CN102533264B - 磷光体的制备方法和发光装置 - Google Patents
磷光体的制备方法和发光装置 Download PDFInfo
- Publication number
- CN102533264B CN102533264B CN201110397066.5A CN201110397066A CN102533264B CN 102533264 B CN102533264 B CN 102533264B CN 201110397066 A CN201110397066 A CN 201110397066A CN 102533264 B CN102533264 B CN 102533264B
- Authority
- CN
- China
- Prior art keywords
- metal
- precursor
- phosphorescent substance
- liquefied ammonia
- amide type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
- C01B21/0627—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with one or more rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
- C01B21/0826—Silicon aluminium oxynitrides, i.e. sialons
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
- C01B21/092—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms containing also one or more metal atoms
- C01B21/0923—Metal imides or amides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0122623 | 2010-12-03 | ||
KR1020100122623A KR20120061343A (ko) | 2010-12-03 | 2010-12-03 | 형광체 제조방법 및 발광 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102533264A CN102533264A (zh) | 2012-07-04 |
CN102533264B true CN102533264B (zh) | 2015-06-10 |
Family
ID=45093538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110397066.5A Expired - Fee Related CN102533264B (zh) | 2010-12-03 | 2011-12-02 | 磷光体的制备方法和发光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8592235B2 (zh) |
EP (1) | EP2460867B1 (zh) |
JP (1) | JP2012122068A (zh) |
KR (1) | KR20120061343A (zh) |
CN (1) | CN102533264B (zh) |
TW (1) | TWI450948B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6354325B2 (ja) * | 2014-05-21 | 2018-07-11 | 宇部興産株式会社 | 窒化物蛍光体粉末の製造方法、および顔料の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196178A (en) * | 1978-05-08 | 1980-04-01 | Ube Industries, Ltd. | Process for producing metallic nitride powder |
KR20000034331A (ko) * | 1998-11-30 | 2000-06-15 | 조태환 | 형광체의 제조방법 |
JP2005097011A (ja) * | 2003-09-22 | 2005-04-14 | Shoei Chem Ind Co | 酸窒化物の製造方法 |
JP2007106623A (ja) * | 2005-10-12 | 2007-04-26 | Taiheiyo Cement Corp | 金属アミド複合物およびその製造方法 |
EP2163593A1 (en) * | 2008-09-15 | 2010-03-17 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of nitride-based phosphors |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61171533A (ja) * | 1985-01-23 | 1986-08-02 | Shokubai Kasei Kogyo Kk | 微小球形粒子の製造方法 |
FR2694299B1 (fr) * | 1992-07-29 | 1994-09-09 | Rhone Poulenc Chimie | Nouveaux luminophores verts à base de phosphate mixte de lanthane, cérium et terbium, précurseur de ceux-ci et procédés de synthèse. |
JPH09274169A (ja) * | 1995-09-08 | 1997-10-21 | Nippon Telegr & Teleph Corp <Ntt> | 液晶微粒子分散媒体を用いた導波路型光制御方法および導波路型光制御用液晶光学素子 |
EP1904510A1 (en) * | 2005-07-14 | 2008-04-02 | Pfizer Products Incorporated | Process for forming amorphous azithromycin particles |
JP5315616B2 (ja) * | 2006-02-10 | 2013-10-16 | 三菱化学株式会社 | 発光装置、バックライト用白色発光体、及び画像表示装置 |
FR2904323B1 (fr) * | 2006-07-28 | 2008-10-31 | Rhodia Recherches & Tech | Luminophores coeur-coquille. |
DE102006051757A1 (de) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Leuchtstoffe |
JP2009057554A (ja) * | 2007-08-08 | 2009-03-19 | Mitsubishi Chemicals Corp | 蛍光体の製造方法及びその製造方法で得られる蛍光体、並びに、その蛍光体を用いた蛍光体含有組成物、発光装置、照明装置及び画像表示装置 |
JP4801024B2 (ja) * | 2007-09-03 | 2011-10-26 | 積水化学工業株式会社 | 床断熱構造及び床断熱工法 |
JP2009138081A (ja) * | 2007-12-05 | 2009-06-25 | Tokyo Univ Of Science | 微粒子分散溶液、当該微粒子分散溶液の製造方法、及びLnOX−LnX3複合体粒子の製造方法 |
JP5060504B2 (ja) * | 2009-03-25 | 2012-10-31 | 太平洋セメント株式会社 | 金属アミドの製造方法および金属アミド製造装置 |
JP4585043B1 (ja) * | 2009-11-12 | 2010-11-24 | 太平洋セメント株式会社 | 金属窒化物の製造方法 |
JP5651493B2 (ja) * | 2010-02-08 | 2015-01-14 | 太平洋セメント株式会社 | 多種アルカリ土類金属窒化物複合体の製造方法 |
WO2012053595A1 (ja) * | 2010-10-20 | 2012-04-26 | 三菱化学株式会社 | 共沈原料を用いた窒化物蛍光体の製造方法、窒化物蛍光体、及びその原料 |
-
2010
- 2010-12-03 KR KR1020100122623A patent/KR20120061343A/ko not_active Application Discontinuation
-
2011
- 2011-12-02 JP JP2011265224A patent/JP2012122068A/ja active Pending
- 2011-12-02 US US13/310,390 patent/US8592235B2/en not_active Expired - Fee Related
- 2011-12-02 TW TW100144344A patent/TWI450948B/zh not_active IP Right Cessation
- 2011-12-02 CN CN201110397066.5A patent/CN102533264B/zh not_active Expired - Fee Related
- 2011-12-05 EP EP11191838.9A patent/EP2460867B1/en not_active Not-in-force
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196178A (en) * | 1978-05-08 | 1980-04-01 | Ube Industries, Ltd. | Process for producing metallic nitride powder |
KR20000034331A (ko) * | 1998-11-30 | 2000-06-15 | 조태환 | 형광체의 제조방법 |
JP2005097011A (ja) * | 2003-09-22 | 2005-04-14 | Shoei Chem Ind Co | 酸窒化物の製造方法 |
JP2007106623A (ja) * | 2005-10-12 | 2007-04-26 | Taiheiyo Cement Corp | 金属アミド複合物およびその製造方法 |
EP2163593A1 (en) * | 2008-09-15 | 2010-03-17 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of nitride-based phosphors |
Non-Patent Citations (3)
Title |
---|
Low Temperature Precursor Route for Highly Efficient Spherically Shaped LED-Phosphors M2Si5N8:Eu2+(M=Eu, Sr, Ba);Martin Zeuner 等;《Chem. Mater.》;20081223;第21卷(第2期);1113-1117 * |
One-Pot Synthesis of Single-Source Precursors for Nanocrystalline LED Phosphors M2Si5N8:Eu2+(M=Sr, Ba);Martin Zeuner 等;《Chem. Mater.》;20090501;第21卷(第12期);2467-2473 * |
Preparation and catalytic properties of rare earth amides obtained by reactions of Eu or Yb metals with liquid ammonia;Hayao Imamura 等;《Journal of Alloys and Compounds》;20050613;第408-412卷;336-342 * |
Also Published As
Publication number | Publication date |
---|---|
EP2460867A2 (en) | 2012-06-06 |
TWI450948B (zh) | 2014-09-01 |
US8592235B2 (en) | 2013-11-26 |
TW201235448A (en) | 2012-09-01 |
JP2012122068A (ja) | 2012-06-28 |
KR20120061343A (ko) | 2012-06-13 |
EP2460867A3 (en) | 2013-11-06 |
CN102533264A (zh) | 2012-07-04 |
EP2460867B1 (en) | 2016-03-02 |
US20120138992A1 (en) | 2012-06-07 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121105 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121105 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung LED Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20161202 |