CN102479899A - 第iii族氮化物半导体发光器件及其制造方法 - Google Patents
第iii族氮化物半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN102479899A CN102479899A CN2011103736282A CN201110373628A CN102479899A CN 102479899 A CN102479899 A CN 102479899A CN 2011103736282 A CN2011103736282 A CN 2011103736282A CN 201110373628 A CN201110373628 A CN 201110373628A CN 102479899 A CN102479899 A CN 102479899A
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- CN
- China
- Prior art keywords
- stripe pattern
- nitride semiconductor
- group iii
- iii nitride
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 59
- 239000010980 sapphire Substances 0.000 claims abstract description 59
- 238000000605 extraction Methods 0.000 abstract description 23
- 230000001747 exhibiting effect Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 13
- 230000001902 propagating effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- NRQNMMBQPIGPTB-UHFFFAOYSA-N methylaluminum Chemical compound [CH3].[Al] NRQNMMBQPIGPTB-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010261166A JP2012114204A (ja) | 2010-11-24 | 2010-11-24 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP2010-261166 | 2010-11-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102479899A true CN102479899A (zh) | 2012-05-30 |
Family
ID=46063496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103736282A Pending CN102479899A (zh) | 2010-11-24 | 2011-11-22 | 第iii族氮化物半导体发光器件及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120126241A1 (enExample) |
| JP (1) | JP2012114204A (enExample) |
| CN (1) | CN102479899A (enExample) |
| TW (1) | TW201234653A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104969367A (zh) * | 2013-02-11 | 2015-10-07 | 皇家飞利浦有限公司 | 发光器件和用于制造发光器件的方法 |
| CN105720153A (zh) * | 2016-04-11 | 2016-06-29 | 厦门乾照光电股份有限公司 | 一种提高背光源亮度的衬底 |
| CN113517379A (zh) * | 2021-06-30 | 2021-10-19 | 福建晶安光电有限公司 | 一种图形化衬底及其制备方法、led芯片 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5573632B2 (ja) * | 2010-11-25 | 2014-08-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP5811009B2 (ja) | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| JP6020357B2 (ja) | 2013-05-31 | 2016-11-02 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| TWI640104B (zh) * | 2014-05-30 | 2018-11-01 | 日商日亞化學工業股份有限公司 | 氮化物半導體元件及其製造方法 |
| JP6550926B2 (ja) | 2014-05-30 | 2019-07-31 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
| US9773946B2 (en) | 2015-02-18 | 2017-09-26 | Nichia Corporation | Light-emitting element comprising a partitioned sapphire substrate |
| JP6798452B2 (ja) * | 2017-08-23 | 2020-12-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| JP6783990B2 (ja) * | 2017-09-07 | 2020-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157738A1 (en) * | 1999-07-27 | 2003-08-21 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| CN1529915A (zh) * | 2001-07-24 | 2004-09-15 | ���ǻ�ѧ��ҵ��ʽ���� | 具有形成凹凸的基板的半导体发光元件 |
| US20080102549A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
| US20080230793A1 (en) * | 2006-02-09 | 2008-09-25 | Seoul Opto Device Co., Ltd. | Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same |
| JP2009203151A (ja) * | 2008-01-29 | 2009-09-10 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体の形成されたウエハ及びｉｉｉ族窒化物系化合物半導体素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005018008A1 (ja) * | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
-
2010
- 2010-11-24 JP JP2010261166A patent/JP2012114204A/ja active Pending
-
2011
- 2011-11-08 TW TW100140784A patent/TW201234653A/zh unknown
- 2011-11-22 CN CN2011103736282A patent/CN102479899A/zh active Pending
- 2011-11-22 US US13/302,983 patent/US20120126241A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157738A1 (en) * | 1999-07-27 | 2003-08-21 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| CN1529915A (zh) * | 2001-07-24 | 2004-09-15 | ���ǻ�ѧ��ҵ��ʽ���� | 具有形成凹凸的基板的半导体发光元件 |
| US20080230793A1 (en) * | 2006-02-09 | 2008-09-25 | Seoul Opto Device Co., Ltd. | Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same |
| US20080102549A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
| JP2009203151A (ja) * | 2008-01-29 | 2009-09-10 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体の形成されたウエハ及びｉｉｉ族窒化物系化合物半導体素子 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104969367A (zh) * | 2013-02-11 | 2015-10-07 | 皇家飞利浦有限公司 | 发光器件和用于制造发光器件的方法 |
| CN104969367B (zh) * | 2013-02-11 | 2019-04-16 | 亮锐控股有限公司 | 发光器件和用于制造发光器件的方法 |
| CN105720153A (zh) * | 2016-04-11 | 2016-06-29 | 厦门乾照光电股份有限公司 | 一种提高背光源亮度的衬底 |
| CN113517379A (zh) * | 2021-06-30 | 2021-10-19 | 福建晶安光电有限公司 | 一种图形化衬底及其制备方法、led芯片 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012114204A (ja) | 2012-06-14 |
| US20120126241A1 (en) | 2012-05-24 |
| TW201234653A (en) | 2012-08-16 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120530 |