SG184661A1

SG184661A1 - Local site exposure method and local site exposure apparatus

Info

Publication number: SG184661A1
Application number: SG2012018107A
Authority: SG
Inventors: Moriyama Shigeru; Tanaka Shigeki; Onoue Koutarou
Original assignee: Tokyo Electron Ltd
Priority date: 2011-03-15
Filing date: 2012-03-09
Publication date: 2012-10-30
Also published as: KR101711231B1; JP2012208483A; TWI506380B; JP5451798B2; CN102681356B; TW201303517A; CN102681356A; KR20120105374A

Abstract

Local Site Exposure Method and Local Site Exposure ApparatusTo provide a local site exposure method capable of easily adjusting the amount of light exposure in every small area set within a substrate plane, enhancing the uniformity of a residual resist film subsequent to a development process and suppressing variations in line width of each of wiring patterns and pitch therebetween. The local site exposure method includes : calculating a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the substrate, based on a desired film thickness thereof; specifying at least one light emitter capable of irradiating light onto the predetermined area; deducting, when a further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and setting the deducted value as a corrected set illuminance; and deciding a drive current value based on the corrected set illuminance and causing the one light emitter to emit light by the drive current value.FIG. 1

Description

TE.

Local Site Exposure Method and Local Site Exposure Apparatus

CROSS REFERENCE TO RELATED APPLICATIONS

[0001]

This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2011-056725 filed on March 15, 2011, the entire contents of which are incorporated herein by reference.

FIELD OF THE INVENTION

[0002]

The present invention relates to a local site exposure method which locally performs an exposure process on a ’ substrate to be processed formed with a photosensitive film. . 15

BACKGROUND ART

[0003]

When FPDs (Flat Panel Displays) are manufactured, for example, it has been practiced to form circuit patterns in accordance with’ so-called photolithography processes.

As described in Patent Document 1, in the photolithography processes, a predetermined film is grown on a substrate to be processed such as a glass substrate, and thereafter a photoresist (hereinafter called resist) is applied thereto, whereby a resist film (photosensitive film) is formed by a preliminary drying process (drying under reduced pressure and pre-bake process) for evaporating a solvent in the resist.

Then, the resist film is exposed in correspondence with the circuit patterns and subjected to development, thereby forming patterns.

[0004]

Meanwhile, in such photolithography processes, as shown in Fig. 19(a), a resist pattern R is caused to have different film thicknesses (thick film portion R1 and thin film portion R2), and an etching process is performed plural times using such different film thicknesses. This makes it possible to reduce the

NOI IAW

Ce _*GO0002*

number of photomasks and the number of processes. It should : be noted that such a resist pattern R can be obtained by a half (halftone) exposure process using a sheet of halftone mask having portions different in light transmittance.

[0005]

Circuit pattern forming processes using the resist pattern

R to which this half exposure is applied, will concretely be explained using Figs. 19(a) to Fig. 19(e).

In Fig. 19(a), for example, a gate electrode 200, an insulating layer 201, an Si layer 202 composed of an a-Si layer (non-doped amorphous Si layer) 202a and an n+a-Si layer 202b (phosphor-doped amorphous Si layer), and a metal layer 203 for forming an electrode are sequentially laminated over a glass substrate G.

After the resist film has uniformly been formed, a solvent in the resist is evaporated by the drying under reduced pressure and pre-bake process. Thereafter, a resist pattern R is formed on the metal layer 203 by the above half exposure process and development.

[0006]

After the formation of the resist pattern R (thick film portion R1 and thin film portion R2), etching of the metal layer 203 (first etching) is done with the resist pattern R as a mask as shown in Fig. 19(b).

Next, an ashing process is performed on the entire resist pattern R in plasma. Thus, as shown in Fig. 19(c), resist patterns R3 whose film thicknesses have been reduced to about half are obtained.

As shown in Fig. 19(d), the resist pattern R3 is utilized as a mask, and etching (second etching) on the exposed metal layer 203 and Si layer 202 is performed. Finally, as shown in

Fig. 19(e), the resist patterns R3 are removed to obtain circuit patterns.

[0007]

However, the half exposure process using the resist pattern R formed with the thick film portion R1 and the thin film portion R2 as described above involves a problem in that when ] the thickness of the resist pattern R is non-uniform within a substrate plane upon formation of the resist pattern R, the line width of each of the patterns to be formed and the pitch between the patterns vary.

[0008]

In this regard, a concrete description will be made using

Figs. 20(a) to 20(e). Fig. 20(a) shows a case in which the "thickness t2 of a thin film portion R2 in a resist pattern R is formed thicker than the thickness t1 shown in Fig. 19(a).

In this case, etching of a metal film 203 (Fig. 20(b)) and an ashing process (Fig. 20(c)) on the entire resist pattern R are carried out in a manner similar to the process shown in Figs. 19(a) to 19(e).

[0009]

Here, as shown in Fig. 20(c), resist patterns R3 whose film thicknesses are reduced to about half are obtained, but the thickness of a resist film to be removed is the same as that shown in Fig. 19(c). Therefore, the pitch p2 between the pair of resist patterns R3 shown in the drawing becomes narrower than the pitch p1 shown in Fig. 19(c).

Thus, circuit patterns obtained through the etching on the metal film 203 and Si layer 202 (Fig. 20(d)) and the removal of the resist patterns R3 (Fig. 20(e)) became narrow in pitch p2 therebetween as compared with the pitch pl shown in

Fig. 19(e) (the circuit patterns have been made wider in line width).

[0010]

To address the above problem, a predetermined portion at which the thickness of a resist pattern R is formed thicker than a desired value is specified by film-thickness measurement for each mask pattern that causes light to pass therethrough in an exposure process, thereby making exposure sensitivity of the portion higher.

That is, in a pre-bake process for heating a resist film before the exposure process to evaporate a solvent, the quantity of heat to be applied within a substrate plane is set to . be different, and the exposure sensitivity of the predetermined portion is changed, whereby the residual film thickness subsequent to the development is adjusted (in-plane uniformized).

More specifically, a heater used in pre-bake processing is divided into a plurality of areas, and the heater divided into the areas is independently driven and controlled to thereby perform separately temperature adjustments in every area.

Further, temperature adjustment has been performed by changing the height of each proximity pin that supports the substrate (changing the distance between the heater and the substrate).

[0011]

Patent Document 1: JP2007-158253A

SUMMARY OF THE INVENTION

[0012]

A problem arises, however, in that when the residual film thickness is adjusted by the prebake-based heating process as described above, the area of the heater subjected to the above division needs to ensure a certain size in terms of hardware limits, thereby making it unable to perform heating adjustments to the fine areas.

