CN102681356A - Local exposure method and local exposure device - Google Patents

Local exposure method and local exposure device Download PDF

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Publication number
CN102681356A
CN102681356A CN2012100692910A CN201210069291A CN102681356A CN 102681356 A CN102681356 A CN 102681356A CN 2012100692910 A CN2012100692910 A CN 2012100692910A CN 201210069291 A CN201210069291 A CN 201210069291A CN 102681356 A CN102681356 A CN 102681356A
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China
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mentioned
illumination
luminophor
light emitting
light
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CN2012100692910A
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CN102681356B (en
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森山茂
田中茂喜
尾上幸太朗
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2049—Exposure; Apparatus therefor using a cantilever
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a local exposure method and a local exposure device, capable of easily adjusting exposure of each area which is accurately set in a substrate surface, raising uniformity of a resist residual film which has been developed, and suppressing deviation of wire width and spacing of a wiring pattern. The local exposure method comprises the steps of: for a specified area of a photosensitive film formed on a processed substrate (G), calculating an object illumination for radiating according to the film thickness; determining at least one light emitting body capable of radiating to the specified area; for the determined light emitting body (GR), if other light emitting bodies adjacent to the light emitting body can radiate to the specified area, subtracting illumination of interference lights caused by light emitting of the other light emitting bodies from the object illumination, and setting the calculated value as a corrected setting illumination; determining a driving current value according to the corrected setting illumination, and enabling one light emitting body to emit light according to the driving current value.

Description

Partial exposure method and partial exposure device
Technical field
The present invention relates to a kind of to having formed the partial exposure method that substrate carries out the partial exposure processing that is processed of light-sensitive surface.
Background technology
For example in the manufacture process of FPD (flat-panel monitor), form circuit pattern through photo-mask process.
In this photo-mask process; As also putting down in writing in the patent documentation 1; After glass substrate etc. being processed the film that substrate forms regulation; Apply photoresist (below be called resist), form resist film (light-sensitive surface) through the preparation dried (drying under reduced pressure and pre-bake treatment) that makes the solvent evaporation in the resist.And, make above-mentioned resist film exposure accordingly with circuit pattern, this resist film is carried out development treatment and forms pattern.
In addition,, shown in Figure 19 (a), make resist pattern R have different thickness (R1 of thick film portion and film section R2), utilize this resist pattern to carry out repeatedly etch processes, can reduce photomask number and process number thus for this photo-mask process.In addition, can obtain this resist pattern R through half (shadow tone) exposure-processed of using half-tone mask, wherein, this half-tone mask has the transmitance different portions of light in a mask.
The circuit pattern that uses Figure 19 (a)～(e) to specify under the situation of the resist pattern R that in this half exposure, uses forms operation.
For example; In (a) of Figure 19, the Si layer 202 that on glass substrate G, constitutes and be used to form metal layer of electrodes 203 and stack gradually with gate electrode 200, insulation course 201, by a-Si layer (non-doping amorphous Si layer) 202a and n+a-Si layer 202b (phosphorus doping amorphous Si layer).
In addition, on metal level 203, likewise form after the resist film, make the solvent evaporation in the resist, afterwards, form resist pattern R through above-mentioned half exposure-processed and development treatment through drying under reduced pressure and pre-bake treatment.
Forming this resist pattern R (R1 of thick film portion and film section R2) afterwards, that kind as mask, is carried out etching (for the first time etching) to metal level 203 with this resist pattern R shown in Figure 19 (b).
Then, through plasma resist pattern R whole implementation ashing (ashing) is handled.Thus, shown in Figure 19 (c), obtain thickness and reduce the resist pattern R3 about half.
Then, shown in Figure 19 (d), R3 is utilized as mask with this resist pattern, and metal level 203, the Si layer 202 that make public carried out etching (etching for the second time), and is last, shown in Figure 19 (e), obtains circuit pattern through removing resist R3.
Yet; There is following problem: for using above-mentioned that kind to form half exposure-processed of the resist pattern R of R1 of thick film portion and film section R2; When forming resist pattern R; In real estate, under the uneven situation, produce deviation between the live width of formed pattern, the pattern at its thickness.
That is, use Figure 20 (a)～(e) to come to explain particularly, (a) of Figure 20 is the situation that the thickness t 2 of the film section R2 among the expression resist pattern R forms the thickness t 1 that (a) greater than Figure 19 illustrate.
In this case, with the operation shown in Figure 19 likewise, metal film 203 is implemented etchings (Figure 20 (b)), to resist pattern R whole implementation ashing treatment (Figure 20 (c)).
At this; Shown in Figure 20 (c); Obtain thickness and be reduced to the resist pattern R3 about half, but the thickness of removed resist film is identical with the situation of Figure 19 (c), so the spacing p2 between the illustrated a pair of resist pattern R3 is narrower than the spacing p1 that (c) of Figure 19 illustrates.
Thereby; According to this state, the spacing p1 narrow (live width of circuit pattern enlarges) that the spacing p2 of the circuit pattern that obtains through metal film 203 and Si layer 202 are implemented the removal (Figure 20 (e)) of etchings (Figure 20 (d)) and resist pattern R3 illustrates than (e) of Figure 19.
To the problems referred to above, adopted following method:, confirm that through film thickness measuring the thickness among the resist pattern R forms the regulation position greater than expectation value, improves the exposure sensitivity at this position according to each mask pattern that makes light transmission when the exposure-processed in the past.
Promptly; Before exposure-processed, resist film is heated and make in the pre-bake treatment of solvent evaporation; Make the heating measurer in the real estate variant, the exposure sensitivity in the afore mentioned rules position is changed, the residual thickness after the development treatment is adjusted (homogenising in the face).
Specifically, the well heater that is used in the pre-bake treatment is divided into a plurality of zones, the well heater after will cutting apart carries out drive controlling independently, carries out the temperature adjustment according to each zone thus.
And, carry out the adjustment of heating-up temperature through the height near pin (distance between change well heater and the substrate) of change supporting substrates.
Patent documentation 1: TOHKEMY 2007-158253 communique
Summary of the invention
The problem that invention will solve
Yet; As stated; Under the situation of the adjustment of carrying out residual thickness through the heat treated of being undertaken by prebake, the heater area after cutting apart need be guaranteed size to a certain degree owing to the restriction of hardware, therefore exists the heating that can't carry out tiny zone to adjust this problem.
In addition, for through change near the heating adjustment that the height of pin carries out, need the number of working processes of change pin height, therefore exist production efficiency to reduce this problem.
The present invention accomplishes in view of the above-mentioned problem points of technology in the past; A kind of following partial exposure method and partial exposure device are provided: can easily adjust the exposure in each zone of setting subtly in the real estate; The homogeneity of the residual film of resist after the raising development treatment can suppress the live width of wiring pattern and the deviation of spacing.
The scheme that is used to deal with problems
In order to address the above problem; A kind of partial exposure method involved in the present invention; Substrate is carried out with horizontality horizontal direction substrate conveying transport path above; The luminophor that one or more light-emitting component in a plurality of light-emitting components that will be arranged by wire ground on the direction of intersecting with the substrate throughput direction constitutes optionally carries out light emitting drive as light emitting control unit; Through above-mentioned luminophor the light-sensitive surface on the aforesaid substrate that moves with respect to above-mentioned luminophor along the substrate throughput direction below the above-mentioned luminophor is implemented exposure-processed; This partial exposure method is characterised in that to possess following steps: the object illumination calculation procedure: to the regulation zone of the light-sensitive surface that on aforesaid substrate, forms, obtain the object illumination that will shine according to its thickness; Luminophor is confirmed step: at least one luminophor of confirming to shine the afore mentioned rules zone; Set the illumination calculation procedure: to a determined luminophor; Other luminophor adjacent with this luminophor can shine under the situation in the afore mentioned rules zone; From above-mentioned object illumination, deduct illumination, and the value of being calculated is made as the setting illumination after the correction by the luminous interference light that causes of above-mentioned other luminophor; And driving current value is confirmed step: the above-mentioned setting illumination according to after proofreading and correct decides driving current value, makes an above-mentioned luminophor luminous according to this driving current value.
According to this structure, the driving current value of a selected luminophor is set at the value of having considered from the interference illumination of other adjacent luminophor.
Therefore, can shine accurately making the thinner position arbitrarily of thickness, after development treatment, can be made as the thickness of expectation with predefined exposure (object illumination).
Thereby; Even for example in half exposure-processed, make resist film have (being the such thin thickness of film section) under the situation of different thickness (thick film portion and film section); Make the resist thickness after the development treatment even, can suppress the live width of wiring pattern and the deviation of spacing.
On the other hand; The present invention relates to a kind of partial exposure device; Its constitute substrate is carried out with horizontality horizontal direction substrate conveying transport path above; The luminophor that one or more light-emitting component in a plurality of light-emitting components that will be arranged by wire ground on the direction of intersecting with the substrate throughput direction constitutes optionally carries out light emitting drive as light emitting control unit; Through above-mentioned luminophor the light-sensitive surface on the aforesaid substrate that moves with respect to above-mentioned luminophor along the substrate throughput direction below the above-mentioned luminophor is implemented exposure-processed, this partial exposure device is characterised in that to possess: the object illumination computing unit; It obtains the object illumination that will shine to the regulation zone of the light-sensitive surface that on aforesaid substrate, forms according to its thickness; Luminophor is confirmed the unit, and it confirms to shine at least one luminophor in afore mentioned rules zone; Set the illumination computing unit; It is to a determined luminophor; Other luminophor adjacent with this luminophor can shine under the situation in the afore mentioned rules zone; From above-mentioned object illumination, deduct illumination, and the value of being calculated is made as the setting illumination after the correction by the luminous interference light that causes of above-mentioned other luminophor; And driving current value confirms the unit, and it decides driving current value according to the above-mentioned setting illumination after proofreading and correct, and makes an above-mentioned luminophor luminous according to this driving current value.
The effect of invention
According to the present invention; Can access a kind of partial exposure method; Can easily adjust in the real estate exposure in each zone of setting subtly and improve the homogeneity of the residual film of resist after the development treatment, and can suppress the live width of wiring pattern and the deviation of spacing.
Description of drawings
Fig. 1 is the stereographic map of the whole summary structure of an expression embodiment involved in the present invention.
Fig. 2 is the stereographic map of the whole summary structure of an expression embodiment involved in the present invention, is the figure that the state that is processed substrate has been moved in expression.
Fig. 3 is the sectional view of the A-A direction of arrow of Fig. 2.
Fig. 4 is the figure of the configuration of the partial exposure device in the schematically illustrated photo-mask process.
Fig. 5 is the vertical view that the arrangement of the light-emitting component that constitutes light source is shown.
Fig. 6 is the process flow diagram of the operation of the expression setup parameter of obtaining the light emitting control program that the partial exposure device of Fig. 1 had.
Fig. 7 is the figure that is used for explaining in the light emitting control of the light-emitting component of the partial exposure device of Fig. 1, is the vertical view that is processed substrate that is processed the partial exposure device on the substrate with coordinate representation.
Fig. 8 is the table of example that is illustrated in the setup parameter of the light emitting control program of carrying out in the partial exposure device of Fig. 1.
Fig. 9 is the chart that is illustrated in the partial exposure device of Fig. 1 by the curve of the illumination of the light emitting control group that constitutes light source.
Figure 10 is the process flow diagram of flow process that the operation of the light emission drive current value in the light emitting control group is calculated in expression.
Figure 11 is the process flow diagram of the flow process of the expression operation of confirming the peak value irradiation position in each light emitting control group.
Figure 12 is the side view that is used for explaining the operation of the peak value irradiation position of confirming each light emitting control group.
Figure 13 be the expression light emission drive current value of obtaining light emission drive current value and the relation between the illumination and adjacent light emitting control group in each light emitting control group with interference illumination between the process flow diagram of flow process of operation of relation.
Figure 14 is the side view that is used for explaining the light emission drive current value of the light emission drive current value of obtaining each light emitting control group and the relation between the illumination and adjacent light emitting control group and interferes the operation of the relation between the illumination.
Figure 15 is the process flow diagram of the action in the partial exposure device of presentation graphs 1.
Figure 16 is the vertical view of action of partial exposure that is used for the partial exposure device of key diagram 1.
Figure 17 is the chart of action of partial exposure that is used for the partial exposure device of key diagram 1.
Figure 18 is the vertical view that is used to explain the application examples of partial exposure method involved in the present invention.
(a)～(e) of Figure 19 is the sectional view that is used for explaining the formation operation of the wiring pattern that is used in half exposure-processed.
(a)～(e) of Figure 20 is the figure of formation operation that expression is used in the wiring pattern in half exposure-processed, is the sectional view of the thick situation of the situation of schematically illustrated resist thickness Figure 19.
Figure 21 is the process flow diagram of flow process of the operation of expression other embodiment involved in the present invention.
Description of reference numerals
1: the partial exposure device; 2: substrate transport path; 3: light irradiation unit; 4: light source; 9: light emitting drive portion; 20: conveying roller; 39: the substrate detecting sensor; 40: control part; G: glass substrate (being processed substrate); L:UV-LED element (light-emitting component); GR: light emitting control group (luminophor); T1: processing procedure table.
Embodiment
Below, with reference to a related embodiment of description of drawings partial exposure device of the present invention.Fig. 1 is the stereographic map of whole summary structure of the partial exposure device 1 of the related partial exposure method of expression embodiment of the present invention.In addition, Fig. 2 is the stereographic map from the partial exposure device 1 of the viewed different with Fig. 1, is that the figure as the state of the glass substrate G that is processed substrate has been moved in expression.In addition, Fig. 3 is the sectional view of the A-A direction of arrow of Fig. 2.In addition, Fig. 4 is the figure of the configuration of the partial exposure device 1 in the schematically illustrated photo-mask process.
Partial exposure device 1 shown in Fig. 1 to Fig. 3 is configured in in the lower unit, and this unit for example such substrate that will be processed on one side shown in (a)～(c) of Fig. 4 carries out serial photo-mask process on one side with horizontal state horizontal feed (being recited as advection later on carries) on directions X.
Promptly; In photo-mask process; Dispose resist applying device 51 (CT) and decompression dry device 52 (DP); This resist applying device 51 (CT) will be coated to as the resist liquid of light-sensitive surface and be processed substrate, and this decompression dry device 52 (DP) makes resist film (light-sensitive surface) drying on the substrate in post-decompression chamber.And, by disposing successively: prebake device 53 (PRB), it is used for resist film is bonded to the heat treated of substrate G; Cooling device 54 (COL), it is cooled to set point of temperature with this substrate G; Exposure device 55 (EXP), it makes public to form the circuit pattern of regulation to resist film; And developing apparatus 56 (DEV), it carries out development treatment to the resist film after making public.
At this, partial exposure device 1 (AE) involved in the present invention for example is configured in the arbitrary position shown in (a)～(c) of Fig. 4.That is, be configured in prebake device 53 (PRB) afterwards and developing apparatus 56 (DEV) assigned position before.
Partial exposure device 1 (AE) for such configuration; For example; Under the situation of using the eurymeric resist; When handling a plurality of substrate G continuously, the wiring pattern width is implemented (be used to reduce thickness) partial exposure to the afore mentioned rules zone greater than other zone between the pattern under the narrow situation in other zone of gap ratio in the regulation zone of all substrate G.
In addition, in following embodiment, illustrate the situation of eurymeric resist; But for partial exposure device involved in the present invention; Can also be applied to the situation of negative resist, in this case, to will the resist residual film more being implemented partial exposure in the residual regulation zone of heavy back.
Then, specify the structure of partial exposure device 1.Like Fig. 1～shown in Figure 3, partial exposure device 1 possesses substrate transport path 2, and this substrate transport path 2 is through being layed in a plurality of rollers 20 on the base 100 to directions X conveying substrate G with the mode that can rotate.Substrate transport path 2 have a plurality of in Y side upwardly extending columned roller 20, these a plurality of rollers 20 on the directions X across the interval of regulation and be configured in respectively on the base 100 with the mode that can rotate.In addition, a plurality of rollers 20 are configured to pass through belt (not shown) interlock, and a roller 20 is connected with roll driving apparatus (not shown) such as motor.In addition, in Fig. 1, for the explanation of the structure that makes this partial exposure device 1 is easier, with accompanying drawing nearby roller 20 broken sections of side represent.
In addition, as shown in the figure, above substrate transport path 2, dispose light irradiation unit 3, this light irradiation unit 3 is used for substrate G is carried out partial exposure (UV rayed).
This light irradiation unit 3 possesses the light source 4 of going up the wire of extending in substrate width direction (Y direction), and substrate G carries below this light source 4.
The light source 4 of above-mentioned wire constitutes as follows: a plurality of UV-LED element L that send the UV light of provision wavelengths (near for example, the wavelength any in g line (436nm), h line (405nm), the i line (364nm)) are arranged on the circuit substrate 7.For example, Fig. 5 (a) is the vertical view that circuit substrate 7 is obtained from beneath.Shown in Fig. 5 (a), a plurality of UV-LED element L are arranged in three row on circuit substrate 7.
At this, shown in Fig. 5 (a), a plurality of (nine in the accompanying drawings) UV-LED element L is used as a light emitting control unit (being made as light emitting control group GR), a plurality of light emitting control group GR 1～GR n(n is positive integer) is aligned to row.So a plurality of LED element L are made as light emitting control unit, can suppress the deviation of the luminous illumination between the light-emitting component thus.
In addition, using UV-LED element L still less to constitute under the situation of light source 4, shown in Fig. 5 (b), be desirably in substrate throughput direction (directions X) and substrate width direction (Y direction) and upward carry out interconnected with the overlapping mode of element L.
In addition, as shown in Figure 3, below light source 4, be provided with the rayed window 6 that forms by light diffusing board.That is, between light source 4 and substrate G, dispose rayed window 6 as irradiated body.
Like this, through the rayed window 6 that is formed by light diffusing board is set, the light of launching from light source 4 suitably spreads through rayed window 6, and the wire ground that is connected to of therefore adjacent UV-LED element L shines downwards.
In addition, as shown in Figure 3, constitute following structure: in the front and back of UV-LED element L, be provided with in substrate width direction (Y direction) and go up the light reflecting wall 8 that extends, launch from rayed window 6 expeditiously downwards by the light that UV-LED element L sends.
In addition, about constituting each light emitting control group GR of light source 4, control its light emitting control independently by light emitting drive portion 9 (Fig. 1) respectively.And, can control the para-electric flow valuve that each light emitting control group GR (UV-LED element L) is provided respectively.That is, the electric current that provides with light emitting drive portion 9 correspondingly, the luminous emission illumination of UV-LED element L of each light emitting control group GR can change.
In addition, control through the driving of the above-mentioned light emitting drive of 40 pairs of the control parts that constitute by computing machine portion 9.
In addition, with respect to substrate conveying G on substrate transport path 2, the height of the light transmitting site of light irradiation unit 3 can change.Promptly; As shown in Figure 3; About light irradiation unit 3; From below supporting, lifting shaft 11 can move up and down through the up-down drive division 12 (jacking gear) that for example is made up of cylinder that is arranged at base 100 the horizontal plate part 15a at two ends of length direction (Y direction) that is arranged at its supporting frame 15 by a pair of lifting shaft 11.
In addition, like Fig. 2, shown in Figure 3, the position below light irradiation unit 3 moves to, the lower surface of the horizontal plate part 15a of above-mentioned supporting frame 15 connects with the support unit 16 that is arranged at base 100.
In addition, in base 100, the upright respectively guide parts 13 that are provided with tubular in the left and right sides of up-down drive division 12.On the other hand, the lower surface at the horizontal plate part 15a of above-mentioned supporting frame 15 is respectively arranged with the axis of guide 14 that engages with above-mentioned guiding parts 13 in the left and right sides of above-mentioned lifting shaft 11.Thus, constitute following structure: along with the up-down of light irradiation unit 3, the axis of guide 14 slides in guiding parts 13 along the vertical direction, keeps the levelness of the rayed window 6 of light irradiation unit 3 accurately.
In addition, below light irradiation unit 3, be provided with illuminance transducer unit 30, this illuminance transducer unit 30 is used to detect the illumination (transmitted beam) from the light of light source 4 emissions and process rayed window 6.
This illuminance transducer unit 30 possesses signal test section and the illuminance transducer 31 of face up, and this illuminance transducer 31 is set on the movable plate 32, and this movable plate 32 can be gone up in substrate width direction (Y direction) and move.In addition, on the base under the light source 4 100, be equipped with along light source 4 in substrate width side upwardly extending pair of guide rails 33a, 33b.
Side is provided with the linear motor 34 that can move along above-mentioned pair of guide rails 33a, 33b below above-mentioned movable plate 32, to this linear motor 34 power supply is provided through the power cables (not shown) in the cable cover 35 that is disposed at crooked snake abdomen shape freely.In addition, in cable cover 35, dispose the control cable (not shown) that is used for through the action of control part 40 control linear motors 40.
That is, the illuminance transducer 31 on the movable plate 32 can move on the substrate width direction along guide rail 33a, 33b, and the test section in the illuminance transducer 31 is consistent with the height of real estate all the time at this moment.In other words, illuminance transducer 31 can be along shining the rayed position of substrate G from above-mentioned light source 4 and advancing and retreat in the substrate width direction.
In addition, in partial exposure device 1 during conveying substrate G,, make illuminance transducer 31 not interfere and do not keep out of the way the distolateral of guide rail 33a, 33b with substrate G by control part 40 control illuminance transducers 31.
The illuminance transducer 30 that use has a this structure is to obtain offering the current value of this light emitting control group GR (LED element L) and the relation between the luminous illumination for, the luminous illumination of measuring each light emitting control group GR.
In addition; About this partial exposure device 1; As shown in Figure 3, be provided with the substrate detecting sensor 39 of the assigned position (for example front end) that is used for detecting at substrate transport path 2 substrate conveying G at the upstream side of light irradiation unit 3, its detection signal is outputed to control part 40.Substrate G is transferred on substrate transport path 2 with fixing speed (for example 50mm/sec), so control part 40 can and obtain the transfer position that time and substrate transporting velocity after this detection signal are obtained substrate G according to above-mentioned detection signal.
In addition; Control part 40 has light emitting control program P in the posting field of regulation, this light emitting control program P is used for moment control in regulation and constitutes the brightness of each light emitting control group GR of light source 4, promptly offers the current value of each light emitting control group GR (UV-LED element L).
Preestablishing will needing illumination (offering the driving current value of light emitting control group GR), is used for confirming that assigned position to aforesaid substrate G carries out the information etc. of the light emitting control group GR of light emitting control, the parameter of the processing procedure program of use when carrying out as this light emitting control program P the irradiation of the assigned position of substrate G.
At this, use Fig. 6 to Fig. 8 that the preparatory process in the partial exposure device 1 is described.For according to each mask pattern decision related parameter (being called processing procedure) of exposure-processed that makes light transmission when the exposure-processed and implement this preparatory process.Specifically, implement this preparatory process in order to fill in each parameter among the processing procedure table T1 shown in Fig. 8.In addition, this processing procedure table T1 is stored in the control part 40.
In addition, the arbitrary substrate in two kinds of sampling substrates of use (being called sample objects 1,2) in this preparatory process.At first, sample objects 1 be after applying resist, implemented half make public and development treatment after be processed substrate.On the other hand, sample objects 2 is the substrates that are processed that formed wiring pattern through common photo-mask process (without the operation of partial exposure device 1).
As shown in Figure 6, under the situation of sample objects 1, make public and development treatment a plurality of are processed substrate sample (the step St1 of Fig. 6) to after applying resist, having implemented half.
Then, the resist residual-film thickness (the step St2 of Fig. 6) in the face of the substrate G that measuring samples obtains as schematically illustrated among Fig. 7, is confirmed to reduce the regulation zone AR (the step St5 of Fig. 4) of film according to a plurality of two-dimensional coordinate values (x, y).
On the other hand, as shown in Figure 6, under the situation of sample objects 2, through a plurality of the be processed substrates sample (the step St3 of Fig. 6) of common photo-mask process (without the operation of partial exposure device 1) to forming wiring pattern.
Then; Live width, the spacing between the pattern (the step St4 of Fig. 6) of the wiring pattern in the face of the substrate G that measuring samples obtains; As schematically illustrated among Fig. 7, confirm to reduce the regulation zone AR (the step St5 of Fig. 6) of film according to a plurality of two-dimensional coordinate values (x, y).
When confirming the regional AR of regulation; Shown in the processing procedure table T 1 of Fig. 8; Control part 40 is calculated the thickness that needs to reduce (for example, be 1000 ) (the step St6 of Fig. 6) for each coordinate figure among the AR of regulation zone under the situation of coordinate (x1, y1).And,, calculate the object illumination that is used to reduce thickness and will shines and (be 0.2mJ/cm under the situation of coordinate (x1, y1) according to these a plurality of conditions such as value and resist kind that reduce thickness 2) (the step St7 of Fig. 6).
