CN104134676A - Rapid charge transfer pixel structure based on radiation environment application - Google Patents
Rapid charge transfer pixel structure based on radiation environment application Download PDFInfo
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- CN104134676A CN104134676A CN201410353610.XA CN201410353610A CN104134676A CN 104134676 A CN104134676 A CN 104134676A CN 201410353610 A CN201410353610 A CN 201410353610A CN 104134676 A CN104134676 A CN 104134676A
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Abstract
The invention belongs to the field of a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor, in particular relates to a rapid charge transfer pixel structure based on radiation environment application. In order to solve the problems that the traditional structure cannot have an effect of radiation resistance and reinforcement on pixel and is not applicable for radiation environment, the rapid charge transfer pixel structure comprises that a closed circular charge transfer tube TG polysilicon gate is arranged on a P-type epitaxial layer, an N buried layer is arranged in the P-type epitaxial layer, a P+ clamping layer is arranged on the N buried layer, the P+ clamping layer, the N buried layer and the P-type epitaxial layer form a clamping diode (PPD), a circle of floating diffusion nodes FD are arranged outside the charge transfer tube TG polysilicon gate, a plurality of contact holes are arranged on the floating diffusion nodes FD and connected to a drain of a reset tube and a gate of a source follower, and STI (Shallow Trench Isolation) is arranged outside the floating diffusion nodes FD. With the adoption of the rapid charge transfer pixel structure disclosed by the invention, dark current generated by sensitive nodes with serious radiation at the edge of the charge transfer tube TG polysilicon gate and the boundary of the clamping diode PPD is inhibited, a diffusion transfer mode is formed, and charge transfer rate is improved.
Description
Technical field
The invention belongs to cmos image sensor field, be specifically related to a kind of rapid electric charge based on radiation environment application and shift dot structure.
Background technology
Cmos image sensor replaces charge coupled device (CCD) gradually with advantages such as its low-power consumption, low cost, high density of integration becomes main flow imageing sensor.Along with its extensive use in multiple radiation environments such as space exploration and medical imaging field, the radiation resistance of sensor pixel becomes the focus of concern, particularly the protection to total dose effect.
Comparatively general dot structure is four pipe active pixel structures at present, it is by a clamp diode PPD, floating empty diffusion node, transfer tube, reset transistor, source follower, row selects switch jointly to form, clamp diode PPD is the N buried regions injecting by P type epitaxial loayer, surperficial P+ clamper layer and P type epitaxial loayer composition.
Although N buried regions and Si surface have been isolated in the introducing of surperficial P+ layer, make four pipe active pixels possess certain capability of resistance to radiation, but still two serious radiosensitive points of existence: one, under radiation environment, the STI interface trap that is positioned at transfer tube edge is captured the positive charge because of radiation ionization, makes to form leak channel near the P type extension transoid on STI surface, causes transistor edge to produce leakage current, absorbed and form dark current, " beak " effect in similar LOCOS technique by floating empty diffusion region; They are two years old, exhaust because the accumulation of positive charge causes bottom P extension with the STI at overlapping place, PPD edge, and be combined with the depletion region that bottom P epitaxial loayer forms with N buried regions, again because radiation significantly increases the charge carrier complex centre surface density in this depletion region, under thermal excitation effect, the electron hole pair producing by complex centre has little time the compound interior highfield with regard to depleted district and drives the buried regions to N, there is the clean generation rate of charge carrier, thereby formation reverse current, the girth of this part dark current and PPD is closely related.Above-mentioned two radiosensitive points affect the image quality of cmos image sensor in radiation environment.
In the pixel course of work, transfer tube TG controls photo-generated carrier and is transferred to floating empty diffusion node FD by memory node PPD, then selects switch S EL output to become light signal voltage through source follower SF with row.If photo-generated carrier can not be transferred to floating empty diffusion node FD completely, rapidly, can cause part optical signals electric charge to remain in PPD, output while waiting for next frame operation, this will cause image to occur conditions of streaking.Visible, the transfer efficiency of photo-generated carrier is related to the quality of sensor image quality equally.
Therefore, how optimal design dot structure, makes it not only possess good capability of resistance to radiation but also can have high charge transfer effciency, thereby ensures the image quality of cmos image sensor in the time that radiation environment is applied, and is major issue urgently to be resolved hurrily.
At present for four pipe active pixel radiation tolerance designs, common method is to adopt PPD to surround floating empty diffusion node FD to form annular transfer tube TG structure, or on domain, pulls open distance formation NTA (the N to Active area) structure of PPD edge to STI.These two kinds of reinforcement measures only can suppress the radiation dark current component that one of aforementioned two sensitive nodes produce separately, only have simultaneously and adopt and just can play thorough consolidation effect, this can increase Pixel Design difficulty and technique manufacturing step, is also unfavorable for the improvement of charge transfer effciency characteristic.And for improving charge transfer effciency design, industry takes to optimize the method for electric charge transmission groove potential under TG grid, make photo-generated carrier in transfer process, can not run into potential well or potential barrier, the method cannot play radiation hardening effect to pixel, and is not suitable for radiation environment.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide a kind of rapid electric charge based on radiation environment application to shift dot structure, be optimized design for four pipe active pixels, two serious sensitive nodes of radiation in pixel are reinforced simultaneously, significantly suppress the dark current component that pixel inside produces because of radiation, and can realize the fast transfer of photogenerated charge, improve image sensor performance.
In order to achieve the above object, the present invention includes P type substrate, and be deposited on the P type epitaxial loayer on P type substrate, on P type epitaxial loayer, be provided with the electric charge transfer tube TG polysilicon gate of closed annular, in P type epitaxial loayer, be provided with N buried regions, on N buried regions, be provided with P+ clamper layer, P+ clamper layer, N buried regions and P type epitaxial loayer composition clamp diode PPD, one week floating empty diffusion node FD of electric charge transfer tube TG polysilicon gate outer setting, on floating empty diffusion node FD, some contact holes are set, and be connected with the drain electrode of reset transistor and the grid of source follower, floating empty diffusion node FD is outside is STI isolation, the source electrode of reset transistor connects power vd D, the source electrode of source follower connects power vd D, drain electrode connection row selects the source electrode of switch, row selects the drain electrode of switch to connect output OUT.
Described contact hole is connected by plain conductor with the grid of the drain electrode of reset transistor and source follower.
The breadth length ratio of described reset transistor be technological design rule defined the minimum breadth length ratio of transistor N doubly, N >=2.
The width of described floating empty diffusion node FD is the minimum range that the contact hole minimum widith of technological design rule defined adds the covering contact hole edge, active area of 2 times again.
The contact hole minimum widith of described technological design rule defined is 0.6 μ m, and the minimum range that active area covers contact hole edge is 0.5 μ m.
The upper contact hole arranging of described floating empty diffusion node FD is 16 altogether, is symmetrically distributed on the four edges of floating empty diffusion node FD.
The very square closed annular of described electric charge transfer tube TG polysilicon gate, grid length is 0.35 μ m, Pixel Dimensions is 10 μ m × 10 μ m.
Compared with prior art, the present invention is by being arranged to closed hoop structure by electric charge transfer tube TG polysilicon gate, make P+ clamper layer and floating empty diffusion node FD lay respectively at the inside and outside of ring-type electric charge transfer tube TG polysilicon gate, suppress the dark current that the serious sensitive nodes of these two radiation of electric charge transfer tube TG polysilicon gate edge and clamp diode PPD border produces, contact hole is set draws by floating empty diffusion node FD surrounding, be connected to reset transistor RST drain electrode and source follower SF grid, equivalence widened photo-generated carrier by clamp diode PPD the transfering channel to floating empty diffusion node FD, transfer mode is dispersed in formation, improve charge transfer effciency, the present invention does not transform photosensitive area, also without introducing additional photoetching and ion implantation technology step, only charge pass transistor structure in pixel is done to an optimal design, just can in improving capability of resistance to radiation, realize electric charge fast shifts, simplicity of design, efficiency is high.
Further, the breadth length ratio of reset transistor of the present invention be technological design rule defined the minimum breadth length ratio of transistor N doubly, N >=2, are so more conducive to drive FD load node.
Further, the width of floating empty diffusion node FD of the present invention is the minimum range that the contact hole minimum widith of technological design rule defined adds the covering contact hole edge, active area of 2 times again, to reduce floating empty diffusion node FD parasitic capacitance, increase light signal conversion gain, the signal swing that compensation brings because of the floating empty diffusion node FD structure of ring-type reduces.
Brief description of the drawings
Fig. 1 is existing four pipe active pixel structural representations;
Fig. 2 is existing transfer tube TG edge current leakage vertical view;
Fig. 3 is that existing PPD around extends and complex centre generation leakage current profile depletion region;
Fig. 4 is the four pipe active pixel structural representations that the present invention relates to;
Fig. 5 is the ring-type electric charge transfer tube TG domain schematic diagram the present invention relates to;
Fig. 6 is equivalent circuit diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.
Referring to Fig. 4 and Fig. 5, the present invention includes P type substrate e, and be deposited on the P type epitaxial loayer d on P type substrate e, on P type epitaxial loayer d, be provided with the electric charge transfer tube TG polysilicon gate of square closed annular, grid length is 0.35 μ m, Pixel Dimensions is 10 μ m × 10 μ m, in P type epitaxial loayer d, be provided with N buried regions b, on N buried regions b, be provided with P+ clamper layer a, P+ clamper layer a, N buried regions b and P type epitaxial loayer d composition clamp diode PPD, one week floating empty diffusion node FD of electric charge transfer tube TG polysilicon gate outer setting, on floating empty diffusion node FD, 16 contact hole q are set, and be connected with the drain electrode of reset transistor g and the grid of source follower h by plain conductor p, 16 contact hole q are symmetrically distributed on the four edges of floating empty diffusion node FD, floating empty diffusion node FD is outside is STI isolation, the source electrode of reset transistor g connects power vd D, the source electrode of source follower h connects power vd D, drain electrode connection row selects the source electrode of switch i, row selects the drain electrode of switch i to connect output OUT, the breadth length ratio of reset transistor g be technological design rule defined the minimum breadth length ratio of transistor N doubly, N >=2, the width of floating empty diffusion node FD is the minimum range that the contact hole minimum widith of technological design rule defined adds the covering contact hole edge, active area of 2 times again, the contact hole minimum widith of technological design rule defined is 0.6 μ m, and the minimum range that active area covers contact hole edge is 0.5 μ m.
The anti-integral dose radiation reinforced principle of dot structure the present invention relates to is as described below: the design of annular grid structure makes electric charge transfer tube TG polysilicon gate form enclosed structure, there is no physical edge, thereby eliminated edge current leakage mechanism, under radiation environment, this part dark current no longer produces; Clamp diode PPD is placed in to the inside of annular grid, clamp diode PPD and the floating outer field STI of empty diffusion node FD are isolated completely, the depletion region that N buried regions b and P type epitaxial loayer d form so can not extend to STI bottom, the non equilibrium carrier that complex centre, STI interface produces will be very soon by compound, cannot form dark current.
The dot structure rapid electric charge principle of transfer the present invention relates to is as described below: floating ring-type empty diffusion node FD surrounding is arranged to multiple contact hole q and draw, and connect with underlying metal wire p, electric charge transfer tube TG polysilicon gate grid width is significantly increased, and cover whole clamp diode PPD edge, photo-generated carrier can shift to different directions simultaneously, and non-traditional structure can only be toward same direction, especially for large scale pixel, shorten transfer path, make electric charge can be more completely, shift rapidly, avoid occurring smear phenomenon.
Referring to Fig. 5, the present invention provides a kind of typical embodiment, based on domestic certain cmos image sensor special process, electric charge transfer tube TG polysilicon gate is designed to square closed hoop, grid length is 0.35 μ m, and Pixel Dimensions is 10 μ m × 10 μ m, and the electric charge transfer tube TG polysilicon gate of square closed annular forms annular grid o, P+ clamper layer a, the N buried regions b of clamp diode PPD and P type epitaxial loayer d are positioned at the inside of annular grid o, and floating empty diffusion node FD is positioned at the outside of ring-shaped gate o.In the region of P+ clamper layer a, N buried regions b and P type epitaxial loayer d, draw in contactless hole, retains photosensitive area shape.Each symmetrical 4 the contact hole q in each limit of the floating empty diffusion node FD of square closed hoop,, are interconnected and are connected to the drain electrode of reset transistor RST and the grid of source follower SF by first layer metal wire p by totally 16.The contact hole minimum widith of described process stipulation is 0.6 μ m, and the minimum range that active area covers contact hole edge is 0.5 μ m, and the width on every limit of floating empty diffusion node FD is 1.6 μ m.Reset transistor RST grid width is designed to 4 times of minimum grid width.
In radiation environment; for example, when space is taken; this four pipes active pixel is owing to lacking atmospheric protection; can be subject to proton, neutron and gamma-ray radiation effects that the sun or depths, universe produce; in STI and other dielectric layers, ionize out electron hole pair, the hole that wherein mobility is lower is captured by the trap in dielectric layer.Because the electric charge transfer tube TG polysilicon gate design of the square closed hoop of this pixel makes transistor there is no physical edge, the hole of therefore being captured by trap can't have influence on electric charge transfer tube TG polysilicon gate leakage current characteristic, has eliminated the dark current that this radiosensitive node produces.In addition, the clamp diode PPD of this pixel is positioned at electric charge transfer tube TG polysilicon gate inside, realized and the isolation completely of outside STI, STI bottom cannot be touched in depletion region, has stoped charge carrier that complex centre, high density interface produces to be pulled to N buried regions and to produce the process of dark current by highfield.Thereby make this pixel reach radiation hardening effect from two aspects simultaneously.
In the time that this pixel is in running order, first by the reset transistor of 4 times of width, floating empty diffusion node FD is resetted, be connected to source follower SF and go and select switch S EL output resetting voltage through first layer metal wire p, afterwards to the pixel integration that exposes, photon in clamp diode excitation electron hole to producing a large amount of photo-generated carriers, by being biased to 3.3V, square closed hoop grid o opens transfering channel, photo-generated carrier is transferred to ring-type FD to different directions simultaneously, and 16 contact holes that are placed in FD take away, be output as signal voltage through SF and SEL.
Referring to Fig. 6, for the equivalent circuit diagram of this pixel, compared with conventional pixel structure, this pixel has at least increased the transfering channel width of 4 times, charge transfer time also foreshortens to 1/4th of conventional pixel, realized fast, electric charge shifts completely, avoids streaking to occur, and has improved the frame frequency of imageing sensor.
Claims (7)
1. the rapid electric charge based on radiation environment application shifts dot structure, it is characterized in that: comprise P type substrate (e), and be deposited on the P type epitaxial loayer (d) on P type substrate (e), on P type epitaxial loayer (d), be provided with the electric charge transfer tube TG polysilicon gate (f) of closed annular, in P type epitaxial loayer (d), be provided with N buried regions (b), on N buried regions (b), be provided with P+ clamper layer (a), P+ clamper layer (a), N buried regions (b) and P type epitaxial loayer (d) composition clamp diode PPD, one week floating empty diffusion node FD (c) of electric charge transfer tube TG polysilicon gate (f) outer setting, on floating empty diffusion node FD (c), some contact holes (q) are set, and connect the drain electrode of reset transistor (g) and the grid of source follower (h), floating empty diffusion node FD (c) is outside is STI isolation, the source electrode of reset transistor (g) connects power vd D, the source electrode of source follower (h) connects power vd D, drain electrode connection row selects the source electrode of switch (i), row selects the drain electrode of switch (i) to connect output OUT.
2. a kind of rapid electric charge based on radiation environment application according to claim 1 shifts dot structure, it is characterized in that: described contact hole (q) is connected by plain conductor (p) with the grid of the drain electrode of reset transistor (g) and source follower (h).
3. a kind of rapid electric charge based on radiation environment application according to claim 1 shifts dot structure, it is characterized in that: the breadth length ratio of described reset transistor (g) be technological design rule defined the minimum breadth length ratio of transistor N doubly, N >=2.
4. a kind of rapid electric charge based on radiation environment application according to claim 1 shifts dot structure, it is characterized in that: the width of described floating empty diffusion node FD (c) is the minimum range that the contact hole minimum widith of technological design rule defined adds the covering contact hole edge, active area of 2 times again.
5. a kind of rapid electric charge based on radiation environment application according to claim 4 shifts dot structure, it is characterized in that: the contact hole minimum widith of described technological design rule defined is 0.6 μ m, and the minimum range that active area covers contact hole edge is 0.5 μ m.
6. a kind of rapid electric charge based on radiation environment application according to claim 1 shifts dot structure, it is characterized in that: the upper contact hole (q) arranging of described floating empty diffusion node FD (c) is 16 altogether, is symmetrically distributed on the four edges of floating empty diffusion node FD (c).
7. a kind of rapid electric charge based on radiation environment application according to claim 1 shifts dot structure, it is characterized in that: described electric charge transfer tube TG polysilicon gate (f) is square closed annular, grid length is 0.35 μ m, and Pixel Dimensions is 10 μ m × 10 μ m.
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| CN104934475A (en) * | 2015-03-12 | 2015-09-23 | 西安电子科技大学 | Gate-all-around anti-irradiation MOS field effect transistor based on 65 nm technology |
| CN105572486A (en) * | 2016-01-29 | 2016-05-11 | 西北核技术研究所 | Charge transfer efficiency test method of post-neutron irradiation charge coupled device |
| CN111180473A (en) * | 2018-11-09 | 2020-05-19 | 天津大学青岛海洋技术研究院 | CMOS image sensor pixel structure with high charge transfer efficiency |
| WO2023213500A1 (en) * | 2022-05-05 | 2023-11-09 | Asml Netherlands B.V. | Radiation tolerant detector architecture for charged particle detection |
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