TWI704431B - Projection exposure device, projection exposure method, projection exposure control program, and exposure mask - Google Patents

Abstract

In the projection exposure device that uses the exposure mask to form the pattern, one While increasing the throughput, the mask pattern is transferred to the substrate with high precision.

When using a plurality of different arrangement numbers of the formed pattern The projection exposure device 10 of the exposure mask R of the exposure mask fields F1 to F4 determines the calculation area OA for the irradiation area CP formed on the substrate W, and selects the largest size when the positional error is less than the allowable error The exposure mask field.

Description

Projection exposure device, projection exposure method, projection exposure control program, and exposure mask

The present invention relates to a projection exposure apparatus that transfers a pattern formed on an exposure mask or the like to a substrate, and more particularly relates to an alignment (positional alignment) when overlapping patterns are transferred to the substrate .

Most of the components such as semiconductor elements, liquid crystal display elements, and packaging substrates manufactured using projection exposure equipment have a multilayer structure, and the patterns are superimposed and transferred to substrates such as wafers. Exposure is performed by arranging the same pattern on the substrate at a predetermined pitch. However, in order to increase the throughput, it is also possible to arrange a plurality of the same patterns on the mask and transfer to a plurality of patterns at the same time during one irradiation (one exposure) Irradiation area.

On the other hand, if the number of patterns transferred by an average of one irradiation is increased, an error is likely to occur in the transfer position of the pattern of the lower layer that has been transferred, and it is difficult to fall within the allowable overlap error range. Especially in the case of a FO-WLP (First Out-Wafer Level Package) substrate, there is a tendency for the position of the die to move randomly even if the substrate is not deformed. Therefore, based on the information of the transfer error, the pattern area to be exposed at the same time in one shot is determined, and the number of patterns to be transferred at the same time is appropriately changed according to the positioning accuracy.

Therefore, prepare to arrange multiple masks of the same pattern at a predetermined interval, and set up a light shield that can move and retract the light path of the illumination optical system board. When determining the number of patterns to be exposed in one shot in response to the alignment error, the light-shielding plate is moved to cover the pattern area that is not used during exposure (see Patent Documents 1 and 2).

【Prior Patent Literature】 【Patent Literature】

[Patent Document 1] JP 2003-188071 A

[Patent Document 2] JP 2010-243823 A

Because the light-shielding plate deviates from the focal position of the illumination optical system, when the edge of the light-shielding plate is projected on the substrate, this part becomes a gray area that is not completely shielded (exposure amount is not zero), and becomes exposed when the patterns are overlapped bad. In order to prevent this, the pattern interval must be enlarged, but it is difficult to enlarge the interval due to restrictions on pattern arrangement or design. In particular, in the case of an equal-magnification projection exposure device, because the width of the gray zone becomes wider in a general optical system, it is difficult to make the interval between the patterns formed on the substrate dense.

Therefore, there is a demand for a projection exposure device that can properly adjust the number of patterns exposed by one shot while maintaining alignment accuracy and throughput, and capable of exposing at close pattern intervals.

The projection exposure apparatus of the present invention includes: an exposure control section that transfers the mask pattern formed on the exposure mask based on a plurality of irradiation areas determined on the substrate; and an alignment adjustment section that is based on the plurality of irradiation areas , Detect the position of the alignment mark set on the substrate.

A plurality of exposure mask fields in which mask patterns are arranged in different numbers of patterns are formed on the exposure mask. In addition, in the exposure mask, the mask patterns are not arranged at a fixed distance interval, and the adjacent exposure mask fields are provided with a predetermined distance interval different from the mask pattern arrangement interval of each field. The distance between adjacent exposure mask fields is larger than the mask pattern interval of each field. However, the meaning of the exposure mask here is the same as the mask.

In the present invention, for the exposure mask that has formed such a characteristic exposure mask field, the alignment adjustment section selects the exposure mask field based on the detected alignment mark position, and the exposure control section transfers The mask pattern of the selected exposure mask field. Instead of selecting the mask pattern area used in the shading part, etc., it selects any one of the mask pattern arrays that are pre-blocked and divided into a predetermined number, thereby, the dense pattern formation is also exposed Defects are suppressed. In particular, it is also possible to make a device such as an equal-magnification projection exposure device for which it is difficult to use a light-shielding plate to realize the exposure of close pattern intervals while maintaining alignment accuracy.

