CN102709304B - Photodiode and method for improving full-trap capacity and quantum efficiency of image sensor - Google Patents
Photodiode and method for improving full-trap capacity and quantum efficiency of image sensor Download PDFInfo
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Abstract
The invention relates to a complementary metal oxide semiconductor (CMOS) solid image sensor, and particularly relates to a photodiode and a method for improving the full-trap capacity and the quantum efficiency of an image sensor. In order to ensure that the extended full-trap capacity can be fully used up so that the extension is not based on wasting the streaking performance of images, and fundamentally improve key performance indexes of pixel units, such as dynamic range, signal to noise ratio, and sensitivity. In order to achieve the objective the invention adopts the following technical scheme: an N buried layer with a shallower depth is injected to a P type epitaxial layer, a high-concentration P+-doped clamping layer is arranged on the N buried layer, a second N buried layer is arranged under the N buried layer, and a longitudinal P insertion layer structure is formed from the interface of the second N buried layer and the P type epitaxial layer to the inner part of the N buried layer. The photodiode and the method provided by the invention is mainly applied to the design and manufacture of the image sensor.
Description
Technical field
The present invention relates to complementary metal oxide semiconductors (CMOS) (CMOS) solid state image sensor, particularly a kind of photoelectric diode structure and manufacture method that improves the full trap capacity of cmos image sensor and quantum efficiency.Specifically, relate to the full trap capacity of raising imageing sensor and quantum efficiency photodiode and method.
Background technology
In recent years, benefit from the progress of standard CMOS process and updating of CMOS manufacturing process, cmos image sensor has surmounted the main flow that ccd image sensor becomes solid state image sensor, has realized the develop rapidly of cmos image sensor in recent years.In the cmos image sensor field, development by means of the back side illuminaton technology, the pixel cell size has realized the great-leap-forward reduction: by tradition just according to fall sharply 0.7um to the back-illuminated type technology of the 3um under formula, make cmos image sensor realize low-power consumption, low cost, the advantage that the ccd image sensors such as high integration are incomparable.
Cmos image sensor is by pixel unit array, analog front circuit, the common composition of D/A conversion unit and sequential control circuit.In whole imageing sensor framework, pixel unit array is in most crucial status.It will fundamentally determine the image quality of whole imageing sensor as the basic photosensitive unit of cmos image sensor.Pixel cell mainly is divided into active pixel and passive pixel by operation principle, can be divided into three pipe active pixels (3T-APS), clamp diode four pipe active pixels (4T-APS), clamp diode five pipe active pixels (5T-APS) by integrated level, wherein 4T-APS is the main flow in market.Inject the photosensitive region direction by incident light, be divided into FSI (Front-side-illumination) front illuminated formula imageing sensor, and BSI (Back-side-illumination) back side illuminaton image sensor structure.In traditional front illuminated formula imageing sensor, photon is the multiple layer metal layer by the photo-sensitive cell front surface, and finally enters the photodiode front surface; And in the back-illuminated type structure, the photon incident direction is constant, and whole pixel cell makes photon incident without photodiode front metal layer by the upset of positive structure, but by the photodiode back surface incident.
Back-illuminated type 4T APS cross-section structure as shown in Figure 1, this back-illuminated type 4T-APS is by a photodiode (180,200,110), floating empty diffusion node 160, transfer tube 170, reset transistor 150, source class follower 140 and address strobe pipe 130 form jointly.Back-illuminated type 4T active pixel photodiode is jointly to be made of three parts: 1. at the more shallow N buried regions 200 of degree of depth of the interior injection of P type epitaxial loayer 110,2. the high-concentration dopant P+ clamper layer 180 that forms with the surface, 3. extension 110 consists of jointly, and this photoelectric diode structure is used for receiving incident photon 111 and produces the signal charge corresponding with the incident light light intensity.Although this structure is main flow when design large scale pixel, yet, continuous reduction along with Pixel Dimensions, single pixel cell area will progressively be dwindled, and design these small-sized pixel and will face the new problem that some produce with dimension reduction: the key indexs such as dynamic range, signal to noise ratio and sensitivity can be reduced to some extent because Pixel Dimensions reduces.These limiting factors will worsen to some extent image quality and reduce detectable range of light intensity.And that the full trap capacity that increases small-sized pixel can fundamentally solve above-mentioned institute simultaneously will be influential.The expansion of full trap capacity can realize by design modifying photoelectric diode structure and technological parameter under small size technique, and the final high-performance small-sized pixel that realizes obtaining simultaneously high full trap capacity, high-quantum efficiency, low-dark current, high s/n ratio, high dynamic range.
Summary of the invention
the present invention is intended to overcome the deficiencies in the prior art, the full trap capacity that guarantees expansion can exhaust entirely, making this expansion is not take loss streaking performance as prerequisite, and fundamentally promote dynamic range, signal to noise ratio, the pixel such as sensitivity unit Key Performance Indicator, for achieving the above object, the technical scheme that the present invention takes is, improve the photodiode of the full trap capacity of imageing sensor and quantum efficiency, structure is: inject the N buried regions that the degree of depth is more shallow in P type epitaxial loayer, it is high-concentration dopant P+ clamper layer above the N buried regions, also be provided with second N buried regions below the N buried regions, inner to the N buried regions from itself and P type epitaxial loayer interface place in second N buried regions, be formed with P insert layer structure longitudinally.
Improve the photodiode formation method of the full trap capacity of imageing sensor and efficient, comprise the steps:
The phosphorus that first injects higher concentration on P type epitaxial loayer forms the N buried regions, and its Implantation Energy scope is 50 kiloelectron-volts～100 kiloelectron-volts, and the doping content scope is 7e11～1.5e12/cm
3Carry out phosphorus again and inject to form second N buried regions of photodiode, it injects, and degree of depth is darker and be positioned under the N buried regions, and its Implantation Energy scope is 150 kiloelectron-volts～300 kiloelectron-volts, and the doping content scope is 1e11～9e11/cm
3After forming two N buried structures, inject the boron difluoride formation P insert layer of P type doping from it with P type epitaxial loayer interface place in second N buried regions.
Inject the boron difluoride formation P insert layer of P type doping from it with P type epitaxial loayer interface place in second N buried regions, the Implantation of P type doping was divided into for two steps, it is regional that the first step uses boron difluoride to inject second N buried regions internal upper part P1 of formation, the Implantation Energy scope is 1,500 kiloelectron-volts～2000 kiloelectron-volts, the doping content scope is 1e12～2e12/cm
3Second step uses boron difluoride to inject and forms the P2 zone that below, P1 zone is adjoined, and the Implantation Energy scope is 2500 kiloelectron-volts～3500 kiloelectron-volts, and the doping content scope is all 1e12～2e12/cm
3, the final embedded photoelectric diode structure that forms two N buried regions P insert layers.
Technical characterstic of the present invention and effect:
The new clamp diode structure of two N buried regions P insert layer of introducing, under the constant prerequisite of pixel photosensitive area,
1, the full trap capacity of small pixel clamp diode of the present invention is larger.Owing to injecting second N buried regions N2 under initial N1 buried regions, increased photodiode sidewall capacitance value, then increased full trap capacity.
2, small pixel clamp diode electric charge of the present invention more easily is exported the node to FD.Because two N buried structures are gradient N buried regions of gradual change from the top down, upside concentration high potential is higher, and downside concentration is lower than low potential, and this will promote the transfer of electronics.More because the P insert layer is that transition region does not affect the transfer of electronics above the N buried regions, do not introduce fixed pattern noise from the bottom insertion of N buried regions.
3, new clamp diode is realized higher quantum efficiency.Owing to having adopted two N buried structures, the injection degree of depth physically can realize Longitudinal Extension, then expands vertical depletion region scope, can increase the quantum efficiency near substrate back shortwave spectrum.
4, newly-designed small pixel clamp diode is more easily realized entirely exhausting, and then realizes the effect of " without streaking ".Because the P insert layer is introduced into the zone of originally easy residual charge in N buried regions kernel, so under the help of this P insert layer, originally easily producing the residual N buried regions of electric charge has realized entirely exhausting, this will make in pixel cell, it is residual that the exposure of former frame can not produce electric charge to next frame, can not produce streaking.
Description of drawings
Fig. 1 tradition back-illuminated type 4T-APS pixel cell structure schematic diagram.
Fig. 2 tradition back-illuminated type 4T-APS pixel cell structure profile.
Fig. 3 is injected traditional back-illuminated photodiode (PPD) section of structure that forms by the single step N-type.
What Fig. 4 the present invention adopted injects by two step N-types the two N buried regions PPD section of structures that form.
Fig. 5 the present invention inserts two N buried regions P insert layer PPD structural profiles that P type insert district forms on Fig. 4 basis.
Fig. 6 embeds the layering PPD profile of P insert layer from the left side.
Fig. 7 embeds the layering PPD profile of P insert layer from the right side.
Fig. 8 embeds the layering PPD profile of P insert layer from upside.
Embodiment
The present invention relates to the structural optimization of a kind of photodiode (PD), this optimizing structure can make small-sized pixel realize higher full trap capacity, makes it not to worsen pixel cell streaking as cost.
