that the height of the barrier layer 204 in organic thin-film transistor device 200 is different.
In the present embodiment, top surface 204a of the barrier layer 204 away from 101 surface 101a of base material, higher than source electrode 102 away from 101 table of base material
The 103 top surface 103b away from 101 surface 101a of base material of top surface 102b and drain electrode of face 101a.Make the top surface 204a of barrier layer 204
Offset (step height) H2 is produced with source electrode 102 and the top surface 102b and 103b of drain electrode 103.And make follow-up, formation
Organic semiconductor layer 207 and grid on the top surface 102b and 103b of the top surface 204a of barrier layer 204, source electrode 102 and drain electrode 103
Pole dielectric layer 208, the ㄇ fonts section with top general planar respectively, since organic semiconductor layer 207 has levelability, i.e.,
The top surface 204a and source electrode 102 and the top surface 102b and 103b of drain electrode 103 for making barrier layer 204 produce an offset (step
Height) H2, and cause the top 207a of organic semiconductor layer 207 there may be a little fluctuating, but these height to rise and fall are still
Offset H2 can be less than.In other words the top 207a of organic semiconductor layer 207 is generally still flat.
In the present embodiment, it is organic since organic semiconductor layer 207 has the ㄇ fonts section of top general planar
The thickness 207H of semiconductor layer 207 refers to, and is started at by the top surface 204a of barrier layer 204, has been extended to along the direction of vertical range D
The length of the top 207a of machine semiconductor layer 207.
In the present embodiment, due to top surface 204a and the source electrode 102 of barrier layer 204 and the top surface 102b of drain electrode 103 and
Offset H2 between 103b, real value be less than organic semiconductor layer 207 thickness (organic semiconductor layer 207 thickness essence between
Between 300 angstroms to 500 angstroms).Therefore, even if offset H2 can make organic semiconductor layer 207 that the height fall that a little height rise and fall occur,
Also it is unlikely to the phenomenon for making organic semiconductor layer 207 produce became uneven.Or one stabilization of subsequent technique and flat can be provided
Artistic face, the channel length of organic thin-film transistor device 200 can also be made to keep uniform, reach provide engineering nargin and
Ensure the purpose of the element efficiency of organic thin-film transistor device 200.
Fig. 3 is refer to, Fig. 3 is a kind of organic thin-film transistor device according to depicted in the another embodiment of this specification
300 structural profile illustration.The structure of organic thin-film transistor device 300, the polycrystalline organic thin film depicted in substantially with Fig. 1 E
Body tube elements 100 are similar, and difference is only that the height of the barrier layer 304 in organic thin-film transistor device 300 is different.
In the present embodiment, top surface 304a of the barrier layer 304 away from 101 surface 101a of base material, less than source electrode 102 away from 101 surface of base material
The 103 top surface 103b away from 101 surface 101a of base material of top surface 102b and drain electrode of 101a.Make the top surface 304a of barrier layer 304 with
Source electrode 102 and the top surface 102b and 103b of drain electrode 103 produce an offset H3.And make the top for subsequently, being formed in barrier layer 304
Organic semiconductor layer 307 and gate dielectric 308 on the top surface 102b and 103b of face 304a, source electrode 102 and drain electrode 103, point
Not Ju You top flat T fonts section.Since organic semiconductor layer 307 has levelability, even if the top surface of barrier layer 304
304a produces offset (step height) H3 with source electrode 102 and the top surface 102b and 103b of drain electrode 103, and causes organic
The top 307a of semiconductor layer 307 is there may be a little fluctuating, but these height to rise and fall can still be less than offset H3.In other words have
The top 307a of machine semiconductor layer 307 is generally still flat.
In the present embodiment, it is organic partly to lead since organic semiconductor layer 307 has the T fonts section of top flat
The thickness 307H of body layer 307 refers to, and is started at by the top surface 304a of barrier layer 304, and organic half is extended to along the direction of vertical range D
The length of the top 307a of conductor layer 307.
In the present embodiment, due to top surface 304a and the source electrode 102 of barrier layer 304 and the top surface 102b of drain electrode 103 and
Offset H3 between 103b, real value are less than thickness 307H (the thickness essence of organic semiconductor layer 307 of organic semiconductor layer 307
Between 300 angstroms to 800 angstroms).Therefore, even if offset H3 can make organic semiconductor layer 307 that the height that a little height rise and fall occur
Drop, is also unlikely to the phenomenon for making organic semiconductor layer 307 produce became uneven.Or can provide one stabilization of subsequent technique and
Flat artistic face, can also make the channel length of organic thin-film transistor device 300 keep uniform, it is abundant to reach offer engineering
Spend and ensure organic thin-film transistor device 300 element efficiency purpose.
