200813648 九、發明說明： 【發明所屬之技術領域】 本發明尤其係關於一種在液晶顯示器或電漿顯示器等之 大型平面顯示器之基板上’將光罩之光罩圖案分割依次近 接曝光（近接（Proximity)曝光）之近接曝光裝置及近接曝光 方法。 【先前技術】 近接曝光中，將在表面塗佈感光劑之透光性基板（被曝 光材）保持於基板臺上，並且使基板接近光罩台之光罩保 持框所保持之光罩，在將兩者配置為特定之間隙、例如數 10 μιη〜數1〇〇 μηι之狀態下使兩者靜止。繼之，從光罩之離 開基板側藉由照射機構向光罩照射曝光用之 板上轉印_於光罩之光罩圖案（例如，參照專利猎文匕獻在= 及非專利文獻1)。 然而，近接曝光中，若基板或光罩成為大型時，則此等 容易因處理液、熱、或吸盤等而產生伸縮，若無視該伸縮 進行曝光時，則有在應轉印於基板之圖案上產切位之可 能性。 於專利文獻1〜3記載之曝光裝置中，為了防止如此之因 基板或光罩伸縮引起之曝光錯位’向光軸方向移動積分器 或透鏡以變更照射角，來調整投影於基板之光罩圖案：曝 光倍率。 上又，在非專利文IU中，可知為了謀求光學微影技術之 向解像度化而進行二度曝光。 121208.doc 200813648 專利文獻1:曰本特開2003-224058號公報 專利文獻2:日本特開2006-98649號公報 專利文獻3:日本特開2006-98650號公報 非專利文獻1 :「曰經微型裝置（micro device)」，曰本， 曰經BP市場運營（Marketing)，2006年4月，96〜103頁 【發明内容】 [發明所欲解決之問題] p 然而，藉由專利文獻1〜3所記載之照射機構來調整曝光 錯位之方法中，有在照射面之照度值上產生波動或偏差之 可能性，而且有對照射面之變形或曝光精度（例如之四 方形）之修正困難之問題。因此，期望一種減小照射面之 照度值波動或偏差可進行更均勻之倍率修正，且可進行曝 光精度修正之近接曝光裝置及近接曝光方法。 本發明係鑒於上述情形所完成者，其第1目的在於提供 一種近接曝光裝置及近接曝光方法，該近接曝光裝置及近 1； 接曝光方法係可進行更均勻之倍率修正，且曝光精度亦可 同時修正，可製造高解像度、高密度、且高精度之基板 者 又，本發明之第2目的在於提供一種近接曝光裝置及 近接曝光方法，其係可不使照射機構變更為複雜之構成， 而能夠防止因基板或光罩伸縮引起之曝光錯位，製造高精 度且低成本之基板者。 [解決問題之技術手段] 本發明之上述第1目的藉由下述構成來達成。 (1) 一種近接曝光裝置，其特徵在於：其係具備保持作為 121208.doc 200813648 被曝光材之基板之基板保持部，保持具有光罩圖案之光罩 之光罩保持部，及將圖案曝光用光經由光罩向前述基板昭 射之照射機構，·且在保持特定間隙而將光罩與基板相互近 接配置之狀態下，將光罩之光罩圖案藉由照射機構曝光轉 印於基板者；並且 照射機構具有準直鏡及照射角度變更機構，該照射角度 變更機構係進行準直鏡之變形 &汉矛夕勁中之至少一者，以變 ('.$藉由準直鏡所反射之圖案曝光用光之照射角度者。 U)如（1)之近接曝光裝置> 1 曾』 /、中進一少具備檢測光罩與 基板之平面錯位量之錯位量檢測機構；且 /、 光罩與基板之間之特定問ρέ、B MW 4 g ? 疋間隙及糟由準直鏡所反射之圖荦 曝光用光之照射角唐，舻姑雜丄 口未 根據猎由錯位量檢測機構所檢測之 平面錯位量來設定。 (3) 一種近接曝光方法，1牯 s 八 在於：其係對具備如（υ 或（2)之近接曝光裝置之近接 — 接曝先方法者；且具備 J 藉由照射角度變更機構進行準直浐 > R > 少一者，以變更藉由準直^ 移動中之至 角度之步驟；及 匕心…、射200813648 IX. Description of the Invention: [Technical Field] The present invention relates in particular to a method of sequentially splicing a reticle pattern of a reticle onto a substrate of a large flat panel display such as a liquid crystal display or a plasma display (Proximity) Exposure) The proximity exposure device and the proximity exposure method. [Prior Art] In the proximity exposure, the light-transmitting substrate (the exposed material) coated with the photosensitive agent on the surface is held on the substrate stage, and the substrate is brought close to the mask held by the mask holding frame of the mask stage. The two are placed in a specific gap, for example, in a state of several 10 μm to several 1 μm, and both are allowed to stand still. Then, the reticle pattern of the reticle is transferred from the substrate on the side of the reticle that is irradiated to the reticle by the illuminating mechanism (for example, refer to Patent Hunter = = = Non-Patent Document 1) . However, in the case of the proximity exposure, if the substrate or the mask is large, it is easy to expand and contract due to the treatment liquid, heat, or the suction cup, and if the exposure is performed regardless of the expansion and contraction, there is a pattern to be transferred to the substrate. The possibility of a cut in production. In the exposure apparatus described in Patent Documents 1 to 3, in order to prevent the exposure misalignment caused by the expansion or contraction of the substrate or the mask, the integrator or the lens is moved in the optical axis direction to change the irradiation angle, and the mask pattern projected on the substrate is adjusted. : Exposure magnification. Further, in the non-patent IU, it is known that the second exposure is performed in order to achieve resolution of the optical lithography technique. Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. 2006-98. "micro device", 曰本, BP by BP market operation (Marketing), April 2006, pages 96-103 [invention content] [invented problem to be solved] p However, by patent documents 1 to 3 In the method of adjusting the exposure misalignment by the described illumination mechanism, there is a possibility that fluctuation or deviation occurs in the illuminance value of the illumination surface, and there is a problem that correction of the deformation of the illumination surface or the exposure accuracy (for example, a square) is difficult. . Therefore, it is desirable to provide a proximity exposure apparatus and a proximity exposure method which can reduce the fluctuation or deviation of the illumination value of the illumination surface to perform more uniform magnification correction and to correct the exposure accuracy. The present invention has been made in view of the above circumstances, and a first object thereof is to provide a proximity exposure apparatus and a proximity exposure method, and the proximity exposure apparatus and the proximity exposure method can perform more uniform magnification correction, and the exposure precision can also be At the same time, it is possible to manufacture a substrate having high resolution, high density, and high precision. A second object of the present invention is to provide a proximity exposure apparatus and a proximity exposure method, which can change the illumination mechanism to a complicated configuration. Preventing the misalignment caused by the expansion or contraction of the substrate or the mask, and manufacturing a substrate with high precision and low cost. [Technical means for solving the problem] The above first object of the present invention is achieved by the following configuration. (1) A proximity exposure apparatus comprising: a substrate holding portion that holds a substrate as an exposure material of 121208.doc 200813648; a mask holding portion that holds a mask having a mask pattern; and a pattern exposure portion An illuminating mechanism that illuminates the substrate through the reticle, and in a state in which the reticle and the substrate are placed close to each other while maintaining a specific gap, the reticle pattern of the reticle is exposed and transferred to the substrate by an irradiation mechanism; Further, the illuminating means includes a collimating mirror and an illuminating angle changing mechanism, and the illuminating angle changing mechanism performs at least one of the deformation of the collimating mirror & the spur of the spurs, and is changed ('.$ reflected by the collimating mirror) The pattern is exposed to light by the angle of illumination. U) The proximity exposure device of (1) > 1 has, /, the medium-to-mind has a misalignment detection mechanism for detecting the amount of misalignment of the reticle and the substrate; and /, light The specific problem between the cover and the substrate is ρέ, B MW 4 g 疋 疋 gap and the reflection by the collimator lens 荦 the exposure angle of the exposure light, the 舻 丄 丄 未 未 according to the hunting error detection mechanism Plane error The amount is set. (3) A proximity exposure method, in which a pair is provided with a proximity proximity exposure method such as (υ or (2), and a J is collimated by an illumination angle changing mechanism浐> R > One less, to change the step by collimating ^ to the angle; and 匕心..., shot
藉由由照射機構所照射之R …、耵之圖案曝光用光，將光罩 圖案曝光轉印於基板之步驟。 光罩之曝先 如（3)之近接曝光方法，其中進—步具備： 藉由錯位量檢測機構檢 驟，及 ^先罩與基板之平面錯位量之步 將光罩與基板之間調整 t主特疋間隙之步驟；且 121208.doc 200813648 光罩與基板之間之特定間隙及藉由準直鏡所反射之圖案 曝光用光之照射角度，根據藉由錯位量檢測機構所檢測之 平面錯位量來設定。 本發明之上述第2目的藉由下述構成來達成。 • (5)—種近接曝光裝置，其特徵在於：其係㈣保持作為 被曝光材之基板之基板保持部，保持具有光罩圖案之光罩 ，《光罩保持部，將具有特定照射角之圖案曝光用光經由光 Ο I自基板照射之照射機才冓，及檢測光罩與基板之平面錯位 量之錯位量檢測機構;且在保持特定間隙而將光罩與基板 相互近接配置之狀態下，在特定之曝光時間期間將光 光罩圖案藉由照射機構曝光轉印於基板者；並且 使基板保持部與光罩保持部中任一者沿上下方向移動， 以便成為根據藉由錯位量檢測機構所檢測之平面錯位量之 特定間隙；並且 在特定之曝光時間中途停止曝光轉印之狀態下，根據特 ϋ定之間隙使基板保持部與光罩保持部中任一者沿水平方向 移動特定量。 (6) 如（5)之近接曝光裝置，其中使基板保持部與光罩保 持部中任一者相對於水平方向傾斜，以便使曝光轉印時之 特定間隙隨基板之各位置平面錯位量而異。 (7) 如（5)或（6)之近接曝光裝置，其中進一步具備基板移 動機構，其係至少沿上下方向移動基板保持部，以便使基 板人光罩之間成為特定之間隙者；及光罩移動機構，其係 至少沿水平方向移動光罩保持部，以便使光罩相對於基板 121208.doc 200813648 沿枣千方向移動者。 ⑻如(5)〜⑺中之任一近接曝光裝置 動前之第！曝光時間，與水U ^平方向移 間減去㈣光時間之第2曝光時間特定之曝光時 射之各曝光轉印之光量相等。 仃之從照射機構照 (9) 種近接曝光方法，盆特符& ^ 祕光材之基板之基板保持:二=具儀保持作為 η 之光罩保持部，將具有特定照射二有光罩圖案:光罩 罩向基板照射之昭射機構 ·“用光絰由光 量之样… 及檢測光革與基板之平面錯位 相互近接配置之狀態下，=二而將光罩與基板 在特疋之曝光時間期 ，罩圖案藉由照射機構曝光轉印於基板 使基板保持部與光罩保持部中任且-備· 以便根據藉由錯位量檢洌機 °下方向移動’ 定間隙之步驟；叫構所檢測之平面錯位量成為特 在第1曝光時間期間將光罩之光 光轉印於基板之第!曝光步驟； 曰由…、射機構曝 在第1曝光步驟後根據特定 仵持邻巾# 板保持部與光罩 保持。…壬—者沿水平方向移動特定量之步驟.及 在水平方向移動後，在從特定之曝料 時間之第2曝光時間期Fa1，將光k光弟1曝先 構曝光轉印於基板之第2曝光步驟。 -猎由照射機 ⑽如⑺之近接曝光方法，其中進一步具 使基板保持部與光罩保持部 乂驟· T任者相對於水平方向傾 121208.doc 200813648 斜，以便使曝光轉印時之特定間隙隨基板之各位置之平面 錯位量而異。 (11)如（9)或（10)之近接曝光方法，其中從照射機構照射之 光量在第1曝光步驟與第2曝光步驟中互為相等。 【實施方式】 以下，茲就本發明之各實施形態之近接曝光裝置及近接 曝光方法參照圖式進行詳細說明。 (第1實施形態） 圖1係顯示第1實施形態之在大型基板上將光罩之光罩圖 案分割進行近接曝光之分段式近接曝光裝置PE;其主要^ 含.光罩台10，其係可沿x、y、㊀方向移動地保持具有光 罩圖案之光罩μ者；基板台2G，其係可沿x、y、z方向移 動地保持作為被曝光材之玻璃基板w者；照明光學系仂， 其係將具有特定之照射角、亦即向光罩Μ照射之有效曝光 的光與光軸所形成之最大角度之傾斜角ed(參照圖5)之圖 案曝光用光，經由光罩M向基板w照射之照射機構；及控 制裝置70。 工 並且，玻璃基板W(以下僅稱作「基板w」）係與光罩“ 相對配置，且在應曝光轉印描繪於該光罩Μ之光罩圖案之 表面（光罩Μ之相對面側）塗佈感光劑。 光罩台1〇係具備：光罩台基座u，其係在中央部形成矩 形形狀之開口 lla者；光罩保持框12，其係可沿χ轴” 軸、e方向移動地安裝於光罩台基座丨〗之開口 Ua、保持光 罩Μ之光罩保持部；及光罩位置調整機構η，丨係、設置於 121208.doc -10- 200813648 光罩台基座11之上面、 J使光罩保持框12沿\軸、 方向移動之光罩移動機構。 *光罩台基座11藉由立設於基板台側之裝置基座50上之複 數支柱5 1所支持，藉由 基座11與支柱51之間 之z軸粗動_52(參關2)，料台基座 基座50昇降。 耵π衷置 ΓThe step of exposing the mask pattern to the substrate by exposure of the pattern of R ... and 耵 irradiated by the irradiation means. The exposure of the mask is as follows: (3) the proximity exposure method, wherein the step-by-step method comprises: adjusting the mask between the mask and the substrate by the step of detecting the displacement of the displacement amount, and the step of offsetting the plane between the mask and the substrate The step of the main feature gap; and 121208.doc 200813648 The specific gap between the mask and the substrate and the illumination angle of the pattern exposure light reflected by the collimator mirror, according to the plane misalignment detected by the misalignment amount detecting mechanism The amount is set. The above second object of the present invention is achieved by the following constitution. (5) A proximity exposure apparatus characterized in that: (4) holding a substrate holding portion as a substrate of an exposed material, and holding a photomask having a mask pattern, the mask holding portion having a specific irradiation angle The pattern exposure light is irradiated from the substrate by the diaphragm I, and the misalignment amount detecting mechanism for detecting the amount of misalignment between the mask and the substrate; and the mask and the substrate are placed close to each other while maintaining a specific gap. And transferring the mask pattern to the substrate by the irradiation mechanism during a specific exposure time; and moving the substrate holding portion and the mask holding portion in the up and down direction so as to be detected by the displacement amount a specific gap of the amount of plane misalignment detected by the mechanism; and in a state where the exposure transfer is stopped in the middle of the specific exposure time, the substrate holding portion and the mask holding portion are moved in the horizontal direction by a specific amount according to the specific gap . (6) The proximity exposure apparatus of (5), wherein one of the substrate holding portion and the mask holding portion is inclined with respect to the horizontal direction so that a specific gap at the time of exposure transfer is displaced with respect to each position of the substrate different. (7) The proximity exposure apparatus according to (5) or (6), further comprising: a substrate moving mechanism that moves the substrate holding portion at least in the up and down direction so as to make a gap between the substrate human masks; and The cover moving mechanism moves the reticle holding portion at least in a horizontal direction to move the reticle relative to the substrate 121208.doc 200813648 in the direction of the ridge. (8) If any of (5)~(7) is connected to the exposure device before the move! The exposure time is subtracted from the water U^ plane direction minus (4) the second exposure time of the light time. The amount of light for each exposure transfer is equal.从 从 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射Pattern: the illuminating mechanism that the reticle is irradiated to the substrate. "In the state where the amount of light is used by the light ray and the plane of the light and the substrate are placed in close proximity to each other, the reticle and the substrate are in particular. During the exposure time period, the mask pattern is exposed to the substrate by the irradiation mechanism, and the substrate holding portion and the mask holding portion are arranged to be moved in accordance with the step of moving the gap by the offset amount detecting device; The amount of planar misalignment detected by the structure is the first step of transferring the light of the photomask to the substrate during the first exposure time! The exposure step is performed by the exposure mechanism after exposure to the first exposure step. #板保持部与带罩....壬—The step of moving a certain amount in the horizontal direction. And after moving in the horizontal direction, the light k is the first in the second exposure time period Fa1 from the specific exposure time. Exposure to the second exposure exposed to the substrate Light step - hunting by the irradiation machine (10), such as the proximity exposure method of (7), wherein the substrate holding portion and the mask holding portion are further tilted with respect to the horizontal direction 121208.doc 200813648 obliquely for exposure transfer The specific gap of the time varies depending on the amount of planar misalignment of each position of the substrate. (11) The proximity exposure method of (9) or (10), wherein the amount of light irradiated from the irradiation means is in the first exposure step and the second exposure step [Embodiment] Hereinafter, a proximity exposure apparatus and a proximity exposure method according to embodiments of the present invention will be described in detail with reference to the drawings. (First Embodiment) Fig. 1 shows a large scale in the first embodiment. a segmented proximity exposure device PE for dividing the reticle pattern of the reticle onto the substrate; wherein the reticle stage 10 is movably held in the x, y, and one directions a photomask μ; a substrate stage 2G which is movable as a glass substrate w as an exposed material in the x, y, and z directions; and an illumination optical system which has a specific illumination angle, that is, a light beam Cover An illumination mechanism for pattern exposure light having an inclination angle ed (see FIG. 5) of the maximum angle formed by the exposed light and the optical axis, and an irradiation means for irradiating the substrate w via the mask M; and a control device 70. Hereinafter, simply referred to as "substrate w") is disposed opposite to the mask, and a sensitizer is applied to the surface of the reticle pattern (the opposite side of the reticle) to be exposed and transferred onto the reticle. The cover table 1 includes a mask stage base u which is formed in a rectangular shape opening 11a at a central portion thereof, and a mask holding frame 12 which is movably attached to the mask along the x-axis and the e-direction. The opening Ua of the base 丨, the reticle holding portion for holding the reticle, and the reticle position adjusting mechanism η are disposed on the upper surface of the reticle base 11 of the 121208.doc -10- 200813648 The reticle holding mechanism 12 moves the reticle moving mechanism along the \ axis and the direction. * The mask stage base 11 is supported by a plurality of pillars 51 which are erected on the apparatus base 50 on the substrate stage side, and the z-axis is coarsely moved by the base 11 and the pillar 51. ), the stage base base 50 is raised and lowered.耵π心衷 Γ
在光罩保持框12’在下面開設用於吸附光罩批未描縿 有光罩圖案之周緣部之未圖示之複數吸嘴，藉由未圖示之 真王吸附機構裝卸自如地保持光罩μ。 光罩位置調整機構13係藉由驅動光罩保持框12之各種氣 缸13χ、13y等之致動器’及設置於光罩台基座11與光罩保 持框12之間之未圖示之導引機構等’使光罩保持框⑵沿父 軸、y軸、Θ方向移動。 又，光罩台10進一步具備：複數之間隙感測器17(本實 施形態中為8個）’其係測定光罩M與基板w之相對面間之 特定間隙之間隙檢測機構；複數之對準照相機18(本實施 形怨中為4個），其係對於光罩M側之未圖示之對準標記及 基板w侧之未圖示之對準標記攝影，檢測光罩m與基板w 之平面錯位量之錯位量檢測機構；及遮蔽孔19，其係根據 需要遮蔽光罩Μ者。並且，間隙感測器丨7及對準照相機i 8 亦可名光罩保持框12之邊部可驅動地配置。又，圖中遮蔽 孔19雖僅顯示在開口 llaiX方向之兩端部，但在丫方向之 兩端部亦有設置。 基板台20係具備：基板保持部2丨，其係保持基板…者； 121208.doc 11 200813648 及基板移動機構22，其係相對於裝置基座5〇沿χ、乂、z方 向移動基板保持部2 1者。 基板保持部21在上面開設用於吸引基板w之未圖示之複 數之吸嘴’藉由未圖示之真空吸附機構裝卸自如地保持基 板W 〇 、 基板移動機構22在基板保持部21之下方具備_移動台 23、y軸進給機構24、χ軸移動台25、χ軸進給機構％、及A plurality of nozzles (not shown) for adsorbing the peripheral portion of the reticle pattern without the reticle pattern are formed on the lower surface of the reticle holding frame 12', and the light is detachably held by a true king adsorption mechanism (not shown). Cover μ. The mask position adjusting mechanism 13 is an actuator (not shown) that drives the various cylinders 13A, 13y and the like of the mask holding frame 12 and a guide between the mask base 11 and the mask holding frame 12. The guiding mechanism or the like 'moves the mask holding frame (2) in the parent axis, the y axis, and the x direction. Further, the mask stage 10 further includes a plurality of gap sensors 17 (eight in the present embodiment), which are gap detecting means for measuring a specific gap between the opposing faces of the mask M and the substrate w; The quasi-camera 18 (four in the present embodiment) is an alignment mark (not shown) on the side of the mask M and an alignment mark (not shown) on the substrate w side, and the mask m and the substrate w are detected. a misalignment amount detecting mechanism for the plane misalignment amount; and a shielding hole 19 for shielding the photomask as needed. Further, the gap sensor 丨7 and the alignment camera i8 may be driveably arranged at the side of the reticle holding frame 12. Further, although the shielding holes 19 are shown only at both end portions in the direction of the opening llaiX, they are also provided at both end portions in the x direction. The substrate stage 20 includes a substrate holding portion 2 that holds the substrate, and a substrate moving mechanism 22 that moves the substrate holding portion in the χ, 乂, and z directions with respect to the device base 5 2 1 person. The substrate holding portion 21 has a plurality of nozzles (not shown) for sucking the substrate w on the upper surface. The substrate W is detachably held by a vacuum suction mechanism (not shown), and the substrate moving mechanism 22 is below the substrate holding portion 21. Having a mobile station 23, a y-axis feed mechanism 24, a cymbal mobile station 25, a cymbal feed mechanism %, and
Ζ-傾斜調整機構27。 y軸進給機構24如圖2所示，構成為具備直線導引件似 進給驅動機構29。安裝於_移動台23之背面之滑塊係 經由轉動體（未圖示)跨架於在裝置基座5〇上延伸之）根導執 31。又，y軸移動台23藉由電動機32及滾珠螺桿裝置”沿 導軌3 1驅動。 並且，X轴進給機構26亦具有與7軸進給機構24相同之構 成，相對於y軸移動台23沿X方向驅動x軸移動台25。又， z-傾斜調整機構27係構成為：將組合楔狀之移動體34、μ 及進給驅動機構36而形成之可動楔機構，在χ方向之一端 側配置1台’在另一端側配置2台。並 工立，進給驅動機構 29、36既可係組合電動機及滾珠螺桿|置之構成，亦可係 具有定子及可動元件之線性馬達。又 ^ 又傾斜調整機構27 之設置數量可任意。 藉此’基板移動機構2.方向及y方向進給驅動基板保 持部2卜與此同時沿z軸方向微動且傾斜調整基板保持部 2 1 ’以微調光罩μ與基板W之間之間隙。 121208.doc •12- 200813648 在基板保持部2kx方向側部及π向側部分別安裳條狀 鏡61、62,又在裝置基座50之,方向端部及χ方向端部設置 合計3台之雷射干涉計63' 64' 65。藉此’從雷射干涉計 63、64、65向條狀鏡61、62照射雷射光，接受藉由條狀鏡 6卜62所反射之雷射光後，測定雷射光與藉由條狀鏡㈠、 62所反射之雷射光之干涉，檢測基板台之位置。Ζ-tilt adjustment mechanism 27. As shown in Fig. 2, the y-axis feed mechanism 24 is configured to include a linear guide-like feed drive mechanism 29. The slider attached to the back of the _ mobile station 23 is bridged by a root guide 31 extending over the apparatus base 5 through a rotating body (not shown). Further, the y-axis moving table 23 is driven along the guide rail 31 by the motor 32 and the ball screw device. Further, the X-axis feed mechanism 26 also has the same configuration as the 7-axis feed mechanism 24, and moves the table 23 with respect to the y-axis. The x-axis moving stage 25 is driven in the X direction. Further, the z-tilt adjusting mechanism 27 is configured as a movable wedge mechanism formed by combining the wedge-shaped moving bodies 34 and μ and the feed drive mechanism 36, at one end of the χ direction One side is disposed on the other side, and two units are disposed on the other end side. The feed drive mechanisms 29 and 36 can be combined with a motor and a ball screw, or a linear motor having a stator and a movable element. ^ The number of the tilt adjustment mechanisms 27 can be arbitrarily set. The substrate moving mechanism 2 and the y-direction feed drive substrate holding portion 2 are simultaneously moved in the z-axis direction and tilted to adjust the substrate holding portion 2 1 ' The gap between the mask μ and the substrate W is finely adjusted. 121208.doc •12- 200813648 The strip mirrors 61 and 62 are respectively mounted on the side of the substrate holding portion 2kx direction and the side of the π direction, and are again on the device base 50. A total of three lasers are arranged at the end of the direction and at the end of the χ direction. Referring to 63' 64' 65, the laser light is irradiated to the strip mirrors 61, 62 from the laser interferometers 63, 64, 65, and the laser light reflected by the strip mirror 6 62 is received. The light is detected by the interference of the laser light reflected by the strip mirrors (1) and 62 to detect the position of the substrate stage.
照明光學系40係具備··紫外線照射用光源之例如高壓水 銀燈41，將從該高壓水銀燈41照射之光集光之凹面鏡u， 切換自如地配置於該凹面鏡42之焦點附近之二種類之光學 積分器43 ’用於改變光路方向之平面鏡45、牝及準直鏡 47,及配置於該平面鏡45與光學積分器43之間而開:控2 照射光路之曝光控制用快門44。 並且’曝光時該曝光控制用快門44進行開控制，則從高 壓水銀燈4 1照射之光就經過圖1所示之光路乙向保持於光罩 台10之光罩Μ，乃至保持於基板台20之基板W之表面照射 作為圖案曝光用之光，光罩Μ之光罩圖案被曝光轉印於基 板W上。 準直鏡4 7係將從高壓水銀燈41照射之光反射後變換為大 致平行光（更具體而言係具有特定照射角度之傾斜角㊀d之 光）之鏡，且在形成為凹面狀之反射面47a之背面47b，安 A使準直鏡47變形來變更傾斜角0d之照射角度變更機構 71 〇 照射角度變更機構71，如圖4所示，例如使用滾珠螺桿 機構或流體壓力拉伸或擠壓支持準直鏡47之背面47b之複 121208.doc -13- 200813648 數之支持構件73，使準直鏡47變形，藉此變更傾斜角θά。 控制裝置70，如圖3所示，具備：輸入介面電路7〇a，其 係具有用於讀取來自對準照相機18、間隙感測器17及雷射 干涉計63、64、65之檢測信號作為檢測值之A/D變換功能 . 者；演算處理裝置7〇b; ROM、RAM等之記憶裝置7〇c;及 輸出介面電路70d，其係將藉由演算處理裝置7〇b所得到之 控制信號向光罩位置調整機構13、基板移動機構22、冗軸 〇 粗動機構52、曝光控制用快門44、及照射角度變更機構71 一 之各驅動電路輸出者。 控制裝置70基本上使用微電腦或程序裝置等之順序控制 實行照明光學系40之快門開控制、基板移動機構22之進給 控制、分段進給誤差量之演算、對準調整時之修正量之演 异、間隙調整時之z-傾斜調整機構27之驅動控制、照射角 f變更機構71之驅動控制、及裝入本裝置之幾乎所有致動 器之驅動及特定之演算處理。 〇 j述構成之分段式近接曝光裝置PE中，在光罩]^被保持 "光罩保持框12、基板w被保持於基板保持部2〗之狀態 下井控制裝置70根據對準照相機18、間隙感測器17及雷射 干涉計63、64、65之檢測信號，驅動控制光罩位置調整機 7 13對準相對於基板保持部21之光罩μ之初期位置，驅動 拴制ζ軸粗動機構52、傾斜調整機構27，將光罩μ與基板 %之相對面間調整至特定之間隙，相互近接配置。 =，控制裝置70係在對準照相機18確認出設置於光罩μ 之標記與設置於基板w之標記時進行檢測，根據藉由光罩 121208.doc -14- 200813648 Μ或基板W之伸縮之平面錯位量e、及間隙感測器i 7所檢測 之光罩Μ與基板W之相對面間之特定間隙§，演算修正平面 錯位所需準直鏡47之變形量，使照射角度變更機構71動作 而使準直鏡47變形。 並且，藉由準直鏡47所反射之圖案曝光用光具有特定之 傾斜角ed，故藉由調整光罩厘與基板貿之間之特定間隙g亦 可進打光罩圖案之倍率修正。因此，只要根據藉由對準照 相機18所檢測之平面錯位量，任意調整光罩“與基板w之 間之特定間隙g及藉由準直鏡47所反射之圖案曝光用光之 傾斜角度0d來修正平面錯位即可。 並且，在特定之時間打開曝光用快門44時，來自燈31之 圖案曝光用光藉由準直鏡47而具有特定之傾斜角ed後被反 射，經由光罩Μ照射於基板W。藉此，光罩M之光罩圖案 被曝光轉印於基板W。 因此使+直鏡4 7變形，如圖4及圖5所示，被反射之圖 案曝光用光之傾斜角由“，變更為“，藉此由線寬p，倍率修 正為線寬1?之光罩圖案被轉印於基板W，因光罩Μ或基板W 伸縮之平面錯位被修正。 如上所述’依照本實施形態之近接曝光裝置及近接曝光 方法，因為照明光學系40係具有準直鏡47及照射角度變更 枝構7 1 ’该照射角度變更機構7丨係藉由使準直鏡47變形來 、艾更藉由準直鏡47所反射之圖案曝光用光之傾斜角度者； 故/、藉由變更率直鏡47所反射之光之傾斜角度，即可以任 意之倍率得到轉印圖案，可製造高解像度、高密度、且高 121208.doc -15- 200813648 精度之基板w。 斜角2為藉由調整準直鏡47之倍率修正只係藉由光之傾 照射卩&與移動積分器之先前之倍率修正相比較， …、，、,之照度波動、偏差小，可以進行更均勻之倍率修 正’並且曝光精度亦可同時修正。 > 再者’因為倍率修正可以葬由 整，及與基㈣之間隙調 、曰由+直鏡叼所反射之圖案曝光用光之傾斜 ΟThe illumination optical system 40 includes, for example, a high-pressure mercury lamp 41, which is a light source for ultraviolet irradiation, and a concave mirror u that collects light irradiated from the high-pressure mercury lamp 41, and two kinds of optical integrals that are disposed in the vicinity of the focus of the concave mirror 42 The flat mirror 45 for changing the optical path direction, the cymbal and the collimator mirror 47, and the exposure control shutter 44 that is disposed between the plane mirror 45 and the optical integrator 43 to open and control the illumination path. Further, when the exposure control shutter 44 performs the opening control during exposure, the light irradiated from the high pressure mercury lamp 41 is held by the optical mask 光 of the reticle stage 10 through the optical path shown in FIG. 1 or even held on the substrate stage 20 The surface of the substrate W is irradiated with light for pattern exposure, and the mask pattern of the mask is exposed and transferred onto the substrate W. The collimator mirror 47 is a mirror that reflects light irradiated from the high pressure mercury lamp 41 and converts it into substantially parallel light (more specifically, light having a tilt angle of a specific irradiation angle of one d), and is formed into a concave reflecting surface. The back surface 47b of the 47a, the A is deformed by the collimator mirror 47 to change the irradiation angle changing mechanism 71 of the tilt angle 0d, and the irradiation angle changing mechanism 71, as shown in Fig. 4, for example, using a ball screw mechanism or fluid pressure stretching or squeezing The support member 73 of the back surface 47b of the collimator mirror 47 is supported by 121122.doc -13-200813648, and the collimator mirror 47 is deformed, thereby changing the tilt angle θά. The control device 70, as shown in FIG. 3, is provided with an input interface circuit 7a having detection signals for reading from the alignment camera 18, the gap sensor 17, and the laser interferometers 63, 64, 65. A/D conversion function as a detection value; arithmetic processing device 7B; memory device 7〇c such as ROM and RAM; and output interface circuit 70d, which is obtained by the arithmetic processing device 7〇b The control signal is output to the reticle position adjusting mechanism 13, the substrate moving mechanism 22, the redundant shaft squeezing mechanism 52, the exposure control shutter 44, and the irradiation angle changing mechanism 71. The control device 70 basically controls the shutter opening control of the illumination optical system 40, the feed control of the substrate moving mechanism 22, the calculation of the segment feed error amount, and the correction amount in the alignment adjustment using a sequence of a microcomputer or a program device. The drive control of the z-tilt adjustment mechanism 27, the drive control of the illumination angle f changing mechanism 71, the driving of almost all of the actuators incorporated in the apparatus, and the specific arithmetic processing are performed. In the segmented proximity exposure apparatus PE constructed as described above, the well control device 70 is in accordance with the alignment camera 18 in a state where the mask is held & the mask holding frame 12 and the substrate w are held by the substrate holding portion 2 The detection signals of the gap sensor 17 and the laser interferometers 63, 64, 65 drive the control mask position adjusting unit 713 to align with the initial position of the mask μ with respect to the substrate holding portion 21, and drive the x-axis. The coarse motion mechanism 52 and the tilt adjustment mechanism 27 adjust the gap between the mask 51 and the substrate % to a specific gap, and are arranged close to each other. =, the control device 70 detects when the alignment camera 18 confirms the mark provided on the mask μ and the mark provided on the substrate w, according to the expansion and contraction by the mask 121208.doc -14-200813648 or the substrate W The plane misalignment amount e and the specific gap between the mask Μ and the opposite surface of the substrate W detected by the gap sensor i 7 § calculate the amount of deformation of the collimator mirror 47 required to correct the plane misalignment, so that the illumination angle changing mechanism 71 The movement causes the collimator mirror 47 to deform. Further, since the pattern exposure light reflected by the collimator mirror 47 has a specific tilt angle ed, the magnification of the mask pattern can be corrected by adjusting the specific gap g between the mask yoke and the substrate. Therefore, the specific gap g between the mask "and the substrate w and the tilt angle 0d of the pattern exposure light reflected by the collimator mirror 47 can be arbitrarily adjusted according to the amount of plane misalignment detected by the alignment camera 18. Further, when the exposure shutter 44 is opened at a specific time, the pattern exposure light from the lamp 31 is reflected by the collimator mirror 47 with a specific inclination angle ed, and is reflected by the mask Μ The substrate W. Thereby, the mask pattern of the mask M is exposed and transferred onto the substrate W. Therefore, the +straight mirror 47 is deformed, as shown in FIGS. 4 and 5, the tilt angle of the reflected pattern is reflected by "Change to ", whereby the mask pattern corrected to the line width 1 by the line width p and the magnification is transferred to the substrate W, and the plane misalignment due to the expansion or contraction of the mask or the substrate W is corrected. In the proximity exposure apparatus and the proximity exposure method of the present embodiment, the illumination optical system 40 includes the collimator mirror 47 and the irradiation angle changing structure 7 1 '. The irradiation angle changing mechanism 7 is configured to deform the collimator mirror 47. Ai is exposed by the pattern reflected by the collimator mirror 47 The angle of inclination of the light is used; Therefore, by changing the inclination angle of the light reflected by the straight mirror 47, the transfer pattern can be obtained at any magnification, and high resolution, high density, and high height can be produced 121208.doc -15- 200813648 Precision substrate w. Angle 2 is adjusted by adjusting the magnification of the collimator 47 only by the tilting of the light amp & compared with the previous magnification correction of the moving integrator, ..., illuminance Fluctuation, small deviation, can be more uniform magnification correction 'and the exposure accuracy can be corrected at the same time. > Again' because the magnification correction can be buried, and the gap between the base (4) and the 直 is reflected by the + straight mirror The pattern of exposure light tilt Ο
==二:’隙之控制較ί前緩和，可以期待縮短產距 阿衣σ口良率。又，藉由適用如本實施形態之倍率 2，可以防止以基板或光罩之伸縮引起之曝光錯位，可 一定程度緩和溫度管理之條件來進行曝光轉印。 藉由適宜設定準直鏡 不僅可進行倍率修 又’本發明之照射角度變更機構71 47之反射面47a之各位置之變形量， 正’亦可進行形狀修正。 、，又’本實施形態中，丨了修正因光罩M或基板w伸縮之 平面錯位’使用照射角度變更機構71變更藉由準直鏡47所 反射之光之傾斜角纟’但亦可適宜使用於倍率修正、形狀 修正光罩之光罩圖案之情形’可轉印不侷限於光軍之曝光 圖案間距之任意線寬、形狀之曝光圖案。 再者’本實施形態中，係藉由使準直鏡〇變形來變更傾 斜角ed，但既可藉由移動（水平移動或旋轉移動）準直鏡〇 來變更傾斜角ed，亦可組合變形及移動來進行。 此外，照明光學系只要係至少具有準直鏡及照射角度變 更機構之構成者即可，並不限定於本實施形態。 12I208.doc -16- 200813648 (第2實施形態） 下面’炫就本發明之第2實施形態之近接曝光裝置及近 接曝光方法苓照圖式進行詳細說明。並且，對於與第i實 施形態同等部分賦予相同符號而省略或簡略其說明。 本實施形態之分段式近接曝光裝置PE，在照明光學系4〇 及控制裝置70上與第1實施形態不同。亦即，如圖6所示， 本實施形態之照明光學系40在不具有照射角度變更機構71 (、 之方面與第1貫施形態不同，又，如圖7所示，控制裝置70 你具備計時器72方面與第1實施形態不同w 其次，茲就使用上述構成之分段式近接曝光裝置pE，將 描繪於光罩Μ之光罩圖案曝光轉印於基板w之第2實施形態 之動作’參照圖8之流程圖進行說明。 此處，上述之分段式近接曝光裝置pE雖係藉由複數之步 钵進行近接曝光，但设定在每一步驟係進行圖8所示之曝 光動作者。並且，在進行圖8之曝光動作前，設定從照射 I 光學系40之光源照射光，並且曝光控制用快門44關控制。 又，設定特定之曝光時間為1〇秒，計時器72歸零。 首先，進行曝光動作前，控制裝置灣據對準照相機18 &雷射干涉計63、64、65之檢測信號，驅動控制光罩位置 調整機構13對準相對於基板保持仙之光罩Μ之初始位 置。 <此處’猎由對準照相機18確認出設置於光罩Μ之標記與 设置於基板w之標記時，檢測因基板w伸縮之基板w平面 錯位量（步驟S2)。 121208.doc 200813648 其次，控制裝置70根據在步驟S2所檢測之平面錯位量， 异出光罩Μ與基板W之相對面間之特定間隙§(步驟以），一 面根據間隙感測裔1 7之檢測h號驅動控制傾斜調整機構 27，微調光罩馗與基板w間之間隙（步驟S6)。並且，本實 施形態中特定之間隙g定為1〇〇〜3〇〇 μηι。 、’k之，進行曝光控制用快門44之開控制（步驟s8)，進行 計時器72之計時（步驟1〇)。藉此，在保持特定間隙§相互近== Two: The control of the gap is moderated compared to ί, and it can be expected to shorten the yield of the clothing. Further, by applying the magnification 2 as in the present embodiment, it is possible to prevent the exposure misalignment caused by the expansion and contraction of the substrate or the mask, and to perform the exposure transfer while relaxing the conditions of the temperature management to some extent. By appropriately setting the collimator lens, not only the magnification correction but also the amount of deformation of each position of the reflection surface 47a of the irradiation angle changing mechanism 71 47 of the present invention can be corrected. Further, in the present embodiment, the plane misalignment by the mask M or the substrate w is corrected. The inclination angle 纟' of the light reflected by the collimator mirror 47 is changed by the irradiation angle changing mechanism 71. In the case of the reticle pattern of the magnification correction and the shape correction reticle, it is possible to transfer an exposure pattern of any line width and shape which is not limited to the interval of the exposure pattern of the ray. In the present embodiment, the inclination angle ed is changed by deforming the collimating mirror ,. However, the tilt angle ed may be changed by moving (horizontal movement or rotational movement), or the combination may be modified. And move to proceed. Further, the illumination optical system is not limited to the embodiment as long as it has at least a configuration of a collimating mirror and an irradiation angle changing mechanism. 12I208.doc -16- 200813648 (Second Embodiment) Hereinafter, a proximity exposure apparatus and a proximity exposure method according to a second embodiment of the present invention will be described in detail with reference to the drawings. The same components as those in the i-th embodiment are denoted by the same reference numerals, and their description will be omitted or simplified. The segmented proximity exposure apparatus PE of the present embodiment is different from the first embodiment in the illumination optical system 4A and the control device 70. That is, as shown in FIG. 6, the illumination optical system 40 of the present embodiment does not have the irradiation angle changing mechanism 71 (and is different from the first embodiment), and as shown in FIG. 7, the control device 70 has The timer 72 is different from the first embodiment. Next, the second embodiment of the photomask pattern drawn and transferred onto the substrate w by the segmented proximity exposure device pE having the above configuration is used. 'Refer to the flowchart of Fig. 8. Here, the above-described segmented proximity exposure device pE performs proximity exposure by a plurality of steps, but sets the exposure operation shown in Fig. 8 at each step. Further, before the exposure operation of Fig. 8, the light source is irradiated from the light source of the illumination I optical system 40, and the exposure control shutter 44 is turned off. Further, the specific exposure time is set to 1 second, and the timer 72 is returned. First, before performing the exposure operation, the control device bay is aligned with the detection signals of the camera 18 & laser interferometers 63, 64, 65, and the drive control reticle position adjustment mechanism 13 is aligned with the substrate to maintain the sacred mask. Initial When the alignment camera 18 confirms the mark provided on the mask 与 and the mark provided on the substrate w, the amount of misalignment of the substrate w plane due to the expansion and contraction of the substrate w is detected (step S2). 200813648 Next, the control device 70 drives the specific gap § between the opposite faces of the mask Μ and the substrate W according to the amount of plane misalignment detected in step S2, and drives the detection of the h signal according to the gap sensing The tilt adjustment mechanism 27 is controlled to finely adjust the gap between the mask 馗 and the substrate w (step S6). Further, the gap g specified in the present embodiment is set to 1 〇〇 to 3 〇〇 μηι. With the opening control of the shutter 44 (step s8), the timer 72 is counted (step 1 〇). Thereby, the specific gap is kept close to each other.
接配置光罩Μ與基板W之狀態下，直至到達第」曝光時間 (本實施形態中係曝光時間一半，為5秒）為止；光罩m之光 罩圖案藉由照射光學系40被曝光轉印於基板…上（第i曝光 步驟）。此處，在第i曝光步驟藉由照射光學系4〇所照射之 每1照射之光量α，設定為較塗佈於基板貿之感光劑完全感 光之光量之閾值γ低（參照圖9、1〇)。特別係本實施形態 中，因為將在後述之第2曝光步驟藉由照射光學系4〇所照 射之每1照射之光量β設定為與第丨曝光步驟之光量以相等， 故閾值γ宜設定為l 5〇c。 然後，判定計時器72是否到達5秒（步驟S12)，當計時器 72到達5秒時進行至步驟SM，當計時器未到達^秒時進行 至步驟S10。步驟S14中進行曝光控制用快門料之關控制。 繼之’在停止曝光轉印之狀態下，根據在步驟s4所算出 特^間隙g，藉由光罩位置調整機構工3之驅動使光罩Μ 沿水平方向微小移動特定量⑽光罩Μ之圖案間隔窄）（步 ㈣16) °此時之微小移動宜根據算出之間隙g沿X方向、y 向同日寸同里移動’但並不限定於此。根據藉由曝光所形 121208.doc 200813648 成之圖案，亦有_ 同時π曰/ 之情形或莫如沿χ方向、y方向 问時冋ϊ移動好之情形。 —^ 、仃*光控制用快門44之開控制（步驟S 1 8)，進 二二器72之計時(步驟S2G)。藉此’在保持特定目 =接^置光罩Μ與基板w之狀態下，直至到達第2曝光時 pt、貫施形態中係從特定曝光時間之帅減去第1曝光時 —心之5秒）為止’光罩M之曝光圖案藉由照射光學系40以 "Λ 照射之光量β (，被曝光轉印於基板〜(第2曝光步 驟）。 此後，判疋什時器72是否到達曝光時間之10秒（步驟 S22)，當計時器到達10秒時進行至步驟S24，#計時器未 到達10私日可進订至步驟S2〇。步驟S24中進行曝光控制用快 門44之開控制。此後，進行至步驟似，進行計時器w之 歸零，結束一步驟之曝光動作（多重曝光）。 其次，一面參照圖9、10對本實施形態之作用效果進 說明。 因作用於保持在基板保持部21之基板…之處理液、熱、 或吸盤等使基板…產生伸縮。該基板冒伸縮後直接進行曝 光轉印日守，光罩Μ之曝光圖案被轉印於自欲轉印之特定位 置偏移之位置。 因此，本實施形態中，利用來自照明光學系4〇之圖案曝 光用光保持特定之照射角（傾斜角Θ)，經由光罩Μ之曝光圖 案向基板W照射之點，並設定根據平面錯位量之特定間隙 g ’藉此與欲轉印之特定位置相配合進行曝光轉印。 121208.doc -19- 200813648 例如’如圖9⑷所示，在基板|無伸縮時，以特定之間 隙g進行曝光轉印；如圖10⑷所示，基板w延伸時，根據 平面錯位量使間隙大於間隙g而成為特定之間隙g，後進行曝 先轉印”乂間隙g’轉印於基板W之轉印圖案之線寬p2,藉 由傾斜角Θ較光罩圖案之線寬pi大。 另-方面’改變間隙§進行曝光轉印時，轉印於基板w 之_生變化。因此，本實施形態中1 了修正該線寬 Ο 之fc化進行多重曝光。 亦即，如圖9(b)所示，在基㈣無伸縮時之特定間搜 將水平移動步驟之特定量δ定為G，在第光步驟中曝光 轉印之轉印圖案上重疊轉印第2曝光步驟中之轉印圖案。 藉此’如圖9⑷所示，在顯影後之基板^可以得到對應 於光罩Μ之圖案間隔P1之線寬ρι之圖案區域。 另一方面，如圖10(b)所示，在基板W產生延伸時，因為 係使光㈣按照較間隙g大之特定間隙g，之特定量s水平移 動後進行多重曝光’故相對於第鳟光步驟中曝光轉印之 曝光圖案，第2曝光步驟中之光㈣案在錯位特定量δ之狀 態下重疊轉印。藉此’如圖1〇⑷所示，在顯影後之基板W 上’在光量超過閾值γ之部》，可在料位置得到對應於 光罩Μ之圖案間隔P1之線寬ρι之圖案區域。 並且，圖8中對基❹延伸時進行了說明，而基㈣伸縮 時，只要設定較基板W未伸縮時之間隙§小之間隙，並在 曝光轉印途中進行按照該間隙之特定量之水平方向移動即 可0 121208.doc -20- 200813648 又’對於光罩Μ之伸縮，亦可藉由設定間隙並在曝 光轉印途中進行按照該間隙之特定量之水平方向移動’防 止以光罩Μ之伸縮引起之曝光錯位。 再者，照射光學系40之光源31之氺旦^ 尤摩1之先里可控制，既可使第 1曝光步驟與第2曝光步驟中之光量 ^ 冗里α β不同，或者亦可使 之如本實施形態相等。 . 1且’轉印圖案線寬之調整，亦可不進行曝光量之調 〇 整，而將每一次之曝光量設定為光阻之感度進行多重曝 光。亦即，第1曝光步驟中，如圖 、 τ $间h(a)所不，使用透光部 刀之線寬為P 1、遮光部分之綠宮炎 、 之線見為P3之光罩Μ，以與感光 劑所感光之光量之閾值γ相等每 3 可1…、射之光2；α (α=γ)進行 曝光轉印。藉此，可以得到堍宮 片 付引綠ΧΡ1之轉印圖案。並且，為 了簡略化圖示’藉由傾斜角㊀所咸 V月W所玖先之部分之光量定為〇。 其次’在第2曝光步驟中，士岡 — 士圖11(b)所示，使光罩w水 平移動特定量δ’同樣，以與感光劑所感光之光量之間值丫 〇相專之每1照射之光量α (α=γ)進行曝光轉印。藉此，照射 於感光劑之光置分佈，成為楚卩成 成為弟2曝光步驟之轉印圖案相對 於弟1曝光步驟之轉印圖幸 口茶錯位特疋而重疊之形狀。 藉此，負型感光劑時，石同】 f如圖u(c)所示，在顯影後之基板 W上可以得到在圖案蠄 之線寬P1上加以特定量δ之線寬Ρ1 + δ 之轉印圖案。另一方面，1：舟I 4 1 面正型感光劑時，如圖ll(d)所示， 可以得到線寬Ρ3-δ之轉印圖案。 如上所述，依照本竇施形能 ^怨之近接曝光裝置及近接 方法，因為係使ζ-傾斜梦私' 、斜私動城構27沿上下方向移動，以便 121208.doc -21 - 200813648 為根據對準照相機18所檢敎平㈣位量之特定間隙 g’並且在特定之曝光時間途中停止曝光轉印之狀能/、 峨寺定之間隙成光罩移動機構13沿水平方向移：特定 -，故可不將照射光學系40變為複雜之構成，而防 板w或光罩M之伸縮引起之曝光錯位，製造高精度且低： 本之基板。又’因為可以防止以基板…或光罩乂之伸縮引 起之曝光錯位’故可在一定程度緩和溫度管理之條件 ΓWhen the mask Μ and the substrate W are placed, until the first exposure time (5 seconds in half of the exposure time in the embodiment); the mask pattern of the mask m is exposed by the illumination optical system 40. Printed on the substrate... (i-exposure step). Here, in the i-th exposure step, the amount of light α per illumination irradiated by the irradiation optical system 4 is set to be lower than the threshold γ of the amount of light completely sensitized by the photosensitive agent applied to the substrate (see FIGS. 9 and 1). 〇). In particular, in the present embodiment, since the amount of light per one irradiation irradiated by the irradiation optical system 4 is set to be equal to the amount of light in the second exposure step in the second exposure step to be described later, the threshold γ should be set to l 5〇c. Then, it is judged whether or not the timer 72 has reached 5 seconds (step S12), when the timer 72 reaches 5 seconds, it proceeds to step SM, and when the timer has not reached ^ second, it proceeds to step S10. In step S14, the shutter control for the exposure control is controlled. Then, in the state where the exposure transfer is stopped, the mask Μ is slightly moved in the horizontal direction by a specific amount (10) of the mask according to the special gap g calculated in step s4 by the driving of the mask position adjusting mechanism 3. The pattern spacing is narrow (step (4) 16) ° The small movement at this time should be moved in the X direction and the y direction in the same direction according to the calculated gap g, but is not limited thereto. According to the pattern formed by exposure 121208.doc 200813648, there are also cases where _ simultaneous π曰/ is as good as moving along the χ direction and y direction. -^, 仃* control of the light control shutter 44 (step S18), timing of the second unit 72 (step S2G). By the way, in the state of holding the specific mask = the mask Μ and the substrate w, until the second exposure pt is reached, the first exposure is subtracted from the specific exposure time in the form of the lapse, and the heart is 5 The exposure pattern of the mask M is irradiated to the optical system 40 by the amount of light irradiated by the optical system 40 (subjected to the substrate to the second exposure step). Thereafter, it is determined whether or not the device 72 has arrived. 10 seconds of the exposure time (step S22), when the timer reaches 10 seconds, the process proceeds to step S24, where the # timer has not reached 10 private days, and the process can be advanced to step S2. In step S24, the opening control of the exposure control shutter 44 is performed. Thereafter, proceeding to the step, the timer w is reset to zero, and the exposure operation (multiple exposure) in one step is completed. Next, the operation and effect of the embodiment will be described with reference to Figs. The processing liquid, the heat, or the suction cup of the substrate of the holding portion 21 causes the substrate to expand and contract. After the substrate is stretched and contracted, the exposure and transfer are directly performed, and the exposure pattern of the mask is transferred to the specific image to be transferred. The position of the position offset. Therefore, In the present embodiment, a specific irradiation angle (inclination angle Θ) is maintained by the pattern exposure light from the illumination optical system 4, and the substrate W is irradiated through the exposure pattern of the mask ,, and the specific amount according to the plane misalignment amount is set. The gap g' is thereby subjected to exposure transfer in cooperation with a specific position to be transferred. 121208.doc -19- 200813648 For example, as shown in Fig. 9 (4), when the substrate|without expansion and contraction, exposure transfer is performed with a specific gap g As shown in Fig. 10 (4), when the substrate w is extended, the gap is larger than the gap g according to the amount of the plane misalignment, and becomes a specific gap g, and then the transfer transfer "乂 gap g' is transferred to the transfer pattern of the substrate W. The width p2 is larger than the line width pi of the mask pattern by the tilt angle 另. The other aspect 'changes the gap § when the exposure transfer is performed, the transfer is transferred to the substrate w. Therefore, in the present embodiment, the correction is made. The line width Ο is subjected to multiple exposures. That is, as shown in FIG. 9(b), the specific amount δ of the horizontal movement step is set to G in the specific interval when the base (four) is not expanded and contracted, in the light step. Overprint transfer second exposure step on transfer transfer transfer pattern In the transfer pattern of the film, as shown in Fig. 9 (4), the substrate area after development can obtain a pattern area corresponding to the line width ρ of the pattern gap P1 of the mask 。. On the other hand, as shown in Fig. 10(b) As shown in the figure, when the substrate W is stretched, since the light (4) is moved by a specific gap g which is larger than the gap g, the specific amount s is horizontally moved and then subjected to multiple exposures, so the exposure pattern of the exposure transfer in the third light step is opposite. The light (4) in the second exposure step is superimposed and transferred in a state in which the amount of shift δ is shifted. Thus, as shown in FIG. 1A (4), on the substrate W after development, 'the amount of light exceeds the threshold γ', A pattern area corresponding to the line width ρι of the pattern interval P1 of the mask Μ can be obtained at the material position. Further, in FIG. 8, the base is extended, and when the base (four) is expanded and contracted, a gap smaller than the gap when the substrate W is not stretched and contracted is set, and a level corresponding to the gap is performed during the exposure transfer. The direction can be moved. 