CN101425563A - Preparation method of anisotropic organic field effect transistor - Google Patents
Preparation method of anisotropic organic field effect transistor Download PDFInfo
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- CN101425563A CN101425563A CNA2008102278622A CN200810227862A CN101425563A CN 101425563 A CN101425563 A CN 101425563A CN A2008102278622 A CNA2008102278622 A CN A2008102278622A CN 200810227862 A CN200810227862 A CN 200810227862A CN 101425563 A CN101425563 A CN 101425563A
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- 230000005669 field effect Effects 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 8
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
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Abstract
The invention relates to a preparation method of an anisotropic organic field effect transistor, which comprises the following steps: growing an insulating medium layer film on the conductive substrate to form an insulating layer substrate; assembling a layer of oriented monomolecular film on an insulating layer substrate by utilizing a Langmuir-Blodgett film forming mode to form an oriented layer; depositing and growing an organic semiconductor film on the patterned substrate to form an organic semiconductor layer; and depositing and growing metal source and drain electrodes on the organic semiconductor layer through the hollow mask plate. The method has the advantages of simple process, high artificial controllability and good repeatability, and the prepared device has high uniformity and high mobility.
Description
Technical field
The present invention relates to microelectronic, particularly a kind of preparation method of anisotropy organic field-effect tube.
Background technology
Along with deepening continuously and develop of information technology, electronic product has progressively entered each link of people's life, work; In daily life, people are increasing to the demand of low cost, low weight, flexibility, portable electronic product.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on semi-conducting materials such as organic polymer, organic molecules that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.Improve the mobility of organic field-effect tube, the inwardness of research organic semiconductor self is the target that pursue in this field always.In the process of research organic field-effect tube performance, it is found that new features of organic semi-conductor: the anisotropy of carrier mobility, the i.e. mobility of mobility when the orientation of carrier transport direction and thin-film material parallels when orthogonal.The method for preparing at present the anisotropy organic field-effect tube mainly is that the deposition growing organic semiconducting materials forms anisotropic film then by the coated last layer of wiping is as the organic material of inducer in a certain direction on dielectric layer.Yet this method controllability is low, and is repeatable poor, and film performance is inhomogeneous and introduce impurity easily.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of anisotropy organic field-effect tube, it is low to have overcome employing traditional preparation process method controllability, repeatable poor, film performance is inhomogeneous and introduce defective such as impurity easily, has simple, the artificial advantages such as controllability height, good reproducibility of technology.
The invention provides a kind of preparation method of anisotropy organic field-effect tube, comprising:
Step 1, the dielectric layer film of growing on conductive substrates form the insulating barrier substrate;
Step 2, on the insulating barrier substrate of completing steps 1, utilize the substrate of monomolecular film formation patterning of thin film-forming method assembling one deck orientationization of Lan Miuer-Bu Luoji film;
Step 3, the deposition growing organic semiconductor thin-film forms organic semiconductor layer on the substrate of the patterning of completing steps 2;
Step 4, the hollow mask plate deposition growing metal source and drain electrodes of on the organic semiconductor layer of completing steps 3, passing through.
Described step 1 is specially: form the insulating barrier substrate by the mode of thermal oxide growth or the chemical vapour deposition (CVD) dielectric layer film of growing on conductive substrates.
Described step 3 is specially: the mode by vacuum thermal evaporation on the oriented layer of completing steps 2 grows anisotropic organic semiconductor thin-film formation organic semiconductor layer.
Described step 4 is specially: the mode deposition growing metal source and drain electrodes that adopts evaporation of metal or magnetron sputtering on the organic semiconductor layer of completing steps 3 by hollow mask plate.
The material of described conductive substrates is low-resistance silicon or tin indium oxide, is used to form the grid of organic field-effect tube.
The present invention passes through the method for the film forming of LB film earlier and modifies substrate on the insulating barrier substrate that is formed on the conductive substrates, obtain the figure of orientation, the deposition growing organic semiconducting materials forms organic semiconductor layer then, obtain metal source and drain electrodes by mask process at last, in the process of vacuum evaporation owing to be subjected to inducing of substrate figure, organic semiconducting materials can be in a certain direction preferred growth optionally, thereby form anisotropic film, improve the mobility of device.Simple, the artificial controllability height of this method technology, good reproducibility, preparation-obtained device has higher inhomogeneity preparation high mobility.
