CN102479817A - 一种垂直双扩散金属氧化物半导体场效应管结构 - Google Patents
一种垂直双扩散金属氧化物半导体场效应管结构 Download PDFInfo
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105304492A (zh) * | 2014-07-30 | 2016-02-03 | 北大方正集团有限公司 | 一种半导体器件及其制造方法 |
CN106206300A (zh) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | 垂直双扩散金属-氧化物半导体场效应晶体管及加工方法 |
CN110429131A (zh) * | 2019-08-05 | 2019-11-08 | 安徽省祁门县黄山电器有限责任公司 | 一种具有高开关速度的平面栅器件结构及其制造方法 |
CN115548101A (zh) * | 2022-11-25 | 2022-12-30 | 浙江大学 | 一种碳化硅mosfet晶体管器件 |
Citations (6)
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US5272103A (en) * | 1991-02-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof |
JPH0669507A (ja) * | 1992-05-22 | 1994-03-11 | Nec Corp | パワーmosfet |
TW544932B (en) * | 2000-10-31 | 2003-08-01 | Fuji Electric Co Ltd | Semiconductor device |
US20040227194A1 (en) * | 2003-05-13 | 2004-11-18 | Shekar Mallikarjunaswamy | Increasing switching speed of geometric construction gate MOSFET structures |
CN101490847A (zh) * | 2006-05-31 | 2009-07-22 | 万国半导体股份有限公司 | 平面分离栅极高性能金属氧化物半导体场效应晶体管结构及制造方法 |
CN101692462A (zh) * | 2009-10-14 | 2010-04-07 | 上海宏力半导体制造有限公司 | 一种垂直双扩散mos晶体管结构 |
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2010
- 2010-11-30 CN CN201010565520.9A patent/CN102479817B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272103A (en) * | 1991-02-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof |
JPH0669507A (ja) * | 1992-05-22 | 1994-03-11 | Nec Corp | パワーmosfet |
TW544932B (en) * | 2000-10-31 | 2003-08-01 | Fuji Electric Co Ltd | Semiconductor device |
US20040227194A1 (en) * | 2003-05-13 | 2004-11-18 | Shekar Mallikarjunaswamy | Increasing switching speed of geometric construction gate MOSFET structures |
CN101490847A (zh) * | 2006-05-31 | 2009-07-22 | 万国半导体股份有限公司 | 平面分离栅极高性能金属氧化物半导体场效应晶体管结构及制造方法 |
CN101692462A (zh) * | 2009-10-14 | 2010-04-07 | 上海宏力半导体制造有限公司 | 一种垂直双扩散mos晶体管结构 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105304492A (zh) * | 2014-07-30 | 2016-02-03 | 北大方正集团有限公司 | 一种半导体器件及其制造方法 |
CN106206300A (zh) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | 垂直双扩散金属-氧化物半导体场效应晶体管及加工方法 |
CN110429131A (zh) * | 2019-08-05 | 2019-11-08 | 安徽省祁门县黄山电器有限责任公司 | 一种具有高开关速度的平面栅器件结构及其制造方法 |
CN115548101A (zh) * | 2022-11-25 | 2022-12-30 | 浙江大学 | 一种碳化硅mosfet晶体管器件 |
CN115548101B (zh) * | 2022-11-25 | 2023-03-10 | 浙江大学 | 一种碳化硅mosfet晶体管器件 |
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CN102479817B (zh) | 2015-04-22 |
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Effective date of registration: 20191231 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |