JP7309516B2 - EXPOSURE APPARATUS, PRODUCT MANUFACTURING METHOD, EXPOSURE METHOD, AND RECORDING MEDIUM - Google Patents

Description

The present invention relates to an exposure apparatus, an article manufacturing method, an exposure method, and a recording medium.

In the semiconductor manufacturing process, it is known that there is a tendency for the wafer (substrate) exposed by the exposure apparatus to be distorted due to processes such as resist coating, etching, heat treatment, film formation, and chemical mechanical polishing (CMP). It is
When exposing a wafer with such distortion, alignment marks or the like provided in the wafer plane are measured to acquire the distortion as position dependency within the wafer plane. Exposure parameters can be corrected from the results.
Also, in order to improve the throughput when correcting the exposure parameters according to such distortion, there is also known a method of correcting by measuring only the alignment marks and the like in the sample shot area within the wafer surface. .

Japanese Patent Application Laid-Open No. 2002-200003 discloses an exposure apparatus that evenly arranges sample shot areas on concentric circles in the wafer surface and corrects the distortion with high accuracy in order to correct the distortion occurring in the entire wafer.

Japanese Patent Application Laid-Open No. 2006-148013

The distortion that occurs in the entire wafer as described above occurs in a substantially concentric shape because the process by an apparatus other than the exposure apparatus is performed on the entire wafer at once, and also increases from the center of the wafer toward the outside. It is also known that there is a tendency
Therefore, from the viewpoint of efficiency of correction, it is important to arrange the sample shot areas in consideration of the occurrence tendency of such distortion.
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an exposure apparatus, an article manufacturing method, an exposure method, and a recording medium capable of efficiently correcting exposure parameters.

An exposure apparatus according to the present invention is an exposure apparatus that exposes a substrate, and includes a control unit, the control unit divides the surface of the substrate into a plurality of divided regions, and the plurality of divided regions are arranged along concentric circles. Each divided area has a truncated fan shape or fan shape and has the same area , the same number of sample shot areas are arranged in each divided area, and a predetermined point in each sample shot area is measured by the measuring unit. The exposure parameters of the exposure apparatus are determined based on the measurement results.

According to the present invention, it is possible to provide an exposure apparatus, an article manufacturing method, an exposure method, and a recording medium capable of efficiently correcting exposure parameters.

1 is a schematic diagram of an exposure apparatus according to a first embodiment; FIG. FIG. 4 is a diagram exemplifying the arrangement of shot areas and alignment marks provided on a wafer; FIG. 4 is a diagram showing the arrangement of sample shot areas on a wafer in a conventional exposure apparatus; 4 is a diagram showing the layout of sample shot areas on a wafer in the exposure apparatus according to the first embodiment; FIG. 4 is a flowchart showing a method of correcting exposure parameters in the exposure apparatus according to the first embodiment; FIG. 7 is a diagram showing a method of dividing a wafer in an exposure apparatus according to a second embodiment; The schematic diagram of the exposure apparatus which concerns on 3rd embodiment.

An exposure apparatus according to this embodiment will be described in detail below with reference to the accompanying drawings. Note that the drawings shown below may be drawn on a scale different from the actual scale in order to facilitate understanding of the present embodiment.

[First embodiment]
FIG. 1 shows a schematic diagram of an exposure apparatus 10 according to the first embodiment.
As shown in FIG. 1, an exposure apparatus 10 according to this embodiment includes a light source 1 and an illumination optical system 2 that guides exposure light emitted from the light source 1 to a reticle 3 (original). . The exposure apparatus 10 according to this embodiment also includes a projection optical system 4 that guides exposure light that has passed through the reticle 3 to a wafer 6 (substrate) placed on a wafer stage 7 (stage). Further, hereinafter, the two directions orthogonal to each other in the plane of the wafer 6 are defined as the x direction and the y direction, respectively, and the direction perpendicular to the plane of the wafer 6 is defined as the z direction.

Further, the exposure apparatus 10 according to the present embodiment includes an alignment scope 5 (measurement unit) for measuring alignment marks (not shown) patterned on the wafer 6, and an alignment scope 5 (measuring unit) on which the wafer 6 is mounted, and the wafer 6 is placed at an exposure position. and a wafer stage 7 to be driven.
The exposure apparatus 10 according to this embodiment also includes a controller 15 that controls the illumination optical system 2 , the projection optical system 4 , the alignment scope 5 and the wafer stage 7 .

