CN102625953B - 太阳能电池前接触件掺杂 - Google Patents

太阳能电池前接触件掺杂 Download PDF

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Publication number
CN102625953B
CN102625953B CN201080037509.3A CN201080037509A CN102625953B CN 102625953 B CN102625953 B CN 102625953B CN 201080037509 A CN201080037509 A CN 201080037509A CN 102625953 B CN102625953 B CN 102625953B
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CN
China
Prior art keywords
dopant
layer
photovoltaic device
doped
transparent conductive
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080037509.3A
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English (en)
Chinese (zh)
Other versions
CN102625953A (zh
Inventor
邵锐
马克思·格鲁克勒尔
边雅敏·布鲁尔
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First Solar Inc
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First Solar Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201080037509.3A 2009-07-13 2010-07-09 太阳能电池前接触件掺杂 Expired - Fee Related CN102625953B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22494109P 2009-07-13 2009-07-13
US61/224,941 2009-07-13
PCT/US2010/001942 WO2011008254A1 (en) 2009-07-13 2010-07-09 Solar cell front contact doping

Publications (2)

Publication Number Publication Date
CN102625953A CN102625953A (zh) 2012-08-01
CN102625953B true CN102625953B (zh) 2016-02-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080037509.3A Expired - Fee Related CN102625953B (zh) 2009-07-13 2010-07-09 太阳能电池前接触件掺杂

Country Status (8)

Country Link
US (2) US9153730B2 (https=)
EP (1) EP2454755A4 (https=)
JP (1) JP5878465B2 (https=)
KR (1) KR20120052310A (https=)
CN (1) CN102625953B (https=)
IN (1) IN2012DN00356A (https=)
TW (1) TWI545785B (https=)
WO (1) WO2011008254A1 (https=)

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WO2012040013A2 (en) 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
CN105914241B (zh) 2010-09-22 2018-07-24 第一太阳能有限公司 光伏装置和形成光伏装置的方法
WO2013119550A1 (en) 2012-02-10 2013-08-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
US9054245B2 (en) * 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer
US9565213B2 (en) * 2012-10-22 2017-02-07 Centripetal Networks, Inc. Methods and systems for protecting a secured network
US20150270423A1 (en) 2012-11-19 2015-09-24 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
TWI584162B (zh) * 2012-11-26 2017-05-21 揚昇照明股份有限公司 觸控裝置的製造方法
US9520530B2 (en) * 2014-10-03 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Solar cell having doped buffer layer and method of fabricating the solar cell
US10496989B2 (en) * 2016-02-22 2019-12-03 Bank Of America Corporation System to enable contactless access to a transaction terminal using a process data network
CN107123693B (zh) * 2017-04-14 2020-05-22 华南理工大学 一种基于溶液法加工的具有高透明窗口层材料的高效CdTe纳米晶太阳电池及其制备方法
WO2020008839A1 (ja) 2018-07-02 2020-01-09 国立大学法人東京工業大学 光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法
MY206714A (en) 2018-10-24 2025-01-03 First Solar Inc Buffer layers for photovoltaic devices with group v doping
WO2021062162A1 (en) 2019-09-26 2021-04-01 Raytheon Company Method for protecting ir transmitting windows and domes from emi
US11515147B2 (en) * 2019-12-09 2022-11-29 Micron Technology, Inc. Material deposition systems, and related methods

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CN101276854A (zh) * 2008-05-09 2008-10-01 上海太阳能电池研究与发展中心 碲锌镉薄膜太阳能电池
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
WO2009058985A1 (en) * 2007-11-02 2009-05-07 First Solar, Inc. Photovoltaic devices including doped semiconductor films

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US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
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Publication number Publication date
JP5878465B2 (ja) 2016-03-08
US20150380600A1 (en) 2015-12-31
IN2012DN00356A (https=) 2015-08-21
TWI545785B (zh) 2016-08-11
JP2012533187A (ja) 2012-12-20
EP2454755A4 (en) 2016-03-30
WO2011008254A1 (en) 2011-01-20
CN102625953A (zh) 2012-08-01
US20110005591A1 (en) 2011-01-13
KR20120052310A (ko) 2012-05-23
EP2454755A1 (en) 2012-05-23
US9153730B2 (en) 2015-10-06
TW201115753A (en) 2011-05-01

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Granted publication date: 20160203

Termination date: 20180709