CN102543216A - 一种闪存的测试方法 - Google Patents
一种闪存的测试方法 Download PDFInfo
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- CN102543216A CN102543216A CN2010106197890A CN201010619789A CN102543216A CN 102543216 A CN102543216 A CN 102543216A CN 2010106197890 A CN2010106197890 A CN 2010106197890A CN 201010619789 A CN201010619789 A CN 201010619789A CN 102543216 A CN102543216 A CN 102543216A
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CN201010619789.0A CN102543216B (zh) | 2010-12-29 | 2010-12-29 | 一种闪存的测试方法 |
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CN102543216A true CN102543216A (zh) | 2012-07-04 |
CN102543216B CN102543216B (zh) | 2015-07-29 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103093834A (zh) * | 2013-01-28 | 2013-05-08 | 上海宏力半导体制造有限公司 | 闪存的可靠性测试方法 |
CN104568529A (zh) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Sem样品的制备方法 |
CN102890971B (zh) * | 2012-10-22 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 存储器的可靠性测试方法 |
CN108133732A (zh) * | 2017-12-20 | 2018-06-08 | 北京京存技术有限公司 | 闪存芯片的性能测试方法、装置、设备及存储介质 |
CN109308162A (zh) * | 2017-07-26 | 2019-02-05 | 北京兆易创新科技股份有限公司 | 闪存的优化装置、优化方法及设备 |
CN111489784A (zh) * | 2020-04-29 | 2020-08-04 | 上海华虹宏力半导体制造有限公司 | 嵌入式闪存失效的筛选方法 |
CN112540882A (zh) * | 2019-09-23 | 2021-03-23 | 深圳宏芯宇电子股份有限公司 | 闪存设备检测系统及闪存设备检测方法 |
Citations (6)
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CN1166887A (zh) * | 1994-09-29 | 1997-12-03 | 英特尔公司 | 用可变栅电压读出存储器的状态 |
US5724365A (en) * | 1996-05-24 | 1998-03-03 | Advanced Micro Devices, Inc. | Method of utilizing redundancy testing to substitute for main array programming and AC speed reads |
JP2003178597A (ja) * | 2001-12-11 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US20070159891A1 (en) * | 2006-01-12 | 2007-07-12 | Loc Tu | Trimming of analog voltages in flash memory devices |
CN101192449A (zh) * | 2006-11-27 | 2008-06-04 | 东部高科股份有限公司 | 用于调整闪存器件基准电压的方法和装置 |
US20080151661A1 (en) * | 2006-12-25 | 2008-06-26 | Hideyoshi Takai | Semiconductor integrated circuit device comprising mos transistor having charge storage layer and method for testing semiconductor memory device |
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2010
- 2010-12-29 CN CN201010619789.0A patent/CN102543216B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1166887A (zh) * | 1994-09-29 | 1997-12-03 | 英特尔公司 | 用可变栅电压读出存储器的状态 |
US5724365A (en) * | 1996-05-24 | 1998-03-03 | Advanced Micro Devices, Inc. | Method of utilizing redundancy testing to substitute for main array programming and AC speed reads |
JP2003178597A (ja) * | 2001-12-11 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US20070159891A1 (en) * | 2006-01-12 | 2007-07-12 | Loc Tu | Trimming of analog voltages in flash memory devices |
CN101192449A (zh) * | 2006-11-27 | 2008-06-04 | 东部高科股份有限公司 | 用于调整闪存器件基准电压的方法和装置 |
US20080151661A1 (en) * | 2006-12-25 | 2008-06-26 | Hideyoshi Takai | Semiconductor integrated circuit device comprising mos transistor having charge storage layer and method for testing semiconductor memory device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102890971B (zh) * | 2012-10-22 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 存储器的可靠性测试方法 |
CN103093834A (zh) * | 2013-01-28 | 2013-05-08 | 上海宏力半导体制造有限公司 | 闪存的可靠性测试方法 |
CN104568529A (zh) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Sem样品的制备方法 |
CN109308162A (zh) * | 2017-07-26 | 2019-02-05 | 北京兆易创新科技股份有限公司 | 闪存的优化装置、优化方法及设备 |
CN108133732A (zh) * | 2017-12-20 | 2018-06-08 | 北京京存技术有限公司 | 闪存芯片的性能测试方法、装置、设备及存储介质 |
CN112540882A (zh) * | 2019-09-23 | 2021-03-23 | 深圳宏芯宇电子股份有限公司 | 闪存设备检测系统及闪存设备检测方法 |
CN111489784A (zh) * | 2020-04-29 | 2020-08-04 | 上海华虹宏力半导体制造有限公司 | 嵌入式闪存失效的筛选方法 |
CN111489784B (zh) * | 2020-04-29 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | 嵌入式闪存失效的筛选方法 |
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