The exposure apparatus 10 according to the present embodiment positions the wafer stage 7 during exposure based on the results of measuring the alignment marks, and moves the wafer so as to transfer the pattern formed (drawn) on the reticle 3 onto the wafer 6 . 6 is exposed.

FIG. 2 is a diagram exemplifying the arrangement of a plurality of shot areas 20 and a plurality of alignment marks 21 provided on the wafer 6. As shown in FIG.

When distortion occurs in the wafer 6 as shown in FIG. Measure the strain.
Then, the correction order is determined so that the correction residual, which changes according to the correction order when correcting the exposure parameters based on the measured distortion, is sufficiently small relative to the overlay management target value of the exposure apparatus 10 .

Note that the exposure parameters here are, for example, the driving position of the wafer stage 7, the optical performance of at least one of the illumination optical system 2 and the projection optical system 4, and the like.
Then, the sample shot areas are arranged according to the determined correction order.

3A and 3B are diagrams showing the layout of sample shot areas 31 on the wafer 6 in a conventional exposure apparatus.

Assume that the correction order N in both the x-direction and the y-direction is determined to be the third order. At this time, the positional deviation from the predetermined position (design position, nominal position) of the alignment mark 21 is fitted with a function including a cubic expression of x and a cubic expression of y.
Therefore, the number of coefficients for each of the x and y directions in the fitting, that is, the number of parameters N+1 is both four.
Therefore, in a conventional exposure apparatus, the wafer 6 is divided into a matrix 30 of 4 rows and 4 columns, as shown in FIG. 3(a), for example.
Then, the sample shot areas 31 are arranged so that one is provided for each divided area 32 of the matrix 30 .

Also, if the correction orders N in both the x and y directions are determined to be fifth, the number of parameters N+1 in both the x and y directions is six.
Therefore, in a conventional exposure apparatus, the wafer 6 is divided into a matrix 30 of 6 rows and 6 columns, as shown in FIG. 3(b), for example.
Then, the sample shot areas 31 are arranged so that one is provided for each divided area 32 of the matrix 30 .

In the exposure apparatus, exposure processing for the wafer 6 is performed in units of shot areas according to exposure parameters defined by an orthogonal coordinate system. Easy to think.
However, as described above, many processes such as resist coating, etching, heat treatment, film formation, CMP, etc. tend to distort the entire wafer 6 concentrically and outward from the center.
Therefore, it is necessary to take this tendency into consideration when arranging the sample shot areas according to the predetermined correction order.

Therefore, in the exposure apparatus 10 according to the present embodiment, the wafer 6 is concentrically divided into a plurality of regions in the circumferential direction of each concentric circle, thereby obtaining divided regions corresponding to the conventional matrix 30. .
As a result, the sample shot areas can be arranged so as to spread in the plane of the wafer 6, and the concentric distortion caused by the pre-exposure process can be corrected by arranging fewer sample shot areas. can.

4A, 4B, and 4C are diagrams showing the arrangement of sample shot areas 40 on the wafer 6 in the exposure apparatus 10 according to this embodiment.
FIG. 5 is a flowchart showing a method of correcting exposure parameters such as the driving position of the wafer stage 7 and the optical performance of at least one of the illumination optical system 2 and the projection optical system 4 in the exposure apparatus 10 according to this embodiment. .

In the exposure apparatus 10 according to this embodiment, first, the alignment marks 21 provided in all the shot areas 20 on the predetermined wafer 6 are measured in advance. Then, the necessary correction order N is determined from the obtained measurement result and the overlay accuracy required in the exposure process (step S1).
In step S1, instead of the measurement result of the alignment mark 21, the necessary correction order N may be determined using the result of the exposure process previously performed on the predetermined wafer 6, that is, the overlay accuracy.

Next, based on the necessary correction order N, the concentric circle division number (the number of concentric circles) p and the area division number between concentric circles (the number of divisions in the circumferential direction of the area between the concentric circles) s are set (step S2). .
Then, the sample shot areas 40 are arranged so that one is provided in each divided area 45 (step S3).
However, depending on the shape and size of the divided area 45 , there are divided areas 45 that do not include the shot area 20 .

