CN102543200A - 串联晶体管型一次可编程存储器的读取方法 - Google Patents
串联晶体管型一次可编程存储器的读取方法 Download PDFInfo
- Publication number
- CN102543200A CN102543200A CN2012100304277A CN201210030427A CN102543200A CN 102543200 A CN102543200 A CN 102543200A CN 2012100304277 A CN2012100304277 A CN 2012100304277A CN 201210030427 A CN201210030427 A CN 201210030427A CN 102543200 A CN102543200 A CN 102543200A
- Authority
- CN
- China
- Prior art keywords
- transistor
- programmable memory
- type disposable
- voltage
- disposable programmable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Read Only Memory (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100304277A CN102543200A (zh) | 2012-02-10 | 2012-02-10 | 串联晶体管型一次可编程存储器的读取方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100304277A CN102543200A (zh) | 2012-02-10 | 2012-02-10 | 串联晶体管型一次可编程存储器的读取方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102543200A true CN102543200A (zh) | 2012-07-04 |
Family
ID=46349890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012100304277A Pending CN102543200A (zh) | 2012-02-10 | 2012-02-10 | 串联晶体管型一次可编程存储器的读取方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102543200A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1211079A (zh) * | 1997-09-05 | 1999-03-17 | 三菱电机株式会社 | 非易失性半导体存储器 |
US5912842A (en) * | 1995-11-14 | 1999-06-15 | Programmable Microelectronics Corp. | Nonvolatile PMOS two transistor memory cell and array |
CN1416174A (zh) * | 2001-11-02 | 2003-05-07 | 力旺电子股份有限公司 | 可擦写可编程只读存储器 |
US20060244041A1 (en) * | 2005-04-28 | 2006-11-02 | Renesas Technology Corp. | Programmable nonvolatile memory and semiconductor integrated circuit device |
CN101441889A (zh) * | 2007-11-19 | 2009-05-27 | 上海华虹Nec电子有限公司 | Otp存储器单元及其读取和编程方法 |
-
2012
- 2012-02-10 CN CN2012100304277A patent/CN102543200A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5912842A (en) * | 1995-11-14 | 1999-06-15 | Programmable Microelectronics Corp. | Nonvolatile PMOS two transistor memory cell and array |
CN1211079A (zh) * | 1997-09-05 | 1999-03-17 | 三菱电机株式会社 | 非易失性半导体存储器 |
CN1416174A (zh) * | 2001-11-02 | 2003-05-07 | 力旺电子股份有限公司 | 可擦写可编程只读存储器 |
US20060244041A1 (en) * | 2005-04-28 | 2006-11-02 | Renesas Technology Corp. | Programmable nonvolatile memory and semiconductor integrated circuit device |
CN101441889A (zh) * | 2007-11-19 | 2009-05-27 | 上海华虹Nec电子有限公司 | Otp存储器单元及其读取和编程方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102651547B (zh) | 一种静电放电保护电路及包括该保护电路的显示装置 | |
CN110071105A (zh) | 静电放电防护电路、显示面板及静电放电防护结构 | |
CN101908380B (zh) | 非易失性存储装置的单元及具有单元的非易失性存储装置 | |
CN102611087A (zh) | 静电放电保护电路 | |
US8787096B1 (en) | N-well switching circuit | |
US8031506B2 (en) | One-time programmable memory cell | |
CN103312158B (zh) | 升压电路 | |
WO2012126434A3 (zh) | 数据处理的方法、闪存及终端 | |
CN103515941A (zh) | 静电放电保护电路、阵列基板和显示装置 | |
CN101814912B (zh) | 一种负电压电平转换电路 | |
KR20120122287A (ko) | 반도체 장치의 퓨즈회로 | |
TWI538105B (zh) | 一次性可編程儲存單元 | |
CN109933120A (zh) | 一种电压切换电路及芯片 | |
CN104993574B (zh) | 一种适用于otp存储器的电源切换电路 | |
CN102543200A (zh) | 串联晶体管型一次可编程存储器的读取方法 | |
US7697249B2 (en) | Voltage clamping circuits using MOS transistors and semiconductor chips having the same and methods of clamping voltages | |
CN103106921B (zh) | 用于行译码电路的电平位移器 | |
CN104008774A (zh) | 字线驱动器及相关方法 | |
CN111508544B (zh) | 一种受耐压限制的负高压到电源的切换电路 | |
US20120250235A1 (en) | Interface module with protection circuit and electronic device | |
CN102969703A (zh) | 一种具有自我esd保护的输入输出电路 | |
CN104979011A (zh) | 资料存储型闪存中优化读数据电路 | |
CN102394241A (zh) | 存储器单元 | |
CN105280632A (zh) | 一种静电防护电路及显示装置 | |
CN204808885U (zh) | 资料存储型闪存中优化读数据电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |