KR20160026683A - Projection exposure apparatus, projection exposure method, photomask for the projection exposure apparatus, and the method for manufacturing substrate - Google Patents

Abstract

Thep present invention relates to a projection exposure apparatus, a projection exposure method, a photomask for the projection exposure apparatus, and a method for producing a substrate. In the projection exposure apparatus, a mask pattern is transferred on a shot region of the substrate with high precision. To this end, the mask pattern corresponding to the distortion of the shot regions is formed on a reticle, and the mask pattern is transferred onto the substrate on which the shot regions are formed according to a step-and-repeat method. A location coordinate for an alignment mark sample is measured based on a global alignment method, and conformational errors of the shot regions are detected from the conformational errors of the global alignment regions. In addition, selected is the mask pattern having a field conformation which shows the same transformed state and corresponds to the conformational errors.

Description

TECHNICAL FIELD [0001] The present invention relates to a projection exposure apparatus, a projection exposure method, a photomask for a projection exposure apparatus, and a method of manufacturing a substrate,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for transferring a pattern formed on a photomask such as a reticle onto a substrate and more particularly to alignment with a deformed substrate.

A large number of devices such as semiconductor devices, liquid crystal display devices, and package substrates, which are manufactured using a projection exposure apparatus, have a multilayer structure, and the substrate is manufactured by repeatedly transferring the pattern. In the case of transferring the pattern of two or more layers onto the substrate, it is necessary to precisely align the shot region previously formed on the substrate with the pattern image on the mask, that is, to align the photomask with the substrate.

As a positioning method, a global alignment (GA) method is known. There, a plurality of shot regions are defined along the grid on the substrate, and alignment marks are formed on the grid to define each shot region. Then, a global alignment area including a plurality of shot areas is defined, and position coordinates of sample alignment marks for defining the area are detected.

When transferring the pattern of the second layer and thereafter, there arises an alignment error between the shots due to the misalignment of the positioning accuracy of the stage, the contraction of the substrate, and the like. Here, the alignment error between the shots is calculated from the difference between the position coordinate of the alignment mark for the sample and the position coordinate of the sample alignment mark on the design, and the alignment is performed by offset correction, scaling correction or the like , See Patent Document 1). On the other hand, in the scaling correction corresponding to the expansion and contraction of the substrate, the projected image of the mask pattern can be enlarged / reduced by adjusting the position of the variable lens of the projection optical system (see Patent Document 2).

The deformation of the substrate is not limited to linear expansion and contraction along the coordinate axes but also various expansion and contraction in other directions in the diagonal direction and may be deformed into a diamond shape or a trapezoid shape. This modification is difficult to correct with scaling correction. There is known a method in which a plate deformed like a work substrate is provided on an optical path between a mask substrate and a work substrate, and a mask pattern image corresponding to the deformation is transferred (see Patent Document 3).

Japanese Unexamined Patent Application Publication No. 2006-269562 Japanese Patent Application Laid-Open No. 2004-29546 Japanese Unexamined Patent Application Publication No. 2011-248260

The deformed state of the substrate is not uniform, and various distortions occur on the substrate. Particularly, in the case of a substrate made of ceramics or resin, the substrate deforms with complicated distortion. If the shape of the shot region is actually different from the design defined by the design due to such a substrate skew or device characteristics, it can not be coped with scaling correction based on expansion and contraction along the coordinate axis direction.

A projection exposure apparatus is an exposure apparatus used for forming a pattern with high precision and high resolution, and a silicon wafer is used for a considerable number of substrates in accordance with the use of a semiconductor chip or the like. In the case of a silicon wafer, the deformation of the shot region on the material does not appear remarkably.

However, it is also necessary to use a projection exposure apparatus in order to form a high-resolution pattern on a substrate (for example, an interposer substrate) formed by ceramics or resin. In this case, complicated deformation of the shot area itself can not be coped with even if alignment is performed to correct the array error of the shot area by the GA method. As a result, there is a possibility that a difference in the position of the through holes occurs between the respective layers, and the overlapping accuracy of the patterns deteriorates.

Therefore, it is also required to perform alignment of various shot regions with high precision.

The projection exposure apparatus of the present invention is a projection exposure apparatus for transferring (reducing, equalizing, etc.) a mask pattern onto a substrate in accordance with a step-and-repeat method. The projection exposure apparatus includes a plurality of shot regions and a plurality of shot regions A scanning section for intermittently moving relative to the projection area of the mask pattern formed on the photomask, the substrate on which the plurality of alignment marks to be installed are formed; and a scanning section for transferring the mask pattern onto the plurality of shot areas And an exposure control unit.

