CN107761079B - 一种小间距pcb的沉镍钯金方法 - Google Patents
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
Abstract
本发明涉及沉镍钯金方法技术领域，具体涉及一种小间距PCB的沉镍钯金方法，包括以下步骤：酸洗、水洗、微蚀、水洗、预浸、活化、水洗、后浸、水洗、化学镍、水洗、化学钯、水洗、化学金、水洗；在活化过程中，活化温度为78±3℃，活化时间为800±10S；在化学镍过程中，化学镍缸温度为63±2℃，化学镍缸寿命≤2.5MTO；在化学钯过程中，化学钯缸温度为43±3℃，化学钯缸寿命≤3MTO。本发明的发明目的在于提供一种小间距PCB的沉镍钯金方法，采用本发明提供的技术方案解决了现有小间距PCB在正常沉镍钯金的过程中产生渗金、肥边等不良的技术问题。
Description
技术领域
本发明涉及沉镍钯金方法技术领域，具体涉及一种小间距PCB的沉镍钯金方法。
背景技术
化学镍金，又称化镍金、沉镍金或者无电镍金，是通过化学反应在铜的表面置换钯再在钯核的基础上化学镀上一层镍磷合金层，然后再通过置换反应在镍的表面镀上一层金。
常规的沉镍钯金产品，一般焊盘在7mil以上，PAD与PAD间距在6mil以上，符合此设计的产品在沉镍钯金时，渗金、钯离子残留导电、肥边现象基本上不没有，产品批量良率在99％以上；
随着产品的精细化设计与制作，生产PCB厂商的制程能力要求可以快速响应，以满足产品精细化需求。光通讯产品的客户所设计的焊盘及间距已从常规的PAD与间距缩减，焊盘缩小到2.87mil，间距缩小到3mil，满足2mil金线的焊接。
对于焊盘与线间距非常小的PCB板，IC为全部开通窗(阻焊不覆盖油墨)，小间距、小焊盘的板在正常沉镍钯金的过程中产生渗金、肥边(线路或焊盘增大)，导致客户无法使用。
发明内容
本发明的发明目的在于提供一种小间距PCB的沉镍钯金方法，采用本发明提供的技术方案解决了现有小间距PCB在正常沉镍钯金的过程中产生渗金、肥边等不良的技术问题。
为了解决上述技术问题，本发明提供一种小间距PCB的沉镍钯金方法，包括以下步骤：酸洗、水洗、微蚀、水洗、预浸、活化、水洗、后浸、水洗、化学镍、水洗、化学钯、水洗、化学金、水洗；
在活化过程中，活化温度为78±3℃，活化时间为800±10S；
在化学镍过程中，化学镍缸温度为63±2℃，化学镍缸寿命≤2.5MTO；
在化学钯过程中，化学钯缸温度为43±3℃，化学钯缸寿命≤3MTO。
优选的，在活化过程中，活化缸寿命为3000㎡。
优选的，在化学镍过程中，化学镍缸时间为2100S。
优选的，在化学钯过程中，化学钯缸时间为1800S。
优选的，在化学镍与化学钯后的水洗过程中，采用流动的纯水。
优选的，所述纯水的水流量为6-12L/min。
由以上发明内容可知，本发明提供的技术方案具有以下有益效果：通过调整活化药水的温度与时间、化学镍缸的温度与使用寿命、钯缸的温度与使用寿命，适合生产小焊盘、小间距的沉镍钯金产品，符合了厂内的制程能力及客户品质要求，并且产品不良率由67％下降到8％，有效提高了产品品质。
具体实施方式
下面对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
由于小间距、小焊盘的板在正常沉镍钯金的过程中产生渗金、肥边(线路或焊盘增大)，导致客户无法使用。
本实施例提供一种小间距PCB的沉镍钯金方法，包括以下步骤：酸洗、水洗、微蚀、水洗、预浸、活化、水洗、后浸、水洗、化学镍、水洗、化学钯、水洗、化学金、水洗。
如下文表格中所示，为了解决上述技术问题，本实施例提供的沉镍钯金方法对活化过程中的药水温度与时间、化学镍缸的温度与使用寿命、钯缸的温度与使用寿命均作出了相应的调整，使之适用于小间距PCB的沉镍钯金。具体的，在活化过程中，活化温度为78±3℃，活化时间为800±10S；在化学镍过程中，化学镍缸温度为63±2℃，化学镍缸寿命≤2.5MTO；在化学钯过程中，化学钯缸温度为43±3℃，化学钯缸寿命≤3MTO。上述技术参数作出了缩小范围的修改。
另外，在活化过程中，活化缸寿命为3000㎡。在化学镍过程中，化学镍缸时间为2100S。在化学钯过程中，化学钯缸时间为1800S。上述技术参数则与原有技术参数相同。
并且在化学镍与化学钯后的水洗过程中，采用流动的纯水。纯水的水流量为6-12L/min。
生产金2u”,钯5”,镍100-200u”时的原参数与新参数表：
在此生产流程中，活化需控制温度、活化时间、活化药水的寿命这几项关键参数；化学镍与化学钯同样需要控制操作温度、化学处理时间及镍缸与钯缸的使用寿命(MTO)；化学镍及化学钯后的水洗需采用纯水，且为活水(水流量为6-12L/min)。
本实施例提供的沉镍钯金方法通过调整活化药水的温度与时间、化学镍缸的温度与使用寿命、钯缸的温度与使用寿命，适合生产小焊盘、小间距的沉镍钯金产品，符合了厂内的制程能力及客户品质要求，并且产品不良率由67％下降到8％，有效提高了产品品质。
以上所述实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。
Claims (6)
1.一种小间距PCB的沉镍钯金方法，其特征在于：包括以下步骤：酸洗、水洗、微蚀、水洗、预浸、活化、水洗、后浸、水洗、化学镍、水洗、化学钯、水洗、化学金、水洗；
在活化过程中，活化温度为78±3℃，活化时间为800±10S；
在化学镍过程中，化学镍缸温度为63±2℃，化学镍缸寿命≤2.5MTO；
在化学钯过程中，化学钯缸温度为43±3℃，化学钯缸寿命≤3MTO。
2.根据权利要求1所述的一种小间距PCB的沉镍钯金方法，其特征在于：在活化过程中，活化缸寿命为3000㎡。
3.根据权利要求2所述的一种小间距PCB的沉镍钯金方法，其特征在于：在化学镍过程中，化学镍缸时间为2100S。
4.根据权利要求3所述的一种小间距PCB的沉镍钯金方法，其特征在于：在化学钯过程中，化学钯缸时间为1800S。
5.根据权利要求4所述的一种小间距PCB的沉镍钯金方法，其特征在于：在化学镍与化学钯后的水洗过程中，采用流动的纯水。
6.根据权利要求5所述的一种小间距PCB的沉镍钯金方法，其特征在于：所述纯水的水流量为6-12L/min。
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| CN104419916A (zh) * | 2013-08-26 | 2015-03-18 | 深圳崇达多层线路板有限公司 | 镀厚钯的化学镍钯金镀层的制作方法 |
| KR101507452B1 (ko) * | 2013-08-27 | 2015-03-31 | 한국생산기술연구원 | Pcb 제조를 위한 무전해 니켈-팔라듐-금 도금 방법 |
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