In addition, shown in the processing procedure table T1 of Fig. 8, the definite respectively light emitting control group GR (the step St8 of Fig. 6) that can shine of control part 40 to each coordinate figure of stipulating regional AR.And, calculate the light emission drive current value (the step St9 of Fig. 6) that the irradiation area that is used to make each light emitting control group GR becomes object illumination.
Like this, obtain the processing procedure table T1 that whole parameters are set Fig. 8, thereby accomplish preparatory process (the step St10 of Fig. 6) along the flow process of Fig. 6.
Then, specify the calculation method of the light emission drive current value among the step St9 of above-mentioned Fig. 6.For calculating of this light emission drive current value, calculate the current value of having considered by the illumination (be called and interfere illumination) of the luminous interference light that causes of light emitting control group GR adjacent one another are.
Describe particularly, for example, make three adjacent light emitting control group GR M-1, GR m, GR M+1(m is positive integer, m＜n) respectively with under the luminous situation of illumination Q1, and shown in the chart of Fig. 9, the illumination of each light emitting control group GR is rendered as respectively parabola shaped illumination curve C1, C2, the C3 along the substrate width direction.
The illumination of these illumination curves C1, C2, its peak value of C3 is Q1, but the part and adjacent curves overlapped of end pendulum, and the therefore overlapping as a whole peak illumination that becomes is the curve C greater than the illumination Q2 of Q1.
That is, at each light emitting control group GR M-1, GR m, GR M+1Object illumination be under the situation of Q1; Even the controlling and driving electric current makes that each light emitting control group GR is luminous with illumination Q1; In fact also become greater than illumination Q1, so the light emission drive current of each light emitting control group GR need be considered the interference illumination from adjacent light emitting control group GR.
Therefore, control part 40 use the relational expression (1) of the relation (linearity (linearity)) between expression illumination Q and the drive current I, from the interference illumination Q of an adjacent light emitting control group GR I-1And the relational expression between the drive current I (2) and from the interference illumination Q of adjacent another light emitting control group GR I+1And the relational expression between the drive current I (3) calculates light emission drive current to each light emitting control group GR.
In addition, in formula (1)～(3), a, a I-1, a I+1Be the inclination coefficient, b, b I-1, b I+1Be intercept.In addition, in these relational expressions (1)～(3), preestablish each light emitting control group GR, be kept in the storage area of regulation of control part 40.
[formula 1]
Q＝a·I+b …(1)
Q i-1＝a i-1·I+b i-1 …(2)
Q i+1＝a i+1·I+b i+1 …(3)
Explain and use the light emission drive current that these relational expressions (1)～calculate (3).Figure 10 is three for example adjacent light emitting control group GR M-1, GR m, GR M+1Light emitting control group GR in (m is positive integer), central authorities mThe process flow diagram of the calculation procedure of the light emission drive current of (luminophor).
At first, to three light emitting control group GR M-1, GR m, GR M+1Difference target setting illumination Q M-1, Q m, Q M+1(the step Stp1 of Figure 10).
When target setting illumination, control part 40 from light emitting control group GR mAn adjacent light emitting control group GR M-1In relational expression (1) in calculate electric current I M-1, its value is updated to relational expression (2), (3) respectively to obtain respectively to interfere illumination Q M-1 (i-1), Q M+1 (i+1)(the step Stp2 of Figure 10).
In addition, control part 40 from light emitting control group GR mAdjacent another light emitting control group GR M+1In relational expression (1) in calculate electric current I M+1, its value is updated to relational expression (2), (3) respectively to obtain respectively to interfere illumination Q M+1 (i-1), Q M+1 (i+1)(the step Stp3 of Figure 10).
In addition, control part 40 uses for light emitting control group GR mInterference illumination Q M-1 (i+1), Q M+1 (i-1), through calculate the setting illumination Qr after the correction with following formula (4) m(the step Stp4 of Figure 10).
[formula 2]
Qr m＝Q m-Q m-1(i+1)-Q m+1(i-1) …(4)
In addition, control part 40 carries out the feasible illumination (Qr that interferes illumination that comprises of stipulated number (for example five times) repeatedly with the processing of above-mentioned steps Stp2～Stp4 m+ Q M-1 (i+1)+ Q M+1 (i-1)) be similar to object illumination Q gradually m(the step Stp5 of Figure 10).That is, carry out following operation repeatedly: obtain the setting illumination Qr that is based on after the correction of obtaining among the step Stp4 again m(step Stp2,3) is through from object illumination Q mDeduct the setting illumination Qr after this interference illumination is upgraded correction mProofread and correct the value of interfering illumination thus gradually and (set illumination Qr mValue), converge to setting.
Setting illumination Qr after obtaining correction like this mThe time, control part 40 is updated to above-mentioned relation formula (1) with its value, calculates light emitting control group GR thus mIn driving current value (being set to the current value of the processing procedure table T1 of Fig. 8) (the step Stp6 of Figure 10).
In addition, 40 pairs of needs of control part each light emitting control group GR of carrying out light emitting control carry out above-mentioned steps Stp1～Stp6 each handle (the step Stp7 of Figure 10).
In addition, in above-mentioned relation formula (1)～(3), predesignate each light emitting control group GR, be kept in the storage area of regulation of control part 40, still, specifically, following that kind is set.
When setting relational expression (1)～(3), need carry out illumination photometry to each light emitting control group GR, therefore, at first, each light emitting control group GR is confirmed illumination the highest (the becoming peak value) position of its luminous irradiation.
That is, as shown in Figure 9, form parabola shapedly by the luminous illumination curve that causes of each light emitting control group GR, even therefore in the irradiation area of same group of GR, illumination is also different.Therefore, control part 40 detections illumination in irradiation area becomes the position (illumination forms the position of peak value on the substrate width direction) of peak value, confirms to carry out the position of illumination photometry.
Describe along Figure 11 (process flow diagram); At first be set under the state of specified altitude at light source 4 (rayed window 6); Drive linear motor 34 according to control signal from control part 40; Shown in Figure 12 (a), the illuminance transducer 31 that is in position of readiness moves to rayed window 6 belows (the step Sp1 of Figure 11).In addition, Figure 12 (a) illustrates the light emitting control group GR that illuminance transducer 31 is positioned at the end (n=1) that is in light source 4 1Under state.At this, rayed window 6 is identical with the distance between rayed window 6 and the substrate G upper surface with distance between the illuminance transducer 31, therefore becomes the illumination that shines substrate G by illuminance transducer 31 detected illumination.
Then, light emitting control group GR only 1With the drive current luminous (the step Sp2 of Figure 11) of regulation, while illuminance transducer 31 carries out luminance detection at light emitting control group GR 1Irradiation area in scan (moving to the substrate width direction) (step Sp3 of Figure 11).
Then, the operation through this step Sp3 detects that the position of high illumination is confirmed as light emitting control group GR 1The peak illumination position, by the positions (the step Sp4 of Figure 11) of control part 40 storage illuminance transducer 31 on shifting axle.
Then, shown in Figure 12 (b), illuminance transducer 31 moves to light emitting control group GR 2Under, carry out the operation of above-mentioned steps Sp2～Sp4 and confirm light emitting control group GR 2The peak illumination position.
Thus, confirm whole light emitting control group GR successively 1～GR nPeak illumination position (the step Sp5 of Figure 11).
As stated, when confirming the peak illumination position of light emitting control group GR, each light emitting control group GR measurement is used to the illumination (being called linear measurement) of the relation between illumination Q and the drive current I of obtaining.Process flow diagram along Figure 13 (a), Figure 13 (b) is explained this linear measurement.
To light emitting control group GR mCarry out under the situation of linear measurement, at first, shown in Figure 14 (a), illuminance transducer 31 is disposed at light emitting control group GR mPeak illumination position (the step Se1 of Figure 13 (a)).
Then, carry out illumination photometry (the step Se2 of Figure 13 (a)) by illuminance transducer 31.Shown in the process flow diagram of Figure 13 (b), in the illumination photometry that is undertaken by this illuminance transducer 31, light emitting control group GR mLight emission drive current with the regulation ascensional range (for example, 0.5A, the step Sep4 of Figure 13 (b)) rise to maximum rated current (I=5, the step Sep3 of Figure 13 (b)) from minimum current (0A, the step Sep1 of Figure 13 (b)) step by step.
Illumination Q when in addition, illuminance transducer 31 measurements are shone with each electric current m(the step Sep2 of Figure 13 (b)).
Then, the light emission drive current collected according to expression of control part 40 and the data rows of the relation between the illumination are calculated the inclination coefficient a in the above-mentioned relation formula (1) mAnd intercept b m(the step Sep5 of Figure 13 (b)).
Then, shown in Figure 14 (b), illuminance transducer 31 moves to light emitting control group GR M+1Peak illumination position (the step Se3 of Figure 13 (a)).
Then, at light emitting control group GR mIn, light emission drive current rises to maximum rated current (I=5, the step Sep3 of Figure 13 (b)) from minimum current (0A, the step Sep1 of Figure 13 (b)) step by step with the ascensional range (for example, 0.5A, the step Sep4 of Figure 13 (b)) of regulation.
In addition, illuminance transducer 31 is at light emitting control group GR M+1The peak illumination position measure the interference illumination Q when shining with each electric current I+1(the step Sep2 of Figure 13 (b)).
Then, a is counted in the inclination of calculating in the above-mentioned relation formula (3) of the data rows of the light emission drive current collected according to expression of control part 40 and the relation between the illumination I+1And intercept b I+1(the step Sep5 of Figure 13 (b)).
Then, shown in Figure 14 (c), illuminance transducer 31 moves to light emitting control group GR M-1Peak illumination position (the step Se5 of Figure 13 (a)).
Then, at light emitting control group GR mIn, light emission drive current rises to maximum rated current (I=5, the step Sep3 of Figure 13 (b)) from minimum current (0A, the step Sep1 of Figure 13 (b)) step by step with the ascensional range (for example, 0.5A, the step Sep4 of Figure 13 (b)) of regulation.
In addition, illuminance transducer 31 is at light emitting control group GR M-1The peak illumination position measure the interference illumination Q when shining with each electric current I-1(the step Sep2 of Figure 13 (b)).
Then, a is counted in the inclination of calculating in the above-mentioned relation formula (2) of the data rows of the light emission drive current collected according to expression of control part 40 and the relation between the illumination I-1And intercept b I-1(the step Sep5 of Figure 13 (b)).
Like this, the processing of the step Se1～step Se6 of (a) through carrying out Figure 13, regulation and a light emitting control group GR mRelevant above-mentioned formula (1)～(3) are to whole light emitting control group GR 1～GR nCarry out the processing of above-mentioned steps Se1～step Se6, accomplish the linear measurement (the step Sep7 of Figure 13 (b)) that light source 4 is carried out thus.
In addition; The step Se1,2 of Figure 13 (a), step Se3,4 and step Se5,6 order be not limited to said sequence, also can replace measuring sequence and (for example, at first carry out step Se5,6; Then carry out step Se1,2, carry out step Se3,4 etc. at last).
Then, use Figure 15 to Figure 17 to further specify the action of the partial exposure that is undertaken by partial exposure device 1.
After processing in above-mentioned operation finished, substrate G carried in substrate transport path 2, and when being detected by substrate detecting sensor 39, its substrate detection signal is provided for control part 40 (the step S1 of Figure 15).
Control part 40 begins to obtain the transfer position (the step S2 of Figure 15) of (detection) substrate G according to aforesaid substrate detection signal and substrate transporting velocity.
Then, as Figure 16 is schematically illustrated, the moment (the step S3 of Figure 15) below the regulation zone process light irradiation unit 3 that will carry out partial exposure, 40 couples of light emitting control group GR that constitute light source 4 of control part 1～GR nCarry out light emitting control (the step S4 of Figure 15).
At this, for example carry out under the situation of luminous irradiation, being disposed at the light emitting control group GR of its top at regulation zone AR to substrate G N-1, GR N-2Carry out light emitting control.More particularly, the chart like Figure 17 (is directed against according to each light emitting control group GR N-1, GR N-2The size of transmitted beam (watt) of effluxion) shown in,, the drive current that is provided controlled make the size of transmitted beam W change through during below the light source at the regulation zone of substrate G AR.
Like this, the regulation zone AR that is not only substrate G simply shines, and still the irradiation of any illumination is carried out in the part in the regional AR.
In addition; In substrate G, exist under the situation in other zone that will carry out partial exposure (the step S5 of Figure 15); In this zone, light emitting control group GR is carried out light emitting control; In substrate G, do not exist under the situation in other zone that will carry out partial exposure (the step S5 of Figure 15), finish the partial exposure of this substrate G is handled.
In addition; As shown in Figure 4, except this partial exposure was handled (AE), ground matched with an exposure-processed (EXP) of carrying out in the perhaps back level of its prime; Completion is carried out development treatment by developing apparatus 56 (DEV) to this resist film after making public to the exposure-processed of substrate G.
