CN102549750A - 用于图像传感器的最佳化光导阵列 - Google Patents

用于图像传感器的最佳化光导阵列 Download PDF

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Publication number
CN102549750A
CN102549750A CN2010800418898A CN201080041889A CN102549750A CN 102549750 A CN102549750 A CN 102549750A CN 2010800418898 A CN2010800418898 A CN 2010800418898A CN 201080041889 A CN201080041889 A CN 201080041889A CN 102549750 A CN102549750 A CN 102549750A
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China
Prior art keywords
pixels
light guide
width
light
image sensor
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Pending
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CN2010800418898A
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English (en)
Chinese (zh)
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郑苍隆
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2010800418898A 2009-11-05 2010-11-05 用于图像传感器的最佳化光导阵列 Pending CN102549750A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25858109P 2009-11-05 2009-11-05
US61/258,581 2009-11-05
US25918009P 2009-11-08 2009-11-08
US61/259,180 2009-11-08
PCT/IB2010/055049 WO2011055344A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Publications (1)

Publication Number Publication Date
CN102549750A true CN102549750A (zh) 2012-07-04

Family

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Family Applications (1)

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CN2010800418898A Pending CN102549750A (zh) 2009-11-05 2010-11-05 用于图像传感器的最佳化光导阵列

Country Status (10)

Country Link
US (2) US8228408B2 (https=)
JP (1) JP2013510424A (https=)
CN (1) CN102549750A (https=)
AU (1) AU2010316634A1 (https=)
BR (1) BR112012010619A2 (https=)
DE (1) DE112010004288T5 (https=)
GB (1) GB2484225B (https=)
MX (1) MX2012005169A (https=)
SG (1) SG179551A1 (https=)
WO (1) WO2011055344A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
CN111816670A (zh) * 2019-04-12 2020-10-23 采钰科技股份有限公司 固态成像装置
CN113658963A (zh) * 2020-05-12 2021-11-16 采钰科技股份有限公司 固态成像装置

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JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
WO2011142065A1 (ja) * 2010-05-14 2011-11-17 パナソニック株式会社 固体撮像装置及びその製造方法
KR101131977B1 (ko) * 2011-04-26 2012-03-29 (주)켐리치 배터리 커버에 발광장치가 구비된 휴대폰
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
JP6308717B2 (ja) * 2012-10-16 2018-04-11 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
JP6173259B2 (ja) * 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR102312964B1 (ko) * 2014-12-15 2021-10-15 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102667702B1 (ko) * 2016-12-06 2024-05-22 삼성전자주식회사 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법
JP6929057B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 光電変換素子、撮像システム
KR102816650B1 (ko) * 2016-12-29 2025-06-04 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
JP7336206B2 (ja) * 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法
WO2021062661A1 (zh) 2019-09-30 2021-04-08 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
WO2021062663A1 (zh) 2019-09-30 2021-04-08 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
JP7198250B2 (ja) * 2020-10-12 2022-12-28 キヤノン株式会社 表示装置
WO2022138901A1 (ja) * 2020-12-25 2022-06-30 株式会社 Rosnes 撮像装置、または撮像装置を備えた電子機器
US12295178B2 (en) * 2021-01-19 2025-05-06 Visera Technologies Company Limited Image sensor
KR102650663B1 (ko) * 2021-09-15 2024-03-25 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치

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CN1487591A (zh) * 2002-10-04 2004-04-07 �ձ�����ƿ˿Ƽ���ʽ���� 提高生产效率及灵敏度的图像传感器
CN1885550A (zh) * 2005-06-24 2006-12-27 松下电器产业株式会社 固态成像装置
WO2009044924A1 (en) * 2007-10-03 2009-04-09 Canon Kabushiki Kaisha Photoelectric conversion device and imaging system
WO2009091484A1 (en) * 2007-12-28 2009-07-23 Hiok-Nam Tay Light guide array for an image sensor

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JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
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KR20100057302A (ko) * 2008-11-21 2010-05-31 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP5471117B2 (ja) * 2009-07-24 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法並びにカメラ
JP2011243753A (ja) 2010-05-18 2011-12-01 Panasonic Corp 固体撮像装置

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
CN1487591A (zh) * 2002-10-04 2004-04-07 �ձ�����ƿ˿Ƽ���ʽ���� 提高生产效率及灵敏度的图像传感器
CN1885550A (zh) * 2005-06-24 2006-12-27 松下电器产业株式会社 固态成像装置
WO2009044924A1 (en) * 2007-10-03 2009-04-09 Canon Kabushiki Kaisha Photoelectric conversion device and imaging system
WO2009091484A1 (en) * 2007-12-28 2009-07-23 Hiok-Nam Tay Light guide array for an image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
CN111816670A (zh) * 2019-04-12 2020-10-23 采钰科技股份有限公司 固态成像装置
CN113658963A (zh) * 2020-05-12 2021-11-16 采钰科技股份有限公司 固态成像装置

Also Published As

Publication number Publication date
US20120217377A1 (en) 2012-08-30
US20110102651A1 (en) 2011-05-05
BR112012010619A2 (pt) 2017-08-15
GB2484225A (en) 2012-04-04
MX2012005169A (es) 2012-09-12
SG179551A1 (en) 2012-05-30
GB201200090D0 (en) 2012-02-15
WO2011055344A1 (en) 2011-05-12
JP2013510424A (ja) 2013-03-21
DE112010004288T5 (de) 2013-01-03
GB2484225B (en) 2014-09-03
US8228408B2 (en) 2012-07-24
AU2010316634A1 (en) 2012-05-31

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Application publication date: 20120704