KR101649287B1 - 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 - Google Patents

발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 Download PDF

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Publication number
KR101649287B1
KR101649287B1 KR1020127004034A KR20127004034A KR101649287B1 KR 101649287 B1 KR101649287 B1 KR 101649287B1 KR 1020127004034 A KR1020127004034 A KR 1020127004034A KR 20127004034 A KR20127004034 A KR 20127004034A KR 101649287 B1 KR101649287 B1 KR 101649287B1
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South Korea
Prior art keywords
light emitting
emitting diode
carrier
reflective element
electromagnetic radiation
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Expired - Fee Related
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KR1020127004034A
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English (en)
Korean (ko)
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KR20120039023A (ko
Inventor
게르트루트 크라우터
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20120039023A publication Critical patent/KR20120039023A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Led Device Packages (AREA)
KR1020127004034A 2009-07-15 2010-06-29 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 Expired - Fee Related KR101649287B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009033287.1 2009-07-15

Publications (2)

Publication Number Publication Date
KR20120039023A KR20120039023A (ko) 2012-04-24
KR101649287B1 true KR101649287B1 (ko) 2016-08-18

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127004034A Expired - Fee Related KR101649287B1 (ko) 2009-07-15 2010-06-29 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법

Country Status (7)

Country Link
US (1) US8581288B2 (enExample)
EP (1) EP2454765A1 (enExample)
JP (1) JP5685249B2 (enExample)
KR (1) KR101649287B1 (enExample)
CN (1) CN102473825B (enExample)
DE (1) DE102009033287A1 (enExample)
WO (1) WO2011006754A1 (enExample)

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DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
USRE47444E1 (en) 2011-11-17 2019-06-18 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
KR102304741B1 (ko) 2013-11-07 2021-09-24 루미리즈 홀딩 비.브이. Ｌｅｄ를 둘러싸는 내부 전반사 층을 갖는 ｌｅｄ를 위한 기판
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) * 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
WO2020139022A1 (ko) 2018-12-27 2020-07-02 안상정 반도체 발광소자
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
DE112019006996B4 (de) * 2019-03-08 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer halbleiterbauelemente
US20220293824A1 (en) * 2020-04-17 2022-09-15 Ningbo Sunpu Led Co., Ltd. Ultraviolet led device
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

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JP2004327505A (ja) 2003-04-21 2004-11-18 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2005507178A (ja) 2001-10-31 2005-03-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング オプトエレクトロニクスデバイス
JP2008519444A (ja) 2004-11-03 2008-06-05 トリドニックアトコ オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 色変換材料を有する発光ダイオード装置
JP2009032943A (ja) 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板

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JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US5596450A (en) 1995-01-06 1997-01-21 W. L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1798830A (zh) 2003-04-04 2006-07-05 诺维信公司 减小糖化醪的粘性
DE102004014207A1 (de) * 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
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US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
EP2160645A2 (en) * 2007-05-20 2010-03-10 3M Innovative Properties Company Light recycling hollow cavity type display backlight
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
EP2255231A1 (en) * 2008-02-07 2010-12-01 3M Innovative Properties Company Hollow backlight with structured films
JP5792464B2 (ja) * 2008-02-22 2015-10-14 スリーエム イノベイティブ プロパティズ カンパニー 選択的出力光束分布を有するバックライト及びそれを使用した表示システム並びにバックライトの形成方法

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JP2005507178A (ja) 2001-10-31 2005-03-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング オプトエレクトロニクスデバイス
JP2004327505A (ja) 2003-04-21 2004-11-18 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2008519444A (ja) 2004-11-03 2008-06-05 トリドニックアトコ オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 色変換材料を有する発光ダイオード装置
JP2009032943A (ja) 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板

Also Published As

Publication number Publication date
KR20120039023A (ko) 2012-04-24
US20120132947A1 (en) 2012-05-31
WO2011006754A1 (de) 2011-01-20
EP2454765A1 (de) 2012-05-23
CN102473825A (zh) 2012-05-23
CN102473825B (zh) 2015-02-25
JP2012533182A (ja) 2012-12-20
DE102009033287A1 (de) 2011-01-20
US8581288B2 (en) 2013-11-12
JP5685249B2 (ja) 2015-03-18

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