CN102435773B - Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof - Google Patents
Differential micro capacitor for single-shaft precision accelerometer and preparation method thereof Download PDFInfo
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- CN102435773B CN102435773B CN201110298158.8A CN201110298158A CN102435773B CN 102435773 B CN102435773 B CN 102435773B CN 201110298158 A CN201110298158 A CN 201110298158A CN 102435773 B CN102435773 B CN 102435773B
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Abstract
The invention discloses a differential micro capacitor for a single-shaft precision accelerometer and a preparation method thereof. The micro capacitor comprises an upper electrode, a movable electrode and a lower electrode, wherein the upper electrode and the movable electrode are kept hung in the air with the lower electrode by a post; the upper and lower electrodes are both protected by equipotential rings; the movable electrode is hung in the air by the post and takes a spring as a flexible support; the upper and lower electrodes and the movable electrode are all round electrodes, and each electrode has a signal lead connected into a signal circuit; and the movable electrode and the upper and lower electrodes form two differential capacitors respectively. The differential micro capacitor is realized by employing technologies such as photo-etching, sputtering, electroplating, corroding, and the like in an MEMS (Micro Electro Mechanical System) process. In the invention, the upper electrode, the lower electrode and the movable electrode form the differential capacitors; the value of a capacitor is increased while the value of the other capacitor is decreased in a working process; and the output value directly reflects the detection quantity through the signal processing, so that the aim of detecting the accelerated speed is fulfilled.
Description
Technical field
the present invention relates to single-shaft precision accelerometer, specifically, relate to a kind of high sensitivity differential micro capacitor and preparation method for single-shaft precision acceleration transducer.
Background technology
that capacitance acceleration transducer has is simple in structure, highly sensitive, dynamic response characteristic is good, anti-overload ability is large, to series of advantages such as mal-condition strong adaptability, low price such as high temperature, radiation and judders, be therefore considered to a kind of rising sensor.
in decades, the multiplex piezoelectric acceleration transducer of people or piezoresistance type acceleration sensor come measuring vibrations and impact.But for measuring long ballistic motion of duration, it is extremely important that sensor used has zero-frequency response.Piezoelectric acceleration sensor is firm, but frequency response can not arrive zero, and though piezoresistance type acceleration sensor can be surveyed responsive stable state acceleration, but easy stroke excessively and resonance cause damage, needed precision while measuring that it does not have firmness degree that some application scenarios requires and low g value, and to responsive to temperature.
become capacitance acceleration transducer and just in time made up above-mentioned defect, this acceleration transducer can bear larger overshoot and because it has avoided pressure drag temperature effect, therefore temperature characterisitic is relatively good.Utilize that modern new technology is made, be the vibration that is exclusively used in the low g value of measuring stable state or low frequency according to the capacitance acceleration transducer that becomes capacitance principle work, but can tolerate the impact of high g value and do not damage.
in Chinese patent (patent No. 200610118484.5), propose based on silicon base differential capacitance type acceleration sensor, the present invention is based on the sensitivity error that electric capacity edge effect brings, design a kind of differential micro capacitor that contains equal potential belt, greatly increase sensitivity, and the present invention is based on non-silicon (glass) substrate, greatly reduce cost.
Summary of the invention
the object of the present invention is to provide a kind of differential micro capacitor for single-shaft precision accelerometer, in not increasing complex process degree, produce highly sensitive micro-variable capacitance, the micro-variable capacitance in the present invention is used for various occasions as acceleration transducer.
for achieving the above object, the present invention is by the following technical solutions:
the invention provides a kind of differential micro capacitor for single-shaft precision accelerometer, in order to improve sensitivity, nonlinear error reduction, the present invention adopts differential capacitance, like this because symmetry can reduce the measuring error that electrostatic force causes, the error that effectively environmental factor such as compensates causes simultaneously.The sensitivity error and the nonlinearity erron that bring due to the edge effect of electric capacity, the present invention adopts equal potential belt to protect the edge effect that greatly reduces electric capacity simultaneously.
differential micro capacitor for single-shaft precision accelerometer of the present invention comprises top electrode, bottom electrode and movable electrode, and top electrode and movable electrode come unsettled by pillar, and upper/lower electrode all adopts equal potential belt protection.Movable electrode is unsettled and adopt spring to reach the object of movability as flexible support by pillar.Upper/lower electrode and movable electrode all adopt circular electrode, and each electrode all has signal to draw to be linked in signal circuit.Movable electrode and upper/lower electrode form respectively two differential capacitances, and when detection, a capacitance increases, and another capacitance reduces, and recruitment equals decrease.The signal of each electric capacity is all input in anti-phase summing circuit, and output valve has reflected the variation of electric capacity, has indirectly reflected tested accekeration.
in technique scheme, the whole differential micro capacitor containing equal potential belt is processed on glass substrate, bottom electrode contacts with glass substrate, and movable electrode keeps minimum spacing by pillar and spring and top electrode, and top electrode keeps minimum spacing by pillar and cross beam support and movable electrode.
in technique scheme, in order to ensure the sensitivity of movable electrode, movable electrode adopts spring to support, and need on movable electrode, set up a mass.
in technique scheme, in order to ensure the degree of accuracy of acceleration transducer, it is relative static that top electrode will keep under extraneous impact with bottom electrode.Therefore top electrode adopts thicker and narrower crossbeam to support.Equal potential belt also adopts crossbeam to support, and does not adopt spring.
in technique scheme, except each electrode will be drawn signal, the equal potential belt of upper/lower electrode also will be drawn signal and be ensured that electrode and equal potential belt have same current potential applying after same voltage, thereby greatly reduces edge effect.
in technique scheme, in order to ensure mutually insulated between top electrode, movable electrode, bottom electrode, adopt substrate of glass, and do not adopt the silicon of conductive capability as substrate.
the invention provides a kind of preparation method of the differential micro capacitor for single-shaft precision accelerometer, comprise that step is as follows:
1) clean glass substrate;
2) the one side sputter ground floor Cr/Cu Seed Layer on glass substrate;
3) in ground floor Cr/Cu Seed Layer, get rid of positive photoresist as ground floor photoresist;
4) after drying glue, expose, by exposure, the figure of bottom electrode and the figure of all support pillars containing equal potential belt are transferred on photoresist;
5) develop the figure on photoresist is displayed;
6) electroplate, after plasma water is rinsed well, gold-plated;
7) electroplating on the glass substrate of bottom electrode and pillar positive-glue removing;
8) after drying glue, exposure, development obtain the figure of all pillars, electroplate out the figure of pillar;
9) sputter second layer Cr/Cu Seed Layer, after the good Seed Layer of sputter, then positive-glue removing, this is the 3rd layer photoetching glue;
10) drying glue, exposure imaging obtains the figure of movable electrode and spring, then nickel plating, more gold-plated;
11) electroplate after good and dry thoroughly, then positive-glue removing, this is the 4th layer photoetching glue, then exposes, develops, electroplates and obtain adding thick electrode;
12) electroplate good rear baking thoroughly, then positive-glue removing, this is layer 5 photoresist, then exposes, develops, electroplates the figure that obtains remaining pillar;
13) the 3rd layer of Cr/Cu Seed Layer of sputter, after the good Seed Layer of sputter, then positive-glue removing, this is layer 6 photoresist;
14) drying glue, exposure imaging obtains the figure of top electrode and crossbeam, then nickel plating, more gold-plated;
15) discharge capacitance structure.
in technique scheme, described micro-electric capacity adopts the technology such as photoetching in the MEMS technique of standard, sputter, plating, corrosion to realize.The unsettled employing sacrificial layer technology of movable electrode and top electrode is realized.
in technique scheme, in order to ensure finally can erode sacrifice layer, top electrode and movable electrode have designed the etched hole of some, so that corrosive liquid can, by etched hole and sacrifice layer generation chemical reaction, make movable electrode and top electrode unsettled.
in technique scheme, all electrodes and supporting construction all adopt the plating in MEMS technique to form, and main material is nickel, and electrode surface is electroplated the gold of thin layer, and gold and nickel have good adhesion, and gold is convenient to welding.
the present invention, according to MEMS technique, based on becoming condenser type principle, has designed a kind of differential micro capacitor for single-shaft precision accelerometer as acceleration transducer.When acceleration in the external world exists sensing range, inertial force acts on three electrodes of electric capacity, because upper/lower electrode adopts rigid support, keep relatively static, and movable electrode is owing to adopting flexible support, under inertial force effect, distance that can be mobile small, causes a capacitance in two electric capacity to increase, and a capacitance reduces, signal is input in signal circuit, the size of output valve reflection acceleration.
the differential micro capacitor for single-shaft precision accelerometer that the present invention is above-mentioned, the design of equal potential belt and difference structure has reduced nonlinearity erron greatly, has increased sensitivity.The micro-acceleration gauge of other principles relatively, sensitivity is higher, and resolving power is higher, reproducible, and nonlinearity erron is little.Adapt to rugged environment, and be easy to encapsulation, cost is low.
Brief description of the drawings
fig. 1 is a kind of differential micro capacitor general structure schematic diagram for single-shaft precision accelerometer;
fig. 2 is a kind of structural representation for movable electrode and bottom electrode under the differential micro capacitor of single-shaft precision accelerometer;
fig. 3 is a kind of differential micro capacitor lower electrode arrangement vertical view for single-shaft precision accelerometer.
in figure: 1 top electrode equal potential belt, 2 top electrodes, 3 crossbeams, 4 pads, 5 etched holes, 6 top electrode support columns, 7 add thick electrode (mass), 8 movable electrodes, 9 springs, 10 movable electrode support columns, 11 bottom electrode equal potential belts, 12 bottom electrodes, 13, substrate of glass.
Embodiment
below in conjunction with accompanying drawing, embodiments of the invention are elaborated: the present embodiment, taking technical solution of the present invention as prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
embodiment 1
as Figure 1-3; the present embodiment provides a kind of differential micro capacitor for single-shaft precision accelerometer to comprise top electrode, bottom electrode 12 and movable electrode 8; top electrode and movable electrode 8 are unsettled by top electrode support column 6, movable electrode support column 10, and top electrode, bottom electrode 12 all adopt equal potential belt 1,11 protections.Movable electrode 8 is unsettled and adopt spring 9 to reach the object of movability as flexible support by movable electrode support column 10.Upper/lower electrode and movable electrode 8 all adopt circular electrode, and each electrode is all drawn pad 4,, signal is drawn and is linked in signal circuit.Movable electrode 8 and upper/lower electrode form respectively two differential capacitances, and when detection, a capacitance increases, and another capacitance reduces, and recruitment equals decrease.The signal of each electric capacity is all input in anti-phase summing circuit, and output valve has reflected the variation of electric capacity, has indirectly reflected tested accekeration.
in the present embodiment, described micro-electric capacity is arranged in glass substrate 13, bottom electrode 12 contacts with substrate of glass 13, movable electrode 8 keeps minimum spacing by movable electrode support column 10 and spring 9 and bottom electrode 12, this spacing is less than or equal to 5 μ m, top electrode keeps minimum spacing by top electrode support column 6 and crossbeam 3 and movable electrode 8, changes spacing size and equals the distance between movable electrode 8 and bottom electrode 12.
in the present embodiment, upper/lower electrode and movable electrode 8 all adopt circular electrode, and top electrode and bottom electrode 12 adopt equal potential belt design, and equal potential belt is annulus, surrounds circular electrode, and keep insulation with circular electrode.The width of annulus is greater than the clearance for insulation between equal potential belt and the electrode of twice.
in the present embodiment, in order to ensure the sensitivity of movable electrode, movable electrode adopts spring to support, and need on movable electrode, set up a mass 7.
in the present embodiment, in order to ensure the degree of accuracy of acceleration transducer, it is relative static that top electrode will keep under extraneous impact with bottom electrode.Therefore the crossbeam 3 that top electrode adopts supports, and crossbeam thickness is generally at 30 μ m ~ 50 μ m, and width is approximately 0.5 ~ 1 with the ratio of thickness, ensures that like this crossbeam has larger rigidity at vertical direction.Equal potential belt also adopts crossbeam 3 to support, and does not adopt spring.
in the present embodiment, in order to ensure finally can erode sacrifice layer, top electrode and movable electrode have designed the etched hole 5 of some, so that corrosive liquid can, by etched hole and sacrifice layer generation chemical reaction, make movable electrode 8 and top electrode unsettled.
in the present embodiment, except each electrode will be drawn signal, the equal potential belt 1,11 of upper/lower electrode also will be drawn signal and be ensured that electrode and equal potential belt have same current potential applying after same voltage, thereby greatly reduces edge effect.
in technique scheme, in order to ensure mutually insulated between top electrode, movable electrode, bottom electrode, adopt substrate of glass 13, and do not adopt the silicon of conductive capability as substrate.
embodiment 2
the present embodiment provides a kind of preparation method of the differential micro capacitor for single-shaft precision accelerometer, and its step is as follows:
1) clean the thick glass substrate of 1mm
first clean glass substrate with calcium carbonate powder, after wash clean, clean glass substrate respectively with alkaline cleaning fluid and acid alkalies, then plasma water is rinsed well, is placed in 60 DEG C of baking ovens 1 hour.
) one side sputter ground floor Cr/Cu Seed Layer on glass substrate.
) in ground floor Cr/Cu Seed Layer, get rid of 5 μ m positive photoresist AZ P4620 as ground floor photoresist.
) adopt Karl Suss MA6 double-sided alignment litho machine to expose after drying glue.By exposure, the figure of bottom electrode (containing equal potential belt) and the figure of all support pillars are transferred on photoresist.
) developing displays the figure on photoresist.
) electroplate.In the time that thickness of coating is 4 μ m, after plasma water is rinsed well, is placed in gold plating liquid and electroplates the gold of 1 μ m thickness, so that weld.
) adopt the whirl coating method in step 4, electroplating on the glass substrate of bottom electrode and pillar, get rid of the positive glue of 5 μ m.Whirl coating technique basic parameter is consistent.
) adopting the method in above-mentioned steps after drying glue, exposure, developing obtains the figure of all pillars, electroplates out the figure of pillar.
) adopt the method sputter second layer Cr/Cu Seed Layer in step 2.Technological parameter is the same.After the good Seed Layer of sputter, then get rid of the positive glue AZP4903 of 10 μ m, technological parameter is 1000 rpm × 30s.This is the 3rd layer photoetching glue.
) drying glue, exposure imaging obtains the figure of movable electrode and spring, the same with said method, and development time is slightly long.Then in same electroplating bath, plate 9 μ m nickel, at plating 1 μ m gold.
) electroplate after good and dry thoroughly, then get rid of the positive glue of 30 μ m, the same with above-mentioned whirl coating parameter, this is the 4th layer photoetching glue, then exposes, develops, electroplates and obtain adding thick electrode, object is the quality in order to increase movable electrode.
) electroplate good rear baking thoroughly, then get rid of the positive glue of 5 μ m, the same with above-mentioned whirl coating parameter, this is layer 5 photoresist, then exposes, develops, electroplates the figure that obtains remaining pillar.
) adopt the 3rd layer of Cr/Cu Seed Layer of method sputter in step 2.Technological parameter is the same.After the good Seed Layer of sputter, then get rid of the positive glue AZP4903 of 10 μ m, technological parameter is 1000 rpm × 30s.This is layer 6 photoresist.
) drying glue, exposure imaging obtains the figure of top electrode and crossbeam, the same with said method, and development time is slightly long.Then in same electroplating bath, plate 9 μ m nickel, at plating 1 μ m gold.
) discharge capacitance structure:
the main method that adopts wet etching is removed photoresist and Seed Layer, discharges hanging structure.Method be photoresist discharge liquid and Seed Layer discharge liquid in corrosion back and forth, after the photoresist and Seed Layer corrosion of all exposures, last releasing sacrificial layer, namely hiding photoresist in hanging structure.
the method that discharges photoresist is to clamp slice, thin piece to be placed in acetone soln, repeatedly drags up and down left and right ten times, and whether one deck photoresist topmost that detects by an unaided eye removes, and Seed Layer will be come out.The method that discharges Seed Layer is to adopt hydrogen peroxide-ammoniacal liquor etching liquid to carry out the selective etch liquid of etching copper, retains nickel and gold element when its energy etching copper.Generally according to hydrogen peroxide: ammoniacal liquor: water=1:3:12 proportional arrangement, hydrogen peroxide finally adds, and uses after stirring.The speed of etching copper is very fast, in general a few minutes, completes.Then use acid permanganate soln etching Cr.Releasing sacrificial layer, slice, thin piece is placed in to the sodium hydroxide solution having configured, pass through magnetic agitation, make alkaline etch bath enter into sacrifice layer by the etched hole of top electrode, due to the photoresist between upper/lower electrode need to by etching liquid from power on the etched hole of the utmost point enter, so corrosion rate is extremely slow, need to react for a long time, probably need the reaction time of 10 hours fully to remove.Finally be soaked in acetone soln 20 minutes, natural drying after taking out.
in the present embodiment, differential micro capacitor adopts the technology such as photoetching in the MEMS technique of standard, sputter, plating, corrosion to realize.The unsettled employing sacrificial layer technology of top electrode and movable electrode is realized.
in the present embodiment, described top electrode, movable electrode, bottom electrode, pillar, spring, crossbeam, equal potential belt all adopt plating mode to form.Main plated material is nickel, draws signal for the ease of welding, at the gold of electrode surface plating thin layer, the about 1 μ m of thickness.
although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (4)
1. the differential micro capacitor for single-shaft precision accelerometer, comprise top electrode, movable electrode, bottom electrode, top electrode and movable electrode keep unsettled by pillar and bottom electrode, it is characterized in that: upper/lower electrode all adopts equal potential belt protection, movable electrode by pillar unsettled and adopt spring as flexible support, upper/lower electrode and movable electrode all adopt circular electrode, each electrode all has signal to draw to be linked in signal circuit, movable electrode and upper/lower electrode form respectively two differential capacitances, when detection, a capacitance increases, another capacitance reduces, and recruitment equals decrease,
Described micro-electric capacity is arranged on glass substrate, bottom electrode contacts with glass substrate, movable electrode keeps minimum spacing by pillar and spring and bottom electrode, spacing is less than or equal to 5 μ m, top electrode keeps minimum spacing by pillar and crossbeam and movable electrode, and spacing size equals the distance between movable electrode and bottom electrode;
Described movable electrode is provided with a mass;
Described top electrode adopts cross beam support, and equal potential belt also adopts cross beam support;
The equal potential belt of described top electrode and bottom electrode is annulus, surrounds circular electrode, and keeps insulation with circular electrode, and the width of annulus is greater than the clearance for insulation between equal potential belt and the electrode of twice;
The equal potential belt of described upper/lower electrode is drawn signal and is ensured that electrode and equal potential belt have same current potential applying after same voltage;
Described electrode surface plating layer of gold.
2. a preparation method for the differential micro capacitor for single-shaft precision accelerometer as claimed in claim 1, is characterized in that, comprises the steps:
1) clean glass substrate;
2) the one side sputter ground floor Cr/Cu Seed Layer on glass substrate;
3) in ground floor Cr/Cu Seed Layer, get rid of positive photoresist as ground floor photoresist;
4) after drying glue, expose, by exposure, the figure of bottom electrode and the figure of all support pillars containing equal potential belt are transferred on photoresist;
5) develop the figure on photoresist is displayed;
6) electroplate, after plasma water is rinsed well, gold-plated;
7) electroplating on the glass substrate of bottom electrode and pillar positive-glue removing;
8) after drying glue, exposure, development obtain the figure of all pillars, electroplate out the figure of pillar;
9) sputter second layer Cr/Cu Seed Layer, after the good Seed Layer of sputter, then positive-glue removing, this is the 3rd layer photoetching glue;
10) drying glue, exposure imaging obtains the figure of movable electrode and spring, then nickel plating, more gold-plated;
11) electroplate after good and dry thoroughly, then positive-glue removing, this is the 4th layer photoetching glue, then exposes, develops, electroplates and obtain adding thick electrode;
12) electroplate good rear baking thoroughly, then positive-glue removing, this is layer 5 photoresist, then exposes, develops, electroplates the figure that obtains remaining pillar;
13) the 3rd layer of Cr/Cu Seed Layer of sputter, after the good Seed Layer of sputter, then positive-glue removing, this is layer 6 photoresist;
14) drying glue, exposure imaging obtains the figure of top electrode and crossbeam, then nickel plating, more gold-plated;
15) discharge capacitance structure.
3. the preparation method of the differential micro capacitor for single-shaft precision accelerometer according to claim 2, is characterized in that, described electrode surface plating layer of gold, and thickness is 1 μ m.
4. the preparation method of the differential micro capacitor for single-shaft precision accelerometer according to claim 2, it is characterized in that, described top electrode and movable electrode are provided with the etched hole of some, be convenient to corrosive liquid and can enter into the concurrent biochemical reaction of sacrifice layer, etched hole shape, quantity and the position distribution of top electrode all will be consistent with movable electrode.
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| CN103424567A (en) * | 2013-09-02 | 2013-12-04 | 东南大学 | Capacitive micro-machine wind speed and direction sensor |
| CN103439527B (en) * | 2013-09-02 | 2015-09-09 | 东南大学 | Capacitance type micro mechanical wind speed wind direction sensor |
| US9952252B2 (en) | 2015-05-15 | 2018-04-24 | Invensense, Inc. | Offset rejection electrodes |
| US11231441B2 (en) | 2015-05-15 | 2022-01-25 | Invensense, Inc. | MEMS structure for offset minimization of out-of-plane sensing accelerometers |
| CN106771361B (en) * | 2016-12-15 | 2023-04-25 | 西安邮电大学 | Double-capacitance type micro-mechanical acceleration sensor and temperature self-compensation system based on same |
| DE102017212875A1 (en) | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Micromechanical device and method for producing a micromechanical device |
| CN112472073B (en) * | 2020-11-23 | 2022-05-24 | 四川大学华西医院 | Intelligent waistband |
| CN114839398A (en) * | 2022-04-27 | 2022-08-02 | 东南大学 | Capacitive flexible acceleration sensor and preparation method thereof |
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| CN1477655A (en) * | 2003-06-12 | 2004-02-25 | 上海交通大学 | Floating structure radio-frequency microinductor and its production process |
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| US6196067B1 (en) * | 1998-05-05 | 2001-03-06 | California Institute Of Technology | Silicon micromachined accelerometer/seismometer and method of making the same |
| US6912902B2 (en) * | 2003-03-26 | 2005-07-05 | Honeywell International Inc. | Bending beam accelerometer with differential capacitive pickoff |
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Non-Patent Citations (2)
| Title |
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| Inertial transducer design for manufacturability and performance at Motorola;Jonathan Hammond et al.;《The 12th International Conference on Solid State Sensors,Actuators and Microsystems》;20030612;85-90 * |
| Jonathan Hammond et al..Inertial transducer design for manufacturability and performance at Motorola.《The 12th International Conference on Solid State Sensors,Actuators and Microsystems》.2003,85-90. |
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