CN102681356B - Local exposure method and local exposure device - Google Patents
Local exposure method and local exposure device Download PDFInfo
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- CN102681356B CN102681356B CN201210069291.0A CN201210069291A CN102681356B CN 102681356 B CN102681356 B CN 102681356B CN 201210069291 A CN201210069291 A CN 201210069291A CN 102681356 B CN102681356 B CN 102681356B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2049—Exposure; Apparatus therefor using a cantilever
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides a local exposure method and a local exposure device, capable of easily adjusting exposure of each area which is accurately set in a substrate surface, raising uniformity of a resist residual film which has been developed, and suppressing deviation of wire width and spacing of a wiring pattern. The local exposure method comprises the steps of: for a specified area of a photosensitive film formed on a processed substrate (G), calculating an object illumination for radiating according to the film thickness; determining at least one light emitting body capable of radiating to the specified area; for the determined light emitting body (GR), if other light emitting bodies adjacent to the light emitting body can radiate to the specified area, subtracting illumination of interference lights caused by light emitting of the other light emitting bodies from the object illumination, and setting the calculated value as a corrected setting illumination; determining a driving current value according to the corrected setting illumination, and enabling one light emitting body to emit light according to the driving current value.
Description
Technical field
The present invention relates to the local exposure method that a kind of processed substrate to defining light-sensitive surface carries out partial exposure process.
Background technology
Such as in the manufacture process of FPD (flat-panel monitor), form circuit pattern by photo-mask process.
In this photo-mask process, as also recorded in patent documentation 1, after the film of regulation is formed to processed substrates such as glass substrates, coating photoresist (hereinafter referred to as resist), the preparation of evaporating by making the solvent in resist drying processes (drying under reduced pressure and pre-bake treatment) and forms resist film (light-sensitive surface).Further, make above-mentioned resist film expose accordingly with circuit pattern, development treatment is carried out to this resist film and forms pattern.
In addition, for this photo-mask process, as shown in (a) of Figure 19, Resist patterns R is made to have different thickness (thick film portion R1 and film section R2), utilize this Resist patterns to carry out repeatedly etch processes, photomask number and process number can be reduced thus.In addition, can obtain this Resist patterns R by using half (halftoning) exposure-processed of half-tone mask, wherein, this half-tone mask has the different part of the transmitance of light in a mask.
(a) ~ (e) of use Figure 19 illustrates the circuit pattern formation process when the Resist patterns R of application during this partly exposes.
Such as, in (a) of Figure 19, by gate electrode 200, insulating barrier 201, the Si layer 202 be made up of a-Si layer (undoped amorphous Si layer) 202a and n+a-Si layer 202b (phosphorus doping amorphous Si layer) and stack gradually for the formation of the metal level 203 of electrode on glass substrate G.
In addition, on metal level 203, after similarly forming resist film, by drying under reduced pressure and pre-bake treatment, the solvent in resist is evaporated, afterwards, form Resist patterns R by above-mentioned half exposure-processed and development treatment.
After formation this Resist patterns R (thick film portion R1 and film section R2), as shown in (b) of Figure 19 using this Resist patterns R as mask, metal level 203 is etched (etching for the first time).
Then, by plasma, Resist patterns R whole implementation ashing (ashing) is processed.Thus, as shown in (c) of Figure 19, obtain the Resist patterns R3 about thickness minimizing half.
Then, as shown in (d) of Figure 19, this Resist patterns R3 is utilized as mask, the metal level 203 that will expose, Si layer 202 are etched (second time etching), finally, as shown in (e) of Figure 19, obtain circuit pattern by removing resist R3.
But, there is following problem: for above-mentioned half exposure-processed defining the Resist patterns R of thick film portion R1 and film section R2 like that of use, when forming Resist patterns R, when its thickness is uneven in real estate, between the live width of the pattern formed, pattern, produce deviation.
That is, use (a) ~ (e) of Figure 20 to specifically describe, (a) of Figure 20 is the situation of the thickness t1 that (a) that the thickness t2 of the film section R2 represented in Resist patterns R is formed as being greater than Figure 19 illustrates.
In this case, in the same manner as the operation shown in Figure 19, etching ((b) of Figure 20) is implemented, to Resist patterns R whole implementation ashing process ((c) of Figure 20) to metal film 203.
At this, as shown in (c) of Figure 20, obtain thickness be reduced to half about Resist patterns R3, but the thickness of removed resist film is identical with the situation of (c) of Figure 19, the spacing p1 that the spacing p2 therefore between illustrated a pair Resist patterns R3 illustrates than (c) of Figure 19 is narrow.
Thus, according to this state, through implementing the removal ((e) of Figure 20) of etching ((d) of Figure 20) and Resist patterns R3 and spacing p1 narrow (live width of circuit pattern expands) that the spacing p2 of circuit pattern that obtains illustrates than (e) of Figure 19 to metal film 203 and Si layer 202.
For the problems referred to above, adopted following methods: according to each mask pattern making light transmission when exposure-processed, determine that the thickness in Resist patterns R is formed as being greater than the predetermined portion of desired value by film thickness measuring, improve the exposure sensitivity at this position in the past.
Namely, before exposure-processed, resist film to be heated and in the pre-bake treatment that solvent is evaporated, make the heating measurer in real estate variant, the exposure sensitivity in afore mentioned rules position is changed, the residual thickness after development treatment is adjusted (in face homogenizing).
Specifically, the heater be used in pre-bake treatment is divided into multiple region, the heater after segmentation is carried out drived control independently, carries out temperature adjustment according to each region thus.
Further, the height close to pin (changing the distance between heater and substrate) by changing supporting substrates carries out the adjustment of heating-up temperature.
Patent documentation 1: Japanese Unexamined Patent Publication 2007-158253 publication
Summary of the invention
the problem that invention will solve
But, as mentioned above, when the heat treated by being undertaken by prebake carries out the adjustment of residual thickness, the heater area after segmentation needs the size guaranteed to a certain degree due to the restriction of hardware, therefore there is the heating cannot carrying out discreet region and adjusts this problem.
In addition, for by changing the heating adjustment carried out close to the height of pin, needing the number of working processes changing pin height, therefore there is production efficiency and reduce this problem.
