CN103855178B - Imageing sensor - Google Patents
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- CN103855178B CN103855178B CN201410087818.1A CN201410087818A CN103855178B CN 103855178 B CN103855178 B CN 103855178B CN 201410087818 A CN201410087818 A CN 201410087818A CN 103855178 B CN103855178 B CN 103855178B
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Abstract
The present invention relates to a kind of imageing sensor, comprising: photodiode, it by forming the second conductivity type regions in the first conductive type semiconductor substrate, thus forming photodiode, wherein, described second conductivity type regions is as photo-generated carrier collecting region；First conduction type sealing coat, it is formed at the inside of described Semiconductor substrate, is positioned at the inside of top the first conductive type semiconductor substrate of described photodiode area, contacts the sidepiece being positioned at the first conduction type sealing coat；First electrode portion, it is formed at the surface of described Semiconductor substrate, and is contacted with described first heavily doped region；Second electrode portion, it covers the subregion being formed on described first conduction type sealing coat；The area of grid of transfer tube, is formed at the upper surface of described Semiconductor substrate；Floating diffusion regions, it has the second conduction type heavy doping, and it is contacted with described area of grid and is formed at inside described Semiconductor substrate.
Description
Technical field
The present invention relates to the field of semiconductor device, be prevented from, more particularly, to a kind of, the imageing sensor that dark current produces.
Background technology
Imageing sensor is the important component part constituting digital camera, is a kind of equipment that optical imagery converts to electrical signal, and it is widely used in digital camera, mobile terminal, portable electron device and other electro-optical devices.Imageing sensor can be divided into the big class of CCD (ChargeCoupledDevice, charge coupled cell) and CMOS (ComplementaryMetalSemiconductor, CMOS complementary metal-oxide-semiconductor element) imageing sensor two.
Ccd image sensor, except large-scale application is except digital camera, is also widely used for video camera, scanner and industrial circle etc..And cmos image sensor is due to advantages such as its Highgrade integration, low-power consumption and local pixel readings immediately able to programme, it is applicable to the fields such as digital camera, PC video camera, mobile communication product.
Ccd image sensor and cmos image sensor are all adopt photodiode (PhotodiodeorPhotodetector) to collect incident illumination, and are converted into the electric charge that can carry out image procossing.But adopt the imageing sensor of photodiode, it is likely to when there is no incident illumination still to produce less desirable output electric current, this less desirable output electric current is known as " dark current ", dark current is without ambient light photograph when, the electric current that photodiode PN junction is produced by the thermal excitation of carrier, the diffusion of the electric charge collected in its main photodiode produces or defect and harmful impurity of device surface and inside cause.Dark current from photodiode occurs possibly as the noise in processed image, thus lowering image quality, and excessive dark current may result in image deterioration.
Therefore, in the manufacture of imageing sensor, it is important for being minimised by the dark current in photodiode.In order to reduce dark current; would generally at the substrate surface dopant ion of formation photodiode to form pinning (pinning) layer; this pinning layer generally and substrate contact so that it has same potential; when photodiode is completely depleted; the electromotive force of photodiode is pinned at steady state value; and the defect nailed layer on surface surrounds, thus reducing dark current.But, owing to the pinning layer of the photodiode in conventional image sensor has unstable current potential, it is impossible to realize stable pinning, the noise charge that the defect on surface produces is due to diffusion, and still some can flow into formation dark current in photodiode.Accordingly, it is desirable to provide a kind of imageing sensor that can effectively prevent dark current from producing.
Additionally, photo-generated carrier is captured by the defect on surface and the process that discharges can cause the change of surface potential, thus producing noise.Accordingly, it is desirable to provide a kind of image sensor architecture that can effectively prevent the impact of defect, reduction dark current.
The information being disclosed in this background of invention technology segment is merely intended to deepen the understanding of the general background technology to the present invention, and is not construed as admitting or imply in any form that this information structure is for prior art known in those skilled in the art.
Summary of the invention
In order to solve the problems referred to above, it is an object of the invention to provide a kind of imageing sensor that can effectively prevent dark current from producing.
