CN102680917A - Micro-mechanical magnetic field sensor and preparation method thereof - Google Patents
Micro-mechanical magnetic field sensor and preparation method thereof Download PDFInfo
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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Abstract
The invention provides a micro-mechanical magnetic field sensor and a preparation method thereof and belongs to the field of micro-electro-mechanical systems. The method comprises the following steps of: manufacturing metal coils and a pad on a device structure layer; manufacturing a device structure by dry etching; and releasing the device structure to form a harmonic oscillator. The harmonic oscillator of the micro-mechanical magnetic field sensor provided by the invention operates in an extension mode, so induced electromotive force which is generated by each section of metal cutting magnetic induction line on each metal coil can be superposed, and the intensity of an output signal is improved. Moreover, the micro-mechanical magnetic field sensor has the advantages of low power consumption, simple driving/detection circuit, simple process, high industrial value and the like and is slightly influenced by temperature.
Description
Technical field
The present invention relates to a kind of magnetic field sensor, particularly relate to a kind of micromechanics magnetic field sensor and preparation method thereof, belong to design of micromechanics magnetic field sensor and micromachined field.
Background technology
Through responding to magnetic field of the earth identification direction or being ship navigation, particularly in navigation, space flight, robotization control, military affairs and consumer electronics field, the application of magnetic field sensor more and more widely.The magnetic field sensing technology towards miniaturization, low-power consumption, high sensitivity, high resolving power and and the compatible direction of electronic equipment develop.Can be divided into according to the principle of work magnetic field sensor: superconductive quantum interference magnetic field sensor, Hall magnetic field sensor, fluxgate magnetometer, giant magnetoresistance magnetic field sensor and inductive coil magnetic field sensor.
The superconductive quantum interference magnetic field sensor is the highest in all magnetic field sensor medium sensitivities, but its complex structure, bulky, cost an arm and a leg and need be operated under the low temperature environment; The Hall magnetic field sensor is low in energy consumption, size is little, can measure static or dynamic magnetic field, but its sensitivity is low, and noise level and static shift are bigger; The magnetic field that fluxgate magnetometer is used for measure static or slowly changes, resolution is high, power consumption is little, but volume is big, frequency response is lower; The giant magnetoresistance magnetic field sensor is highly sensitive, but the big magnetic field of energy measurement not; The inductive coil magnetic field sensor is based on the magnetic field that Faraday's electromagnetic induction law is surveyed variation, it low in energy consumption, (A.L.Herrera-May simple in structure; L.A.Aguilera-Cort é s, P.J.Garc í a-Ram í rez and E.Manjarrez, " Resonant magnetic field sensors based on MEMS technology "; Sensors, vol.9, no.10; Pp.7785-7813,2009.).Utilize MEMS (Micro Electro Mechanical system; Microelectromechanical systems) the inductive coil magnetic field sensor of fabrication techniques is simple in structure; Be easy to processing; Compatible mutually with CMOS IC (Complementary Metal Oxide Semiconductor Integrated Circuit, complementary mos integrated circuit) technology.The MEMS magnetic field sensor has that volume is little, in light weight, low in energy consumption, cost is low, reliability is high, excellent performance and the incomparable advantage of traditional sensors such as powerful.The development of MEMS technology makes the microstructure on the chip be processed into possibility, has reduced the cost of MEMS simultaneously, but also can accomplish many large scale Mechatronic Systems the task of can not accomplishing, promoted the development of magnetic field sensor like this.
At present; The magnetic field sensor groundwork principle of MEMS structure is: after alive inductive coil receives the Lorentz force of the action of a magnetic field; The structure that causes support coils bends or reverses; Measure the torsional deflection amount or the bending deformation quantity of support coils structure through methods such as capacitance detecting or pressure drag detection, optical detections, just can detect the size of field signal.These devices generally be with inductive coil be produced on semi-girder, U type beam or can be crooked or the flat board that reverses on.During device work, device is placed in the magnetic field, and on inductive coil, feeds electric current.Inductive coil will receive Lorentz force, and Lorentz force can cause the crooked of semi-girder, U type beam or flat board or reverse.Through measuring the size of semi-girder, U type beam or plate bending amount or torsional capacity, just can detect the size in magnetic field.But because these device work all need feed electric current to inductive coil, thereby their power consumption is bigger; These devices are generally operational in mode of flexural vibration or torsion mode in addition, thereby the resonance frequency of their work is lower.
Given this, how to propose a kind of micromechanics magnetic field sensor and preparation method thereof, can make that prepared sensor has that volume is little, simple in structure, low-power consumption, and jamproof characteristics, become the technical matters that this area practitioner needs to be resolved hurrily in fact.
Summary of the invention
The shortcoming of prior art the object of the present invention is to provide a kind of micromechanics magnetic field sensor and preparation method thereof in view of the above, is used for solving that the prior art power consumption is big, the problem of complex structure and poor anti-interference.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides a kind of micromechanics magnetic field sensor and preparation method thereof.
A kind of preparation method of micromechanics magnetic field sensor comprises at least:
1) a SOI substrate is provided;
2) deposition one deck electric insulating medium layer on said SOI substrate top layer silicon is through carrying out patterned and etching technics to keep the electric insulating medium layer in pre-prepared resonance oscillator zone, pre-prepared testing weld pad zone, pre-prepared brace summer zone and pre-prepared anchor point zone respectively to this electric insulating medium layer;
3) preparation one layer or more wire coil on the electric insulating medium layer in the said resonance oscillator of correspondence zone, and form testing weld pad in said testing weld pad zone, form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone;
4) remove the part top layer silicon through photoetching and deep reaction ion etching technology; Form drive electrode, brace summer and anchor point respectively in the said electrode pad of correspondence, brace summer zone and anchor point zone, the said SOI substrate oxygen buried layer that utilizes hydrofluorite to erode below, corresponding said resonance oscillator zone then forms the resonance oscillator to discharge device architecture.
Alternatively, when between the oxygen buried layer of the substrate of SOI described in the step 1) and top layer silicon, offering the cavity in a corresponding said resonance oscillator zone in advance, said step 4) comprises:
Remove the part top layer silicon through photoetching and deep reaction ion etching technology, form drive electrode, brace summer and anchor point respectively, discharge device architecture simultaneously to form the resonance oscillator in the said electrode pad of correspondence, brace summer zone and anchor point zone.
Alternatively, when on the electric insulating medium layer in the said resonance oscillator of correspondence zone, preparing the layer of metal coil, said step 3) also comprises:
Preparing metallic film on the said SOI substrate top layer silicon and on the electric insulating medium layer in corresponding said resonance oscillator zone, through this metallic film being carried out patterned and etching technics to form wire coil respectively in said resonance oscillator zone, form metal pad at the regional formation of said testing weld pad testing weld pad, in the said anchor point of part zone and on the top layer silicon outside the periphery of said resonance oscillator zone, to form electrode pad.
Alternatively, said wire coil is for around said electric insulating medium layer the periphery circle or the square coil in one week, and the beginning of said coil, last two ends are connected to said two testing weld pads through said brace summer.
Alternatively, when on the electric insulating medium layer in the said resonance oscillator of correspondence zone, preparing the layer of metal coil, said step 3) also comprises:
3-1) prepare metallic film on the electric insulating medium layer in said top layer silicon and corresponding said resonance oscillator zone, through this metallic film being carried out patterned and etching technics in said resonance oscillator zone, to form wire coil respectively, form testing weld pad in said testing weld pad zone, to form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone;
3-2) deposit one deck electric insulating medium layer once more, and it is carried out photoetching and etching to expose the two ends at the whole story of said wire coil;
3-3) deposition second layer metal film, and it is carried out photoetching and etching forming metal lead wire, and the top of said metal lead wire is connected with said ground floor wire coil top, and its end is connected to testing weld pad through brace summer.
Alternatively; Said wire coil for by its corresponding said electric insulating medium layer center be top from inside to outside around the spiral metal coil; Its end is connected to said testing weld pad through said brace summer, and said spiral metal coil is round spiral or square spiral shape; Further alternatively, said metal lead wire is straight line, curve or broken line.
Alternatively, during the multiple layer metal coil, said step 3) also comprises on the electric insulating medium layer in the said resonance oscillator of correspondence zone:
3-1) on the electric insulating medium layer in the said resonance oscillator of correspondence zone, prepare metallic film, through this metallic film being carried out patterned and etching technics in said resonance oscillator zone, to form wire coil;
3-2) deposit one deck electric insulating medium layer once more, and it is carried out photoetching and etching to expose the two ends at the whole story of said wire coil;
Order repeated execution of steps 3-1), and 3-2) technology, the series connection of preparing the multiple layer metal coil; And when the said wire coil of the last one deck of preparation, form testing weld pad respectively in said testing weld pad zone, form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone through photoetching and etching technics.
Alternatively; Said wire coil for by its corresponding said electric insulating medium layer center be top from inside to outside around the spiral metal coil; Its end is connected to said testing weld pad through said brace summer, and said spiral metal coil is round spiral or square spiral shape.Further alternatively; The series system of affiliated multiple layer metal coil is that continuous odd number links to each other through top with the said wire coil of even number; Continuous even number links to each other through end with the said wire coil of odd number, and respectively this wire coil have identical around to and shape.
Alternatively, an end of said brace summer connects said resonance oscillator, and the other end connects said anchor point, with fixing said resonance oscillator; Said testing weld pad is positioned on the anchor point with said electric insulating medium layer; Said metal pad is positioned on the anchor point with said electric insulating medium layer.
Alternatively, the material of said wire coil or metal lead wire is gold or aluminium; Except that the junction, has the electric insulating medium layer between the said multiple layer metal coil.
Another object of the present invention provides a kind of micromechanics magnetic field sensor, it is characterized in that, comprises at least:
The SOI substrate has the groove of a degree of depth until its oxygen buried layer; At least one anchor point is positioned at the avris of said groove; The resonance oscillator is formed by the top layer silicon of said SOI substrate, and is suspended in the said groove; Brace summer, one of which end connect said resonance oscillator, and the other end connects said anchor point, are suspended in the said groove to support said resonance oscillator; Wire coil is formed on the said resonance oscillator; Two testing weld pads are formed on the said anchor point, connect the beginning of said wire coil, last two ends respectively, and this testing weld pad mutually insulated respectively; A plurality of metal pads are formed on the said anchor point of part, are used for applying a set potential to said resonance oscillator; Drive electrode is positioned on the top layer silicon in the said resonance oscillator periphery outside, is used to drive said resonance oscillator vibration.
Alternatively, has insulating medium layer between said wire coil and the said resonance oscillator; The material of said wire coil is gold or aluminium; Said wire coil is for around said resonance oscillator the periphery circle or the square metal coil in one week, and the beginning of said wire coil, terminally connects two said testing weld pads respectively through said brace summer.
Alternatively, said wire coil for by said resonance oscillator center be top from inside to outside around the spiral metal coil, its beginning, terminal be connected to said testing weld pad through said brace summer, said spiral metal coil is round spiral or square spiral shape.
Alternatively; Said wire coil nationality is composed in series by a plurality of said spiral metal coils each other; And respectively this spiral metal coil have identical around to; The mode of said spiral metal coil series connection is that the top of continuous odd number and the said spiral metal coil of even number links to each other and continuous even number and the end of the said spiral metal coil of odd number link to each other, and respectively should except connecting place, have the electric insulating medium layer between mutual spiral metal coil of connecting.
Alternatively, said groove is square groove, circular trough or ring groove, and to shape that should groove, said resonance oscillator is square structure, circular configuration or loop configuration.
As stated, a kind of micromechanics magnetic field sensor of the present invention and preparation method thereof has following beneficial effect:
The micromechanics magnetic field sensor that the present invention proposes utilizes static driven excitation resonance oscillator to get into resonant condition; Wire coil is positioned on the resonance oscillator; When sensor is arranged in magnetic field; Can drive the wire coil motion during resonance oscillator vibration, the wire coil cutting magnetic induction line produces induction electromotive force at the coil two ends; Simultaneously, the resonance oscillator of the micromechanics magnetic field sensor that the present invention proposes is operated in expansion mode, thereby every segment Metal Cutting magnetic induction line produces induction electromotive force meeting mutual superposition on the wire coil, has strengthened the intensity of output signal.
Micromechanics magnetic field sensor of the present invention utilizes the work of static driven device; Need on wire coil, not feed electric current; Reduced the power consumption of device, measured the magnetic field size through the induction electromotive force of measuring the wire coil two ends, driving-testing circuit is simple and temperature influence is little; On preparation technology, need on device, not grow perhaps deposits magnetic material, has reduced the complexity of technology; The wire coil of the preparation of the present invention simultaneously can be one or more layers spiral coil, helps further increasing the intensity of output signal, improves the accuracy that detects.
Description of drawings
Fig. 1 a-1i is shown as and prepares the resonance oscillator artwork with square metal coil among the present invention, and wherein Fig. 1 d is the sectional view along the AB direction of Fig. 1 c, and Fig. 1 g is the sectional view along the CD direction of Fig. 1 f.
Fig. 2 a-2b is shown as the resonance oscillator artwork with square metal coil on the SOI substrate that is prepared in a preset cavity among the present invention.
Fig. 3 a-3k is shown as the resonance oscillator artwork that preparation has the helical metal coil, and wherein Fig. 3 d is the sectional view along the AB aspect of Fig. 3 c, and Fig. 3 i is the sectional view along the CD direction of Fig. 3 h, and Fig. 3 j is the sectional view along the AB direction of Fig. 3 h.
Fig. 3 l is shown as the sectional view of Fig. 3 k.
Fig. 4 a-4b is shown as the resonance oscillator artwork with spiral metal coil on the SOI substrate that is prepared in a preset cavity among the present invention.
Fig. 5 is shown as the resonance oscillator sectional view with two-layer helical metal coil for preparing among the present invention.
Fig. 6 a-6b is shown as the resonance oscillator sectional view with two-layer helical metal coil on the SOI substrate that is prepared in a preset cavity among the present invention.
Fig. 7 a-7c is shown as the resonance surface of oscillator figure with square metal coil for preparing among the present invention and the sectional view of two kinds of square grooves.
Fig. 8 is shown as the resonance surface of oscillator figure with helical metal coil for preparing among the present invention.
Fig. 9 is shown as the resonance oscillator sectional view with two-layer helical metal coil for preparing among the present invention.
The element numbers explanation
1 SOI substrate
10 substrate silicon
11 oxygen buried layers
12 top layer silicon
2 cavitys
3 electric insulating medium layers
30 oscillator zones all
31 testing weld pads zone
310 testing weld pads
311 metal pads
32 brace summers zone
320 brace summers
33 anchor points zone
330 anchor points
4 metallic films
40 wire coils
400 tops
401 ends
41 metal lead wires
5 electrode pads
50 drive electrodes
6 oscillators all
7 grooves
Embodiment
Below through specific instantiation embodiment of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this instructions disclosed.The present invention can also implement or use through other different embodiment, and each item details in this instructions also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 a to Fig. 1 i, Fig. 2 a to Fig. 2 b, Fig. 3 a to Fig. 3 k, Fig. 4 a to Fig. 4 b, Fig. 5, Fig. 6 a to Fig. 6 b, Fig. 7 a to 7c and Fig. 8 to Fig. 9.Need to prove; The diagram that is provided in the present embodiment is only explained basic conception of the present invention in a schematic way; Satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and plotted when implementing according to reality; Kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also maybe be more complicated.
Further specify a kind of micromechanics magnetic field sensor provided by the invention and preparation method thereof below in conjunction with Figure of description, proportionally do not draw, state clearly hereby for the accompanying drawing that makes things convenient for that illustrates.
Embodiment one
Shown in Fig. 1 a to Fig. 1 i, the present invention provides a kind of preparation method of micromechanics magnetic field sensor, may further comprise the steps:
Step 1: shown in Fig. 1 a, a SOI substrate 1 is provided, comprises substrate silicon 10, oxygen buried layer 11 and top layer silicon 12.
Step 2: shown in Fig. 1 b to Fig. 1 d; 12 heat growths or LPCVD deposition one deck electric insulating medium layer 3 on said SOI substrate 1 top layer silicon; Through this electric insulating medium layer 3 being carried out patterned and etching technics to keep the electric insulating medium layer 3 in corresponding said resonance oscillator zone 30, pre-prepared testing weld pad zone 31, pre-prepared brace summer zone 32 and pre-prepared anchor point zone 33; Wherein Fig. 1 c is the technology planimetric map that forms in this step, and Fig. 1 d is the sectional view along the AB direction of Fig. 1 c.
Particularly, the number in said brace summer zone 32 is respectively 1～4, is preferably 4 in the present embodiment, and the number that wherein keeps the said brace summer district 32 of said electric insulating medium layer 3 is respectively 1～2, is preferably 2 in the present embodiment; The number in corresponding anchor zone 33 also is respectively 1～4, is preferably 4 in the present embodiment.
Particularly; Said testing weld pad zone 31 has two; And respectively this testing weld pad zone 31 can lay respectively on two said anchor point zones 33 with electric insulating medium layer 3; Also can be positioned on the same said anchor point zone 33 with electrical isolation dielectric layer 3, be preferably said testing weld pad zone 31 in the present embodiment and be positioned at two adjacent said anchor points zones 33; Said brace summer district 32 1 ends and said resonance oscillator zone 30 join, and the other end and said anchor point zone 33 join; Corresponding to said said anchor point zone 33, also has electric insulating medium layer 3 on the said brace summer zone 32 with electrical isolation dielectric layer 3.
Step 3: shown in Fig. 1 e to Fig. 1 g; Utilizing sputter or evaporation technology to prepare layer of metal film 4 on said SOI substrate 1 top layer silicon 12 and on the electric insulating medium layer 3 in corresponding said resonance oscillator zone 30; The material of said metallic film 4 can be aluminium or gold; But be not limited to this; Through this metallic film 4 being carried out patterned and etching technics on the electric insulating medium layer 3 in said resonance oscillator zone 30, to form wire coil 40, said wire coil 40 is around the circle or the square metal coil 40 in electric insulating medium layer one week of 3 peripheries in said resonance oscillator zone 30, is preferably square metal coil 40 in the present embodiment then; Form testing weld pad 310, metal pad 311 and electrode pad 5 respectively on the top layer silicon 12 outside correspondence has the said testing weld pad zone 31 of said electric insulating medium layer 3, the anchor point zone that does not have said electric insulating medium layer 3 and said resonance oscillator zone 30 peripheries then; Wherein Fig. 1 f is the technology planimetric map that forms in this step, and Fig. 1 g is the sectional view along the CD direction of Fig. 1 f.
Step 4: shown in Fig. 1 h to Fig. 1 i; Remove part top layer silicon 12 through photoetching and deep reaction ion etching technology; Form drive electrode 50, brace summer 320 and anchor point 330 respectively in the said electrode pad of correspondence 5, brace summer zone 32 and anchor point zone 33, the said SOI substrate oxygen buried layer 11 that utilizes hydrofluorite to erode 30 belows, corresponding said resonance oscillator zone then forms resonance oscillator 6 to discharge device architecture.Said drive electrode 50 is used for driving said resonance oscillator 6 vibrations; One end of said brace summer 320 connects resonance oscillator 6, and the other end is fixed on said anchor point 330, so that said resonance oscillator 6 unsettled said substrate silicon 10 tops of being fixed in; Square, circular or annular that the shape of said resonance oscillator 6 is respectively is preferably square in the present embodiment.
Particularly, said wire coil 4 is positioned on the said resonance oscillator 6, and and said resonance oscillator 6 between have electric insulating medium layer 3, said wire coil 4 peripheries are positioned at the edge near said resonance oscillator 6, so that obtain bigger amplitude during resonance oscillator 6 vibration.
The two ends of said wire coil 4 are connected to two said testing weld pads 310 through the said brace summer 320 with electric insulating medium layer 3; And two testing weld pads 310 can be positioned at a said anchor point 330 simultaneously or lay respectively at two said anchor points 330; In the present embodiment; Be preferably two testing weld pads 310 and lay respectively on adjacent two said anchor points 330, said metal pad 311 is positioned on other two anchor points 330, to be used for applying a set potential to said resonance oscillator 6.
Particularly, the number in corresponding said brace summer district 32, the number of this brace summer 320 is respectively 1～4, is preferably 4 in the present embodiment; The number in corresponding said anchor point zone 33, the number of this anchor point 330 is respectively 1～4, is preferably 4 in the present embodiment; To number that should electrode pad 5, the number of said drive electrode 50 is respectively 1～4, is preferably 4 in the present embodiment.
When being operated in expansion mode with the micro mechanical sensor of the method for present embodiment preparation, every bit is all expanded simultaneously or is shunk along with the time on the resonance oscillator.For these phantom attitude resonators, its resonance frequency is than higher, so the time dependent ratio of every bit displacement is very fast on the resonance oscillator.If on the resonance oscillator of this resonator, make wire coil, when square plate resonator or circular slab resonator works during in expansion mode, wire coil can move along with the resonance oscillator so.When this device was in the magnetic field, wire coil will the cutting magnetic field line, thereby produced induction electromotive force at the coil two ends.Through detecting the size of wire coil two ends induction electromotive force, just can calculate the size of magnetic field intensity.Because the resonance oscillator of the micromechanics magnetic field sensor that the present invention proposes is operated in expansion mode, thereby every segment Metal Cutting magnetic induction line produces induction electromotive force meeting mutual superposition on the wire coil, has strengthened the intensity of output signal.
In addition; Micromechanics magnetic field sensor of the present invention utilizes the work of static driven device, need on wire coil, not feed electric current, has reduced the power consumption of device; Induction electromotive force through measuring the wire coil two ends is measured the magnetic field size, and driving-testing circuit is simple and temperature influence is little; On preparation technology, need on device, not grow perhaps deposits magnetic material, has reduced the complexity of technology; Further, the wire coil of the present invention's preparation can be one or more layers spiral coil, helps further increasing the intensity of output signal, improves the accuracy that detects.
Embodiment two
Shown in Fig. 2 a; One SOI substrate is provided; Between the top layer silicon 12 of said SOI substrate 1 and oxygen buried layer 11, offer a cavity 2 in advance, the common process that the formation technology of said cavity 2 is well known to those skilled in the art: at first on substrate silicon 10, carry out graphical photoetching, etch the groove (not shown) that is deep to oxygen buried layer according to litho pattern then; Said groove is square groove, circular trough or ring groove, is preferably square groove in the present embodiment.Heat growth one deck monox is as oxygen buried layer 11 on said bottom portion of groove and perimeter side walls then, and bonding one deck silicon is as top layer silicon 12 on said groove one side having at last, and the cavity between said top layer silicon 12 and the said oxygen buried layer 11 is described cavity 2.
The technology of fabricate devices and the key distinction of embodiment one are on the SOI substrate 1 of a said preset cavity 2: when making device architecture in the present embodiment; Also resonance oscillator 6 structures are discharged, this moment, said resonance oscillator 6 was suspended on oxygen buried layer 11 tops; And embodiment one is after having made device architecture; Said resonance oscillator 6 structures are not released; Therefore need utilize HF to erode the method for said resonance oscillator zone 30 below SOI substrate 1 buried regions monox 11; Resonance oscillator 6 structures are discharged, and corresponding steps is identical among other processing step and the embodiment four.Present embodiment resulting devices structure is shown in Fig. 2 b, and other process structure figure and embodiment one roughly the same repeat no more at this.
