CN102479899A - 第iii族氮化物半导体发光器件及其制造方法 - Google Patents

第iii族氮化物半导体发光器件及其制造方法 Download PDF

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Publication number
CN102479899A
CN102479899A CN2011103736282A CN201110373628A CN102479899A CN 102479899 A CN102479899 A CN 102479899A CN 2011103736282 A CN2011103736282 A CN 2011103736282A CN 201110373628 A CN201110373628 A CN 201110373628A CN 102479899 A CN102479899 A CN 102479899A
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China
Prior art keywords
stripe pattern
nitride semiconductor
group iii
iii nitride
emitting device
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Pending
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CN2011103736282A
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Chinese (zh)
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奥野浩司
宫崎敦嗣
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Publication of CN102479899A publication Critical patent/CN102479899A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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CN2011103736282A 2010-11-24 2011-11-22 第iii族氮化物半导体发光器件及其制造方法 Pending CN102479899A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010261166A JP2012114204A (ja) 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2010-261166 2010-11-24

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CN102479899A true CN102479899A (zh) 2012-05-30

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US (1) US20120126241A1 (enExample)
JP (1) JP2012114204A (enExample)
CN (1) CN102479899A (enExample)
TW (1) TW201234653A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104969367A (zh) * 2013-02-11 2015-10-07 皇家飞利浦有限公司 发光器件和用于制造发光器件的方法
CN105720153A (zh) * 2016-04-11 2016-06-29 厦门乾照光电股份有限公司 一种提高背光源亮度的衬底
CN113517379A (zh) * 2021-06-30 2021-10-19 福建晶安光电有限公司 一种图形化衬底及其制备方法、led芯片

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573632B2 (ja) * 2010-11-25 2014-08-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP5811009B2 (ja) 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
JP6020357B2 (ja) 2013-05-31 2016-11-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
JP6550926B2 (ja) 2014-05-30 2019-07-31 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
TWI640104B (zh) * 2014-05-30 2018-11-01 日商日亞化學工業股份有限公司 氮化物半導體元件及其製造方法
US9773946B2 (en) 2015-02-18 2017-09-26 Nichia Corporation Light-emitting element comprising a partitioned sapphire substrate
JP6798452B2 (ja) * 2017-08-23 2020-12-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP6783990B2 (ja) * 2017-09-07 2020-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030157738A1 (en) * 1999-07-27 2003-08-21 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
CN1529915A (zh) * 2001-07-24 2004-09-15 ���ǻ�ѧ��ҵ��ʽ���� 具有形成凹凸的基板的半导体发光元件
US20080102549A1 (en) * 2006-10-31 2008-05-01 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor light emitting device
US20080230793A1 (en) * 2006-02-09 2008-09-25 Seoul Opto Device Co., Ltd. Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same
JP2009203151A (ja) * 2008-01-29 2009-09-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体の形成されたウエハ及びｉｉｉ族窒化物系化合物半導体素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3166152B1 (en) * 2003-08-19 2020-04-15 Nichia Corporation Semiconductor light emitting diode and method of manufacturing its substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030157738A1 (en) * 1999-07-27 2003-08-21 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
CN1529915A (zh) * 2001-07-24 2004-09-15 ���ǻ�ѧ��ҵ��ʽ���� 具有形成凹凸的基板的半导体发光元件
US20080230793A1 (en) * 2006-02-09 2008-09-25 Seoul Opto Device Co., Ltd. Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same
US20080102549A1 (en) * 2006-10-31 2008-05-01 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor light emitting device
JP2009203151A (ja) * 2008-01-29 2009-09-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体の形成されたウエハ及びｉｉｉ族窒化物系化合物半導体素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104969367A (zh) * 2013-02-11 2015-10-07 皇家飞利浦有限公司 发光器件和用于制造发光器件的方法
CN104969367B (zh) * 2013-02-11 2019-04-16 亮锐控股有限公司 发光器件和用于制造发光器件的方法
CN105720153A (zh) * 2016-04-11 2016-06-29 厦门乾照光电股份有限公司 一种提高背光源亮度的衬底
CN113517379A (zh) * 2021-06-30 2021-10-19 福建晶安光电有限公司 一种图形化衬底及其制备方法、led芯片

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TW201234653A (en) 2012-08-16
US20120126241A1 (en) 2012-05-24
JP2012114204A (ja) 2012-06-14

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Application publication date: 20120530