CN102473825B - 发光二极管和用于制造发光二极管的方法 - Google Patents

发光二极管和用于制造发光二极管的方法 Download PDF

Info

Publication number
CN102473825B
CN102473825B CN201080031876.2A CN201080031876A CN102473825B CN 102473825 B CN102473825 B CN 102473825B CN 201080031876 A CN201080031876 A CN 201080031876A CN 102473825 B CN102473825 B CN 102473825B
Authority
CN
China
Prior art keywords
light
emitting diode
supporting mass
reflecting element
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080031876.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN102473825A (zh
Inventor
格特鲁德·克劳特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102473825A publication Critical patent/CN102473825A/zh
Application granted granted Critical
Publication of CN102473825B publication Critical patent/CN102473825B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
CN201080031876.2A 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法 Expired - Fee Related CN102473825B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033287.1 2009-07-15
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2010/059217 WO2011006754A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (2)

Publication Number Publication Date
CN102473825A CN102473825A (zh) 2012-05-23
CN102473825B true CN102473825B (zh) 2015-02-25

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080031876.2A Expired - Fee Related CN102473825B (zh) 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法

Country Status (7)

Country Link
US (1) US8581288B2 (enExample)
EP (1) EP2454765A1 (enExample)
JP (1) JP5685249B2 (enExample)
KR (1) KR101649287B1 (enExample)
CN (1) CN102473825B (enExample)
DE (1) DE102009033287A1 (enExample)
WO (1) WO2011006754A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
US9142747B2 (en) 2011-11-17 2015-09-22 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
CN105684174B (zh) * 2013-11-07 2018-10-09 亮锐控股有限公司 用于led的具有包围led的全内反射层的衬底
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) * 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) * 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
CN113228312B (zh) 2018-12-27 2024-08-13 波主有限公司 半导体发光器件
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
US11990574B2 (en) * 2019-03-08 2024-05-21 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
WO2021208264A1 (zh) * 2020-04-17 2021-10-21 宁波升谱光电股份有限公司 一种紫外led器件
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
DE112024000872T5 (de) * 2023-05-17 2025-12-11 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996021168A1 (en) * 1995-01-06 1996-07-11 W.L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
WO2003038912A2 (de) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1934715A (zh) * 2004-03-23 2007-03-21 奥斯兰姆奥普托半导体有限责任公司 具有多部件的壳体的光电子组件
CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布
US20080062688A1 (en) * 2006-09-11 2008-03-13 3M Innovative Properties Company Illumination devices and methods for making the same
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
ES2251893T1 (es) 2003-04-04 2006-05-16 Novozymes A/S Reduccion de la viscosidad de una pasta.
JP4183175B2 (ja) * 2003-04-21 2008-11-19 京セラ株式会社 発光素子収納用パッケージおよび発光装置
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
EP2535766A3 (en) * 2007-05-20 2013-05-01 3M Innovative Properties Company Asymmetric reflective film and backlight having a hollow cavity, which recycles the light
JP2009032943A (ja) * 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板
KR101571576B1 (ko) * 2008-02-07 2015-11-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 구조화된 필름을 구비한 중공형 백라이트
KR20100126389A (ko) * 2008-02-22 2010-12-01 쓰리엠 이노베이티브 프로퍼티즈 컴파니 선택된 출력 광속 분포를 갖는 백라이트 및 이를 사용한 디스플레이 시스템

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996021168A1 (en) * 1995-01-06 1996-07-11 W.L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
WO2003038912A2 (de) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1934715A (zh) * 2004-03-23 2007-03-21 奥斯兰姆奥普托半导体有限责任公司 具有多部件的壳体的光电子组件
CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布
US20080062688A1 (en) * 2006-09-11 2008-03-13 3M Innovative Properties Company Illumination devices and methods for making the same
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof

Also Published As

Publication number Publication date
EP2454765A1 (de) 2012-05-23
JP2012533182A (ja) 2012-12-20
CN102473825A (zh) 2012-05-23
DE102009033287A1 (de) 2011-01-20
WO2011006754A1 (de) 2011-01-20
US8581288B2 (en) 2013-11-12
KR20120039023A (ko) 2012-04-24
JP5685249B2 (ja) 2015-03-18
US20120132947A1 (en) 2012-05-31
KR101649287B1 (ko) 2016-08-18

Similar Documents

Publication Publication Date Title
CN102473825A (zh) 发光二极管和用于制造发光二极管的方法
JP2012533182A5 (enExample)
KR100927077B1 (ko) 광 반도체 장치 및 광 반도체 장치의 제조 방법
JP4945106B2 (ja) 半導体発光装置
US7183588B2 (en) Light emission device
JP5819414B2 (ja) 表面実装可能なオプトエレクトロニクス部品および表面実装可能なオプトエレクトロニクス部品の製造方法
TW501276B (en) Opto-electronic element with a semiconductor chip, module with a semiconductor chip, module with a plurality of elements optical display device, illumination or background illumination device, liquid crystal display
JP6099764B2 (ja) オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
CN100565933C (zh) 具有多部件的壳体的光电子组件
JP2008502160A (ja) 反射レンズを備えたパワー発光ダイパッケージおよびその作製方法
JP2005294736A (ja) 半導体発光装置の製造方法
JP2008502159A (ja) 反射レンズを備えたパワー発光ダイパッケージおよびその作製方法
CN103026488B (zh) 发光二极管
KR20090002319A (ko) 발광 다이오드 패키지 및 그 제조방법
CN100379036C (zh) 表面安装型发光二极管
TWI275189B (en) Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
JP4939946B2 (ja) ビーム発光型及び／又はビーム受光型半導体構成素子
CN103069592B (zh) 发射辐射的器件和用于制造发射辐射的器件的方法
KR101047603B1 (ko) 발광 소자 패키지 및 그 제조방법
US9780273B2 (en) Optoelectronic component
US20070274636A1 (en) Optoelectronic Module, and Method for the Production Thereof
JP4511238B2 (ja) 発光素子収納用パッケージおよび発光装置ならびに照明装置
US20120025217A1 (en) Led lighting module
JP2013187269A (ja) 光半導体装置及びその製造方法
CN105960715A (zh) 光电子部件及其生产方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150225

Termination date: 20190629