The projection exposure apparatus further includes a shape error measuring section for measuring a two-dimensional shape error of a predetermined shot area with reference to the designed shot area from the positions of the plurality of alignment marks. The shape of the shot area and the area position actually measured due to the deformation of the substrate or the like are shifted from the shape of the shot area (for example, a rectangular shape) and the area position of the reference design, And detects it.

Here, the " two-dimensional shape error " indicates deformation of the shot area due to the deformation and fluctuation of the shot area with respect to the direction different from the coordinate axis defined on the substrate. For example, (Enlargement, reduction) according to the axis (the axis). When the shot area of the design is a rectangle, it is different from the design when deforming into a non-rectangular shape such as a diamond shape, a parallelogram shape, a trapezoid shape, a barrel shape, a yarn shape, , The difference between the position of the entire area such as the rotation difference and the position of the area on the design is also included in the two-dimensional shape error. The two-dimensional shape error of the shot area is caused by distortion along the direction different from the coordinate axis of the substrate, the characteristics of the apparatus, and the like.

According to the present invention, in the photomask, a plurality of mask patterns corresponding to a plurality of shot regions each having a two-dimensional shape error different from the design shot area are provided. Here, the "shape error is different" means, for example, a case in which the deformed shape types of the shot region are different, such as a parallelogram or a trapezoid, and the like, or a difference in the degree of orthogonality, And also includes the difference in the amount of variation in the positional variation of the shot area.

Then, the exposure control unit selects a mask pattern corresponding to the measured shape error among the plurality of mask patterns, and transfers the mask pattern. For example, a mask pattern having a field in which the shape of the modified shot region is the same, a mask pattern having a field having a similar amount of deformation such as a deviation in orthogonality, and a mask pattern having a field in which the variation position of the shot region is the same are selected , It is possible to select a mask pattern in which the type of area deformation, the deformation amount, and the area variation amount tend to be the same with respect to the shape error.

For example, when a plurality of alignment marks include an alignment mark for a sample defining a global alignment area constituted by a predetermined number of shot areas, the exposure control section controls the exposure control section such that the shape of the global alignment An error can be measured and a mask pattern corresponding to the shape error can be selected. When the alignment mark for the sample is provided in accordance with the plurality of global alignment areas defined on the substrate, the exposure control unit can measure the shape error for each global alignment area. Further, the exposure control section calculates the shot area alignment error in the global alignment based on the position of the alignment mark for the sample, and based on the position of the alignment mark defining the shot area in the global alignment area, It is possible to measure.

According to another aspect of the present invention, there is provided a projection exposure method for aligning a plurality of shot areas arranged two-dimensionally and a plurality of alignment marks provided in accordance with the arrangement of a plurality of shot areas, The shape error of the deformed shot area with reference to the shot area in the design is measured and intermittently moved relative to the projection area of the mask pattern formed on the photomask so that the mask pattern is divided into a plurality of shots And the photomask has a plurality of mask patterns corresponding to a plurality of deformed shot regions having different shape errors, and selects a mask pattern corresponding to the measured shape error from among the plurality of mask patterns And transferring the mask pattern.

A photomask for projection exposure apparatus in another aspect of the present invention is a photomask used in a projection exposure apparatus (such as reduction, equalization, etc.) for transferring a mask pattern onto a substrate in accordance with a step-and-repeat method, A substrate can be manufactured.

For example, in a projection exposure apparatus, a substrate on which a plurality of two-dimensionally arranged shot regions and a plurality of alignment marks provided in accordance with an array of a plurality of shot regions are formed is intermittently And an exposure control unit for transferring the mask pattern to a plurality of shot areas in accordance with the step & repeat method.

In the photomask of the present invention, a plurality of mask patterns are provided, and the plurality of mask patterns correspond to a plurality of shot areas having different two-dimensional shape errors with reference to the designed shot area.

By using such a photomask in a projection exposure apparatus, a mask pattern having a field (area) corresponding to a two-dimensional shape error of a shot area measured among a plurality of mask patterns is selected, It is possible to superimpose them without deviating from the area. For example, a mask pattern having a field in which the shape of the modified shot region is the same, a mask pattern having a field having a similar amount of deformation such as a deviation in orthogonality, and a mask pattern having a field in which the variation position of the shot region is the same are selected , It is possible to select a mask pattern in which the type of area deformation, the deformation amount, and the area variation amount tend to be the same with respect to the shape error.

For example, the plurality of mask patterns have one field shape of a parallelogram, diamond, trapezoid, barrel, and yarn type. Considering that the shot area is not substantially deformed and the shape of the shot area in design is the same, it is preferable to provide a mask pattern having the same field as the shape of the shot area in the design in the photomask.

According to the present invention, in the projection exposure apparatus, the mask pattern can be precisely transferred to the shot region of the substrate with high precision.

1 is a schematic block diagram of a projection exposure apparatus according to a first embodiment.
FIG. 2 is a view showing a substrate on which shot areas are arranged. FIG.
3 is a view showing a reticle in which a plurality of mask patterns are formed.
4 is a view showing a shape error of a shot region due to deformation of a substrate.
5 is a view showing a process of an exposure operation based on a step-and-repeat method.
6 is a view showing an example of a deformed shape of a global alignment area;
7 is a view showing the shape error of the global alignment area and the shape error of the shot area in the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a schematic block diagram of a projection exposure apparatus according to the first embodiment. Hereinafter, a description will be given on an exposure process in which a single-layer pattern is formed on a substrate, and a mask pattern is superimposed on the shot region of the substrate after the second layer.

The projection exposure apparatus 10 is an exposure apparatus for transferring a mask pattern formed on a reticle (photomask) R onto a substrate (workpiece substrate) W in accordance with a step-and-repeat method and includes a light source 20 ), And a projection optical system 34. The reticle R is made of quartz or the like, and a mask pattern having a light shielding region is formed. As the substrate W, a substrate made of silicon, ceramics, glass, or resin (for example, an interposer substrate) is applied.

The illumination light emitted from the light source 20 enters the integrators 24 through the mirror 22, and the amount of illumination light becomes uniform. The uniformed illumination light is incident on the collimator lens 28 through the mirror 26. Thus, the parallel light enters the reticle R. [ The light source 20 is driven and controlled by the lamp driving unit 21.

The reticle R is mounted on the reticle stage 30 so that the mask pattern is formed and the mask pattern is located at the light source side focus position of the projection optical system 34. [ An aperture (not shown) is provided on the front side (light source side) of the reticle R, and illumination light enters only a part of the mask pattern.

A three-axis coordinate system of X-Y-Z orthogonal to each other is defined on the stage 30 on which the reticle R is mounted and the stage 40 on which the substrate W is mounted. The stage 30 is movable in the X-Y direction so as to move the reticle R along the focal plane, and is driven by the stage driving unit 32. Further, the stage 30 can rotate in the X-Y coordinate plane. The positional coordinates of the stage 30 are measured by a laser interferometer or a linear encoder (not shown).

The light transmitted through the field (area) of the mask pattern of the reticle R is projected as patterned light onto the substrate W by the projection optical system 34. [ The substrate W is mounted on the substrate stage 40 such that its exposure surface coincides with the upper focal position of the projection optical system 34. [

The stage 40 is movable in the X-Y direction so as to move the substrate W along the focal plane, and is driven by the stage driving section 42. The stage 40 is movable in the Z-axis direction (the optical axis direction of the projection optical system 34) perpendicular to the focal plane (X-Y direction) and can also be rotated in the X-Y coordinate plane. The position coordinates of the stage 40 are measured by a laser interferometer (not shown) or a linear encoder.

The control unit 50 controls the stage driving units 32 and 42 to position the reticle R and the substrate W and to control the lamp driving unit 21. Then, an exposure operation based on the step & repeat method is executed. A mask position coordinate of the reticle R, a design position coordinate of the shot area formed on the substrate W, a step movement amount, and the like are stored in a memory (not shown) provided in the control unit 50. [

The alignment mark imaging section 36 disposed on the side of the projection optical system 34 is a camera (or microscope) for imaging an alignment mark formed on the substrate W and captures an alignment mark before shot exposure. The image processing section 38 detects the position coordinates of the alignment mark based on the image signal transmitted from the alignment mark image sensing section 36. [ In addition, the alignment mark can be detected by the TTL method.

According to the step-and-repeat method, the control unit 50 transfers the mask pattern of the reticle R to each shot area formed on the substrate W one by one. That is, when the stage 40 is intermittently moved in accordance with the shot area interval and the shot area to be exposed is positioned at the projection position of the mask pattern, the controller 50 drives the light source 20, And projected onto the shot area.

Prior to the transfer of the mask pattern, the control unit 50 detects the alignment error of the shot area according to the global alignment method, and aligns the shot area of the substrate W with the projection area of the mask pattern. In this embodiment, the shape error of the shot area caused by the deformation of the substrate or the like is detected, and a mask pattern suitable for the shape error is projected to align the shot area and the pattern projection area. At this time, the shape error of the global alignment area is detected, and the error is regarded as the shape error of the shot area.

2 is a view showing a substrate on which shot regions are arranged. 3 is a view showing a reticle in which a plurality of mask patterns are formed. 4 is a view showing a shape error of a shot region due to deformation of a substrate. 2 to 4, the shape error of the shot area will be described.

As shown in Fig. 2, a shot area SA is formed on the substrate W by arranging them at regular intervals in the form of matrices according to the X-Y coordinate system. Alignment marks AM for alignment are formed in the four corners of each shot area in accordance with the arrangement of the shot areas SA.

In the global alignment method, a global alignment area including a predetermined number (one or more) of shot areas is defined, and arithmetic errors and correction values of shot areas are calculated by statistical calculation. In this case, the alignment mark SM for sample (measurement) is defined for each of four adjacent shot areas SA, and the global alignment area ARM is defined. In addition, a global alignment area (not shown here) is defined on the substrate W. In this example, a total of four global alignment areas are shot areas in the same arrangement.

The difference between the straightness of the shot area in the global alignment area ARM and the difference in the straightness of the shot area in the global alignment area ARM due to the difference between the position coordinates of the sample alignment mark SM and the position coordinates of the actually measured sample alignment mark SM, , A scaling error caused by linear expansion and contraction of the substrate W is detected. Based on the detected statistical error, the control unit 50 calculates a correction value for an offset value, a scaling value, and a rotation amount for each shot area, and moves the stage 40 along the XY coordinate axis or moves the XY coordinate plane Therefore, it rotates.

In the arrangement error of the shot area, the scaling error is an error caused by the substrate deformation, and can be corrected by the scaling correction value. However, a correction value can not be required for deformation of the shot area itself along the direction different from the X direction or the Y direction. The arrangement error of the shot area assumes that a rectangular image of the shot area SA having the sides along the X axis and the orthogonality (90 DEG) of the sides along the Y axis is maintained.

However, on the resin substrate W, a complicated deformation occurs due to heat shrinkage or the like, and the quadrangular image of the shot area is deformed into a shape in which the orthogonality is not maintained (here, it is referred to as a non-rectangular shape). When there is a difference in orthogonality, the quadrangular image changes into a parallelogram (diamond shape), a trapezoid, or the like. In addition, the non-square shape is also changed by the difference in precision of the difference in orthogonality.

Fig. 4 shows a deformation state of the shot area. The shot area VP1 is a shape of a shot area in which a quadrangular image is retained without substrate deformation and is a reference. When linear expansion and contraction occurs on the substrate W, the reference shot area VP1 maintains a rectangular shape, and only the dimension changes. The shot areas VP2 and VP3 show the shape of the linear deformation.

On the other hand, if there is a difference in orthogonality of the same precision with respect to the sides facing the +/- direction with respect to the X direction / Y direction, the shot area changes into a parallelogram shape. The shot area VP4 has a parallelogram shape (diamond shape) with a difference in orthogonality toward the -X direction, and the shot area VP6 has a difference in orthogonality toward the -Y direction. In addition, the shot areas VP5 and VP7 show a non-rectangular shape with a larger difference in orthogonality. The difference in orthogonality may also occur in the + X direction and the + Y direction.

Also, as shown in the shot area VP ', the reference shot area VP1 may be deformed like a trapezoidal shot area VP', resulting in a difference in orthogonality such that opposing sides approach each other. As described above, deformation of the shot region from a rectangular shape to a non-rectangular shape due to the warpage of the substrate W is various.

In the present embodiment, a plurality of mask patterns (deformed mask patterns) are formed in the reticle R, matching the shot areas deformed to various non-rectangular shapes with respect to the same pattern-forming layer (here, two layers) of the substrate. As shown in Fig. 3, here, eight mask patterns are formed on the reticle R, and the field shape (pattern area shape) of each mask pattern corresponds to the deformation shape of the shot area.

Here, the mask pattern P1 has a field shape corresponding to the reference shot area VP1. The mask patterns P2 to P7 have a field shape corresponding to the shot areas VP2 to VP7. In this case, the mask pattern forms a pattern in accordance with the field shape. For example, in the case of the shot area VP4, the linear wiring lines are inclined according to the difference in orthogonality?.

Therefore, by measuring the shape of the modified shot area and selecting a mask pattern corresponding to the deformed non-rectangular shape (i.e., the accuracy of deformation and the characteristic of deformation are the same) And can be superimposed on the modified shot area with high precision. In addition, the shot area can be set to a shape other than a rectangle (for example, a rectangle with some incision part), and a mask pattern can be prepared for such a shot area according to the shape error.

The shot areas VP2 and VP3 of only the scaling error can be scaled by the adjustment of the projection optical system or the like and only the mask pattern corresponding to the shape error that can not be compensated by the scaling correction can be formed in the reticle R. [ It is also possible to select a mask pattern in accordance with the distortion of a pattern image due to the adjustment of the projection optical system.

5 is a diagram showing a process of an exposure operation based on the step & repeat method. 6 is a diagram showing an example of a deformed shape of the global alignment area.

As described above, the four global alignment areas ARO, ARP, ARN, and ARM are defined on the substrate W, and the alignment errors and the shape errors of the shot areas are measured for each global alignment area (S101). Since the shape error of the shot area uses the shape error of the global alignment area as it is, the positional coordinates of the alignment mark SM for the sample are measured and the shape of the shot area is calculated from the difference in orthogonality of the global alignment area, And calculates an error.

Fig. 6 shows the difference in orthogonality of the global alignment area ARM due to substrate deformation. When deformation into a diamond shape or a parallelogram shape is measured by the statistical calculation with respect to the global alignment area ARM, it is regarded that the same rectangular area exists in the shot area SA among them.

Then, a correction value such as a scaling value, an offset amount, and a rotation amount is calculated based on the arrangement error of the shot area, and a mask pattern having a field shape corresponding to the shape of the shot area is selected (S102). The reticle R is positioned so that the illumination light passes through the selected mask pattern by the movement of the stage 30 and exposure by the step and repeat method is performed so that the shot area to be exposed coincides with the pattern projection area (S103). When the exposure for one global alignment area is completed, the same exposure operation is performed for the other global alignment area (S104). This exposure operation is performed in multiple layers with respect to the substrate, whereby the substrate is manufactured.

As described above, according to the present embodiment, a plurality of mask patterns corresponding to the deformation of the shot region formed in the predetermined pattern formation layer of the substrate are formed for the reticle R, and a plurality of shot regions The mask pattern is transferred to the substrate on which the mask is formed. The positional coordinates of the alignment mark for the sample are measured according to the global alignment method and the shape error of the shot area is detected from the shape error of the global alignment area. Then, a mask pattern having a field shape corresponding to the shape error, that is, a shape in which the deformed state tends to be the same is selected.

Next, the projection exposure apparatus according to the second embodiment will be described with reference to Fig. In the second embodiment, the shape error of the shot area is measured independently of the global alignment.

7 is a diagram showing the shape error of the global alignment area and the shape error of the shot area in the second embodiment.

In the second embodiment, the alignment error of the shot area is measured based on the alignment mark SM for the sample in the global alignment area ARM, and the alignment marks AM defined in the four corners of each shot area SA The image of the shot area SA is picked up by the alignment mark image pickup section 36 and the statistical value such as the average value of the position coordinates of each shot area is calculated to calculate the shape error of the shot area SA.

Here, the shot area SA is deformed into a trapezoidal shape, and a rotation difference (rotation of the entire shot area with respect to the X axis or Y axis) occurs, and the rotation deviation amount differs depending on the position of the shot area. This makes it possible to measure an accurate shape error for each shot area. In the case of the global alignment method according to the first embodiment, it is possible to measure the rotation difference in the global alignment area, and to measure it as the rotation difference of the shot area.

In addition, individual shape errors can be calculated without requiring an average value of the shape errors. Alternatively, a shape error of a shot area at a specific position in the global alignment area may be calculated, and the same shape error may be estimated for another shot area.

In the first and second embodiments, a mask pattern is prepared in consideration of the difference in orthogonality according to the substrate distortion along the direction different from the X-Y coordinate axis. However, a mask pattern corresponding to the deformation of the other shot regions is prepared It is also possible to do. For example, it is possible to form a mask pattern such as a yarn type, a barrel type, a sector shape, a hog-backed type, or the like.

In addition, a mask pattern can be prepared in accordance with the shape error (deformation) of the shot region due to a cause other than the distortion of the substrate. For example, a mask pattern for correcting the warping of the projection optical system may be formed, or a mask pattern corresponding to the shape deformation of the shot region due to the unevenness of the substrate may be prepared.

The alignment mark may be a mark such as a hole or the like. The photomask is not limited to one, and a plurality of reticles can be prepared and one or a plurality of mask patterns can be formed in each reticle. In this case, a plurality of reticles are position-controlled.

10 projection exposure apparatus
36 Alignment mark imaging section (shape error measuring section)
38 Image processing section (shape error measuring section)
40 stages
42 stage driving part (scanning part)
50 control unit (operation unit, exposure control unit)
W substrate
P2 to P8 modified mask pattern
SA shot area
Alignment mark for SM sample
AM alignment mark
ARM global alignment area
R reticle (photomask)

Claims (13)

A substrate on which a plurality of two-dimensionally arranged shot areas and a plurality of alignment marks provided according to the array of the plurality of shot areas are formed is intermittently moved relative to the projection area of the mask pattern formed on the photomask A scanning unit,
An exposure control section for transferring the mask pattern to the plurality of shot areas in accordance with a step &
And a shape error measuring section for measuring a two-dimensional shape error of a predetermined shot area with reference to the designed shot area from the positions of the plurality of alignment marks,
Wherein the photomask has a plurality of mask patterns corresponding to a plurality of shot regions having different shape errors with respect to a designed shot region,
Wherein the exposure control unit selects a mask pattern corresponding to the measured shape error among the plurality of mask patterns and transfers the mask pattern. The method according to claim 1,
Wherein the plurality of alignment marks include alignment marks for samples defining a global alignment area composed of a predetermined number of shot areas,
Wherein the exposure control unit measures the shape error of the global alignment based on the position of the sample alignment mark and selects the mask pattern corresponding to the shape error. 3. The method of claim 2,
An alignment mark for sample is provided in accordance with a plurality of global alignment areas defined on the substrate,
Wherein the exposure control unit measures a shape error for each global alignment area. 4. The method according to any one of claims 2 to 3,
The exposure control unit calculates a shot area alignment error in the global alignment based on the position of the sample alignment mark and measures the shape error of the shot area based on the position of the alignment mark defining the shot area in the global alignment area Wherein the projection exposure apparatus comprises: 5. The method of claim 4,
Wherein the shape error of the shot area includes at least a difference in orthogonality of the shot area. 6. The method of claim 5,
Wherein the shape error of the shot area includes at least a rotation difference of the shot area. A plurality of alignment marks arranged in a two-dimensionally arranged manner and a plurality of alignment marks provided in accordance with the arrangement of the plurality of shot areas are formed on the substrate, The shape error of the deformed shot area is measured,
Intermittently moves relative to the projection area of the mask pattern formed on the photomask,
A projection exposure method for transferring a mask pattern to a plurality of shot areas in accordance with a step-and-repeat method,
Wherein said photomask has a plurality of mask patterns each corresponding to a plurality of deformed shot areas having different shape errors,
Wherein a mask pattern corresponding to the measured shape error is selected from among the plurality of mask patterns, and the mask pattern is transferred. In a photomask for a projection exposure apparatus,
Wherein the photomask has a plurality of mask patterns corresponding to a plurality of shot areas having different two-dimensional shape errors with reference to a shot area in the design. 9. The method of claim 8,
Wherein the plurality of deformed mask patterns have a mask pattern corresponding to a shot area in which a difference in orthogonality degree or a difference in rotation occurs with respect to a shot area in design. 9. The method of claim 8,
Wherein the plurality of mask patterns have a field shape of one of a parallelogram shape, a diamond shape, a trapezoid shape, a barrel shape, and a yarn type. 11. The method according to any one of claims 8 to 10,
Wherein the photomask further has a mask pattern having a field that is the same as the shape of the shot area in the design. 9. A projection exposure apparatus comprising the photomask for a projection exposure apparatus according to claim 8. A method of manufacturing a substrate using the projection exposure apparatus described in any one of claims 8 to 10 in a projection exposure apparatus.

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