The alignment adjustment unit can calculate the position alignment error amount when the predetermined exposure mask field is used for the determined calculation area, and then select the exposure mask field according to the position alignment error amount. For example, as long as the amount of positioning error does not exceed the predetermined positioning accuracy, that is, the exposure mask field for the allowable amount of error. In consideration of shortening the processing time, the alignment adjustment unit may select the exposure mask field with the largest pattern arrangement number among the exposure mask fields that satisfy the predetermined positioning accuracy.

The error characteristics of the irradiation arrangement are likely to have the same tendency in each batch. Therefore, the alignment adjustment unit detects the position of the predetermined alignment mark in the first measurement system after the batch update, and detects the position of the predetermined alignment mark in the second and subsequent measurement systems. The position of a part of the alignment mark in the determined calculation area is sufficient.

The alignment adjustment part can select the alignment calculation method according to the selected exposure mask field. For example, it is only necessary to select an alignment method (for example, a split whole-piece method, a grain-by-grain alignment method, etc.) that does not exceed a predetermined value and the processing time is shorter.

Considering that the irradiation arrangement is a matrix, the exposure mask field may be formed in such a way that the ratio of the pattern arrangement number to the plurality of exposure mask fields is expressed by the power of 2. Thereby, the exposure mask field can be effectively and selectively buried in the entire irradiation array.

Another aspect of the projection exposure method of the present invention is to transfer the mask pattern formed on the exposure mask based on a plurality of irradiation areas determined on the substrate, and then detect the alignment of the substrate on the basis of the plurality of irradiation areas The projection exposure method for the position of the mark provides an exposure mask with a plurality of exposure mask fields arranged in different numbers of mask patterns; the exposure mask is selected according to the detected alignment mark position Mask field: transfer the mask pattern of the selected exposure mask field.

The program of another form of the present invention makes the projection exposure device act as the following means: the exposure control means has a plurality of exposure mask fields in which the mask patterns are arranged in different patterns, and according to The multiple irradiation areas determined by the substrate transfer the mask pattern formed on the exposure mask; the alignment adjustment means detects the position of the alignment marks provided on the substrate based on the multiple irradiation areas; and The adjustment means is to select the exposure mask field according to the detected alignment mark position; the exposure control means is used to transfer the mask pattern of the selected exposure mask field.

According to the present invention, in the projection exposure device, the throughput can be increased, and the mask pattern can be transferred to the substrate with high precision.

10: Projection exposure device

38: Image Processing Department

40: workbench

42: Workbench Drive

50: Control Department

W: substrate

AM: alignment mark

R: Exposure mask

Fig. 1 is a schematic block diagram of the projection exposure apparatus of this embodiment.

FIG. 2 is a diagram showing the irradiation array formed on the substrate W. FIG.

FIG. 3 is a diagram of the deformation of the irradiation arrangement caused by the deformation of the substrate W and the like.

Fig. 4 is a plan view showing the exposure mask R.

Figure 5 is a diagram showing the calculation area set on the substrate.

Figure 6 is a diagram showing the selected exposure mask field.

Figure 7 is a diagram showing the selection process of exposure mask fields F1 to F4 used in exposure.

Figure 8 is a flow chart of the exposure operation for alignment adjustment.

In the following, the embodiments of the present invention will be described with reference to the drawings.

Fig. 1 is a schematic block diagram of the projection exposure apparatus of this embodiment. In the following description, it is assumed that the pattern of the first layer is formed on the substrate, and after the second layer, an exposure process is performed to overlap the mask pattern on the substrate.

The projection exposure device 10 is an exposure device that transfers the mask pattern formed on the exposure mask R as the mask to the substrate (work substrate) W according to the step and repeat method, and includes a light source 20 such as a discharge bulb , And projection optical system 34. The exposure mask R is made of quartz material or the like, and forms a mask pattern with a light-shielding area. The substrate W is where silicon, ceramic, glass or A resin-made substrate (for example, a relay element substrate), etc.

The illumination light emitted from the light source 20 enters the integrator 24 via the reflector 22, and the amount of illumination light becomes uniform. The uniform illumination light is incident on the collimator lens 28 through the reflector 26. Thereby, parallel light enters the exposure mask R. The light source 20 is driven and controlled by the bulb drive unit 21.

In the exposure mask R, the mask pattern is formed in a plurality of fields, and the exposure mask R is placed on the exposure mask table so that the mask pattern is located at the focal position on the light source side of the projection optical system 34 30. An aperture (not shown) is provided on the light source side of the exposure mask R so as to irradiate light to only one field.