A problem also arises in that since works for changing the height of each proximity pin are inevitably required upon the heating adjustments depending on the height of each proximity pin, production efficiency is degraded.

[0013]

The present invention has been made in view of the above problems of related art. The present invention provides a local site exposure method capable of easily adjusting the amount of light exposure in every small area set within a substrate plane, enhancing the uniformity of a residual resist : 35 film subsequent to a development process and suppressing variations in line width of each of wiring patterns and pitch therebetween.

[0014]

In order to solve the aforementioned problem, the present invention is a local site exposure method that 5 selectively drives a light emitter as a light-emission control unit, which is composed of one or a plurality of light-emitting elements, to emit light therefrom, out of the plurality of light-emitting elements that are linearly arranged above a substrate conveyance path in a direction crossing a substrate conveyance direction, so as to perform an exposure process on a photosensitive film on a substrate which is relatively moved below the light emitter along the substrate conveyance path in the substrate conveyance direction, the local site exposure method comprising: calculating a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the substrate, based on a desired film thickness thereof; specifying at least one light emitter capable of irradiating light onto the predetermined area; deducting, when a further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and setting the deducted value as a corrected set illuminance; and deciding a drive current value based on the corrected set illuminance and causing the one light emitter to emit light by the drive current value.

[0015]

In addition, the present invention is a local site exposure apparatus comprising: a substrate conveyance path; a plurality of light-emitting elements linearly arranged above the substrate conveyance path in a direction crossing a substrate conveyance direction; a light-emission drive unit configured to selectively drive a light emitter as a light-emission control unit, which is composed of one or the plurality of light-emitting elements, to emit light therefrom, so as to perform an exposure process on a photosensitive film on a substrate which is relatively moved below the light emitter along the substrate conveyance path in } the substrate conveyance direction; and a controller configured to control the light-emission drive unit; wherein the controller includes: a target-illuminance calculation unit configured to calculate a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the substrate, based on a desired film thickness thereof; a light-emitter specification unit configured to specify at least one light emitter capable of irradiating light onto the predetermined area; a corrected-illuminance calculation unit configured to deduct, when a further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and to set the deducted value as a corrected set illuminance; and a drive-current-value decision unit configured to decide a drive oo current value based on the corrected set illuminance and to cause the one light emitter to emit light by the drive current value.

[0016]

According to such a structure, a drive current value of the one selected light emitter is set as a value in consideration of an interference illuminance from another light emitter adjacent to the selected light emitter.

Thus, it is possible to irradiate light accurately onto any portion whose film thickness is desired to be reduced, with a preset amount of light exposure (target illuminance), whereby a desired film thickness can be obtained after a development process.

As a result, even when a resist film is caused to have different film thicknesses (thick film portion and thin film portion) in a half exposure process, for example (i.e., a thin film thickness like a thin film portion), it is possible to make uniform the thickness of the resist film thickness subsequent to the development process, and to suppress variations in line width of each of wiring patterns and pitch therebetween.

[0017] ] According to the present invention, there is obtained a local site exposure method capable of easily adjusting the amount of light exposure in every small area set within a substrate plane, enhancing the uniformity of a residual resist film subsequent to a development process, and suppressing variations in line width of each of wiring patterns and pitch therebetween.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018]

Fig. 1 is a perspective view showing an overall schematic structure of one embodiment according to the present invention.

Fig. 2 is a perspective view showing the overall schematic structure of the one embodiment according to the present invention, into which a substrate to be processed is being loaded.

Fig. 3 is a sectional view taken along the arrows A-A in

Fig. 2.

Figs. 4(a) to 4(c) are views schematically showing a placement position of a local site exposure apparatus in photolithography processes.

Figs. 5(a) and ©5(b) are plan views showing an arrangement of light-emitting elements constituting a light source.

Fig. 6 is a flowchart showing a process for determining setting parameters for a light-emission control program incorporated in the local site exposure apparatus of Fig. 1.

Fig. 7 is a plan view of a substrate to be processed in which a local site exposure position on the substrate is indicated in coordinates, for explaining light-emission control of light-emitting elements in the local site exposure apparatus of

Fig. 1. :

Fig. 8 is a table showing examples of setting parameters for the light-emission control program to be executed in the local site exposure apparatus of Fig. 1.

Fig. 9 is a graph showing illuminance curves of ) light-emission control groups constituting a light source in the local site exposure apparatus of Fig. 1.

Fig. 10 is a flowchart showing a process for calculating light-emission drive current values of the light-emission control groups.

Fig. 11 is a flowchart showing a process for specifying a peak irradiation position in each light-emission control group.

Figs. 12(a) and 12(b) are side views for explaining a process for specifying a peak irradiation position in each light-emission control group.

Fig. 13 is a flowchart showing a process for obtaining a relationship between a light-emission drive current value and an illuminance in each light-emission control group, and a relationship between a light-emission drive current value and an interference illuminance in adjacent light-emission control group.

Figs. 14(a) to 14(c) are side views for explaining a process for obtaining a relationship between a light-emission drive current value and an illuminance in each light-emission control group, and a relationship between a light-emission drive current value and an interference illuminance in adjacent fight-emission control group.

Fig. 15 is a flowchart showing a series of operations in the local site exposure apparatus of Fig. 1.

Fig. 16 is a plan view for explaining a local site exposure operation in the local site exposure apparatus of Fig. 1.

Fig. 17 is a graph for explaining a local site exposure operation in the local site exposure apparatus of Fig. 1.

Fig. 18 is a plan view for explaining an application example of the local site exposure method according to the present invention.

Figs. 19(a) to 19(e) are sectional views for explaining a process of forming wiring patterns using a half exposure.

Figs. 20(a) to 20(e) are sectional views showing a process for forming wiring patterns using a half exposure, in which a resist film thickness is thicker than that of Figs. 19(a) to 19(e).

Fig. 21 is flowchart showing a process of another embodiment according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0019]

One embodiment of a local site exposure method according to the present invention will be described herebelow with reference to the accompanying drawings. Fig. 1 is a perspective view showing an overall schematic structure of a local site exposure apparatus 1 according to the present invention, in which the local site exposure method according to the present invention is performed. Fig. 2 is a perspective view of the local site exposure apparatus 1 as viewed from the angle different from Fig. 1, into which a glass substrate G as a substrate to be processed is being loaded. Fig. 3 is a sectional view taken along the arrows A-A in Fig. 2. Figs. 4(a) to 4(c) are views schematically showing a placement position of the local site exposure apparatus 1 in photolithography processes.

[0020]

As shown in Figs. 4(a) to 4(c), for example, the local site exposure apparatus 1 shown in Figs. 1 to 3 is placed within a unit that performs a series of photolithography processes while horizontally conveying (hereinafter called a horizontal conveyance) a substrate to be processed in a horizontal state in an X direction.

Namely, in the the photolithography processes, a resist coating apparatus 51 (CT) and a depressurizing and drying apparatus 52 (DP) are placed. The resist coating apparatus 51 (CT) applies a resist solution used as a photosensitive fiim onto the substrate, and the depressurizing and drying apparatus 52 (DP) dries a resist film (photosensitive film) on the substrate within a chamber under reduced pressure. Further, a pre-baking apparatus 53 (RPB), a cooling apparatus 54 (COL), an exposure apparatus 55 (EXP) and a developing apparatus 56

(DEV) are placed in this order. The pre-baking apparatus 53 ] (RPB) heats to fix the resist film to the substrate G. The cooling apparatus 54 (COL) cools it to a predetermined temperature. The exposure apparatus 55 (EXP) exposes the resist film to have a predetermined circuit pattern. The developing apparatus 56 (DEV) develops a post-exposure resist film.

[0021]

The local site exposure apparatus 1 (AE) according to the present invention is placed on any position shown in Figs. 4(a) to 4(c), for example. Namely, the local site exposure apparatus 1 is arranged on a predetermined position subsequent to the pre-baking apparatus 53 (RPB) and prior to the developing apparatus 56 (DEV).

In the local site exposure apparatus 1 (AE) arranged in this way, when a plurality of substrates G are continuously processed with the use of a positive resist is used, for example, a local site exposure (for reduction in film thickness) is performed on predetermined areas of all the substrates G, such that the predetermined areas have wider wiring patterns than those of the other areas and narrower pattern-to-pattern pitches than those of the other areas.

In the following embodiments, although a process with the positive resist is explained by way of example, the local site exposure apparatus according to the present invention can be applied even to a process where a negative resist is used. In such a case, local site exposure is performed on a predetermined area where the resulting resist film is desired to be thicker.

[0022]

The structure of the local site exposure apparatus 1 is explained in detail. As shown in Figs. 1 to 3, the local site exposure apparatus 1 includes a substrate conveyance path 2 for conveying a substrate G in the X direction, by a plurality of rollers 20 rotatably provided on a substrate pedestal 100. The substrate conveyance path 2 has the plurality of columnar rollers 20 each extending in a Y direction. The rollers 20 are respectively rotatably disposed on the substrate pedestal 100 at predetermined intervals therebetween in the X direction. The rollers 20 are interlockably provided by belts (not shown).

Each of the rollers 20 is connected to a roller drive device (not shown) such as a motor or the like. In Fig. 1, the rollers 20 lying on the front side of Fig. 1 are shown in partly broken form, in order to facilitate explanation of the structure of the local site exposure apparatus 1.

[0023]

As shown in the drawings, a light irradiation unit 3 for performing local site exposure (UV-light radiation) on the substrate G is disposed above the substrate conveyance path 2.

The light irradiation unit 3 is provided with a linear light source 4 that extends in a widthwise direction of a substrate (substrate widthwise direction) (Y direction). The substrate G is conveyed below the light source 4.

The linear light source 4 is composed of a plurality of

UV-LED elements L that are arranged on a circuit board 7.

Each of the UV-LED element L emits UV light having a predetermined wavelength (wavelength near any of a g ray (436 nm), an h ray (405 nm) and an i ray (364 nm)). For example,

Fig. 5(a) is a plan view of the circuit board 7 seen from below.

As shown in Fig. 5(a), the plurality of UV-LED elements L are arranged on the circuit board 7 in three rows.

[0024]

As shown in Fig. 5(a), the UV-LED elements L (nine in Fig. 5(a)) serve as one light-emission control unit (light-emission control group GR). The plurality of light-emission control groups GR; to GR, (n is a positive integer) are arranged in a line.

By using these LED elements L as the light-emission control unit, variations in emitted-light illuminance between the light-emitting elements can be suppressed.

When the light source 4 is composed of the smaller number of UV-LED elements L, it is desired that, as shown in Fig. 5(b), the UV-LED elements L are arranged in zigzags, such that the elements L overlap in the substrate conveyance direction (X . direction) and the substrate widthwise direction (Y direction).

[0025]

As shown in Fig. 3, a light radiation window 6 formed of a light diffusion plate is provided below the light source 4.

Namely, the light radiation window 6 is disposed between the light source 4 and the substrate G as an object to be irradiated.

Due to the provision of the light radiation window 6 formed of the light diffusion plate, light radiated from the light source 4 is moderately diffused by means of the light radiation window 6, so that pieces of light from the UV-LED elements L adjacent to each other are irradiated downward while being combined to each other in a linear manner.

In addition, as shown in Fig. 3, light reflection walls 8 extending in the substrate widthwise direction (Y direction) are provided on the front and rear sides of the UV-LED elements L.

Thus, light emitted from each UV-LED element L is efficiently radiated downward through the light radiation window 6.

[0026]

The respective light-emission control groups GR constituting the light source 4 are independently controlled in its light-emission drive, by a light-emission drive unit 9 (Fig. 1).

Further, forward current values supplied to the light-emission control groups GR (the UV-LED elements L thereof) can be respectively controlied. That is to say, the UV-LED elements L of the light-emission control groups GR are so operated by the light-emission drive unit 9 that a radiation illuminance of emitted light can be varied correspondingly to currents supplied thereto.

The drive of the light-emission drive unit 9 is controlled by a controller 40 formed of a computer.

[0027]

The light irradiation unit 3 is capable of varying a height of a position from which light is emitted to the substrate G that is conveyed on the substrate conveyance path 2. Namely, as shown in Fig. 3, the light irradiation unit 3 includes a support frame 15 and horizontal plate parts 15a provided at opposed ] ends of the support frame 15 in a lengthwise direction (Y direction). The horizontal plate parts 15a are supported from below by a pair of elevating shafts 11. The elevating shafts 11 are vertically movable by an elevation drive unit 12 (elevating means) formed of, e.g., an air cylinder disposed on the substrate pedestal 100.

As shown in Figs. 2 and 3, at a position where the light irradiation unit is 3 is moved to the lowest position, lower surfaces of the horizontal plate parts 15a of the support frame are in contact with support members 16 disposed on the substrate pedestal 100.

[0028]

On the substrate pedestal 100, cylindrical guide members 15 13 are respectively provided upright on right and left sides of the elevation drive unit 12. On the other hand, guide shafts 14 to be engaged with the guide members 13 are respectively provided on the lower surfaces of the horizontal plate parts 15a of the support frame 15, on the right and left sides of the elevating shafts 11. Thus, when the light irradiation unit 3 is moved upward or downward, the guide shafts 14 are vertically slid in the guide members 13, so that a horizontality of the light radiation window 6 of the light irradiation unit 3 can be accurately maintained.

[0029]

An illuminance sensor unit 30 is disposed below the light irradiation unit 3. The illuminance sensor unit 30 detects an illuminance (radiant flux) of light that has been radiated from the light source 4 to transmit through the light radiation window 6.

The illuminance senor unit 30 is provided with an illuminance sensor 31 whose signal detecting part faces upward.

The illuminance sensor 31 is disposed on a moving plate 32 that is movable in the substrate widthwise direction (Y direction). A pair of rails 33a and 33b extending in the substrate widthwise direction along the light source 4 are disposed on the substrate pedestal 100 directly below the light source 4. ; [0030]

A linear motor 34 movable along the pair of rails 33a and 33b is provided on the lower side of the moving plate 32. The linear motor 34 is supplied with power through a power supply cable (not shown) placed in a flexible bellows-like cable cover 35. A control cable (not shown) for controlling an operation of the linear motor 34 by the controlier 40 is provided in the cable cover 35.

[0031] ~ That is to say, the illuminance sensor 31 on the moving plate 32 is movable along the rails 33a and 33b in the substrate widthwise direction. During the movement, the detecting part of the illuminance senor 31 is configured to be flush with the height of the surface of the substrate. In other words, the illuminance sensor 31 is retractable in the substrate widthwise direction, along irradiation positions of light from the light source 4 to the substrate G.

When the substrate G is conveyed in the local site exposure apparatus 1, the illuminance sensor 31 is controlled by the controller 40, such that the illuminance sensor 31 is withdrawn toward one end side of the rails 33a and 33b so as to avoid interference with the substrate G.

The illuminance sensor unit 30 as structured above is used to measure emitted-light illuminance of each light-emission control group GR and to obtain a relationship between a current value supplied to the light-emission control group GR (the LED elements L thereof) and the emitted-light illuminance.

[0032]

As shown in Fig. 3, the local site exposure apparatus 1 is provided with a substrate detection sensor 39 on the upstream side of the light irradiation unit 3. The substrate detection senor 39 detects a predetermined point (e.g., a distal end) of the substrate G conveyed on the substrate conveyance path 2.

A detected signal of the substrate detection sensor 39 is outputted to the controller 40. Since the substrate G is ] conveyed on the substrate conveyance path 2 at a predetermined speed (e.g., 50 mm/sec), the controller 40 can acquire a position of the conveyed substrate G, based on the detected signal, the time subsequent to the acquisition of the detected signal, and the substrate conveyance speed.

[0033]

The controller 40 has a light-emission control program P in a predetermined recording area. The light-emission control program P is executed to control, at a predetermined timing, a brightness of each light-emission control group GR of the light source 4, i.e., a value of current supplied to each light-emission control group GR (UV-LED elements L constituting the light-emission control group GR).

The light-emission control program P contains a required illuminance of light to be radiated onto a predetermined position of the substrate G (a value of current supplied to each light-emission control group GR), information for specifying the light-emission control group GR from which light is emitted under control onto the predetermined position of the substrate

G, etc., which have been set in advance as parameters of a recipe used upon execution of the light-emission control program P.

[0034]

A preparation process in the local site exposure apparatus 1 is described with reference to Figs. 6 to 8. This preparation process is performed for every mask pattern through which light transmits upon an exposure process, so as to determine parameters (called recipe) related to the exposure process. To be specific, the preparation process is carried out to determine respective parameters in a recipe table T1 as shown in Fig. 8. The recipe table T1 is stored and held in the controller 40.

Either of two types of sampling substrates (called sampling targets 1 and 2) is used in the preparation process.

First, the sampling target 1 is a substrate to be processed which has been subjected to a half exposure process and a . development process after a resist application. On the other hand, the sampling target 2 is a substrate to be processed on which wiring patterns have been formed by the normal photolithography processes (processes not through the local site exposure apparatus 1).

[0035]

As shown in Fig. 6, in the case of the sampling target 1, a plurality of substrates to be processed, which have been subjected to a half exposure process and a development process after a resist application, are sampled (step Stl in Fig. 6).

Then, a residual resist film thickness in a plane of each sampled substrate G is measured (step St 2 of Fig. 6). As schematically shown in Fig. 7, a predetermined area AR to be reduced in film thickness is specified by a plurality of two-dimensional coordinate values (x, y) (step St5 in Fig. 6).

[0036]

On the other hand, as shown in Fig. 6, in the case of the sampling target 2, a plurality of substrates to be processed, on which wiring patterns have been formed by the normal photolithography processes (processes not through the local site exposure apparatus 1), are sampled (step St3 in Fig 6).

Then, a line width of each wiring pattern present in a plane of each sampled substrate G and a pitch between the wiring patterns are measured (step St4 of Fig. 6). As schematically shown in Fig. 7, a predetermined area AR to be reduced in film thickness is specified by a plurality of two-dimensional coordinate values (Xx, y) (step St5 of Fig. 6).

[0037]

As shown in the recipe table T1 of Fig. 8, after the predetermined area AR has been specified, a target-illuminance calculating unit 40a of the controller 40 calculates a reduced film thickness necessary for each coordinate value in the predetermined area AR (e.g., 1000 A in the case of coordinates (x1, yl1)) (step St6 in Fig. 6). Further, the target-illuminance calculating unit 40a calculates a target illuminance of light to be irradiated for the reduction in film thickness (e.g., 0.2 m3/cm? in ] the case of coordinates (X1, Y1)), based on various conditions such as a value of the reduced film thickness and a resist type, etc. (step St7 in Fig. 6).

[0038]

As shown in recipe table T1 of Fig. 8, a light-emitter specification unit 40b of the controller 40 specifies the light-emission control group GR capable of irradiating light in accordance with each coordinate value in the predetermined area AR (step St8 in Fig. 6). Then, a drive-current-value decision unit 40d of the controller 40 calculates a light-emission drive current value by which an area irradiated by each light-emission control group GR have a target illuminance (step

St9 in Fig. 6).