In traditional back-illuminated type clamper photodiode (PPD) structure, photodiode N buried regions 200 is by step N-type doping realization, as shown in Figure 1.And along with Pixel Dimensions day by day dwindles, the photodiode area of single pixel also constantly reduces, and N buried regions area will reduce thereupon, if still use this structure, can't provide enough full trap capacity for pixel cell.And if in order to increase full trap capacity, the Implantation Energy that only improves N buried regions 200 makes it the darker N buried regions of vertical degree of depth and attempts to increase full trap capacity, this will make this N buried regions lack significantly vertically concentration gradient, cause that the N buried regions internal electron away from transmission grid (TX) is difficult to be transferred to floating empty diffusion node (FD) node more.Above phenomenon will cause serious streaking.
The present invention considers the streaking performance, and architecture advances of the present invention is comprised of two steps, and the first step does not adopt the single step high energy ion implantation, but adopts two step N-types inject to form the gradient gradual change on darker on a size, concentration two N buried structures; Second step is realized exhausting fully for the full trap capacity that helps to expand, and a plurality of P types insert the interface place that the zone vertically is inserted in new N buried regions and substrate.
Inject in the first step and realize two N buried structures, as shown in Figure 4, the injection realization of initial N1 buried regions is identical with traditional structure Fig. 3.Different is, after the N1 buried regions is realized, need to introduce new N-type of a step and inject, this step N-type inject use more high-energy, than the N-type doping realization of low dosage, finally form a N2 buried regions that is positioned under initial N1 buried regions.Thereby this new buried regions will increase by increasing sidewall capacitance 310 electric capacity of whole photodiode and improve full trap capacity.
In this pair N buried structure, because the intensification of N buried regions longitudinal size, N buried regions depletion region also realized to the expansion at the photodiode back side, and this will make the quantum efficiency of this structure be optimized simultaneously.Because in back side illumination image sensor, photon is injected pixel cell by substrate back, and depletion region and the back side are nearer, and the depleted district collection of more light induced electron will be arranged, the depleted district collection of how blue light induced electron will be arranged, and this will significantly improve short wavelength's quantum efficiency.
As mentioned above, adopt two N buried structures can significantly increase the full trap capacity of pixel cell, but produce a problem: the peripheral P type of this pair N buried regions substrate can only exhaust this N buried regions outer peripheral areas thereupon, in two N buried regions, nuclear electron can't be resetted fully at transfer tube (TX) open period and stay, and the electronics under these are residual will cause streaking and introduce random noise in pel array.
In the second step that structure realizes, the effect of introducing P type insert layer is and addresses this problem.As shown in Figure 5, after two N buried structures, P type insert layer is introduced into.This P type insert layer is injected by two high-octane P types of step and is realized.Under the help of new mask plate, the p type impurities of two step different-energies are injected into respectively N buried regions and substrate interface place in mask plate opening scope, and have finally formed P insert layer structure longitudinally.
For make this P type insert district accurately deeply to two N buried structures electric charge be not easy to exhaust the place, realize " help and exhaust " function, the formation of P type insert district realizes by two step P type Implantations, forms respectively P1 zone and P2 zone, as shown in Figure 5.The more close N1 in P1 zone zone, its effect are to guarantee that whole P type insert district is to be positioned at N buried regions kernel; P2 zone is injected darker, more close substrate one side, its effect is to guarantee that whole P insert district forms good electromotive force with substrate and contact, avoid the P1 zone by around the complete embedding of N2 buried regions and cause that unnecessary electromotive force floats sky.
Why be chosen in the N buried regions and insert the P insert layer near substrate one side, rather than select from N buried regions left side, right side, upside insert this P insert layer be because of: all layering PPD structures, what function served as bridge was played in a plurality of N2 zone is transition region (C district), C district as shown in Fig. 5,6,7,8.Transition region is extremely important, and the electronics that a plurality of N2 collect in the zone all will just can be transferred to TX through this transition region, and GuCQu expires the trap capacity impact more greatly to single pixel and be comparatively responsive.If insert the P insert layer from the left side, as shown in Figure 6, the width of transition region will be formed the mask plate of P insert layer to the impact of version error, cause the full trap capability value of different pixels different, produce fixed pattern noise in whole pel array; If insert the P insert layer from the right side, as shown in Figure 7, C will away from the transmission grid, cause electronics to be difficult for being transferred to the FD node in the district; If from insert the P insert layer near N buried regions upside, as shown in Figure 8, the shortcoming that also will cause the electronics collected by the different N district to be difficult for being transferred.In this invention, because this P insert layer is by vertical insertion N buried regions and substrate intersection, the transition region geometric depath is not subjected to the version error effect in the present invention, and can be simply guarantee this district not by pinch off by using more high-octane P1 district to make, thereby fundamentally solved in layering PPD electronics difficult by total transfer, be subject to the shortcoming such as mask plate impact.
The present invention is further described below in conjunction with accompanying drawing and embodiment.