Here, regarding the values of the concentric circle division number p and the concentric circle area division number s, among the number N+1 of parameters in the x direction and the y direction for the correction order N, the x direction and the y direction are mutually symmetrical. It is determined according to the number of independent parameters (N+1)(N+2)/2.
Also, the sample shot area 40 is set to the shot area 20 including the alignment mark 21 closest to the geometric center (center of gravity) of the figure of each divided area 45 in order to see the average distortion occurring in each of the divided areas 45. set.
Also, when a plurality of alignment marks 21 are provided in the shot area 20 , the alignment marks 21 provided at the same position in each shot area 20 are selected to arrange the sample shot area 40 .

In the exposure apparatus 10 according to the present embodiment, for example, it is assumed that both the correction orders N in the x-direction and the y-direction are determined to be the third order. At this time, since the number of independent parameters is 10, as shown in FIG. do.
Further, for example, if the correction order N in the x and y directions is determined to be fifth, the number of independent parameters is 21, so as shown in FIG. 2. 24 divided areas are set with the number of divided areas between concentric circles s=12.

The above division is merely an example. For example, 36 division areas are set with the concentric circle division number p=3 and the concentric circle area division number s=12 shown in FIG. 4(c). Therefore, the concentric circle division number p and the concentric circle area division number s may be increased.

Here, in the exposure apparatus 10 according to the present embodiment, there are fan-shaped and truncated fan-shaped divided regions.
For example, as shown in FIG. 4(a), the surface of the wafer 6 having a radius R is equally divided into six in the circumferential direction, that is, six hatched sectors 46 having a central angle θ of 60° are formed. When included, sectors and truncated sectors are defined as follows.

That is, if the concentric circle division number p=2, the sector 46 can be divided into a sector 47 with radius R/2 and central angle θ=60°, and the remaining truncated sector 48 .
The truncated sector 48 is defined as the sector 46 having a radius R and a central angle θ of 60°, excluding the sector 47 having a radius R/2 and a central angle θ of 60°. Let us define it as a truncated sector with an angle θ=60° and denote it as S(60°, RR/2).

Therefore, in the exposure apparatus 10 according to the present embodiment, it can be said that the sector and the truncated sector, which are the divided regions, have the same central angle.

Then, the alignment marks 21 (predetermined locations) (not shown) provided in each sample shot area 40 are measured (step S4).
Then, by fitting the measurement results (measurement positions) using the following equation (1), the coefficients a _i (i=0, 1, . . . , N) and b _j (j=0, 1, . ).

Then, the positional deviation Δxy(x, y) from the predetermined position (design position) of the alignment mark 21 in the first cross section parallel to the wafer surface at each position of the wafer 6 is calculated.
Δxy(x, y) thus calculated corresponds to strain Δxy(x, y) in the first cross section parallel to the wafer surface at each position of the wafer 6 .

Then, the exposure parameters in the exposure apparatus 10 are corrected (determined) according to the calculated distortion Δxy(x, y) (step S5).
In other words, this correction corresponds to transforming the coordinate system when exposing the wafer 6 in the exposure apparatus 10 .
The exposure parameters to be corrected include, but are not limited to, the driving position of the wafer stage 7 and the optical performance of at least one of the illumination optical system 2 and the projection optical system 4 .

In the exposure apparatus 10 according to the present embodiment, the method of dividing the wafer 6 into a plurality of concentric circles is set so that the intervals between adjacent concentric circles are equal to each other.
In other words, in the exposure apparatus 10 according to the present embodiment, it can be said that the sector and the truncated sector, which are the divided regions, have the same diameter.

That is, when the radius of the wafer 6 is R, and each concentric circle divided into p _pieces is labeled 1, 2, 3, . , is represented by the following equation (2).

As described above, in the present embodiment, first, a plurality of divided regions 45 are arranged along concentric circles according to the determined correction order, and each divided region 45 is truncated fan-shaped or fan-shaped and has the same center angle. The surface of the wafer 6 is divided into a plurality of divided areas 45 so as to have . The same number of sample shot areas 40 are arranged in each divided area 45 .
As a result, the exposure parameters can be corrected with a small number of sample shot areas 40 arranged in accordance with the distortion that occurs on the wafer 6 due to the process performed by an apparatus other than the exposure apparatus 10 .
In other words, in the exposure apparatus 10 according to the present embodiment, the sample shot area 40 is arranged on the wafer 6 so as to be close to the result obtained by measuring all the alignment marks provided in the plane of the wafer 6 and correcting the distortion. They are arranged so that they spread out in the plane.

Note that in the exposure apparatus 10 according to the present embodiment, the wafer 6 is divided so that the distances between adjacent concentric circles are equal to each other as shown in Equation (2), but the present invention is not limited to this. . That is, even if the wafer 6 is divided into a plurality of concentric circles based on other conditions, the effects of this embodiment can be obtained.
Further, in the exposure apparatus 10 according to the present embodiment, the correction orders N in the x direction and the y direction are set to be the same. I don't mind.

Further, in the exposure apparatus 10 according to the present embodiment, one sample shot area 40 is provided for each divided area 45, but this is not restrictive. It is also possible to provide as many sample shot areas 40 as there are.
Moreover, although the alignment mark 21 provided in each shot area 20 is measured in the exposure apparatus 10 according to the present embodiment, the present invention is not limited to this. For example, when the alignment mark 21 is provided outside each shot area 20, the alignment mark 21 corresponding to each shot area 20 may be measured.

[Second embodiment]
FIG. 6 is a diagram showing a method of dividing the wafer 6 in the exposure apparatus according to the second embodiment.
The exposure apparatus according to the present embodiment has the same configuration as the exposure apparatus 10 according to the first embodiment, except for the method of dividing the wafer 6. Therefore, the same reference numerals are given to the same members. explanation is omitted.

In the exposure apparatus according to the present embodiment, when the wafer 6 is divided into concentric circles, the area of each divided area 45, that is, the sector and the truncated sector, which are the divided areas 45, is set to be equal to each other.
In other words, in the exposure apparatus according to this embodiment, the surface of the wafer 6 is divided into a plurality of concentric circles so that the areas included between adjacent concentric circles are equal to each other.

That is, similarly to the exposure apparatus 10 according to the first embodiment, the radius of the wafer 6 is R, and each of p divided concentric circles is labeled 1, 2, 3, . , the distance from the center O to the concentric circle m is _rm .

At this time, the exposure apparatus according to the present embodiment divides the surface of the wafer 6 into a plurality of concentric circles so as to satisfy the following equation (3).

That is, in the exposure apparatus according to this embodiment, the distance _rm from the center O to the concentric circle m should be set so as to satisfy the following equation (4).

In the exposure apparatus according to the present embodiment, after dividing the wafer 6 into concentric circles in the manner described above, each concentric circle is divided into a plurality of divided areas, and each divided area is divided into a plurality of divided areas, similarly to the exposure apparatus 10 according to the first embodiment. A sample shot area 40 is arranged for each area.
Then, alignment marks (not shown) provided in each sample shot area 40 are measured. Then, by fitting the measurement results (measurement positions) using the above equation (1), the coefficients a _i (i=0, 1, . . . , N) and b _j (j=0, 1, . ).

Then, the distortion Δxy(x, y) in the first cross section parallel to the plane at each position of the wafer 6 is calculated, and the exposure parameters in the exposure apparatus 10 are corrected according to the calculated distortion Δxy(x, y). (decide.

In the exposure apparatus according to this embodiment, by dividing the wafer 6 into a plurality of areas in the manner described above, the sample shot areas 40 can be evenly distributed on the wafer 6 .
In other words, in the exposure apparatus according to this embodiment, more sample shot areas 40 can be arranged on the outer peripheral side of the wafer 6 than in the exposure apparatus 10 according to the first embodiment.
As a result, in the exposure apparatus according to the present embodiment, it is possible to more reliably grasp the tendency of distortion in the vicinity of the outer peripheral portion of the wafer 6 where large distortion occurs.

[Third Embodiment]
FIG. 7 shows a schematic diagram of an exposure apparatus 70 according to the third embodiment.
Note that the exposure apparatus 70 according to the present embodiment has the same configuration as the exposure apparatus 10 according to the first embodiment, except that the optical system for focus measurement is provided. Numbers are assigned and explanations are omitted.

As shown in FIG. 7, an exposure apparatus 70 according to the present embodiment includes a light projecting unit 8 that projects focus measurement light onto a wafer 6, and receives focus measurement light from the wafer 6. and a light receiving portion 9 .
An optical system for focus measurement (measurement unit) is composed of the light projecting unit 8 and the light receiving unit 9 .
As a result, the exposure apparatus 70 according to the present embodiment can measure the step of the pattern provided on the wafer 6 (height in the z direction at each position in the xy plane).
If the wafer 6 is not provided with a pattern, the steps on the underside of the wafer 6 are measured.