Description of drawings
Fig. 1 is the flow chart of preparation method first embodiment of anisotropy organic field-effect tube of the present invention;
Fig. 2 is the flow chart of preparation method second embodiment of anisotropy organic field-effect tube of the present invention;
Fig. 3 is the schematic diagram that method step 11 shown in Figure 2 forms the insulating barrier substrate;
Fig. 4 is one of schematic diagram of method step shown in Figure 2 12 substrate that forms patternings;
Fig. 5 be method step shown in Figure 2 12 substrate that forms patternings schematic diagram two;
Fig. 6 be method step shown in Figure 2 12 substrate that forms patternings schematic diagram three;
Fig. 7 is the structural representation that method step 13 shown in Figure 2 forms organic semiconductor layer;
Fig. 8 is the schematic top plan view of Fig. 7;
Fig. 9 is the structural representation that method step 14 shown in Figure 2 forms metal source and drain electrodes;
Figure 10 is the schematic top plan view of Fig. 9;
Figure 11 is the flow chart of preparation method the 3rd embodiment of anisotropy organic field-effect tube of the present invention.
Description of reference numerals:
101-conductive substrates; 102-insulating barrier substrate; The substrate of 103-patterning;
104-organic semiconductor layer; 105-metal source and drain electrodes.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the flow chart of preparation method first embodiment of anisotropy organic field-effect tube of the present invention, and as shown in Figure 1, preparation method first embodiment of anisotropy organic field-effect tube of the present invention comprises:
Step 1, the dielectric layer film of growing on conductive substrates form the insulating barrier substrate;
Step 2, on the insulating barrier substrate of completing steps 1, utilize the substrate of monomolecular film formation patterning of thin film-forming method assembling one deck orientationization of Lan Miuer-Bu Luoji (Langmuir-Blodgett is hereinafter to be referred as LB) film;
Step 3, the deposition growing organic semiconductor thin-film forms organic semiconductor layer on the substrate of the patterning of completing steps 2;
Step 4, the hollow mask plate deposition growing metal source and drain electrodes of on the organic semiconductor layer of completing steps 3, passing through.
The above embodiment of the present invention is passed through the method for the film forming of LB film earlier and is modified substrate on the insulating barrier substrate that is formed on the conductive substrates, obtain the figure of orientation, the deposition growing organic semiconducting materials forms organic semiconductor layer then, obtain metal source and drain electrodes by mask process at last, simple, the artificial controllability height of this method technology, good reproducibility, preparation-obtained device has higher inhomogeneity preparation high mobility.
Fig. 2 is the flow chart of preparation method second embodiment of anisotropy organic field-effect tube of the present invention, Fig. 3 is the schematic diagram that method step 11 shown in Figure 2 forms the insulating barrier substrate, as shown in Figures 2 and 3, preparation method second embodiment of anisotropy organic field-effect tube of the present invention comprises:
As shown in Figure 3, form insulating barrier substrate 102 by the mode of thermal oxide growth or the chemical vapour deposition (CVD) dielectric layer film of on conductive substrates 101, growing.Above-mentioned conductive substrates 101 is used to form the grid of organic field-effect tube, and the material of this conductive substrates 101 is the low electric conducting material of resistivity, is preferably low-resistance silicon or tin indium oxide.
Fig. 4 is one of schematic diagram of method step shown in Figure 2 12 substrate that forms patternings, as shown in Figure 4, the mode that employing lifts, on insulating barrier substrate 102, utilize the monomolecular film formation oriented layer 103 of thin film-forming method assembling one deck orientationization of LB film, Fig. 5 be method step 12 formation patternings shown in Figure 2 substrate schematic diagram two; Fig. 6 be method step shown in Figure 2 12 substrate that forms patternings schematic diagram three, as shown in Figure 5 and Figure 6, the method assembling that has the figure of orientation to be based on the LB film on insulating barrier substrate 102 surfaces obtains, and its objective is that a monolayer is assembled on insulating barrier substrate 102 surfaces selectively.
Fig. 7 is the structural representation that method step 13 shown in Figure 2 forms organic semiconductor layer; Fig. 8 is the schematic top plan view of Fig. 7, as shown in Figure 7, induces down at the monomolecular film of dielectric layer figure orientationization, and organic semiconducting materials forms anisotropic film as shown in Figure 8 according to specific oriented growth.
Fig. 9 is the structural representation that method step 14 shown in Figure 2 forms metal source and drain electrodes; Figure 10 is the schematic top plan view of Fig. 9, as shown in Figure 9, by hollow mask plate in organic semiconductor thin-film surface deposition metal source and drain electrodes 105, with organic semiconductor layer 104, the substrate 103 of patterning and the low-resistance back grid that forms in conductive substrates 101 constitute organic field-effect tube together, as shown in figure 10.
The above embodiment of the present invention is passed through the method for the film forming of LB film earlier and is modified substrate on the insulating barrier substrate that is formed on the conductive substrates, obtain the figure of orientation, the deposition growing organic semiconducting materials forms organic semiconductor layer then, obtain metal source and drain electrodes by mask process at last, in the process of vacuum evaporation owing to be subjected to inducing of substrate figure, organic semiconducting materials can be in a certain direction preferred growth optionally, thereby form anisotropic film, improve the mobility of device.Simple, the artificial controllability height of this method technology, good reproducibility, preparation-obtained device has higher inhomogeneity preparation high mobility.