Basic thought of the present invention is to form two N buried regions P insert layer clamper photodiodes by add the P insert layer in two N buried structures, the shortcoming of full trap off-capacity when being used for improving the design small pixel.Its photodiode specific embodiments is:
With reference to shown in Figure 5, be that the phosphorus that first injects higher concentration on the P type epitaxial loayer 110 of 1e15/cm3 forms N1 buried regions 200 in doping content, its Implantation Energy scope is 50KeV～100KeV, the doping content scope is 7e11～1.5e12/cm3; The phosphorus that re-uses the high-energy low dosage inject to form the N2 buried regions 300 of photodiode, and it injects, and degree of depth is darker and be positioned under the N1 buried regions, and its Implantation Energy scope is 150KeV～300KeV, and the doping content scope is 1e11～9e11/cm3.After forming two N buried structures, under the help of new mask plate, in mask plate opening 600 and 610 scopes, the boron difluoride that injects the doping of P type forms the P insert layer.This P type Implantation was divided into for two steps, and the first step uses more low-energy BF2 to inject to form P1 zone 400, and its Implantation Energy scope is 1,500KeV～2000KeV, and the doping content scope is 1e12～2e12/cm3.Second step uses the BF2 of higher-energy to inject to form P2 zone 410, and its Implantation Energy scope is 2500Kev～3500Kev, and the doping content scope is all 1e12～2e12/cm3, the final embedded photoelectric diode structure that forms two N buried regions P insert layers.
Specifically introduce preferred forms below in conjunction with embodiment:
Be on the P type epitaxial loayer of 1e15/cm3 at boron doping concentration, twice injection N-type impurity forms the N district of photodiode jointly.When injecting for the first time, use the traditional PD reticle, implanted dopant is phosphorus, and its energy is 75KeV, and dosage is 1.0e12/cm3, in order to form near surface and the larger N1 buried regions 200 of concentration; Second step uses the traditional PD reticle equally, and implanted dopant is all phosphorus, and its energy is higher is 250KeV, and dosage is 0.4e12/cm3, is positioned at the N2 buried regions 300 of N1 buried regions below in order to formation; The 3rd step injected and forms P type insert layer 400 and 410, needed to use a new reticle, in new mask plate opening 600 and 610, inject continuously twice boron difluoride impurity, inject to form for the first time P1 zone 400, its Implantation Energy is 1800KeV, and dosage is 1.6e12/cm3.Second step injection boron difluoride formation P2 zone 410, its Implantation Energy is 2600KeV, dosage is 1.6e12/cm3.
Adopt above technological parameter can realize photoelectric diode structure optimization, finally realize the full trap capacity extension technology of small-sized pixel.In this invention, the expansion of full trap capacity is not show as cost to sacrifice streaking.And this improves structure, not only can promote the full trap capacity of small-sized pixel, and makes the photodiode that adopts this structure realize higher quantum efficiency.
Claims (3)
1. a raising imageing sensor is expired trap capacity and quantum efficiency photodiode, structure is: inject the N buried regions that the degree of depth is more shallow in P type epitaxial loayer, it is high-concentration dopant P+ clamper layer above the N buried regions, it is characterized in that, also be provided with second N buried regions below the more shallow N buried regions of the degree of depth, from itself and P type epitaxial loayer interface place, be formed with P insert layer structure longitudinally in second N buried regions.
2. a raising imageing sensor is expired trap capacity and quantum efficiency photodiode formation method, it is characterized in that, the phosphorus that first injects higher concentration on P type epitaxial loayer forms the N buried regions, and its Implantation Energy scope is 50 kiloelectron-volts～100 kiloelectron-volts, and the doping content scope is 7e11～1.5e12/cm
3Carry out phosphorus again and inject to form second N buried regions of photodiode, it injects, and degree of depth is darker and be positioned under the N buried regions, and its Implantation Energy scope is 150 kiloelectron-volts～300 kiloelectron-volts, and the doping content scope is 1e11～9e11/cm
3After forming two N buried structures, inject the boron difluoride formation P insert layer of P type doping from it with P type epitaxial loayer interface place in second N buried regions.
3. raising imageing sensor as claimed in claim 2 is expired trap capacity and quantum efficiency photodiode formation method, it is characterized in that, inject the boron difluoride formation P insert layer of P type doping from it with P type epitaxial loayer interface place in second N buried regions, the Implantation of P type doping was divided into for two steps, it is regional that the first step uses boron difluoride to inject second N buried regions internal upper part P1 of formation, the Implantation Energy scope is 1,500 kiloelectron-volt～2000 kiloelectron-volts, and the doping content scope is 1e12～2e12/cm
3Second step uses boron difluoride to inject and forms the P2 zone that below, P1 zone is adjoined, and the Implantation Energy scope is 2500 kiloelectron-volts～3500 kiloelectron-volts, and the doping content scope is all 1e12～2e12/cm
3, the final embedded photoelectric diode structure that forms two N buried regions P insert layers.
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