CN102544297B - 发光器件及其制造方法 - Google Patents

发光器件及其制造方法 Download PDF

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Publication number
CN102544297B
CN102544297B CN201110262851.XA CN201110262851A CN102544297B CN 102544297 B CN102544297 B CN 102544297B CN 201110262851 A CN201110262851 A CN 201110262851A CN 102544297 B CN102544297 B CN 102544297B
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CN
China
Prior art keywords
layer
light emitting
emitting device
ohmic
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110262851.XA
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English (en)
Chinese (zh)
Other versions
CN102544297A (zh
Inventor
丁焕熙
李尚烈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100130657A external-priority patent/KR101769047B1/ko
Priority claimed from KR1020100133432A external-priority patent/KR101103676B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102544297A publication Critical patent/CN102544297A/zh
Application granted granted Critical
Publication of CN102544297B publication Critical patent/CN102544297B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68—Details of reflectors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
CN201110262851.XA 2010-12-20 2011-08-31 发光器件及其制造方法 Active CN102544297B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0130657 2010-12-20
KR1020100130657A KR101769047B1 (ko) 2010-12-20 2010-12-20 발광소자 및 그 발광 소자의 제조 방법
KR1020100133432A KR101103676B1 (ko) 2010-12-23 2010-12-23 발광소자 및 그 발광 소자의 제조 방법
KR10-2010-0133432 2010-12-23

Publications (2)

Publication Number Publication Date
CN102544297A CN102544297A (zh) 2012-07-04
CN102544297B true CN102544297B (zh) 2016-08-31

Family

ID=44785273

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110262851.XA Active CN102544297B (zh) 2010-12-20 2011-08-31 发光器件及其制造方法

Country Status (5)

Country Link
US (1) US8916883B2 (https=)
EP (1) EP2466654B1 (https=)
JP (1) JP5999884B2 (https=)
CN (1) CN102544297B (https=)
TW (1) TWI553903B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10165669B2 (en) 2011-12-22 2018-12-25 Kyocera Corporation Wiring board and electronic device
KR101983774B1 (ko) * 2012-09-20 2019-05-29 엘지이노텍 주식회사 발광 소자
KR101988405B1 (ko) * 2013-01-30 2019-09-30 엘지이노텍 주식회사 발광소자
JP5818031B2 (ja) * 2013-03-21 2015-11-18 ウシオ電機株式会社 Ｌｅｄ素子
TW201613130A (en) * 2014-09-26 2016-04-01 High Power Optoelectronics Inc LED with reflective mirror protective layer and manufacturing method of the reflective mirror protective layer
KR102189133B1 (ko) * 2014-10-17 2020-12-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI710144B (zh) * 2015-02-17 2020-11-11 新世紀光電股份有限公司 具布拉格反射鏡之發光二極體及其製造方法
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
WO2020019326A1 (zh) * 2018-07-27 2020-01-30 天津三安光电有限公司 一种半导体发光元件
KR20250166205A (ko) * 2023-03-24 2025-11-27 소니 세미컨덕터 솔루션즈 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법 그리고 화상 표시 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101494263A (zh) * 2008-01-23 2009-07-29 晶元光电股份有限公司 发光元件
CN101800277A (zh) * 2009-02-10 2010-08-11 Lg伊诺特有限公司 发光器件和发光器件封装

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3448441B2 (ja) * 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
JP2003078162A (ja) * 2001-08-31 2003-03-14 Shin Etsu Handotai Co Ltd ＧａＰ系半導体発光素子
CN1820378A (zh) * 2004-07-12 2006-08-16 罗姆股份有限公司 半导体发光元件
TWI352437B (en) 2007-08-27 2011-11-11 Epistar Corp Optoelectronic semiconductor device
JP5189734B2 (ja) * 2006-01-24 2013-04-24 ローム株式会社 窒化物半導体発光素子
JP5153082B2 (ja) * 2006-03-24 2013-02-27 三洋電機株式会社 半導体素子
CN101009353B (zh) 2007-01-26 2010-07-21 北京太时芯光科技有限公司 具有电流输运增透窗口层和高反射图形转移衬底结构的发光二极管
CN102779918B (zh) * 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
DE102007029370A1 (de) 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US8124991B2 (en) 2007-07-26 2012-02-28 The Regents Of The University Of California Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR101382836B1 (ko) 2007-11-23 2014-04-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2265840B1 (en) 2008-03-14 2019-05-08 Damptech A/S Bearing for structures
KR100986461B1 (ko) 2008-05-08 2010-10-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI396809B (zh) * 2008-06-27 2013-05-21 Foxconn Tech Co Ltd 發光二極體燈具
KR100986963B1 (ko) 2008-07-08 2010-10-11 서울옵토디바이스주식회사 발광 소자 및 그 제조방법
JP2010027449A (ja) * 2008-07-22 2010-02-04 Asagi Create:Kk 照明装置及び照明器具
JP2010092903A (ja) * 2008-10-03 2010-04-22 Sharp Corp 窒化物系半導体発光素子の製造方法
KR20100130657A (ko) 2009-06-04 2010-12-14 신용진 고효율 배양장치
KR101081193B1 (ko) * 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986353B1 (ko) 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101494263A (zh) * 2008-01-23 2009-07-29 晶元光电股份有限公司 发光元件
CN101800277A (zh) * 2009-02-10 2010-08-11 Lg伊诺特有限公司 发光器件和发光器件封装

Also Published As

Publication number Publication date
US8916883B2 (en) 2014-12-23
CN102544297A (zh) 2012-07-04
TW201228018A (en) 2012-07-01
EP2466654A3 (en) 2014-01-01
TWI553903B (zh) 2016-10-11
JP2012134452A (ja) 2012-07-12
JP5999884B2 (ja) 2016-09-28
EP2466654B1 (en) 2017-02-15
US20110317433A1 (en) 2011-12-29
EP2466654A2 (en) 2012-06-20

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address