For the worktable 30 on which the exposure mask R has been mounted and the worktable 40 on which the substrate W has been mounted, a three-axis coordinate system of X-Y-Z orthogonal to each other is specified. The table 30 is movable in the X-Y direction so that the exposure mask R moves along the focal plane, and is driven by the table driving unit 32. In addition, the table 30 can also be rotated on the X-Y coordinate plane. The position coordinates of the working table 30 are measured here by a laser interferometer or a linear encoder (not shown).

The light system of the field (area) of the exposure mask that has passed through the exposure mask R is projected onto the substrate W as pattern light by the projection optical system 34. The substrate W is mounted on the substrate table 40 such that the exposure surface thereof coincides with the image side focal position of the projection optical system 34.

The table 40 is movable in the X-Y direction so that the substrate W moves along the focal plane, and is driven by the table driving unit 42. In addition, the table 40 can be moved in the Z-axis direction (the optical axis direction of the projection optical system 34) perpendicular to the focal plane (X-Y direction), and can also be rotated on the X-Y coordinate plane. Workbench 40 The position coordinates are not shown as measured by laser interferometer or linear encoder.

The control unit 50 controls the stage drive units 32 and 42 to position the exposure mask R and the substrate W, and also controls the bulb drive unit 21. Moreover, it executes the exposure action according to the step & repeat method. The memory (not shown) provided in the control unit 50 stores the mask pattern position coordinates of the exposure mask R, the position coordinates formed on the design of the irradiation area of the substrate W, the step movement amount, and the like.

The alignment mark imaging unit 36 is a camera or a microscope that photographs the alignment marks formed on the substrate W, and photographs the alignment marks before irradiation exposure. The image processing unit 38 detects the position coordinates of the alignment mark based on the image signal sent from the alignment mark imaging unit 36.

The control unit 50 gradually transfers the mask pattern of the exposure mask R to each irradiation area formed on the substrate W according to the step and repeat method. That is, when the control unit 50 moves the stage 40 intermittently according to the interval of the irradiation area and positions the irradiation area as the exposure target at the projection position of the mask pattern, the light source 20 is driven to project the pattern light on the irradiation area.

Before the transfer of the mask pattern, the control unit 50 detects the alignment error of the irradiation area, that is, the position alignment according to the whole-sheet alignment (hereinafter, GA) method or the grain-by-grain (hereinafter, D/D) method. Error, and align the position of the irradiation area of the substrate W and the projection area of the mask pattern.

FIG. 2 is a diagram showing the irradiation array formed on the substrate W. FIG. FIG. 3 is a diagram of the deformation of the irradiation arrangement caused by the deformation of the substrate W and the like.

As shown in FIG. 2, a lower layer pattern is formed on the substrate W, and the lower layer pattern is arranged in an array at a fixed interval to align the wafers CP on a grid defined by the X-Y coordinate system. The CP of each wafer corresponds to the irradiation area and will form The mask pattern of the exposure mask R is formed by overlapping the chip CP (hereinafter also referred to as the irradiation area). Further, along the arrangement of the shot areas CP, alignment marks AM for positioning are formed in pairs at arbitrary positions within each shot area (at the center of the left and right ends in the second drawing). In FIG. 2, a 7×7 irradiation area CP is formed on a substrate W such as a wafer.

In the case of projection exposure, by arranging a plurality of mask patterns on the exposure mask R, it is possible to expose a plurality of mask patterns in one shot. In order to increase production, it is better to make the number of patterns as much as possible. On the other hand, when the pattern is overlapped with the shot region CP, from the viewpoint of positioning accuracy, it is better to perform one shot exposure with as few patterns as possible.

FIG. 3 shows a state where the arrangement of the irradiation areas CP is out of order due to the deformation of the substrate W. Here, the deformation of the irradiation arrangement is drawn exaggeratedly, but when the substrate W is a printed circuit board or a relay element substrate, the deformation of the substrate W is large, and the degree of the deformation varies depending on the substrate location. In addition, in FO-WLP substrates, etc., random irradiation arrangement errors caused by wafer assembly accuracy occur.

In the present embodiment, a plurality of exposure mask fields with different array numbers of mask patterns are formed on the exposure mask R, and the number of patterns during one exposure exposure is changed according to the position of the substrate W, especially when satisfying Select the exposure mask field with the largest number of patterns for the range of allowable alignment accuracy. The following is an explanation.

Fig. 4 is a plan view showing the exposure mask R.

In the exposure mask R, four exposure mask fields F1 to F4 are provided in the exposure mask body RB as the light shielding portion, and the same mask pattern MP is formed such that the number of pattern arrangements is different. The pattern arrangement numbers of exposure mask fields F1, F2, F3, F4 are 1 (=20), 4 (=22), 8 (=23), 16 (=24), respectively. but, Here, even if there is one mask pattern, it is included as the number of permutations. Here, the combination of the arrangement number of the exposure mask field is arbitrary, and is not limited to this combination.

The irradiation area of the illumination light irradiated to the exposure mask R corresponds to the size of the exposure mask field F4. Furthermore, in the case of irradiating a specific exposure mask field, in order to prevent illumination light from entering other exposure mask fields, the exposure mask fields F1 to F4 are formed with a distance between the fields. The distance interval between adjacent exposure mask fields is determined to be much larger than the mask pattern interval of each field, and larger than the width of the gray area generated by the above-mentioned aperture.

The mask pattern MP and its arrangement interval correspond to the arrangement interval of the irradiation area CP of the substrate W. Therefore, as shown in Figure 2, in the case of the ideal (theoretically) arrangement of the irradiation area without deformation of the substrate W, since the irradiation area has no arrangement error, if the exposure light with the largest number of pattern arrangements is used The pattern transfer in the mask field F4 can minimize the number of exposures to the entire substrate W.

However, in the case of a substrate W with a complicated deformation as shown in Fig. 3, if the pattern transfer is performed using the exposure mask field F4 with the largest pattern arrangement number, the allowable overlap accuracy may be exceeded, and Overlap the mask pattern.

Therefore, the entire exposure target area of the substrate W is divided into a plurality of areas (hereinafter referred to as arithmetic areas), and the alignment error amount is calculated for each arithmetic area, and then the exposure mask that satisfies the allowable alignment accuracy Among the fields, the number of selected patterns becomes the largest exposure mask field.

Figure 5 is a diagram showing the calculation area set on the substrate. Figure 6 is a diagram showing the selected exposure mask field. However, in Fig. 5, unlike Figs. 2 and 3, it is an 8×8 irradiation area arrangement. In addition, here, in order to facilitate the description, in the exposure mask R, only the exposure mask fields F1 and F2 As a selection object.

Since either of the exposure mask fields F1 and F2 is selected, as the calculation area OA, a 2×2 irradiation area CP corresponding to the pattern arrangement number of the exposure mask field F2 is defined. Since a pair of alignment marks AM is provided in each shot area CP, 8 alignment marks AM are included in the calculation area OA.

A calculation area OA of 4×4 (=16) is defined on the substrate W, and the positioning error is obtained for each calculation area OA. Here, the difference between the theoretically (designed) alignment mark position coordinates and the actually measured alignment mark position coordinates is calculated for each of the eight alignment marks AM, and the standard deviation is calculated as the position alignment error.

In addition, the shot regions CP formed at the four corners of the substrate W are not targeted for the calculation of the positioning error amount. In addition, instead of the standard deviation, the total error, the average value, etc. may be calculated as the amount of positioning error.

The position alignment error amount obtained for the predetermined operation area OA is compared with the allowable error amount. The allowable error amount indicates the maximum error amount of the allowable error amount, and is determined in accordance with the required pattern accuracy, the nature of the substrate W, and the like. When the obtained positioning error amount is less than the allowable error amount, an exposure operation is performed on the calculation area OA using the exposure mask field F2.

On the other hand, when the calculated positioning error amount is greater than the allowable error amount, the exposure operation is performed using the exposure mask field F1 provided with only one mask pattern. In Fig. 6, for the hatched calculation area OA, the exposure mask field F2 is selected, and for the other calculation areas OA, the exposure mask field F1 is selected.

Select one of the exposure mask fields F1 and F2 for each operation area OA In either case, the exposure operation is performed in each of the exposure mask field F1 and the exposure mask field F2. For example, first, the exposure operation is sequentially performed on the calculation area OA of the selected exposure mask field F2, and then the exposure operation is performed on the calculation area OA of the selected exposure mask field F1.

In Figs. 5 and 6, the exposure procedure is described in the case where only the exposure mask fields F1 and F2 are used, but in fact, the exposure operation is performed using the exposure mask fields F1 to F4 shown in Fig. 2. Hereinafter, it will be explained using Fig. 7.

Figure 7 is a diagram showing the selection process of exposure mask fields F1 to F4 used in exposure.

As in FIGS. 5 and 6, it is assumed that an 8×8 irradiation area CP is formed on the substrate W. Here, since the fields are selected in the order of the exposure mask fields F4, F3, F2, F1, the calculation area OA is also gradually changed in size in accordance with this. First, for the overall irradiation arrangement (total arrangement) SA, the calculation area OA1 corresponding to the pattern arrangement number of the exposure mask field F4 is determined. That is, initially, the calculation area OA1 constituted by the 4×4 (=16) irradiation area CP is defined.

Next, the amount of positional alignment error of the alignment mark is calculated for each of the four predetermined calculation areas OA1. The exposure mask field F4 is selected for the calculation area OA1 whose positional error amount is less than the predetermined allowable error amount. On the other hand, when the amount of positioning error exceeds the allowable amount of error, the calculation area is newly specified. Since the selection judgment of the exposure mask field F3 is performed, the calculation area OA2 constituted by the 2×4 (=8) irradiation area CP is defined as the target not to select the exposure mask field F4.

Calculate the amount of alignment error for each operation area OA2 (4 in Fig. 7) that is the target of field selection, and determine whether the exposure mask can be selected Field F3. When the amount of positioning error is less than the allowable amount of error, the exposure mask field F3 is selected. On the other hand, when the amount of positioning error exceeds the allowable amount of error, the calculation area OA3 composed of 2×2 (=4) irradiation areas CP is newly defined for the remaining area.

The positional alignment error amount is calculated for each calculation area OA3, and when it is less than the allowable error, the exposure mask field F2 is selected. When the amount of positioning error exceeds the allowable error, the exposure mask field F1 is selected for the remaining area.

By setting the exposure mask field and the area to be exposed in the exposure mask field in the order of the large-sized exposure mask field in this way, the number of step exposures for the total array SA can be kept to a minimum.

On the other hand, as described above, the correction value is calculated based on the detected positional alignment error, and the table 40 is driven and controlled to adjust the alignment, that is, adjust the overlapping position of the pattern. Specifically, the offset value and the correction value of the rotation amount are calculated from the amount of positioning error. Then, according to the X-Y coordinate system, the table 40 is moved to adjust the position of the substrate W.

Here, the calculation method of the correction value is different depending on the GA method and the D/D method (However, here, the calculation area OA becomes the calculation target area).

In the GA method, at least three alignment marks AM located on a non-linear line are arbitrarily extracted from the target operation area OA, and then the statistical correction value obtained from the measured position of the alignment mark AM is performed. Quasi-adjustment. When performing alignment adjustment once, the same correction value is used to perform step exposure on the substrate W between exposure of one operation area OA.

On the other hand, in the D/D method, the Extract 2 alignment marks AM from each area, and calculate the correction value. This correction value is calculated for each calculation area OA, and the substrate W is step-exposed using each correction value.

In this embodiment, simultaneously with the selection of the exposure mask field, the alignment method is selected for the exposure target area (that is, the calculation area OA) using the exposure mask field. Specifically, it predicts the amount of alignment error for each shot, and adopts an alignment method in which the processing time is shorter in a range where the amount of alignment error does not exceed a predetermined value.

For example, the GA method can be used for the calculation area of the exposure mask field F4 used when the irradiation arrangement is close to the design value, and the exposure mask field F2 used when the irradiation arrangement is relatively random The calculation area of, can adopt D/D method. In addition, it is also possible to use the D/D method for the calculation area with a large degree of deformation, that is, a large amount of position alignment error, and use the GA method for the calculation area with a small amount of error. In addition, alignment methods other than GA or D/D methods may also be used.

Figure 8 is a flow chart of the exposure operation for alignment adjustment.

When the substrate to be exposed is the first sheet of the production lot, the positions of all the alignment marks are measured (S101, S102). On the other hand, in the case of the second and subsequent pieces of the production lot, the position of the alignment mark is measured with the minimum required number of the calculation area obtained for the first piece of the production lot (S101, S103). After the first and second sheets of the production batch, the deformation characteristics of the substrate are regarded as having the same characteristics, and the number of measured alignment marks can be reduced, and the same amount of position alignment error can also be calculated.

In steps S104 and S105, in the determined operation area position Select the exposure mask field with the largest size (maximum number of pattern arrangements) among the exposure mask fields whose alignment error amount is less than the allowable error amount, and select the alignment method. Then, according to the selected alignment method, the correction value is calculated (S106, S107, S108).