Figure 11 is the flow chart of preparation method the 3rd embodiment of anisotropy organic field-effect tube of the present invention, as shown in figure 11, on the basis of the foregoing description, because the structure of the anisotropy organic field-effect tube that forms is identical, with reference to Fig. 3-Figure 10, the preparation method of the anisotropy organic field-effect tube of present embodiment comprises:
Step 22, on the silica dioxide medium layer film substrate of completing steps 21, utilize the thin film-forming method of LB film to modify the arachidic acid molecular layer of one deck patterning;
The above embodiment of the present invention is modified substrate in the method that is formed on the film forming of passing through the LB film on the silica dioxide medium layer film substrate of surface of silicon earlier, obtain the arachidic acid molecular layer, deposit the pentacene organic film then, obtain metal source and drain electrodes by mask process at last.Simple, the artificial controllability height of this method technology, good reproducibility, preparation-obtained device has higher inhomogeneity preparation high mobility.
It should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not limit it, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that: it still can make amendment or be equal to replacement technical scheme of the present invention, and these modifications or be equal to replacement and also can not make amended technical scheme break away from the spirit and scope of technical solution of the present invention.
Claims (5)
1, a kind of preparation method of anisotropy organic field-effect tube is characterized in that, comprising:
Step 1, the dielectric layer film of growing on conductive substrates form the insulating barrier substrate;
Step 2, on the insulating barrier substrate of completing steps 1, utilize the substrate of monomolecular film formation patterning of thin film-forming method assembling one deck orientationization of Lan Miuer-Bu Luoji film;
Step 3, the deposition growing organic semiconductor thin-film forms organic semiconductor layer on the substrate of the patterning of completing steps 2;
Step 4, the hollow mask plate deposition growing metal source and drain electrodes of on the organic semiconductor layer of completing steps 3, passing through.
2, the preparation method of anisotropy organic field-effect tube according to claim 1, it is characterized in that described step 1 is specially: form the insulating barrier substrate by the mode of thermal oxide growth or the chemical vapour deposition (CVD) dielectric layer film of on conductive substrates, growing.
3, the preparation method of anisotropy organic field-effect tube according to claim 1, it is characterized in that described step 3 is specially: the mode by vacuum thermal evaporation on the substrate of the patterning of completing steps 2 grows anisotropic organic semiconductor thin-film and forms organic semiconductor layer.
4, the preparation method of anisotropy organic field-effect tube according to claim 1, it is characterized in that described step 4 is specially: the mode deposition growing metal source and drain electrodes that on the organic semiconductor layer of completing steps 3, adopts evaporation of metal or magnetron sputtering by hollow mask plate.
According to the preparation method of the described anisotropy organic field-effect tube of the arbitrary claim of claim 1-4, it is characterized in that 5, the material of described conductive substrates is low-resistance silicon or tin indium oxide, be used to form the grid of organic field-effect tube.
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| CNA2008102278622A CN101425563A (en) | 2008-12-01 | 2008-12-01 | Preparation method of anisotropic organic field effect transistor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016045255A1 (en) * | 2014-09-26 | 2016-03-31 | 京东方科技集团股份有限公司 | Organic thin film transistor, and preparation method, array substrate, and display device thereof |
| US9895866B2 (en) | 2014-09-26 | 2018-02-20 | Boe Technology Group Co., Ltd. | Anisotropic organic thin film and its manufacturing method |
| CN112490362A (en) * | 2020-11-11 | 2021-03-12 | 西安理工大学 | Preparation method of organic field effect transistor based on patterned substrate |
| CN112951999A (en) * | 2021-03-17 | 2021-06-11 | 中国科学院微电子研究所 | Preparation method of monomolecular layer organic semiconductor layer and organic field effect transistor |
-
2008
- 2008-12-01 CN CNA2008102278622A patent/CN101425563A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016045255A1 (en) * | 2014-09-26 | 2016-03-31 | 京东方科技集团股份有限公司 | Organic thin film transistor, and preparation method, array substrate, and display device thereof |
| US9887358B2 (en) | 2014-09-26 | 2018-02-06 | Boe Technology Group Co., Ltd. | Organic thin film transistor having aligned surfaces and method for preparing the same, array substrate and display device |
| US9895866B2 (en) | 2014-09-26 | 2018-02-20 | Boe Technology Group Co., Ltd. | Anisotropic organic thin film and its manufacturing method |
| CN112490362A (en) * | 2020-11-11 | 2021-03-12 | 西安理工大学 | Preparation method of organic field effect transistor based on patterned substrate |
| CN112951999A (en) * | 2021-03-17 | 2021-06-11 | 中国科学院微电子研究所 | Preparation method of monomolecular layer organic semiconductor layer and organic field effect transistor |
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Open date: 20090506 |