JP2012114204A5 - - Google Patents
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- Publication number
- JP2012114204A5 JP2012114204A5 JP2010261166A JP2010261166A JP2012114204A5 JP 2012114204 A5 JP2012114204 A5 JP 2012114204A5 JP 2010261166 A JP2010261166 A JP 2010261166A JP 2010261166 A JP2010261166 A JP 2010261166A JP 2012114204 A5 JP2012114204 A5 JP 2012114204A5
- Authority
- JP
- Japan
- Prior art keywords
- shape
- sapphire substrate
- stripe
- groove
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052594 sapphire Inorganic materials 0.000 description 46
- 239000010980 sapphire Substances 0.000 description 46
- 239000000758 substrate Substances 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 27
- 150000004767 nitrides Chemical class 0.000 description 25
- 238000000605 extraction Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010261166A JP2012114204A (ja) | 2010-11-24 | 2010-11-24 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| TW100140784A TW201234653A (en) | 2010-11-24 | 2011-11-08 | Group III nitride semiconductor light-emitting device |
| US13/302,983 US20120126241A1 (en) | 2010-11-24 | 2011-11-22 | Group iii nitride semiconductor light-emitting device and production method therefor |
| CN2011103736282A CN102479899A (zh) | 2010-11-24 | 2011-11-22 | 第iii族氮化物半导体发光器件及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010261166A JP2012114204A (ja) | 2010-11-24 | 2010-11-24 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012114204A JP2012114204A (ja) | 2012-06-14 |
| JP2012114204A5 true JP2012114204A5 (enExample) | 2013-04-18 |
Family
ID=46063496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010261166A Pending JP2012114204A (ja) | 2010-11-24 | 2010-11-24 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120126241A1 (enExample) |
| JP (1) | JP2012114204A (enExample) |
| CN (1) | CN102479899A (enExample) |
| TW (1) | TW201234653A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5573632B2 (ja) * | 2010-11-25 | 2014-08-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP5811009B2 (ja) | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| KR102120264B1 (ko) | 2013-02-11 | 2020-06-09 | 루미리즈 홀딩 비.브이. | 발광 디바이스 및 발광 디바이스를 제조하기 위한 방법 |
| JP6020357B2 (ja) | 2013-05-31 | 2016-11-02 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| TWI640104B (zh) * | 2014-05-30 | 2018-11-01 | 日商日亞化學工業股份有限公司 | 氮化物半導體元件及其製造方法 |
| JP6550926B2 (ja) | 2014-05-30 | 2019-07-31 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
| US9773946B2 (en) | 2015-02-18 | 2017-09-26 | Nichia Corporation | Light-emitting element comprising a partitioned sapphire substrate |
| CN105720153A (zh) * | 2016-04-11 | 2016-06-29 | 厦门乾照光电股份有限公司 | 一种提高背光源亮度的衬底 |
| JP6798452B2 (ja) * | 2017-08-23 | 2020-12-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| JP6783990B2 (ja) * | 2017-09-07 | 2020-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法 |
| CN113517379B (zh) * | 2021-06-30 | 2024-12-20 | 福建晶安光电有限公司 | 一种图形化衬底及其制备方法、led芯片 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6580098B1 (en) * | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| WO2005018008A1 (ja) * | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
| KR100659373B1 (ko) * | 2006-02-09 | 2006-12-19 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드 |
| KR101262226B1 (ko) * | 2006-10-31 | 2013-05-15 | 삼성전자주식회사 | 반도체 발광 소자의 제조방법 |
| JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
-
2010
- 2010-11-24 JP JP2010261166A patent/JP2012114204A/ja active Pending
-
2011
- 2011-11-08 TW TW100140784A patent/TW201234653A/zh unknown
- 2011-11-22 CN CN2011103736282A patent/CN102479899A/zh active Pending
- 2011-11-22 US US13/302,983 patent/US20120126241A1/en not_active Abandoned
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