CN104748748B

CN104748748B - Have the microelectromechanicdevices devices at PN interfaces

Info

Publication number: CN104748748B
Application number: CN201310756460.2A
Authority: CN
Inventors: 苏中源; 郭秦辅; 陈志远; 黄肇达
Original assignee: Industrial Technology Research Institute ITRI
Current assignee: Industrial Technology Research Institute ITRI
Priority date: 2013-12-31
Filing date: 2013-12-31
Publication date: 2018-03-06
Anticipated expiration: 2033-12-31
Also published as: CN104748748A

Abstract

The present invention discloses a kind of microelectromechanicdevices devices at tool PN interfaces.Such a microelectromechanicdevices devices include movable mass, conductive layer and electrode.Movable mass includes p type semiconductor layer and n type semiconductor layer.PN interfaces are formed at the joint face of p type semiconductor layer and n type semiconductor layer.When alternating current passes through conductive layer, this microelectromechanicdevices devices can avoid the voltage signal of output abnormality.This microelectromechanicdevices devices is applied to sensing acceleration and magnetic force or a kind of micro electromechanical scanning mirror.

Description

Have the microelectromechanicdevices devices at PN interfaces

Technical field

There is PN interfaces (PN- the invention relates to a kind of microelectromechanicdevices devices, and in particular to one kind Junction microelectromechanicdevices devices).

Prior art

It is indebted in recent years under the drives of related electronic products such as Smartphone, tablet personal computer, somatic sensation television game machine so that Microcomputer sensing and measuring element, such as accelerometer sense meter etc. with magnetic force, and its market demand is presented significantly grows up year by year, because This, international big factory all puts into substantial amounts of resources for research, to develop the micro electronmechanical sensor of high-performance and low-cost.Microcomputer inductance at present It is the micro electro mechanical inertia sensor and worldwide navigation positioning system by energy supplier to information to survey the newest market trend of device （Global Positioning System,GPS）With reference to, with applied to can automatic turning electronic map Smartphone or The automobile navigation apparatus not limited by landform and weather.In addition, the technology of the micro electro mechanical inertia sensor of international big factory each at present Research tendency is to be how to be incorporated into accelerometer on same sensor (also with that can provide the magnetic force sensing meter of direction information I.e. share mass multiaxis detection technology), to reduce the volume of sensor, in response to existing various electronic products it is lightening become Gesture.In addition, while different sensors are integrated, also need to make the measurement signal of each axle not interfere with each other, to improve measuring signal The degree of accuracy, it has also become develop one of important technology key of micro electro mechanical inertia sensor of new generation.

Fig. 1 is the rough schematic view of the micro electronmechanical magnetometer of known Y-axis.Fig. 2 is the simplification of known Z axis Micro-electro-mechanaccelerometer accelerometer Schematic diagram.Fig. 1 is refer to, the micro electronmechanical magnetometer 10 of traditional Y-axis can be reduced to by rotating beam 12 and 11 groups of movable mass Into.The micro electronmechanical magnetometer 10 of Y-axis includes movable mass 11, rotating beam 12, induction coil 13, induction electrode 14 and substrate 15.Movable mass 11 is suspended in substrate 15 and the top of induction electrode 14 by rotating beam 12.Movable mass 11 is suitable to around rotation Turn the axis that beam 12 is linked to be to be rotated.In the operating condition, alternating current is inputted to induction coil 13, this power frequency It is consistent with the natural frequency of movable mass 11.In the presence of having magnetic field B when the external world, induction coil 13 and magnetic field B can will produce labor Lun Zili F（Lorentz Force）, this power F by promote movable mass 11 make its produce vibration.Produced Lorentz force F's Big I is learnt by following formula：

Wherein I is size of current, and L is the vector length vertical with magnetic field B directions of induction coil 13, and B is extraneous magnetic field Size.Then, the change of electric capacity between movable mass 11 and induction electrode 14 is detected by induction electrode 14, to calculate magnetic force Size.Because induction coil 13 is electrically coupled to AC power, therefore its sense of current and the positive and negative size of voltage are all with phase Make periodically-varied.When the alternating voltage of input is positive voltage, electric current is electrically coupled to AC power by induction coil 13 One end flows into, and then passes through the induction coil 13 on movable mass 11, then flow to the electrical connection earth terminal of induction coil 13 The GND other end.Potential difference between the induction coil 13 and substrate 15 of movable mass 11, can produce positive charge and accumulate on The lower surface of movable mass 11, and negative electrical charge is accumulated on the induction electrode 14 of substrate 15.With alternating voltage rising with Decline, accumulate on the lower surface of movable mass 11 and also increase and decrease therewith with the electric charge number on induction electrode 14.When voltage-phase changes During change (when phase angle is 180 °), alternating voltage is changed into negative voltage, and the direction of alternating current becomes to be electrical by induction coil 13 The one end for linking earth terminal GND flows to the other end that induction coil 13 is electrically coupled to AC power.Due to changing for alternating voltage Become, the current potential of the lower surface of movable mass 11 is less than substrate 15, thus cause accumulation of positive charges in the induction electrode of substrate 15 On 14, negative electrical charge accumulates on the lower surface of movable mass 11.In the moment of the positive and negative conversion of alternating voltage, under movable mass 11 Charged particles quantity on the induction electrode 14 with substrate 15 on surface is reduced,.Thus electric current is produced on induction electrode 14.This Induced-current can cause the change of the voltage signal of reading circuit output, and then the micro electronmechanical sensing of magnetometer 10 of Y-axis is made mistake Magnetic force size.

Fig. 2 is refer to, the micro electronmechanical accelerometer 20 of traditional Z axis includes movable mass 21, torsion beam 22,23 fixed seats (not shown) and induction electrode 24.The center line of movable mass 21 is deviateed in the position of rotating beam 22, and movable mass 21 can The axis being linked to be around rotating beam 22 and fixed seat 23 rotates.When accelerometer produces acceleration A z in Z axis, movable mass 21 can be using the axis that torsion beam 22,23 and fixed seat are linked to be as rotary shaft（Y-axis）, produce the rotation of similar seesaw.Then, By detecting because the electric capacity between movable mass 21 and induction electrode 24 changes, you can calculate acceleration in the Z-axis direction Size.

If however, it is intended to when combining above-mentioned magnetic force size and the function of acceleration detecting on same structure body, magnetic force sensing The sensing signal of signal and acceleration can produce coupling phenomenon.In other words, when the induction electrode on substrate is being detected due to Y-axis magnetic When capacitance caused by power changes, the capacitance caused by Z axis acceleration is also detected simultaneously and is changed, this will cause magnetic Power sensing signal is mutually coupled with acceleration sensing signal.In other words, same measurement signal includes magnetic force and amount of acceleration simultaneously Survey signal, it is necessary to it is further that signal is decoupling to obtain the semaphore measured value of difference, thus increase the complexity of processing of circuit.

On the other hand, one kind that Fig. 3 A are US patent number US2004/0158439 can measure magnetic field and acceleration simultaneously Common structure sensor.Fig. 3 B are the schematic cross-section along A-A ' lines of the common structure sensors of Fig. 3 A.It refer to Fig. 3 A and 3B.Fig. 3 A's Structure sensor includes first and second movable structure 31,32 altogether.First and second movable structure 31,32 respectively include spring 31a, 32a supporting mass 31b, 32b respectively.Wherein first and second movable structure 31,32 is arranged in X-Y and put down parallel to each other On face.Then the electric current of different directions is given on two pieces of masses 31a, 32b.When in identical magnetic field（Such as in the X direction Ci Chang ﹕ Bx）Under, two pieces of masses 31a, 32b can produce in opposite direction but size identical displacement respectively（+b,-b）.When having During acceleration A z, two mass 31b, 32b produce that directions are identical and size identical displacement（-a,-a）.Therefore, when having at the same time In the environment of magnetic field exists with acceleration, mass 31b displacement summation is-a+b, and mass 32b displacement summation is-a-b. The equation that two mass displacements are formed more than calculating, you can obtain magnetic force and the displacement caused by acceleration, Jin Erfen respectively The size of magnetic force and the size of acceleration are not calculated.

The content of the invention

A kind of microelectromechanicdevices devices that the application proposes include substrate, movable mass, the first conductive layer and the first insulation Layer.Substrate includes the electrode for being disposed thereon surface.Movable mass is arranged above electrode and comprising the first P-type semiconductor Layer, the first n type semiconductor layer and the first PN interfaces.Wherein the first n type semiconductor layer the first p type semiconductor layer of connection, and the One PN interfaces are formed at the joint face between the first p type semiconductor layer and the first n type semiconductor layer.In addition, the first insulating barrier is set It is placed between movable mass and the first conductive layer.