To achieve these goals, the present invention provides a kind of imageing sensor, and this imageing sensor includes:
Photodiode, it by forming the second conductivity type regions in the first conductive type semiconductor substrate, thus forming photodiode, wherein, described second conductivity type regions is as photo-generated carrier collecting region；
First conduction type sealing coat, it is formed at the inside of described first conductive type semiconductor substrate, is positioned at the top of photodiode area；
First heavily doped region, it has the second conduction type, is formed at the inside of described first conductive type semiconductor substrate, is contacted with the sidepiece of the first conduction type sealing coat；
First electrode portion, it is formed at the surface of described first conductive type semiconductor substrate, and is contacted with described first heavily doped region；
Second electrode portion, it covers the subregion being formed on described first conduction type sealing coat；
The area of grid of transfer tube, is formed at the upper surface of described first conductive type semiconductor substrate；
Floating diffusion regions, it has the second conduction type heavy doping, and it is contacted with described area of grid and is formed at described first conductive type semiconductor substrate interior；
There is provided the first voltage in described first electrode portion, make generation electric potential difference between the first heavily doped region and the first conduction type sealing coat being connected electrically, the carrier making the second conduction type produced due to the defect of semiconductor substrate surface is derived through the first electrode, it is prevented that the generation of dark current.
Preferably, described first conduction type is P type, second conduction type is N-type, the photo-generated carrier collected is electronics, described first voltage is positive voltage, the sealing coat causing P type is high potential in the part near Semiconductor substrate upper surface, and the sealing coat of P type is low potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of N-type is high potential；The noise electronics that semiconductor substrate surface defect produces is derived by the high voltage in the first electrode portion, and then prevents the generation of dark current.
Preferably, described first conduction type is N-type, second conduction type is P type, the photo-generated carrier collected is hole, described first voltage is negative voltage, the sealing coat causing N-type is low potential in the part near Semiconductor substrate upper surface, and the sealing coat of N-type is high potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of P type is low potential；The noise hole that semiconductor substrate surface defect produces is derived by the low-voltage in the first electrode portion, it is prevented that the generation of dark current.
Preferably, it is provided that the second voltage, in described second electrode portion, forms depletion layer area, the effective electromotive force changing the first conduction type sealing coat upper surface in described first conduction type sealing coat close to the region in described second electrode portion.
Preferably, it is provided that the second voltage, in described second electrode portion, forms transoid doped region, the effective electromotive force changing the first conduction type sealing coat upper surface at described first conduction type sealing coat close to the region in described second electrode portion.
Preferably, described second electrode portion is polysilicon material or metal material.
Preferably, described imageing sensor also includes: be formed at the shallow trench isolation region that described imageing sensor is peripheral.
Preferably, described first conductive type semiconductor substrate includes the first conduction type substrate with extension in described suprabasil first conductive type epitaxial layer.
Preferably, described first electrode portion adopts metal conducting electrodes.
The invention has the beneficial effects as follows: the present invention by forming one first electrode portion and it being applied suitable voltage on the surface of Semiconductor substrate, and form the second electrode portion by the subregion being formed on described first conduction type sealing coat in covering, described first electrode portion and the second electrode portion are applied the first voltage and the second voltage respectively simultaneously, generation electric potential difference between the first heavily doped region and the first conduction type sealing coat electrically connected with this first electrode portion is made by the first voltage of described applying, and the electromotive force of the first conduction type sealing coat upper surface is effectively changed by the second voltage of described applying, thus causing carrier to pass through the first electrode portion and the derivation of the second electrode portion defect and the harmful impurity due to semiconductor device surface, thus reaching the purpose preventing undercurrent from producing.
Accompanying drawing explanation
By Figure of description and subsequently together with Figure of description for the detailed description of the invention of some principle of the present invention is described, further feature and advantage that the present invention has will be clear from or more specifically be illustrated.
Fig. 1 is the profile of the pixel of the imageing sensor according to the first embodiment of the present invention.
Fig. 2 is the profile of the pixel of imageing sensor according to the second embodiment of the present invention.
It is to be appreciated that Figure of description shows the concrete structure of the present invention with being not necessarily to scale, and for illustrating that the n-lustrative feature of some principle of the present invention also can take the technique of painting slightly simplified in Figure of description.The specific design feature of invention disclosed herein includes such as concrete size, direction, position and profile and will partly be determined by the environment specifically applied and to use.
Detailed description of the invention
Elaborate a lot of detail in the following description so that fully understanding the present invention.But the present invention can implement being much different from alternate manner described here, and those skilled in the art can do similar popularization when without prejudice to intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
The present invention provides a kind of imageing sensor, this imageing sensor by forming the first electrode portion and the second electrode portion at the first conductive type semiconductor substrate surface, and respectively it is applied the first suitable voltage, cause carrier to derive defect and the harmful impurity due to semiconductor device surface thereby through the first electrode portion and the second electrode portion.
Described imageing sensor includes: photodiode, the first conduction type sealing coat, the first heavily doped region, the area of grid of transfer tube, floating diffusion regions, the first electrode portion and the second electrode portion.Described photodiode forms the second conductivity type regions by the first conductive type semiconductor substrate by doping process, thus forming photodiode, wherein, described second conductivity type regions is as photo-generated carrier collecting region；In the present embodiment, described first conductive type semiconductor substrate includes the first conduction type substrate with extension in described suprabasil first conductive type epitaxial layer；Certainly, it is possible to adopting the epitaxial layer forming multilamellar in the second conduction type substrate, the epitaxial layer of top is the first conductive type epitaxial layer the most finally, and in the first conductive type epitaxial layer, form the second conductivity type regions, and then form photodiode.
Forming the first conduction type sealing coat by doping process, described first conduction type sealing coat is formed at the inside of described first conductive type semiconductor substrate and is positioned at the top of photodiode area；Wherein, described first conduction type sealing coat is also referred to as pinning layer, and this first conduction type sealing coat constitutes pinned diode with the second conductivity type regions under it.
Forming the first heavily doped region by doping process, it has the second conduction type, and described first heavily doped region is formed at the inside of described first conductive type semiconductor substrate, is contacted with the sidepiece of the first conduction type sealing coat；Wherein said first heavily doped region directly adopts ion implanting to adulterate.
Formed the area of grid of transfer tube by patterning process, it is formed at the upper surface of described first conductive type semiconductor substrate；Wherein area of grid can include gate dielectric layer and the gate electrode being positioned on gate dielectric layer, gate electrode can include conductive material such as, metal is (such as, tantalum, titanium, molybdenum, tungsten, platinum, aluminum etc.) metal silicide is (such as, titanium silicide, cobalt silicide, nickle silicide etc.), metal nitride (such as, titanium nitride, tantalum nitride etc.), DOPOS doped polycrystalline silicon, other conductive material or their combination.Chemical vapour deposition (CVD), physical vapour deposition (PVD) can be adopted in various embodiments or formed by polysilicon.
Floating diffusion regions is formed by doping process, it has the second conduction type heavy doping, described floating diffusion regions is contacted with described area of grid and is formed at described first conductive type semiconductor substrate interior, the area of grid of described transfer tube is for being transferred to floating diffusion regions by the photo-electric charge in photodiode, and described floating diffusion regions is as pixel output area；Wherein photodiode, floating diffusion region is respectively as the source region of imageing sensor transfer tube, drain region.
Forming the first electrode portion by patterning process, it is formed at the surface of described first conductive type semiconductor substrate, and is contacted with described first heavily doped region.
Second electrode portion, it covers the subregion being formed on described first conduction type sealing coat, is specifically formed on the dielectric layer of substrate surface, is positioned at the subregion on the first conduction type sealing coat, wherein, described second electrode portion is polysilicon material or metal material.
There is provided the first voltage in described first electrode portion, make generation electric potential difference between the first heavily doped region and the first conduction type sealing coat being connected electrically, so that the carrier of the second conduction type produced due to the defect of semiconductor substrate surface is derived through the first electrode portion, it is prevented that the generation of dark current.
There is provided the second voltage in described second electrode portion, can effectively change the electromotive force of the first conduction type sealing coat upper surface, so that the carrier of the second conduction type produced due to the defect of semiconductor substrate surface is derived through the second electrode portion, it is prevented that the generation of dark current.