Embodiment three
As shown in the figure, the present invention provides a kind of preparation method of micromechanics magnetic field sensor, may further comprise the steps:
Step 1: shown in Fig. 3 a, a SOI substrate 1 is provided, comprises substrate silicon 10, oxygen buried layer 11 and top layer silicon 12.
Step 2: shown in Fig. 3 b to Fig. 3 d; 12 heat growths or LPCVD deposition one deck electric insulating medium layer 3 on said SOI substrate 1 top layer silicon; Through this electric insulating medium layer 3 being carried out patterned and etching technics to keep the electric insulating medium layer 3 in corresponding said pre-prepared resonance oscillator zone 30, pre-prepared testing weld pad zone 31, pre-prepared brace summer zone 32 and pre-prepared anchor point zone 33; Wherein Fig. 3 c is a formed process structure planimetric map in this step, and Fig. 3 d is the sectional view along the AB aspect of Fig. 3 c.
Particularly, the number in said brace summer zone 32 is respectively 1～4, is preferably 4 in the present embodiment, and the said brace summer district 32 that wherein keeps said electric insulating medium layer 3 is respectively 1～2, is preferably 2 in the present embodiment; Corresponding anchor zone 33 also is respectively 1～4, is preferably 4 in the present embodiment.
Particularly; Said testing weld pad zone 31 has two; And respectively this testing weld pad zone 31 can lay respectively on two said anchor point zones 33 with electric insulating medium layer 3; Also can be positioned on the same said anchor point zone 33 with electrical isolation dielectric layer 3, be preferably the said anchor point zone 33 that said testing weld pad zone 31 is positioned at 30 two diagonal angles, said resonance oscillator zone in the present embodiment; Said brace summer district 32 1 ends and said resonance oscillator zone 30 join, and the other end and said anchor point zone 33 join; Corresponding to said said anchor point zone 33, also has electric insulating medium layer 3 on the said brace summer zone 32 with electrical isolation dielectric layer 3.
Step 3: shown in Fig. 3 e to Fig. 3 f; On said SOI substrate 1 top layer silicon 12 with the electric insulating medium layer 3 in corresponding said resonance oscillator zone 30 on sputter or evaporation technology prepare layer of metal film 4; The material of this layer metallic film 4 is gold or aluminium; But be not limited to this two kinds of materials; Then through this metallic film 4 being carried out patterned and etching technics to form wire coil 40 on the electric insulating medium layer 3 in said resonance oscillator zone 30; Said wire coil 40 for by its corresponding said electric insulating medium layer 3 centers be top 400 from inside to outside around spiral metal coil 40, said spiral metal coil 40 is round spiral or square spiral shape, is preferably the square spiral shape in the present embodiment; Then correspondence have said electric insulating medium layer 3 said testing weld pad zone 31, do not have the anchor point zone 33 of said electric insulating medium layer 3 and on the top layer silicon 12 in the 30 peripheries outside, said resonance oscillator zone, forming testing weld pad 310, metal pad 311 and electrode pad 5 respectively;
Particularly, the number of said electrode pad 5 is respectively 1～4, is preferably 4 in the present embodiment; The number of testing weld pad 310 is 2; Said metal pad 311 is positioned on other anchor point zones 33 with said testing weld pad 310, to be used for applying a set potential to said resonance oscillator.
Step 4: shown in Fig. 3 g, utilize LPCVD to deposit one deck electric insulating medium layer 3 once more, and it is carried out photoetching and etching with the beginning 400 that exposes said wire coil 40, last 401 two ends;
Step 5: shown in Fig. 3 h to Fig. 3 j; Deposition second layer metal film 4, the material of this layer metallic film 4 is gold or aluminium, and it is carried out photoetching and etching to form metal lead wire 41; And an end of said metal lead wire 41 is connected with the top 400 of said ground floor wire coil 40; Its other end is connected to testing weld pad 310 through brace summer zone 32, and wherein, (wire coil 40 among the figure is except beginning 400, all being covered by electric insulating medium layer 3 end 401 for formed process structure planimetric map in this step for Fig. 3 h; For making things convenient for diagrammatic sketch; Electric insulating medium layer 3 on the wire coil 40 does not draw), Fig. 3 i is the sectional view along the CD direction of Fig. 3 h, Fig. 3 j is the sectional view along the AB direction of Fig. 3 h.
Particularly, said metal lead wire 41 is straight line, curve or broken line, is preferably straight line in the present embodiment, is used for the top 400 of said wire coil 40 is drawn.
Step 6: shown in Fig. 3 k to Fig. 3 l; Through on said top layer silicon 12, carrying out photoetching and deep reaction ion etching technology; Corresponding said electrode pad 5, brace summer district 32 and anchor point zone 33 form drive electrode 50, brace summer 320 and anchor point 330 respectively; Utilize HF to erode the method for said resonance oscillator zone 30 below SOI substrate 1 buried regions monox 11, resonance oscillator 6 structures are discharged.Said drive electrode 50 is used for driving said resonance oscillator 6 vibrations, and an end of said brace summer 320 connects resonance oscillator 6, and the other end is fixed on said anchor point 330, so that said resonance oscillator 6 unsettled substrate silicon 10 tops of being fixed in.Wherein, (wire coil 40 among the figure is all covered by electric insulating medium layer 3 400, terminal 401 except beginning Fig. 3 k by the floor map that forms final said resonance oscillator 6 structures; For making things convenient for diagrammatic sketch, the electric insulating medium layer 3 on the wire coil 40 that do not draw), Fig. 3 l is the sectional view of Fig. 3 k.
Said square spiral shape wire coil 40 is positioned on the said resonance oscillator 6; And and has electric insulating medium layer 3 between the said resonance oscillator 6; Be used for realizing the electric isolation between resonance oscillator 6 and the wire coil 40; And be distributed in the whole plane of said resonance oscillator 6, so that obtain bigger amplitude during resonance oscillator 6 vibration.。
Number to said brace summer 320 that should brace summer district 32 among the present invention is respectively 1～4; Be preferably 4 in the present embodiment; To should anchor point said anchor point 330 numbers in zone 33 be respectively 1～4; Be preferably 4 in the present embodiment, said drive electrode 50 numbers that should electrode pad 5 are respectively 1～4, be preferably 4 in the present embodiment.
In the micro mechanical sensor with the preparation of the method for present embodiment; The structure that the employing of wire coil is spiral helicine; The size of the induction electromotive force that the intensifier coil cutting magnetic induction line is produced; Simultaneously, when the device of the present invention's preparation was operated in expansion mode, every bit was all expanded simultaneously or is shunk along with the time on the resonance oscillator.For these phantom attitude resonators, its resonance frequency is than higher, so the time dependent ratio of every bit displacement is very fast on the resonance oscillator.If on the resonance oscillator of this resonator, make wire coil, when square plate resonator or circular slab resonator works during in expansion mode, wire coil can move along with the resonance oscillator so.When this device was in the magnetic field, wire coil will cutting magnetic induction line, thereby produced induction electromotive force at the coil two ends, through detecting the size of wire coil two ends induction electromotive force, just can calculate the size of magnetic field intensity.Because the resonance oscillator of the micromechanics magnetic field sensor that the present invention proposes is operated in expansion mode, thereby every segment Metal Cutting magnetic induction line produces induction electromotive force meeting mutual superposition on the wire coil, has strengthened the intensity of output signal.
In addition; Micromechanics magnetic field sensor of the present invention utilizes the work of static driven device, need on wire coil, not feed electric current, has reduced the power consumption of device; Induction electromotive force through measuring the wire coil two ends is measured the magnetic field size, and driving-testing circuit is simple and temperature influence is little; On preparation technology, need on device, not grow perhaps deposits magnetic material, has reduced the complexity of technology; Further, the wire coil of the present invention's preparation can be one or more layers spiral coil, helps further increasing the intensity of output signal, improves the accuracy that detects.
Embodiment four
Shown in Fig. 4 a; One SOI substrate 1 is provided; Between the top layer silicon 12 of said SOI substrate 1 and oxygen buried layer 11, offer a cavity 2 in advance, the common process that the formation technology of said cavity 2 is well known to those skilled in the art: at first on substrate silicon 10, carry out graphical photoetching, etch the groove (not shown) that is deep to oxygen buried layer 11 according to litho pattern then; Said groove is square groove, circular trough or ring groove, is preferably square groove in the present embodiment.Heat growth one deck monox is as oxygen buried layer 11 on said bottom portion of groove and perimeter side walls then, and bonding one deck silicon is as top layer silicon 12 on said groove one side having at last, and the cavity between said top layer silicon 12 and the said oxygen buried layer 11 is described cavity 2.
The technology of fabricate devices and the key distinction of embodiment three are on the SOI substrate 1 of a said preset cavity 2: when making device architecture in the present embodiment; Also device architecture is discharged; And embodiment one has been after having made device architecture, and resonance oscillator 6 structures are not released.Therefore, need utilize HF to erode the method for said resonance oscillator zone 30 below SOI substrate buried regions monox 11, device architecture is discharged, corresponding steps is identical among other processing step and the embodiment four.Present embodiment resulting devices structure is shown in Fig. 4 b.
Embodiment five
The present invention also provides a kind of preparation method of micromechanics magnetic field sensor, according to the preparation technology among the described embodiment one, only need change its said step 3) into wire coil 40 that following steps just can be prepared the multilayer series connection:
3-1) preparation metallic film 4 on the electric insulating medium layer 3 in the said resonance oscillator of correspondence zone 30 is through carrying out patterned and etching technics in said resonance oscillator zone 30, to form wire coil 40 to this metallic film 4;
3-2) deposit one deck electric insulating medium layer 3 once more, and it is carried out photoetching and etching with the beginning that exposes said wire coil 40, last two ends (400,401);
Order repeated execution of steps 3-1), and 3-2) technology, the series connection of preparing multiple layer metal coil 40; And when the said wire coil 40 of the last one deck of preparation, through photoetching and etching technics form testing weld pads 310 in said testing weld pad zone 31, the anchor point zone 33 that do not have a said electric insulating medium layer 3 forms metal pads 311 and on the top layer silicon 12 in the 30 peripheries outside, said resonance oscillator zone, forms electrode pad 5.
Particularly; The top 400 of said wire coil 40 is positioned at the center of said resonance oscillator 6; And said wire coil 40 is to be that the center is from inside to outside around forming spiral metal coil 40 with this top 400; And this wire coil 40 in vertical direction by have identical around to multi-layer helical wire coil 40 be composed in series each other; Respectively these helical metal coil 40 series systems are for linking to each other through the top 400 with continuous odd-level and this spiral metal coil 40 of even level and the end 401 of continuous even level and this spiral metal coil of odd-level is connected to form the multiple layer metal coil 40 of a series connection; Said helical metal coil 40 is round spiral or square spiral shape, is preferably the square spiral shape in the present embodiment, further particularly; Said multiple layer metal coil can be preferably 2 layers for 2 layers or 3 layers or multilayer in the present embodiment.
Other processing step is identical with embodiment one, is not giving unnecessary details in the present embodiment.Present embodiment resulting devices structure is as shown in Figure 5.
Embodiment six
Shown in Fig. 6 a; One SOI substrate 1 is provided; Between the top layer silicon 12 of said SOI substrate 1 and oxygen buried layer 11, offer a cavity 2 in advance, the common process that the formation technology of said cavity 2 is well known to those skilled in the art: at first on substrate silicon 10, carry out graphical photoetching, etch the groove (not shown) that is deep to oxygen buried layer 11 according to litho pattern then; Said groove is square groove, circular trough or ring groove, is preferably square groove in the present embodiment.Heat growth one deck monox is as oxygen buried layer 11 on said bottom portion of groove and perimeter side walls then, and bonding one deck silicon is as top layer silicon 12 on said groove one side having at last, and the cavity between said top layer silicon 12 and the said oxygen buried layer 11 is described cavity 2.