Another microelectromechanicdevices devices proposed by the present invention are suitable to detecting magnetic force.This microelectromechanicdevices devices includes substrate, first exhausted Edge layer, the first conductive layer and the first spring.Substrate includes the electrode for being disposed thereon surface.Movable mass is arranged on electrode Top and suitable for rotating about the axis, movable mass includes the first p type semiconductor layer, the first n type semiconductor layer and the first PN Interface.The lower surface of first p type semiconductor layer is towards electrode, the lower surface of the first n type semiconductor layer and the first p type semiconductor layer Upper surface connection, and the first PN interfaces are formed at the joint face of the first p type semiconductor layer and the first n type semiconductor layer.The One insulating barrier is arranged at the upper surface of the first N-type semiconductor, and the first conductive layer is arranged on the first insulating barrier.First spring edge The direction of diameter parallel connects movable mass and including the second p type semiconductor layer, the second n type semiconductor layer and the 2nd PN Interface, wherein the second p type semiconductor layer connects the first p type semiconductor layer, lower surface and the second p-type half of the 2nd N semiconductor layers The upper surface connection of conductor layer, and the 2nd PN interfaces are formed at the connection of the second p type semiconductor layer and the second n type semiconductor layer Face.

Another microelectromechanicdevices devices proposed by the present invention include substrate, framework, the first insulating barrier, the first conductive layer, the One spring and second spring.Substrate includes the electrode for being disposed thereon surface.Framework is arranged on above electrode and suitable for around axle Line rotates.Framework includes the first p type semiconductor layer, the first n type semiconductor layer and the first PN interfaces.Wherein the first p-type is partly led The lower surface of body layer is connected towards electrode, the lower surface of the first n type semiconductor layer with the upper surface of the first p type semiconductor layer, And the first PN interfaces be formed at the joint face of the first p type semiconductor layer and the first n type semiconductor layer.First insulating barrier is arranged at The upper surface of one n type semiconductor layer.First conductive layer is arranged on the first insulating barrier.First spring edge and the direction of diameter parallel Connection framework.Second spring is arranged in framework, and edge and the direction connection framework of diameter parallel, and second spring and the first bullet Spring is located on collinear bearing of trend.

Another microelectromechanicdevices devices proposed by the present invention are suitable to detecting magnetic force and acceleration.This microelectromechanicdevices devices includes base Plate, movable mass, the first insulating barrier, the first conductive layer and control and switch unit.Substrate includes and is arranged on surface Electrode.Movable mass is arranged above electrode and suitable for rotating about the axis, and movable mass includes the first P-type semiconductor Layer, the first n type semiconductor layer and the first PN interfaces.Partly led towards electrode, the first N-type the lower surface of first p type semiconductor layer The lower surface of body layer is connected with the upper surface of the first P-type semiconductor, and the first PN interfaces are formed at the first p type semiconductor layer and The joint face of one n type semiconductor layer.First insulating barrier is arranged at the upper surface of the first n type semiconductor layer.First conductive layer is set In on the first insulating barrier.Control controls the electric current of the first conductive layer to supply with switch unit unit.

Brief description of the drawings

Fig. 1 is the schematic diagram of the micro electronmechanical magnetometer structure of known Y-axis.

Fig. 2 is the schematic diagram of known Z axis Micro-electro-mechanaccelerometer accelerometer structure.

Fig. 3 A are a kind of structural representations of United States Patent (USP) US2004/0158493 microelectromechanicdevices devices.

Fig. 3 B are diagrammatic cross-section of Fig. 3 A microelectromechanicdevices devices structures along A-A ' lines.

Fig. 4 is the schematic diagram of the microelectromechanicdevices devices illustrated according to one embodiment of the invention.

Fig. 5 A are the top views of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention.

Fig. 5 B are diagrammatic cross-section of Fig. 5 A microelectromechanicdevices devices along A-A ' lines.

Fig. 6 A are the top views of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention.

Fig. 6 B are diagrammatic cross-section of Fig. 6 A microelectromechanicdevices devices along B-B ' lines.

Fig. 6 C are diagrammatic cross-section of Fig. 6 A microelectromechanicdevices devices along C-C ' lines.

Fig. 6 D are the circuit system Organization Charts illustrated according to another embodiment of the present invention.

Fig. 6 E are the diagrammatic cross-sections of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention.

Fig. 7 A are the top views of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention.

Fig. 7 B are diagrammatic cross-section of Fig. 7 A microelectromechanicdevices devices along D-D ' lines.

Symbol description

10：The micro electronmechanical magnetometer of Y-axis

11、21、120、220、320：Movable mass

12、22：Rotating beam

13：Conductive coil

14、24：Sensing electrode

15、25、110、210、310：Substrate

20：The micro electronmechanical accelerometer of Z axis

23：Fixed seat

30：Support plate

31：First movable structure

31b：First mass

31a、32a、262：Spring

32：Second movable structure

32b：Second mass

33：Input electrode

34：Electrical ground electrode

35、36：Common electrode

37：First sensing electrode

38：Second sensing electrode

100、200、300、300’、400、500：Microelectromechanicdevices devices

111、211、311：Electrode

130、270、370：First insulating barrier

121、221、321：First p type semiconductor layer

122、222、322：First n type semiconductor layer

123、223、323：First PN interfaces

140、230、330：First conductive layer

140a、230a、330a：First end

140b、230b、330b：Second end

240、340、350、340’、350’：First fixed seat

240a、340a’：First outer fixed seat

240b、340b’：Fixed seat in first

241、341’：First groove

242、342：First conductive pole

250、350：Fixed seat

250a、350a：Outer fixed seat

250b、350b：Interior fixed seat

251、351：Groove

252、342、352：Conductive pole

260、360、365：First spring

280：Insulating barrier

380：Second fixed seat

380a：Second outer fixed seat

380b：Fixed seat in second

381：Second groove

382：Second conductive pole

390、395：Second spring

405：Voltage controlled oscillator

410a、410b：Operational amplifier

410：Control and switch unit

420：Sensor

425：First conductive layer

425a：First end

425b：Second end

430；Control and switch unit

440：First reading circuit

442；First output signal

450：Second reading circuit

452：Second output signal

460：Calculating and compensation processor

510：Specular layer

520：Permanent magnet

2212、3212：Second p type semiconductor layer

2222、3222：Second n type semiconductor layer

2232、3232：2nd PN interfaces

2213、3213：3rd p type semiconductor layer

2223、3223：3rd n type semiconductor layer

2233、3233：3rd PN interfaces

2302、3302：Second conductive layer

2303、3303：3rd conductive layer

2702、3702：Second insulating barrier

2703、3703：3rd insulating barrier

Az：Z axis acceleration

B：Magnetic field

F：Lorentz force

I：Electric current

L：Vector length

Vac：AC power

S1：Bottom surface

S2：Side

SA：Acceleration signal

SB：Magnetic force signal

GND：Earth terminal

Vp：First polarizing voltage

Vn：Second polarizing voltage

Embodiment

The invention discloses a kind of microelectromechanicdevices devices of tool PN interfaces (PN-Junction).Such a microelectromechanicdevices devices include can Kinoplaszm gauge block, conductive layer and electrode.Movable mass includes p type semiconductor layer and n type semiconductor layer.PN interfaces are formed at P The joint face of type semiconductor layer and n type semiconductor layer.When alternating current passes through conductive layer, this microelectromechanicdevices devices can avoid reading Anomalous variation occurs for the voltage of circuit output.This microelectromechanicdevices devices is applied to sensing acceleration and magnetic force or one kind is micro- Electromechanical scanning mirror（MEMS scanning micro-mirror）.

Disclosed herein p type semiconductor layer (P-type semiconductor layer) can be doping (doping) silicon (Si) material layer or germanium (Ge) material of a small amount of p type impurity (impurities) (such as boron, aluminium, gallium, indium etc.) Layer.

Disclosed herein n type semiconductor layer (N-type semiconductor layer) can be doping (doping) a small amount of N-type impurity (impurities) (such as nitrogen, phosphorus, arsenic, antimony, etc.) silicon (Si) material layer or germanium (Ge) material Layer.

Fig. 4 is the schematic diagram that microelectromechanicdevices devices 100 are illustrated according to one embodiment of the invention.It refer to Fig. 4, microcomputer Denso Putting 100 includes:Substrate 110, electrode 111, movable mass 120, the first conductive layer 140 and the first insulating barrier 130.Electrode 111 It is arranged at the upper surface of substrate 110.Movable mass 120 is arranged at the top of electrode 111.First insulating barrier 130 is arranged at movably Between the conductive layer 140 of mass 120 and first, so that movable mass 120 is electrically insulated with the first conductive layer 140.

Movable mass 120 includes：First p type semiconductor layer 121, the first n type semiconductor layer 122 and the first PN interfaces 123.First p type semiconductor layer 121 connects the first n type semiconductor layer 122.First PN interfaces (PN-junction) 123 are formed at The joint face of first p type semiconductor layer 121 and the first n type semiconductor layer 122.

First conductive layer 140 includes first end 140a and the second end 140b.When microelectromechanicdevices devices 100 are in working condition, First end 140a electrical connection earth terminal GND and the second end 140b electric property coupling AC power Vac, led so that electric current flows into first Electric layer 140.In addition, electrode 111 can be with the common electrical connection earth terminal GND of first end 140a.In the present embodiment, is also allowed for One end 140a electric property coupling AC power Vac and allow the second end 140b electrical connection earth terminal GND, electric current is flowed into first conductive Layer 140.Under such a situation, electrode 111 should be with the common electrical connection earth terminal GND of first end 140b.In addition, the first p-type is partly led The first polarizing voltage of electric property coupling (Vp) of body layer 121, the second polarizing voltage of electric property coupling (Vn) of the first n type semiconductor layer 122, and Second polarizing voltage (Vn) is more than or equal to the first polarizing voltage (Vp).Polarizing voltage (the polarization of the present invention Voltage the semiconductor layer or a small amount of that can make the voltage of conductor generation electric charge or make a small amount of p type impurity of doping (doping)) is referred to The semiconductor layer of N-type impurity produces the voltage of electric charge.Now, with the sensing of microelectromechanicdevices devices 100 magnetic field in the environment, will Produce Lorentz force F.This Lorentz force F can be applied on movable mass 120, and then movable mass 120 is produced displacement (translation) or (rotation) is rotated.The displacement or rotation of movable mass 120 can cause the first p type semiconductor layer Electric capacity between 121 and electrode 111 changes.Therefore, microelectromechanicdevices devices 100 can change by the electric capacity sensed, Ran Houtong Spy's integrated circuit (ASIC) calculating is crossed, tries to achieve the size of magnetic force.In addition, during alternating voltage is changed, due to the Two polarizing voltages (Vn) are more than or equal to the first polarizing voltage (Vp), make the first p type semiconductor layer 121 and the first N-type semiconductor There is reverse bias between layer 122, therefore, in the moment of the positive and negative conversion of alternating voltage, the first p type semiconductor layer 121 and base 110 electrode 111 does not have the increase and decrease of charged particles on plate, will not cause the change of the voltage signal of reading circuit output yet. It in this way, when microelectromechanicdevices devices 100 measure magnetic force, can avoid measuring to abnormal sensing signal, the accurate of magnetic force is measured with increase Degree.

In the embodiment that Fig. 4 is illustrated, microelectromechanicdevices devices 100 can carry out the modification of part, to meet different function need Ask.For example, the framework (frame) that movable mass 120, which can be a central part, to be hollowed out, so that the place of hollowing out of framework can be set Put fixed seat.In addition it is possible to use the springs of multiple cantilever beam (cantilever beam) structures connects movable mass 120, so that movable mass 120 produces the displacement in vertical direction (Z axis).Two torsion beam (torsional can also be used Beam) the spring of structure, movable mass 120 is connected along an axis, so that movable mass 120 can axis (two rotations according to this The central line of beam) produce rotary motion.

In the embodiment that Fig. 4 is illustrated, microelectromechanicdevices devices 100 can also carry out different designs, to lift microelectromechanicdevices devices 100 measurement sensitivity.For example, the first conductive layer 140 can be the conduction of single conductive layer or multiple coil (coil) Layer.When the first conductive layer 140 is the conductive layer of multiple coil (coil), electric current can be increased sensing is interacted with magnetic field and is produced Life Lorentz force, movable mass 120 is produced larger displacement or amount of spin, and then increase microelectromechanicdevices devices 100 Measure sensitivity.In addition, two torsion beam (torsional beam) ought be used, when connecting movable mass 120 along an axis, this Movable mass 120 can be divided into the mass of two parts by axis.When this axis to the mass of this two part center of gravity away from From it is unequal when, then movable mass 120 can be made to turn into non-equilibrium mass (unbalanced mass).Can kinoplaszm in this way, working as When gauge block 120 affords Lorentz force, larger amount of spin is had, and then increase the measurement sensitivity of microelectromechanicdevices devices 100.

Fig. 5 A are the top views of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention.Fig. 5 B are the micro electronmechanical of Fig. 5 A Diagrammatic cross-section of the device along A-A ' lines.Fig. 5 A and 5B are refer to, the microelectromechanicdevices devices 200 of the present embodiment are applied to detecting Y-axis The size of magnetic force.Microelectromechanicdevices devices 200 include substrate 210, electrode 211, movable mass 220, the first conductive layer 230, first Insulating barrier 270, the first fixed seat 240 and the first spring 260.First fixed seat 240 and electrode 211 are respectively arranged at substrate 210 Upper surface.First insulating barrier 270 may be disposed between the conductive layer 230 of movable mass 220 and first.In one embodiment, First insulating barrier 270 may be disposed on movable mass 220, and the first conductive layer 230 may be disposed on the first insulating barrier 270, So that movable mass 220 is electrically insulated with the first conductive layer 230.First spring 260 connects the first fixed seat 240 and can kinoplaszm Gauge block 220, movable mass 220 is set to be suspended in the top of electrode 211.In addition, the first conductive layer 230 can be single-turn or multi-turn Conductive coil or form the conductive layer in whole face in the upper surface of movable mass 220.

The movable mass 220 of microelectromechanicdevices devices 200 includes the first p type semiconductor layer 221, the first n type semiconductor layer 222.First n type semiconductor layer 222 connects the first p type semiconductor layer 221 to form the first PN interfaces 223.In other words, the first PN Interface 223 is formed at the joint face between the first p type semiconductor layer 221 and the first n type semiconductor layer 222.In one embodiment, Partly led with the first p-type towards electrode 211, first its lower surface of n type semiconductor layer 222 lower surface of first p type semiconductor layer 221 The upper surface connection of body layer 221.First insulating barrier 270 is arranged at the upper surface of the first n type semiconductor layer 222, the first conductive layer 230 are arranged on the first insulating barrier 270.

First fixed seat 240 of microelectromechanicdevices devices 200 includes the second p type semiconductor layer 2212, the second n type semiconductor layer 2222.Second n type semiconductor layer 2222 connects the second p type semiconductor layer 2212 to form the 2nd PN interfaces 2232.That is, 2nd PN interfaces 2232 are formed at the joint face of the second p type semiconductor layer 2212 and the second n type semiconductor layer 2222.In addition, the Two p type semiconductor layers 2212 are arranged at the bottom surface S1 and side S2 of the second n type semiconductor layer 2222.

First spring 260 of microelectromechanicdevices devices 200 includes the 3rd p type semiconductor layer 2213, the 3rd n type semiconductor layer 2223.3rd n type semiconductor layer 2223 connects the 3rd p type semiconductor layer 2213 to form the 3rd PN interfaces 2233.In other words, Three PN interfaces 2233 are formed at the joint face of the 3rd p type semiconductor layer 2213 and the 3rd n type semiconductor layer 2223.In addition, first Spring 260 additionally comprises the 3rd insulating barrier 2703 and the 3rd conductive layer 2303.3rd insulating barrier 2703 is arranged at the 3rd N-type semiconductor On layer 2223 and the 3rd conductive layer 2303 is arranged on the 3rd insulating barrier 2703, so that the 3rd n type semiconductor layer 2223 and the 3rd Conductive layer 2303 is electrically insulated.

3rd p type semiconductor layer 2213 of the first spring 260 connects the second p type semiconductor layer 2212 and the first spring 260 The 3rd p type semiconductor layer 2213 connection movable mass 220 the first p type semiconductor layer 221, with formed can make the first p-type The conductance channel of the first polarizing voltage of electric property coupling (Vp) of semiconductor layer 221.

In order to increase conductance channel (electrical interconnection), the first fixed seat 240 can separately include the One groove 241.First groove 241 first fixed seat 240 can be separated into first to be mutually electrically insulated fixed seat 240b with First outer fixed seat 240a.Fixed seat 240b includes the second p type semiconductor layer 2212 and the second n type semiconductor layer in first 2222.First outer fixed seat 240a includes the second n type semiconductor layer 2222.Fixed seat 240b the second P-type semiconductor in first Layer 2212 is arranged at the bottom surface S1 and side S2 of the second n type semiconductor layer 2222 of fixed seat 240b in first.

First fixed seat 240 also includes the second insulating barrier 2702, the second conductive layer 2302 and and conductive pole 242.Second Insulating barrier 2702 is arranged in fixed seat 240b in first, the first outer fixed seat 240a and first groove 241.Second conductive layer 2302 are arranged at 2702 on the second insulating barrier.Second insulating barrier 2702 and connection of the conductive pole 242 through the first fixed seat 240a Second conductive layer 2302 of the first fixed seat 240 and the first outer fixed seat 240a.

3rd p type semiconductor layer 2213 of the first spring 260 connects fixed seat in the first p type semiconductor layer 221 and first 240b the second p type semiconductor layer 2212, the first polarizing voltage of electric property coupling of the first p type semiconductor layer 221 can be made to be formed (Vp) conductance channel.

In addition, in order to there is more conductance channels (electrical interconnection) in fixed seat 250, Gu Reservation 250 separately includes groove 251.Groove 251 fixed seat 250 can be separated into the outer fixed seat 250a that is mutually electrically insulated with it is interior Fixed seat 250b.Interior fixed seat 250b is the second n type semiconductor layer 2222.Outer fixed seat 250a is also the second n type semiconductor layer 2222.Fixed seat 250 also includes the second conductive layer 2302, the second insulating barrier 2702 and and conductive pole 252.Second insulating barrier 2702 are arranged on interior fixed seat 250b, outer fixed seat 250a and groove 251.Second conductive layer 2302 is arranged at the second insulation Layer upper 2702.Conductive pole 252 is through the second insulating barrier 2702 of fixed seat 250 and the second conductive layer of connection fixing base 250 2302 and outer fixed seat 250a.

The spring 262 of microelectromechanicdevices devices 200 includes the 3rd n type semiconductor layer 2223, the 3rd insulating barrier 2703 and the 3rd is led Electric layer 2303.3rd insulating barrier 2703 is arranged on the 3rd n type semiconductor layer 2223 and the 3rd conductive layer 2303 is arranged at the 3rd On insulating barrier 2703, the 3rd n type semiconductor layer 2223 is set to be electrically insulated with the 3rd conductive layer 2303.

In addition, the first n type semiconductor layer of the 3rd n type semiconductor layer 2223 connection movable mass 220 of spring 262 221 and interior fixed seat 250b the second n type semiconductor layer 2222, the electric property coupling of the first n type semiconductor layer 221 the can be made to be formed The conductance channel of two polarizing voltages (Vn).

Led to allow current to supply to the first conductive layer 230 on movable mass 220, the 3rd of the first spring 260 Electric layer 2303 connects the second conductive layer 2302 of the first fixed seat 240 and the first end 230a of the first conductive layer 230, can with formation Make first end 230a electrical connection earth terminals GND conductance channel.In addition, the 3rd conductive layer 2303 of spring 262 is connected 250 the second conductive layer 2302 of seat and the second end 230b of the first conductive layer 230, the second end 230b electric property couplings can be made to be formed The conductance channel of AC power.

In one embodiment, microelectromechanicdevices devices 200 can make the first p type semiconductor layer 221 electrical when carrying out magnetic field measurement Couple the first polarizing voltage (Vp) and make the second polarizing voltage of electric property coupling (Vn) of the first n type semiconductor layer 222, wherein the second pole That changes voltage (Vn) is more than or equal to the first polarizing voltage (Vp).In addition, the first end 230a electrical connections of the first conductive layer 230 Earth terminal GND and the first conductive layer 230 the second end 230b electric property coupling AC powers, and due to first end 230a and the second end Potential difference between 230b, and in producing electric current on the first conductive layer 230.In addition, electrode 211 is then common with first end 230a Electrical connection earth terminal GND.

When the environment where microelectromechanicdevices devices 200 has along in the presence of the magnetic field B or magnetic field B of Y direction component, first leads Electric current in electric layer 230 will occur reciprocation with magnetic field B and produce Lorentz force F.This Lorentz force F can be applied to movably On mass 220, and then movable mass 220 is produced using A-A ' axis as rotary shaft and rotate (rotation).Movable quality The rotation of block 220 can cause the electric capacity between the first p type semiconductor layer 221 and electrode 211 to change.Therefore, microelectromechanicdevices devices 200 can change by the electric capacity that senses, then by special integrated circuit (ASIC) calculating, try to achieve magnetic force B size.

In addition, such as above-mentioned embodiment, because the second polarizing voltage (Vn) is more than or equal to the first polarizing voltage (Vp), first The first PN interfaces 223 between the semiconductor layer 222 of p type semiconductor layer 221 and second have reverse bias.Therefore, in alternating current During pressure conversion, the electric charge of the lower surface of the first p type semiconductor layer 221 maintains identical powered electrically.In other words, handing over During flowing voltage conversion, electrode 211 will not produce induced-current, will not also cause the voltage signal of reading circuit output Change.In this way, microelectromechanicdevices devices 200 are thus avoided that abnormal signal is arrived in measurement, and then increase microelectromechanicdevices devices 200 and measure magnetic force The degree of accuracy.

Fig. 6 A are the top views of the microelectromechanicdevices devices illustrated according to another embodiment of the present invention, and Fig. 6 B are the micro electronmechanical of Fig. 6 A Diagrammatic cross-section of the device along B-B ' lines, Fig. 6 C are diagrammatic cross-section of Fig. 6 A microelectromechanicdevices devices along C-C ' lines.It refer to figure 6A, Fig. 6 B and 6C.

Microelectromechanicdevices devices 300 include substrate 310, electrode 311, movable mass 320, the insulation of the first conductive layer 330, first The 370, first fixed seat 340,350 of layer, the second fixed seat 380, the first spring 360,365 and second spring 390,395.

First the 340,350, second fixed seat 380 of fixed seat and electrode 311 are respectively arranged at the upper surface of substrate 310.The One insulating barrier 370 may be disposed between the conductive layer 330 of movable mass 320 and first.In more detail, the first insulating barrier 370 It may be disposed on movable mass 320 and the first conductive layer 330 may be disposed on the first insulating barrier 370, so that movable mass 320 are electrically insulated with the first conductive layer 330.First spring 360,365 connects the first fixed seat 350,340 and movable quality respectively Block 320.Second spring 390,395 is respectively connecting to the second fixed seat 380 and movable mass 320 and makes movable mass 320 It is suspended in the top of electrode 311.In addition, the first conductive layer 330 can be the conductive coil of single-turn or multi-turn or in movable The upper surface of mass 320 forms the conductive layer in whole face.

The movable mass 320 of microelectromechanicdevices devices 300 includes the first p type semiconductor layer 321, the first n type semiconductor layer 322.First n type semiconductor layer 322 connects the first p type semiconductor layer 321 to form the first PN interfaces 323.In other words, the first PN Interface 323 is formed at the joint face between the first p type semiconductor layer 321 and the first n type semiconductor layer 322.For example, first The lower surface of p type semiconductor layer 321 is towards electrode 311, first its lower surface of n type semiconductor layer 322 and the first p type semiconductor layer 321 upper surface connection.In addition, the first insulating barrier 370 is arranged at the upper surface of the first n type semiconductor layer 322, the first conductive layer 330 are arranged on the first insulating barrier 370.

First fixed seat 340 of microelectromechanicdevices devices 300 includes the second p type semiconductor layer 3212, the second n type semiconductor layer 3222.Second n type semiconductor layer 3222 connects the second p type semiconductor layer 3212 to form the 2nd PN interfaces 3232.That is, 2nd PN interfaces 3232 are formed at the joint face of the second p type semiconductor layer 3212 and the second n type semiconductor layer 3222.In addition, the Two p type semiconductor layers 3212 are arranged at the bottom surface S1 and side S2 of the second n type semiconductor layer 3222.

