CN102593093A - 双芯片在to-220封装中引线框架的结构 - Google Patents

双芯片在to-220封装中引线框架的结构 Download PDF

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CN102593093A
CN102593093A CN2012100805868A CN201210080586A CN102593093A CN 102593093 A CN102593093 A CN 102593093A CN 2012100805868 A CN2012100805868 A CN 2012100805868A CN 201210080586 A CN201210080586 A CN 201210080586A CN 102593093 A CN102593093 A CN 102593093A
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谭天文
姜涛
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NANJING TONGHUAXIN ELECTRONIC CO Ltd
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2924/1304—Transistor
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Abstract

本发明提供一种双芯片在TO-220封装中引线框架的结构，引线框架的结构特征是：由散热片、大基岛、小基岛及引脚组成，散热片中包含大基岛，引脚中包含小基岛。大基岛中放置高压大功率(晶体三极管、IGBT管或MOS管)，小基岛中放置电源驱动芯片。

Description

双芯片在TO-220封装中引线框架的结构
技术领域
本发明涉及一种由双芯片集成电路在TO-220封装中引线框架的结构，属于半导体集成电路封装技术领域。
背景技术
随着新能源及开关电源日益普及和广泛应用，需大量使用高性能、节能的开关电源芯片。为了方便开关电源电路设计与应用，采用多芯片封装是市场上常用的做法。
在一个集成电路封装内放入一个以上的芯片，使外围电路变的简单，节约空间降低整机成本。
目前市场小功率电源芯片普遍将双芯片封装在DIP8封装内如图1、图2、图3、图4，来简化外围电路。随着大功率电源芯片对散热要求的提高，显然采用DIP8的封装无法满足大功率散热要求。
发明内容
本发明的目的是克服现有技术存在的不足，解决大功率电源芯片散热的问题。提供一种双芯片在TO-220封装中引线框架的结构。
本发明的目的通过以下技术方案来实现：
双芯片在TO-220封装中引线框架的结构，引线框架的结构特征是：由散热片、大基岛、小基岛及引脚组成，散热片中包含大基岛，引脚中包含小基岛。大基岛中放置高压大功率(晶体三极管、IGBT管或MOS管)，小基岛中放置电源驱动芯片。
将高压大功率(晶体三极管、IGBT管或MOS管)、电源驱动芯片分别用焊料焊接在大基岛、小基岛上，按照金丝焊线图纸的要求键合金丝。键合金丝的优选方案是先键合芯片与芯片间金丝，然后再键合芯片到管脚上的金丝，提高键合金丝的效率。
本发明技术方案突出的实质性特点及显著的进步主要体现在：
双芯片在TO-220封装中引线框架的结构，与使用其它方案实现相同功能的产品相比具有电性能、良品率、可靠性完全一致的特点，从而提高产品的整体优势；
与现有采用双芯片DIP8封装的小输出功率电源芯片产品相比具有输出功率大、散热性能好、工作稳定性更高的特点；
工艺结构简单、容易实施，良品率高达99％以上；
将双芯片封装在一起，可以确保产品的一致性好、成品合格率高、成本低等优点。
附图说明
下面结合附图对本发明技术方案做进一步说明：
图1是背景技术中双芯片引线框架的结构主视示意图；
图2是背景技术中双芯片引线框架的结构封装主视示意图；
图3图1的左视图；
图4图2的左视图；
图5是本发明中双芯片在TO-220封装中引线框架的结构主视示意图；
图6是本发明中双芯片在TO-220封装中引线框架的结构封装主视示意图；
图7是图5的左视图；
图8是图6的左视图。
图中各个附图标记的含义见下表：
Figure BSA00000689847600021
具体实施方式
如图5、图6、图7、图8所示，双芯片在TO-220封装中引线框架的结构。
具体封装制造时，封装工艺流程如下：
分别在引线框架中大基岛和小基岛的区域内点上焊料；
通过常规的装片机在引线框架中沾有焊料的大基岛的区域内放置高压大功率(晶体三极管、IGBT管或MOS管)，在引线框架中沾有焊料的小基岛的区域内放置电源驱动芯片；
按照金丝焊线图纸的要求键合金丝，优选方案是先键合高压大功率(晶体三极管、IGBT管或MOS管)管芯与电源驱动芯片管芯间的金丝，然后再键合电源驱动芯片管芯与引脚间的金丝，提高金丝的键合效率；
送入塑封模具完成塑封，接着电镀管脚、切筋、测试、检验、包装、入库。
综上所述，本发明提供一种工艺简单、制造难度低、良品率高及性能稳定，将高压大功率(晶体三极管、IGBT管或MOS管)放置在引线框架的大基岛上，提高了散热性能，产品一致性好、成品合格率高、成本低，提高了经济效益及产品的竞争优势。
需要理解到的是：以上所述仅仅是本发明的优选实施方式，对于本技术领域的技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明保护范围。

Claims (2)

1.双芯片在TO-220封装中引线框架的结构，引线框架的结构特征是：由散热片、大基岛、小基岛及引脚组成，散热片中包含大基岛，引脚中包含小基岛。
2.大基岛中放置高压大功率(晶体三极管、IGBT管或MOS管)，小基岛中放置电源驱动芯片。
CN2012100805868A 2012-03-26 2012-03-26 双芯片在to-220封装中引线框架的结构 Pending CN102593093A (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943594A (zh) * 2014-03-26 2014-07-23 张轩 一种适用于大功率电器的引线框架
CN103943593A (zh) * 2014-03-26 2014-07-23 张轩 一种双芯片引线框架
CN106876362A (zh) * 2017-04-21 2017-06-20 无锡市宏湖微电子有限公司 双基岛封装电路
CN106952888A (zh) * 2017-04-21 2017-07-14 无锡市宏湖微电子有限公司 用于双基岛封装电路的引线框架

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132468A (ja) * 1992-10-20 1994-05-13 Hitachi Ltd 半導体装置
CN102104031A (zh) * 2009-12-18 2011-06-22 无锡华润安盛科技有限公司 单岛外露的双岛结构引线框
CN102117785A (zh) * 2011-01-19 2011-07-06 南通富士通微电子股份有限公司 一种半导体功率器件封装结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132468A (ja) * 1992-10-20 1994-05-13 Hitachi Ltd 半導体装置
CN102104031A (zh) * 2009-12-18 2011-06-22 无锡华润安盛科技有限公司 单岛外露的双岛结构引线框
CN102117785A (zh) * 2011-01-19 2011-07-06 南通富士通微电子股份有限公司 一种半导体功率器件封装结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943594A (zh) * 2014-03-26 2014-07-23 张轩 一种适用于大功率电器的引线框架
CN103943593A (zh) * 2014-03-26 2014-07-23 张轩 一种双芯片引线框架
CN106876362A (zh) * 2017-04-21 2017-06-20 无锡市宏湖微电子有限公司 双基岛封装电路
CN106952888A (zh) * 2017-04-21 2017-07-14 无锡市宏湖微电子有限公司 用于双基岛封装电路的引线框架

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Application publication date: 20120718