As stated; According to embodiment involved in the present invention; Any part to the resist thickness that is formed at substrate G carries out in the processing of partial exposure; By a plurality of light emitting control group of the L shaped one-tenth of a plurality of UV-LED elements GR that goes up the configuration of wire ground in substrate width direction (Y direction), select light emitting control group GR to carry out light emitting control to substrate conveying G thereunder.
At this, the light emission drive current of selected light emitting control group GR is set at the value of having considered from the interference illumination of adjacent light emitting control group GR.
Therefore, can shine accurately making the thinner position arbitrarily of thickness, can after development treatment, be made as the thickness of expectation with predefined exposure (object illumination).
Thereby; Even for example in half exposure-processed, make under the situation with different thickness (thick film portion and film section) (promptly; Even the thickness that film section is such thin), also can make the resist thickness after the development treatment even, thereby can suppress the live width of wiring pattern and the deviation of spacing.
In addition, in the above-described embodiment, illustrate and append exposed areas and be made as the example in the effective coverage of real estate, but be not limited thereto carrying out the part.
For example, shown in figure 18, can also be used in the processing that regional (periphery of the effective coverage) E1 of the edge part of substrate G is made public.
In addition; In the above-described embodiment, the example that the light emitting control group that is made up of a plurality of UV-LED element L is made as light emitting control unit is shown, but is not limited thereto; Also can carry out meticulousr partial exposure with each UV-LED element L as light emitting control unit.
In addition; In the above-described embodiment; Situation substrate G advection conveying is on one side carried out exposure-processed on one side is that example is illustrated, and still, the present invention is not limited to this mode; Also can be made as following structure: keep being processed substrate in static state bottom chamber, the substrate that is kept is carried out exposure-processed.
In this case, also can make linear light source and move (that is, linear light source be processed the structure that substrate relatively moves in the opposite direction get final product) with respect to being processed substrate.
In addition, in the above-described embodiment, so that the uniform situation of the residual thickness of the resist after half exposure-processed is that example is illustrated, but partial exposure method involved in the present invention is not limited to half exposure-processed, can also be applied to common exposure-processed.For example, even under the situation of carrying out common exposure-processed rather than half exposure-processed, through the related partial exposure method of application invention, it is even that the residual thickness of resist is made as in the face.
In addition; The step St6, the St7 that kind residual thickness as required that are not limited to Fig. 6 are obtained the situation of the illumination that needs; Also can measure and obtain the related data between pattern line-width and the illumination, according to this related data making processing procedure table to the pattern line-width after the development treatment.
Then, other embodiment is described.The part identical with above-mentioned embodiment omitted explanation.Describe according to Figure 21, Figure 21 is the variation of Figure 10.To m light emitting control group GR 1, GR 2... GR mDifference target setting illumination Q 1, Q 2... Q m(the step Stp1 of Figure 21).Then, under the condition of the interference of light of ignoring adjacent light emitting control group, obtain light emitting control group GR respectively 1, GR 2... GR mLight emission drive current (the step Stp2 of Figure 21).
To whole light emitting control group GR 1, GR 2... GR mCarry out above processing (the step Stp3 of Figure 21).Then, calculate by light emitting control group GR 1The light emitting control group GR that produces 1Under illumination Q 1 (1)(the step Stp4 of Figure 21).Then, calculate by light emitting control group GR 2Produce to light emitting control group GR 1Interference illumination Q 1 (2)(the step Stp5 of Figure 21).Thereby, light emitting control group GR 1Under illumination be Q 1 (1)+ Q 1 (2)
Then, calculate by light emitting control group GR 1Produce to light emitting control group GR 2Interference illumination Q 2 (1)(the step Stp6 of Figure 21).Then, calculate by light emitting control group GR 2The light emitting control group GR that produces 2Under illumination Q 2 (2)(the step Stp7 of Figure 21).Then, calculate by light emitting control group GR 3Produce to light emitting control group GR 2Interference illumination Q 2 (3)(the step Stp8 of Figure 21).Thereby, light emitting control group GR 2Under illumination be Q 2 (1)+ Q 2 (2)+ Q 2 (3)
Equally, calculate by light emitting control group GR M-2Produce to light emitting control group GR M-1Interference illumination Q M-1 (m-2)(the step Stp9 of Figure 21).Then, calculate by (m-1) individual light emitting control group GR M-1The light emitting control group GR that produces M-1Under illumination Q M-1 (m-1)(the step Stp10 of Figure 21).Then, calculate by light emitting control group GR mProduce to light emitting control group GR M-1Interference illumination Q M-1 (m)(the step Stp11 of Figure 21).Thereby, light emitting control group GR M-1Under illumination be Q M-1 (m-2)+ Q M-1 (m-1)+ Q M-1 (m)
Then, calculate by (m-1) individual light emitting control group GR M-1Produce to light emitting control group GR mInterference illumination Q M (m-1)(the step Stp12 of Figure 21).Then, calculate by m light emitting control group GR mThe light emitting control group GR that produces mUnder illumination Q M (m)(the step Stp13 of Figure 21).Thereby, light emitting control group GR mUnder illumination be Q M (m-1)+ Q M (m)
Then, light emitting control group GR 1, GR 2... GR mCorrection after setting illumination Q R1, Q R2... Q Rm-1, Q RmBe respectively
Q r1＝Q 1(1)-Q 1(2)
Q r2＝Q 2(2)-Q 2(1)-Q 2(3)
…
…
Q rm-1＝Q m-1(m-1)-Q m-1(m-2)-Q m-1(m)
Q Rm=Q M (m)-Q M (m-1)(the step Stp14 of Figure 21).
Then, according to the setting illumination Q after proofreading and correct R1, Q R2... Q Rm-1, Q RmCalculate light emitting control group GR respectively 1, GR 2... GR mDriving current value (the step Stp15 of Figure 21).And, with step Stp4～step Stp15 number of times that puts rules into practice repeatedly, perhaps, at GR mCorrection after setting illumination Q Rm, from GR M-1Be shining into GR mIllumination and from GR M+1Be shining into GR mThe value that obtains of illumination addition become and set illumination Q M-aiMore than and Q M+aiBelow, be Q M-1-ai≤Q M-1+ Q M-1 (m)+ Q M-1 (m-2)≤Q M-1Before+the ai, step Stp4～step Stp15 is carried out repeatedly.Also can calculate light emitting control group GR respectively according to this order 1, GR 2... GR mDriving current value.