In certain embodiments, described first conduction type is P type, second conduction type is N-type, described second conductivity type regions is N-type region territory and the photo-generated carrier collected is electronics, described first voltage is positive voltage, causing P type sealing coat is high potential in the part near Semiconductor substrate upper surface, and P type sealing coat is low potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of N-type is high potential.
And, described second voltage is positive voltage, described P type sealing coat close to described second electrode portion region formed depletion layer area, effectively change the electromotive force of P type sealing coat upper surface, so that owing to the noise electronics of semiconductor substrate surface defect generation is derived by the high voltage in the first electrode portion and the second electrode portion, and then prevent the generation of dark current.
But, in further embodiments, described first conduction type is N-type, second conduction type is P type, described second conductivity type regions is territory, p type island region and the photo-generated carrier collected is hole, and described first voltage is negative voltage, and causing the sealing coat of N-type is low potential in the part near Semiconductor substrate upper surface, the sealing coat of N-type is high potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of P type is low potential.
And described second voltage is negative voltage, form transoid doped region, the effective electromotive force changing P type sealing coat upper surface at described N-type sealing coat close to the region in described second electrode portion.So that owing to the noise hole of semiconductor substrate surface defect generation is derived by the low-voltage in the first electrode portion and the second electrode portion, it is prevented that the generation of dark current.
In another embodiment, described imageing sensor also includes: be formed at the shallow trench isolation region that described imageing sensor is peripheral.Wherein, the photodiode of described formation is surrounded by shallow trench isolation (STI) region formed by known STI technique, and described shallow trench isolation can aid in the crosstalk and interference that prevent coming from neighbor (not shown).
By the following examples, illustrate according to the preferred embodiment of the present invention.
There is multiple pixel in imageing sensor, each pixel is formed in the photodiode in Semiconductor substrate.For simplicity, illustrate only a pixel to show various aspects of the invention.
Fig. 1 is the profile of the pixel of imageing sensor according to a first embodiment of the present invention.In the present embodiment, described first conduction type is P type, and described second conduction type is N-type, described second conductivity type regions is N-type region territory, described imageing sensor includes: photodiode 101, and it is by forming N-type region territory in P-type semiconductor substrate 100, thus forming photodiode；P type sealing coat 102, is formed at the inside of described P-type semiconductor substrate 100 and is positioned at the top in described photodiode 101 region；First heavily doped region 103, it is N-type region territory, is formed at the inside of described P-type semiconductor substrate 100, contacts the sidepiece being positioned at P type sealing coat 102；First electrode portion 104, it is formed at the surface of described P-type semiconductor substrate 100, and is contacted with described first heavily doped region 103；Second electrode portion 105, covers the subregion being formed on described P type sealing coat 102；The area of grid 106 of transfer tube, it is formed at the upper surface of described P-type semiconductor substrate 100；Floating diffusion regions 107, it is N-type heavy doping, and described floating diffusion regions 107 is contacted with described area of grid 106 and is formed at described P-type semiconductor substrate 100 inside.
Specifically, described P-type semiconductor substrate 100 can be include P-type substrate with extension in described suprabasil P type epitaxial layer.In another embodiment, described P-type semiconductor substrate 100 can only include P type epitaxial layer and not include substrate.
Described N-type region territory and the territory, p type island region in P-type semiconductor substrate 100 form PN junction to constitute photodiode 101 in its position, boundary, described photodiode 101 is used for converting light signals into the signal of telecommunication, namely produce photo-generated carrier electron-hole pair under light illumination, and collect described electronics.
Described P type sealing coat 102 is also referred to as pinning layer, and the photodiode 102 that this P type sealing coat 102 and the N-type region territory under it are formed constitutes pinned diode, and when photodiode 102 is completely depleted, the electromotive force of photodiode can be pinned at steady state value.
Described first heavily doped region 103 directly adopts N-type ion implanting to be formed, without annealing.The area of grid 106 of described transfer tube is for being transferred to floating diffusion regions 107 by the photo-electric charge in photodiode 101, described area of grid 106 can be through conventional electrodes method, the multilayer transmission grid that such as chemical vapour deposition (CVD) (CVD) or plasma activated chemical vapour deposition (PECVD) are formed, described floating diffusion regions 107 is N-type heavily doped region.
In order to avoid from the crosstalk of neighbor and interference, described imageing sensor also includes being formed at the shallow trench isolation region 108 that described imageing sensor is peripheral.The photodiode 101 of described formation is surrounded by shallow trench isolation (STI) region 108, described shallow trench isolation region can be formed by suitable manufacturing process, such as, can pass through to utilize the surface of lithographic patterning P-type semiconductor substrate, and utilize this surface of plasma etching to form sti trench groove, then utilize dielectric material to fill this sti trench groove, thus forming sti region 108.
The photo-generated carrier collected due to described photodiode 101 is electronics, therefore, positive electricity is provided to be pressed on described first electrode portion 105, causing P type sealing coat 102 is high potential in the part near Semiconductor substrate 100 upper surface, P type sealing coat 102 is low potential in the part away from Semiconductor substrate 100 upper surface, and the photo-generated carrier collecting region of the N-type of described photodiode 101 is high potential.
And, described second voltage is positive voltage, described P type sealing coat 102 close to described second electrode portion 105 region formed depletion layer area, effectively change the electromotive force of P type sealing coat 102 upper surface, so that owing to the noise electronics of semiconductor substrate surface defect generation is derived by the high voltage in the first electrode portion 104 and the second electrode portion 105, and then prevent the generation of dark current.
Fig. 2 is the profile of the pixel of imageing sensor according to the second embodiment of the present invention.Compared with first embodiment, the difference of the present embodiment is in that, described first conduction type is N-type, described second conduction type is P type, described second conductivity type regions is territory, p type island region, i.e. photodiode 201, it is by forming territory, p type island region in N-type semiconductor substrate 200, thus forming photodiode；N-type sealing coat 202, is formed at the inside of described N-type semiconductor substrate 200 and is positioned at the top in described photodiode 201 region；First heavily doped region 203, it is territory, p type island region, is formed at the inside of described N-type semiconductor substrate 200, contacts the sidepiece being positioned at N-type sealing coat 202；First electrode portion 204, it is formed at the surface of described N-type semiconductor substrate 200, and is contacted with described first heavily doped region 203；Second electrode portion 205, covers the subregion being formed on described N-type sealing coat 202；The area of grid 206 of transfer tube, it is formed at the upper surface of described N-type semiconductor substrate 200；Floating diffusion regions 207, it is P type heavy doping, and described floating diffusion regions 207 is contacted with described area of grid 206 and is formed at described N-type semiconductor substrate 200 inside.
The photo-generated carrier that described photodiode 201 is collected is hole, described first voltage is negative voltage, causing P type sealing coat 202 is low potential in the part near Semiconductor substrate 200 upper surface, the sealing coat 202 of P type is high potential in the part away from Semiconductor substrate 200 upper surface, and the photo-generated carrier collecting region of N-type is low potential.
And described second voltage is negative voltage, transoid doped region is formed close to 202 in the region in described second electrode portion 205 at described P type sealing coat, the effective electromotive force changing N-type sealing coat 202 upper surface, so that owing to the noise hole of semiconductor substrate surface defect generation is derived by the low-voltage in the first electrode portion and the second electrode portion.
Being illustrative for property of above-described embodiment illustrates principles of the invention and effect thereof, but the present invention is not limited to above-mentioned embodiment.Above-described embodiment all under the spirit and category of the present invention, in claims, can be modified by those skilled in the art.Therefore protection scope of the present invention, should cover such as claims of the present invention.