The technology of fabricate devices and the key distinction of embodiment three are on the SOI substrate 1 of a said preset cavity 2: when making device architecture in the present embodiment; Also device architecture is discharged; And embodiment one has been after having made device architecture, and resonance oscillator 6 structures are not released.Therefore, need utilize HF to erode the method for said resonance oscillator zone 30 below SOI substrate buried regions monox 11, device architecture is discharged, corresponding steps is identical among other processing step and the embodiment four.Present embodiment resulting devices structure is shown in Fig. 6 b.
Embodiment seven
As shown in Figure 7, the present invention also provides a kind of micromechanics magnetic field sensor, comprising:
Brace summer 320 1 ends connect said resonance oscillator 6; The other end connects said anchor point 330; Be suspended in the said groove 7 to support said resonance oscillator; The 320 corresponding said anchor points 330 of brace summer described in the present invention can evenly be arranged in said resonance oscillator 6 four angles four brace summers, 320 structures or be positioned at two brace summers, 320 structures of said resonance oscillator 6 diagonal positions or be positioned at two brace summers, 320 structures of said resonance oscillator 6 adjacent two jiaos of positions, be preferably four brace summers, 320 structures in the present embodiment;
Two testing weld pads 310 are formed on the said anchor point 330; And these testing weld pad 310 mutually insulateds respectively; Particularly; Said two testing weld pads 310 can be positioned at same said anchor point 330 or lay respectively at two said anchor points 330, are preferably in the present embodiment to lay respectively at two said anchor points 330; A plurality of metal pads 311 are positioned on the anchor point with said testing weld pad, are used for applying a set potential to said resonance oscillator, have a metal pad 311 in the present embodiment on two other anchor point respectively.
Embodiment eight
As shown in Figure 8, the present invention also provides a kind of micromechanics magnetic field sensor, and this microstructure magnetic field sensor is different with embodiment seven except the structure of wire coil 40, and other parts are all identical, do not giving unnecessary details.Therefore, it is following only to provide the structure of said microstructure magnetic field sensor wire coil 40 in the present embodiment:
Embodiment nine
As shown in Figure 9, the present invention also provides a kind of micromechanics magnetic field sensor, and this microstructure magnetic field sensor is different with embodiment seven except the structure of wire coil 40, and other parts are all identical, do not giving unnecessary details.Therefore, it is following only to provide the structure of said microstructure magnetic field sensor wire coil 40 in the present embodiment:
In sum; The micromechanics magnetic field sensor that the present invention proposes utilizes static driven excitation resonance oscillator to get into resonant condition; Wire coil is positioned on the resonance oscillator, when sensor is arranged in magnetic field, can drive the wire coil motion during resonance oscillator vibration; The wire coil cutting magnetic induction line produces induction electromotive force at the coil two ends; Simultaneously, the resonance oscillator of the micromechanics magnetic field sensor that the present invention proposes is operated in expansion mode, thereby every segment Metal Cutting magnetic induction line produces induction electromotive force meeting mutual superposition on the wire coil, has strengthened the intensity of output signal.
In addition; Micromechanics magnetic field sensor of the present invention utilizes the work of static driven device, need on wire coil, not feed electric current, has reduced the power consumption of device; Induction electromotive force through measuring the wire coil two ends is measured the magnetic field size, and driving-testing circuit is simple and temperature influence is little; On preparation technology, need on device, not grow perhaps deposits magnetic material, has reduced the complexity of technology; The wire coil of the preparation of the present invention simultaneously can be one or more layers spiral coil, helps further increasing the intensity of output signal, improves the accuracy that detects.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (25)
1. the preparation method of a micromechanics magnetic field sensor is characterized in that, comprises at least:
1) a SOI substrate is provided;
2) deposition one deck electric insulating medium layer on said SOI substrate top layer silicon is through carrying out patterned and etching technics to keep the electric insulating medium layer in pre-prepared resonance oscillator zone, pre-prepared testing weld pad zone, pre-prepared brace summer zone and pre-prepared anchor point zone respectively to this electric insulating medium layer;
3) preparation one layer or more wire coil on the electric insulating medium layer in the said resonance oscillator of correspondence zone, and form testing weld pad in said testing weld pad zone, form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone;
4) remove the part top layer silicon through photoetching and deep reaction ion etching technology; Form drive electrode, brace summer and anchor point respectively in the said electrode pad of correspondence, brace summer zone and anchor point zone, the said SOI substrate oxygen buried layer that utilizes hydrofluorite to erode below, corresponding said resonance oscillator zone then forms the resonance oscillator to discharge device architecture.
2. the preparation method of micromechanics magnetic field sensor according to claim 1 is characterized in that, when between the oxygen buried layer of the substrate of SOI described in the step 1) and top layer silicon, offering the cavity in a corresponding said resonance oscillator zone in advance, said step 4) comprises:
Remove the part top layer silicon through photoetching and deep reaction ion etching technology, form drive electrode, brace summer and anchor point respectively, discharge device architecture simultaneously to form the resonance oscillator in the said electrode pad of correspondence, brace summer zone and anchor point zone.
3. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that, when on the electric insulating medium layer in the said resonance oscillator of correspondence zone, preparing the layer of metal coil, said step 3) also comprises:
Preparing metallic film on the said SOI substrate top layer silicon and on the electric insulating medium layer in corresponding said resonance oscillator zone, through this metallic film being carried out patterned and etching technics to form wire coil respectively in said resonance oscillator zone, form metal pad at the regional formation of said testing weld pad testing weld pad, in the said anchor point of part zone and on the top layer silicon outside the periphery of said resonance oscillator zone, to form electrode pad.
4. the preparation method of micromechanics magnetic field sensor according to claim 3; It is characterized in that: said wire coil is for around said electric insulating medium layer the periphery circle or the square coil in one week, and the beginning of said coil, last two ends are connected to said two testing weld pads through said brace summer.
5. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that, when on the electric insulating medium layer in the said resonance oscillator of correspondence zone, preparing the layer of metal coil, said step 3) also comprises:
3-1) prepare metallic film on the electric insulating medium layer in said top layer silicon and corresponding said resonance oscillator zone, through this metallic film being carried out patterned and etching technics in said resonance oscillator zone, to form wire coil respectively, form testing weld pad in said testing weld pad zone, to form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone;
3-2) deposit one deck electric insulating medium layer once more, and it is carried out photoetching and etching to expose the two ends at the whole story of said wire coil;
3-3) deposition second layer metal film, and it is carried out photoetching and etching forming metal lead wire, and the top of said metal lead wire is connected with said ground floor wire coil top, and its end is connected to testing weld pad through brace summer.
6. the preparation method of micromechanics magnetic field sensor according to claim 5; It is characterized in that: said wire coil for by its corresponding said electric insulating medium layer center be top from inside to outside around the spiral metal coil, its end is connected to said testing weld pad through said brace summer.
7. micromechanics magnetic field sensor according to claim 6 is characterized in that: said spiral metal coil is round spiral or square spiral shape.
8. the preparation method of micromechanics magnetic field sensor according to claim 5 is characterized in that: said metal lead wire is straight line, curve or broken line, and the material of said metal lead wire is gold or aluminium.
9. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that, during the multiple layer metal coil, said step 3) also comprises on the electric insulating medium layer in the said resonance oscillator of correspondence zone:
3-1) on the electric insulating medium layer in the said resonance oscillator of correspondence zone, prepare metallic film, through this metallic film being carried out patterned and etching technics in said resonance oscillator zone, to form wire coil;
3-2) deposit one deck electric insulating medium layer once more, and it is carried out photoetching and etching to expose the two ends at the whole story of said wire coil;
Order repeated execution of steps 3-1), and 3-2) technology, the series connection of preparing the multiple layer metal coil; And when the said wire coil of the last one deck of preparation, form testing weld pad respectively in said testing weld pad zone, form metal pad and on the top layer silicon in the periphery outside, said resonance oscillator zone, form electrode pad in the said anchor point of part zone through photoetching and etching technics.
10. the preparation method of micromechanics magnetic field sensor according to claim 9; It is characterized in that: said wire coil for by its corresponding said electric insulating medium layer center be top from inside to outside around the spiral metal coil, its end is connected to said testing weld pad through said brace summer.
11. micromechanics magnetic field sensor according to claim 10 is characterized in that: said spiral metal coil is round spiral or square spiral shape.
12. the preparation method of micromechanics magnetic field sensor according to claim 9; It is characterized in that: the series system of affiliated multiple layer metal coil is that continuous odd number links to each other through top with the said wire coil of even number; Continuous even number links to each other through end with the said wire coil of odd number, and respectively this wire coil have identical around to and shape.
13. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that: an end of said brace summer connects said resonance oscillator, and the other end connects said anchor point, with fixing said resonance oscillator.
14. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that: said testing weld pad is positioned on the anchor point with said electric insulating medium layer, and said metal pad is positioned on the anchor point with said electric insulating medium layer.
15. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that: the material of said wire coil is gold or aluminium.
16. the preparation method of micromechanics magnetic field sensor according to claim 1 and 2 is characterized in that: except that the junction, have the electric insulating medium layer between the said multiple layer metal coil.
17. a micromechanics magnetic field sensor is characterized in that, comprises at least:
The SOI substrate has the groove of a degree of depth until its oxygen buried layer;
At least one anchor point is positioned at the avris of said groove;
The resonance oscillator is formed by the top layer silicon of said SOI substrate, and is suspended in the said groove;
Brace summer, one of which end connect said resonance oscillator, and the other end connects said anchor point, to support said resonance oscillator
Be suspended in the said groove;
Wire coil is formed on the said resonance oscillator;
Two testing weld pads are formed on the said anchor point, connect the beginning of said wire coil, last two ends respectively, and this testing weld pad mutually insulated respectively;
A plurality of metal pads are formed on the said anchor point of part, are used for applying a set potential to said resonance oscillator;
Drive electrode is positioned on the top layer silicon in the said resonance oscillator periphery outside, is used to drive said resonance oscillator vibration.
18. micromechanics magnetic field sensor according to claim 17 is characterized in that: have insulating medium layer between said wire coil and the said resonance oscillator.
19. micromechanics magnetic field sensor according to claim 17 is characterized in that: the material of said wire coil is gold or aluminium.
20. micromechanics magnetic field sensor according to claim 17; It is characterized in that: said wire coil is for around said resonance oscillator the periphery circle or the square metal coil in one week, and the beginning of said wire coil, terminally connects two said testing weld pads respectively through said brace summer.
21. micromechanics magnetic field sensor according to claim 17; It is characterized in that: said wire coil for by said resonance oscillator center be top from inside to outside around the spiral metal coil, its beginning, terminal be connected to said testing weld pad through said brace summer.
22. micromechanics magnetic field sensor according to claim 21 is characterized in that: said spiral metal coil is round spiral or square spiral shape.
23. micromechanics magnetic field sensor according to claim 21 is characterized in that: said wire coil nationality is composed in series by a plurality of said spiral metal coils each other, and respectively this spiral metal coil have identical around to.
24. micromechanics magnetic field sensor according to claim 23; It is characterized in that: the mode of said spiral metal coil series connection is that the top of continuous odd number and the said spiral metal coil of even number links to each other and continuous even number and the end of the said spiral metal coil of odd number link to each other, and respectively should except connecting place, have the electric insulating medium layer between mutual spiral metal coil of connecting.
25. micromechanics magnetic field sensor according to claim 17 is characterized in that: said groove is square groove, circular trough or ring groove, and to shape that should groove, said resonance oscillator is square structure, circular configuration or loop configuration.
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| CN201210134030.2A CN102680917B (en) | 2012-04-28 | 2012-04-28 | Micro-mechanical magnetic field sensor and preparation method thereof |
| PCT/CN2013/071251 WO2013159584A1 (en) | 2012-04-28 | 2013-02-01 | Micro-mechanical magnetic field sensor and preparation method thereof |
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