In addition, in the above-described embodiment, establishing as required, illumination decides light emission drive current and carries out the control of illumination.At this moment, the height of luminous illumination unit 3 is fixed, but can suitably adjust its height and position and make change.
For example, even light emission drive current, worries also that its illumination reduces owing to the deterioration year in year out of UV-LED element L for fixing.Therefore; Even in the result of illumination photometry is under the situation of the load that UV-LED element L the applied maximum current illumination that also can not get expecting; Light irradiation unit 3 is measured near substrate G once more; Under the situation of the illumination that consequently obtains expecting, its height and position is set to the height and position of light irradiation unit 3 again.

Claims (8)

1. partial exposure method; Substrate is carried out with horizontality horizontal direction substrate conveying transport path above; The luminophor that one or more light-emitting component in a plurality of light-emitting components that will be arranged by wire ground on the direction of intersecting with the substrate throughput direction constitutes optionally carries out light emitting drive as light emitting control unit; Through above-mentioned luminophor the light-sensitive surface on the aforesaid substrate that moves with respect to above-mentioned luminophor along the substrate throughput direction below the above-mentioned luminophor is implemented exposure-processed; This partial exposure method is characterised in that to possess following steps:
Object illumination calculation procedure:, obtain the object illumination that to shine according to its thickness to the regulation zone of the light-sensitive surface that on aforesaid substrate, forms;
Luminophor is confirmed step: at least one luminophor of confirming to shine the afore mentioned rules zone;
Set the illumination calculation procedure: to a determined luminophor; Other luminophor adjacent with this luminophor can shine under the situation in the afore mentioned rules zone; From above-mentioned object illumination, deduct illumination, and the value of being calculated is made as the setting illumination after the correction by the luminous interference light that causes of above-mentioned other luminophor; And
Driving current value is confirmed step: the above-mentioned setting illumination according to after proofreading and correct decides driving current value, makes an above-mentioned luminophor luminous according to this driving current value.
2. partial exposure method according to claim 1 is characterized in that,
Confirm in the step in above-mentioned driving current value,
Above-mentioned setting illumination after proofreading and correct is updated in the relational expression between illumination that under only making the luminous situation of an above-mentioned luminophor, in the irradiation area of this luminophor, measures and the driving current value that is applied to this luminophor, calculates above-mentioned driving current value thus.
3. partial exposure method according to claim 1 and 2 is characterized in that,
In above-mentioned setting illumination calculation procedure,
According to only making relational expression between illumination that in the irradiation area of an above-mentioned luminophor, measures under the luminous situation of above-mentioned other luminophor and the driving current value that is applied to above-mentioned other luminophor calculate illumination by the interference light of the luminous generation of other luminophor adjacent with an above-mentioned luminophor.
4. partial exposure method according to claim 1 and 2 is characterized in that,
May further comprise the steps in above-mentioned setting illumination calculation procedure:
First step is calculated the illumination by the interference light of the luminous generation of above-mentioned other luminophor according to the above-mentioned setting illumination after proofreading and correct;
Second step deducts the illumination of the interference light of in above-mentioned first step, calculating from above-mentioned object illumination, this value of being calculated is updated to the setting illumination after the new correction; And
Step is carried out stipulated number repeatedly with above-mentioned first step and above-mentioned second step repeatedly.
5. partial exposure device; Its constitute substrate is carried out with horizontality horizontal direction substrate conveying transport path above; The luminophor that one or more light-emitting component in a plurality of light-emitting components that will be arranged by wire ground on the direction of intersecting with the substrate throughput direction constitutes optionally carries out light emitting drive as light emitting control unit; Through above-mentioned luminophor the light-sensitive surface on the aforesaid substrate that moves with respect to above-mentioned luminophor along the substrate throughput direction below the above-mentioned luminophor is implemented exposure-processed; This partial exposure device is characterised in that to possess:
The object illumination computing unit, it obtains the object illumination that will shine to the regulation zone of the light-sensitive surface that on aforesaid substrate, forms according to its thickness;
Luminophor is confirmed the unit, and it confirms to shine at least one luminophor in afore mentioned rules zone;
Set the illumination computing unit; It is to a determined luminophor; Other luminophor adjacent with this luminophor can shine under the situation in the afore mentioned rules zone; From above-mentioned object illumination, deduct illumination, and the value of being calculated is made as the setting illumination after the correction by the luminous interference light that causes of above-mentioned other luminophor; And
Driving current value is confirmed the unit, and it decides driving current value according to the above-mentioned setting illumination after proofreading and correct, and makes an above-mentioned luminophor luminous according to this driving current value.
6. partial exposure device according to claim 5 is characterized in that,
Above-mentioned driving current value confirms that the above-mentioned setting illumination after the unit will be proofreaied and correct is updated in the relational expression between illumination that under only making the luminous situation of an above-mentioned luminophor, in the irradiation area of this luminophor, measures and the driving current value that is applied to this luminophor, calculates above-mentioned driving current value thus.
7. according to claim 5 or 6 described partial exposure devices, it is characterized in that,
Above-mentioned setting illumination computing unit is according to only making relational expression between illumination that in the irradiation area of an above-mentioned luminophor, measures under the luminous situation of above-mentioned other luminophor and the driving current value that is applied to above-mentioned other luminophor calculate the illumination by the interference light of the luminous generation of other luminophor adjacent with an above-mentioned luminophor.
8. according to claim 5 or 6 described partial exposure devices, it is characterized in that,
Above-mentioned setting illumination computing unit possesses:
First parts, it calculates the illumination by the interference light of the luminous generation of above-mentioned other luminophor according to the above-mentioned setting illumination after proofreading and correct;
Second parts, it deducts the illumination of the interference light of being calculated by above-mentioned first parts from above-mentioned object illumination, this value of being calculated is updated to the setting illumination after the new correction; And
Parts repeatedly, its action number of times that puts rules into practice repeatedly with above-mentioned first parts and above-mentioned second parts.
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CN114706281A (en) * 2022-05-18 2022-07-05 圆周率半导体(南通)有限公司 Method for improving exposure uniformity of PCB
CN114706281B (en) * 2022-05-18 2023-09-19 圆周率半导体(南通)有限公司 Method for improving exposure uniformity of PCB

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KR101711231B1 (en) 2017-02-28
TWI506380B (en) 2015-11-01

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