CN106384747B - 一种场效应管 - Google Patents
一种场效应管 Download PDFInfo
- Publication number
- CN106384747B CN106384747B CN201611051951.7A CN201611051951A CN106384747B CN 106384747 B CN106384747 B CN 106384747B CN 201611051951 A CN201611051951 A CN 201611051951A CN 106384747 B CN106384747 B CN 106384747B
- Authority
- CN
- China
- Prior art keywords
- area
- drift region
- body area
- field
- effect tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611051951.7A CN106384747B (zh) | 2016-11-25 | 2016-11-25 | 一种场效应管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611051951.7A CN106384747B (zh) | 2016-11-25 | 2016-11-25 | 一种场效应管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106384747A CN106384747A (zh) | 2017-02-08 |
CN106384747B true CN106384747B (zh) | 2019-06-21 |
Family
ID=57959365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611051951.7A Expired - Fee Related CN106384747B (zh) | 2016-11-25 | 2016-11-25 | 一种场效应管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106384747B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108257872A (zh) * | 2018-01-12 | 2018-07-06 | 北京品捷电子科技有限公司 | 一种SiC基DI-MOSFET的制备方法及SiC基DI-MOSFET |
CN111129155A (zh) * | 2019-12-25 | 2020-05-08 | 重庆伟特森电子科技有限公司 | 一种低栅漏电容碳化硅di-mosfet制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101692462A (zh) * | 2009-10-14 | 2010-04-07 | 上海宏力半导体制造有限公司 | 一种垂直双扩散mos晶体管结构 |
CN102456738A (zh) * | 2010-10-29 | 2012-05-16 | 上海宏力半导体制造有限公司 | 一种vdmos晶体管 |
CN102468334A (zh) * | 2010-11-19 | 2012-05-23 | 无锡华润上华半导体有限公司 | Vdmos器件及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4191025B2 (ja) * | 2003-12-22 | 2008-12-03 | Necエレクトロニクス株式会社 | 縦型misfet |
-
2016
- 2016-11-25 CN CN201611051951.7A patent/CN106384747B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101692462A (zh) * | 2009-10-14 | 2010-04-07 | 上海宏力半导体制造有限公司 | 一种垂直双扩散mos晶体管结构 |
CN102456738A (zh) * | 2010-10-29 | 2012-05-16 | 上海宏力半导体制造有限公司 | 一种vdmos晶体管 |
CN102468334A (zh) * | 2010-11-19 | 2012-05-23 | 无锡华润上华半导体有限公司 | Vdmos器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106384747A (zh) | 2017-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10453955B2 (en) | Lateral DMOS device with dummy gate | |
US8890280B2 (en) | Trench-type semiconductor power devices | |
EP2860762B1 (en) | High voltage junction field effect transistor | |
US20140151798A1 (en) | Semiconductor Device and Method of Manufacturing a Semiconductor Device | |
CN103165655A (zh) | 半导体装置及其制造方法 | |
CN102969355B (zh) | 一种soi基pmosfet功率器件 | |
US8482066B2 (en) | Semiconductor device | |
CN105679820A (zh) | Jfet及其制造方法 | |
Orouji et al. | Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement | |
US20150187761A1 (en) | Method for Manufacturing a Semiconductor Device and a Semiconductor Device | |
US20160190310A1 (en) | Radio frequency ldmos device and a fabrication method therefor | |
CN108258046B (zh) | 半导体元件 | |
CN106384747B (zh) | 一种场效应管 | |
CN106972047B (zh) | 一种ldmos器件 | |
US20120098056A1 (en) | Trench device structure and fabrication | |
CN107546274B (zh) | 一种具有阶梯型沟槽的ldmos器件 | |
CN103311272A (zh) | 具有介电隔离沟槽的横向mosfet | |
CN104409500B (zh) | 射频ldmos及其制作方法 | |
CN203707141U (zh) | 集成梳状栅纵向沟道soi ldmos单元 | |
CN106952960B (zh) | 一种具有槽形结构的应变nldmos器件 | |
CN103762241B (zh) | 一种梳状栅纵向沟道soi ldmos单元 | |
CN109509783A (zh) | 半导体装置 | |
US9105721B2 (en) | Semiconductor device and manufacturing method thereof | |
TWI503972B (zh) | 橫向式絕緣閘雙極電晶體及其製造方法 | |
CN102394246A (zh) | 可升级的横向双扩散金属氧化物半导体晶体管及制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191118 Address after: 313000 1-B, building 1, No. 656, Qixing Road, high tech Zone, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Huzhou Qiqi Electromechanical Technology Co., Ltd Address before: 523000 Guangdong province Dongguan City Songshan Lake high tech Industrial Zone Building 406 industrial development productivity Patentee before: Dongguan Lianzhou Intellectual Property Operation Management Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190621 Termination date: 20201125 |