CN102683373A - Large-sensitization area CMOS image sensor pixel structure and generation method thereof - Google Patents
Large-sensitization area CMOS image sensor pixel structure and generation method thereof Download PDFInfo
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- CN102683373A CN102683373A CN2012101440118A CN201210144011A CN102683373A CN 102683373 A CN102683373 A CN 102683373A CN 2012101440118 A CN2012101440118 A CN 2012101440118A CN 201210144011 A CN201210144011 A CN 201210144011A CN 102683373 A CN102683373 A CN 102683373A
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Abstract
The invention relates to a solid complementary metal oxide semiconductor (CMOS) image sensor. In order to provide a large pixel structure with excellent property parameter and increase quantum efficiency of pixels to long-wavelength light to acquire a more actual colorful image, the technical scheme adopted by the invention is as follows: a large-sensitization area CMOS image sensor pixel structure and a generation method thereof are provided, a clamp diode PPD is as follows: an N region of the clamp diode and a P region of the clamp diode are arranged on a P type impurity substrate, a new P type impurity injection region is arranged between the N region of the clamp diode and the P region of the clamp diode, and the proportion of the area of an overlapping part of the new P type impurity injection region and a clamp diode sensitization region to the area of the sensitization region is 1:100-1:5; the shortest distance between the overlapping part and a TX grid of a transmission tube is more than 2 mu m; and the depth of concentration peak injection of the new P type impurity injection region is within an impurity depth distribution range of an N type impurity region. The invention is mainly applied to the design and the manufacture of the CMOS image sensor.
Description
Technical field
The present invention relates to solid-state cmos image sensor field, relate in particular to a kind of dot structure that improves large scale pixel quantum efficiency.
Background technology
In recent years, along with the particularly continuous development of cmos image sensor design and manufacturing process of CMOS integrated circuit fabrication process, cmos image sensor has replaced ccd image sensor gradually becomes main flow.Cmos image sensor is compared advantages such as the technology integrated level is higher, power consumption is lower.
Tradition 4T-PPD active pixel structure sectional drawing is as shown in Figure 1, comprising, 1 is the p type impurity substrate; 2 is the N district of clamp diode; 3 is the P district of clamp diode; 4 is FD (Floating Diffusion) memory node; The 5th, the drain electrode of RST pipe (reset transistor) meets supply voltage Vdd; The 6th, oxide layer; The 7th, the grid of TX pipe (transfer tube); The 8th, the grid of RST pipe (reset transistor).Its vertical view is as shown in Figure 2, and the 9th, the photosensitive region of clamp diode, it comprises clamp diode N district 2 and the clamp diode P district 3 between itself and oxide layer 6.
In big pixel was used, big its concrete manifestation of pixel was that the area of PD photosensitive region 9 shown in Figure 2 is big.Before the exposure of 4T-PPD active pixel; Electronics in the clamp diode N district 2 must exhaust fully, otherwise can introduce very big noise, and electronics exhausts this condition fully and under small-sized pixel, is easy to reach; But in big pixel; Because clamp diode N district 2 is excessive, causes its centre in reseting procedure, can't exhaust fully, this will introduce very big random noise.
The conventional method that clamp diode N district 2 can be exhausted in reseting procedure fully has and reduces the assorted 2 matter concentration in N district and reduce the distance of N district 2 bottom margins apart from oxide layer 6.Yet reduce N district 2 impurity concentrations, the trap capacity of pixel is reduced; Reduce N district 2 bottom margins apart from the oxide layer distance, can reduce the long wavelength light quantum efficiency.So there is the problem of a mutual restriction between the area in clamp diode N district 2, the injection degree of depth and the dosage.
Summary of the invention
The present invention is intended to overcome the deficiency of prior art; Provide a kind of performance parameter good big dot structure; Improve the quantum efficiency of pixel, so that collect real more coloured image, for achieving the above object to long wavelength light; The technical scheme that the present invention takes is; Big photosensitive area cmos image sensor dot structure is made up of transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD, and clamp diode PPD is provided with the N district of clamp diode, the P district of clamp diode for the p type impurity substrate; Between the P district of the N district of clamp diode, clamp diode, be provided with Novel P-type impurity injection region, Novel P-type impurity injection region and clamp diode photosensitive region overlapping part area and photosensitive area area ratio are between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
A kind of big photosensitive area cmos image sensor dot structure generation method; On the cmos image sensor dot structure of forming by transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD, carry out, comprise the following steps:
Make photolithography plate be positioned at clamp diode PPD photosensitive area top, photolithography plate is windowed to distinguish and is rectangle, and the long limit of rectangle and transfer tube TX grid and reset transistor RST grid vertical join line direction parallel, and the quantity in the district of windowing is more than or equal to one;
From the injection Novel P-type impurity injection region between the P district of the N district of clamp diode PPD, clamp diode PPD, district of windowing, make Novel P-type impurity injection region and photosensitive region overlapping part area and photosensitive area area ratio between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
The long length of side of district's rectangle of windowing is 2/5 of a photosensitive area, and minor face is long to be 1/8 of photosensitive area.