0 121208.doc -20- 200813648 In addition, for the expansion and contraction of the mask, it is also possible to prevent the mask from being moved by setting the gap and moving in the horizontal direction according to the specific amount of the gap during the exposure transfer. The exposure caused by the expansion and contraction is misaligned. Furthermore, the light source 31 of the illumination optical system 40 can be controlled by the first time, and the light quantity in the first exposure step and the second exposure step can be different, or can be made. This embodiment is equivalent. 1 and the adjustment of the line width of the transfer pattern may be performed without performing the adjustment of the exposure amount, and the exposure amount of each time is set to the sensitivity of the photoresist for multiple exposure. That is, in the first exposure step, as shown in the figure, τ $ between h (a), the line width of the blade using the light transmitting portion is P 1 , the green palace inflammation of the light shielding portion, and the line of the line P3 are 光The exposure and transfer are performed every three times with respect to the threshold γ of the amount of light sensitized by the sensitizer, and the light 2; α (α = γ). By this, it is possible to obtain a transfer pattern of the 堍宫片. Further, in order to simplify the illustration, the amount of light which is preceded by the inclination angle of a salty V month is defined as 〇. Next, in the second exposure step, as shown in Fig. 11(b), the mask w is horizontally moved by a specific amount δ', and the value between the amount of light sensitized by the sensitizer is used. The amount of light α (α = γ) of the irradiation is subjected to exposure transfer. Thereby, the light distribution by the sensitizer is formed into a shape in which the transfer pattern of the exposure step of the second embodiment is overlapped with respect to the transfer pattern of the exposure step of the younger one. Therefore, in the case of the negative sensitizer, as shown in FIG. 5(c), a line width Ρ1 + δ of a specific amount δ is applied to the line width P1 of the pattern 在 on the developed substrate W. Transfer pattern. On the other hand, in the case of the boat I 4 1 positive-type sensitizer, as shown in FIG. 11(d), a transfer pattern of line width Ρ3-δ can be obtained. As described above, according to the sinus shape, the proximity exposure device and the proximity method can be moved in the up and down direction, so that the 121208.doc -21 - 200813648 is According to the specific gap g' of the flat (four) position amount detected by the alignment camera 18, and the exposure transfer can be stopped in the middle of the specific exposure time, the gap of the mask is moved in the horizontal direction by the mask moving mechanism 13: specific - Therefore, the irradiation optical system 40 can be prevented from being complicated, and the exposure of the anti-plate w or the mask M can be misaligned, and the substrate can be manufactured with high precision and low precision. Further, since it is possible to prevent exposure misalignment caused by the stretching of the substrate or the mask ’, the temperature management condition can be alleviated to some extent Γ
曝光轉印。 人，依照本實施形態之近接曝光裝置及近接曝光方法， 因為藉由多重曝光可以減少由照射光學系4〇之每i照射之 光量，故可以大幅度地提高燈壽命。 (弟3實施形態） 其次，茲就本發明之第3實施形態之近接曝光裝置及近 接曝光方法參照圖12進行詳細說明。並且，對於與第2實 施形態同等部分賦予相同符號省略或簡略其說明。 本實施形態，在藉由控制裝置70所控制之間隙算出步驟 方面與第2實施形態不同。第3實施形態中，在圖8之步驟 s 6調整z-傾斜調整機構2 7，以便使光罩μ與基板W以特定 之平行度，且經由特定之間隙相對，但本實施形態中，因 基板W伸縮所產生之基板W之在各位置之平面錯位量不同 時，調整ζ-傾斜調整機構27，使基板保持部21相對於水平 方向、亦即光罩Μ之下面傾斜，以便使曝光轉印時之光罩 Μ與基板W間之特定間隙隨該基板W之在各位置之平面錯 位量而異。 121208.doc -22- 200813648 藉此，例如即使係在基板w延伸為如圖12所示之梯形形 狀時’亦可在使梯形之下底側區域之間隙gi大於上底側： 區域之間隙g2之狀態下’與約實施形態同樣地進 曝光。 並且，其他曝光步驟係與第丨實施形態相同。 ΟExposure transfer. According to the proximity exposure apparatus and the proximity exposure method of the present embodiment, since the amount of light irradiated by the illumination optical system 4 can be reduced by multiple exposure, the lamp life can be greatly improved. (Embodiment 3) Next, a proximity exposure apparatus and a proximity exposure method according to a third embodiment of the present invention will be described in detail with reference to Fig. 12 . The same components as those in the second embodiment are denoted by the same reference numerals, and their description will be omitted. This embodiment differs from the second embodiment in the gap calculation step controlled by the control device 70. In the third embodiment, the z-tilt adjustment mechanism 27 is adjusted in step s6 of Fig. 8 so that the mask μ and the substrate W have a specific parallelism and are opposed to each other via a specific gap. However, in the present embodiment, When the amount of plane misalignment at each position of the substrate W generated by the expansion and contraction of the substrate W is different, the ζ-tilt adjustment mechanism 27 is adjusted so that the substrate holding portion 21 is inclined with respect to the horizontal direction, that is, the lower surface of the mask ,, so that the exposure is turned The specific gap between the photomask 印 and the substrate W at the time of printing varies depending on the amount of planar misalignment of the substrate W at each position. 121208.doc -22- 200813648 Thereby, for example, even when the substrate w is extended to a trapezoidal shape as shown in FIG. 12, the gap gi of the bottom side region under the trapezoid may be larger than the upper bottom side: the gap g2 of the region In the state of the invention, exposure is performed in the same manner as in the embodiment. Further, the other exposure steps are the same as those of the second embodiment. Ο
因此，依照本實施％態之近接曝光裝皇及近接曝光方 法’因為調整z-傾斜調整機構27使基板保持部叫目對於水 平方向傾斜，使得曝光轉印時之光罩M與基板㈣之特定 間隙隨該基板W之在各位置之平面錯位量而異；故即使在 基板W或光罩狀伸縮不均勻時亦可防止曝光之錯位，= 以製造高精度且低成本之基板。 並且，第2及第3實施形態中，曝光轉印中藉由光罩位置 調整機構之驅動使光罩邮水平方向微小移動，藉此進行 光罩Μ之水平方向移動，但即使係驅動基板台觀基板移 動機構22使基板料水平方向微小移動，亦可同樣奏效。 亦即，如圖13(a)所示，以未達光阻感度之照度幻進行 第1次曝光後，藉由基板移動機構22之位置控制移動特定 量δ。接著，如圖13(b)所示，藉由光源之光量控制以光阻 完全f光之照進行第2次曝光。此後，如圖13⑷所 不’藉由使曝光之基板…顯影，可以得到較光罩M之光罩 圖案之線寬P1更微細線寬（Ρ1_δ)之圖案。並且，即使直至 光阻完全感光之前，一面以振幅δ高速振動一面曝光亦可 知到同樣效果。又，以2維顯示曝光之基板w時如圖14。 又上述貝施形悲中，係組合間隙之控制及線寬之控制 121208.doc -23- 200813648 而進行 但亦可僅進行間隙之控 制。亦即 如圖1 5所示， 藉由將間隙g控制為任意量，可以 控制為寬度L’。該寬度l，可由光 出0 將寬度L之光罩圖案倍率 源之傾斜角Θ及間隙g算 並且’本發明並不限定於本實施形態’在不脫離本發明 宗旨之範圍内可適當變更。例如，第!實施形態、第2及第 3貝施形您在可貫施之範圍内亦可組合。 又，各實施形態中’茲就可進行2維分段進給之分段式 近接曝光裝置進行了說明，但亦可適用於進行丨維分段進 給之分段式近接曝光裝置或不進行分段進給之近接曝光裝 又’本實施形態中例示了在平面顯示器之曝光裝置適用 本發明之情形，但亦可代之在半導體之曝光裝置適用本發 明。 Λ 本申請案係基於2006年6月14曰提出申請之日本專利申 〇 請案（日本特願2006-164655)及2006年6月29日提出申嘖之 曰本專利申請案（曰本特願2〇〇6-179896)者，其内容在此處 作為參照而被納入。 [發明之效果] 依照本發明之近接曝光裝置及近接曝光方法，因為照射 機構具有準直鏡及照射角度變更機構，該照射角度變更機 構係進行準直鏡之變形及移動中之至少一者，變更藉由准 直鏡所反射之圖案曝光用光之照射角度者，故藉由變更藉 由準直鏡所反射之光之照射角度，可以得到任意倍 、、σ平之轉 121208.doc -24· 200813648 印圖案，可以製造高解像度、高密度、且高精度之基板。 又，與先前之倍率修正相比較更均句，且曝光精度亦可同 時修正。 又，依照本發明之其他近接曝光裝置及近接曝光方法， 因為使基板保持部與光罩保持部中之任一者沿上下方向浐 動，以便根據藉由檢測機構所檢測之平面錯位 L — 間隙，並且在特定之曝光時間中途停止曝光轉印 f、 下，根據特定之間隙使基板保持部與光罩保持部中之任一 者沿水平方向移動特定量’故可不將照射機構變更為複雜 ^構成’防止以基板或光罩之伸縮引起之曝光錯位，製造 南精度且低成本之基板。 ° 【圖式簡單說明】 圖1係用於說明本發明第丨實施形態之分割依次近接曝光 裝置之局部分解立體圖。 圖2係圖1所示之分割依次近接曝光裝置之正面圖。 Q 圖3係顯示本發明第丨實施形態之近接曝光裝置之控制裝 置之構成方塊圖。 圖4係用於說明本發明第1實施形態之近接曝光方法之作 用之圖。 圖5係用於說明本發明第1實施形態之近接曝光方法之作 用之圖。 ，圖6係用於說明本發明之第2實施形態之分割依次近接曝 光裝置之局部分解立體圖。 圖7係顯示本發明之第2實施形態之近接曝光裝置之控制 121208.doc -25- 200813648 裝置之構成方塊圖。 ，係本發明第2實施形態之近接曝光方法之流程圖。 :⑷至圖9⑷係用於說明本發明第2實施形態之 光方法之作用之圖。 圖10(a)至圖1 〇(c)係用於今' 曝光方法之作用2 本發明第2實施形態之近接 () =啦圖U⑷係用於說明本發明第2實施形 曝先方法之變形例之圖。 鞍 圖12係用於說明本發第 重要部位立體圖。 之近接曝光方法之 圖13(a)至圖13(c)係用於說明本表 光方法之作用之圖。 …之㈣例之近接曝 圖W係用於說明本發明之變形例之 之圖。 接+光方法之作用 圖15係用於說明本發明之變形例之近接 【主要元件符號說明】 法之圖。 12 光罩保持框（光罩保持部） 13 光罩位置調整機構（光罩移動; 17 間隙感測器 18 對準攝像機（錯位量檢測機構） 21 基板保持部 40 照明光學系（照射機構） 47 準直鏡 70 控制裝置 121208.doc •26- 200813648 71 照射角度變更機構 e 平面錯位量 g 間隙 Μ 光罩 ΡΕ 分段式近接曝光裝置 W 玻璃基板（被曝光材） 0d 傾斜角（照射角度） Γ、——— 121208.doc -27-Therefore, according to the present embodiment, the proximity contact embossing and proximity exposure method of the % state is because the adjustment of the z-tilt adjustment mechanism 27 causes the substrate holding portion to be tilted in the horizontal direction, so that the reticle M and the substrate (4) at the time of exposure transfer are specified. The gap varies depending on the amount of planar misalignment of the substrate W at each position; therefore, even when the substrate W or the mask-like expansion and contraction is uneven, the misalignment of the exposure can be prevented, and the substrate can be manufactured with high precision and low cost. Further, in the second and third embodiments, the exposure of the mask position adjusting mechanism causes the mask to be moved in the horizontal direction by the movement of the mask position adjusting mechanism, thereby moving the mask in the horizontal direction. The substrate moving mechanism 22 can slightly move the substrate material in the horizontal direction, and can also be effective. That is, as shown in Fig. 13 (a), after the first exposure is performed without the photoresist sensitivity, the specific amount δ is moved by the position control of the substrate moving mechanism 22. Next, as shown in Fig. 13 (b), the second exposure is performed by the light amount of the light source under the control of the photoresist with complete f light. Thereafter, as shown in Fig. 13 (4), by developing the exposed substrate, a pattern having a finer line width (Ρ1_δ) than the line width P1 of the mask pattern of the mask M can be obtained. Further, the same effect can be obtained even when the photoresist is irradiated at a high speed with an amplitude δ until the photoresist is completely exposed. Further, when the exposed substrate w is displayed in two dimensions, as shown in FIG. In addition, the above-mentioned Besch shape sorrow is controlled by the control of the combined gap and the control of the line width 121208.doc -23- 200813648 but only the gap can be controlled. That is, as shown in Fig. 15, by controlling the gap g to an arbitrary amount, it is possible to control the width L'. In the case of the present invention, the present invention is not limited to the scope of the present invention, and can be appropriately changed without departing from the spirit and scope of the invention. For example, the second embodiment and the second and third embodiments can be combined within a range that can be applied. Further, in each of the embodiments, the segmented proximity exposure device capable of performing two-dimensional segment feeding has been described, but it may be applied to a segmented proximity exposure device that performs the segmentation feed or not. In the present embodiment, the present invention is applied to an exposure apparatus for a flat panel display, but the present invention can be applied to an exposure apparatus of a semiconductor instead. Λ This application is based on a Japanese patent application filed on June 14, 2006 (Japan's special request 2006-164655) and a patent application filed on June 29, 2006 (Sakamoto's special request) 2〇〇6-179896), the contents of which are incorporated herein by reference. [Effects of the Invention] According to the proximity exposure apparatus and the proximity exposure method of the present invention, the illumination mechanism includes a collimator mirror and an illumination angle changing mechanism that performs at least one of deformation and movement of the collimator mirror. By changing the angle of illumination of the pattern exposed by the collimating mirror, by changing the angle of illumination of the light reflected by the collimating mirror, it is possible to obtain an arbitrary multiple, σ flat rotation 121208.doc -24 · 200813648 Printed patterns can be used to produce substrates with high resolution, high density, and high precision. Moreover, it is more uniform than the previous magnification correction, and the exposure accuracy can be corrected at the same time. Further, according to the other proximity exposure apparatus and the proximity exposure method of the present invention, the substrate holding portion and the mask holding portion are tilted in the up and down direction so as to be offset according to the plane L detected by the detecting mechanism. And the exposure transfer f is stopped in the middle of the specific exposure time, and the substrate holding portion and the mask holding portion are moved by a certain amount in the horizontal direction according to the specific gap. Therefore, the irradiation mechanism may not be changed to a complicated ^ It is configured to prevent exposure misalignment caused by stretching of the substrate or the reticle, and to manufacture a substrate with high accuracy and low cost. [Brief Description of the Drawings] Fig. 1 is a partially exploded perspective view for explaining a sequential sequential proximity exposure apparatus according to a third embodiment of the present invention. Fig. 2 is a front elevational view showing the sequential proximity exposure apparatus shown in Fig. 1. Fig. 3 is a block diagram showing the construction of a control device for the proximity exposure apparatus according to the embodiment of the present invention. Fig. 4 is a view for explaining the action of the proximity exposure method according to the first embodiment of the present invention. Fig. 5 is a view for explaining the action of the proximity exposure method according to the first embodiment of the present invention. Fig. 6 is a partially exploded perspective view for explaining the divided sequential proximity exposure apparatus according to the second embodiment of the present invention. Fig. 7 is a block diagram showing the configuration of a device for controlling a proximity exposure apparatus according to a second embodiment of the present invention 121208.doc - 25 - 200813648. A flowchart of a proximity exposure method according to a second embodiment of the present invention. (4) to (9) are diagrams for explaining the action of the optical method according to the second embodiment of the present invention. Fig. 10(a) to Fig. 1(c) are the functions of the present invention. The proximity () of the second embodiment of the present invention is for explaining the deformation of the second embodiment of the present invention. Illustration of the example. Saddle Figure 12 is a perspective view for explaining the most important part of the present invention. The proximity exposure method is shown in Fig. 13(a) to Fig. 13(c) for explaining the effect of the light method of the present invention. The (n) example of the proximity exposure Fig. W is a diagram for explaining a modification of the present invention. The function of the splicing + light method Fig. 15 is a diagram for explaining the proximity of the modification of the present invention. 12 Mask holding frame (mask holder) 13 Mask position adjustment mechanism (mask movement; 17 gap sensor 18 alignment camera (misalignment amount detection mechanism) 21 substrate holding unit 40 illumination optical system (illumination mechanism) 47 Collimation mirror 70 Control device 121208.doc •26- 200813648 71 Irradiation angle changing mechanism e Plane misalignment g gap Μ Photomask 分段 Sectional proximity exposure device W Glass substrate (exposure material) 0d Tilt angle (irradiation angle) Γ , --—— 121208.doc -27-