CN101561510B - Chip of three-dimensional MEMS geophone and preparation method thereof - Google Patents

Chip of three-dimensional MEMS geophone and preparation method thereof Download PDF

Info

Publication number
CN101561510B
CN101561510B CN2009100594526A CN200910059452A CN101561510B CN 101561510 B CN101561510 B CN 101561510B CN 2009100594526 A CN2009100594526 A CN 2009100594526A CN 200910059452 A CN200910059452 A CN 200910059452A CN 101561510 B CN101561510 B CN 101561510B
Authority
CN
China
Prior art keywords
girder
semi
substrate
chip
magnetron sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009100594526A
Other languages
Chinese (zh)
Other versions
CN101561510A (en
Inventor
谌贵辉
任涛
席建中
赵万民
唐斌
任诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southwest Petroleum University
Original Assignee
Southwest Petroleum University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest Petroleum University filed Critical Southwest Petroleum University
Priority to CN2009100594526A priority Critical patent/CN101561510B/en
Publication of CN101561510A publication Critical patent/CN101561510A/en
Application granted granted Critical
Publication of CN101561510B publication Critical patent/CN101561510B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a chip of a three-dimensional MEMS geophone and a preparation method thereof. The chip comprises a substrate B (1), a substrate A (2), an X-axis cantilever beam (6), an X-axis fixed electrode (7), an X-axis mass block and moving electrode (8), and is characterized in that the same chip is also provided with capacitive mechanical vibration system micro-structures (3, 4) consisting of cantilever beams, fixed electrodes, mass block and moving electrodes which are in the Y and Z axis directions and are the same as those on an X axis. The chip for the three-dimensional MEMS geophone has the advantages of high resolution, high fidelity, high precision, good low-frequency response capability, convenient detection of three-dimensional seismic signals at the same point and the like, and is particularly suitable to be as a sensor for receiving seismic waves in a digitalized seismic exploration system.

Description

Chip of three-dimensional MEMS geophone and preparation method thereof
Technical field
The present invention relates to seismic prospecting device accessory, particularly a kind of chip of three-dimensional MEMS geophone and preparation method thereof.
Background technology
Seismoreceiver is a large amount of sensors that use in the oil and natural gas seismic prospecting, and its purposes is exactly to detect the seismic signal of artificial excitation in the earthquake.
It is undesirable that traditional seismoreceiver (moving-coil type dynamo-electric induction pick-up) carries out wave datum (the particularly S ripple) quality that obtains in the 3-component earthquake exploration, as detecting the deep layer low frequency seismic signal below the 10Hz; Dynamic range is little; It is big to crosstalk between the three dimensional signal; Poor sensitivity etc. are for the post-processed effect is had a greatly reduced quality.The received geological data of the wave detector of use MEMS technology can keep the seismic signal of 3Hz on final superposition of data, high fdrequency component also has tangible lifting, its dynamic range in the 3-component earthquake exploration, can be separated P ripple and S ripple greater than 100dB better.But the three-component digital sensor is the three-component digital sensor that is mounted to three MEMS acceleration transducer quadrature right angles at present, be not easy to detect 3-D seismics signal like this with putting, and also uneconomical, its resolution, adopted precision, fidelity LF-response ability etc. remain further to be improved.
Summary of the invention
The objective of the invention is to overcome the weak point of above-mentioned existing seismoreceiver, a kind of chip of three-dimensional MEMS geophone and preparation method thereof is provided.The present invention realizes by following technical proposals, the present invention includes: substrate B, substrate A, the X-axis semi-girder, the X-axis fixed electorde, X-axis mass and float electrode is characterized in that it also is provided with the capacitive character mechanical vibrating system microstructure that the axial semi-girder of the Y identical with X-axis, Z, fixed electorde, mass and float electrode constitute on same chip.
Adopt MEMS seismoreceiver chip of the present invention to have that high resolving power, high-fidelity, precision high and low frequency responding ability are good, dynamic range is convenient to detect the characteristics such as three dimensional signal with point greatly.
Said substrate A, B adopt insulating material such as alumina ceramic plate, silicon nitride.
Said semi-girder adopts silicon or silicon nitride high-strength material.
The metal material that said lead and electrode adopt gold or silver or platinum to conduct electricity very well.
The preparation method of chip of three-dimensional MEMS geophone of the present invention is characterized in that respectively two silicon base A, B being processed respectively, aims at the bonding encapsulation again; Its step is as follows:
Make the A substrate:
Step 1 adopts photoetching process to etch three grooves in substrate, and three grooves are X, Y, Z perpendicular array;
Step 2 deposits electric conductivity good metal such as one deck gold, silver or platinum by magnetron sputtering on the A substrate, and peels off formation lead and fixed electorde with the acetone immersion;
Step 3 adopts spin coating micromechanics organic sacrificing layer polyimide, adopts photoetching process to form the semi-girder model on sacrifice layer, and by semi-girder materials such as magnetron sputtering method depositing silicon or silicon nitrides, forms semi-girder and mass behind the removal sacrifice layer;
Step 4 is passed through electric conductivity good metal such as magnetron sputtering deposition one deck gold, silver or platinum, and soaks the float electrode of peeling off on the formation semi-girder with acetone;
Make the B substrate:
Step 1 adopts photoetching process to etch three grooves on substrate B, and three grooves are corresponding with on-chip three grooves of A;
Step 2 deposits electric conductivity good metal such as one deck gold, silver or platinum by magnetron sputtering at the B substrate, and peels off formation lead and fixed electorde etc. with the acetone immersion;
Step 3 is by the method formation X-axis of gaseous state corrosion or plasma etching and the semi-girder on the Z axle;
Step 4 is increased the semi-girder of X-axis and Z axle by semi-girder materials such as magnetron sputtering method depositing silicon or silicon nitrides;
Step 5 is passed through electric conductivity good metal such as magnetron sputtering deposition one deck gold, silver or platinum, and soaks the float electrode of peeling off on the formation semi-girder with acetone;
Step 6 is with substrate A, the encapsulation of B bonding.
Through after the above-mentioned steps, just can prepare chip of three-dimensional MEMS geophone of the present invention.
By the explanation of above-mentioned situation, as can be known the present invention with a MEMS chip just can the perception seismic event three-dimensional information, put three-dimensional information especially together, and be separately converted to the electric signal of X, Y, Z three directions.Chip of three-dimensional MEMS geophone of the present invention has high resolving power, high-fidelity, the precision height, the LF-response ability waits well especially, be fit to the digital seismic exploration system and do to receive the use of seismic event sensor, fixed electorde is connected with power supply and C-V (capacitance-voltage) change-over circuit during use, experience the signal of earthquake when the MEMS chip, semi-girder is scratched, the fixed electorde on semi-girder both sides and the electric capacity between the semi-girder are changed, by " capacitance-voltage " translation circuit, the A/D change-over circuit, signal amplification circuits etc. are handled and are obtained the seismic event three-dimensional information.
Description of drawings
Fig. 1 three-dimensional MEMS geophone isolating construction of the present invention synoptic diagram;
Fig. 2 is a three-dimensional MEMS geophone structure cut-open view;
1-substrate B, 2-substrate A, 3-Z axle capacitive character mechanical vibrating system microstructure, 4-Y axle capacitive character mechanical vibrating system microstructure, 5-X axle capacitive character mechanical vibrating system microstructure, 6-X axle semi-girder, 7-X axle fixed electorde, 8-X axoplasm gauge block and float electrode.
Fig. 3 three-dimensional MEMS geophone preparation technology of the present invention flow process products obtained therefrom synoptic diagram.
Embodiment
Embodiment 1:
As shown in Figure 1, 2, at two 20 * 20 * 0.5mm 2Silicon chip 1,2 on make the chip of three-dimensional MEMS geophone array:
(1) adopts 20 * a 20 * 0.5mm 2Silicon chip as substrate A2, photoetching forms three grooves after cleaning, three rectangular perpendicular array of groove, wherein X, the dark 20-40 μ of Z-direction groove m, present embodiment is selected 20 μ m for use, the dark 3 μ m of Y direction groove are shown in a among Fig. 3; Sputter forms one deck 0.5 μ m gold again, and lead through peeling off formation and fixed electorde 7 are shown in the b among Fig. 3;
(2) by spin coating micromechanics organic sacrificing layer polyimide 3 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon cantilever material of 2.5 μ m by magnetron sputtering method, form semi-girder 6 and mass 8 after removing sacrifice layer, shown in the c among Fig. 3;
(3) pass through the thick gold of magnetron sputtering deposition one deck 0.5 μ m, and soak the float electrode of peeling off on the formation semi-girder 68, shown in the d among Fig. 3 with acetone;
(4) adopt 20 * a 20 * 0.5mm 2Silicon chip as substrate B1, photoetching form to form three grooves after cleaning, three grooves are corresponding with three grooves of A substrate, wherein X, the dark 20-40 μ of Z-direction groove m, present embodiment is selected 20 μ m for use, the dark 3 μ m of Y direction groove are shown in the e among Fig. 3; The thick gold of sputtering sedimentation one deck 0.5 μ m, and soak to peel off with acetone and form lead and fixed electorde 7;
(5) adopt spin coating micromechanics organic sacrificing layer polyimide 3 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon materials of 2.5 μ m by magnetron sputtering method, form the semi-girder 6 and the mass 8 of X-axis 5 and Z axle 3 capacitive character mechanical vibrating system microstructures behind the removal sacrifice layer, shown in the g among Fig. 3;
(6), increase the semi-girder 10 μ m of X-axis and Z axle, shown in the h among Fig. 3 by magnetron sputtering method depositing silicon semi-girder material; And, soak the float electrode of peeling off on the formation semi-girder 68 with acetone, shown in the i among Fig. 3 by the thick gold of magnetron sputtering deposition one deck 0.5 μ m;
(7) with substrate A, the encapsulation of B bonding, shown in the j among Fig. 3.
Critical size: semi-girder 100 * 50 μ m of Y direction capacitive character mechanical vibrating system microstructure 4 2Mass 60 * 50 μ m 2X and Z-direction semi-girder 80 * 30 μ m 2Mass 40 * 30 μ m 2
Embodiment 2:
As shown in Figure 1, 2, at two 20 * 20 * 0.5mm 2Silicon chip 1,2 on make the three-dimensional MEMS geophone array:
(1) adopts 20 * a 20 * 0.5mm 2Silicon chip as substrate A2, photoetching forms three grooves after cleaning, wherein X, the dark 30 μ m of Z-direction groove, the dark 3 μ m of Y direction groove are shown in a among Fig. 3; Sputter forms one deck 0.5 μ m gold again, and lead through peeling off formation and fixed electorde 7 are shown in the b among Fig. 3;
(2) by spin coating micromechanics organic sacrificing layer (polyimide) 4 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon cantilever material of 2.5 μ m by magnetron sputtering method, form semi-girder 6 and mass 8 after removing sacrifice layer, shown in the c among Fig. 3;
(3) pass through the thick gold of magnetron sputtering deposition one deck 0.5 μ m, and soak the float electrode of peeling off on the formation semi-girder 68, shown in the d among Fig. 3 with acetone;
(4) adopt 20 * a 20 * 0.5mm 2Silicon chip as substrate B1, photoetching form to form three grooves after cleaning, wherein X, the dark 30 μ m of Z-direction groove, the dark 3 μ m of Y direction groove are shown in the e among Fig. 3; The thick gold of sputtering sedimentation one deck 0.5 μ m, and soak to peel off with acetone and form lead and fixed electorde 7;
(5) adopt spin coating micromechanics organic sacrificing layer polyimide 3 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon materials of 2.5 μ m by magnetron sputtering method, form the semi-girder 6 and the mass 8 of X-axis 5 and Z axle 3 capacitive character mechanical vibrating system microstructures behind the removal sacrifice layer, shown in the g among Fig. 3;
(6), increase the semi-girder 10 μ m of X-axis and Z axle, shown in the h among Fig. 3 by magnetron sputtering method depositing silicon semi-girder material; And, soak the float electrode of peeling off on the formation semi-girder 68 with acetone, shown in the i among Fig. 3 by the thick gold of magnetron sputtering deposition one deck 0.5 μ m;
(7) with substrate A, the encapsulation of B bonding, shown in the j among Fig. 3.
Critical size: capacitive character mechanical vibrating system microstructure 4 semi-girders 110 * 60 μ m of Y direction 2Mass 80 * 80 μ m 2X and Z-direction semi-girder 100 * 40 μ m 2Mass 50 * 40 μ m 2
Embodiment 3:
As shown in Figure 1, 2, at two 20 * 20 * 0.5mm 2Silicon chip 1,2 on make the three-dimensional MEMS geophone array:
(1) adopts 20 * a 20 * 0.5mm 2Silicon chip as substrate A2, photoetching forms three grooves after cleaning, wherein X, the dark 40 μ m of Z-direction groove, the dark 3 μ m of Y direction groove are shown in a among Fig. 3; Sputter forms one deck 0.5 μ m gold again, and lead through peeling off formation and fixed electorde 7 are shown in the b among Fig. 3;
(2) by spin coating micromechanics organic sacrificing layer polyimide 4 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon cantilever material of 2.5 μ m by magnetron sputtering method, form semi-girder 6 and mass 8 after removing sacrifice layer, shown in the c among Fig. 3;
(3) pass through the thick gold of magnetron sputtering deposition one deck 0.5 μ m, and soak the float electrode of peeling off on the formation semi-girder 68, shown in the d among Fig. 3 with acetone;
(4) adopt 20 * a 20 * 0.5mm 2Silicon chip as substrate B, photoetching form to form three grooves after cleaning, wherein X, the dark 40 μ m of Z-direction groove, the dark 3 μ m of Y direction groove are shown in the e among Fig. 3; The thick gold of sputtering sedimentation one deck 0.5 μ m, and soak to peel off with acetone and form lead and fixed electorde 7;
(5) adopt spin coating micromechanics organic sacrificing layer polyimide 3 μ m, adopt photoetching process on sacrifice layer, to form the semi-girder model, and deposit the thick silicon materials of 2.5 μ m by magnetron sputtering method, form the semi-girder 6 and the mass 8 of X-axis 5 and Z axle 3 capacitive character mechanical vibrating system microstructures behind the removal sacrifice layer, shown in the g among Fig. 3;
(6), increase the semi-girder 10 μ m of X-axis and Z axle, shown in the h among Fig. 3 by magnetron sputtering method depositing silicon semi-girder material; And, soak the float electrode of peeling off on the formation semi-girder 68 with acetone, shown in the i among Fig. 3 by the thick gold of magnetron sputtering deposition one deck 0.5 μ m;
(7) with substrate A, the encapsulation of B bonding, shown in the j among Fig. 3.
Critical size: semi-girder 120 * 60 μ m of Y direction capacitive character mechanical vibrating system microstructure 4 2Mass 80 * 80 μ m 2X and Z-direction semi-girder 110 * 50 μ m 2Mass 50 * 50 μ m 2
Photoresist is selected the thick glue of AZ-9260 micromechanics for use, by the acceleration of control whirl coating and the thickness that linear velocity is controlled photoresist.

Claims (1)

1. the preparation method of a chip of three-dimensional MEMS geophone is characterized in that, follows these steps to carry out:
Make the A substrate:
Step 1 adopts photoetching process to etch three grooves in substrate, and three grooves are X, Y, Z perpendicular array;
Step 2 deposits one deck gold, silver or platinum electric conductivity good metal by magnetron sputtering on the A substrate, and peels off formation lead and fixed electorde with the acetone immersion;
Step 3 adopts spin coating micromechanics organic sacrificing layer, adopts photoetching process to form the semi-girder model on sacrifice layer, and by magnetron sputtering method depositing silicon or silicon nitride cantilevers beam material, forms semi-girder and mass behind the removal sacrifice layer;
Step 4 is passed through magnetron sputtering deposition one deck gold, silver or platinum electric conductivity good metal, and soaks the float electrode of peeling off on the formation semi-girder with acetone;
Make the B substrate:
Step 5 adopts photoetching process to etch three grooves on substrate B, and three grooves are corresponding with on-chip three grooves of A;
Step 6 deposits one deck gold, silver or platinum electric conductivity good metal by magnetron sputtering at the B substrate, and peels off formation lead and fixed electorde with the acetone immersion;
Step 7 is by the method formation X-axis of gaseous state corrosion or plasma etching and the semi-girder on the Z axle;
Step 8 is increased the semi-girder of X-axis and Z axle by magnetron sputtering method depositing silicon or silicon nitride cantilevers beam material;
Step 9 is passed through magnetron sputtering deposition one deck gold, silver or platinum electric conductivity good metal, and soaks the float electrode of peeling off on the formation semi-girder with acetone;
Bonding:
Step 10 is aimed at the bonding encapsulation with substrate A, B.
CN2009100594526A 2009-05-25 2009-05-25 Chip of three-dimensional MEMS geophone and preparation method thereof Expired - Fee Related CN101561510B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009100594526A CN101561510B (en) 2009-05-25 2009-05-25 Chip of three-dimensional MEMS geophone and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009100594526A CN101561510B (en) 2009-05-25 2009-05-25 Chip of three-dimensional MEMS geophone and preparation method thereof

Publications (2)

Publication Number Publication Date
CN101561510A CN101561510A (en) 2009-10-21
CN101561510B true CN101561510B (en) 2011-09-28

Family

ID=41220391

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009100594526A Expired - Fee Related CN101561510B (en) 2009-05-25 2009-05-25 Chip of three-dimensional MEMS geophone and preparation method thereof

Country Status (1)

Country Link
CN (1) CN101561510B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304275B2 (en) * 2010-08-31 2012-11-06 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
CN102486541B (en) * 2010-12-02 2014-06-11 中国科学院地质与地球物理研究所 MEMS (Micro-electromechanical System) digital geophone
CN103274351B (en) * 2013-05-21 2015-07-08 中国科学院电子学研究所 Electrochemistry geophone electrode sensitive core based on MEMS and manufacturing method thereof
CN104330645B (en) * 2014-11-03 2017-11-21 中国舰船研究设计中心 A kind of microwave crystal detector preparation method
JP6451028B2 (en) * 2015-01-23 2019-01-16 特許機器株式会社 Ground vibration measuring device
CN110161911A (en) * 2019-05-08 2019-08-23 西南石油大学 A kind of industrial control unit (ICU) with interface protection of the distant control device of integrated wireless

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100335865C (en) * 2005-06-30 2007-09-05 西安交通大学 Multiple sensor integrated chip

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100335865C (en) * 2005-06-30 2007-09-05 西安交通大学 Multiple sensor integrated chip

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2004-93274A 2004.03.25
Mark A. Lemkin et al..A 3-Axis Force Balanced Accelerometer Using a Single Proof-Mass.《1997 International Conference on Solid-state Sensors and Actuators》.1997,1185-1188. *
王育才等.一种具有"8悬臂梁-质量块"结构的新型硅微加速度计.《半导体学报》.2007,第28卷(第5期),783-788.

Also Published As

Publication number Publication date
CN101561510A (en) 2009-10-21

Similar Documents

Publication Publication Date Title
CN101561510B (en) Chip of three-dimensional MEMS geophone and preparation method thereof
CN109485011B (en) MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process
CN105137121B (en) A kind of preparation method of low stress accelerometer
CN109244232B (en) Piezoelectric transducer of micro-electromechanical system and manufacturing method
CN104677528B (en) Capacitive pressure sensor and preparation method thereof
CN102645565B (en) Micro machinery magnetic field sensor and preparation method thereof
CA2842769C (en) Sensor with vacuum-sealed cavity
CN107917750B (en) MEMS (micro-electromechanical system) thermal type acoustic particle sensor
CN105784222B (en) Bulk acoustic wave wall surface shearing stress sensor
CN102680917A (en) Micro-mechanical magnetic field sensor and preparation method thereof
CN109945966A (en) The single electrode hydrophone of AlN bilayer film
CN102520032B (en) CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof
Scudero et al. MEMS technology in seismology: A short review
CN111811638A (en) Piezoelectric type induction unit and hydrophone applying same
CN103267534B (en) A kind of magnetostrictive biosensor
CN107438213B (en) Hydrophone and manufacturing process thereof
CN102435773B (en) Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof
CN103217553A (en) Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode
CN107172553A (en) A kind of ultrabroad band MEMS transducer
CN103454345B (en) Based on the marine biochemical matter monitoring sensor of CMUT and preparation thereof and measuring method
CN104793015A (en) Single-silicon-wafer compound sensor structure with pressure sensor embedded in accelerometer and manufacturing method
CN106706108A (en) MEMS (micro-electromechanical system) co-vibration type spherical vibrator vector hydrophone based on piezoelectric effect
Chen et al. A dual sensing modes capacitive tactile sensor for proximity and tri-axial forces detection
CN113029321A (en) Capacitive MEMS vector acoustic wave sensor capable of inhibiting vibration interference and processing method thereof
CN110615402A (en) MEMS piezoelectric vector hydrophone with simply supported cantilever beam structure and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110928

Termination date: 20120525