JP5606061B2 - 発振素子 - Google Patents

発振素子 Download PDF

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Publication number
JP5606061B2
JP5606061B2 JP2009295443A JP2009295443A JP5606061B2 JP 5606061 B2 JP5606061 B2 JP 5606061B2 JP 2009295443 A JP2009295443 A JP 2009295443A JP 2009295443 A JP2009295443 A JP 2009295443A JP 5606061 B2 JP5606061 B2 JP 5606061B2
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JP
Japan
Prior art keywords
active layer
stress
oscillation
unit
strain
Prior art date
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Expired - Fee Related
Application number
JP2009295443A
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English (en)
Japanese (ja)
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JP2011135006A5 (enExample
JP2011135006A (ja
Inventor
泰史 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009295443A priority Critical patent/JP5606061B2/ja
Priority to CN201080058933.6A priority patent/CN102668370B/zh
Priority to PCT/JP2010/072729 priority patent/WO2011078064A1/en
Priority to US13/517,361 priority patent/US8779866B2/en
Publication of JP2011135006A publication Critical patent/JP2011135006A/ja
Publication of JP2011135006A5 publication Critical patent/JP2011135006A5/ja
Application granted granted Critical
Publication of JP5606061B2 publication Critical patent/JP5606061B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Waveguide Aerials (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP2009295443A 2009-12-25 2009-12-25 発振素子 Expired - Fee Related JP5606061B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009295443A JP5606061B2 (ja) 2009-12-25 2009-12-25 発振素子
CN201080058933.6A CN102668370B (zh) 2009-12-25 2010-12-10 具有应变引发的频率控制的太赫兹振荡器
PCT/JP2010/072729 WO2011078064A1 (en) 2009-12-25 2010-12-10 Terahertz oscillator with strain induced frequency control
US13/517,361 US8779866B2 (en) 2009-12-25 2010-12-10 Oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009295443A JP5606061B2 (ja) 2009-12-25 2009-12-25 発振素子

Publications (3)

Publication Number Publication Date
JP2011135006A JP2011135006A (ja) 2011-07-07
JP2011135006A5 JP2011135006A5 (enExample) 2013-02-14
JP5606061B2 true JP5606061B2 (ja) 2014-10-15

Family

ID=43827962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009295443A Expired - Fee Related JP5606061B2 (ja) 2009-12-25 2009-12-25 発振素子

Country Status (4)

Country Link
US (1) US8779866B2 (enExample)
JP (1) JP5606061B2 (enExample)
CN (1) CN102668370B (enExample)
WO (1) WO2011078064A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010127709A1 (en) * 2009-05-08 2010-11-11 Telefonaktiebolaget L M Ericsson (Publ) A transition from a chip to a waveguide port
KR101928438B1 (ko) 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
KR101700779B1 (ko) * 2012-09-21 2017-01-31 한국전자통신연구원 포토믹서 및 그의 제조방법
US9000833B2 (en) * 2013-03-06 2015-04-07 Silicon Laboratories Inc. Compensation of changes in MEMS capacitive transduction
US9419583B2 (en) 2013-04-22 2016-08-16 Northeastern University Nano- and micro-electromechanical resonators
US9425765B2 (en) 2013-04-22 2016-08-23 Northeastern University Nano- and micro-electromechanical resonators
US9489000B2 (en) 2013-09-30 2016-11-08 Silicon Laboratories Inc. Use of a thermistor within a reference signal generator
US10680553B2 (en) 2014-02-07 2020-06-09 Cornell University Scalable terahertz phased array and method
CN103762416B (zh) * 2014-02-25 2016-12-07 中国工程物理研究院电子工程研究所 一种太赫兹波片载-波导-喇叭转换天线
US10254176B2 (en) 2014-04-07 2019-04-09 Silicon Laboratories Inc. Strain-insensitive temperature sensor
CN104506167B (zh) * 2014-12-01 2017-04-05 东南大学 一种基于固态电子的太赫兹电脉冲产生装置
FR3033103A1 (fr) * 2015-02-24 2016-08-26 Univ Paris Diderot Paris 7 Dispositif resonateur electrique tridimensionnel de type inductance-capacite
FR3035499A1 (fr) 2015-04-21 2016-10-28 St Microelectronics Sa Imageur terahertz en champ proche
JP6921482B2 (ja) * 2015-05-22 2021-08-18 キヤノン株式会社 素子、これを有する発振器及び情報取得装置
CN105811883B (zh) * 2016-02-29 2018-08-24 天津大学 一种采用硅基cmos工艺实现的太赫兹振荡器
US9989927B1 (en) 2016-11-30 2018-06-05 Silicon Laboratories Inc. Resistance-to-frequency converter
CN111066239B (zh) * 2017-08-31 2023-11-07 罗姆股份有限公司 太赫兹波检测器和太赫兹单元
TWI638452B (zh) * 2017-12-22 2018-10-11 林嘉洤 Room temperature oscillator
KR102133634B1 (ko) * 2018-04-23 2020-07-13 한양대학교 산학협력단 무선 전력 전송 장치
JP7186796B2 (ja) * 2018-10-30 2022-12-09 パイオニア株式会社 電磁波発生装置及び電磁波発生システム
CN110504354A (zh) * 2019-07-16 2019-11-26 电子科技大学 基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法
JP7395281B2 (ja) 2019-08-23 2023-12-11 キヤノン株式会社 素子
JP7317653B2 (ja) * 2019-09-24 2023-07-31 キヤノン株式会社 素子
JP7574052B2 (ja) * 2020-10-29 2024-10-28 キヤノン株式会社 発振器
WO2023063913A2 (en) * 2021-10-14 2023-04-20 Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ Microbolometer detector with adjustable spectral reactivity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291029B (de) * 1963-02-21 1969-03-20 Siemens Ag Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
US4935935A (en) * 1988-08-31 1990-06-19 Carnegie Mellon University Wavelength tunable electronic and electrooptical semiconductor devices
JP4390147B2 (ja) 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4250603B2 (ja) * 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP2007124250A (ja) 2005-10-27 2007-05-17 Tokyo Institute Of Technology テラヘルツ発振素子
US7839226B2 (en) * 2006-07-18 2010-11-23 Raytheon Company Method and apparatus for effecting stable operation of resonant tunneling diodes
US7830926B1 (en) * 2006-11-13 2010-11-09 Kim Matthew H Tunable device, method of manufacture, and method of tuning a laser
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
JP2009295443A (ja) 2008-06-05 2009-12-17 Toshiba Home Technology Corp 誘導コイル及び電磁誘導加熱装置

Also Published As

Publication number Publication date
US8779866B2 (en) 2014-07-15
WO2011078064A1 (en) 2011-06-30
WO2011078064A4 (en) 2011-09-01
CN102668370B (zh) 2015-01-21
CN102668370A (zh) 2012-09-12
US20120274410A1 (en) 2012-11-01
JP2011135006A (ja) 2011-07-07

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