By grasping a predetermined level difference (design position) of the pattern provided on the wafer 6 in advance, the positional deviation from the level difference in each shot area 20 is calculated.
Then, the correction amount for the height Z of the exposure position and the rotation Tilt can be fed back from the calculated positional deviation.

Here, the steps of the pattern provided on the wafer 6 also tend to be displaced concentrically over the entire wafer 6 from the center toward the outside due to processes such as resist coating, etching, heat treatment, film formation, and CMP. .
Therefore, in order to obtain an average stepped shape, the sample shot areas 40 should be arranged as in the first and second embodiments.

That is, in the exposure apparatus 70 according to the present embodiment, first, the steps of the pattern provided in all the shot areas 20 on the predetermined wafer 6 are measured in advance, and the measurement result and the overlay accuracy required in the exposure process are used. , the necessary correction order N is determined.
Next, based on the necessary correction order N, the concentric circle division number p and the area division number s between the concentric circles of the wafer 6 are set, and after the wafer 6 is divided into concentric circles, the areas between the concentric circles are divided into a plurality of division areas. 45, and one sample shot area 40 is arranged for each divided area 45 .

Then, alignment marks (not shown) provided in each sample shot area 40 are measured. Then, the coefficients a _i (i = 0, 1, ..., N) and b _j (j = 0, 1, ..., N) are obtained by fitting the measurement results using the following equation (5). .
Then, the step Δz(x, y) in the first direction perpendicular to the surface at each position of the wafer 6 is calculated.

Then, the exposure parameters in the exposure apparatus 10 are corrected (determined) according to the calculated level difference Δz(x, y).
In other words, this corresponds to converting the coordinate system when exposing the wafer 6 in the exposure apparatus 10 .

As a result, the exposure apparatus 70 according to the present embodiment can accurately detect the pattern step shape and extract the average pattern step.
In addition, exposure parameters can be corrected by arranging a small number of sample shot areas 40 according to pattern steps generated on the wafer 6 by processes of apparatuses other than the exposure apparatus 70 .

At this time, the sample shot area 40 is set to the shot area 20 closest to the geometric center (center of gravity) of the figure of each divided area 45 in order to see the average pattern steps occurring in each divided area 45. do.

Although preferred embodiments have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist.

The scope of the present embodiment also includes an exposure method for carrying out the above-described embodiments, a program characterized by being executed by a computer, and a computer-readable recording medium on which the program is recorded.

[Product manufacturing method]
Next, an article manufacturing method using the exposure apparatus according to any one of the first to third embodiments will be described.
Articles are semiconductor devices, display devices, color filters, optical components, MEMS, and the like.

For example, a semiconductor device is manufactured through a pre-process for forming a circuit pattern on a wafer and a post-process including a processing process for completing the circuit chip formed in the pre-process as a product.
The pre-process includes an exposure process of exposing a wafer coated with a photosensitive agent using the exposure apparatus according to any one of the first to third embodiments, and a development process of developing the photosensitive agent.
An etching process, an ion implantation process, and the like are performed using the developed pattern of the photosensitive agent as a mask to form a circuit pattern on the wafer.
By repeating these steps of exposure, development, etching, etc., a circuit pattern consisting of a plurality of layers is formed on the wafer.
In a post-process, the wafer on which the circuit pattern is formed is diced, and chip mounting, bonding, and inspection processes are performed.

A display device is manufactured through a process of forming a transparent electrode. The step of forming the transparent electrode includes the step of applying a photosensitive agent to the glass wafer on which the transparent conductive film is deposited, and the step of applying the photosensitive agent using the exposure apparatus according to any one of the first to third embodiments. It includes the steps of exposing the glass wafer and developing the exposed photosensitive agent.

According to the method for manufacturing an article according to this embodiment, it is possible to manufacture a higher-quality article than in the past.

3 Reticle (original)
5 Alignment scope (measurement unit)
6 Wafer (substrate)
10 exposure device 15 control unit 21 alignment mark (predetermined location)
40 sample shot area 45 divided area N correction order

Claims (15)

An exposure apparatus for exposing a substrate,
a control unit, the control unit comprising:
dividing the surface of the substrate into a plurality of divided regions, wherein the plurality of divided regions are arranged along concentric circles, each divided region has a truncated fan shape or a fan shape and has an equal area ;
arranging the same number of sample shot areas in each divided area;
An exposure apparatus, wherein an exposure parameter of the exposure apparatus is determined based on a measurement result obtained by measuring a predetermined location in each of the sample shot areas by a measurement unit. Based on the measurement results obtained by causing the measurement unit to measure the position of the alignment mark in the first cross section parallel to the surface of the substrate in each of the sample shot areas, the control unit determines the position of the alignment mark in the first cross section. 2. An exposure apparatus as claimed in claim 1, characterized in that the exposure parameters are determined in terms of direction. 3. The exposure apparatus according to claim 2, wherein said controller sets a shot area including said alignment mark closest to a geometric center in said divided area as said sample shot area. The control unit determines a correction order from a measurement result obtained by causing the measurement unit to measure the alignment mark provided on the predetermined substrate and a required overlay accuracy, and determines the correction order of the substrate according to the correction order. 4. The exposure apparatus according to claim 2, wherein the inside of the plane is divided into the plurality of divided regions. The control unit defines the position of the alignment mark in the first cross section as (x, y), the correction order as N, and the positional deviation of the alignment mark from the design position in the first cross section as Δxy( x, y),

By fitting the measured positions of the alignment marks in each of the sample shot areas using the following equation, the coefficients a _i (i=0, 1, . . . , N) and b _j (j=0, 1, . , N), and
5. An exposure apparatus according to claim 4, wherein said obtained coefficients are used to determine said exposure parameters. The control unit causes the measurement unit to measure the positions of the patterns provided on the substrate in a first direction perpendicular to the surface of the substrate in each of the sample shot areas, based on the measurement results. 2. An exposure apparatus according to claim 1, characterized in that it determines said exposure parameters with respect to said first direction. 7. The exposure apparatus according to claim 6, wherein said controller sets a shot area closest to a geometric center in said divided area as said sample shot area. The control unit determines a correction order from a measurement result obtained by causing the measurement unit to measure the position of the pattern provided on the predetermined substrate in the first direction and a required overlay accuracy, and performs the correction. 8. An exposure apparatus according to claim 6, wherein the surface of said substrate is divided into said plurality of divided areas according to the order. The control unit defines the position of the pattern in the plane of the substrate as (x, y), the correction order as N, and the positional deviation of the pattern in each of the sample shot areas from the design position in the first direction. is Δz(x, y),

Coefficients a _i (i=0, 1, . . . , N) and b _j (j=0, 1, . N),
9. An exposure apparatus according to claim 8, wherein said obtained coefficients are used to determine said exposure parameters. 10. The exposure apparatus according to any one of claims 1 to 9, wherein said concentric circles are composed of a plurality of concentric circles at equal intervals. A stage on which the substrate is placed,
11. The exposure apparatus according to any one of claims 1 to 10 , wherein the control unit determines the driving position of the stage based on the measurement result. An illumination optical system that guides exposure light emitted from a light source to the original, and a projection optical system that guides the exposure light that has passed through the original to the substrate,
12. The exposure apparatus according to claim 1, wherein the controller determines optical performance of at least one of the illumination optical system and the projection optical system based on the measurement result. exposing the substrate;
developing the exposed substrate;
a step of processing the developed substrate to obtain an article;
has
The exposing step includes
A step of dividing the surface of the substrate into a plurality of divided regions, wherein the plurality of divided regions are arranged along concentric circles, and each divided region has a truncated fan shape or a fan shape and has an equal area . process and
arranging the same number of sample shot areas in each divided area;
determining exposure parameters based on measurement results obtained by measuring predetermined locations in each of the sample shot areas;
A method for manufacturing an article, comprising: An exposure method for exposing a substrate,
A step of dividing the surface of the substrate into a plurality of divided regions, wherein the plurality of divided regions are arranged along concentric circles, and each divided region has a truncated fan shape or a fan shape and has an equal area . process and
arranging the same number of sample shot areas in each divided area;
determining exposure parameters based on measurement results obtained by measuring predetermined locations in each of the sample shot areas;
A method of exposure, comprising: A step of dividing the surface of the substrate into a plurality of divided regions, wherein the plurality of divided regions are arranged along concentric circles, and each divided region has a truncated fan shape or a fan shape and has an equal area. and,
arranging the same number of sample shot areas in each divided area;
determining exposure parameters of an exposure apparatus based on measurement results obtained by measuring predetermined locations in each of the sample shot areas;
A computer-readable recording medium recorded with a program that causes a computer to execute

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