According to above-described embodiment, this specification is to provide a kind of organic thin-film transistor device and preparation method thereof.Its
Organic thin-film transistor device is made using lower contact type structure technique.Patterned source/drain is first formed on base material,
After forming barrier layer between source/drain, make barrier layer top width be substantially equal between source/drain away from
From.Organic semiconductor layer is re-formed to be covered on source electrode, drain electrode and barrier layer.And in forming gate dielectric layer on organic semiconductor layer
And grid.
By being filled in the barrier layer between source/drain pattern and be present in patterned source/drain electrode to relax (elimination)
Between high low head, make subsequent deposition that there is the uniform thickness of essence in the organic semiconductor layer in patterned source/drain electrode,
Use and the uniform channel length of organic thin-film transistor device is provided, it is ensured that the element efficiency of organic thin-film transistor device.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention, any technology neck
Related technical personnel in domain, without departing from the spirit and scope of the present invention, when can make a little change and retouch, therefore this
The protection domain of invention is when subject to the protection domain institute defender of appended claims.
Claims (10)
- A kind of 1. organic thin-film transistor device, it is characterised in that including：One base material；One source electrode, on the base material, has one first wall；One drain electrode, on the base material, has one second vertical wall surface to first wall, and be isolated from each other；One barrier layer, between first wall and second wall, and the barrier layer has a top surface width, is substantially equal to A distance between first wall and second wall；One organic semiconductor layer, is covered on the source electrode, the drain electrode and the barrier layer；One gate dielectric layer, on the organic semiconductor layer；AndOne grid, electrically isolates on the gate dielectric layer, and by the gate dielectric layer and the organic semiconductor layer.
- 2. organic thin-film transistor device as claimed in claim 1, it is characterised in that the source electrode, the drain electrode and the barrier layer There is a top surface, and three's essence copline respectively.
- 3. organic thin-film transistor device as claimed in claim 1, it is characterised in that the organic semiconductor layer has a thickness Degree, and the barrier layer and the source electrode and the drain electrode top surface offset of at least one are essentially less than the thickness.
- 4. organic thin-film transistor device as claimed in claim 3, it is characterised in that the barrier layer have higher than the source electrode and One top surface of the drain electrode.
- 5. organic thin-film transistor device as claimed in claim 3, it is characterised in that the barrier layer have less than the source electrode and One top surface of the drain electrode.
- 6. organic thin-film transistor device as claimed in claim 3, it is characterised in that thickness essence is between 300 angstroms to 800 Between angstrom.
- 7. organic thin-film transistor device as claimed in claim 3, it is characterised in that the barrier layer includes a light-sensitive material.
- A kind of 8. production method of organic thin-film transistor device, it is characterised in that including：In forming a source electrode and a drain electrode on a base material, make the source electrode that there is one first wall, which has one second wall In face of first wall, and it is isolated from each other；Form a barrier layer between first wall and second wall, make the barrier layer have a width be substantially equal to this One wall and this second it is vertical between a distance；An organic semiconductor layer is formed, is covered on the source electrode, the drain electrode and the barrier layer；In forming a gate dielectric layer on the organic semiconductor layer；AndIn forming a grid on the gate dielectric layer, and electrically isolated by the gate dielectric layer and the organic semiconductor layer.
- 9. the production method of organic thin-film transistor device as claimed in claim 8, it is characterised in that form the barrier layer Step, including：In being coated with a light-sensitive material on the base material, and cover the source electrode and the drain electrode；One light is provided, irradiates the light-sensitive material through the base material；AndRemove the part light-sensitive material above the source electrode and the drain electrode.
- 10. the production method of organic thin-film transistor device as claimed in claim 8, it is characterised in that it is organic partly to form this The step of conductor layer, the gate dielectric layer and grid, have essentially less than 150 DEG C of a temperature.
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Also Published As
| Publication number | Publication date |
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| CN107958956B (en) | 2020-10-30 |
| TW201916380A (en) | 2019-04-16 |
| TWI628803B (en) | 2018-07-01 |
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