In this manner, all the parameters are determined along the flowchart of Fig. 6, and these parameters are set in the recipe table T1 of Fig. 8, whereby the preparation process is completed (step St10 in Fig. 6).

[0039]

Next, the method of calculating a light-emission drive current value in the step St9 of Fig. 6 is explained in detail. In the calculation of the light-emission drive current value, a current value is calculated in consideration of an illuminance of interference light (called interference illuminance) emitted from the light-emission control groups GR adjacent to each other.

More specifically, when the three adjacent light-emission control groups GRm-1, GRm and GRm+1 (mM is a positive integer, m<n) are caused to emit light of illuminance Q1, respectively, as shown in the graph of Fig. 9, illuminances of the respective light-emission control groups GR respectively define convex illuminance curves C1, C2 and C3 in the substrate widthwise direction.

[0040]

A peak illuminance of each of the illuminance curves C1,

C2 and C3 is Ql. However, since bottom parts of the adjacent curves overlap, the illuminances are multiplied as a whole,

whereby there is defined a curve C having a peak illuminance ] Q2 that is larger than the peak illuminance Q1.

That is to say, in the case where the target illuminance of each of the light-emission control groups GRm-1, GRm and GRm+1 is Q1, even though a drive current is controlled such that the respective light-emission control groups GR emit light of the illuminance Q1, the actual illuminance becomes larger than the illuminance Q1. Thus, light-emission drive currents of the respective light-emission control groups GR should be determined in consideration of an interference illuminance from the adjacent light-emission control group(s) GR.

[0041]

In order thereto, the controller 40 calculates light-emission drive current values for the respective light-emission control groups GR, by using a relational expression (1) representing a relationship (linearity) between an illuminance Q and a drive current I, a relational expression (2) representing a relationship between an interference illuminance Qi.; of the one adjacent light-emission control group

GR and the drive current I, and a relational expression (3) representing a relationship between an interference illuminance

Qi+1 of the other adjacent light-emission control group GR and the drive current I.

In the expressions (1) to (3), a, ai: and aj+; are slope coefficients, and b, bi.; and b+; are intercepts. These relational expressions (1) to (3) are previously set for the respective light-emission control groups GR, and are stored in a predetermined storage area of the controller 40. [Expression 1]

Q=a-I+b --+ (1)

Qi-1=aj-1 + I+biy +++ (2)

Qi+1=ai+1 * I+bisy =-- (3)

[0042]

Calculation of a light-emission drive current value with the use of these relational expressions (1) to (3) is described.

Fig. 10 is a flowchart showing a process for calculating a light-emission drive current value of the light-emission control group GRq (light emitter) which is located on a center position of the three adjacent light-emission control groups GRm-1, GRm and GR +1, for example.

[0043]

First, target illuminances Qm-1, Qm and Qm+: are set for the three light-emission control groups GRm-1, GR, and GRm+1, respectively (step Stpl in Fig. 10).

After the target illuminances have been set, a corrected-illuminance calculation unit 40c of the controller 40 calculates a current In-: from the expression (1) relating to the one light-emission control group GRp-: adjacent to the light-emission control group GRn. Then, by substituting the value into the relational expressions (2) and (3), respectively, the corrected-illuminance calculation unit 40c calculates interference illuminances Qm-1¢-1) and Qm-1¢+1) (step Stp2 in Fig. 10).

[0044]

In addition, the corrected-illuminance calculation unit 40c of the controller 40 calculates a current Ins: from the expression (1) relating to the other light-emission control group

GRm+1 adjacent to the light-emission control group GRn. Then, by substituting the value into the relational expressions (2) and (3), respectively, the corrected-illuminance calculation unit 40c calculates interference illuminances Qm+1¢-1) and Qm+ici+1) (step

Stp3 in Fig. 10).

[0045]

Further, the corrected-illuminance calculation unit 40c of the controller 40 calculates a corrected set illuminance Qrm by the following expression (4), with the use of the interference iluminances Qm-1¢+1) and Qm+1¢-1) with respect to the light-emission control group GR, (step Stp4 in Fig. 10). [Expression 2]

Qrm=Qm-Qm-1(i+1)=Qm+1¢-1) + (4)

[0046]

Then, the corrected-illuminance calculation unit 40c of the controller 40 repeats the predetermined number of times ] (e.g., five times) the process by the steps Stp2 to Stp4, such that the illuminance considering the interference illuminances (Qrm+Qm-1i+1)+Qm+1¢-1)) gradually comes close to the target illuminance Qn (step Step 5 in Fig. 10). Namely, there is repeated a process in which an interference illuminance is calculated anew in a first corrected-illuminance calculation unit 40c-1 based on the corrected set illuminance Qrm,, which has been calculated in the step Stp4, and the corrected set illuminance Qrm is renewed in a second corrected-illuminance calculation unit 40c-2 by deducting the new interference illuminance from the target illuminance Qn. Thus, the value of the interference illuminance (the vaiue of the set illuminance

Qrm) is gradually corrected so as to be converged to the predetermined value.

[0047]

After the corrected set illuminance Qrm, has been calculated in this manner, the drive-current-value decision unit 40d of the controller 40 substitutes the value into the above relational expression (1), whereby a drive current value of the light-emission control group GR, (a current value to be set in the recipe table T1 of Fig. 8) is calculated (step Stp6 in Fig. 10).

Further, the control unit 40 performs the process by the respective steps Stpl to Stp6 for each of the light-emission control group GR whose light emission should be controlled (step Stp7 in Fig. 10).

[0048]

As described above, the relational expressions (1) to (3) are previously stipulated for each light-emission control group

GR, and are stored in a predetermined storage area of the controller 40. The concrete setting process is described below.

When the relational expressions (1) to (3) are set, it is necessary to perform illuminance measurement for each light-emission control group GR. In order thereto, in each light-emission control group GR, there is firstly specified a position at which an illuminance of light emitted and irradiated therefrom is highest (peak). . Namely, as shown in Fig. 9, since the illuminance curve of light emitted from the light-emission control group GR has a convex shape, the illuminance differs in an area irradiated by the one group GR. Thus, the controller 40 detects a position at which the illuminance has a peak in the irradiated area (a position at which the illuminance has a peak in the substrate widthwise direction), and specifies a position at which the illuminance measurement is performed.

[0049]

The process is described with reference to Fig. 11 (flowchart). First, with the light source 4 (light radiation window 6) being set at a predetermined height, the linear motor 34 is driven by a control signal from the controller 40, such that the illuminance sensor 31 located on a waiting position is moved to a position below the light radiation window 6, as shown in Fig. 12(a) (step Spl in Fig. 11). Fig 12(a) shows a state in which the illuminance sensor 31 is located directly below the light-emission control group GR; which is placed on an endmost position (n=1) of the light source 4. Since a distance between the light radiation window 6 and the illuminance sensor 31 is equal to a distance between the light radiation window 6 and the upper surface of the substrate G, the illuminance detected by the illuminance sensor 31 corresponds to an illuminance of light irradiated onto the substrate G.

[0050]

Then, only the light-emission control group GR; is caused to emit light by a predetermined drive current (step Sp2 in Fig. 11). While detecting the illuminance, the illuminance sensor 31 scans the area irradiated by the light-emission control group

GR; (the illuminance sensor 31 moves in the substrate widthwise direction) (step Sp3 in Fig. 11).

A position at which the highest illuminance is detected in the step Sp3 is specified as a peak illuminance position of the light-emission control group GR;, and a position of the illuminance sensor 31 on the moving axis is stored in the

) controller 40 (step Sp4 in Fig. 11). . [0051]

Following thereto, as shown in Fig. 12(b), the illuminance sensor 31 is moved to a position directly below the light-emission control group GR,. Thereafter, the process by the steps Sp2 to Sp4 is performed so as to specify a peak illuminance position of the light-emission control group GRa.

In this manner, peak illuminance positions in all the light-emission control groups GR: to GR, are sequentially specified (step Sp5 in Fig. 11).

[0052]

As described above, after the peak illuminance position of each light-emission control group GR has been specified, the illuminance measurement (called linearity measurement) for obtaining a relationship between an illuminance Q and a drive current I is performed for each light-emission control group GR.

The linearity measurement is described with reference to flowcharts of Figs. 13(a) and 13(b).

As shown in Fig. 14(a), when the linearity measurement is performed in the light-emission control group GRn, the illuminance sensor 31 is firstly located on the peak illuminance position of the light-emission control group GR, (step Sel in Fig. 13(a)).

[0053]

After that, the illuminance measurement is performed by the illuminance sensor 31 (step Se2 in Fig. 13(a)). As shown in the flowchart of Fig. 13(b), the illuminance measurement by the illuminance sensor 31 is performed such that a light-emission drive current of the light-emission control group GR; is increased stepwise from a minimum current (0A, step Sep 1 in

Fig. 13(b)) to a maximum rated current (I=5, step Sep 3 in Fig. 13(b)) by a predetermined increase width (e.g., 0.5A, step Sep4 in Fig. 13(b)).

In addition, the illuminance sensor 31 measures an illuminance Qm of light when it is irradiated by each current (step Sep 2 in Fig. 13(b)).

) Then, the controller 40 calculates a slope coefficient am ] and an intercept by in the above relational expression (1), from data columns representing a relationship between the acquired light-emission drive current and the illuminance (step Sep 5 in

Fig. 13(b)).

[0054]

Thereafter, as shown in Fig. 14(b), the illuminance senor 31 is moved to the peak illuminance position of the light-emission control group GRm+: (step Se3 in Fig. 13(a)).

Then, in the light-emission control group GRm, a light-emission drive current is increased stepwise from a minimum current (OA, step Sep 1 in Fig. 13(b)) to a maximum rated current (I=5, step Sep 3 in Fig. 13(b)) by a predetermined increase width (e.g., 0.5A, step Sep4 in Fig. 13(b)).

In addition, the illuminance sensor 31 measures an interference illuminance Q;+1 of interference light when it is irradiated by each current, at the peak illuminance position of the light-emission control group GRm+1 (STEP Sep2 in Fig. 13(b)).

Then, the controller 40 calculates a slope coefficient aj+1 and an intercept bi+: in the above relational expression (3), from data columns representing a relationship between the acquired light-emission drive current and the illuminance (step

Sep 5in Fig. 13(b)).

[0055]

After that, as shown in Fig. 14(c), the illuminance sensor 31 is moved to the peak illuminance position of the light-emission control group GRm-1 (step Se5 in Fig. 13(a)).

Then, in the light-emission control group GRn, a light-emission drive current is increased stepwise from a minimum current (OA, step Sep 1 in Fig. 13(b)) to a maximum rated current (I=5, step Sep 3 in Fig. 13(b)) by a predetermined increase width (e.g., 0.5A, step Sep4 in Fig. 13(b)). :

In addition, the illuminance sensor 31 measures an interference illuminance Qi.; of interference light when it is ; irradiated by each current, at the peak illuminance position of the light-emission control group GRm.1 (STEP Sep2 in Fig. 13(b)).

Then, the controller 40 calculates a slope coefficient ai; and an intercept bi.; in the above relational expression (2), from data columns representing a relationship between the acquired light-emission drive current and the illuminance (step Sep 5 in

Fig. 13(b)).

[0056]

In this manner, by performing the process by the steps

Sel to Se6 shown in Fig. 13(a), the above expressions (1) to (3) about the one light-emission control group GR, are specified.

Then, by performing the process by the steps Sel to Se6 for all the light-emission control groups GR; to GR, the linearity measurement of the light source 4 is completed (step Se7 in Fig. 13(a)).

The order of the steps Sel and Se2, the steps Se3 and

Se4, and the steps Se5-and Seb in Fig. 13(a) is not limited to the aforementioned description, and the order of measurement may be changed (for example, the steps Se5 and Se6 are performed at first, then the steps Sel and Se2 are performed, and the steps Se3 and Se4 are finally performed).

[0057]

Next, a series of operations for local site exposure by the local site exposure apparatus 1 is described with reference to

Figs. 15 to 17.

When the substrate G is conveyed on the substrate conveyance path 2 and detected by the substrate detection sensor 39 after the completion of the prior process, a substrate detection signal of the substrate detection sensor 39 is supplied to the controller 40 (step S1 in Fig. 15).

The controller 40 starts to acquire (detect) a conveyance position of the substrate G, based on the substrate detection signal and the substrate conveyance speed (step S2 of Fig. 15).

At a timing when a predetermined area to be locally ] exposed pass below the light irradiation unit 3 (step S3 in Fig. 15), the controller 40 controls light emission of the light-emission control groups GR; to GR, constituting the light source 4 as schematically shown in Fig. 16 (step S4 in Fig. 15).

When light is emitted and irradiated onto a predetermined area AR of the substrate G, for example, light emitted from the light-emission control groups GR,.; and GR,., which are placed above the predetermined area AR of the substrate G, is controlled. More specifically, as shown in the graph of Fig. 17 (magnitude of radiant flux (watt) relative to the elapse of time for each light-emission control group GR,.;,

GRp-2), a drive current to be supplied is controlled such that the magnitude of the radiant flux W varies during a period in which the predetermined area AR of the substrate G passes below the light source.

Namely, not only the light is merely irradiated onto the : predetermined area AR of the substrate G, but also the light of a given illuminance is irradiated onto each local position in the predetermined area AR.

[0059]

When there is another area to be locally exposed on the substrate G (step S5 in Fig. 15), the light emitted from the light-emission control group GR is controlled in this area.

When there is no other area to be locally exposed (step S5 in

Fig. 15), the local site exposure process on the substrate G is ended.

As shown in Fig. 4, the exposure process on the substrate

G is completed, along with the exposure process (EXP) performed before or after the local site exposure process (AE) in addition to the local site exposure process (AE). Then, the exposed resist film is developed by the developing apparatus 56 (DEV).

[0060]

According to the embodiment of the present invention as described above, in a local site exposure process on any portion having a resist film thickness formed on the substrate G, the . plurality of light-emission control groups GR are formed by the plurality of UV-LED elements L that are linearly placed in the substrate widthwise direction (Y direction). Light from the selected light-emission control group GR is controlled with respect to the substrate G conveyed below the light-emission control group GR.

At this time, a light-emission drive current value of the selected light-emission control group GR is set as a value in consideration of an interference illuminance of the adjacent light-emission control group GR.

[0061]

Although the above embodiment has shown an example in which an area where additional exposure is locally carried out is within an effective area of a substrate plane, the present invention is not limited thereto.

For example, as shown in Fig. 18, the present invention can also be used in a process for exposing an edge area (periphery of the effective area) E1 of the substrate G.

In addition, although the above embodiment has shown an example in which each Ilight-emission control group composed of the plurality of UV-LED elements L serve as a light-emission control unit, the present invention is not limited thereto, and each of the UV-LED elements L may serve as a light-emission control unit so as to achieve finer local site ] exposure.

[0062]

Although the above embodiment has explained as an example where an exposure process is carried out while horizontally conveying a substrate G, the present invention is not limited thereto. An exposure process may be performed on a substrate to be processed that is held in a stationary state in a chamber.

In this case, a linear light source may be moved with respect to the substrate to be processed (i.e., the linear light source and the substrate to be processed are moved in opposite directions relatively).

In addition, although the above embodiment has explained as an example where the thickness of a residual resist film subsequent to a half exposure process is made uniform, a local site exposure method according to the present invention can be applied to a case not limited to the half exposure process.

For example, even when the normal exposure process other than the half exposure process is carried out, the thickness of a residual resist film can be made uniform in a plane, by application of the local site exposure method according to the present invention.

In addition, the present invention is not limited to the step St6 and St7 in Fig. 6 in which a required illuminance is determined based on a required residual film thickness. A pattern line width after development may be measured to determine data about a correlation between the pattern line width and the illuminance, thereby creating a recipe table based on the correlation data.

[0063]

Next, another embodiment is explained. Explanation of the same parts as those of the above embodiment is omitted.

This embodiment is described with reference to Fig. 21.

Fig. 21 is a modification example of Fig. 10.

First, target illuminances Qi, Q2, + Qm are set for the respective light-emission control groups GR, GR; --+ GRn (step } Stp1l in Fig. 21).

Then, light-emission drive currents of the light-emission control groups GR;, GR; --- GRy are calculated under a condition in which light interference of the adjacent light-emission control group is neglected (step Stp2 in Fig. 21).

[0064]

These processes are performed for all the light-emission control groups GR;, GR; --- GRyn (step Stp3 in Fig. 21).

Thereafter, an illuminance Qi) of a position directly below the light-emission group GR;, to which light is emitted from the light-emission group GR, is calculated (step Stp4 in Fig. 21).

Then, an interference illuminance Qi) of light from the light-emission control group GR; interfering the light-emission control group GR; is calculated (step Stp5 in Fig. 21). An actual illuminance directly below the light-emission control group GR; is equal to a value Qi(1)+Q1(2).

[0065]

Thereafter, an interference illuminance Qx) of light from the light-emission control group GR; interfering the light-emission control group GR; is calculated (step Stp6 in Fig. 21). Then, an illuminance Q(z) of a position directly below the light-emission group GR, to which light is emitted from the light-emission group GR, is calculated (step Stp7 in Fig. 21).

Then, an interference illuminance Qua) of light from the light-emission control group GRj3 interfering the light-emission control group GR; is calculated (step Stp8 in Fig. 21). An actual illuminance directly below the light-emission control group GR; is equal to a value Q2(1)+Q202)+Q2(3).

[0066]

Similarly, an interference illuminance Qm-im-2) of light from the light-emission control group GRpn.» interfering the light-emission control group GRm-1 is calculated (step Stp9 in Fig. 21). Then, an illuminance Qm-1(m-1) Of @ position directly below the (m-1)™ light-emission control group GRm-1, to which light is emitted from the light-emission control group GRp.1, is calculated (step Step 10 in Fig. 21). Then, an interference j illuminance Qm-1(m) Of light from the light-emission control group

GR interfering the light-emission control group GRm.1 iS calculated (step S11 in Fig. 21). An actual illuminance directly below the light-emission control group GRn-1 is equal to a value

Qm-1(m-2)+Qm-1(m-1)+Qm-1(m).

[0067]

Then, an interference illuminance Qm(m-1) of light from the (m-1)™ light-emission control group GRm.: interfering the light-emission control group GRp, is calculated (step Stpl2 in Fig. 21). Then, an illuminance Qmm) of a position directly below the light-emission control group GRn,, to which light is emitted from the light-emission control group GRn, is calculated (step Stpl3 in Fig. 21). An actual illuminance directly below the light-emission control group GR, is equal to a value

Qm(m-1)+Qm(m).

[0068]

Then, corrected set illuminances Qri, Qrz, +++ Qrm-1, Qrm of the light-emission control groups GR;, GR, +, GRy are calculated as follows (step Stpl4 in Fig. 21).

Qr:=Qi1(1)-Qu(2)

Qr2=Q22)-Q2(1)-Q2(3)

Qrm-1=Qm-1(m-1)"Qm-1(m-2)=Qm-1(m)

Qrm=Qm(m)~Qm(m-1)

[0069]

Then, from the corrected set illuminances Qry, Qra, ---

Qrm, drive current values of the respective light-emission control groups GRi, GRy, :-+ GR are calculated (step Stpl5 in Fig. 21).

Then, the process by the steps Stp4 to Stpl5 is repeated the predetermined number times, or the process by the steps

Stp4 to Stpl5 is repeated until a sum of the corrected set illuminance Qrmn of the light-emission control group GRq, the illuminance of light going from the light-emission control group

GRm-1 to the light-emission control group GR.,, and the ) iluminance of light going from the light-emission control group

GRm+1 to the light-emission control group GR,, becomes not less than the target illuminance Qm-:-a; and not more than the set illuminance Qm-1+ai, i.e, Qm-1-a8i £ Qm-1+Qm-1(m)+Qm-1(m-2) <

Qm-1+a; (step Stp16 in Fig. 21).

In this manner, drive current values of the respective light-emission control groups GR;, Gr, : +: GRy, may be calculated.

[0070]

In the above embodiment, light-emission drive current value are determined from the required illuminance, and an illuminance is controlled. At this time, the height of the light irradiation unit 3 is fixed, but a vertical position thereof may be suitably adjusted and changed.

Even if a light-emission drive current is constant, for example, an illuminance of each UV-L+ED element L may be reduced due to its secular deterioration. Therefore, when a desired illuminance is not obtained even though the maximum current is applied to the UV-LED element L as a result of the measurement of illuminance, the light irradiation unit 3 can be placed closer to the substrate G, and an illuminance thereof can be measured again. Then, when the desired illuminance is obtained, a vertical position at that time is newly set as the vertical position of the light irradiation unit 3.

Claims

1. A local site exposure method that selectively drives a light emitter as a light-emission control unit, which is composed of one or a plurality of light-emitting elements, to emit light therefrom, out of the plurality of light-emitting elements that are linearly arranged above a substrate conveyance path in a direction crossing a substrate conveyance direction, so as to perform an exposure process on a photosensitive film on a substrate which is relatively moved below the light emitter along the substrate conveyance path in the substrate conveyance direction, the local site exposure method comprising: calculating a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the substrate, based on a desired film thickness thereof; specifying at least one light emitter capable of irradiating light onto the predetermined area; deducting, when a further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and setting the deducted value as a corrected set illuminance; and deciding a drive current value based on the corrected set illuminance and causing the one light emitter to emit light by the drive current value.

2. The local site exposure method according to claim 1, wherein in deciding a drive current value based on the corrected set illuminance and causing the one light emitter to emit light by the drive current value, the drive current value is calculated by substituting the corrected set illuminance into an expression representing a relationship between an illuminance measured in an area irradiated by the one light emitter when only the one light emitter is caused to emit light, and a value of a drive current applied to the one light emitter.

3. The local site exposure method according to claim 1 or 2, wherein in deducting, when the further light emitter adjacent to the one light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and setting the deducted value as a corrected set illuminance, the illuminance of interference light emitted from the further light emitter adjacent to the one light emitter is calculated based on an expression representing a relationship between an illuminance measured in the predetermined area corresponding to the one light emitter when only the further light emitter is caused to emit light, and a value of a drive current applied to the further light emitter.

4, The local site exposure method according to any one of claims 1 to 3, wherein in deducting, when the further light emitter adjacent to the one light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter from the target illuminance, and setting the deducted value as a corrected set illuminance, there are included: a first step of calculating an illuminance of interference light emitted from the further light emitter, based on the corrected set illuminance; a second step of deducting the illuminance of interference light calculated in the first step, from the target illuminance, and renewing the deducted value as a new corrected set illuminance; and a step of repeating, the predetermined number of times, the first step and the second step.

5. A local site exposure apparatus comprising:

a substrate conveyance path;

. a plurality of light-emitting elements linearly arranged above the substrate conveyance path in a direction crossing a substrate conveyance direction; a light-emission drive unit configured to selectively drive a light emitter as a light-emission control unit, which is composed of one or the plurality of light-emitting elements, to emit light therefrom, so as to perform an exposure process on a photosensitive film on a substrate which is relatively moved below the light emitter along the substrate conveyance path in the substrate conveyance direction; and a controller configured to control the light-emission drive unit; wherein the controller includes: a target-illuminance calculation unit configured to calculate a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the substrate, based on a desired film thickness thereof; a light-emitter specification unit configured to specify at least one light emitter capable of irradiating light onto the predetermined area; a corrected-illuminance calculation unit configured to deduct, when a further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and to set the deducted value as a corrected set illuminance; and a drive-current-value decision unit configured to decide a drive current value based on the corrected set illuminance and to cause the one light emitter to emit light by the drive current value.

6. The local site exposure apparatus according to claim 5, wherein, in the target-illuminance calculation unit configured to calculate a target illuminance of light to be irradiated onto a predetermined area of the photosensitive film formed on the

. substrate, based on a film thickness thereof, the drive current value is calculated by substituting the corrected set illuminance into an expression representing a relationship between an illuminance measured in an area irradiated by the one light emitter when only the one light emitter is caused to emit light, and a value of a drive current applied to the one light emitter.

7. The local site exposure apparatus according to claim 5 or 6, wherein in the corrected-illuminance calculation unit configured to deduct, when the further light emitter adjacent to the one specified light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and to set the deducted value as a corrected set illuminance, the illuminance of interference light emitted from the further light emitter adjacent to the one light emitter is calculated based on an expression representing a relationship between an illuminance measured in the predetermined area corresponding to the one light emitter when only the further light emitter is caused to emit light, and a value of a drive current applied to the further light emitter.

8. The local site exposure apparatus according to any one of claims 5 to 7, wherein: the corrected-illuminance calculation unit, which is configured to deduct, when the further light emitter adjacent to the one light emitter is capable of irradiating light onto the predetermined area, an illuminance of interference light emitted from the further light emitter, from the target illuminance, and to set the deducted value as a corrected set illuminance, includes: a first corrected-illuminance calculation unit configured to calculate an illuminance of interference light emitted from the further light emitter, based on the corrected set illuminance, and a second corrected-ililuminance calculation unit configured to deduct the illuminance of interference light ) calculated by the first corrected-illuminance calculation unit from the target illuminance, and to renew the deducted value as a new corrected set illuminance; and the corrected-illuminance calculation unit is configured to repeat, the predetermined number of times, an operation of the first corrected-illuminance calculation unit and an operation of the second corrected-illuminance calculation unit.