CN102473825B - 发光二极管和用于制造发光二极管的方法 - Google Patents

发光二极管和用于制造发光二极管的方法 Download PDF

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Publication number
CN102473825B
CN102473825B CN201080031876.2A CN201080031876A CN102473825B CN 102473825 B CN102473825 B CN 102473825B CN 201080031876 A CN201080031876 A CN 201080031876A CN 102473825 B CN102473825 B CN 102473825B
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CN
China
Prior art keywords
light
emitting diode
reflecting element
supporting mass
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080031876.2A
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English (en)
Chinese (zh)
Other versions
CN102473825A (zh
Inventor
格特鲁德·克劳特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102473825A publication Critical patent/CN102473825A/zh
Application granted granted Critical
Publication of CN102473825B publication Critical patent/CN102473825B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Led Device Packages (AREA)
CN201080031876.2A 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法 Expired - Fee Related CN102473825B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009033287.1 2009-07-15
PCT/EP2010/059217 WO2011006754A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (2)

Publication Number Publication Date
CN102473825A CN102473825A (zh) 2012-05-23
CN102473825B true CN102473825B (zh) 2015-02-25

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080031876.2A Expired - Fee Related CN102473825B (zh) 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法

Country Status (7)

Country Link
US (1) US8581288B2 (enExample)
EP (1) EP2454765A1 (enExample)
JP (1) JP5685249B2 (enExample)
KR (1) KR101649287B1 (enExample)
CN (1) CN102473825B (enExample)
DE (1) DE102009033287A1 (enExample)
WO (1) WO2011006754A1 (enExample)

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DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
USRE47444E1 (en) 2011-11-17 2019-06-18 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
KR102304741B1 (ko) 2013-11-07 2021-09-24 루미리즈 홀딩 비.브이. Ｌｅｄ를 둘러싸는 내부 전반사 층을 갖는 ｌｅｄ를 위한 기판
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) * 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
WO2020139022A1 (ko) 2018-12-27 2020-07-02 안상정 반도체 발광소자
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
DE112019006996B4 (de) * 2019-03-08 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer halbleiterbauelemente
US20220293824A1 (en) * 2020-04-17 2022-09-15 Ningbo Sunpu Led Co., Ltd. Ultraviolet led device
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

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CN1934715A (zh) * 2004-03-23 2007-03-21 奥斯兰姆奥普托半导体有限责任公司 具有多部件的壳体的光电子组件
CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布

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JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US5596450A (en) 1995-01-06 1997-01-21 W. L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1798830A (zh) 2003-04-04 2006-07-05 诺维信公司 减小糖化醪的粘性
JP4183175B2 (ja) * 2003-04-21 2008-11-19 京セラ株式会社 発光素子収納用パッケージおよび発光装置
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CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布

Also Published As

Publication number Publication date
KR20120039023A (ko) 2012-04-24
US20120132947A1 (en) 2012-05-31
KR101649287B1 (ko) 2016-08-18
WO2011006754A1 (de) 2011-01-20
EP2454765A1 (de) 2012-05-23
CN102473825A (zh) 2012-05-23
JP2012533182A (ja) 2012-12-20
DE102009033287A1 (de) 2011-01-20
US8581288B2 (en) 2013-11-12
JP5685249B2 (ja) 2015-03-18

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Granted publication date: 20150225

Termination date: 20190629

CF01 Termination of patent right due to non-payment of annual fee