First spring 365 of microelectromechanicdevices devices 300 includes the 3rd p type semiconductor layer 3213, the 3rd n type semiconductor layer 3223.3rd n type semiconductor layer 3223 connects the 3rd p type semiconductor layer 3213 to form the 3rd PN interfaces 3233.In other words, Three PN interfaces 3233 are formed at the joint face of the 3rd p type semiconductor layer 3213 and the 3rd n type semiconductor layer 3223.In addition, first Spring 365 additionally comprises the 3rd insulating barrier 3703 and is arranged on the 3rd n type semiconductor layer 3223.

3rd p type semiconductor layer 3213 of the first spring 365 connects the second p type semiconductor layer of the first fixed seat 340 3212.Second p type semiconductor layer 3212 of the first fixed seat 340 coats the second n type semiconductor layer 3222 of the first fixed seat 340 Whole bottom surface S1.First P-type semiconductor of the 3rd p type semiconductor layer 3213 connection movable mass 320 of the first spring 365 Layer 321, to form the conductance channel of the first polarizing voltage of electric property coupling (Vp) of the first p type semiconductor layer 321.

In order to increase the conductance channel of microelectromechanicdevices devices 300, the first fixed seat 350 can separately include first groove 351.First First fixed seat 350 can be separated into the outer fixed seats of fixed seat 350b and first in first to be mutually electrically insulated by groove 351 350a.Fixed seat 350b includes the second n type semiconductor layer 3222 in first.First outer fixed seat 340a is partly led comprising the second N-type Body layer 3222.

First fixed seat 350 also includes the second insulating barrier 3702, the second conductive layer 3302 and and conductive pole 352.Second Insulating barrier 3702 is arranged in fixed seat 350b in first, the first outer fixed seat 350a and first groove 351.Second conductive layer 3302 are arranged at 3702 on the second insulating barrier.Second insulating barrier 3702 and connection the of the conductive pole 352 through the first fixed seat 350 Second conductive layer 3302 of one fixed seat 350 and the first outer fixed seat 350a.

Another first spring 360 of microelectromechanicdevices devices 300 includes the 3rd p type semiconductor layer 3213, the 3rd n type semiconductor layer 3223.3rd n type semiconductor layer 3223 connects the 3rd p type semiconductor layer 3213 to form the 3rd PN interfaces 3233.In other words, Three PN interfaces 3233 are formed at the joint face of the 3rd p type semiconductor layer 3213 and the 3rd n type semiconductor layer 3223.In addition, first Spring 360 additionally comprises the 3rd insulating barrier 3703 and the 3rd conductive layer 3303.3rd insulating barrier 3703 is arranged at the 3rd N-type semiconductor On layer 3223.3rd conductive layer 3303 is arranged on the 3rd insulating barrier 3703, so that the 3rd n type semiconductor layer 3223 is led with the 3rd Electric layer 3303 is electrically insulated.

First n type semiconductor layer 322 of the 3rd n type semiconductor layer 3223 connection movable mass 320 of the first spring 360 And in first fixed seat 350b the second n type semiconductor layer 3222, to form the first n type semiconductor layer of movable mass 320 The conductance channel of 322 the second polarizing voltages of electric property coupling (Vn).

The movable mass 320 of microelectromechanicdevices devices 300 is the framework of central hollow out.Second fixed seat 380 includes:Second ditch Groove 381, the second fixed seat 380 is divided into the outer fixed seats of fixed seat 380b and second in second to be mutually electrically insulated 380a.Second insulating barrier 3702 is arranged in fixed seat 380b in second, the second outer fixed seat 380a and second groove 381.The Two conductive layers 3302, it is arranged on the second insulating barrier 3702.Conductive pole 382 runs through the second insulating barrier of the second fixed seat 380 3702 and connect the second fixed seat 380 the second conductive layer3302And fixed seat 380b in second.Fixed seat 380b bags in second Containing the second n type semiconductor layer 3222.Second outer fixed seat 380a includes the second n type semiconductor layer 3222.In the present embodiment, Without limitation on the shape of second groove 381.For example, the shape of second groove 381 can be a circular rings or a Q-RING.

The second spring 390,395 of microelectromechanicdevices devices 300 is arranged in framework 320, and is connected along the direction of B-B ' axis Movable mass 320.Second spring 390,395 and the first spring 360,365 are located on same axis B-B ' bearing of trend, make Framework 320 is suitable to rotate around axis B-B '.The second spring 390,395 of microelectromechanicdevices devices 300 includes the 3rd n type semiconductor layer 3223rd, the 3rd insulating barrier 3703 and the 3rd conductive layer 3303.3rd insulating barrier 3703 is arranged on the 3rd n type semiconductor layer 3223 And the 3rd conductive layer 3303 be arranged on the 3rd insulating barrier 3703, make the 3rd n type semiconductor layer 3223 and the 3rd conductive layer 3303 It is electrically insulated.

First N-type semiconductor of the 3rd n type semiconductor layer 3223 connection movable mass 320 of second spring 390,395 322 and second outer fixed seat 380a of layer the second n type semiconductor layer 3222, to form a conductance channel.

Two mutually insulateds can be respectively necessary in order to provide electric current to the first conductive layer 330 on movable mass 320 Conductance channel.For example, the 3rd conductive layer 3303 of the first spring 360 can connect the second conductive layer 3302 of the first fixed seat 350 And first conductive layer 330 first end 330a, can make first end 330a electrical connection earth terminals GND conductance channel to be formed. 3rd conductive layer 3303 of second spring 390 connects the second conductive layer 3302 and the first conductive layer 330 of the second fixed seat 380 Second end 330b, with formed can make the second end 330b can electric property coupling AC power Vac conductance channel.In this way, electricity just can be made The first conductive layer 330 that stream is flowed on movable mass 320.

By different electric property couplings, microelectromechanicdevices devices 300 have sensing magnetic field and sense the ability of acceleration.Work as microcomputer When electric installation 300 will carry out magnetic field measurement,It can makeThe first polarizing voltage of electric property coupling (Vp) of first p type semiconductor layer 321, and make The second polarizing voltage of electric property coupling (Vn) of first n type semiconductor layer 322, wherein the second polarizing voltage (Vn) is more than or equal to first Polarizing voltage (Vp).In addition, the first end 330a electrical connection earth terminal GND and first conductive layer 330 of the first conductive layer 330 Second end 330b electric property coupling AC powers, so as to have an electricity between the first end 330a of the first conductive layer and the second end 330b Potential difference and produce alternating current flow into the first conductive layer 330.Furthermore the common electrical connections of electrode 311 and first end 330a are grounded Hold GND.As the first end 330a and electrical connection earth terminal GND of the first conductive layer 330 coupling AC power the second end 330b The potential difference opposite with above-mentioned high low potential is produced, and produces alternating current and flows into the first conductive layer 330.

Have magnetic field B's in the presence of the environment where microelectromechanicdevices devices 300 has along the magnetic field B of Y direction or along Y direction In the presence of component, the electric current in the first conductive layer 330 will occur reciprocation with magnetic field B and produce Lorentz force F.This labor human relations Hereby power F can be applied on movable mass (framework) 320, and then movable mass 320 is produced by rotary shaft of B-B ' axis Rotate.The rotation of movable mass 320 can cause the electric capacity between the first p type semiconductor layer 321 and electrode 311 to change.Cause This, microelectromechanicdevices devices 300 can change by the electric capacity sensed, then by special integrated circuit (ASIC) calculating, try to achieve Magnetic force B size.In addition, during alternating voltage is changed, because the second polarizing voltage (Vn) is more than or equal to the first pole Change voltage (Vp), the first P-type semiconductor and 321 and the first the first PN interfaces 323 between N-type semiconductor 322 have it is reverse partially Pressure makes the lower surface of the first p type semiconductor layer 321 maintain identical electric charge respectively with electrode 311.In this way, prevent from the first P Type semiconductor layer 321 produces the increase and decrease of electric charge with electrode 311 during alternating voltage is changed, therefore electrode 311 will not produce Raw induced-current, it will not also cause the change of the voltage signal of reading circuit output.Magnetic force is measured to increase microelectromechanicdevices devices 200 When the degree of accuracy.

In the present embodiment, microelectromechanicdevices devices 300 are when the acceleration for carrying out vertical direction (Z axis) measures, as long as making the The first polarizing voltage of electric property coupling (Vp) of one p type semiconductor layer 321 and make the electrical connection earth terminal GND of electrode 311.Change speech It, when the acceleration for carrying out Z axis measures, first without making electric current flow on movable mass 320 leads microelectromechanicdevices devices 300 Electric layer 330.There is acceleration in the presence of the environment where microelectromechanicdevices devices 200 has along the acceleration A z of Z-direction or along Z-direction Spend in the presence of Az component, movable mass 320 can produce rotation by rotary shaft of B-B ' axis.Movable mass 320 turns The dynamic electric capacity that can be caused between the first p type semiconductor layer 321 and electrode 311 changes.Therefore, microelectromechanicdevices devices 300 can be by The change of sense capacitance, then by special integrated circuit (ASIC) calculating, try to achieve acceleration A z size.

First conductive layer 330 of microelectromechanicdevices devices 300 can be the conductive layer of multiple coil, be handed over increasing electric current with magnetic field Mutual induction and caused Lorentz force, and then lift sensitivity when measuring magnetic force of microelectromechanicdevices devices 300.It is in addition, micro electronmechanical The first spring 360,365 and second spring 390,395 of device 300 connect first along the bearing of trend of same axis can kinoplaszm During gauge block 320, a rotation axis B-B ' can be formed.Movable mass 320 can be divided into the movable mass of two parts by this axis. When this axis B-B ' to this two part movable mass center of gravity distance it is unequal when, then can make movable mass 320 into For non-equilibrium mass (unbalanced mass), and then increase sensitivity when measuring magnetic force or the amount of microelectromechanicdevices devices 300 Sensitivity during measuring acceleration.

In one embodiment, magnetic force detecting direction be by taking Y-axis as an example, and the detecting direction of acceleration be by taking Z axis as an example, but The present invention is not restricted to this.Via the direction of appropriate adjustment base version 310, microelectromechanicdevices devices 300 can be made to detect other The magnetic field size of axle and the acceleration magnitude of other axles.For example, if the microelectromechanicdevices devices 300 in Fig. 6 A using Z axis as rotary shaft, revolve After turning 90 degrees, the magnetic field size of X-axis and the acceleration magnitude of Z axis can be sensed.

During in order that the microelectromechanicdevices devices 300 in Fig. 6 A measuring magnetic field and acceleration at the same time, avoid acceleration signal and Magnetic force signal all produces coupling, and the present invention proposes a kind of microelectromechanicdevices devices 400 for having sensor 420, such as the reality depicted in Fig. 6 D Apply example.Microelectromechanicdevices devices 400 include structure sensor 420 (in such as Fig. 6 D, depicted in dotted line wire) and spy's integrated circuit altogether Chip (ASIC Chip) (not shown).Sensor 420 includes the first conductive layer 425, wherein, the first conductive layer 425 includes first Hold 425a and the second end 425b.Spy's IC chip（It is not shown）Include voltage controlled oscillator (Voltage-Controlled Oscillator;VCO) 405, operational amplifier (Operational Amplifer;OA) 410a, 410b, control and switching are single First 430, first reading circuit 440, the second reading circuit 450 and calculating and compensation processor 460.In the present embodiment, sense Device 420 can be such as the microelectromechanicdevices devices 300 in Fig. 6 A to Fig. 6 C, but the present invention is not restricted to this.Illustrate to simplify, this reality Apply the explanation that example will substitute section senses device 420 with microelectromechanicdevices devices 300.

In one embodiment, voltage controlled oscillator 405, operational amplifier 410a, 410b and switch (not shown) can provide One AC power (not shown) gives the first conductive layer 425.Therefore, electric current can be flowed into by the first end 425a of the first conductive layer 425, Flowed out again via the second end 425b of the first conductive layer 425.By switch (not shown), electric current also can be by the first conductive layer 425 the second end 425b is flowed into, then is flowed out via the first end 425a of the first conductive layer 425.In addition, control and switch unit 430 by the control to voltage controlled oscillator 405, can control the electric current supply of conductive layer.In other words, control and switch unit 430 controllable currents are inputted to the first conductive layer 425 or control electric current and not inputted to the first conductive layer 425.

When control is inputted to the first conductive layer 330,425 with the control electric current of switch unit 430, electrode 311 is sensed because of magnetic Power and acceleration cause capacitance variations caused by distance change between movable mass 320 and substrate 310 and produce the second input Signal（It is not shown）.Control receives the second input signal for carrying out self-electrode 311 with switch unit 430, and select to export this second Input signal is to the second reading circuit 450.This second input signal includes acceleration and the capacitance change signal caused by magnetic force. Second reading circuit 450 reads the second input signal from control with switch unit 430, then produces the second output signal 452.This second output signal 452 is the summation signals of acceleration magnitude size and magnetic force value size.

In addition, when control is not inputted to the first conductive layer 330,425 with the control electric current of switch unit 430, first is conductive No current produces on layer 330,425.Now, electrode 311 sense the movable mass 320 caused by acceleration and substrate 310 it Between capacitance caused by distance change change and produce the first input signal (not shown).Control receives with switch unit 430 Carry out the first input signal of self-electrode 311, and select to export this first input signal to the first reading circuit 440.This is first defeated It is only the capacitance change signal caused by acceleration to enter signal.First reading circuit 440 reads the of control and switch unit 430 One input signal, then produce the first output signal 442.This first output signal 442 is the signal of acceleration magnitude size.

Calculate and be electrically coupled to the first reading circuit 440 and the second reading circuit 450 with compensation processor 460, to count Calculate the difference 442 of the second output signal 452 and the first output signal.This difference is the value of magnetic force size.

For above-mentioned microelectromechanicdevices devices 400 by way of time division multiplexing, the first reading circuit of switching 440 and second reads electricity Road 450, it is allowed to read first and second input signal in turn respectively.Therefore microelectromechanicdevices devices 400 can avoid detecting at the same time adds When speed is with magnetic force signal, the noise that measurement signal intercouples is produced, effective hoisting load surveys the degree of accuracy.

Fig. 6 E are the diagrammatic cross-sections of microelectromechanicdevices devices according to another embodiment of the present invention.Fig. 6 E embodiment and figure 6A, 6B are similar with 6C embodiment, therefore same or analogous element is represented with same or analogous symbol, and are not repeated Explanation.The first of the present embodiment local Yu ﹕ microelectromechanicdevices devices 300 ' different from Fig. 6 A, Fig. 6 B and Fig. 6 C embodiment is solid In reservation 340 ', 350 ' and Fig. 6 B, the first fixed seat 340,350 of microelectromechanicdevices devices 300 has different designs.

First fixed seat 340 ' can separately include first groove 341 '.First groove 341 ' can separate the first fixed seat 340 ' The outer a of fixed seat 340 ' of the b of fixed seat 340 ' and first in into first to be mutually electrically insulated.The b of fixed seat 340 ' includes the in first Two p type semiconductor layers 3212 and the second n type semiconductor layer 3222.The first outer a of fixed seat 340 ' includes the second n type semiconductor layer 3222.The b of fixed seat 340 ' the second p type semiconductor layer 3212 is arranged at the second N-type half of the b of fixed seat 340 ' in first in first The bottom surface S1 and side S2 of conductor layer 3222.

First fixed seat 340 ' also includes the second insulating barrier 3702, the second conductive layer 3302 and and conductive pole 342.Second Insulating barrier 3702 is arranged in the b of fixed seat 340 ' in first, the first outer a of fixed seat 340 ' and first groove 341 '.Second is conductive Layer 3302 is arranged at 3702 on the second insulating barrier.Conductive pole 342 runs through a of the first fixed seat 340 ' the second insulating barrier 3702 and connected Connect the second conductive layer 3302 and the first outer a of fixed seat 340 ' of the first fixed seat 340 '.

3rd p type semiconductor layer 3213 of the first spring 365 connects fixed seat in the first p type semiconductor layer 321 and first 340 ' b the second p type semiconductor layer 3212, the first polarizing voltage of electric property coupling of the first p type semiconductor layer 321 can be made to be formed (Vp) conductance channel.

In addition, second p type semiconductor layer 3212 of fixed seat 340 ' coats the second n type semiconductor layer 3222 in first Bottom surface S1 and surface S2.First outer fixed seat 340a ' then only has the second n type semiconductor layer 3222.On the other hand, it is micro- The fixed seat 350 ' of electromechanical assembly 300 ' and the fixed seat 350 of microelectromechanicdevices devices 300 are compared, without groove 351.Thus, originally Configuration relation between the groove and fixed seat of the microelectromechanicdevices devices of invention is not departing from the situation of the scope of the present invention and spirit Under, appropriate adjustment can be made for the allocation position of groove using the upper needs electrically completely cut off according to actual microelectromechanicdevices devices.

Fig. 7 A are similar to 5B embodiment to Fig. 5 A to Fig. 7 B embodiment, and therefore, same or analogous element is with identical Or similar symbol represents, and it is not repeated to illustrate.Microelectromechanicdevices devices 500, which compare microelectromechanicdevices devices 200, also includes a minute surface The configuration of layer 510 is on movable mass 220.Permanent magnet 520 is arranged on two that mass 220 is not connected with the first spring 260 End outside.In one embodiment, microelectromechanicdevices devices 500 can be micro electromechanical scanning mirror（MEMS scanning micro- mirror）.This micro electromechanical scanning mirror can be applied on the image projecting of projector.Microelectromechanicdevices devices 500 can pass through specular layer 510 reflex to laser or light wave etc. on screen, and produce image.More specifically, in the present embodiment, when electric current flows into During the first conductive layer 230 of movable mass 220, electric current can with permanent magnet caused magnetic field reciprocation in the Y-axis direction, And Lorentz force is produced, and then movable mass 220 is rotated according to D-D ' axles.By the size of input current, can control The anglec of rotation of specular layer 510 processed, and then the laser light of incidence or other light is correctly reflexed to firefly by specular layer On curtain, to produce the good projection image of quality.

When microelectromechanicdevices devices 500 rotate because of Lorentz force, the first p type semiconductor layer of movable mass 220 can be caused Electric capacity between 221 and electrode 211 changes.By detecting electric capacity change, can calculate movable mass 220 amount of spin and Vibration frequency.Spy's IC chip (not shown) can thus utilize the information of this amount of spin and vibration frequency, adjustment input The size and frequency of voltage, and then movable mass 220 is reached optimal vibrational state, specular layer 510 is reached optimal Reflecting effect.

First p type semiconductor layer 221 of the movable mass 220 of microelectromechanicdevices devices 500 can electric property coupling first polarize electricity Press (Vp), and make the second polarizing voltage of electric property coupling (Vn) of the first n type semiconductor layer 223 of movable mass 220.In alternating current During pressure conversion, the second polarizing voltage (Vn) can be made to be more than or equal to the first polarizing voltage (Vp), the first P-type semiconductor and 221 and the first the first PN interfaces 223 between N-type semiconductor 222 there is reverse bias to make under the first p type semiconductor layer 221 Surface maintains identical electric charge.In this way, prevent from the increase and decrease that the first p type semiconductor layer 221 produces electric charge with electrode 211.Change Yan Zhi, in alternating voltage transfer process, electrode will not produce induced-current and the voltage signal of reading circuit output also will not Generation is abnormal.Therefore, movable mass can correctly vibrate and microelectromechanicdevices devices 500 is maintained stable projection quality.

In summary, the invention discloses microelectromechanicdevices devices movable mass on there is conductive layer, insulating barrier, p-type half Conductor layer and n type semiconductor layer, and PN interfaces are formed between p type semiconductor layer and n type semiconductor layer.Therefore the present invention The mass block structure of microelectromechanicdevices devices is compared traditional mass block structure and can avoided because of the moment of alternating current conversion, causes to read electricity The anomalous variation of the voltage signal of road output, the invention discloses microelectromechanicdevices devices thus add the degree of accuracy of sensing.This hair The microelectromechanicdevices devices of bright exposure are applied to sensing acceleration or magnetic force.The invention discloses microelectromechanicdevices devices be also applied for feeling simultaneously Measuring acceleration and magnetic force.In addition, the invention discloses microcomputer Denso can also be that the electric capacity of other tool PN interface quality blocks declines Electromechanical sensing device further, e.g. micro electromechanical scanning mirror（MEMS scanning micro-mirror）.

Although the present invention is disclosed with reference to above example, but it is not limited to the present invention, any affiliated technology Have usually intellectual in field, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore this The protection domain of invention should be defined by what the claim enclosed was defined.

Claims

1. a kind of microelectromechanicdevices devices, including：

Substrate, comprising electrode, the upper surface of the substrate is arranged at,

Movable mass, it is arranged above the electrode, comprising：

First p type semiconductor layer；

First n type semiconductor layer, connect first p type semiconductor layer；

First PN interfaces, it is formed at the joint face of first p type semiconductor layer and first n type semiconductor layer；

First conductive layer；And

First insulating barrier, it is arranged between movable mass and the first conductive layer.

2. microelectromechanicdevices devices as claimed in claim 1, in addition to the first fixed seat, including：

Second p type semiconductor layer；

Second n type semiconductor layer, connect second p type semiconductor layer；And

2nd PN interfaces, it is formed at the joint face of second p type semiconductor layer and second n type semiconductor layer.

3. microelectromechanicdevices devices as claimed in claim 2, in addition to the first spring, including：

3rd p type semiconductor layer；

3rd n type semiconductor layer, connect the 3rd p type semiconductor layer；And

3rd PN interfaces, the joint face being formed between the 3rd p type semiconductor layer and the 3rd n type semiconductor layer, wherein should First spring connects first p-type half along the movable mass, the 3rd p type semiconductor layer is connected with the direction of a diameter parallel Conductor layer and second p type semiconductor layer.

4. microelectromechanicdevices devices as claimed in claim 3, the wherein movable mass are framework, and the microelectromechanicdevices devices also include Second spring, the second spring are arranged in the framework and along being connected the movable mass with the direction of the diameter parallel, and this Two springs are located on collinear bearing of trend with first spring, and the movable mass is suitable to rotate around an axis.

5. microelectromechanicdevices devices as claimed in claim 2, wherein first fixed seat separately include first groove, this first is fixed Seat is separated into fixed seat and the first outer fixed seat in first to be mutually electrically insulated, this in first fixed seat include second p-type Semiconductor layer and second n type semiconductor layer, the first outer fixed seat include second n type semiconductor layer, and wherein this is in first Second p type semiconductor layer of fixed seat is arranged at the bottom surface and side of second n type semiconductor layer of the fixed seat in first.

6. microelectromechanicdevices devices as claimed in claim 5, wherein the first fixed seat also includes：

Second insulating barrier, this is arranged in first in fixed seat, the first outer fixed seat and the first groove；

Second conductive layer, it is arranged on second insulating barrier；And

Conductive pole, through first fixed seat second insulating barrier and connect second conductive layer of first fixed seat with should First outer fixed seat.

7. microelectromechanicdevices devices as claimed in claim 5, separately include the first spring, first spring includes：

3rd p type semiconductor layer；

3rd PN interfaces, it is formed at the joint face of the 3rd p type semiconductor layer and the 3rd n type semiconductor layer, wherein the 3rd P Type semiconductor layer connects first p type semiconductor layer and second p type semiconductor layer of the fixed seat in first.

8. microelectromechanicdevices devices as claimed in claim 2, wherein second p type semiconductor layer are arranged at second N-type semiconductor The bottom surface and side of layer.

9. microelectromechanicdevices devices as claimed in claim 3, wherein second p type semiconductor layer are arranged at second N-type semiconductor The bottom surface and side of layer, and second p type semiconductor layer coats the whole bottom surface of second n type semiconductor layer, second p-type half Conductor layer connects the 3rd p type semiconductor layer.

10. microelectromechanicdevices devices as claimed in claim 4, in addition to the second fixed seat, are arranged in the framework, wherein this second Fixed seat includes：

Second groove, second fixed seat is divided into fixed seat and the second outer fixed seat in second to be mutually electrically insulated；

Second insulating barrier, this is arranged in second in fixed seat, the second outer fixed seat and the second groove；

Second conductive layer, it is arranged on second insulating barrier；And

Conductive pole, through second fixed seat second insulating barrier and connect second fixed seat second conductive layer and should Fixed seat in second.

11. microelectromechanicdevices devices as claimed in claim 1, wherein the first p type semiconductor layer first polarizing voltage of electric property coupling (Vp), the first n type semiconductor layer second polarizing voltage of electric property coupling (Vn), and second polarizing voltage be more than or equal to this One polarizing voltage；First conductive layer separately includes first end and the second end, wherein the first end electrical connection earth terminal (GND), And the second end electric property coupling AC power, and the electrode and the common electrical connection earth terminal (GND) of the first end.

