CN102668370B - 具有应变引发的频率控制的太赫兹振荡器 - Google Patents

具有应变引发的频率控制的太赫兹振荡器 Download PDF

Info

Publication number
CN102668370B
CN102668370B CN201080058933.6A CN201080058933A CN102668370B CN 102668370 B CN102668370 B CN 102668370B CN 201080058933 A CN201080058933 A CN 201080058933A CN 102668370 B CN102668370 B CN 102668370B
Authority
CN
China
Prior art keywords
active layer
strain
stress
rtd
generation unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080058933.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102668370A (zh
Inventor
小山泰史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102668370A publication Critical patent/CN102668370A/zh
Application granted granted Critical
Publication of CN102668370B publication Critical patent/CN102668370B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Waveguide Aerials (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
CN201080058933.6A 2009-12-25 2010-12-10 具有应变引发的频率控制的太赫兹振荡器 Expired - Fee Related CN102668370B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-295443 2009-12-25
JP2009295443A JP5606061B2 (ja) 2009-12-25 2009-12-25 発振素子
PCT/JP2010/072729 WO2011078064A1 (en) 2009-12-25 2010-12-10 Terahertz oscillator with strain induced frequency control

Publications (2)

Publication Number Publication Date
CN102668370A CN102668370A (zh) 2012-09-12
CN102668370B true CN102668370B (zh) 2015-01-21

Family

ID=43827962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080058933.6A Expired - Fee Related CN102668370B (zh) 2009-12-25 2010-12-10 具有应变引发的频率控制的太赫兹振荡器

Country Status (4)

Country Link
US (1) US8779866B2 (enExample)
JP (1) JP5606061B2 (enExample)
CN (1) CN102668370B (enExample)
WO (1) WO2011078064A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010127709A1 (en) * 2009-05-08 2010-11-11 Telefonaktiebolaget L M Ericsson (Publ) A transition from a chip to a waveguide port
KR101928438B1 (ko) 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
KR101700779B1 (ko) * 2012-09-21 2017-01-31 한국전자통신연구원 포토믹서 및 그의 제조방법
US9000833B2 (en) * 2013-03-06 2015-04-07 Silicon Laboratories Inc. Compensation of changes in MEMS capacitive transduction
US9419583B2 (en) 2013-04-22 2016-08-16 Northeastern University Nano- and micro-electromechanical resonators
US9425765B2 (en) 2013-04-22 2016-08-23 Northeastern University Nano- and micro-electromechanical resonators
US9489000B2 (en) 2013-09-30 2016-11-08 Silicon Laboratories Inc. Use of a thermistor within a reference signal generator
US10680553B2 (en) 2014-02-07 2020-06-09 Cornell University Scalable terahertz phased array and method
CN103762416B (zh) * 2014-02-25 2016-12-07 中国工程物理研究院电子工程研究所 一种太赫兹波片载-波导-喇叭转换天线
US10254176B2 (en) 2014-04-07 2019-04-09 Silicon Laboratories Inc. Strain-insensitive temperature sensor
CN104506167B (zh) * 2014-12-01 2017-04-05 东南大学 一种基于固态电子的太赫兹电脉冲产生装置
FR3033103A1 (fr) * 2015-02-24 2016-08-26 Univ Paris Diderot Paris 7 Dispositif resonateur electrique tridimensionnel de type inductance-capacite
FR3035499A1 (fr) 2015-04-21 2016-10-28 St Microelectronics Sa Imageur terahertz en champ proche
JP6921482B2 (ja) * 2015-05-22 2021-08-18 キヤノン株式会社 素子、これを有する発振器及び情報取得装置
CN105811883B (zh) * 2016-02-29 2018-08-24 天津大学 一种采用硅基cmos工艺实现的太赫兹振荡器
US9989927B1 (en) 2016-11-30 2018-06-05 Silicon Laboratories Inc. Resistance-to-frequency converter
CN111066239B (zh) * 2017-08-31 2023-11-07 罗姆股份有限公司 太赫兹波检测器和太赫兹单元
TWI638452B (zh) * 2017-12-22 2018-10-11 林嘉洤 Room temperature oscillator
KR102133634B1 (ko) * 2018-04-23 2020-07-13 한양대학교 산학협력단 무선 전력 전송 장치
JP7186796B2 (ja) * 2018-10-30 2022-12-09 パイオニア株式会社 電磁波発生装置及び電磁波発生システム
CN110504354A (zh) * 2019-07-16 2019-11-26 电子科技大学 基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法
JP7395281B2 (ja) 2019-08-23 2023-12-11 キヤノン株式会社 素子
JP7317653B2 (ja) * 2019-09-24 2023-07-31 キヤノン株式会社 素子
JP7574052B2 (ja) * 2020-10-29 2024-10-28 キヤノン株式会社 発振器
WO2023063913A2 (en) * 2021-10-14 2023-04-20 Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ Microbolometer detector with adjustable spectral reactivity

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935935A (en) * 1988-08-31 1990-06-19 Carnegie Mellon University Wavelength tunable electronic and electrooptical semiconductor devices
US20060214176A1 (en) * 2005-03-28 2006-09-28 Canon Kabushiki Kaisha Device for generating or detecting electromagnetic radiation, and fabrication method of the same
CN101151797A (zh) * 2005-03-28 2008-03-26 佳能株式会社 频率可调振荡器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291029B (de) * 1963-02-21 1969-03-20 Siemens Ag Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
JP2007124250A (ja) 2005-10-27 2007-05-17 Tokyo Institute Of Technology テラヘルツ発振素子
US7839226B2 (en) * 2006-07-18 2010-11-23 Raytheon Company Method and apparatus for effecting stable operation of resonant tunneling diodes
US7830926B1 (en) * 2006-11-13 2010-11-09 Kim Matthew H Tunable device, method of manufacture, and method of tuning a laser
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
JP2009295443A (ja) 2008-06-05 2009-12-17 Toshiba Home Technology Corp 誘導コイル及び電磁誘導加熱装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935935A (en) * 1988-08-31 1990-06-19 Carnegie Mellon University Wavelength tunable electronic and electrooptical semiconductor devices
US20060214176A1 (en) * 2005-03-28 2006-09-28 Canon Kabushiki Kaisha Device for generating or detecting electromagnetic radiation, and fabrication method of the same
CN101151797A (zh) * 2005-03-28 2008-03-26 佳能株式会社 频率可调振荡器

Also Published As

Publication number Publication date
US8779866B2 (en) 2014-07-15
WO2011078064A1 (en) 2011-06-30
WO2011078064A4 (en) 2011-09-01
JP5606061B2 (ja) 2014-10-15
CN102668370A (zh) 2012-09-12
US20120274410A1 (en) 2012-11-01
JP2011135006A (ja) 2011-07-07

Similar Documents

Publication Publication Date Title
CN102668370B (zh) 具有应变引发的频率控制的太赫兹振荡器
US5023503A (en) Super high frequency oscillator/resonator
EP3501105B1 (en) Surface acoustic wave rfid sensor for material and structure sensing
JP4977048B2 (ja) アンテナ素子
JP6099114B2 (ja) 無線伝送装置
US7898348B2 (en) Terahertz oscillation device
US10425040B2 (en) Balanced unilateral frequency quadrupler
WO2016092886A1 (ja) テラヘルツ素子およびその製造方法
Ito et al. InP-based planar-antenna-integrated Schottky-barrier diode for millimeter-and sub-millimeter-wave detection
EP2973844A1 (en) Waveguide element
JP2014158254A (ja) 電磁波発生素子及び検出素子
JP2018017684A (ja) テラヘルツ分光器およびテラヘルツセンシングシステム
JP5958890B2 (ja) テラヘルツ検出素子
JP2012217107A (ja) テラヘルツ発振検出素子
JP2013236326A (ja) 発振素子、受信素子、及び測定装置
JP5746526B2 (ja) テラヘルツ無線通信方式
Mansoorzare et al. Micromachined heterostructured lamb mode waveguides for acoustoelectric signal processing
Bahamonde et al. A reconfigurable surface acoustic wave filter on ZnO/AlGaN/GaN heterostructure
JP6099190B2 (ja) 溶液検査装置
JP2012215530A (ja) 透過型テラヘルツ波検査装置
JP5417199B2 (ja) 発振素子
US20250030426A1 (en) Antenna apparatus, communication apparatus, and image capturing system
CN102569369A (zh) 随机噪声源
WO2025128892A1 (en) Quantum microwave-to-optical transducer and associated methods
JP2013096615A (ja) 相変化検出装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150121

Termination date: 20161210