CN102569360A - Bidirectional triode thyristor based on diode auxiliary triggering - Google Patents
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Abstract
The invention discloses a bidirectional triode thyristor based on diode auxiliary triggering, which comprises a P substrate layer and two diode links, wherein a first N well, a P well and a second N well are arranged on the P substrate layer; a first N plus active implantation area, a first P plus active implantation area and a second N plus active implantation area are arranged on the first N well; a third N plus active implantation area, a second P plus active implantation area and a fourth N plus active implantation area are arranged on the second N well; and the third N plus active implantation area is connected with the anode of a first diode link, and the second N plus active implantation area is connected with the anode of a second diode link. The bidirectional triode thyristor utilizes diodes as auxiliary triggering units, so the thyristor has adjustable and lower forward and reverse breakdown voltages, can be suitable to on-chip electronic static discharge (ESD) protection in a deep sub-micron technology, and can be particularly suitable to the ESD protection and application of a plurality of mixing voltage interface circuits or different power supply areas.
Description
Technical field
The invention belongs to integrated circuit electrostatic defending technical field, be specifically related to a kind of bidirectional triode thyristor device based on the diode auxiliary triggering.
Background technology
Natural Electrostatic Discharge phenomenon has constituted serious threat to the reliability of integrated circuit.In industrial quarters, the inefficacy 30% of IC products all is owing to suffer the static discharge phenomenon caused, and more and more littler process, and thinner gate oxide thickness all makes integrated circuit receive the probability that static discharge destroys to be increased greatly.Therefore, the reliability of improving integrated circuit electrostatic discharge protection has very important effect to the rate of finished products that improves product.
The pattern of static discharge phenomenon is divided into four kinds usually: HBM (human body discharge mode), MM (machine discharge mode), CDM (assembly charging and discharging pattern) and electric field induction pattern (FIM).And the most common two kinds of static discharge patterns that also are the industrial quarters product must pass through are HBM and MM.When static discharge took place, electric charge flowed into and flows out from the another pin from a pin of chip usually, and the electric current that this moment, electrostatic charge produced is usually up to several amperes, and the voltage that produces at the electric charge input pin is up to several volts even tens volts.Can cause the damage of inside chip if bigger ESD electric current flows into inside chip, simultaneously, the high pressure that produces at input pin also can cause internal components generation grid oxygen punch-through, thereby causes circuit malfunction.Therefore, damaged by ESD, all will carry out effective ESD protection, the ESD electric current is released each pin of chip in order to prevent inside chip.
In the evolution of ESD protection, diode, GGNMOS (the NMOS pipe of grid ground connection), SCR devices such as (controllable silicons) are used as the ESD protective unit usually.For modern CMOS (complementary metal oxide semiconductors (CMOS)) integrated circuit, the input of chip output have usually the input buffering level the grid of output buffer stage or MOS device as input.Therefore, when esd event took place, ESD stress can be applied directly on the grid oxygen, if the ESD device opens not prompt enough or clamping voltage is too high, grid oxygen punch-through takes place probably, thereby chip is damaged.
Because having to hang down, unidirectional SCR structure keeps characteristics such as voltage, high current drain ability, so unidirectional SCR structure has very wide application in the ESD protection.
Fig. 1 is the unidirectional SCR structure under a kind of CMOS technology; This unidirectional SCR trigger voltage in one direction is higher; And be the parasitic diode structure on another direction, trigger voltage is very low and non-adjustable, therefore; This structure is difficult to ESD protection on the direct application sheet, especially can not be applied in the adjustable and lower mixed-voltage domain interface circuit ESD protection of the two-way trigger voltage of ask for something.
Fig. 2 is the two-way SCR structure under a kind of CMOS technology, and this structure is compared unidirectional SCR structure, all has identical triggering voltage at both direction, but trigger voltage value is same too high and non-adjustable, under deep submicron process, is difficult to protect fragile grid oxygen.
Summary of the invention
To the above-mentioned technological deficiency of existing in prior technology; The invention discloses a kind of bidirectional triode thyristor device based on the diode auxiliary triggering; Make controllable silicon on both direction, have two-way adjustable and lower trigger voltage, can directly apply to the ESD protection of some the mixed-voltage interface circuits under the deep submicron process.
A kind of bidirectional triode thyristor device based on the diode auxiliary triggering comprises:
P substrate layer and two diode links;
From left to right be provided with a N trap, P trap and the 2nd N trap on the described P substrate layer successively, described P trap links to each other with the 2nd N trap with a N trap side by side;
From left to right be provided with the active injection region of a N+, the active injection region of a P+ and the active injection region of the 2nd N+ on the described N trap successively side by side; From left to right be provided with the active injection region of the 3rd N+, the active injection region of the 2nd P+ and the active injection region of the 4th N+ on described the 2nd N trap successively side by side;
The active injection region of a described N+ links to each other through first metal electrode with the active injection region of a P+, and the active injection region of described the 2nd P+ links to each other through second metal electrode with the active injection region of the 4th N+;
The active injection region of described the 3rd N+ links to each other with the anode of the first diode link, and the negative electrode of the first diode link links to each other with first metal electrode; The active injection region of described the 2nd N+ links to each other with the anode of the second diode link, and the negative electrode of the second diode link links to each other with second metal electrode.
Described several diodes of diode chain route are in series; Wherein, the negative electrode of arbitrary diode links to each other with the anode of adjacent diode; The anode of the negative electrode of the diode of described diode link one end and the diode of the other end constitutes the negative electrode and the anode of described diode link respectively.
Shallow-trench isolation is passed through in active injection region of a described N+ and the active injection region of a P+, the active injection region of a P+ and the active injection region of the 2nd N+, the active injection region of the 2nd N+ and the active injection region of the 3rd N+, the active injection region of the 3rd N+ and the active injection region of the 2nd P+ or the active injection region of the 2nd P+ and the active injection region of the 4th N+.
The equivalent electric circuit of described silicon-controlled device is made up of four resistance, three triodes and two diode links; Wherein, One end of the emitter of first triode and first resistance and the negative electrode of the first diode link link to each other and constitute first electrode of silicon-controlled device; Base stage links to each other with the other end of first resistance, the anode of the second diode link and the emitter or the collector electrode of the 3rd triode, and collector electrode links to each other with an end of the 3rd resistance; One end of the emitter of second triode and second resistance and the negative electrode of the second diode link link to each other and constitute second electrode of silicon-controlled device; Base stage links to each other with the other end of second resistance, the anode of the first diode link and the collector electrode or the emitter of the 3rd triode, and collector electrode links to each other with an end of the 4th resistance; The base stage of the 3rd triode links to each other with the other end of the 3rd resistance and the other end of the 4th resistance.
Described first triode and second triode are the positive-negative-positive triode, and described the 3rd triode is a NPN type triode.
Described first triode is made up of the active injection region of a described P+, a N trap and P trap; Described second triode is made up of the active injection region of described the 2nd P+, the 2nd N trap and P trap; Described the 3rd triode is made up of a N trap, the 2nd N trap and P trap; Described first resistance and the 3rd resistance are the dead resistance of a N trap; Described second resistance and the 4th resistance are the dead resistance of the 2nd N trap.
The protection voltage range of silicon-controlled device of the present invention can reach (1.2～5) V, and trigger voltage is the integral multiple of 0.7V, can adjust the next corresponding adjustment trigger voltage of number of diode in the diode link according to actual conditions.
Silicon-controlled device of the present invention utilizes diode as the auxiliary triggering unit, makes device have adjustable and lower trigger voltage, realizes the ESD protection of low trigger voltage; This silicon-controlled device has two-way forward and reverse puncture voltage simultaneously, makes device applicable to ESD protection on the sheet under the deep submicron process, especially applicable to the ESD security application between some mixed-voltage interface circuits or different electrical power territory.
Description of drawings
Fig. 1 is the structural representation of traditional one-way SCR device.
Fig. 2 is the structural representation of traditional double to silicon-controlled device.
Fig. 3 is the enforcement domain of silicon-controlled device of the present invention.
Fig. 4 is the generalized section of Fig. 3 along AA ' direction.
Fig. 5 is the equivalent circuit diagram of silicon-controlled device of the present invention.
Fig. 6 (a) is the ESD current drain path profile of silicon-controlled device of the present invention when esd event betides the A port.
Fig. 6 (b) is the ESD current drain path profile of silicon-controlled device of the present invention when esd event betides the K port.
Fig. 7 is the structural representation of silicon-controlled device of the present invention.
Fig. 8 is silicon-controlled device of the present invention and the traditional double current-voltage characteristic sketch map to silicon-controlled device.
Embodiment
In order to describe the present invention more particularly, technical scheme of the present invention and relative theory thereof are elaborated below in conjunction with accompanying drawing and embodiment.
Like Fig. 3 and shown in Figure 4, a kind of bidirectional triode thyristor device based on the diode auxiliary triggering comprises:
From left to right be provided with a N trap 21, P trap 23 and the 2nd N trap 22 on the P substrate layer 10 successively, P trap 23 links to each other with the 2nd N trap 22 with a N trap 21 side by side;
From left to right be provided with the active injection region of a N+ 41, the active injection region 51 of a P+ and the active injection region 42 of the 2nd N+ on the one N trap 21 successively side by side; From left to right be provided with the active injection region of the 3rd N+ 43, the active injection region 52 of the 2nd P+ and the active injection region 44 of the 4th N+ on the 2nd N trap 22 successively side by side;
The active injection region 41 of the one N+ links to each other through first metal electrode 61 with the active injection region 51 of a P+, and the active injection region 52 of the 2nd P+ links to each other through second metal electrode 62 with the active injection region 44 of the 4th N+;
The active injection region 43 of the 3rd N+ links to each other with the anode of the first diode link, and the negative electrode of the first diode link links to each other with first metal electrode 61; The active injection region 42 of the 2nd N+ links to each other with the anode of the second diode link, and the negative electrode of the second diode link links to each other with second metal electrode 62.
In this execution mode, 4 diodes of diode chain route are in series; Diode D11～D14 series connection constitutes the first diode link, and diode D21～D24 series connection constitutes the second diode link.
The active injection region of the active injection region of the active injection region of an active injection region 41 of the one N+ and a P+ 51, the active injection region 51 of a P+ and the 2nd N+ 42, the active injection region 42 of the 2nd N+ and the 3rd N+ 43, the active injection region 43 of the 3rd N+ and the active injection region 52 of the 2nd P+ and the active injection region 52 of the 2nd P+ and the active injection region 44 of the 4th N+ all isolate through shallow slot 3, are filled with silica in the shallow slot 3.
As shown in Figure 5, the equivalent electric circuit of this execution mode silicon-controlled device is made up of four resistance R 1～R4, three triode Q1～Q3 and two diode links; Wherein, One end of the emitter of the first triode Q1 and first resistance R 1 and the negative electrode of the first diode link link to each other and constitute the A electrode of silicon-controlled device; Base stage links to each other with the other end of first resistance R 1, the anode of the second diode link and emitter or the collector electrode of the 3rd triode Q3, and collector electrode links to each other with an end of the 3rd resistance R 3; One end of the emitter of the second triode Q2 and second resistance R 2 and the negative electrode of the second diode link link to each other and constitute the K electrode of silicon-controlled device; Base stage links to each other with the other end of second resistance R 2, the anode of the first diode link and collector electrode or the emitter of the 3rd triode Q3, and collector electrode links to each other with an end of the 4th resistance R 4; The base stage of the 3rd triode Q3 links to each other with the other end of the 3rd resistance R 3 and the other end of the 4th resistance R 4.
The first triode Q1 and the second triode Q2 are the positive-negative-positive triode, and the 3rd triode Q3 is a NPN type triode.
The first triode Q1 is made up of the active injection region of a P+ 51, a N trap 21 and P trap 23; The second triode Q2 is made up of the active injection region of the 2nd P+ 52, the 2nd N trap 22 and P trap 23; The 3rd triode Q3 is made up of a N trap 21, the 2nd N trap 22 and P trap 23; First resistance R 1 and the 3rd resistance R 3 are the dead resistance of a N trap 21; Second resistance R 2 and the 4th resistance R 4 are the dead resistance of the 2nd N trap 22.
Like Fig. 6 (a) and shown in Figure 7; When esd event occurs in the A end; And during K end ground connection; When the reverse PN junction generation avalanche breakdown that the voltage that the ESD electric current produces on the A end can cause a N trap 21 and P trap 23 to be constituted, the pressure drop that the charge carrier that produces when avalanche breakdown is produced on first resistance R 1 reach the cut-in voltage (0.7V) of the forward diode that the active injection region 51 of a P+ and a N trap 21 constituted, parasitic SCR path unlatching; And the A terminal voltage is clamped at one than electronegative potential, the ESD electric current of this moment will be released through the SCR path.Because the existence of diode link and device parasitic diode reaches (m+1) * 0.7V barrier voltage at the ESD transient voltage, m=4 (the diode number in the diode link); And the trigger voltage of this magnitude of voltage when not adding the diode link so through the active injection region 42 of the 2nd N+ that adds the auxiliary current path is provided, more early opens the first triode Q1; So trigger voltage is than low under the situation that does not connect the diode link.
Like Fig. 6 (b) and shown in Figure 7; When esd event occurs in the K end; And during A end ground connection; When the reverse PN junction generation avalanche breakdown that the voltage that the ESD electric current produces on the K end can cause the 2nd N trap 22 and P trap 23 to be constituted, the pressure drop that the charge carrier that produces when avalanche breakdown is produced on second resistance R 2 reach the cut-in voltage (0.7V) of the forward diode that the active injection region 52 of the 2nd P+ and the 2nd N trap 22 constituted, parasitic SCR path unlatching; And the K terminal voltage is clamped at one than electronegative potential, the ESD electric current of this moment will be released through the SCR path.Same because symmetry after the ESD transient voltage reaches (m+1) * 0.7V barrier voltage, provides the auxiliary current path through the active injection region 43 of the 3rd N+ that adds, the second triode Q2 is more early opened; So trigger voltage is than low under the situation that does not connect the diode link.
This execution mode shown in Figure 8 and traditional double are held the current-voltage characteristic to the K end to silicon-controlled device at ESD stress by A; As can be seen from the figure when m=4; Be that the external diode number is 4; When total number of diodes was 5, traditional double was 11.8V to the trigger voltage of silicon-controlled device under nanometer technology, and the trigger voltage of this execution mode is 3.5V; Because two kinds of structures are two-way and symmetrical, when ESD stress by K to A, the current-voltage characteristic curve of gained symmetry.So because existence of diode link; Extra auxiliary current path is provided; Parasitic triode is opened in advance; Greatly reduce the trigger voltage of silicon-controlled device, and can adjust the size of two-way trigger voltage, be applicable to ESD protection on the sheet below the deep-submicron through the diode number in the adjustment diode link.
Claims (2)
1. the bidirectional triode thyristor device based on the diode auxiliary triggering is characterized in that, comprising:
P substrate layer (10) and two diode links;
From left to right be provided with a N trap (21), P trap (23) and the 2nd N trap (22) on the described P substrate layer (10) successively, described P trap (23) links to each other with the 2nd N trap (22) with a N trap (21) side by side;
From left to right be provided with the active injection region of a N+ (41), the active injection region of a P+ (51) and the active injection region of the 2nd N+ (42) successively side by side on the described N trap (21); From left to right be provided with the active injection region of the 3rd N+ (43), the active injection region of the 2nd P+ (52) and the active injection region of the 4th N+ (44) successively side by side on described the 2nd N trap (22);
The active injection region of a described N+ (41) links to each other through first metal electrode (61) with the active injection region of a P+ (51), and the active injection region of described the 2nd P+ (52) links to each other through second metal electrode (62) with the active injection region of the 4th N+ (44);
The active injection region of described the 3rd N+ (43) links to each other with the anode of the first diode link, and the negative electrode of the first diode link links to each other with first metal electrode (61); The active injection region of described the 2nd N+ (42) links to each other with the anode of the second diode link, and the negative electrode of the second diode link links to each other with second metal electrode (62).
2. the bidirectional triode thyristor device based on the diode auxiliary triggering according to claim 1 is characterized in that: the active injection region of a described N+ (41) isolates through shallow slot (3) with the active injection region of the 4th N+ (44) with active injection region of the 2nd P+ (52) or the active injection region of the 2nd P+ (52) with the active injection region of the 3rd N+ (43), the active injection region of the 3rd N+ (43) with the active injection region of the 2nd N+ (42), the active injection region of the 2nd N+ (42) with the active injection region of a P+ (51), the active injection region of a P+ (51).
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8946766B2 (en) | 2013-02-27 | 2015-02-03 | International Business Machines Corporation | Bi-directional silicon controlled rectifier structure |
| CN106920843A (en) * | 2015-12-24 | 2017-07-04 | 大唐恩智浦半导体有限公司 | Electrostatic discharge protection circuit and its silicon controlled rectifier (SCR) |
| CN107195630A (en) * | 2017-06-06 | 2017-09-22 | 上海华力微电子有限公司 | A kind of new E SD protection structures and its implementation |
| CN107248514A (en) * | 2017-06-06 | 2017-10-13 | 上海华力微电子有限公司 | A kind of new E SD protection structures and its implementation |
| CN108461491A (en) * | 2018-03-21 | 2018-08-28 | 湖南静芯微电子技术有限公司 | A kind of low triggering bidirectional thyristor electrostatic protection device of high maintenance voltage |
| CN110349950A (en) * | 2019-06-19 | 2019-10-18 | 成都华微电子科技有限公司 | Low trigger voltage, high ESD circuit |
| CN113345887A (en) * | 2021-08-04 | 2021-09-03 | 江苏应能微电子有限公司 | Electrostatic protection device |
| CN113363253A (en) * | 2021-08-11 | 2021-09-07 | 江苏应能微电子有限公司 | Silicon controlled rectifier layout structure of integrated reverse conducting diode |
| CN113380786A (en) * | 2021-08-11 | 2021-09-10 | 江苏应能微电子有限公司 | Thyristor transient voltage suppression protection device structure integrated with reverse conducting diode |
| US11791625B2 (en) | 2020-05-12 | 2023-10-17 | Changxin Memory Technologies, Inc. | Electrostatic protection circuit |
| EP4394876A3 (en) * | 2023-01-02 | 2024-07-24 | Samsung Electronics Co., Ltd. | Device for electrostatic discharge protection using silicon controlled rectifier |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8946766B2 (en) | 2013-02-27 | 2015-02-03 | International Business Machines Corporation | Bi-directional silicon controlled rectifier structure |
| US9059198B2 (en) | 2013-02-27 | 2015-06-16 | International Business Machines Corporation | Bi-directional silicon controlled rectifier structure |
| CN106920843A (en) * | 2015-12-24 | 2017-07-04 | 大唐恩智浦半导体有限公司 | Electrostatic discharge protection circuit and its silicon controlled rectifier (SCR) |
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| CN107195630B (en) * | 2017-06-06 | 2019-11-26 | 上海华力微电子有限公司 | A kind of new E SD protection structure and its implementation |
| CN107248514A (en) * | 2017-06-06 | 2017-10-13 | 上海华力微电子有限公司 | A kind of new E SD protection structures and its implementation |
| CN107195630A (en) * | 2017-06-06 | 2017-09-22 | 上海华力微电子有限公司 | A kind of new E SD protection structures and its implementation |
| CN107248514B (en) * | 2017-06-06 | 2019-11-22 | 上海华力微电子有限公司 | A kind of new E SD protection structure and its implementation |
| CN108461491B (en) * | 2018-03-21 | 2023-09-29 | 湖南静芯微电子技术有限公司 | Low-trigger bidirectional silicon controlled electrostatic protection device with high maintenance voltage |
| CN108461491A (en) * | 2018-03-21 | 2018-08-28 | 湖南静芯微电子技术有限公司 | A kind of low triggering bidirectional thyristor electrostatic protection device of high maintenance voltage |
| CN110349950A (en) * | 2019-06-19 | 2019-10-18 | 成都华微电子科技有限公司 | Low trigger voltage, high ESD circuit |
| US11791625B2 (en) | 2020-05-12 | 2023-10-17 | Changxin Memory Technologies, Inc. | Electrostatic protection circuit |
| CN113345887A (en) * | 2021-08-04 | 2021-09-03 | 江苏应能微电子有限公司 | Electrostatic protection device |
| CN113363253A (en) * | 2021-08-11 | 2021-09-07 | 江苏应能微电子有限公司 | Silicon controlled rectifier layout structure of integrated reverse conducting diode |
| CN113380786A (en) * | 2021-08-11 | 2021-09-10 | 江苏应能微电子有限公司 | Thyristor transient voltage suppression protection device structure integrated with reverse conducting diode |
| CN113380786B (en) * | 2021-08-11 | 2021-11-16 | 江苏应能微电子有限公司 | Thyristor transient voltage suppression protection device structure integrated with reverse conducting diode |
| CN113363253B (en) * | 2021-08-11 | 2021-11-30 | 江苏应能微电子有限公司 | Silicon controlled rectifier layout structure of integrated reverse conducting diode |
| EP4394876A3 (en) * | 2023-01-02 | 2024-07-24 | Samsung Electronics Co., Ltd. | Device for electrostatic discharge protection using silicon controlled rectifier |
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Application publication date: 20120711 |