12. microelectromechanicdevices devices as claimed in claim 1, the wherein movable mass are suitable to rotate around an axis, first p-type The lower surface of semiconductor layer is towards the electrode, the lower surface of first n type semiconductor layer and the upper table of first p type semiconductor layer Face connects；First insulating barrier is arranged at the upper surface of first n type semiconductor layer, and it is first exhausted that first conductive layer is arranged at this In edge layer.

13. a kind of microelectromechanicdevices devices, suitable for detecting magnetic force, including：

Substrate, comprising electrode, it is arranged at the upper surface of the substrate；

Movable mass, the part substrate and electrode top are arranged at, and suitable for rotating about the axis, the movable mass bag Include：

First p type semiconductor layer, its lower surface is towards the electrode；

First n type semiconductor layer, its lower surface are connected with the upper surface of first p type semiconductor layer；

First insulating barrier, it is arranged at the upper surface of first n type semiconductor layer；

First conductive layer, it is arranged on first insulating barrier；

First spring, edge are connected the movable mass with the direction of the diameter parallel, including：

3rd p type semiconductor layer, connect first p type semiconductor layer；

3rd n type semiconductor layer, its lower surface are connected with the upper surface of the 3rd p type semiconductor layer；And

3rd PN interfaces, it is formed at the joint face of the 3rd p type semiconductor layer and the 3rd n type semiconductor layer.

14. microelectromechanicdevices devices as claimed in claim 13, the wherein movable mass are the framework of central hollow out, and the microcomputer Electric installation also includes second spring, is arranged in the framework, and along being connected the movable mass with the direction of the axis, and this Two springs are located on the bearing of trend of same axis with first spring, and the framework is suitable to rotate around the axis.

15. microelectromechanicdevices devices as claimed in claim 14, in addition to：

Second fixed seat, it is arranged in the framework, second fixed seat includes:

Second groove, it is fixed outside fixed seat and second second fixed seat is divided into second to be mutually electrically insulated Seat；

Second conductive layer, it is arranged on second insulating barrier；And

16. microelectromechanicdevices devices as claimed in claim 13, wherein the first p type semiconductor layer first polarizing voltage of electric property coupling (Vp), the first n type semiconductor layer second polarizing voltage of electric property coupling (Vn), and second polarizing voltage be more than or equal to this The absolute value of one polarizing voltage；The conductive layer additionally comprises first end and the second end, wherein the first end electrical connection earth terminal , and the second end electric property coupling AC power, and the electrode and the common electrical connection earth terminal (GND) of the first end (GND).

17. a kind of microelectromechanicdevices devices, including：

Framework, it is arranged above the electrode and suitable for rotating about the axis, the framework includes：

First p type semiconductor layer, its lower surface is towards the electrode；

First conductive layer, it is arranged on first insulating barrier；

First spring, the framework is connected along with the direction of the axis；And

Second spring, be arranged in the framework, and along being connected the framework with the direction of the axis, and the second spring with this first Spring is located on the bearing of trend of same axis, and the framework is suitable to rotate around the axis.

18. microelectromechanicdevices devices as claimed in claim 17, in addition to the first fixed seat, comprising：

Second p type semiconductor layer, its lower surface is towards the substrate；

Second n type semiconductor layer, its lower surface are connected with the upper surface of the 2nd P semiconductor layers；And

19. microelectromechanicdevices devices as claimed in claim 18, wherein first fixed seat separately include:First groove, to should First fixed seat is divided into fixed seat and the first outer fixed seat in first to be mutually electrically insulated, and include should for fixed seat in first for this Second p type semiconductor layer and second n type semiconductor layer, the first outer fixed seat include the second n type semiconductor layer, wherein this In one second p type semiconductor layer of fixed seat be arranged at the bottom surface of second n type semiconductor layer of the fixed seat in first with Side.

20. microelectromechanicdevices devices as claimed in claim 19, wherein first fixed seat also include：

Second conductive layer, it is arranged on second insulating barrier；And

Conductive pole, through first fixed seat second insulating barrier and connect first fixed seat first conductive layer and should First outer fixed seat.

21. microelectromechanicdevices devices as claimed in claim 19, separately include the first spring, first spring includes：

3rd p type semiconductor layer；

3rd PN interfaces, the joint face being formed between the 3rd p type semiconductor layer and the 3rd n type semiconductor layer, wherein should 3rd p type semiconductor layer connects first p type semiconductor layer and second p type semiconductor layer of the fixed seat in first.

22. microelectromechanicdevices devices as claimed in claim 18, wherein second p type semiconductor layer are arranged at second N-type and partly led The bottom surface and side of body layer.

23. microelectromechanicdevices devices as claimed in claim 17, in addition to:

Second fixed seat, it is arranged in the framework, second fixed seat includes:

Second groove, it is fixed outside fixed seat and second second fixed seat is separated into second to be mutually electrically insulated Seat；

Second conductive layer, set on second insulating barrier；And

Conductive pole, through second insulating barrier of the fixed seat in second, and connect this in second fixed seat this is second conductive Fixed seat in layer and second.

24. a kind of microelectromechanicdevices devices, suitable for detecting magnetic force and acceleration, including：

Movable mass, it is arranged above the electrode and suitable for rotating about the axis, the movable mass includes：

First p type semiconductor layer, its lower surface is towards the electrode；

First conductive layer is arranged on first insulating barrier；And

Control and switch unit, to control the electric current of the first conductive layer to supply.

25. microelectromechanicdevices devices as claimed in claim 24, in addition to the first fixed seat, including：

Second n type semiconductor layer, its lower surface are connected with the upper surface of second p type semiconductor layer；And

26. microelectromechanicdevices devices as claimed in claim 25, in addition to the first spring, this is connected along with the direction of the diameter parallel Movable mass, first spring include：

3rd p type semiconductor layer；

3rd PN interfaces, it is formed at the joint face of the 3rd p type semiconductor layer and the 3rd n type semiconductor layer, wherein the 3rd P Type semiconductor layer connects first p type semiconductor layer and second p type semiconductor layer.

27. microelectromechanicdevices devices as claimed in claim 26, the wherein movable mass are the framework of central hollow out, and the microcomputer Electric installation also includes second spring, is arranged in the framework and connects the movable mass along the direction of the axis, second bullet Spring includes the 3rd n type semiconductor layer, and the second spring is located on the bearing of trend of same axis with first spring, and the framework is fitted Rotated in around an axis.

28. microelectromechanicdevices devices as claimed in claim 27, in addition to：

Second fixed seat, it is arranged in the framework, second fixed seat includes：

Second n type semiconductor layer；

Second groove, it is fixed outside fixed seat and second second fixed seat is divided into second to be mutually electrically insulated Seat, the 3rd n type semiconductor layer of the wherein second spring connect second n type semiconductor layer in the second outer fixed seat and First n type semiconductor layer of the movable mass；

Second conductive layer, it is arranged on second insulating barrier；And

Conductive pole, through second fixed seat second insulating barrier and connect second fixed seat second conductive layer and should Interior fixed seat.

29. microelectromechanicdevices devices as claimed in claim 24, wherein the first p type semiconductor layer first polarizing voltage of electric property coupling (Vp), the first n type semiconductor layer second polarizing voltage of electric property coupling (Vn), and second polarizing voltage be more than or equal to this One polarizing voltage；First conductive layer separately includes first end and the second end, wherein the first end electrical connection earth terminal (GND), The second end electric property coupling AC power, and the electrode and the common electrical connection earth terminal (GND) of the first end.

30. microelectromechanicdevices devices as claimed in claim 24, in addition to the first reading circuit are electrically coupled to the electrode, when the control When system is not inputted to first conductive layer with switch unit control electric current, first reading circuit reads first from the electrode Input signal, and produce the first output signal.

31. microelectromechanicdevices devices as claimed in claim 24, in addition to the second reading circuit are electrically coupled to the electrode, when the control When system is inputted to first conductive layer with switch unit control electric current, second reading circuit reads second from the electrode Input signal, and produce the second output signal.

32. microelectromechanicdevices devices as claimed in claim 24, in addition to the first reading circuit and the second reading circuit, electrical respectively The electrode is coupled to, wherein when the control and switch unit control electric current are not inputted to first conductive layer, first reading Circuit reads the first input signal from the electrode, and produces the first output signal；When the control and switch unit control electricity When stream input is to first conductive layer, second reading circuit reads the second input signal from the electrode, and produces the Two output signals.

33. microelectromechanicdevices devices as claimed in claim 32, in addition to calculate and be electrically coupled to first reading with compensation processor Sense circuit and second reading circuit, to calculate the difference of second output signal and first output signal.