According to the correction value, the alignment adjustment of the substrate W is performed, and the table 30 is moved to transfer the selected exposure mask field by the table 30. At the same time, the position of the substrate W is moved, and the target exposure area is stepped and repeatedly exposed. It is performed in the order of the large-size exposure mask field (S109). However, it is also possible to initially select the exposure mask field used at the end of the last step & repeat exposure for exposure.

In this way, according to the present embodiment, in the projection exposure apparatus 10 using a plurality of exposure mask fields F1 to F4 of which the number of the pattern arrangement is different, the exposure mask R formed on the substrate W The irradiation area CP determines the calculation area OA, and the maximum size of the exposure mask field is selected according to the positional error amount below the allowable error amount.

According to this structure, regardless of the optical elements such as the aperture, one irradiation exposure can be performed with a better pattern arrangement number, while suppressing the reduction in throughput, the exposure can be performed at close pattern intervals, and the pattern position can be improved. Accuracy. In particular, by setting the number of pattern arrangements according to the ratio of the power of 2, the exposure mask field can be selected without gaps for the entire substrate.

In addition, by changing the measurement method of the alignment mark after the first and second sheets of the batch, the overall productivity of the batch can be improved. Furthermore, the alignment adjustment can be performed according to the alignment method suitable for each part of the substrate.

In addition, as long as the alignment marks are holes, patterns, characters, and scribe lines Such as features that can be identified by image processing. The mask system is not limited to one sheet, and a plurality of exposure masks may be prepared, and one or a plurality of exposure mask fields may be formed in each exposure mask. In this case, positioning control is performed on a plurality of exposure masks.

MP: mask pattern

F1, F2, F3, F4: mask field for exposure

R: Exposure mask

RB: Exposure mask body

Claims (9)

A projection exposure device is characterized by comprising: an exposure control part which transfers the mask pattern formed on the exposure mask according to a plurality of irradiation areas determined on a substrate; and an alignment adjustment part which is based on the plural In the irradiation area, the position of the alignment mark provided on the substrate is detected; the exposure mask has a plurality of exposure mask fields in which the mask patterns are arranged in different patterns; the alignment adjustment part is based on The detected alignment mark position is used to select the exposure mask field; the exposure control section transfers the mask pattern of the selected exposure mask field. For example, the projection exposure device of the first item in the scope of patent application, wherein the alignment adjustment section calculates the position alignment error amount when the predetermined exposure mask field is used for the determined operation area, and then corresponds to the position alignment error amount, Select the mask field for exposure. For example, the projection exposure device of the second item of the scope of patent application, wherein the alignment adjustment section selects the exposure mask field with the largest pattern arrangement number among the exposure mask fields that meet the predetermined positioning accuracy . For example, the projection exposure device of any one of items 1 to 3 in the scope of patent application, wherein the alignment adjustment part detects the position of the predetermined alignment mark in the initial measurement system after the batch update, and the second and subsequent measurements It detects the position of a part of the alignment mark in the determined calculation area. Such as the projection exposure device of any one of items 1 to 3 in the scope of the patent application, wherein the alignment adjustment part selects the alignment according to the selected exposure mask field Operation method. For example, the projection exposure device of any one of items 1 to 3 in the scope of the patent application, wherein the power of 2 represents the ratio of the pattern arrangement number of the plurality of exposure mask fields. A projection exposure method that transfers a mask pattern that has been formed on the exposure mask based on a plurality of illuminated areas determined on a substrate, and then detects the position of an alignment mark provided on the substrate based on the plurality of illuminated areas. The feature is: to provide an exposure mask with a plurality of exposure mask fields arranged in different numbers of mask patterns; to select the exposure mask field according to the detected alignment mark position; Print the mask pattern of the selected exposure mask field. A projection exposure control program, which is characterized in that the projection exposure device is made to act as the following means: the exposure control means has a plurality of exposure mask fields in which mask patterns are arranged in different patterns, and are The mask pattern formed on the exposure mask is transferred to a plurality of irradiation areas determined by the substrate; the alignment adjustment means detects the positions of the alignment marks provided on the substrate based on the plurality of irradiation areas; and The alignment adjustment means selects the exposure mask field according to the detected alignment mark position; the exposure control means is used to transfer the mask pattern of the selected exposure mask field. A photomask for exposure, which is characterized by: There are a plurality of exposure mask fields in which the mask patterns are arranged with different pattern arrangement numbers; the distance between adjacent exposure mask fields is more than that produced by the aperture of the illumination optical system provided in the exposure device The width of the gray area is greater.

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