CN102482779B - 可粘合晶片表面的低应力镍磷/钯叠层 - Google Patents
可粘合晶片表面的低应力镍磷/钯叠层 Download PDFInfo
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- CN102482779B CN102482779B CN200980133177.6A CN200980133177A CN102482779B CN 102482779 B CN102482779 B CN 102482779B CN 200980133177 A CN200980133177 A CN 200980133177A CN 102482779 B CN102482779 B CN 102482779B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/1275—Next to Group VIII or IB metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP08166889.9 | 2008-10-17 | ||
EP08166889A EP2177646B1 (de) | 2008-10-17 | 2008-10-17 | Spannungsreduzierte Ni-P/Pd-Stapel für Waferoberfläche |
PCT/EP2009/062756 WO2010043502A1 (en) | 2008-10-17 | 2009-10-01 | Stress-reduced ni-p/pd stacks for bondable wafer surfaces |
Publications (2)
Publication Number | Publication Date |
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CN102482779A CN102482779A (zh) | 2012-05-30 |
CN102482779B true CN102482779B (zh) | 2014-06-18 |
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CN200980133177.6A Active CN102482779B (zh) | 2008-10-17 | 2009-10-01 | 可粘合晶片表面的低应力镍磷/钯叠层 |
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US (1) | US8986789B2 (de) |
EP (1) | EP2177646B1 (de) |
JP (1) | JP5665136B2 (de) |
KR (1) | KR101610780B1 (de) |
CN (1) | CN102482779B (de) |
AT (1) | ATE503037T1 (de) |
DE (1) | DE602008005748D1 (de) |
MY (1) | MY160304A (de) |
TW (1) | TWI460074B (de) |
WO (1) | WO2010043502A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010011269B4 (de) * | 2009-11-10 | 2014-02-13 | Ami Doduco Gmbh | Verfahren zum Abscheiden einer für das Drahtbonden geeigneten Palladiumschicht auf Leiterbahnen einer Schaltungsträgerplatte und Verwendung eines Palladiumbades in dem Verfahren |
US20120061710A1 (en) * | 2010-09-10 | 2012-03-15 | Toscano Lenora M | Method for Treating Metal Surfaces |
JP2012087386A (ja) * | 2010-10-21 | 2012-05-10 | Toyota Motor Corp | 無電解ニッケルめっき浴およびそれを用いた無電解ニッケルめっき法 |
EP2469992B1 (de) * | 2010-12-23 | 2015-02-11 | Atotech Deutschland GmbH | Verfahren zum Erhalten eines Palladiumflächenabschluss für die Kupferverdrahtung auf Druckleiterplatten und IC-Substraten |
US9783564B2 (en) | 2011-07-25 | 2017-10-10 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP2551375A1 (de) * | 2011-07-26 | 2013-01-30 | Atotech Deutschland GmbH | Stromlose Vernickelungsbadzusammensetzung |
TW201414857A (zh) * | 2012-10-02 | 2014-04-16 | Hon Hai Prec Ind Co Ltd | 鎳磷合金及模仁 |
DE102012111245A1 (de) * | 2012-11-21 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips |
EP2740818B1 (de) * | 2012-12-05 | 2016-03-30 | ATOTECH Deutschland GmbH | Verfahren zur herstellung von drahtbondbaren und lötbaren oberflächen auf edelmetallelektroden |
JP6025259B2 (ja) * | 2013-03-29 | 2016-11-16 | Jx金属株式会社 | めっき物 |
JP6199086B2 (ja) * | 2013-06-13 | 2017-09-20 | 東洋鋼鈑株式会社 | パラジウムめっき被覆材料、およびパラジウムめっき被覆材料の製造方法 |
WO2014208610A1 (ja) * | 2013-06-28 | 2014-12-31 | 日本軽金属株式会社 | 導電部材 |
JP6280754B2 (ja) * | 2014-01-24 | 2018-02-14 | 株式会社クオルテック | 配線基板、及び配線基板の製造方法 |
US9758874B2 (en) | 2014-04-10 | 2017-09-12 | Atotech Deutschland Gmbh | Plating bath composition and method for electroless plating of palladium |
US11685999B2 (en) * | 2014-06-02 | 2023-06-27 | Macdermid Acumen, Inc. | Aqueous electroless nickel plating bath and method of using the same |
CN104085149B (zh) * | 2014-06-18 | 2016-09-07 | 哈尔滨工程大学 | 黄铜-镀层复合物及其制备方法 |
JP5892629B2 (ja) * | 2014-11-10 | 2016-03-23 | 三恵技研工業株式会社 | 電磁波透過用金属被膜の製造方法 |
US20180209047A1 (en) * | 2015-07-17 | 2018-07-26 | Coventya, Inc. | Electroless nickel-phosphorous plating baths with reduced ion concentration and methods of use |
KR102274349B1 (ko) * | 2016-08-23 | 2021-07-07 | 아토테크더치랜드게엠베하 | 갈륨 니트라이드 반도체의 비-활성화 표면 상에 팔라듐을 직접 침착하는 방법 |
CN107761079B (zh) * | 2017-09-08 | 2019-08-13 | 华宇华源电子科技(深圳)有限公司 | 一种小间距pcb的沉镍钯金方法 |
CN109954500B (zh) * | 2017-12-25 | 2023-05-05 | 沈阳三聚凯特催化剂有限公司 | 一种铜基骨架复合膜型加氢催化剂和其制备方法以及应用 |
CN112996933B (zh) | 2018-11-06 | 2023-08-08 | 德国艾托特克公司 | 无电镍镀敷溶液 |
CN110420644A (zh) * | 2019-08-16 | 2019-11-08 | 广西氢朝能源科技有限公司 | 一种钯膜组件的制作方法及其在甲醇制氢反应器的应用 |
LT6899B (lt) | 2020-08-27 | 2022-04-11 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Vario paviršiaus cheminio nikeliavimo būdas, nenaudojant aktyvavimo paladžiu |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3685582A (en) * | 1971-01-14 | 1972-08-22 | Shell Oil Co | Electroless metal plating techniques for consolidation of incompetent formations |
US4424241A (en) * | 1982-09-27 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Electroless palladium process |
US6150186A (en) * | 1995-05-26 | 2000-11-21 | Formfactor, Inc. | Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive |
CN1827848A (zh) * | 2006-04-05 | 2006-09-06 | 南昌大学 | 无粗化的光纤表面化学镀镍磷合金工艺及其化学镀溶液 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3969554A (en) * | 1972-08-07 | 1976-07-13 | Photocircuits Division Of Kollmorgan Corporation | Precious metal sensitizing solutions |
US4122215A (en) * | 1976-12-27 | 1978-10-24 | Bell Telephone Laboratories, Incorporated | Electroless deposition of nickel on a masked aluminum surface |
US4169171A (en) * | 1977-11-07 | 1979-09-25 | Harold Narcus | Bright electroless plating process and plated articles produced thereby |
DE4415211A1 (de) | 1993-05-13 | 1994-12-08 | Atotech Deutschland Gmbh | Verfahren zur Abscheidung von Palladiumschichten |
DE4431847C5 (de) | 1994-09-07 | 2011-01-27 | Atotech Deutschland Gmbh | Substrat mit bondfähiger Beschichtung |
CN1314225A (zh) | 2000-02-18 | 2001-09-26 | 德克萨斯仪器股份有限公司 | 铜镀层集成电路焊点的结构和方法 |
WO2001080315A2 (en) * | 2000-04-12 | 2001-10-25 | Formfactor, Inc. | Shaped springs and methods of fabricating and using shaped springs |
JP2001358164A (ja) * | 2000-06-13 | 2001-12-26 | Ne Chemcat Corp | 無電解多層めっき皮膜が形成された電極及びその製造方法 |
JP3910363B2 (ja) | 2000-12-28 | 2007-04-25 | 富士通株式会社 | 外部接続端子 |
US6445069B1 (en) | 2001-01-22 | 2002-09-03 | Flip Chip Technologies, L.L.C. | Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor |
US6800121B2 (en) * | 2002-06-18 | 2004-10-05 | Atotech Deutschland Gmbh | Electroless nickel plating solutions |
JP2004200644A (ja) * | 2002-10-22 | 2004-07-15 | Kyocera Corp | 配線基板 |
JP2005072282A (ja) | 2003-08-25 | 2005-03-17 | Kyocera Corp | 配線基板 |
JP2005068445A (ja) * | 2003-08-25 | 2005-03-17 | Dowa Mining Co Ltd | 金属被覆された金属部材 |
JP2005183462A (ja) | 2003-12-16 | 2005-07-07 | Kyocera Corp | 配線基板 |
WO2006040847A1 (ja) * | 2004-10-14 | 2006-04-20 | Ibiden Co., Ltd. | プリント配線板及びプリント配線板の製造方法 |
JP2006128228A (ja) | 2004-10-26 | 2006-05-18 | Seiko Epson Corp | 導電膜の形成方法、配線基板、電子デバイスおよび電子機器 |
CN101151399B (zh) * | 2005-04-01 | 2010-12-29 | 日矿金属株式会社 | 镀覆基材 |
JP2007234248A (ja) * | 2006-02-27 | 2007-09-13 | Kyocera Corp | 蒸着マスク、及びそれを用いた有機elディスプレイの製造方法 |
JP5470673B2 (ja) | 2006-03-27 | 2014-04-16 | 日亜化学工業株式会社 | 半導体発光装置及び半導体発光素子 |
-
2008
- 2008-10-17 AT AT08166889T patent/ATE503037T1/de active
- 2008-10-17 DE DE602008005748T patent/DE602008005748D1/de active Active
- 2008-10-17 EP EP08166889A patent/EP2177646B1/de active Active
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2009
- 2009-10-01 WO PCT/EP2009/062756 patent/WO2010043502A1/en active Application Filing
- 2009-10-01 CN CN200980133177.6A patent/CN102482779B/zh active Active
- 2009-10-01 MY MYPI2011000603A patent/MY160304A/en unknown
- 2009-10-01 JP JP2011531435A patent/JP5665136B2/ja active Active
- 2009-10-01 KR KR1020117008342A patent/KR101610780B1/ko active IP Right Grant
- 2009-10-01 US US13/124,349 patent/US8986789B2/en active Active
- 2009-10-05 TW TW098133728A patent/TWI460074B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3685582A (en) * | 1971-01-14 | 1972-08-22 | Shell Oil Co | Electroless metal plating techniques for consolidation of incompetent formations |
US4424241A (en) * | 1982-09-27 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Electroless palladium process |
US6150186A (en) * | 1995-05-26 | 2000-11-21 | Formfactor, Inc. | Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive |
CN1827848A (zh) * | 2006-04-05 | 2006-09-06 | 南昌大学 | 无粗化的光纤表面化学镀镍磷合金工艺及其化学镀溶液 |
Also Published As
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TW201029842A (en) | 2010-08-16 |
EP2177646B1 (de) | 2011-03-23 |
JP5665136B2 (ja) | 2015-02-04 |
MY160304A (en) | 2017-02-28 |
TWI460074B (zh) | 2014-11-11 |
ATE503037T1 (de) | 2011-04-15 |
DE602008005748D1 (de) | 2011-05-05 |
US20110200842A1 (en) | 2011-08-18 |
CN102482779A (zh) | 2012-05-30 |
EP2177646A1 (de) | 2010-04-21 |
KR101610780B1 (ko) | 2016-04-08 |
KR20110073512A (ko) | 2011-06-29 |
US8986789B2 (en) | 2015-03-24 |
JP2012505964A (ja) | 2012-03-08 |
WO2010043502A1 (en) | 2010-04-22 |
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