JP5685249B2 - 発光ダイオードおよび発光ダイオードの製造方法 - Google Patents

発光ダイオードおよび発光ダイオードの製造方法 Download PDF

Info

Publication number
JP5685249B2
JP5685249B2 JP2012519958A JP2012519958A JP5685249B2 JP 5685249 B2 JP5685249 B2 JP 5685249B2 JP 2012519958 A JP2012519958 A JP 2012519958A JP 2012519958 A JP2012519958 A JP 2012519958A JP 5685249 B2 JP5685249 B2 JP 5685249B2
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
carrier
reflective element
synthetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012519958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012533182A (ja
JP2012533182A5 (enExample
Inventor
ゲルトルート クラウター
ゲルトルート クラウター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012533182A publication Critical patent/JP2012533182A/ja
Publication of JP2012533182A5 publication Critical patent/JP2012533182A5/ja
Application granted granted Critical
Publication of JP5685249B2 publication Critical patent/JP5685249B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Led Device Packages (AREA)
JP2012519958A 2009-07-15 2010-06-29 発光ダイオードおよび発光ダイオードの製造方法 Expired - Fee Related JP5685249B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009033287.1 2009-07-15
PCT/EP2010/059217 WO2011006754A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (3)

Publication Number Publication Date
JP2012533182A JP2012533182A (ja) 2012-12-20
JP2012533182A5 JP2012533182A5 (enExample) 2014-09-11
JP5685249B2 true JP5685249B2 (ja) 2015-03-18

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012519958A Expired - Fee Related JP5685249B2 (ja) 2009-07-15 2010-06-29 発光ダイオードおよび発光ダイオードの製造方法

Country Status (7)

Country Link
US (1) US8581288B2 (enExample)
EP (1) EP2454765A1 (enExample)
JP (1) JP5685249B2 (enExample)
KR (1) KR101649287B1 (enExample)
CN (1) CN102473825B (enExample)
DE (1) DE102009033287A1 (enExample)
WO (1) WO2011006754A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
USRE47444E1 (en) 2011-11-17 2019-06-18 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
KR102304741B1 (ko) 2013-11-07 2021-09-24 루미리즈 홀딩 비.브이. Ｌｅｄ를 둘러싸는 내부 전반사 층을 갖는 ｌｅｄ를 위한 기판
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) * 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
WO2020139022A1 (ko) 2018-12-27 2020-07-02 안상정 반도체 발광소자
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
DE112019006996B4 (de) * 2019-03-08 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer halbleiterbauelemente
US20220293824A1 (en) * 2020-04-17 2022-09-15 Ningbo Sunpu Led Co., Ltd. Ultraviolet led device
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US5596450A (en) 1995-01-06 1997-01-21 W. L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1798830A (zh) 2003-04-04 2006-07-05 诺维信公司 减小糖化醪的粘性
JP4183175B2 (ja) * 2003-04-21 2008-11-19 京セラ株式会社 発光素子収納用パッケージおよび発光装置
DE102004014207A1 (de) * 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
DE102004053116A1 (de) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Leuchtdioden-Anordnung mit Farbkonversions-Material
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
US8525402B2 (en) * 2006-09-11 2013-09-03 3M Innovative Properties Company Illumination devices and methods for making the same
US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
EP2160645A2 (en) * 2007-05-20 2010-03-10 3M Innovative Properties Company Light recycling hollow cavity type display backlight
JP2009032943A (ja) * 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
EP2255231A1 (en) * 2008-02-07 2010-12-01 3M Innovative Properties Company Hollow backlight with structured films
JP5792464B2 (ja) * 2008-02-22 2015-10-14 スリーエム イノベイティブ プロパティズ カンパニー 選択的出力光束分布を有するバックライト及びそれを使用した表示システム並びにバックライトの形成方法

Also Published As

Publication number Publication date
KR20120039023A (ko) 2012-04-24
US20120132947A1 (en) 2012-05-31
KR101649287B1 (ko) 2016-08-18
WO2011006754A1 (de) 2011-01-20
EP2454765A1 (de) 2012-05-23
CN102473825A (zh) 2012-05-23
CN102473825B (zh) 2015-02-25
JP2012533182A (ja) 2012-12-20
DE102009033287A1 (de) 2011-01-20
US8581288B2 (en) 2013-11-12

Similar Documents

Publication Publication Date Title
JP5685249B2 (ja) 発光ダイオードおよび発光ダイオードの製造方法
JP2012533182A5 (enExample)
KR100927077B1 (ko) 광 반도체 장치 및 광 반도체 장치의 제조 방법
JP4045781B2 (ja) 発光装置
JP5819414B2 (ja) 表面実装可能なオプトエレクトロニクス部品および表面実装可能なオプトエレクトロニクス部品の製造方法
EP2218116B1 (en) Slim led package
US10355183B2 (en) LED package
JP6099764B2 (ja) オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
CN100565933C (zh) 具有多部件的壳体的光电子组件
CN102939670B (zh) 光电子器件
US20130009190A1 (en) Light emitting device and method for manufacturing same
KR101783755B1 (ko) 발광 다이오드
JP2010251805A (ja) 照明装置
US20160258614A1 (en) Luminaire
JP2018518059A (ja) 発光ダイオード装置および該発光ダイオード装置を製造するための方法
CN102834942B (zh) Led模块
JP2008235720A (ja) 照明装置
JP2006049715A (ja) 発光光源、照明装置及び表示装置
JP2007335734A (ja) 半導体装置
WO2007072659A1 (ja) 発光装置
JP6390899B2 (ja) 車両用照明装置および車両用灯具
KR20080087405A (ko) Ｌｅｄ 패키지 및 그 제조방법
JP2017157687A (ja) Ｌｅｄ発光装置
JP5192773B2 (ja) 発光装置
KR20100002665A (ko) 발광 다이오드 패키지

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140121

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140411

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140418

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140722

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150116

R150 Certificate of patent or registration of utility model

Ref document number: 5685249

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees