CN102569578B - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN102569578B
CN102569578B CN201110266714.3A CN201110266714A CN102569578B CN 102569578 B CN102569578 B CN 102569578B CN 201110266714 A CN201110266714 A CN 201110266714A CN 102569578 B CN102569578 B CN 102569578B
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China
Prior art keywords
layer
light
light emitting
plane
semiconductor
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CN201110266714.3A
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English (en)
Chinese (zh)
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CN102569578A (zh
Inventor
山崎宏德
古木胜义
西川幸江
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Led Devices (AREA)
CN201110266714.3A 2010-12-13 2011-09-07 半导体发光元件 Active CN102569578B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010276839A JP5087672B2 (ja) 2010-12-13 2010-12-13 半導体発光素子
JP276839/2010 2010-12-13

Publications (2)

Publication Number Publication Date
CN102569578A CN102569578A (zh) 2012-07-11
CN102569578B true CN102569578B (zh) 2015-11-25

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Family Applications (1)

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CN201110266714.3A Active CN102569578B (zh) 2010-12-13 2011-09-07 半导体发光元件

Country Status (4)

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US (2) US9287448B2 (enExample)
JP (1) JP5087672B2 (enExample)
CN (1) CN102569578B (enExample)
TW (1) TWI463698B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5087672B2 (ja) * 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子
EP2528114A3 (en) * 2011-05-23 2014-07-09 LG Innotek Co., Ltd. Light emitting device, light emitting device package, and light unit
TWI458122B (zh) * 2011-11-23 2014-10-21 Toshiba Kk 半導體發光元件
JP5661660B2 (ja) 2012-02-07 2015-01-28 株式会社東芝 半導体発光素子
JP2014120695A (ja) * 2012-12-19 2014-06-30 Rohm Co Ltd 半導体発光素子
TWI664746B (zh) * 2015-06-17 2019-07-01 晶元光電股份有限公司 半導體發光元件
WO2017191954A1 (ko) * 2016-05-04 2017-11-09 엘지이노텍 주식회사 조명모듈 및 이를 구비한 조명 장치
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
US10833222B2 (en) * 2016-08-26 2020-11-10 The Penn State Research Foundation High light extraction efficiency (LEE) light emitting diode (LED)
JP2018050070A (ja) * 2017-11-21 2018-03-29 ローム株式会社 半導体発光素子
JP7364376B2 (ja) * 2018-10-12 2023-10-18 ローム株式会社 半導体発光装置および半導体発光装置の製造方法
US11114822B2 (en) * 2019-08-27 2021-09-07 Kabushiki Kaisha Toshiba Optical semiconductor element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1652367A (zh) * 2001-06-25 2005-08-10 株式会社东芝 面发光型半导体发光元件
CN1947270A (zh) * 2004-04-27 2007-04-11 信越半导体株式会社 发光元件的制造方法及发光元件
CN101075652A (zh) * 2006-09-05 2007-11-21 武汉迪源光电科技有限公司 粗化电极用于高亮度正装led芯片和垂直led芯片的制作工艺
CN100481541C (zh) * 2004-04-27 2009-04-22 信越半导体株式会社 发光元件的制造方法及发光元件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020041431A (ko) * 2000-07-11 2002-06-01 미우라 아키라 면 광원 장치
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
US7615798B2 (en) * 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
JP4835377B2 (ja) 2006-10-20 2011-12-14 日立電線株式会社 半導体発光素子
US7692203B2 (en) 2006-10-20 2010-04-06 Hitachi Cable, Ltd. Semiconductor light emitting device
WO2008064070A1 (en) 2006-11-17 2008-05-29 3M Innovative Properties Company Optical bonding composition for led light source
JP2009206265A (ja) 2008-02-27 2009-09-10 Hitachi Cable Ltd 半導体発光素子及び半導体発光素子の製造方法
JP2010067903A (ja) 2008-09-12 2010-03-25 Toshiba Corp 発光素子
US8628673B2 (en) * 2009-05-13 2014-01-14 Kabushiki Kaisha Toshiba Resin composition for pattern formation, pattern formation method and process for producing light-emitting element
JP4803302B2 (ja) * 2009-12-17 2011-10-26 三菱化学株式会社 窒化物半導体発光素子
JP2011249510A (ja) 2010-05-26 2011-12-08 Toshiba Corp 発光素子
JP2012028547A (ja) 2010-07-23 2012-02-09 Toshiba Corp 半導体素子およびその製造方法
JP5087672B2 (ja) * 2010-12-13 2012-12-05 株式会社東芝 半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1652367A (zh) * 2001-06-25 2005-08-10 株式会社东芝 面发光型半导体发光元件
CN1947270A (zh) * 2004-04-27 2007-04-11 信越半导体株式会社 发光元件的制造方法及发光元件
CN100481541C (zh) * 2004-04-27 2009-04-22 信越半导体株式会社 发光元件的制造方法及发光元件
CN101075652A (zh) * 2006-09-05 2007-11-21 武汉迪源光电科技有限公司 粗化电极用于高亮度正装led芯片和垂直led芯片的制作工艺

Also Published As

Publication number Publication date
TWI463698B (zh) 2014-12-01
US20160149081A1 (en) 2016-05-26
US20120146072A1 (en) 2012-06-14
US9991418B2 (en) 2018-06-05
JP2012129234A (ja) 2012-07-05
CN102569578A (zh) 2012-07-11
TW201228030A (en) 2012-07-01
JP5087672B2 (ja) 2012-12-05
US9287448B2 (en) 2016-03-15

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