KR101649287B1 - 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 - Google Patents

발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 Download PDF

Info

Publication number
KR101649287B1
KR101649287B1 KR1020127004034A KR20127004034A KR101649287B1 KR 101649287 B1 KR101649287 B1 KR 101649287B1 KR 1020127004034 A KR1020127004034 A KR 1020127004034A KR 20127004034 A KR20127004034 A KR 20127004034A KR 101649287 B1 KR101649287 B1 KR 101649287B1
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
carrier
reflective element
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127004034A
Other languages
English (en)
Korean (ko)
Other versions
KR20120039023A (ko
Inventor
게르트루트 크라우터
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120039023A publication Critical patent/KR20120039023A/ko
Application granted granted Critical
Publication of KR101649287B1 publication Critical patent/KR101649287B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
KR1020127004034A 2009-07-15 2010-06-29 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 Expired - Fee Related KR101649287B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009033287.1 2009-07-15
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode

Publications (2)

Publication Number Publication Date
KR20120039023A KR20120039023A (ko) 2012-04-24
KR101649287B1 true KR101649287B1 (ko) 2016-08-18

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127004034A Expired - Fee Related KR101649287B1 (ko) 2009-07-15 2010-06-29 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법

Country Status (7)

Country Link
US (1) US8581288B2 (enExample)
EP (1) EP2454765A1 (enExample)
JP (1) JP5685249B2 (enExample)
KR (1) KR101649287B1 (enExample)
CN (1) CN102473825B (enExample)
DE (1) DE102009033287A1 (enExample)
WO (1) WO2011006754A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
US9142747B2 (en) 2011-11-17 2015-09-22 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
CN105684174B (zh) * 2013-11-07 2018-10-09 亮锐控股有限公司 用于led的具有包围led的全内反射层的衬底
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) * 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) * 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
CN113228312B (zh) 2018-12-27 2024-08-13 波主有限公司 半导体发光器件
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
US11990574B2 (en) * 2019-03-08 2024-05-21 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
WO2021208264A1 (zh) * 2020-04-17 2021-10-21 宁波升谱光电股份有限公司 一种紫外led器件
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
DE112024000872T5 (de) * 2023-05-17 2025-12-11 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327505A (ja) 2003-04-21 2004-11-18 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2005507178A (ja) 2001-10-31 2005-03-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング オプトエレクトロニクスデバイス
JP2008519444A (ja) 2004-11-03 2008-06-05 トリドニックアトコ オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 色変換材料を有する発光ダイオード装置
JP2009032943A (ja) 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US5596450A (en) * 1995-01-06 1997-01-21 W. L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
ES2251893T1 (es) 2003-04-04 2006-05-16 Novozymes A/S Reduccion de la viscosidad de una pasta.
DE102004014207A1 (de) * 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
US8525402B2 (en) * 2006-09-11 2013-09-03 3M Innovative Properties Company Illumination devices and methods for making the same
US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
EP2535766A3 (en) * 2007-05-20 2013-05-01 3M Innovative Properties Company Asymmetric reflective film and backlight having a hollow cavity, which recycles the light
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
KR101571576B1 (ko) * 2008-02-07 2015-11-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 구조화된 필름을 구비한 중공형 백라이트
KR20100126389A (ko) * 2008-02-22 2010-12-01 쓰리엠 이노베이티브 프로퍼티즈 컴파니 선택된 출력 광속 분포를 갖는 백라이트 및 이를 사용한 디스플레이 시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005507178A (ja) 2001-10-31 2005-03-10 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング オプトエレクトロニクスデバイス
JP2004327505A (ja) 2003-04-21 2004-11-18 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP2008519444A (ja) 2004-11-03 2008-06-05 トリドニックアトコ オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 色変換材料を有する発光ダイオード装置
JP2009032943A (ja) 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板

Also Published As

Publication number Publication date
EP2454765A1 (de) 2012-05-23
JP2012533182A (ja) 2012-12-20
CN102473825B (zh) 2015-02-25
CN102473825A (zh) 2012-05-23
DE102009033287A1 (de) 2011-01-20
WO2011006754A1 (de) 2011-01-20
US8581288B2 (en) 2013-11-12
KR20120039023A (ko) 2012-04-24
JP5685249B2 (ja) 2015-03-18
US20120132947A1 (en) 2012-05-31

Similar Documents

Publication Publication Date Title
KR20120039023A (ko) 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법
JP2012533182A5 (enExample)
US9331255B2 (en) Housing that includes reflector part and housing material formed with plastic material
KR101148332B1 (ko) 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
CN101044637B (zh) 用于光电元件的装置以及具有光电元件及所述装置的模块
JP5819414B2 (ja) 表面実装可能なオプトエレクトロニクス部品および表面実装可能なオプトエレクトロニクス部品の製造方法
JP6099764B2 (ja) オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
KR101772722B1 (ko) 광전자 소자
US20130240935A1 (en) Method for producing a surface-mountable semiconductor component
JP2008502160A (ja) 反射レンズを備えたパワー発光ダイパッケージおよびその作製方法
CN101569023A (zh) 用于光电子器件的壳体和光电子器件在壳体中的布置
KR101176672B1 (ko) 방사선을 방출하거나 방사선을 수신하는 반도체 소자 및 그 제조 방법
KR20130066635A (ko) 광전자 소자 그리고 광전자 소자 및 복합 구조물을 제조하기 위한 방법
CN100527454C (zh) 光电子部件以及用于光电子部件的壳体
KR101669281B1 (ko) 발광 장치
KR101052967B1 (ko) 레이저다이오드 소자의 제조 방법, 레이저다이오드 소자의하우징 및 레이저다이오드 소자
CN113491044A (zh) 光电半导体构件和制造光电半导体构件的方法
CN1875491B (zh) 发射辐射和/或接收辐射的半导体组件及其制造方法
CN103069592A (zh) 发射辐射的器件和用于制造发射辐射的器件的方法
US7928466B2 (en) Light emitting semi-conductor diode (with high light output)
KR101526087B1 (ko) 광전 소자용 하우징 및 그 하우징의 제조 방법
KR20100136050A (ko) 방열 ｌｅｄ 패키지
KR100765699B1 (ko) 발광소자 패키지 및 그 제조방법
KR100785450B1 (ko) 측면 발광 다이오드 패키지
US20130192064A1 (en) Method for manufacturing packaged light emitting diode

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190812

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190812

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000