CN102623506B - 高可靠soi ldmos功率器件 - Google Patents
高可靠soi ldmos功率器件 Download PDFInfo
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- CN102623506B CN102623506B CN201210103676.4A CN201210103676A CN102623506B CN 102623506 B CN102623506 B CN 102623506B CN 201210103676 A CN201210103676 A CN 201210103676A CN 102623506 B CN102623506 B CN 102623506B
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- ldmos
- power device
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CN201210103676.4A CN102623506B (zh) | 2012-04-10 | 2012-04-10 | 高可靠soi ldmos功率器件 |
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CN201210103676.4A CN102623506B (zh) | 2012-04-10 | 2012-04-10 | 高可靠soi ldmos功率器件 |
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CN102623506A CN102623506A (zh) | 2012-08-01 |
CN102623506B true CN102623506B (zh) | 2016-05-04 |
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CN201210103676.4A Active CN102623506B (zh) | 2012-04-10 | 2012-04-10 | 高可靠soi ldmos功率器件 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107910359A (zh) * | 2017-11-08 | 2018-04-13 | 南京邮电大学 | 一种具有扩大e‑soa区域的ldmos器件及其制造方法 |
CN113013228A (zh) * | 2021-02-24 | 2021-06-22 | 上海华力集成电路制造有限公司 | 一种提升ldmos性能的方法 |
CN117317025B (zh) * | 2023-11-27 | 2024-03-08 | 北京智芯微电子科技有限公司 | 碳化硅mosfet器件及制造方法、功率芯片 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100859701B1 (ko) * | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
US7060545B1 (en) * | 2002-10-31 | 2006-06-13 | Micrel, Inc. | Method of making truncated power enhanced drift lateral DMOS device with ground strap |
US7791161B2 (en) * | 2005-08-25 | 2010-09-07 | Freescale Semiconductor, Inc. | Semiconductor devices employing poly-filled trenches |
US8217452B2 (en) * | 2010-08-05 | 2012-07-10 | Atmel Rousset S.A.S. | Enhanced HVPMOS |
CN102306661A (zh) * | 2011-09-20 | 2012-01-04 | 上海先进半导体制造股份有限公司 | Ldmos晶体管结构及其形成方法 |
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Owner name: BEIJING YANDONG MICROELECTRNIC CO.,LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20150710 |
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Effective date of registration: 20150710 Address after: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Applicant after: Beijing Yandong Microelectronic Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Institute of Microelectronics, Chinese Academy of Sciences |
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Address after: 100020 West eight rooms, dongzhimenwai, Chaoyang District, Beijing Patentee after: Beijing Yandong Microelectronic Co., Ltd. Address before: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee before: Beijing Yandong Microelectronic Co., Ltd. |
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