The present invention completes in view of the problem points of above-mentioned conventional art, there is provided a kind of following local exposure method and local exposure device: easily can adjust the exposure in each region of setting subtly in real estate, improve the uniformity of the residual film of resist after development treatment, the live width of wiring pattern and the deviation of spacing can be suppressed.
for the scheme of dealing with problems
In order to solve the problem, a kind of local exposure method involved in the present invention, above the substrate transport path of substrate being carried out horizontal direction conveying with level, the luminous element be made up of one or more light-emitting component in the multiple light-emitting components linearly arranged on the direction intersected with substrate throughput direction is optionally carried out luminescence as light emitting control unit drive, exposure-processed is implemented along substrate throughput direction relative to the light-sensitive surface on the aforesaid substrate of above-mentioned luminous element movement in the below of above-mentioned luminous element by above-mentioned luminous element, the feature of this local exposure method is, possess following steps: object illumination calculation procedure: for the regulation region of the light-sensitive surface formed on aforesaid substrate, the object illumination that will irradiate is obtained according to its thickness, luminous element determining step: determine at least one luminous element that can be irradiated to afore mentioned rules region, setting luminance calculation step: for a determined luminous element, when other luminous element adjacent with this luminous element can be irradiated in afore mentioned rules region, from above-mentioned object illumination, deduct the illumination of the interference light caused by the luminescence of other luminous element above-mentioned, and calculated value is set to the setting illumination after correction, and driving current value determining step: decide driving current value according to the above-mentioned setting illumination after correcting, make an above-mentioned light according to this driving current value.
According to this structure, the driving current value of selected luminous element is set as the value of the interference illumination considered from other adjacent luminous element.
Therefore, it is possible to irradiate accurately the arbitrary position that thickness will be made thinner with the exposure preset (object illumination), the thickness of expectation can be set to after development treatment.
Thus, even if when such as making resist film have different thickness (thick film portion and film section) in half exposure-processed (thickness that namely film section is thin like that), make the resist uniform film thickness after development treatment, the live width of wiring pattern and the deviation of spacing can be suppressed.
On the other hand, the present invention relates to a kind of local exposure device, consist of above the substrate transport path of substrate being carried out horizontal direction conveying with level, the luminous element be made up of one or more light-emitting component in the multiple light-emitting components linearly arranged on the direction intersected with substrate throughput direction is optionally carried out luminescence as light emitting control unit drive, exposure-processed is implemented along substrate throughput direction relative to the light-sensitive surface on the aforesaid substrate of above-mentioned luminous element movement in the below of above-mentioned luminous element by above-mentioned luminous element, the feature of this local exposure device is, possess: object illumination computing unit, it is for the regulation region of the light-sensitive surface formed on aforesaid substrate, the object illumination that will irradiate is obtained according to its thickness, luminous element determining unit, it determines at least one luminous element that can be irradiated to afore mentioned rules region, setting luminance calculation unit, it is for a determined luminous element, when other luminous element adjacent with this luminous element can be irradiated in afore mentioned rules region, from above-mentioned object illumination, deduct the illumination of the interference light caused by the luminescence of other luminous element above-mentioned, and calculated value is set to the setting illumination after correction, and driving current value determining unit, it decides driving current value according to the above-mentioned setting illumination after correction, makes an above-mentioned light according to this driving current value.
the effect of invention
According to the present invention, a kind of local exposure method can be obtained, easily can adjust the uniformity of the exposure in each region of setting subtly in real estate and the residual film of resist after improving development treatment, and the live width of wiring pattern and the deviation of spacing can be suppressed.
Accompanying drawing explanation
Fig. 1 is the stereogram of the overall Sketch representing an execution mode involved in the present invention.
Fig. 2 is the stereogram of the overall Sketch representing an execution mode involved in the present invention, is the figure representing the state having moved into processed substrate.
Fig. 3 is the sectional view of the A-A direction of arrow of Fig. 2.
Fig. 4 is the figure of the configuration of the local exposure device schematically shown in photo-mask process.
Fig. 5 is the vertical view of the arrangement that the light-emitting component forming light source is shown.
Fig. 6 is the flow chart of the operation of the setup parameter representing the light emitting control program that the local exposure device obtaining Fig. 1 has.
Fig. 7 is the figure of the light emitting control for illustration of the light-emitting component in the local exposure device of Fig. 1, is the vertical view of the processed substrate representing the local exposure device on processed substrate with coordinate.
Fig. 8 is the table of the example of the setup parameter representing the light emitting control program performed in the local exposure device of Fig. 1.
Fig. 9 represents in the local exposure device of Fig. 1 by the chart of curve of illumination of light emitting control group forming light source.
Figure 10 is the flow chart of the flow process of the operation representing the lightemission drive current values calculated in light emitting control group.
Figure 11 is the flow chart of the flow process of the operation representing the peak value irradiation position determined in each light emitting control group.
Figure 12 is the end view of the operation for illustration of the peak value irradiation position determined in each light emitting control group.
Figure 13 represents the lightemission drive current values of the relation between lightemission drive current values in each light emitting control group and illumination obtained and adjacent light emitting control group and interferes the flow chart of flow process of operation of the relation between illumination.
Figure 14 be for illustration of the relation between the lightemission drive current values obtained in each light emitting control group and illumination and adjacent light emitting control group lightemission drive current values and interfere the end view of operation of the relation between illumination.
Figure 15 is the flow chart of the action represented in the local exposure device of Fig. 1.
Figure 16 is the vertical view of the action for illustration of the partial exposure in the local exposure device of Fig. 1.
Figure 17 is the chart of the action for illustration of the partial exposure in the local exposure device of Fig. 1.
Figure 18 is the vertical view of the application examples for illustration of local exposure method involved in the present invention.
(a) ~ (e) of Figure 19 is the sectional view of the formation process for illustration of the wiring pattern be used in half exposure-processed.
(a) ~ (e) of Figure 20 is the figure of the formation process representing the wiring pattern be used in half exposure-processed, is the sectional view schematically showing the thick situation of the situation of resist thickness Figure 19.
Figure 21 is the flow chart of the flow process of the operation representing other execution mode involved in the present invention.
description of reference numerals
1: local exposure device; 2: substrate transport path; 3: light irradiation unit; 4: light source; 9: luminous drive division; 20: conveying roller; 39: substrate detecting sensor; 40: control part; G: glass substrate (processed substrate); L:UV-LED element (light-emitting component); GR: light emitting control group (luminous element); T1: processing procedure table.
Embodiment
Below, with reference to accompanying drawing, an execution mode involved by local exposure device of the present invention is described.Fig. 1 is the stereogram of the overall Sketch representing the local exposure device 1 implementing local exposure method involved in the present invention.In addition, Fig. 2 is the stereogram of the local exposure device 1 from the angle views different from Fig. 1, is the figure of the state representing the glass substrate G moved into as processed substrate.In addition, Fig. 3 is the sectional view of the A-A direction of arrow of Fig. 2.In addition, Fig. 4 is the figure of the configuration of the local exposure device 1 schematically shown in photo-mask process.
Local exposure device 1 shown in Fig. 1 to Fig. 3 is configured in in lower unit, shown in (a) ~ (c) of this unit such as Fig. 4 like that by processed substrate with the state of level in the X direction horizontal feed (being later recited as advection conveying) while carry out serial photo-mask process.
Namely, in photo-mask process, be configured with resist applying device 51 (CT) and decompression dry device 52 (DP), resist liquid as light-sensitive surface is coated to processed substrate by this resist applying device 51 (CT), and this decompression dry device 52 (DP) makes the resist film (light-sensitive surface) on substrate dry in post-decompression chamber.Further, by being configured with successively: prebake device 53 (PRB), it carries out the heat treated for resist film being bonded to substrate G; Cooling device 54 (COL), this substrate G is cooled to set point of temperature by it; Exposure device 55 (EXP), it exposes to resist film the circuit pattern forming regulation; And developing apparatus 56 (DEV), it carries out development treatment to the resist film after exposure.
At this, local exposure device 1 (AE) involved in the present invention is such as configured in any position shown in (a) ~ (c) of Fig. 4.That is, to be configured in after prebake device 53 (PRB) and assigned position before developing apparatus 56 (DEV).
For the local exposure device 1 (AE) of configuration like this, such as, when using eurymeric resist, when processing multiple substrate G continuously, in the regulation region of all substrate G wiring pattern width be greater than other region and between pattern, other region of gap ratio is narrow, (for reducing thickness) partial exposure is implemented to afore mentioned rules region.
In addition, in the following embodiments, the situation of eurymeric resist is illustrated, but for local exposure device involved in the present invention, the situation of negative resist can also be applied to, in this case, to partial exposure being implemented in thicker for resist residual film the regulation region remained.
Then, the structure of local exposure device 1 is described in detail.As shown in FIG. 1 to 3, local exposure device 1 possesses substrate transport path 2, and this substrate transport path 2 is by being rotatably layed in multiple rollers 20 on base 100 to X-direction conveying substrate G.Substrate transport path 2 has multiple columned roller 20 extended in the Y direction, and these multiple rollers 20 are also rotatably configured on base 100 respectively across the interval of regulation in the X direction.In addition, multiple roller 20 is configured to by belt (not shown) interlock, and a roller 20 is connected with roll driving apparatus (not shown) such as motor.In addition, in FIG, in order to the explanation making the structure of this local exposure device 1 is easier, roller 20 broken section of accompanying drawing nearby side is represented.
In addition, as shown in the figure, be configured with light irradiation unit 3 above substrate transport path 2, this light irradiation unit 3 is for carrying out partial exposure (UV illumination is penetrated) to substrate G.
This light irradiation unit 3 possesses the light source 4 in substrate width direction (Y-direction) the upper wire extended, and substrate G carries in the below of this light source 4.
The light source 4 of above-mentioned wire is formed as follows: the multiple UV-LED element L sending the UV light of provision wavelengths (wavelength near any one such as, in g line (436nm), h line (405nm), i line (364nm)) are arranged on circuit substrate 7.Such as, (a) of Fig. 5 is by circuit substrate 7 observable vertical view from below.As shown in (a) of Fig. 5, on circuit substrate 7, multiple UV-LED element L is arranged in three row.
At this, as shown in (a) of Fig. 5, multiple (in the accompanying drawings nine) UV-LED element L by as a light emitting control unit (being set to light emitting control group GR), multiple light emitting control group GR
1~ GR
n(n is positive integer) is aligned to row.So multiple LED element L is set to light emitting control unit, the deviation of the luminous illumination between light-emitting component can be suppressed thus.
In addition, when using less UV-LED element L to form light source 4, as shown in (b) of Fig. 5, be desirably in and substrate throughput direction (X-direction) and substrate width direction (Y-direction) are carried out interconnected in the mode of element L overlap.
In addition, as shown in Figure 3, the light illumination window 6 formed by light diffusing board is provided with in the below of light source 4.That is, between light source 4 and the substrate G as irradiated body, light illumination window 6 is configured with.
Like this, by arranging the light illumination window 6 formed by light diffusing board, the light launched from light source 4 suitably spreads through light illumination window 6, and the connection of therefore adjacent UV-LED element L is for linearly to irradiate downwards.
In addition, as shown in Figure 3, form following structure: in the front and back of UV-LED element L, be provided with at substrate width direction (Y-direction) the upper light reflecting wall 8 extended, the light sent by UV-LED element L is launched downwards from light illumination window 6 expeditiously.
In addition, about each light emitting control group GR forming light source 4, its light emitting control is controlled independently by luminous drive division 9 (Fig. 1) respectively.Further, the para-electric flow valuve that each light emitting control group GR (UV-LED element L) is provided can be controlled respectively.That is, correspondingly, the transmitting illumination of the UV-LED element L luminescence of each light emitting control group GR can change the electric current provided with luminous drive division 9.
In addition, the driving of control part 40 to above-mentioned luminous drive division 9 by being made up of computer controls.
In addition, relative to the substrate G of conveying in substrate transport path 2, the height of the light transmitting site of light irradiation unit 3 can change.Namely, as shown in Figure 3, about light irradiation unit 3, the horizontal plate part 15a being arranged at the two ends of the length direction (Y-direction) of its supporting frame 15 is supported from below by a pair lifting shaft 11, and lifting shaft 11 can move up and down by being arranged at the lifting drive division 12 (lowering or hoisting gear) be such as made up of cylinder of base 100.
In addition, as shown in Figure 2 and Figure 3, move to the position of bottom at light irradiation unit 3, the lower surface of the horizontal plate part 15a of above-mentioned supporting frame 15 abuts against with the support unit 16 being arranged at base 100.
In addition, in base 100, be equipped with the guide parts 13 of tubular respectively in the left and right sides of lifting drive division 12.On the other hand, at the lower surface of the horizontal plate part 15a of above-mentioned supporting frame 15, be respectively arranged with the axis of guide 14 engaged with above-mentioned guiding parts 13 in the left and right sides of above-mentioned lifting shaft 11.Thus, form following structure: along with the lifting of light irradiation unit 3, the axis of guide 14 slides along the vertical direction in guiding parts 13, maintains the levelness of the light illumination window 6 of light irradiation unit 3 accurately.
In addition, the below of light irradiation unit 3 is provided with illuminance transducer unit 30, this illuminance transducer unit 30 is launched and the illumination (transmitted beam) of light through light illumination window 6 from light source 4 for detecting.
This illuminance transducer unit 30 possesses signal test section and towards the illuminance transducer 31 of top, this illuminance transducer 31 is arranged on movable plate 32, and this movable plate 32 can be upper mobile in substrate width direction (Y-direction).In addition, the base 100 immediately below light source 4 is equipped with the pair of guide rails 33a, the 33b that extend on substrate width direction along light source 4.
Be provided with in the following side of above-mentioned movable plate 32 and along the linear motor 34 of above-mentioned pair of guide rails 33a, 33b movement, power supply can be provided by the power cable (not shown) be configured in the cable cover 35 of bending snake abdomen shape freely to this linear motor 34.In addition, in cable cover 35, be configured with the control cable (not shown) of the action for being controlled linear motor 40 by control part 40.
That is, the illuminance transducer 31 on movable plate 32 can move up in substrate width side along guide rail 33a, 33b, and the test section now in illuminance transducer 31 is consistent with the height of real estate all the time.In other words, illuminance transducer 31 can be retreated along being irradiated to the light irradiation position of substrate G from above-mentioned light source 4 in substrate width direction.
In addition, in local exposure device 1 during conveying substrate G, control illuminance transducer 31 by control part 40, make illuminance transducer 31 not interfere with substrate G and keep out of the way the end side of guide rail 33a, 33b.
Use the illuminance transducer 30 with this structure be in order to, the luminous illumination measuring each light emitting control group GR obtains being supplied to the relation between the current value of this light emitting control group GR (LED element L) and luminous illumination.
In addition, about this local exposure device 1, as shown in Figure 3, be provided with the substrate detecting sensor 39 of the assigned position (such as front end) of the substrate G for detecting conveying in substrate transport path 2 at the upstream side of light irradiation unit 3, its detection signal is outputted to control part 40.Substrate G is transferred in substrate transport path 2 with fixing speed (such as 50mm/sec), and therefore control part 40 can obtain the transfer position of substrate G according to above-mentioned detection signal and the time obtained after this detection signal and substrate conveying speed.
In addition, control part 40 has light emitting control program P in the posting field of regulation, and this light emitting control program P is used for forming the brightness of each light emitting control group GR of light source 4 in the moment control of regulation, being namely supplied to the current value of each light emitting control group GR (UV-LED element L).
Preset will to the assigned position of substrate G irradiate need illumination (being supplied to the driving current value of light emitting control group GR), for determining the information etc. of the light emitting control group GR assigned position of aforesaid substrate G being carried out to light emitting control, the parameter of fabrication procedures used when performing as this light emitting control program P.
At this, use Fig. 6 to Fig. 8 illustrates the preparatory process in local exposure device 1.In order to implement this preparatory process according to making when exposure-processed each mask pattern of light transmission determine parameter (being called processing procedure) involved by exposure-processed.Specifically, this preparatory process is implemented in order to each parameter of filling in the processing procedure table T1 shown in Fig. 8.In addition, this processing procedure table T1 is stored in control part 40.
In addition, in this preparatory process, use the arbitrary substrate in two kinds of sampling substrates (being called sample objects 1,2).First, sample objects 1 is the processed substrate implement half exposure and development treatment after coating resist after.On the other hand, sample objects 2 is the processed substrates being defined wiring pattern by common photo-mask process (operation without local exposure device 1).
As shown in Figure 6, when sample objects 1, (the step St1 of Fig. 6) is sampled to the multiple processed substrate implementing half exposure and development treatment after coating resist.
Then, measure the resist residual-film thickness (the step St2 of Fig. 6) of sampling in the face of the substrate G obtained, as schematically shown in Fig. 7, (x, y) determine the regulation region AR (the step St5 of Fig. 4) that will reduce film according to multiple two-dimensional coordinate value.
On the other hand, as shown in Figure 6, when sample objects 2, by common photo-mask process (operation without local exposure device 1), (the step St3 of Fig. 6) is sampled to the multiple processed substrate forming wiring pattern.
Then, measure the spacing (the step St4 of Fig. 6) between the live width of the wiring pattern of sampling in the face of the substrate G obtained, pattern, as schematically shown in Fig. 7, (x, y) determine the regulation region AR (the step St5 of Fig. 6) that will reduce film according to multiple two-dimensional coordinate value.
When determining regulation region AR, as shown in the processing procedure table T 1 of Fig. 8, it (is such as, 1000 when coordinate (x1, y1) that control part 40 calculates for each coordinate figure in the AR of regulation region the thickness needing to reduce
) (the step St6 of Fig. 6).Further, according to multiple conditions such as the value of this minimizing thickness and resist kinds, calculating the object illumination will irradiated for reducing thickness (is 0.2mJ/cm when coordinate (x1, y1)
2) (the step St7 of Fig. 6).
In addition, as shown in the processing procedure table T1 of Fig. 8, control part 40 determines the light emitting control group GR (the step St8 of Fig. 6) that can irradiate each coordinate figure of regulation region AR respectively.Further, the lightemission drive current values (the step St9 of Fig. 6) for making the irradiation area of each light emitting control group GR become object illumination is calculated.
Like this, the flow process along Fig. 6 obtains whole parameter to set the processing procedure table T1 of Fig. 8, thus completes preparatory process (the step St10 of Fig. 6).
Then, the calculation method of the lightemission drive current values in the step St9 of above-mentioned Fig. 6 is described in detail.Calculating for this lightemission drive current values, calculates the current value of the illumination (be called and interfere illumination) considering the interference light caused by the luminescence of light emitting control group GR adjacent one another are.
Be described particularly, such as, make three adjacent light emitting control group GR
m-1, GR
m, GR
m+1when (m is positive integer, m < n) is respectively with illumination Q1 luminescence, as the diagram of Fig. 9, the illumination of each light emitting control group GR is rendered as respectively along parabola shaped illumination curve C1, C2, the C3 in substrate width direction.
The illumination of its peak value of these illumination curves C1, C2, C3 is Q1, but the part of end of swing and adjacent curves overlapped, be therefore overlapped into the curve C that peak illumination is the illumination Q2 being greater than Q1 as a whole.
That is, at each light emitting control group GR
m-1, GR
m, GR
m+1object illumination when being Q1, make each light emitting control group GR luminous with illumination Q1 even if control drive current, in fact also become and be greater than illumination Q1, therefore the light emission drive current of each light emitting control group GR needs to consider the interference illumination from adjacent light emitting control group GR.
Therefore, control part 40 uses the relational expression (1) of relation (linear (linearity)), the interference illumination Q from adjacent light emitting control group GR that represent between illumination Q and drive current I
i-1and the relational expression (2) between drive current I and the interference illumination Q from adjacent another light emitting control group GR
i+1and the relational expression (3) between drive current I, calculates light emission drive current for each light emitting control group GR.
In addition, in formula (1) ~ (3), a, a
i-1, a
i+1for inclination factor, b, b
i-1, b
i+1for intercept.In addition, in these relational expressions (1) ~ (3), preset each light emitting control group GR, be kept in the storage area of the regulation of control part 40.
[formula 1]
Q＝a·I+b …(1)
Q
i-1＝a
i-1·I+b
i-1…(2)
Q
i+1＝a
i+1·I+b
i+1…(3)
The light emission drive current using these relational expressions (1) ~ (3) to calculate is described.Figure 10 is three such as adjacent light emitting control group GR
m-1, GR
m, GR
m+1light emitting control group GR in (m is positive integer), central authorities
mthe flow chart of the calculation procedure of the light emission drive current of (luminous element).
First, to three light emitting control group GR
m-1, GR
m, GR
m+1target setting illumination Q respectively
m-1, Q
m, Q
m+1(the step Stp1 of Figure 10).
When target setting illumination, control part 40 from light emitting control group GR
man adjacent light emitting control group GR
m-1in relational expression (1) in calculate electric current I
m-1, its value is updated to respectively relational expression (2), (3) obtain respectively interfere illumination Q
m-1 (i-1), Q
m+1 (i+1)(the step Stp2 of Figure 10).
In addition, control part 40 from light emitting control group GR
madjacent another light emitting control group GR
m+1in relational expression (1) in calculate electric current I
m+1, its value is updated to respectively relational expression (2), (3) obtain respectively interfere illumination Q
m+1 (i-1), Q
m+1 (i+1)(the step Stp3 of Figure 10).
In addition, control part 40 uses for light emitting control group GR
minterference illumination Q
m-1 (i+1), Q
m+1 (i-1), by calculating the setting illumination Qr after correction with following formula (4)
m(the step Stp4 of Figure 10).
[formula 2]
Qr
m＝Q
m-Q
m-1(i+1)-Q
m+1(i-1)…(4)
In addition, the illumination (Qr that stipulated number (such as five times) makes to comprise interference illumination is carried out in the process of above-mentioned steps Stp2 ~ Stp4 by control part 40 repeatedly
m+ Q
m-1 (i+1)+ Q
m+1 (i-1)) be similar to object illumination Q gradually
m(the step Stp5 of Figure 10).That is, repeatedly following operation is carried out: again obtain the setting illumination Qr after based on the correction obtained in step Stp4
m(step Stp2,3), by from object illumination Q
mdeduct this interference illumination to upgrade the setting illumination Qr after correction
m.Correct value (the setting illumination Qr interfering illumination thus gradually
mvalue), converge to setting.
Setting illumination Qr after obtaining correction like this
mtime, its value is updated to above-mentioned relation formula (1) by control part 40, calculates light emitting control group GR thus
min driving current value (being set to the current value of the processing procedure table T1 of Fig. 8) (the step Stp6 of Figure 10).
In addition, control part 40 is to each process (the step Stp7 of Figure 10) needing each light emitting control group GR carrying out light emitting control to carry out above-mentioned steps Stp1 ~ Stp6.
In addition, in above-mentioned relation formula (1) ~ (3), prespecified each light emitting control group GR, is kept in the storage area of the regulation of control part 40, but, specifically, set like that below.
When setting relational expression (1) ~ (3), needing to carry out illumination photometry to each light emitting control group GR, therefore, first, each light emitting control group GR being determined that it sends out illumination the highest (becoming peak value) position light-struck.
That is, as shown in Figure 9, the illumination curve caused by the luminescence of each light emitting control group GR is formed parabola shaped, even if therefore in the irradiation area of same group of GR, illumination is also different.Therefore, control part 40 detects the position (illumination forms the position of peak value on substrate width direction) that illumination in irradiation area becomes peak value, determines the position of carrying out illumination photometry.
Be described along Figure 11 (flow chart), first under the state being set to specified altitude at light source 4 (light illumination window 6), linear motor 34 is driven according to the control signal from control part 40, as shown in (a) of Figure 12, the illuminance transducer 31 being in position of readiness moves to (the step Sp1 of Figure 11) below light illumination window 6.In addition, (a) of Figure 12 illustrates that illuminance transducer 31 is positioned at the light emitting control group GR of the most end (n=1) being in light source 4
1immediately below state.At this, the distance between light illumination window 6 with illuminance transducer 31 is identical with the distance between light illumination window 6 and substrate G upper surface, and the illumination therefore detected by illuminance transducer 31 becomes the illumination being irradiated to substrate G.
Then, only light emitting control group GR
1with the drive current luminescence (the step Sp2 of Figure 11) of regulation, illuminance transducer 31 carries out luminance detection at light emitting control group GR
1irradiation area in carry out scanning (moving to substrate width direction) (step Sp3 of Figure 11).
Then, detect that the position of the highest illumination is confirmed as light emitting control group GR by the operation of this step Sp3
1peak illumination position, store the position of illuminance transducer 31 on shifting axle (the step Sp4 of Figure 11) by control part 40.
Then, as shown in (b) of Figure 12, illuminance transducer 31 moves to light emitting control group GR
2immediately below, carry out the operation of above-mentioned steps Sp2 ~ Sp4 to determine light emitting control group GR
2peak illumination position.
Thus, whole light emitting control group GR is determined successively
1~ GR
npeak illumination position (the step Sp5 of Figure 11).
As mentioned above, when determining the peak illumination position of light emitting control group GR, the illumination (being called linear measurement) for obtaining the relation between illumination Q and drive current I is measured to each light emitting control group GR.The flow chart of (b) along (a) of Figure 13, Figure 13 illustrates this linear measurement.
To light emitting control group GR
mwhen carrying out linear measurement, first, as shown in (a) of Figure 14, illuminance transducer 31 is configured at light emitting control group GR
mpeak illumination position (the step Se1 of (a) of Figure 13).
Then, illumination photometry (the step Se2 of (a) of Figure 13) is carried out by illuminance transducer 31.As shown in the flow chart of (b) of Figure 13, in the illumination photometry undertaken by this illuminance transducer 31, light emitting control group GR
mlight emission drive current with regulation ascensional range (such as, 0.5A, the step Sep4 of (b) of Figure 13) step by step from minimum current (0A, the step Sep1 of (b) of Figure 13) rise to maximum rated current (the step Sep3 of (b) of I=5, Figure 13).
In addition, illuminance transducer 31 measures illumination Q when irradiating with each electric current
m(the step Sep2 of (b) of Figure 13).
Then, control part 40 is according to representing that the data rows of the relation between light emission drive current and illumination collected calculates the inclination factor a in above-mentioned relation formula (1)
mand intercept b
m(the step Sep5 of (b) of Figure 13).
Then, as shown in (b) of Figure 14, illuminance transducer 31 moves to light emitting control group GR
m+1peak illumination position (the step Se3 of (a) of Figure 13).
Then, at light emitting control group GR
min, light emission drive current with the ascensional range of regulation (such as, 0.5A, the step Sep4 of (b) of Figure 13) step by step from minimum current (0A, the step Sep1 of (b) of Figure 13) rise to maximum rated current (the step Sep3 of (b) of I=5, Figure 13).
In addition, illuminance transducer 31 is at light emitting control group GR
m+1peak illumination position measure interference illumination Q when irradiating with each electric current
i+1(the step Sep2 of (b) of Figure 13).
Then, control part 40 is according to representing that the data rows of the relation between light emission drive current and illumination collected calculates the inclination number a in above-mentioned relation formula (3)
i+1and intercept b
i+1(the step Sep5 of (b) of Figure 13).
Then, as shown in (c) of Figure 14, illuminance transducer 31 moves to light emitting control group GR
m-1peak illumination position (the step Se5 of (a) of Figure 13).
Then, at light emitting control group GR
min, light emission drive current with the ascensional range of regulation (such as, 0.5A, the step Sep4 of (b) of Figure 13) step by step from minimum current (0A, the step Sep1 of (b) of Figure 13) rise to maximum rated current (the step Sep3 of (b) of I=5, Figure 13).
In addition, illuminance transducer 31 is at light emitting control group GR
m-1peak illumination position measure interference illumination Q when irradiating with each electric current
i-1(the step Sep2 of (b) of Figure 13).
Then, control part 40 is according to representing that the data rows of the relation between light emission drive current and illumination collected calculates the inclination number a in above-mentioned relation formula (2)
i-1and intercept b
i-1(the step Sep5 of (b) of Figure 13).
Like this, by carrying out the process of the step Se1 ~ step Se6 of (a) of Figure 13, regulation and a light emitting control group GR
mrelevant above-mentioned formula (1) ~ (3), to whole light emitting control group GR
1~ GR
nperform the process of above-mentioned steps Se1 ~ step Se6, complete the linear measurement (the step Sep7 of (b) of Figure 13) that light source 4 is carried out thus.
In addition, the step Se1 of (a) of Figure 13,2, step Se3,4 and step Se5,6 order be not limited to said sequence, also measuring sequence can be replaced (such as, first step Se5,6 is carried out, then carry out step Se1,2, finally carry out step Se3,4 etc.).
Then, Figure 15 to Figure 17 is used to further illustrate the action of the partial exposure undertaken by local exposure device 1.
After process in above-mentioned operation terminates, substrate G carries in substrate transport path 2, and when being detected by substrate detecting sensor 39, its substrate detection signal is provided to control part 40 (the step S1 of Figure 15).
Control part 40 starts according to aforesaid substrate detection signal and substrate conveying speed the transfer position (the step S2 of Figure 15) obtaining (detection) substrate G.
Then, as schematically shown in Figure 16, in the moment (the step S3 of Figure 15) of regulation region through the below of light irradiation unit 3 will carrying out partial exposure, control part 40 is to the light emitting control group GR forming light source 4
1~ GR
ncarry out light emitting control (the step S4 of Figure 15).
At this, such as, in situation of carrying out sending out light-struck to the regulation region AR of substrate G, to the light emitting control group GR be configured at above it
n-1, GR
n-2carry out light emitting control.More particularly, if the chart of Figure 17 is (for according to each light emitting control group GR
n-1, GR
n-2the size of transmitted beam (watt) of time process) shown in, during the regulation region AR of substrate G is below light source, control the size of transmitted beam W is changed to provided drive current.
Like this, be not only and the regulation region AR of substrate G is simply irradiated, or the irradiation of any illumination is carried out to the local in the AR of region.
In addition, (the step S5 of Figure 15) other will carry out the region of partial exposure is there is in substrate G, in this region light emitting control is carried out to light emitting control group GR, in substrate G, there is not (the step S5 of Figure 15) other will carry out the region of partial exposure, terminate the partial exposure process to this substrate G.
In addition, as shown in Figure 4, except this partial exposure process (AE), with the exposure-processed (EXP) of carrying out in its prime or rear class cooperatively, complete the exposure-processed to substrate G, by developing apparatus 56 (DEV), development treatment is carried out to this resist film after exposure.
As mentioned above, according to execution mode involved in the present invention, carrying out in the process of partial exposure to any part of the resist thickness being formed at substrate G, form multiple light emitting control group GR by the multiple UV-LED element L linearly configured in substrate width direction (Y-direction), carry out light emitting control for the substrate G thereunder carried to select light emitting control group GR.
At this, the light emission drive current of selected light emitting control group GR is set as the value of the interference illumination considered from adjacent light emitting control group GR.
Therefore, it is possible to irradiate accurately the arbitrary position that thickness will be made thinner with the exposure preset (object illumination), the thickness of expectation can be set to after development treatment.
Thus, even if when such as making in half exposure-processed that there is different thickness (thick film portion and film section) (namely, even the thickness that film section is thin like that), also can make the resist uniform film thickness after development treatment, thus the live width of wiring pattern and the deviation of spacing can be suppressed.
In addition, in the above-described embodiment, the example be set in the region of carrying out localized superaddition exposure in the effective coverage of real estate is shown, but is not limited thereto.
Such as, as shown in figure 18, the process that edge part region (periphery of the effective coverage) E1 to substrate G exposes can also be used in.
In addition, in the above-described embodiment, the example light emitting control group be made up of multiple UV-LED element L being set to light emitting control unit is shown, but is not limited thereto, also using each UV-LED element L as light emitting control unit, meticulousr partial exposure can be carried out.
In addition, in the above-described embodiment, so that substrate G one side advection is carried while the situation of carrying out exposure-processed is illustrated, but, the present invention is not limited to which, also following structure can be set to: keep processed substrate in static state bottom chamber, exposure-processed is carried out to kept substrate.
In this case, linear light source also can be made to carry out moving (that is, the structure of linear light source and the relative movement in the opposite direction of processed substrate) relative to processed substrate.
In addition, in the above-described embodiment, remain the uniform situation of thickness for the resist after making half exposure-processed and be illustrated, but local exposure method involved in the present invention is not limited to half exposure-processed, can also be applied to common exposure-processed.Such as, even if when carrying out common exposure-processed instead of half exposure-processed, by the local exposure method involved by application invention, resist can be made to remain thickness and to be set in face even.
In addition, be not limited to the situation that the step St6 of Fig. 6, St7 residual thickness like that as required obtains the illumination of needs, also can measure the pattern line-width after development treatment and obtain the related data between pattern line-width and illumination, make processing procedure table according to this related data.
Then, other execution mode is described.The part identical with above-mentioned execution mode omits the description.Be described according to Figure 21, Figure 21 is the variation of Figure 10.To m light emitting control group GR
1, GR
2... GR
mtarget setting illumination Q respectively
1, Q
2... Q
m(the step Stp1 of Figure 21).Then, ignore adjacent light emitting control group light interference condition under, obtain light emitting control group GR respectively
1, GR
2... GR
mlight emission drive current (the step Stp2 of Figure 21).
To whole light emitting control group GR
1, GR
2... GR
mcarry out above process (the step Stp3 of Figure 21).Then, calculate by light emitting control group GR
1the light emitting control group GR produced
1immediately below illumination Q
1 (1)(the step Stp4 of Figure 21).Then, calculate by light emitting control group GR
2produce to light emitting control group GR
1interference illumination Q
1 (2)(the step Stp5 of Figure 21).Thus, light emitting control group GR
1immediately below illumination be Q
1 (1)+ Q
1 (2).
Then, calculate by light emitting control group GR
1produce to light emitting control group GR
2interference illumination Q
2 (1)(the step Stp6 of Figure 21).Then, calculate by light emitting control group GR
2the light emitting control group GR produced
2immediately below illumination Q
2 (2)(the step Stp7 of Figure 21).Then, calculate by light emitting control group GR
3produce to light emitting control group GR
2interference illumination Q
2 (3)(the step Stp8 of Figure 21).Thus, light emitting control group GR
2immediately below illumination be Q
2 (1)+ Q
2 (2)+ Q
2 (3).
Equally, calculate by light emitting control group GR
m-2produce to light emitting control group GR
m-1interference illumination Q
m-1 (m-2)(the step Stp9 of Figure 21).Then, calculate by (m-1) individual light emitting control group GR
m-1the light emitting control group GR produced
m-1immediately below illumination Q
m-1 (m-1)(the step Stp10 of Figure 21).Then, calculate by light emitting control group GR
mproduce to light emitting control group GR
m-1interference illumination Q
m-1 (m)(the step Stp11 of Figure 21).Thus, light emitting control group GR
m-1immediately below illumination be Q
m-1 (m-2)+ Q
m-1 (m-1)+ Q
m-1 (m).
Then, calculate by (m-1) individual light emitting control group GR
m-1produce to light emitting control group GR
minterference illumination Q
m (m-1)(the step Stp12 of Figure 21).Then, calculate by m light emitting control group GR
mthe light emitting control group GR produced
mimmediately below illumination Q
m (m)(the step Stp13 of Figure 21).Thus, light emitting control group GR
mimmediately below illumination be Q
m (m-1)+ Q
m (m).
Then, light emitting control group GR
1, GR
2... GR
mcorrection after setting illumination Q
r1, Q
r2... Q
rm-1, Q
rmbe respectively
Q
r1＝Q
1(1)-Q
1(2)
Q
r2＝Q
2(2)-Q
2(1)-Q
2(3)
…
…
Q
rm-1＝Q
m-1(m-1)-Q
m-1(m-2)-Q
m-1(m)
Q
rm=Q
m (m)-Q
m (m-1)(the step Stp14 of Figure 21).
Then, according to the setting illumination Q after correction
r1, Q
r2... Q
rm-1, Q
rmcalculate light emitting control group GR respectively
1, GR
2... GR
mdriving current value (the step Stp15 of Figure 21).Further, put rules into practice step Stp4 ~ step Stp15 number of times repeatedly, or, at GR
mcorrection after setting illumination Q
rm, from GR
m-1be shining into GR
millumination and from GR
m+1be shining into GR
millumination be added the value obtained become setting illumination Q
m-aiabove and Q
m+aibelow, i.e., Q
m-1-ai≤Q
m-1+ Q
m-1 (m)+ Q
m-1 (m-2)≤ Q
m-1before+ai, step Stp4 ~ step Stp15 is performed repeatedly.Also light emitting control group GR can be calculated respectively according to this order
1, GR
2... GR
mdriving current value.
In addition, in the above-described embodiment, if illumination decides light emission drive current and carries out the control of illumination as required.Now, the height of luminous illumination unit 3 is fixing, but can suitably adjust its height and position and make change.
Such as, even if light emission drive current is fixing, also worry that its illumination reduces due to the deterioration year in year out of UV-LED element L.Therefore, even if be when also can not get to the load of UV-LED element L applying maximum current the illumination expected in the result of illumination photometry, light irradiation unit 3 is measured again close to substrate G, when consequently obtaining the illumination expected, its height and position is set to the height and position of light irradiation unit 3 again.
Claims (8)
1. a local exposure method, above the substrate transport path of substrate being carried out horizontal direction conveying with level, the luminous element be made up of one or more light-emitting component in the multiple light-emitting components linearly arranged on the direction intersected with substrate throughput direction is optionally carried out luminescence as light emitting control unit drive, exposure-processed is implemented along substrate throughput direction relative to the light-sensitive surface on the aforesaid substrate of above-mentioned luminous element movement in the below of above-mentioned luminous element by above-mentioned luminous element, the feature of this local exposure method is, possess following steps:
Object illumination calculation procedure: for the regulation region of the light-sensitive surface formed on aforesaid substrate, obtain the object illumination that will irradiate according to its thickness;
Luminous element determining step: determine multiple luminous elements that can be irradiated to afore mentioned rules region;
Setting luminance calculation step: for a luminous element in determined above-mentioned multiple luminous element, when other luminous element adjacent with this luminous element can be irradiated in afore mentioned rules region, from above-mentioned object illumination, deduct the illumination of the interference light caused by the luminescence of other luminous element above-mentioned, and calculated value is set to the setting illumination after correction; And
Driving current value determining step: decide driving current value according to the above-mentioned setting illumination after correcting, make an above-mentioned light according to this driving current value.
2. local exposure method according to claim 1, is characterized in that,
In above-mentioned driving current value determining step,
Above-mentioned setting illumination after correcting being updated in the relational expression measured in the irradiation area of this luminous element when only making an above-mentioned light between the illumination obtained and the driving current value being applied to this luminous element, calculating above-mentioned driving current value thus.
3. local exposure method according to claim 1 and 2, is characterized in that,
In above-mentioned setting luminance calculation step,
According to when only making other light above-mentioned in the irradiation area of an above-mentioned luminous element relational expression measured between the illumination obtained and the driving current value being applied to other luminous element above-mentioned calculate the illumination of the interference light produced by the luminescence of other luminous element adjacent with an above-mentioned luminous element.
4. local exposure method according to claim 1 and 2, is characterized in that,
Comprise the following steps in above-mentioned setting luminance calculation step:
First step, calculates the illumination of the interference light produced by the luminescence of other luminous element above-mentioned according to the above-mentioned setting illumination after correction;
Second step, deducts the illumination of the interference light calculated in above-mentioned first step from above-mentioned object illumination, this calculated value is updated to the setting illumination after new correction; And
Step repeatedly, carries out stipulated number repeatedly by above-mentioned first step and above-mentioned second step.
5. a local exposure device, consist of above the substrate transport path of substrate being carried out horizontal direction conveying with level, the luminous element be made up of one or more light-emitting component in the multiple light-emitting components linearly arranged on the direction intersected with substrate throughput direction is optionally carried out luminescence as light emitting control unit drive, exposure-processed is implemented along substrate throughput direction relative to the light-sensitive surface on the aforesaid substrate of above-mentioned luminous element movement in the below of above-mentioned luminous element by above-mentioned luminous element, the feature of this local exposure device is, possess:
Object illumination computing unit, it, for the regulation region of the light-sensitive surface formed on aforesaid substrate, obtains the object illumination that will irradiate according to its thickness;
Luminous element determining unit, it determines multiple luminous elements that can be irradiated to afore mentioned rules region;
Setting luminance calculation unit, it is for a luminous element in determined above-mentioned multiple luminous element, when other luminous element adjacent with this luminous element can be irradiated in afore mentioned rules region, from above-mentioned object illumination, deduct the illumination of the interference light caused by the luminescence of other luminous element above-mentioned, and calculated value is set to the setting illumination after correction; And
Driving current value determining unit, it decides driving current value according to the above-mentioned setting illumination after correction, makes an above-mentioned light according to this driving current value.
6. local exposure device according to claim 5, is characterized in that,
Above-mentioned setting illumination after correcting is updated in the relational expression measured in the irradiation area of this luminous element when only making an above-mentioned light between the illumination obtained and the driving current value being applied to this luminous element by above-mentioned driving current value determining unit, calculates above-mentioned driving current value thus.
7. the local exposure device according to claim 5 or 6, is characterized in that,
Above-mentioned setting luminance calculation unit according to when only making other light above-mentioned in the irradiation area of an above-mentioned luminous element relational expression measured between the illumination obtained and the driving current value being applied to other luminous element above-mentioned calculate the illumination of the interference light produced by the luminescence of other luminous element adjacent with an above-mentioned luminous element.
8. the local exposure device according to claim 5 or 6, is characterized in that,
Above-mentioned setting luminance calculation unit possesses:
First component, it calculates the illumination of the interference light produced by the luminescence of other luminous element above-mentioned according to the above-mentioned setting illumination after correction;
Second component, it deducts the illumination of the interference light calculated by above-mentioned first component from above-mentioned object illumination, this calculated value is updated to the setting illumination after new correction; And
Parts repeatedly, its number of times that action of above-mentioned first component and above-mentioned second component is put rules into practice repeatedly.
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| JP (1) | JP5451798B2 (en) |
| KR (1) | KR101711231B1 (en) |
| CN (1) | CN102681356B (en) |
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| KR102475973B1 (en) * | 2015-03-31 | 2022-12-08 | 도쿄엘렉트론가부시키가이샤 | Homogenization of exposure dose through rotation, translation, and variable processing conditions |
| JP6921150B2 (en) * | 2019-07-24 | 2021-08-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Additional exposure equipment and pattern formation method |
| CN114706281B (en) * | 2022-05-18 | 2023-09-19 | 圆周率半导体(南通)有限公司 | Method for improving exposure uniformity of PCB |
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| JP2006095911A (en) * | 2004-09-30 | 2006-04-13 | Konica Minolta Medical & Graphic Inc | Multi-beam exposure device and method |
| JP4495019B2 (en) * | 2005-03-28 | 2010-06-30 | 東レエンジニアリング株式会社 | Peripheral exposure equipment |
| JP2007017896A (en) * | 2005-07-11 | 2007-01-25 | Fujifilm Holdings Corp | Exposure apparatus and method for reducing contamination |
| JP2007059598A (en) * | 2005-08-24 | 2007-03-08 | Nikon Corp | Adjustment method of lighting intensity in charged particle beam exposure device |
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| JP2008250139A (en) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | Exposure method of exposure device, and exposure device |
| JP5258226B2 (en) * | 2007-08-10 | 2013-08-07 | 株式会社オーク製作所 | Drawing apparatus and drawing method |
| JP2009109550A (en) * | 2007-10-26 | 2009-05-21 | Adtec Engineeng Co Ltd | Direct writing exposure apparatus |
| CN201194067Y (en) * | 2008-02-27 | 2009-02-11 | 芯硕半导体（中国）有限公司 | Exposure control system for direct-writing photo-etching machine |
| JP5325907B2 (en) * | 2011-02-22 | 2013-10-23 | 東京エレクトロン株式会社 | Local exposure equipment |
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| TWI506380B (en) | 2015-11-01 |
| JP2012208483A (en) | 2012-10-25 |
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| SG184661A1 (en) | 2012-10-30 |
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