Novel P-type impurity injection region, dopant type are boron, and energy is 80 kiloelectron-volts, and implantation dosage is 4 * 10
12/ cm
2
Technical characterstic of the present invention and effect:
A p type impurity that is increased injects 12 under the prerequisite that does not change the photosensitive area area,
1. making clamp diode N district inject the degree of depth can deepen within the specific limits, thereby to substrate expansion depletion region scope, to improve the quantum efficiency for long wavelength light;
2. make clamp diode N district in reseting procedure, can exhaust fully, reduce picture noise;
3. clamp diode N district implantation concentration can be improved within the specific limits, thereby improve the trap capacity;
4. make clamp diode N district be lower than the concentration of TX transfer tube grid one side away from a side concentration of TX transfer tube grid 7; Thereby form one from TX transfer tube grid to internal electric field away from TX transfer tube grid one side, improve electric charge from the transmission speed of clamp diode to FD memory node 4.
Description of drawings
Fig. 1 .4T-PPD active pixel structural representation.
Fig. 2. the vertical view of traditional clamp diode and TX transfer tube grid 7, FD node 4, reset transistor.
Fig. 3. the p type impurity of increase injects the position of 12 used reticle.
Fig. 4. with the profile of A-A ' line shown in Figure 3.
Fig. 5. the profile of traditional clamp diode and TX transfer tube grid 7, FD node 4, reset transistor.
Embodiment
The technical scheme that the present invention takes is; Big photosensitive area cmos image sensor dot structure; Form by transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD; Clamp diode PPD is provided with the N district of clamp diode, the P district of clamp diode for the p type impurity substrate; Between the P district of the N district of clamp diode, clamp diode, be provided with Novel P-type impurity injection region, Novel P-type impurity injection region and clamp diode photosensitive region overlapping part area and photosensitive area area ratio are between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
A kind of big photosensitive area cmos image sensor dot structure generation method; On the cmos image sensor dot structure of forming by transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD, carry out, comprise the following steps:
Make photolithography plate be positioned at clamp diode PPD photosensitive area top, photolithography plate is windowed to distinguish and is rectangle, and the long limit of rectangle and transfer tube TX grid and reset transistor RST grid vertical join line direction parallel, and the quantity in the district of windowing is more than or equal to one;
From the injection Novel P-type impurity injection region between the P district of the N district of clamp diode PPD, clamp diode PPD, district of windowing, make Novel P-type impurity injection region and photosensitive region overlapping part area and photosensitive area area ratio between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
The long length of side of district's rectangle of windowing is 2/5 of a photosensitive area, and minor face is long to be 1/8 of photosensitive area.
Novel P-type impurity injection region, dopant type are boron, and energy is 80 kiloelectron-volts, and implantation dosage is 4 * 10
12/ cm
2
Below in conjunction with accompanying drawing and embodiment, further explain the present invention.
The photosensitive area area of 4T-PPD active pixel involved in the present invention is relatively large, it is characterized in that area is at 25um
2～500um
2Between.Tradition at clamp diode is injected on the basis for two kinds, comprising the injection 3 of p type impurity clamper layer and the injection 2 of N type impurity range, increases a p type impurity and injects 12.P type impurity injects and it is characterized in that reticle 10 relative positions are as shown in Figure 3, and 11 present positions of windowing are scopes that p type impurity injects.Reticle 10 is windowed and 11 it is characterized in that with clamp diode photosensitive region 9 the overlapping part being arranged, and connects the intersection point on window 11 borders and clamp diode photosensitive area 9 borders with straight line, connect on the outline line that straight line belongs to former photosensitive area 9; And overlapping part area and photosensitive area area ratio are between 1: 100～1: 5; Beeline between overlapping part and the TX transfer tube grid 7 is greater than 2um; And 11 the quantity of windowing that has above-mentioned characteristic is more than or equal to one.P type impurity injects 12 and it is characterized in that, the degree of depth that peak concentration is injected is within the impurity depth distribution scope of N type impurity range injection 2.
1. obtain structure as shown in Figure 5 through repeatedly injecting, be specially: clamp diode N district is injected, and impurity is phosphorus, and energy is 80keV, and dosage is 5 * 10
12/ cm
2Clamp diode P type clamper layer 3 injects, and impurity is BF
2, energy is 20keV, dosage is 1 * 10
13/ cm
2 FD memory node 4 leaks to inject with the NMOS pipe source of concrete technology with the N type impurity injection of reset transistor drain electrode 5 and is as the criterion.BF
2Be boron difluoride, keV representes kiloelectron-volt.
2. the position shown in 11 of windowing as shown in Figure 3; The center line of its center line and clamp diode photosensitive area 9 coincides with A-A '; And with the width about in the of 11 of windowing shown in Figure 3 account for the clamp diode photosensitive area about in the of 9 width 1/8, and window 11 overlap part with clamp diode photosensitive area 9 left and right sides width account for 2/5 of clamp diode photosensitive area 9 left and right sides width.
P type impurity injects 12, and dopant type is a boron, and energy is 80keV, and implantation dosage is 4 * 10
12/ cm
2
The present invention injects 12 through increase a p type impurity at the clamp diode photosensitive area; Can guarantee not reduce clamp diode photosensitive region 9 areas, not reduce the full trap capacity of pixel and can make under the prerequisite that clamp diode N district 2 exhausts in reseting procedure fully; Improve the quantum efficiency of pixel, obtain the good big dot structure of a kind of performance parameter with design to long wavelength light.
Claims (5)
1. one kind big photosensitive area cmos image sensor dot structure; Form by transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD; Clamp diode PPD is provided with the N district of clamp diode, the P district of clamp diode for the p type impurity substrate; It is characterized in that; Between the P district of the N district of clamp diode, clamp diode, be provided with Novel P-type impurity injection region, Novel P-type impurity injection region and clamp diode photosensitive region overlapping part area and photosensitive area area ratio are between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
2. one kind big photosensitive area cmos image sensor dot structure generation method; It is characterized in that; On the cmos image sensor dot structure of forming by transfer tube TX, reset transistor RST, source follower SF, selection pipe SEL and clamp diode PPD and memory node FD, carry out, comprise the following steps:
Make photolithography plate be positioned at clamp diode PPD photosensitive area top, photolithography plate is windowed to distinguish and is rectangle, and the long limit of rectangle and transfer tube TX grid and reset transistor RST grid vertical join line direction parallel, and the quantity in the district of windowing is more than or equal to one;
From the injection Novel P-type impurity injection region between the P district of the N district of clamp diode PPD, clamp diode PPD, district of windowing, make Novel P-type impurity injection region and photosensitive region overlapping part area and photosensitive area area ratio between 1: 100～1: 5; Beeline between overlapping part and the transfer tube TX grid is greater than 2um; The degree of depth that Novel P-type impurity injection region peak concentration is injected is within N type impurity range impurity depth distribution scope.
3. big photosensitive area cmos image sensor dot structure generation method as claimed in claim 2 is characterized in that, the long length of side of district's rectangle of windowing is 2/5 of a photosensitive area, and minor face is long to be 1/8 of photosensitive area.
4. big photosensitive area cmos image sensor dot structure generation method as claimed in claim 2 is characterized in that, Novel P-type impurity injection region, and dopant type is a boron, and energy is 80 kiloelectron-volts, and implantation dosage is 4 * 10
12/ cm
2
5. big photosensitive area cmos image sensor dot structure generation method as claimed in claim 2 is characterized in that, the quantity in the district of windowing made the district's parallel distribution in the photosensitive area scope of windowing greater than 1 o'clock.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706203A (en) * | 2017-11-10 | 2018-02-16 | 中电科技集团重庆声光电有限公司 | CCD of the big full-well capacity with antibloom structure |
| CN111276502A (en) * | 2020-02-19 | 2020-06-12 | 宁波飞芯电子科技有限公司 | Photoelectric conversion unit and image sensor |
| CN112259565A (en) * | 2020-08-26 | 2021-01-22 | 天津大学 | Charge rapid transfer method based on large-size pixels |
| CN112736105A (en) * | 2020-12-30 | 2021-04-30 | 长春长光辰芯光电技术有限公司 | CMOS image sensor and manufacturing method thereof |
| CN112816064A (en) * | 2019-11-15 | 2021-05-18 | 北京小米移动软件有限公司 | Optical sensor module and electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050105584A (en) * | 2004-04-30 | 2005-11-04 | 매그나칩 반도체 유한회사 | Cmos image sensor and fabricating method thereof |
| CN1819242A (en) * | 2004-12-29 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050105584A (en) * | 2004-04-30 | 2005-11-04 | 매그나칩 반도체 유한회사 | Cmos image sensor and fabricating method thereof |
| CN1819242A (en) * | 2004-12-29 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706203A (en) * | 2017-11-10 | 2018-02-16 | 中电科技集团重庆声光电有限公司 | CCD of the big full-well capacity with antibloom structure |
| CN107706203B (en) * | 2017-11-10 | 2020-08-14 | 中国电子科技集团公司第四十四研究所 | CCD with large full-well capacity and anti-corona structure |
| CN112816064A (en) * | 2019-11-15 | 2021-05-18 | 北京小米移动软件有限公司 | Optical sensor module and electronic device |
| CN111276502A (en) * | 2020-02-19 | 2020-06-12 | 宁波飞芯电子科技有限公司 | Photoelectric conversion unit and image sensor |
| CN111276502B (en) * | 2020-02-19 | 2023-04-25 | 宁波飞芯电子科技有限公司 | Photoelectric conversion unit and image sensor |
| CN112259565A (en) * | 2020-08-26 | 2021-01-22 | 天津大学 | Charge rapid transfer method based on large-size pixels |
| CN112736105A (en) * | 2020-12-30 | 2021-04-30 | 长春长光辰芯光电技术有限公司 | CMOS image sensor and manufacturing method thereof |
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