CN102645623A - Test handler - Google Patents
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- CN102645623A CN102645623A CN2012100415706A CN201210041570A CN102645623A CN 102645623 A CN102645623 A CN 102645623A CN 2012100415706 A CN2012100415706 A CN 2012100415706A CN 201210041570 A CN201210041570 A CN 201210041570A CN 102645623 A CN102645623 A CN 102645623A
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- injection orifice
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to a temperature control unit applied in a test handler. The temperature control unit comprises a pipeline having an entry through which temperature control gas is introduced into the inner space of the pipeline; M injection holes formed on the front of the pipeline so as to inject temperature control gas in the inner space of the pipeline, wherein, M is a natural number larger than L, L is a natural number larger than 1, and K injection holes are respectively formed on positions corresponding to K through holes on a match board plate, K is a natural number equal to or smaller than L and K through holes are spaced in an equidistant way; and an injection hole switching device for optically closing or opening the rest M-K injection holes except the K injections holes corresponding to K through holes; and a temperature controller equipped in a way to supply the temperature control gas to the inner space through the entry of the pipeline.
Description
Technical field
The present invention relates to Test handler, relate in particular to Test handler with the temperature control unit that is used to control the semiconductor device temperature.
Background technology
Before transportation, through tester the finished product semiconductor device is tested, wherein, Test handler is used as the equipment that the semiconductor device of treating to be electrically connected with tester is carried.
Test handler comprises the test chamber that is arranged on the part place that treats to connect with tester, wherein when test pallet is arranged in test chamber, carries out the test that is loaded in the semiconductor device in the test pallet.
Usually; As being entitled as in the 10-2005-0055685 korean unexamined patent Shen Qing Publication (after this being called " pertinent literature 1 ") of " TEST HANDLER (Test handler) " disclosedly, the semiconductor device that is positioned on the test pallet of test chamber is pushed and is electrically connected with tester towards tester by match plate 163c.As the 10-2008-0086320 korean unexamined patent Shen Qing Publication (after this being called " pertinent literature 2 ") that is entitled as " PUSHER FOR MATCH PLATE OF TEST HANDLER (pusher that is used for the match plate of Test handler) " is disclosed; Match plate comprises pusher, and the quantity of pusher is identical with the quantity of semiconductor device on being loaded in test pallet.Pusher is used to the semiconductor device that contacts and promote to treat to be electrically connected with tester.
Because semiconductor device possibly be used under the various environment, particularly under the ultimate temperature environment, so semiconductor device need be tested under thermal stress (such as high temperature and low temperature) is applied to the condition of the semiconductor device in the test chamber.The desired solution that obtains testing reliability is to carry out test being loaded under the condition that all semiconductor devices on the test pallet all are in uniform temp.
Yet, be configured to temperature pilot-gas (such as hot gas or cold air) directly is supplied in the test chamber owing to have Test handler now, so between the semiconductor device that is loaded on the test pallet, certainly exist temperature difference through a side of test chamber.
Therefore, as disclosed in the pertinent literature 1, pipeline 163b directly is supplied to each semiconductor device that is loaded on the test pallet with the temperature pilot-gas from temperature control unit.In addition; As disclosed in the pertinent literature 2; Developed the technology of a kind of formation through hole (" air hole " in the pertinent literature 2); Gas passes pusher in through hole, feasible temperature pilot-gas of supplying from the injection orifice (" discharge orifice " of pertinent literature 1) of pipeline is passed pusher and flowed to the semiconductor device that is pushed that is positioned at pusher the place ahead.
Along with the appearance of pertinent literature 1 and 2, the temperature pilot-gas directly is supplied to each semiconductor device, thereby can significantly reduce the temperature difference between the semiconductor device in the test chamber.
Meanwhile, be changed, so the test pattern of Test handler also needs to change often owing to be used for the standard of semiconductor device to be tested.
For example, typical semiconductor device to be tested is provided with ten electric contact terminals.Yet; If the semiconductor device of new standard comprises 20 electric contact terminals; Then because the limited capacity of the tester that electrically contacts with semiconductor device; Must change the Hi-Fix plate, promptly have the interface board of the test socket that the electric contact terminal with semiconductor device electrically contacts and the match plate of tester.
That is to say; Before test 16 semiconductor devices with ten electric contact terminals and test had now under the situation of semiconductor device of 20 contact terminals at once; Only eight semiconductor devices can be electrically connected, because tester only has 160 electric connection lines (as a reference, in order to simplify description; Once the quantity of the semiconductor device of test is used at this and is significantly reduced, but in fact once test 256,512 or several thousand semiconductor devices).
In this case; As side shown in Figure 1 of Test handler be shown, with the form of 4 * 4 matrixes be loaded on the test pallet TT 16 semiconductor devices (each has ten electric contact terminals) all with the Hi-Fix plate that is arranged in tester TESTER on test socket TS electrically contact.
Yet; Because only the semiconductor device with 20 electric contact terminals of eight new standards can be electrically connected; So test must be performed as the semiconductor device D that at first makes on the odd column (for example, the first and the 3rd row) and be electrically connected to tester TESTER, shown in Fig. 2 A; Make then test pallet TT move be loaded in test pallet TT on the same long distance in the row gap of semiconductor device D; Thereby be electrically connected to semiconductor device D on the even column (for example, the second and the 4th row) for test, shown in Fig. 2 B.As a reference, previous test pattern is called as 16para x 1 pacing examination, and a back test pattern is called as 8para x 2 pacings examination.Occasionally, can convert 4para x 4 pacings examination into from above-mentioned test pattern.
This conversion for test pattern; The number needs that is installed on test socket on the Hi-Fix plate of tester, that wait to be electrically connected to semiconductor device will become 8 from 16, and the semiconductor device that promotes to be loaded on the test pallet also need become 8 from 16 with the quantity of the pusher that is electrically connected with test socket.In addition, the installation site of test socket and pusher also can be changed.When 8para x2 pacing examination becomes 16para x1 pacing examination, also need these changes.
As stated; Owing to when pipeline is controlled the temperature of semiconductor device, must change the quantity that is formed at ducted injection orifice; And when the layout of test socket is changed, also must change the position of injection orifice, need to change so be formed with the position of injection orifice on pipeline or the pipe section.
Summary of the invention
According to mentioned above, the present invention provides a kind of Test handler, also need not to be replaced under the situation that test pattern changes even wherein be formed with the pipeline or the pipe section of injection orifice.
According to a first aspect of the invention, a kind of Test handler is provided, it comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make L the semiconductor device that is loaded on the test pallet under required temperature conditions, to test;
Match plate; Be arranged in the test chamber; When test pallet is contained in the test chamber; Match plate promotes to be loaded in K semiconductor device on the test pallet and K semiconductor device is electrically connected with tester towards tester, and match plate is formed with and is loaded in K semiconductor device K the through hole one to one on the test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the semiconductor device on the test pallet under the required temperature conditions;
Wherein, temperature control unit comprises:
Pipeline comprises: inlet, through the inner space of inlet with temperature pilot-gas introduction pipe; M injection orifice is formed on the front side of pipeline the temperature pilot-gas that is introduced into the inner space with injection, and wherein, K injection orifice in M injection orifice is formed at and K the corresponding position of through hole, and M is the natural number greater than L; And
Temperature controller is set to through the inlet of pipeline the temperature pilot-gas is supplied to the inner space.
According to a second aspect of the invention, a kind of Test handler is provided, it comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make L the semiconductor device that is loaded on the test pallet under required temperature conditions, to test;
Match plate; Be arranged in the test chamber; When test pallet is contained in the test chamber; Match plate promotes to be loaded in K semiconductor device on the test pallet and K semiconductor device is electrically connected with tester towards tester, and match plate is formed with and is loaded in K semiconductor device K the through hole one to one on the test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the semiconductor device on the test pallet under the required temperature conditions;
Wherein, temperature control unit comprises:
Pipeline comprises: inlet, through the inner space of inlet with temperature pilot-gas introduction pipe; M injection orifice; Be formed on the front side of pipeline the temperature pilot-gas that is introduced into the inner space with injection; Wherein K injection orifice in M injection orifice is formed at respectively and K the corresponding position of through hole, and wherein the spacing of K through hole is identical, and M is the natural number greater than L;
The injection orifice shutter, its close selectively or open remove with K the corresponding K of a through hole injection orifice outside residue M-K injection orifice; And
Temperature controller is set to through the inlet of pipeline the temperature pilot-gas is supplied to the inner space.
In Test handler, when M equaled L, the injection orifice shutter comprised:
The shutter plate is attached to the front side of pipeline and has N the through hole that supplies the temperature pilot-gas to pass, and N is the natural number greater than M; And
Fixed part is fixed to the shutter plate primary importance or is different from the second place of primary importance,
Wherein, when the shutter plate was fixed to primary importance, M injection orifice all was opened, and when the shutter plate was fixed to the second place, the only N-M injection orifice in M injection orifice was opened selectively.
In Test handler, as M during greater than L, the injection orifice shutter comprises:
The shutter plate is attached to the front side of pipeline and has L the through hole that supplies the temperature pilot-gas to pass; And
Fixed part, with the shutter plate be fixed to primary importance or with the isolated second place of primary importance,
Wherein, when the shutter plate was fixed to primary importance, the only L injection orifice in M injection orifice was opened, and when the shutter plate was fixed to the second place, the only M-L injection orifice in M injection orifice was opened selectively.
In Test handler, as M during greater than L, the injection orifice shutter comprises:
The shutter plate is attached to the front side of pipeline and has L first through hole and M-L second through hole that supplies the temperature pilot-gas to pass; And
Fixed part, with the shutter plate be fixed to primary importance or with the isolated second place of primary importance,
Wherein, when the shutter plate was fixed to primary importance, the only L injection orifice in M injection orifice was opened through first through hole, and when the shutter plate was fixed to the second place, the only M-L injection orifice in M injection orifice was opened through second through hole.
In Test handler, the shutter plate comprises the location slit that the shutter plate is positioned selectively the primary importance or the second place, and
Fixed part comprises the insertion teat that inserts location slit,
Wherein, each location slit includes:
The shutter plate is positioned first location division of primary importance;
The shutter plate is positioned second location division of the second place; And
The connecting portion that first location division and second location division are linked together.
According to a third aspect of the invention we, a kind of Test handler is provided, it comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make L the semiconductor device that is loaded on the test pallet under required temperature conditions, to test;
Match plate; Be arranged in the test chamber; When test pallet is contained in the test chamber; Match plate promotes to be loaded in K semiconductor device on the test pallet and K semiconductor device is electrically connected with tester towards tester, and match plate is formed with and is loaded in K semiconductor device K the through hole one to one on the test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the semiconductor device on the test pallet under the required temperature conditions;
Wherein, temperature control unit comprises:
Pipeline comprises: inlet, through the inner space of inlet with temperature pilot-gas introduction pipe; M injection orifice is formed on the front side of pipeline the temperature pilot-gas that is introduced into the inner space with injection, and wherein, K injection orifice in M injection orifice is respectively formed at and K the corresponding position of through hole, and wherein, M is the natural number greater than L; And
The injection orifice shutter opens or closes some in M the injection orifice; And
Temperature controller is set to through the inlet of pipeline the temperature pilot-gas is supplied to the inner space.
As stated, even because when test pattern changes, the pipeline or the pipe section that are formed with injection orifice also need not replacement, so test pattern can and stop the waste of resource by rapid change, and then have reduced the cost of change test pattern.
Description of drawings
Through the description of the embodiment that provides below in conjunction with accompanying drawing, the object of the invention and characteristic will become obviously, wherein:
Fig. 1 and Fig. 2 A and 2B are the views that typical test pattern exemplarily is shown;
Fig. 3 is the schematic plan view according to Test handler of the present invention;
Fig. 4 illustrates the synoptic diagram that the Test handler of semiconductor device through Fig. 3 is electrically connected with tester;
Fig. 5 is the stereographic map that illustrates according to the temperature control unit of first embodiment in the Test handler that is ready to use in Fig. 3;
Fig. 6 A to 6C is the stereographic map that illustrates according to the temperature control unit of second example in the Test handler that is ready to use in Fig. 3;
Fig. 7 A and 7B are the stereographic maps that illustrates according to the temperature control unit of the 3rd example in the Test handler that is ready to use in Fig. 3; And
Fig. 8 A and 8B are the stereographic maps that illustrates according to the temperature control unit of the 3rd example in the Test handler that is ready to use in Fig. 3.
Embodiment
Hereinafter, will describe embodiment of the present invention in detail with reference to the accompanying drawing that constitutes the present invention's part.About above-mentioned embodiment, like is indicated by similar reference number, has omitted the description to these elements among this paper.
(description of the basic configuration of Test handler)
Fig. 3 is the planimetric map that illustrates according to the major part of the Test handler TH of one embodiment of the present invention.
As shown in Figure 3, Test handler TH comprises test pallet 310, test chamber 320, match plate 330 and temperature control unit TC.
Temperature control unit TC controls temperature, and through temperature control unit TC, the semiconductor device D that is loaded on the test pallet 310 in the test chamber 320 can test under required temperature conditions.Temperature control unit TC can implement in a plurality of embodiments according to the present invention.Therefore, the embodiment of temperature control unit TC will be described through different examples.
(first embodiment of temperature control unit)
Fig. 5 is the stereographic map that illustrates according to the temperature control unit of first embodiment.
As shown in Figure 5, the temperature control unit 50 of this embodiment comprises pipeline 51 and temperature controller 53.
As shown in Figure 5, pipeline 51 comprises: container cavity S is defined in the pipeline 51 to hold the temperature pilot-gas; And inlet I; The temperature pilot-gas is introduced into container cavity S from temperature controller 53 through inlet I; 16 first injection orifice 51a are formed at the front side of pipeline 51 with the form of 4 * 4 matrixes; It is corresponding that their position and form with 4 * 4 matrixes are loaded in the position of 4 * 4 matrix through holes 331 of position and match plate 330 of the semiconductor device on the test pallet; Thereby be introduced into the temperature pilot-gas of container cavity S towards semiconductor device injection, wherein, 16 first injection orifice 51a be loaded in test pallet 310 on semiconductor device D between and the identical column pitch t of distance that is formed between the through hole 331 on the match plate 330 arrange.16 first injection orifice 51a also comprise 8 second injection orifice 51b, 8 second injection orifice 51b comprise between first row that are arranged at the first injection orifice 51a and the secondary series 4 injection orifices and with 2 times of 4 injection orifices between the 3rd row at interval, that be arranged at the first injection orifice 51a are listed as with the 4th apart from 2t to the column pitch t of the first injection orifice 51a.
Therefore, in 16para x1 pacing die trial formula, through the first injection orifice 51a temperature pilot-gas is supplied to semiconductor device D, and in 8para x2 pacing die trial formula, the temperature pilot-gas is supplied to semiconductor device D through the second injection orifice 51b.Therefore; In 16para x1 pacing die trial formula; Control the position of the first injection orifice 51a so that it is with 16 test sockets and to be formed on the position of 16 through holes 331 on the match plate 330 corresponding; In 8para x2 pacing die trial formula, control the position of the second injection orifice 51b so that it is with 8 test sockets and be formed on the position of 8 through holes 331 on the match plate 330 corresponding (it should be noted that Hi-Fix plate and match plate change along with the conversion of test pattern).
Temperature controller 53 is set to through inlet I the temperature pilot-gas is supplied in the container cavity S of pipeline 51.
Though in this embodiment, equipment (Test handler) is manufactured to the 16parax1 pacing die trial formula that is applicable to, when equipment is manufactured to when being applicable to 8para x2 pacing die trial formula, the quantity that is formed on the through hole on the match plate is required to be 8 (2 * 4 matrixes).
According to first embodiment, even when test pattern is changed, also only change the match plate and the Hi-Fix plate of tester, and need not to change the part that is formed with injection orifice 51a or 51b (promptly anterior) of pipeline 51 or pipeline 51.
Along with the development of chip integrated technology because semiconductor device becomes littler, so semiconductor device more be prone to be acted upon by temperature changes, so requirement reduces the temperature difference between the semiconductor device to be tested.
Yet, under the situation of first embodiment, because altogether 24 (=16+8) individual injection orifice injection temperature pilot-gas maybe be difficult slightly so control the temperature of semiconductor device through injection orifice 51a and 51b.This problem can be overcome by another embodiment cited below.
(second embodiment of temperature control unit)
Fig. 6 A and 6B are the stereographic maps that illustrates according to the temperature control unit of second embodiment.
With reference to Fig. 6 A and 6B, temperature control unit 60 comprises pipeline 61, injection orifice shutter 62 and temperature controller 63.
Shutter plate 62-1 has 16 first through hole 62a and 8 the second through hole 62b that supply temperature controlled air to pass.
16 first through hole 62a arrange with column pitch t, column pitch t be loaded in test pallet 310 on 16 semiconductor devices column pitch and to be formed on the column pitch of 16 through holes 331 on the match plate 330 identical.
8 second through hole 62b are provided with symmetrically; Wherein 4 through holes are between first row and secondary series of the first through hole 62a; Other 4 through holes are between the 3rd row and the 4th row of the first through hole 62a, and wherein the column pitch 2t of the second through hole 62b is the twice of the column pitch of the first through hole 62a.
Shutter plate 62-1 has near the location slit 62c being formed at its four jiaos.Each location slit 62c comprises the first location division 62c-1 and the second location division 62c-2; Wherein, The first location division 62c-1 is positioned at the side of location slit 62c and has and makes shutter plate 62-1 be positioned the lock hole of primary importance, and the second location division 62c-2 is positioned at the opposite side of location slit 62c and has and makes shutter plate 62-1 be positioned the lock hole of the second place.Distance between the center of the first location division 62c-1 of each interval and the center of the second location division 62c-2 is that half of column pitch t between the adjacent first through hole 62a is t/2.Part between the first location division 62c-1 and the second location division 62c-2 constitutes the connecting portion 62c-3 that the first location division 62c-1 and the second location division 62c-2 are linked together.
In embodiments of the present invention, primary importance refers to the position of carrying out 16para x1 pacing die trial formula, and the second place refers to the position of carrying out 8para x2 pacing die trial formula.
Insert teat 62-2 and be inserted into location slit 62c and serve as fixed part, thus through in the horizontal direction to the right or left slide opening and closing device plate 62-1 shutter plate 62-1 is fixed to the primary importance or the second place.In this embodiment, bolt can serve as insertion teat 62-2.The head that inserts teat 62-2 is wideer than the width of the first location division 62c-1 and the second location division 62c-2, breaks away from from shutter plate 62-1 to avoid inserting teat 62-2, and the point relative with head is threaded in the pipeline 61.Therefore, shutter plate 62-1 closely connects with the front side of pipeline 61 through inserting teat 62-1.In operation; The workman can through slightly promote shutter plate 62-1, in the horizontal direction slide to the right or left the shutter plate 62-1 that is raised, reduce shutter plate 62-1 and come simply shutter plate 62-1 to be changed to the second place from primary importance; And need not to make shutter plate 62-1 to separate fully with pipeline 61, vice versa.
The operation of said temperature control module 60 will be described below.
Shown in Fig. 6 A, in 16para x1 pacing die trial formula, insert teat 62-2 and be located among the first location division 62c-1 of location slit 62c.In this position, 16 the first through hole 62a of shutter plate 62-1 are corresponding one by one with 16 injection orifice 61a of pipeline 61; Therefore, 16 of shutter plate 62-1 first through hole 62a are communicated with 16 injection orifices of pipeline 61 respectively.Then, through 16 injection orifice 61a and 16 first through hole 62a the temperature pilot-gas is injected in 16 through holes 331 of match plate 330.
Shown in Fig. 6 C, in 8para x2 pacing die trial formula, insert teat 62-2 and be located among the second location division 62c-2 of location slit 62c.In this position; 8 second through hole 62b of shutter plate 62-1 are corresponding one by one with 8 injection orifice 61a that first row and the 3rd among 16 injection orifice 61a of pipeline 61 list, and the while, shutter plate 62-1 closed 8 injection orifice 61a that the secondary series and the 4th among 16 injection orifice 61a lists.Therefore; 8 the second through hole 62b of shutter plate 62-1 are communicated with 8 injection orifice 61a of pipeline 61; Then, 8 injection orifice 61a and 8 second through hole 62b of listing through first row and the 3rd are injected to the temperature pilot-gas in 16 through holes 331 of match plate 330.
(the 3rd embodiment of temperature control unit)
Fig. 7 A and 7B are the stereographic maps that illustrates according to the temperature control unit of the 3rd embodiment.
With reference to Fig. 7 A and 7B, temperature control unit 70 comprises pipeline 71, injection orifice shutter 72 and temperature controller 73.
Shutter plate 72-1 has 16 through hole 72a that supply temperature controlled air to pass.16 first through hole 72a arrange with column pitch t, column pitch t be loaded in test pallet 310 on 16 semiconductor devices column pitch, be formed at the column pitch of 16 through holes 331 on the match plate 330 and be positioned at the column pitch of the first injection orifice 71a of front side of pipeline 71 identical.
Shutter plate 72-1 comprises near the location slit 72c being positioned at its four jiaos.Similar with the location slit 62c in second embodiment, each location slit 72c comprises the first location division 72c-1 with lock hole that is positioned at the one of which side, the second location division 72c-2 and the connecting portion 72c-3 with lock hole that is positioned at its opposite side.
The insertion teat and the temperature controller that insert in teat 72-2 and temperature controller 73 and second embodiment are basic identical; Therefore, omit its detailed description at this.
To describe the operation of said temperature control module 70 below.
In 16para x1 pacing die trial formula, shown in Fig. 7 A, insert teat 72-2 and be located among the first location division 72c-1 of location slit 72c.In this position, 16 the first through hole 72a of shutter plate 72-1 are corresponding one by one with 16 injection orifice 71a of pipeline 71; Therefore, 16 first through hole 72a are communicated with 16 first injection orifice 71a respectively, close 8 second injection orifice 72b simultaneously.Then, through 16 injection orifice 71a and 16 through hole 72a the temperature pilot-gas is injected in 16 through holes 331 of match plate 330.
In 8para x2 pacing die trial formula, shown in Fig. 7 B, insert teat 72-2 and be located among the second location division 72c-2 of location slit 72c.In this position, 8 through hole 72a that second and the 4th of 16 through hole 72a of shutter plate 72-1 list respectively with pipeline 71 on 8 second injection orifice 71b corresponding, simultaneously the first injection orifice 71a is closed.Therefore, 8 second through hole 72a are communicated with 8 injection orifice 71b, and the temperature pilot-gas is injected in 8 through holes 331 of match plate 330 through 8 through hole 72a and 8 injection orifice 71b that secondary series and the 4th lists subsequently.
(the 4th embodiment of temperature control unit)
Fig. 8 A and 8B are the stereographic maps that illustrates according to the temperature control unit of the 4th embodiment.
With reference to Fig. 8 A and 8B, temperature control unit 80 comprises pipeline 81, injection orifice shutter 82 and temperature controller 83.
The structure of the pipeline 71 in the structure of pipeline 81 and the 3rd embodiment is identical.Similarly, pipeline 81 has 16 injection orifice 81a and 8 second injection orifice 81b that are formed at the front side of pipeline 81.
Injector plate 82-1 has 16 first through hole 82a and 8 the second through hole 82b that supply temperature controlled air to pass.
16 first through hole 82a arrange with column pitch t, column pitch t be loaded in test pallet 310 on 16 semiconductor devices column pitch and to be formed at the column pitch of 16 through holes 331 on the match plate 330 identical.
8 second through hole 82b are provided with symmetrically; Wherein 4 through hole 82b list between the secondary series at first of the first through hole 82a; Other 4 through hole 82b are between the 3rd row and the 4th row of the first through hole 82a; Wherein, the column pitch 2t of 8 second through hole 82b is the twice of the column pitch of the first through hole 82a.The second through hole 82b is near the first and the 3rd first through hole 82a that list, away from the second and the 4th first through hole 82a that list.In this embodiment, between the first through hole 82a that lists apart from t/4 and the second through hole 82b and the 3rd adjacent one another are between the first through hole 82a that lists of the second through hole 82b and first adjacent one another are apart from t/4 be the first through hole 82a column pitch 1/4.
Shutter plate 82-1 has location slit 82c; Similar with the location slit 62c in the 3rd embodiment; Location slit 82c comprises the first location division 82c-1 with lock hole that is positioned at the one of which side, the second location division 82c-2 and the connecting portion 82c-3 with lock hole that is positioned at its opposite side; Different is, the distance between the center of the first location division 82c-1 of each interval and the center of the second location division 82c-2 be the adjacent first through hole 82a column pitch 1/4, i.e. t/4.
The insertion teat and the temperature controller that insert in teat 82-2 and the temperature controller 83 and second embodiment are basic identical; Therefore, omit its detailed description at this.
To describe the operation of said temperature control module 80 below.
In 16para x1 pacing die trial formula, shown in Fig. 8 A, insert teat 82-2 and be located in first location division of location slit 82c.In this position, 16 the first through hole 82a of shutter plate 82-1 are corresponding one by one with 16 injection orifice 81a of pipeline 81.Therefore, 16 of shutter plate 82-1 first through hole 82a are communicated with 16 first injection orifice 81a of pipeline 81.Therefore, the temperature pilot-gas can be injected in 16 through holes 331 of match plate 330 through 16 injection orifice 81a and 16 first through hole 82a.
In 8para x2 pacing die trial formula, shown in Fig. 8 B, insert teat 82-2 and be located among the second location division 82c-2 of location slit 82c.In this position, 8 the second through hole 82a of shutter plate 82-1 are corresponding with 8 second injection orifice 81b on the pipeline 81.Therefore, 8 second through hole 82a are communicated with 8 second injection orifice 82b, close the first injection orifice 81a simultaneously.Therefore, the temperature pilot-gas can be injected in 8 through holes 331 of match plate 330 through 8 second injection orifice 81a and 8 second through hole 82b.
As stated; According to second to the 4th embodiment; Shutter plate 62-1,72-1 and 82-1 open or close the part in the injection orifice that is formed on pipeline 61,71 and 81 selectively respectively; Make the injection orifice that only is positioned at the corresponding position of semiconductor device be opened, thereby make simple temperature control become possibility.
Though injection orifice arranges with identical spacing (such as t or 2t), be loaded in the semiconductor device on the test pallet spacing can (variation between the t＜s) maybe can be changed to other distance at t and s.Therefore, the distance between the injection orifice can equate with distance or other distance between even column or the odd column.
Though invention has been described and explanation with reference to preferred implementation, it should be appreciated by those skilled in the art that to make various changes and modifications and do not depart from the scope of the present invention that is defined by the following claims.
Claims (7)
1. Test handler comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make said L the semiconductor device that is loaded on the said test pallet under required temperature conditions, to test;
Match plate; Be arranged in the said test chamber; When said test pallet is contained in the said test chamber; Said match plate promotes to be loaded in K semiconductor device on the said test pallet and a said K semiconductor device is electrically connected with said tester towards tester, and said match plate is formed with and is loaded in said K semiconductor device K the through hole one to one on the said test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the said semiconductor device on the said test pallet under the required temperature conditions;
Wherein, said temperature control unit comprises:
Pipeline, it comprises: inlet, the inner space of the temperature pilot-gas being introduced said pipeline through said inlet; M injection orifice, the front side that is formed at said pipeline is introduced into the said temperature pilot-gas of said inner space with injection, and K injection orifice in the wherein said M injection orifice is formed at and the corresponding position of a said K through hole, and M is the natural number greater than L; And
Temperature controller is set to through the said inlet of said pipeline said temperature pilot-gas is supplied to said inner space.
2. Test handler comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make said L the semiconductor device that is loaded on the said test pallet under required temperature conditions, to test;
Match plate; Be arranged in the said test chamber; When said test pallet is contained in the said test chamber; Said match plate promotes to be loaded in K semiconductor device on the said test pallet and a said K semiconductor device is electrically connected with said tester towards tester, and said match plate is formed with and is loaded in said K semiconductor device K the through hole one to one on the said test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the said semiconductor device on the said test pallet under the required temperature conditions;
Wherein, said temperature control unit comprises:
Pipeline, it comprises: inlet, the inner space of the temperature pilot-gas being introduced said pipeline through said inlet; M injection orifice; The front side that is formed at said pipeline is introduced into the said temperature pilot-gas of said inner space with injection; Wherein, K injection orifice in the said M injection orifice is respectively formed at and the corresponding position of a said K through hole, and the spacing of a wherein said K through hole is identical, and M is the natural number greater than L;
The injection orifice shutter, close selectively or open remove with the corresponding said K injection orifice of a said K through hole outside residue M-K injection orifice; And
Temperature controller is set to through the inlet of said pipeline said temperature pilot-gas is supplied to said inner space.
3. Test handler as claimed in claim 2, wherein, when M equaled L, said injection orifice shutter comprised:
The shutter plate is attached to the front side of said pipeline and has N the through hole that supplies said temperature pilot-gas to pass, and N is the natural number greater than M; And
Fixed part is fixed to said shutter plate primary importance or is different from the second place of said primary importance,
Wherein, when said shutter plate was fixed to said primary importance, a said M injection orifice all was opened, and when said shutter plate was fixed to the said second place, the only N-M injection orifice in the said M injection orifice was opened selectively.
4. Test handler as claimed in claim 2, wherein, as M during greater than L, said injection orifice shutter comprises:
The shutter plate is attached to the front side of said pipeline and has L the through hole that supplies said temperature pilot-gas to pass; And
Fixed part, with said shutter plate be fixed to primary importance or with the isolated second place of said primary importance,
Wherein, When said shutter plate is fixed to said primary importance; Only L injection orifice in the said M injection orifice is opened, and when said shutter plate was fixed to the said second place, the only M-L injection orifice in the said M injection orifice was opened selectively.
5. Test handler as claimed in claim 2, wherein, as M during greater than L, said injection orifice shutter comprises:
The shutter plate is attached to the front side of said pipeline and has L first through hole and M-L second through hole that supplies said temperature pilot-gas to pass; And
Fixed part, with said shutter plate be fixed to primary importance or with the isolated second place of said primary importance,
Wherein, When said shutter plate is fixed to said primary importance; Only L injection orifice in the said M injection orifice is opened through said first through hole; When said shutter plate was fixed to the said second place, the only M-L injection orifice in the said M injection orifice was opened through said second through hole.
6. like each described Test handler in the claim 3 to 5; Wherein, Said shutter plate comprises the location slit that said shutter plate is positioned selectively the said primary importance or the said second place, and said fixed part comprises the insertion teat that inserts said location slit
Wherein, each in the said location slit includes:
Said shutter plate is positioned first location division of said primary importance;
Said shutter plate is positioned second location division of the said second place; And
The connecting portion that said first location division and said second location division are linked together.
7. Test handler comprises:
Test pallet loads L semiconductor device, and L is the natural number greater than 1;
Test chamber is set to make said L the semiconductor device that is loaded on the said test pallet under required temperature conditions, to test;
Match plate; Be arranged in the said test chamber; When said test pallet is contained in the said test chamber; Said match plate promotes to be loaded in K semiconductor device on the said test pallet and a said K semiconductor device is electrically connected with said tester towards tester, and said match plate is formed with and is loaded in said K semiconductor device K the through hole one to one on the said test pallet, and K is the natural number that is equal to or less than L; And
Temperature control unit is controlled at the temperature that is loaded in the said semiconductor device on the said test pallet under the required temperature conditions;
Wherein, said temperature control unit comprises:
Pipeline, it comprises: inlet, the inner space of the temperature pilot-gas being introduced said pipeline through said inlet; M injection orifice; The front side that is formed at said pipeline is introduced into the said temperature pilot-gas of said inner space with injection; Wherein, K injection orifice in the said M injection orifice is respectively formed at and the corresponding position of a said K through hole, and M is the natural number greater than L; And
The injection orifice shutter opens or closes some in the said M injection orifice; And
Temperature controller is set to through the inlet of said pipeline said temperature pilot-gas is supplied to said inner space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110015237A KR101559421B1 (en) | 2011-02-21 | 2011-02-21 | Test handler |
| KR10-2011-0015237 | 2011-02-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102645623A true CN102645623A (en) | 2012-08-22 |
| CN102645623B CN102645623B (en) | 2014-11-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210041570.6A Active CN102645623B (en) | 2011-02-21 | 2012-02-21 | Test handler |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101559421B1 (en) |
| CN (1) | CN102645623B (en) |
| TW (1) | TWI445977B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112986778A (en) * | 2019-11-29 | 2021-06-18 | 泰克元有限公司 | Test processor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI779650B (en) * | 2021-06-08 | 2022-10-01 | 南亞科技股份有限公司 | Test handler and operation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515910A (en) * | 1993-05-03 | 1996-05-14 | Micro Control System | Apparatus for burn-in of high power semiconductor devices |
| US6249132B1 (en) * | 1997-02-12 | 2001-06-19 | Tokyo Electron Limited | Inspection methods and apparatuses |
| CN100341131C (en) * | 2003-04-29 | 2007-10-03 | 未来产业株式会社 | Handler for testing semiconductor device |
| EP1991041A2 (en) * | 1999-09-13 | 2008-11-12 | Hewlett-Packard Company | Spray cooling system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4054465B2 (en) | 1998-12-09 | 2008-02-27 | 株式会社アドバンテスト | Electronic component testing equipment |
-
2011
- 2011-02-21 KR KR1020110015237A patent/KR101559421B1/en active IP Right Grant
-
2012
- 2012-02-21 CN CN201210041570.6A patent/CN102645623B/en active Active
- 2012-02-21 TW TW101105710A patent/TWI445977B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515910A (en) * | 1993-05-03 | 1996-05-14 | Micro Control System | Apparatus for burn-in of high power semiconductor devices |
| US6249132B1 (en) * | 1997-02-12 | 2001-06-19 | Tokyo Electron Limited | Inspection methods and apparatuses |
| EP1991041A2 (en) * | 1999-09-13 | 2008-11-12 | Hewlett-Packard Company | Spray cooling system |
| CN100341131C (en) * | 2003-04-29 | 2007-10-03 | 未来产业株式会社 | Handler for testing semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112986778A (en) * | 2019-11-29 | 2021-06-18 | 泰克元有限公司 | Test processor |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI445977B (en) | 2014-07-21 |
| TW201235678A (en) | 2012-09-01 |
| KR101559421B1 (en) | 2015-10-13 |
| KR20120095736A (en) | 2012-08-29 |
| CN102645623B (en) | 2014-11-05 |
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