CN105439071B - A kind of Electromagnetic Vibrating Sensor and preparation method thereof - Google Patents
A kind of Electromagnetic Vibrating Sensor and preparation method thereof Download PDFInfo
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- CN105439071B CN105439071B CN201510791836.2A CN201510791836A CN105439071B CN 105439071 B CN105439071 B CN 105439071B CN 201510791836 A CN201510791836 A CN 201510791836A CN 105439071 B CN105439071 B CN 105439071B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
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Abstract
The present invention provides a kind of Electromagnetic Vibrating Sensor and preparation method thereof, including：Front sets reeded first silicon base, the second silicon base to form cavity is bonded with first silicon base and adheres to the magnet of the first silicon substrate bottom back side；The first insulating barrier, the first wire coil, the second insulating barrier and the second wire coil are sequentially provided with second silicon base, first wire coil is contacted with second wire coil in the formation of the second insulating barrier of coil inside terminals insertion；The magnet of the first silicon substrate bottom back side and the bottom portion of groove are released to movable structure or second silicon base and first and second insulating barrier in second silicon base, first and second wire coil by deep reaction ion etching and are released to movable structure by deep reaction ion etching.The present invention is under no extraneous alternating magnetic field disturbed condition, and sensor partially, is made, small volume without zero using MEMS technology, is adapted to scale manufacture, and be easy to integrated with signal conditioning circuit.
Description
Technical field
The present invention relates to MEMS and micromachined FIELD OF THE INVENTIONThe, more particularly to a kind of electromagnetic vibration sensing
Device and preparation method thereof.
Background technology
Electromagnetic Vibrating Sensor refers to utilize electromagnetic induction principle, and movement velocity is converted into the induced potential in coil
Output.The work of this sensor does not need additional power source, but directly draws the mechanical energy of testee and be converted into telecommunications
Number output, it is a kind of typical power generation type sensor.
Tradition machinery formula electric and magnetic oscillation sensor puts the parameter transform of Engineering Vibration into mechanical signal, then through mechanical system
After big, measure, record, conventional instrument has lever-type vibrograph and Geiger that vialog.But tradition machinery formula electromagnetism
Vibrating sensor has the shortcomings that volume is big, quality is heavy, is not suitable for scale manufacture, the frequency of measurement is relatively low.In addition, tradition machinery
Formula electric and magnetic oscillation sensor is difficult integrated with its signal conditioning circuit.
In consideration of it, the present invention provides a kind of new a kind of Electromagnetic Vibrating Sensor and preparation method thereof to solve above-mentioned skill
Art problem.
The content of the invention
The shortcoming of prior art, of the invention to provide a kind of Electromagnetic Vibrating Sensor and its preparation side in view of the above
Method, this Electromagnetic Vibrating Sensor is inclined without zero, small volume, it is easy to integrated with signal conditioning circuit, and can be movable by adjustment
The shape and size of part adapt to the detection of different vibration frequencies.
In order to achieve the above objects and other related objects, the present invention provides a kind of Electromagnetic Vibrating Sensor, the vibration
Sensor at least includes：Front sets reeded first silicon base, is bonded to form the second silicon of cavity with first silicon base
Substrate and the magnet for adhering to the first silicon substrate bottom back side；Second silicon base is provided with the first insulating barrier, is arranged at
The first wire coil on first insulating barrier, second be arranged on first insulating barrier and first wire coil are exhausted
Edge layer and the second wire coil on second insulating barrier；First wire coil and second wire coil
Contacted in the formation of the second insulating barrier of coil inside terminals insertion；The magnet of the first silicon substrate bottom back side leads to the bottom portion of groove
Cross deep reaction ion etching be released to movable structure or second silicon base and in second silicon base first,
Two insulating barriers, first and second wire coil are released to movable structure by deep reaction ion etching.
Preferably, first silicon base is flat board or mass.
Preferably, second silicon base is flat board or mass.
The present invention also provides a kind of preparation method of above-mentioned Electromagnetic Vibrating Sensor, and methods described at least includes step
Suddenly：
A) provide the second silicon base and front sets reeded first silicon base, aoxidized in second silicon base front
Form the first insulating barrier；Then the first metal layer is deposited on first insulating barrier；
B) the graphical first layer metal layer, forms the first wire coil；
C) continue to deposit the second insulating barrier for forming covering first wire coil and the first insulating barrier；
D) graphical second insulating barrier, and contact hole is formed above the terminal inside first wire coil,
Electrical connection for first wire coil and second metal layer；
E) deposition forms the second metal of covering contact hole and the second insulating barrier on patterned second insulating barrier
Layer；
F) graphical second metal layer, forms the second wire coil；
G) the second silicon base and first, second wire coil above it are discharged using deep reaction ion etching, makes it
As movable device；
H) structure for setting reeded first silicon base with being obtained after step g) is bonded together to form into cavity, described first
Silicon substrate bottom back side position adhesion magnet corresponding with cavity.
The present invention provides a kind of preparation method of above-mentioned Electromagnetic Vibrating Sensor again, and methods described at least includes step
Suddenly：
A) provide the second silicon base and front sets reeded first silicon base, aoxidized in second silicon base front
Form the first insulating barrier；Then the first metal layer is deposited on first insulating barrier；
B) the graphical first layer metal layer, forms the first wire coil；
C) continue to deposit the second insulating barrier for forming covering first wire coil and the first insulating barrier；
D) graphical second insulating barrier, and contact hole is formed above the terminal inside first wire coil,
Electrical connection for first wire coil and second metal layer；
E) deposition forms the second metal of covering contact hole and the second insulating barrier on patterned second insulating barrier
Layer；
F) graphical second metal layer, forms the second wire coil；
G) bottom portion of groove of first silicon base is discharged using deep reaction ion etching, movable structure is formed, by magnet
Adhere to the movable structure back side；
H) structure obtained after first silicon base and step f) is bonded together to form into cavity.
The Electromagnetic Vibrating Sensor of the present invention is under no extraneous alternating magnetic field disturbed condition, and sensor is inclined without zero, i.e.,
When the external world does not vibrate, output induced-current is zero；The Electromagnetic Vibrating Sensor is made using MEMS technology, small volume,
It is adapted to scale manufacture, and is easy to integrated with signal conditioning circuit；By the movable member for designing Electromagnetic Vibrating Sensor
The parameters such as shape, size, can be designed that the detection suitable for different vibration frequencies.
Brief description of the drawings
Fig. 1 is shown as Electromagnetic Vibrating Sensor schematic three dimensional views of the present invention；
Fig. 2 is shown as the Electromagnetic Vibrating Sensor profile of the embodiment of the present invention one；
Fig. 3 to Figure 10 shows that the electromagnetic vibration of the embodiment of the present invention one senses Making programme figure；
Wherein, Fig. 3 is shown as depositing first insulator layer and the first metal layer schematic diagram on silicon substrate disk；
Fig. 4 is shown as graphical above-mentioned the first metal layer, forms the first wire coil schematic diagram；
Fig. 5 is shown as depositing the second insulating barrier schematic diagram after above-mentioned silicon substrate disk the first wire coil of formation；
Fig. 6 is shown as to above-mentioned second insulating barrier photoetching, etches contact hole, is that the first wire coil and the second layer belong to line
The electrical connection of circle is prepared schematic diagram；
Fig. 7 is shown as depositing second metal layer, and second metal layer forms electricity with the first wire coil at above-mentioned contact hole
Connection, second metal layer and the first wire coil insulation schematic diagram at noncontact hole；
Fig. 8 is shown as graphical above-mentioned second metal layer, the second wire coil is formed, wherein the first wire coil and second
Wire coil forms electrical connection schematic diagram at above-mentioned contact hole；
Fig. 9 is shown as discharging the slab construction where wire coil, becomes movable structure schematic diagram；
Figure 10 is shown as above-mentioned movable structure bonding together to form cavity with reeded silicon base with another, and in silicon
Substrate back adheres to magnet schematic diagram.
Figure 11 is shown as another embodiment of the present invention and discharges a silicon chip with cavity by deep reaction ion etching, makes
It turns into movable structure schematic diagram.
Figure 12 is shown as the silicon chip with movable structure in Figure 11 being bonded with the silicon chip substrate of two layers of coil of band in Fig. 8,
And magnet is sticked into movable structure schematic rear view.
Component label instructions
11st, 11 ' first and second silicon base
12 first insulating barriers
13 the first metal layers
14 first wire coils
15 second insulating barriers
16 the first metal layers are electrically connected with second metal layer
17 second metal layers
18 second wire coils
19 structure releases
20 magnet
21 cavitys
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to shown in accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, then in schema only display with relevant component in the present invention rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
Refer to shown in Fig. 1 and Fig. 2, the present invention provides a kind of Electromagnetic Vibrating Sensor, and the vibrating sensor is at least
Including：Front sets reeded first silicon base 11, is bonded to form the second silicon base 11 ' of cavity 21 with first silicon base
And adhere to the magnet 20 at the back side of the first silicon base 11；Second silicon base 11 ' is provided with the first insulating barrier 12, set
The first wire coil 14 for being placed on first insulating barrier 12, it is arranged at first insulating barrier 12 and first wire coil
The second insulating barrier 15 on 14 and the second wire coil 18 on second insulating barrier 15；First wire coil
14 contact 16 with second wire coil 18 in the formation of the second insulating barrier of coil inside terminals insertion；First silicon base 11
The magnet 20 at the back side is released to movable structure or second silicon base with the bottom portion of groove by deep reaction ion etching
11 ' and the wire coil 14,18 of first and second insulating barrier 12,15, first and second in second silicon base pass through deep reaction
Ion etching is released to movable structure.The material of first, second wire coil is aluminium, copper or gold.
In the present embodiment, first silicon base is flat board or mass.Second silicon base can also for flat board or
Mass.The detection frequency of the detection frequency specific mass block structure of slab construction is high, but detection frequency is more than by flat board or matter
Gauge block determines that the technical field belongs to the common knowledge of this area, will not be repeated here.
For summarizing, wire coil structure is on flat board or mass block structure in the embodiment of the present invention one；Pass through depth
Reactive ion etching discharges flat board or mass, becomes movable structure, when extraneous vibration causes movable structure to move, fortune
Dynamic wire coil cutting magnetic induction line produces induced-current, by detecting electric current so as to detect the vibration in the external world；Magnet is adhered to
Outside the movable structure.
Magnet is on flat board or mass block structure in the embodiment of the present invention two；Flat board is discharged by deep reaction ion etching
Or mass, movable structure is become, when extraneous vibration causes movable structure to move, magnetic field and the wire coil of motion are made
With electric current is produced, by detecting electric current so as to detect the vibration in the external world；Wire coil structure is located at outside the movable structure.
Embodiment one
Refer to the electromagnetic vibration of the embodiment one sensing Making programme figure shown in accompanying drawing 3 to accompanying drawing 10；The present invention is provided
A kind of preparation method of Electromagnetic Vibrating Sensor, the making of the Electromagnetic Vibrating Sensor at least includes step：
The present embodiment provides a kind of preparation method of Electromagnetic Vibrating Sensor, at least comprises the following steps：
1) a substrate A pieces are provided, its material uses silicon, the first layer insulating and first layer metal are deposited on a silicon substrate
Layer, as shown in Figure 3；
2) to A piece gluings, photoetching, corrosion first layer metal layer forms first layer metal coil, removed photoresist, as shown in Figure 4；
3) the second layer insulating is deposited to A pieces, as shown in Figure 5；
4) to A piece gluings, photoetching, etching of second layer insulating barrier, formed for connecing that first layer metal coil is electrically connected
Contact hole, removes photoresist, as shown in Figure 6；
5) second layer metal layer is deposited to A pieces, at above-mentioned contact hole, second layer metal layer and first layer metal coil shape
Into electrical connection, as shown in Figure 7；
6) to A piece gluings, photoetching, corrosion second layer metal layer forms second layer metal coil, removed photoresist, as shown in Figure 8；
7) to A piece gluings, photoetching corrodes first layer and the second layer insulating and discharges knot using deep reaction ion etching
Structure, makes to turn into movable structure with coil, as shown in Figure 9；
8) A pieces are bonded with another substrate B piece with cavity, and magnet is sticked into the B pieces back side, such as Figure 10 institutes
Show.
Embodiment two
The present embodiment provides a kind of preparation method of Electromagnetic Vibrating Sensor, at least comprises the following steps：
1) a substrate A pieces are provided, its material uses silicon, the first layer insulating and first layer metal are deposited on a silicon substrate
Layer；
2) to A piece gluings, photoetching, corrosion first layer metal layer forms first layer metal coil, removed photoresist,；
3) the second layer insulating is deposited to A pieces；
4) to A piece gluings, photoetching, etching of second layer insulating barrier, formed for connecing that first layer metal coil is electrically connected
Contact hole, removes photoresist；
5) second layer metal layer is deposited to A pieces, at above-mentioned contact hole, second layer metal layer and first layer metal coil shape
Into electrical connection；
6) to A piece gluings, photoetching, corrosion second layer metal layer forms second layer metal coil, removed photoresist；
7) another substrate B pieces with cavity are taken, B pieces are aoxidized, gluing, photoetching is simultaneously discharged using deep reaction ion etching
Structure makes it movable, removes photoresist, oxide layer, as shown in figure 11；
8) A pieces are bonded with B pieces, and magnet is adhered to and the movable structure B back sides, as shown in figure 12.
In summary, the present invention provides a kind of Electromagnetic Vibrating Sensor and preparation method thereof.The electromagnetic type of the present invention is shaken
Dynamic sensor is under no extraneous alternating magnetic field disturbed condition, and without zero partially, i.e., when the external world does not vibrate, output senses sensor
Electric current is zero；The Electromagnetic Vibrating Sensor is made using MEMS technology, small volume, is adapted to scale manufacture, and be easy to and believe
Number modulate circuit is integrated；By parameters such as shape, the sizes of the movable member that design Electromagnetic Vibrating Sensor, it can be designed that
Suitable for the detection of different vibration frequencies.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (7)
1. Electromagnetic Vibrating Sensor, it is characterised in that the vibrating sensor at least includes：Front sets reeded first silicon
Substrate, it is bonded the second silicon base to form cavity with first silicon base and adheres to the magnetic of the first silicon substrate bottom back side
Iron；Second silicon base is provided with the first insulating barrier, the first wire coil being arranged on first insulating barrier, is arranged at institute
State the first insulating barrier and the second insulating barrier on first wire coil and the second gold medal on second insulating barrier
Belong to coil；First wire coil connects with second wire coil in the formation of the second insulating barrier of coil inside terminals insertion
Touch；The magnet of the first silicon substrate bottom back side and the bottom portion of groove by deep reaction ion etching be released to movable structure or
Second silicon base and first and second insulating barrier, first and second wire coil in second silicon base pass through deep reaction
Ion etching is released to movable structure.
2. Electromagnetic Vibrating Sensor according to claim 1, it is characterised in that first silicon base is flat board.
3. Electromagnetic Vibrating Sensor according to claim 1, it is characterised in that second silicon base is flat board.
4. the preparation method of the Electromagnetic Vibrating Sensor described in a kind of claim 1, it is characterised in that methods described is at least wrapped
Include step：
A) provide the second silicon base and front sets reeded first silicon base, formed in the oxidation of second silicon base front
First insulating barrier；Then the first metal layer is deposited on first insulating barrier；
B) the graphical first layer metal layer, forms the first wire coil；
C) continue to deposit the second insulating barrier for forming covering first wire coil and the first insulating barrier；
D) graphical second insulating barrier, and form contact hole above the terminal inside first wire coil, is used for
The electrical connection of first wire coil and second metal layer；
E) deposition forms the second metal layer of covering contact hole and the second insulating barrier on patterned second insulating barrier；
F) graphical second metal layer, forms the second wire coil；
G) the second silicon base and first, second wire coil above it are discharged using deep reaction ion etching, become
Movable device；
H) structure for setting reeded first silicon base with being obtained after step g) is bonded together to form into cavity, in first silicon substrate
Bottom back side position adhesion magnet corresponding with cavity.
5. the preparation method of the Electromagnetic Vibrating Sensor described in a kind of claim 1, it is characterised in that methods described is at least wrapped
Include step：
A) provide the second silicon base and front sets reeded first silicon base, formed in the oxidation of second silicon base front
First insulating barrier；Then the first metal layer is deposited on first insulating barrier；
B) the graphical first layer metal layer, forms the first wire coil；
C) continue to deposit the second insulating barrier for forming covering first wire coil and the first insulating barrier；
D) graphical second insulating barrier, and form contact hole above the terminal inside first wire coil, is used for
The electrical connection of first wire coil and second metal layer；
E) deposition forms the second metal layer of covering contact hole and the second insulating barrier on patterned second insulating barrier；
F) graphical second metal layer, forms the second wire coil；
G) bottom portion of groove of first silicon base is discharged using deep reaction ion etching, movable structure is formed, magnet is adhered to
In the movable structure back side；
H) structure obtained after first silicon base and step f) is bonded together to form into cavity.
6. the preparation method of the Electromagnetic Vibrating Sensor according to claim 4 or 5, it is characterised in that described first,
The material of two insulating barriers is silica.
7. the preparation method of the Electromagnetic Vibrating Sensor according to claim 4 or 5, it is characterised in that described first,
The material of two wire coils is aluminium, copper or gold.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111076805A (en) * | 2019-12-18 | 2020-04-28 | 天津大学 | Full-flexible electromagnetic vibration sensor based on folding film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110415966B (en) * | 2019-07-30 | 2024-03-12 | 新纳传感系统有限公司 | Coil and manufacturing method thereof |
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| JP2011180001A (en) * | 2010-03-02 | 2011-09-15 | Denso Corp | Rotation sensor |
| CN102064736B (en) * | 2010-12-08 | 2012-12-12 | 重庆大学 | Composite micro wind turbine generator |
| CN102176637B (en) * | 2011-01-25 | 2013-11-13 | 中国科学院上海微系统与信息技术研究所 | Miniature electromagnetic type vibration energy collector and manufacturing method thereof |
| US8723343B2 (en) * | 2011-03-14 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensor with energy-harvesting device |
| CN102680917B (en) * | 2012-04-28 | 2014-09-17 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical magnetic field sensor and preparation method thereof |
| CN103475183B (en) * | 2013-09-30 | 2015-10-28 | 安徽大学 | Manufacturing method of composite micro energy collector based on MEMS (micro-electromechanical systems) process |
| CN104374467A (en) * | 2014-11-19 | 2015-02-25 | 常州市静远噪声控制材料有限公司 | Magnetoelectric vibration measuring sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111076805A (en) * | 2019-12-18 | 2020-04-28 | 天津大学 | Full-flexible electromagnetic vibration sensor based on folding film |
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