Claims (9)
1. an imageing sensor, including:
Photodiode, it by forming the second conductivity type regions in the first conductive type semiconductor substrate, thus forming photodiode, wherein, described second conductivity type regions is as photo-generated carrier collecting region；
First conduction type sealing coat, it is formed at the inside of described first conductive type semiconductor substrate, is positioned at the top of photodiode area；
First heavily doped region, it has the second conduction type, is formed at the inside of described first conductive type semiconductor substrate, is contacted with the sidepiece of the first conduction type sealing coat；
First electrode portion, it is formed at the surface of described first conductive type semiconductor substrate, and is contacted with described first heavily doped region；
Second electrode portion, it covers the subregion being formed on described first conduction type sealing coat；
The area of grid of transfer tube, it is formed at the upper surface of described first conductive type semiconductor substrate；
Floating diffusion regions, it has the second conduction type heavy doping, and it is contacted with described area of grid and is formed at described first conductive type semiconductor substrate interior；
There is provided the first voltage in described first electrode portion, make generation electric potential difference between the first heavily doped region and the first conduction type sealing coat being connected electrically, and then the carrier of the second conduction type produced due to the defect of semiconductor substrate surface is derived through the first electrode, it is prevented that the generation of dark current.
2. imageing sensor according to claim 1, it is characterized in that, described first conduction type is P type, second conduction type is N-type, the photo-generated carrier collected is electronics, and described first voltage is positive voltage, and the sealing coat causing P type is high potential in the part near Semiconductor substrate upper surface, the sealing coat of P type is low potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of N-type is high potential；The noise electronics that semiconductor substrate surface defect produces is derived by the high voltage in the first electrode portion, and then prevents the generation of dark current.
3. imageing sensor according to claim 1, it is characterized in that, described first conduction type is N-type, second conduction type is P type, the photo-generated carrier collected is hole, and described first voltage is negative voltage, and the sealing coat causing N-type is low potential in the part of close Semiconductor substrate upper surface, the sealing coat of N-type is high potential in the part away from Semiconductor substrate upper surface, and the photo-generated carrier collecting region of P type is low potential；The noise hole that semiconductor substrate surface defect produces is derived by the low-voltage in the first electrode portion, it is prevented that the generation of dark current.
4. imageing sensor according to claim 2, it is characterized in that, there is provided the second voltage in described second electrode portion, described first conduction type sealing coat close to described second electrode portion region formed depletion layer area, change the electromotive force of the first conduction type sealing coat upper surface.
5. imageing sensor according to claim 3, it is characterized in that, there is provided the second voltage in described second electrode portion, described first conduction type sealing coat close to described second electrode portion region formed transoid doped region, change the electromotive force of the first conduction type sealing coat upper surface.
6. the imageing sensor according to any one in claim 4 or 5, it is characterised in that described second electrode portion is polysilicon material or metal material.
7. imageing sensor according to claim 1, it is characterised in that described imageing sensor also includes: be formed at the shallow trench isolation region that described imageing sensor is peripheral.
8. imageing sensor according to claim 1, it is characterised in that described first conductive type semiconductor substrate includes the first conduction type substrate with extension in described suprabasil first conductive type epitaxial layer.
9. imageing sensor according to claim 1, it is characterised in that described first electrode portion adopts metal conducting electrodes.
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| CN110444556B (en) * | 2019-08-30 | 2021-12-03 | 上海华力微电子有限公司 | CMOS sensor and method for forming CMOS sensor |
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| CN101471366A (en) * | 2007-12-28 | 2009-07-01 | 东部高科股份有限公司 | Image sensor and method for manufacturing the sensor |
| CN103117289A (en) * | 2011-08-12 | 2013-05-22 | 索尼公司 | Solid-state imaging element, manufacturing method, and electronic device |
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| CN101471366A (en) * | 2007-12-28 | 2009-07-01 | 东部高科股份有限公司 | Image sensor and method for manufacturing the sensor |
| CN103117289A (en) * | 2011-08-12 | 2013-05-22 | 索尼公司 | Solid-state imaging element, manufacturing method, and electronic device |
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Effective date of registration: 20171031 Address after: Jiaxing City, Zhejiang province 314100 Jiashan Huimin street 1 Building 2 Taisheng Road No. 111 building 201 room Patentee after: Galaxycore Microelectronics (Zhejiang) Co., Ltd. Address before: 201203 floor, building No. 560, Pudong New Area, Shanghai, summer road, No. 2, building 11 Patentee before: Galaxycore Microelectronics (Shanghai) Co., Ltd. |
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