JP2012114204A - Ｉｉｉ族窒化物半導体発光素子およびその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体発光素子およびその製造方法 Download PDF

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Publication number
JP2012114204A
JP2012114204A JP2010261166A JP2010261166A JP2012114204A JP 2012114204 A JP2012114204 A JP 2012114204A JP 2010261166 A JP2010261166 A JP 2010261166A JP 2010261166 A JP2010261166 A JP 2010261166A JP 2012114204 A JP2012114204 A JP 2012114204A
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Prior art keywords
shape
nitride semiconductor
iii nitride
sapphire substrate
semiconductor light
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JP2010261166A
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English (en)
Japanese (ja)
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JP2012114204A5 (enExample
Inventor
Koji Okuno
浩司 奥野
Atsushi Miyazaki
敦嗣 宮崎
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2010261166A priority Critical patent/JP2012114204A/ja
Priority to TW100140784A priority patent/TW201234653A/zh
Priority to US13/302,983 priority patent/US20120126241A1/en
Priority to CN2011103736282A priority patent/CN102479899A/zh
Publication of JP2012114204A publication Critical patent/JP2012114204A/ja
Publication of JP2012114204A5 publication Critical patent/JP2012114204A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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JP2010261166A 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法 Pending JP2012114204A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010261166A JP2012114204A (ja) 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
TW100140784A TW201234653A (en) 2010-11-24 2011-11-08 Group III nitride semiconductor light-emitting device
US13/302,983 US20120126241A1 (en) 2010-11-24 2011-11-22 Group iii nitride semiconductor light-emitting device and production method therefor
CN2011103736282A CN102479899A (zh) 2010-11-24 2011-11-22 第iii族氮化物半导体发光器件及其制造方法

Applications Claiming Priority (1)

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JP2010261166A JP2012114204A (ja) 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

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JP2012114204A true JP2012114204A (ja) 2012-06-14
JP2012114204A5 JP2012114204A5 (enExample) 2013-04-18

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JP2010261166A Pending JP2012114204A (ja) 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

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US (1) US20120126241A1 (enExample)
JP (1) JP2012114204A (enExample)
CN (1) CN102479899A (enExample)
TW (1) TW201234653A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014234324A (ja) * 2013-05-31 2014-12-15 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
EP2950356A1 (en) 2014-05-30 2015-12-02 Nichia Corporation Nitride semiconductor element and method for manufacturing the same
EP3059766A1 (en) 2015-02-18 2016-08-24 Nichia Corporation Light-emitting element
US9806232B2 (en) 2014-05-30 2017-10-31 Nichia Corporation Nitride semiconductor element and method for manufacturing the same
US9837494B2 (en) 2012-03-30 2017-12-05 Toyoda Gosei Co., Ltd. Production method for group III nitride semiconductor and group III nitride semiconductor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573632B2 (ja) * 2010-11-25 2014-08-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR102120264B1 (ko) 2013-02-11 2020-06-09 루미리즈 홀딩 비.브이. 발광 디바이스 및 발광 디바이스를 제조하기 위한 방법
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
CN105720153A (zh) * 2016-04-11 2016-06-29 厦门乾照光电股份有限公司 一种提高背光源亮度的衬底
JP6798452B2 (ja) * 2017-08-23 2020-12-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP6783990B2 (ja) * 2017-09-07 2020-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法
CN113517379B (zh) * 2021-06-30 2024-12-20 福建晶安光电有限公司 一种图形化衬底及其制备方法、led芯片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009526397A (ja) * 2006-02-09 2009-07-16 ソウル オプト デバイス カンパニー リミテッド パターニングされた発光ダイオード用基板及びそれを採用する発光ダイオード

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580098B1 (en) * 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009526397A (ja) * 2006-02-09 2009-07-16 ソウル オプト デバイス カンパニー リミテッド パターニングされた発光ダイオード用基板及びそれを採用する発光ダイオード

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9837494B2 (en) 2012-03-30 2017-12-05 Toyoda Gosei Co., Ltd. Production method for group III nitride semiconductor and group III nitride semiconductor
JP2014234324A (ja) * 2013-05-31 2014-12-15 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
US9209021B2 (en) 2013-05-31 2015-12-08 Toyoda Gosei Co., Ltd. Method for producing Group III nitride semiconductor and Group III nitride semiconductor
EP2950356A1 (en) 2014-05-30 2015-12-02 Nichia Corporation Nitride semiconductor element and method for manufacturing the same
US9806232B2 (en) 2014-05-30 2017-10-31 Nichia Corporation Nitride semiconductor element and method for manufacturing the same
RU2663684C2 (ru) * 2014-05-30 2018-08-08 Нития Корпорейшн Нитридный полупроводниковый элемент и способ его производства
US10263152B2 (en) 2014-05-30 2019-04-16 Nichia Corporation Nitride semiconductor element and method for manufacturing the same
EP3059766A1 (en) 2015-02-18 2016-08-24 Nichia Corporation Light-emitting element
US9773946B2 (en) 2015-02-18 2017-09-26 Nichia Corporation Light-emitting element comprising a partitioned sapphire substrate
EP3327798A1 (en) 2015-02-18 2018-05-30 Nichia Corporation Light-emitting element
US10461222B2 (en) 2015-02-18 2019-10-29 Nichia Corporation Light-emitting element comprising sapphire substrate with convex portions

Also Published As

Publication number Publication date
CN102479899A (zh) 2012-05-30
US20120126241A1 (en) 2012-05-24
TW201234653A (en) 2012-08-16

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