CN102460748B - 具有远程磷光体层和反射基板的led - Google Patents

具有远程磷光体层和反射基板的led Download PDF

Info

Publication number
CN102460748B
CN102460748B CN201080025736.4A CN201080025736A CN102460748B CN 102460748 B CN102460748 B CN 102460748B CN 201080025736 A CN201080025736 A CN 201080025736A CN 102460748 B CN102460748 B CN 102460748B
Authority
CN
China
Prior art keywords
layer
phosphor
light
substrate
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080025736.4A
Other languages
English (en)
Other versions
CN102460748A (zh
Inventor
A.J.戴维
R.I.阿尔达斯
M.巴特沃思
S.J.比尔休曾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Lumileds LLC
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Publication of CN102460748A publication Critical patent/CN102460748A/zh
Application granted granted Critical
Publication of CN102460748B publication Critical patent/CN102460748B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光器件,包括安装在基板(12)上的倒装芯片发光二极管(LED)管芯。基板的顶面具有反射层。在LED管芯之上模制半球第一透明层(36)。然后在第一透明层之上提供低折射率层(68)以提供磷光的TIR。然后在低折射率层之上提供半球磷光体层(70)。然后在磷光体层之上模制透镜(72)。与在高折射率磷光体层和底层低折射率层的界面处的TIR相组合,通过反射基板层实现的反射极大地改善了灯的效率。可以使用其他材料。低折射率层可以是气隙(46)或模制层(68)。除了低折射率层,可以在第一透明层之上溅射分布式布拉格反射器(76)。

Description

具有远程磷光体层和反射基板的LED
技术领域
本发明涉及具有磷光体覆层从而波长转换LED发射的发光二极管(LED),且尤其涉及使用远程(remote)磷光体改善LED灯的效率的技术。
背景技术
为了使用蓝光LED管芯产生白光,公知的是例如通过在粘合剂中喷涂或旋涂磷光体、电泳、在反射杯中应用磷光体或其他方式而在LED管芯之上直接沉积YAG磷光体或红色和绿色磷光体。还已知将磷光体的预制片(例如,烧结的磷光体粉末)附着在LED管芯顶部上。这种磷光体层是非远程的,因为它们直接接触半导体管芯的表面。通过磷光体泄露的蓝光与磷光组合产生白光。使用这种非远程磷光体的问题包括:1)存在来自磷光体层的蓝光的明显背散射,该背散射然后被LED、基板(submount)和金属电极部分地吸收;2)存在被LED、基板和金属电极部分吸收的显著数量的由磷光体产生的光;3)对于高功率LED而言光子密度极高且使得磷光体饱和;4)LED非常热且磷光体可以对热作出反应以导致磷光体颗粒嵌于其中的聚合物粘合剂层(例如硅树脂)变暗;以及5)由于经过不同厚度的磷光体的蓝光射线的各种角度(经过最小厚度的法向蓝光射线),颜色随视角变化。
诸如在Grigoriy Basin等人转让给本受让人且通过引用结合于此的美国专利No.7,344,902中描述,还已知在硅树脂粘合剂中浸泡磷光体粉末且在LED管芯之上模制硅树脂以形成透镜。磷光体在透镜中以极低密度分布。这种远程磷光体创建了相对大的光源,与具有磷光体薄涂层的LED管芯相比,其每单位面积的亮度大为减小。而且,因为磷光体覆盖在大面积基板上,磷光部分地被基板以及LED管芯和电极吸收,所以白光LED的效率减小。
Allen等人在Applied Physics Letters 92, 143309(2008)上的名为“A NearlyIdeal Phosphor-Converted White Light-Emitting Diode”的文章描述了被气隙环绕的裸LED管芯以及被透明层封装的半球磷光体层。存在从LED到气隙的不良光提取,且光被基板吸收。经济地制造这种设备也是相当困难的。
所需要的是利用远程磷光体创建磷光体转换LED的技术,通过使得较少的光被LED和基板吸收,该LED是十分高效的。还希望提供一种远程磷光体,其中所得的光源小于具有浸泡在硅树脂透镜中磷光体的光源。
发明内容
在一个实施例中,蓝光LED管芯安装在基板上。基板设置有环绕管芯的反射表面。LED管芯具有在其上模制的薄半球密封剂,诸如硅树脂或另一高折射率透明材料。薄反射层然后在密封剂层之上创建,该薄反射层允许蓝光经过但是反射来自其上的磷光。反射层可以是在大于临界角(例如,空气隙或多孔层)的角度全反射光的低折射率(低n)层,或者反射层可以是分布式布拉格反射器。磷光体层然后沉积或模制在反射层之上。磷光体层可以是致密和薄的,以免创建大光源。诸如模制的硅树脂透镜的透明外部层然后在磷光体层之上形成以保护磷光体层,且提供诸如创建所需发射图案和增加光提取的光学属性。
将描述用于在LED管芯之上形成各层的各种技术,一种方法是用于形成所有层的模制技术。
具有LED管芯和反射层的折射率之间折射率的内部半球密封剂改善了从LED管芯的光提取。因为磷光体“壳”远离管芯,存在很少蓝光的背散射。而且,磷光通过反射层和反射基板表面向外反射,改善了效率。而且,来自磷光体的蓝光的任意背散射被反射层反射出来而不是返回LED,这是因为大多数背散射光将不垂直于反射层。而且,因为远程磷光体并不浸泡在透镜中,磷光体壳可以具有小直径以创建亮光源。在创建小光源的同时仍获得了远程磷光体的所有优点。
磷光体可以是YAG、红色、绿色或任意其他颜色磷光体或磷光体的组合。
在一个实施例中,在成百上千个LED管芯安装在基板晶片上的情况下,在晶片尺度上同时执行各层的创建。
附图说明
图1是安装在基板上的蓝光或UV倒装芯片LED管芯的剖面图,其中基板具有反射顶层。
图2说明由诸如500-4000个LED的LED管芯阵列组装的简化的基板晶片,其中晶片上的所有LED管芯被同时处理。
图3说明基板晶片设为与模具相抵(bring against),该模具用于形成用于封装LED管芯的第一硅树脂层并且从LED管芯隔开磷光体层。使用不同模具的相同模制工艺可以用于形成不同于图5-8工艺的所有层。
图4说明封装之后的LED管芯。
图5说明固体半球外部透镜。
图6说明被加工以创建腔体的图5的透镜。
图7说明其上沉积有磷光体层的图6的腔体。
图8说明透镜和磷光体层附着在封装管芯之上。
图9说明透镜和磷光体层附着在封装管芯之上,在磷光体层和密封剂之间存在气隙以提供TIR。
图10说明图9中的光源的各种光线,示出气隙和基板表面之间的反射。
图11说明具有浸泡在外部透镜中的磷光体的光源,示出气隙和基板表面的反射。
图12说明光源,其中每一层通过LED管芯之上的连续模制工艺形成,且低折射率(n)层可以是包括牺牲溶胶凝胶层的任意可模制层。
图13说明光源,其中反射层是分布式布拉格反射器(DBR)。
图14是说明流明输出与基板上反射层的反射率之间关系改进的图表。
使用相同的标号标记相同或等同的元件。
具体实施方式
图1说明安装在一部分基板晶片12上的常规倒装芯片LED管芯10。在倒装芯片中,在LED管芯的相同面上形成n和p接触。
LED管芯10由生长在诸如蓝宝石衬底的生长衬底上的包括n层14、有源层15和p层16的半导体外延层形成。在图1中,生长衬底通过激光剥离、刻蚀、研磨或通过其他技术去除。在一个实例中,外延层是GaN基的,且有源层15发射蓝光。发射UV光的LED管芯也可应用于本发明。
金属电极18电接触p层16,且金属电极20电接触n层14。在一个实例中,电极18和20是超声焊接到陶瓷基板晶片12上的阳极和阴极金属焊盘22和23的金焊盘。基板晶片12具有通到底部金属焊盘26和28的导电通孔24以用于结合到印刷电路板。很多LED安装在基板晶片12上,且将在稍后被划片以形成各个LED/基板。
LED的进一步细节能够在受让人的美国专利No.6,649,440和6,274,399以及美国专利公报US 2006/0281203A1和2005/0269582 A1中发现,所有这些通过引用结合于此。
根据本发明的一个实施例,在基板晶片12的表面之上形成反射层29(例如R>90%)以反射远程磷光体层产生的光。基板典型地是陶瓷、硅或其他光吸收材料。反射层29可以是溅射的金属镜(例如Al或Ag)、电介质镜、金属/电介质组合或非吸收散射体。在一个实施例中,反射层29延伸到除LED管芯10之上以外的晶片12的所有区域。在另一实施例中,反射层29是至少在磷光体层接触基板的地方之下延伸的每个LED管芯周围的镜面环。当沉积反射层29时,在附连LED管芯之前,可以临时在LED管芯区域之上形成掩模(未示出),以防止反射层29覆盖金属焊盘22和23,或者可以使用印刷工艺来形成反射层29。反射层29将增加灯的效率。
图2是其上安装LED管芯10的阵列的基板晶片12的简化说明。可以在单个基板晶片12上存在500-4000个LED。晶片12上的所有LED将使用下述方法同时处理。
按照以下方式在LED管芯10之上模制第一硅树脂层以封装管芯10。
图3说明基板晶片12和LED管芯10的一部分布置在模具30之上,该模具30具有用液体硅树脂34或软化硅树脂34或粉末硅树脂34或片剂形式硅树脂填充的腔体32。如果硅树脂34不以液体或软化形式配给,则模具30被加热以软化硅树脂34。基板晶片12设为与模具30相抵,使得LED管芯10在每个腔体32中浸没在硅树脂34中。晶片12和模具30被按压在一起,以迫使硅树脂34填充所有空隙。外围密封剂允许高压力,同时在硅树脂34填充空隙时允许所有空气逃逸。还可以利用环绕密封剂的真空源在晶片12和模具30之间拉出(pulled)真空。
取决于使用的硅树脂34的类型,模具30然后被加热以固化硅树脂34。如果原始硅树脂34在室温是固体(例如粉末或片剂),模具30被冷却以硬化硅树脂34。备选地,可以使用透明模具且可以使用UV光来固化硅树脂34。
然后从晶片12去除模具30,得出图4的结构,其中所得硅树脂层36封装每个LED管芯10。在所示实施例中,硅树脂层36形成为具有基本半球的形状。硅树脂层36的厚度并不关键,因为LED光通过透明硅树脂层36以朗伯(Lambertian)模式扩展。
取决于使用的硅树脂34的类型,晶片12然后可以经历约250℃的后固化温度以附加地硬化硅树脂层36。可以使用不同于硅树脂的材料,诸如粉末形式的环氧树脂的模制化合物或另外合适聚合物。
还可以使用注射模塑法形成硅树脂层36,其中晶片12和模具放在一起,液体硅树脂通过入口被压力注入到模具中且创建真空。模具腔体之间的小通道允许硅树脂填充所有腔体。然后通过加热而固化硅树脂,从晶片12分离模具。
硅树脂层36(聚合物)可以替代为由高折射率玻璃、环氧树脂或其他材料形成。
将参考图5-8描述用于在LED管芯10和硅树脂层36之上形成附加层的一种技术。稍后描述一种全模制工艺。
在图5中,通过模制或另一技术形成固体半球穹顶38。穹顶38可以具有5mm量级的直径。穹顶可以是硅树脂、环氧树脂、蓝宝石或其他合适的透明材料。
在图6中,穹顶38被加工或处理以形成具有3mm量级直径的腔体40。在一个实施例中,用于穹顶38的模制处理可以在匹配基板晶片12上的LED管芯10位置的穹顶阵列中在穹顶之间创建薄连接器以简化处理。
在图7中,在腔体中形成具有基本均匀厚度的几百微米量级的薄磷光体层42。这可以使用浸泡在硅树脂粘合剂中的磷光体预制柔性片的堆叠完成。还可以通过在硅树脂粘合剂中喷射磷光体、电泳、沉积接着加工、或者通过其他技术沉积磷光体。如在所有实施例中那样,磷光体层42可以包括多个不同磷光体层或诸如YAG、红色和/或绿色磷光体的磷光体混合物以产生白光。如果使用UV LED,则蓝色磷光体也将用于产生白光。
如图8所示,完成的帽44然后对准于每个LED管芯10,且帽44附着到环绕每个LED管芯10的基板晶片12的表面。硅树脂可以用作粘合剂。
如图9所示,在磷光体层42和硅树脂层36之间存在气隙46。LED管芯10具有约1mm的边,硅树脂层36具有约2mm的直径,磷光体层42是几百微米,且腔体40具有约3mm的直径,导致环绕硅树脂层36的约0.2-0.5mm的气隙46。因为气隙46的折射率(n)约为1,且磷光体层42的n处于1.7-2的量级,以大于临界角产生的朝向气隙46的任何磷光将被全反射回来且不被LED管芯10、电极或其他元件吸收。
通过使得硅树脂层36基本是环绕LED管芯10的半球,将在气隙36和硅树脂层46之间的界面存在LED光极少的TIR。硅树脂层36改善了从LED管芯10的光提取,因为其折射率(例如>1.5)更接近LED管芯10的折射率(例如>2.2)。
图10示出产生的各个光线将如何在图9的灯48中反射。射线50是来自LED管芯10的蓝色射线,且通过磷光体层42泄露。射线52是来自磷光体颗粒的在远离气隙46方向中的发射(例如,黄色、红色、绿色等)。射线54是来自磷光体颗粒的以大于临界角反射离开气隙46且在不撞击LED 10或基板晶片12的条件下离开灯48的发射。射线56是来自磷光体颗粒的反射离开基板晶片12上的反射层29(图1)的发射。
而且,射线54可以是来自LED管芯的背散射的蓝色射线。尽管蓝色射线一般以接近垂直入射地进入磷光体层,但来自磷光体的背散射一般是各向同性的,所以背散射的光具有宽角度范围。大于临界角的任意背散射的蓝光通过气隙46界面(或此处描述的其他反射层)反射出来而不是返回LED。
低折射率层(气隙46)、硅树脂层36和反射层29的组合极大地增加了来自灯48的光提取。
图11说明,不是形成图7的帽,可以使用硅树脂透镜58中低密度磷光体颗粒的较厚的帽。气隙46用作图10中的反射器。射线50是来自LED管芯10的通过透镜58泄露的蓝色射线。射线60和62是来自磷光体颗粒的反射离开气隙46界面的射线(或背散射的蓝光)。射线64是来自磷光体颗粒的反射离开基板晶片12上的反射层29(图1)的射线。因为硅树脂透镜58远宽于图10中的磷光体层42,每单位面积的灯66的亮度将小于图10的亮度,取决于应用,这一点可能是有利或不利的。
由于处理和各种对准,图5-11的技术可能是困难的。
图3中表示的连续模制工艺可以用于形成图12中示出的结构,其中代替气隙,直接在硅树脂层36上模制低折射率材料。在一个实施例中,如前所述模制硅树脂层36。接下来,具有较大腔体32(图3)的模具被填充以溶胶凝胶。溶胶凝胶是公知的且在溶剂中包括纳米颗粒以形成凝胶。这种物质能够被模制。溶剂然后通过受热而被干燥,导致一些收缩以及由纳米颗粒形成的晶体。所得的层将是极度多孔的且有效地用作气隙。因为结构几乎是空的,折射率极低。溶胶凝胶层在图12中示为层68。除了溶胶凝胶,可以使用另一低折射率材料,只要折射率低于磷光体层即可。
接下来,具有稍大穹顶形腔体的另一模具用浸泡在硅树脂中的磷光体颗粒填充。如参考图3所讨论,具有模制的溶胶凝胶穹顶的基板晶片12然后设为与模具相抵。磷光体层7然后通过受热而固化。最终的硅树脂透镜72然后模制在磷光体层之上,或磷光体层可以是最终层。取决于磷光体层是否是最终层,所得的灯74的操作类似于图10或图11中示出的灯的操作。
图13说明低折射率层(46或68)可以替代的是沉积的布拉格反射器(DBR)76。DBR76可以使用共形溅射做得极薄且可以包括10对厚度为98nm和64nm的SiO2/Ta2O5(折射率n分别等于1.5和2)(在450nm(蓝光)提供约40度的反射)、接着是6对厚度为129nm和81nm的SiO2/Ta2O5(在550nm(绿色)提供约45度的反射)。DBR 76在LED光的垂直入射附近一直到15度角在450nm都基本透明(R<10%)。DBR 76在大于15度是反射性的。如前所述,磷光体层78和外部硅树脂透镜80然后被模制。图13说明各个光射线经过DBR 76、反射离开DBR 76且反射离开基板表面。
为了使得所有这些设计有效,来自内部硅树脂穹顶的提取效率必须是高的。这要求LED光以小于临界角的角度撞击该表面,因此内部穹顶的半径必须足够大。因此,一般而言,在小入射角度和小源尺寸的要求之间存在折衷。如果管芯是1×1mm且内部穹顶的半径是2mm,则大部分光以小角度(小于15度)撞击在穹顶上,且仅少量射线以高达20度的角度撞击。这小于用于环氧树脂(或硅树脂)/空气界面的全内折射的角度(约41度),且小于用于DBR的高透射的最大角度。因此,这种尺寸适合于本申请中描述的实现方式。
图14是说明当与本发明的远程磷光体实施例一同使用时,流明输出与基板上的反射层29(图1)的反射率之间关系的近似改善的图表。
所有实施例的各种组合可以用于创建具有高效率的远程磷光体灯。
除了改善的效率,具有基本均匀厚度的远程半球磷光体层相对于视角实现均匀的颜色且磷光体不因受热而劣化。
基板晶片12然后被划片以形成各个LED/基板,其中各图可以表示各个LED/基板。
在本公开中,术语“基板”旨在表示用于至少一个LED管芯的支撑,其中基板上的电接触被结合到LED管芯上的电极,且其中基板具有将被连接到电源的电极。
尽管已经示出和描述了本发明的特定实施例,对于本领域技术人员而言,很明显可以在不偏离本发明的条件下在其更广义的方面做出变化和修改,因此所附权利要求书将落在本发明真实精神和范围内的所有这种变化和修改都包含在其中的范围内。

Claims (9)

1.一种发光器件,包括:
基板上的倒装芯片发光二极管管芯;
在基板的顶面上形成的反射层,其对于可见波长具有至少90%的反射率;
透明的半球的第一层,其封装该发光二极管管芯,该第一层具有第一折射率;
半球的第二层,其环绕该第一层,该第二层包括已经干燥的溶胶凝胶以形成多孔层,从而具有低于第一折射率的第二折射率;以及
半球的磷光体层,其形成在该第二层之上,该第二层具有这样的特性:至少在光相对于第二层大于某一角度时,导致该第二层反射来自该磷光体层的光,
其中在该基板的顶面上的该反射层至少在该磷光体层的一部分下方延伸。
2.根据权利要求1所述的器件,其中该磷光体层具有大于第一折射率的第三折射率。
3.根据权利要求1所述的器件,其中该磷光体层包括浸泡在硅树脂中的磷光体粉末。
4.根据权利要求1所述的器件,还包括环绕该磷光体层的透明第三层。
5.根据权利要求1所述的器件,其中该发光二极管管芯发射蓝光且该磷光体层具有这样的特性:将蓝光的一部分转换成这样的光,当该光与蓝光组合时产生白光。
6.一种用于形成发光器件的方法,包括:
在基板上提供倒装芯片发光二极管管芯;
在基板的顶面上形成反射层,该反射层对于可见波长具有至少90%的反射率;
在该发光二极管管芯之上模制透明的半球的第一层且封装该发光二极管管芯,该第一层具有第一折射率;
形成环绕该第一层的半球的第二层,该第二层包括已经干燥的溶胶凝胶以形成多孔层,从而具有低于第一折射率的第二折射率;以及
在第二层之上模制半球的磷光体层,该第二层具有这样的特性:至少在光相对于该第二层大于某一角度时,导致该第二层反射来自该磷光体层的光,
其中在该基板的顶面上的该反射层至少在该磷光体层的一部分下方延伸。
7.根据权利要求6所述的方法,其中形成环绕该第一层的该半球的第二层包括:在该第一层之上模制该溶胶凝胶,以及干燥该溶胶凝胶以创建该第二层,该第二层具有小于该磷光体层的折射率的第二折射率。
8.根据权利要求6所述的方法,其中模制半球的磷光体层包括模制具有浸泡在硅树脂中的磷光体粉末的层。
9.根据权利要求6所述的方法,还包括在该磷光体层之上模制透明第三层。
CN201080025736.4A 2009-06-09 2010-05-11 具有远程磷光体层和反射基板的led Active CN102460748B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/481,021 US8168998B2 (en) 2009-06-09 2009-06-09 LED with remote phosphor layer and reflective submount
US12/481021 2009-06-09
PCT/IB2010/052085 WO2010143086A1 (en) 2009-06-09 2010-05-11 Led with remote phosphor layer and reflective submount

Publications (2)

Publication Number Publication Date
CN102460748A CN102460748A (zh) 2012-05-16
CN102460748B true CN102460748B (zh) 2016-11-16

Family

ID=42556525

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080025736.4A Active CN102460748B (zh) 2009-06-09 2010-05-11 具有远程磷光体层和反射基板的led

Country Status (7)

Country Link
US (2) US8168998B2 (zh)
EP (1) EP2441098B8 (zh)
JP (1) JP2012529766A (zh)
KR (2) KR20120024951A (zh)
CN (1) CN102460748B (zh)
TW (1) TWI528602B (zh)
WO (1) WO2010143086A1 (zh)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791631B2 (en) * 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
DE102007049799A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US9754926B2 (en) * 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
CN102460747B (zh) 2009-06-04 2015-04-15 皇家飞利浦电子股份有限公司 高效发光器件和用于制造这种器件的方法
US8168998B2 (en) * 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount
US8217567B2 (en) * 2009-06-11 2012-07-10 Cree, Inc. Hot light emitting diode (LED) lighting systems
US8431423B2 (en) * 2009-07-16 2013-04-30 Koninklijke Philips Electronics N.V. Reflective substrate for LEDS
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
JP5379615B2 (ja) * 2009-09-09 2013-12-25 パナソニック株式会社 照明装置
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
KR101508284B1 (ko) * 2009-12-15 2015-04-06 엘지이노텍 주식회사 양자점을 이용한 백라이트 유닛 및 이를 포함하는 액정표시장치
US8771577B2 (en) * 2010-02-16 2014-07-08 Koninklijke Philips N.V. Light emitting device with molded wavelength converting layer
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) * 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US8835199B2 (en) 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
US8455882B2 (en) * 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
EP2655961A4 (en) 2010-12-23 2014-09-03 Qd Vision Inc OPTICAL ELEMENT CONTAINING QUANTUM POINTS
TWI441361B (zh) * 2010-12-31 2014-06-11 Interlight Optotech Corp 發光二極體封裝結構及其製造方法
US9053958B2 (en) 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
JP5962102B2 (ja) * 2011-03-24 2016-08-03 日亜化学工業株式会社 発光装置及びその製造方法
US8721097B2 (en) 2011-05-19 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. LED lamp with improved light output
US8957430B2 (en) * 2011-06-15 2015-02-17 Cree, Inc. Gel underfill layers for light emitting diodes
US8525190B2 (en) 2011-06-15 2013-09-03 Cree, Inc. Conformal gel layers for light emitting diodes
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US8742655B2 (en) 2011-07-22 2014-06-03 Guardian Industries Corp. LED lighting systems with phosphor subassemblies, and/or methods of making the same
DE102011112710A1 (de) * 2011-09-07 2013-03-07 Osram Ag Beleuchtungsvorrichtung
EP3367445B1 (en) 2011-11-23 2020-07-29 Quarkstar LLC Light-emitting devices providing asymmetrical propagation of light
JP2013135084A (ja) * 2011-12-26 2013-07-08 Nitto Denko Corp 発光ダイオード装置の製造方法
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US20130187540A1 (en) 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
CN103249250A (zh) * 2012-02-08 2013-08-14 欧司朗股份有限公司 电路板及其制造方法和包括该电路板的照明装置
US9257617B2 (en) * 2012-02-10 2016-02-09 Koninklijke Philips N.V. Wavelength converted light emitting device
CN103375708B (zh) * 2012-04-26 2015-10-28 展晶科技(深圳)有限公司 发光二极管灯源装置
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
KR101961310B1 (ko) * 2012-07-09 2019-07-17 엘지이노텍 주식회사 발광 장치
US8952406B2 (en) 2012-07-12 2015-02-10 Micron Technology, Inc. Lighting devices including patterned optical components and associated devices, systems, and methods
TWI487147B (zh) * 2012-08-01 2015-06-01 Univ Nat Chiao Tung 發光二極體的封裝結構及其封裝方法
WO2014043410A1 (en) 2012-09-13 2014-03-20 Quarkstar Llc Light-emitting devices with reflective elements
WO2014138591A1 (en) * 2013-03-07 2014-09-12 Quarkstar Llc Illumination device with multi-color light-emitting elements
CN104756264B (zh) * 2012-09-13 2019-06-18 夸克星有限责任公司 具有远程散射元件和全内反射提取器元件的发光设备
JP6045864B2 (ja) 2012-09-20 2016-12-14 株式会社東芝 Led照明装置
US9188288B2 (en) * 2012-09-28 2015-11-17 Tsmc Solid State Lighting Ltd. LED emitter with improved white color appearance
KR101979825B1 (ko) 2012-11-19 2019-05-17 서울반도체 주식회사 발광디바이스 및 이를 포함하는 전자장치
KR101287633B1 (ko) * 2012-12-12 2013-07-24 유버 주식회사 칩온보드형 uv led 패키지의 제조방법
US20140209950A1 (en) * 2013-01-31 2014-07-31 Luxo-Led Co., Limited Light emitting diode package module
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US9752757B2 (en) 2013-03-07 2017-09-05 Quarkstar Llc Light-emitting device with light guide for two way illumination
US10355182B2 (en) * 2013-03-13 2019-07-16 Lumileds Llc Encapsulated LED lens with bottom reflectors
US10811576B2 (en) 2013-03-15 2020-10-20 Quarkstar Llc Color tuning of light-emitting devices
CZ2013301A3 (cs) 2013-04-22 2014-07-16 Crytur Spol. S R. O. Dioda emitující bílé světlo s monokrystalickým luminoforem a způsob výroby
CN105393374B (zh) * 2013-07-19 2019-05-28 亮锐控股有限公司 具有光学元件并且没有衬底载体的pc led
US9976710B2 (en) 2013-10-30 2018-05-22 Lilibrand Llc Flexible strip lighting apparatus and methods
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9899579B2 (en) 2013-11-07 2018-02-20 Koninklijke Philips N.V. Substrate for LED with total-internal reflection layer surrounding LED
KR101504251B1 (ko) 2013-11-21 2015-03-19 현대모비스 주식회사 레이저 광학모듈
EP3079177B1 (en) 2013-12-02 2020-03-25 Toshiba Hokuto Electronics Corporation Light-emission device, and production method therefor
JP6523179B2 (ja) * 2013-12-02 2019-05-29 東芝ホクト電子株式会社 発光ユニット、発光装置及び発光ユニットの製造方法
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN103943753A (zh) * 2014-03-06 2014-07-23 京东方科技集团股份有限公司 发光二极管光源及其制作方法、背光源及显示装置
CZ307024B6 (cs) 2014-05-05 2017-11-22 Crytur, Spol.S R.O. Světelný zdroj
WO2016059687A1 (ja) 2014-10-15 2016-04-21 株式会社 東芝 照明装置
KR102252994B1 (ko) 2014-12-18 2021-05-20 삼성전자주식회사 발광소자 패키지 및 발광소자 패키지용 파장 변환 필름
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
DE102015001723A1 (de) 2015-02-05 2016-08-11 Sergey Dyukin Die Methode der Verbesserung der Charakteristiken von Leuchtgeräten mit einer Stirnseitenbeleuchtung des Lichtleiters, die den Luminophor beinhalten, der mit Halbleiterstrukturen beleuchtet wird.
KR20170003182A (ko) 2015-06-30 2017-01-09 서울반도체 주식회사 발광 다이오드
US20170338387A1 (en) * 2015-06-30 2017-11-23 Seoul Semiconductor Co., Ltd. Light emitting diode
US10069050B2 (en) * 2015-09-25 2018-09-04 Lg Innotek Co., Ltd. Light emitting device, light emitting device package including the device, and lighting apparatus including the package
KR102392698B1 (ko) * 2015-10-28 2022-05-02 엘지디스플레이 주식회사 광원모듈 및 그를 포함하는 표시장치와, 광원모듈 제조 방법
KR20170075897A (ko) 2015-12-23 2017-07-04 삼성전자주식회사 발광 다이오드 패키지
US10132476B2 (en) 2016-03-08 2018-11-20 Lilibrand Llc Lighting system with lens assembly
TWI661582B (zh) * 2016-03-08 2019-06-01 National Central University 主動式抑制藍光溢漏之led結構
TWI657293B (zh) 2016-03-29 2019-04-21 友達光電股份有限公司 背光模組
DE102016113942A1 (de) * 2016-07-28 2018-02-15 HELLA GmbH & Co. KGaA Lichtquelle mit einer Primäroptik aus Silikon und Verfahren zur Herstellung der Lichtquelle
JP6906914B2 (ja) * 2016-08-31 2021-07-21 エルジー ディスプレイ カンパニー リミテッド 波長選択素子、光源装置及び表示装置
JP7108171B2 (ja) * 2016-12-27 2022-07-28 日亜化学工業株式会社 発光装置
US11296057B2 (en) 2017-01-27 2022-04-05 EcoSense Lighting, Inc. Lighting systems with high color rendering index and uniform planar illumination
US20180328552A1 (en) 2017-03-09 2018-11-15 Lilibrand Llc Fixtures and lighting accessories for lighting devices
CN107425111A (zh) * 2017-06-28 2017-12-01 常州市鑫嘉生物科技有限公司 一种白光led远程荧光粉封装方法
US10396121B2 (en) 2017-08-18 2019-08-27 Globalfoundries Inc. FinFETs for light emitting diode displays
US10263151B2 (en) 2017-08-18 2019-04-16 Globalfoundries Inc. Light emitting diodes
US10361349B2 (en) * 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US20190267526A1 (en) * 2018-02-26 2019-08-29 Semicon Light Co., Ltd. Semiconductor Light Emitting Devices And Method Of Manufacturing The Same
US11041609B2 (en) 2018-05-01 2021-06-22 Ecosense Lighting Inc. Lighting systems and devices with central silicone module
CN109659416B (zh) * 2018-11-09 2020-09-01 惠州市华星光电技术有限公司 显示组件、点胶装置及显示装置
US11353200B2 (en) 2018-12-17 2022-06-07 Korrus, Inc. Strip lighting system for direct input of high voltage driving power
JP2020188073A (ja) * 2019-05-10 2020-11-19 シャープ株式会社 Led光源基板及び照明装置
CN111128985A (zh) * 2019-12-25 2020-05-08 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111312068A (zh) * 2020-04-02 2020-06-19 深圳创维-Rgb电子有限公司 迷你灯珠、制作方法、背光源及显示设备
CN113707036A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
US20240072212A1 (en) * 2022-08-24 2024-02-29 Creeled, Inc. Sealing structures for light-emitting diode packages

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
CN1465106A (zh) * 2001-07-26 2003-12-31 松下电工株式会社 使用led的发光装置
EP1840977A1 (en) * 2004-12-24 2007-10-03 Kyocera Corporation Light-emitting device and illuminating device
CN101088176A (zh) * 2004-10-29 2007-12-12 3M创新有限公司 高亮度led封装

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4191943A (en) * 1976-10-18 1980-03-04 Fairchild Camera And Instrument Corporation Filler-in-plastic light-scattering cover
SG173925A1 (en) * 2002-03-22 2011-09-29 Nichia Corp Nitride phosphor and production process thereof, and light emitting device
KR100622209B1 (ko) * 2002-08-30 2006-09-19 젤코어 엘엘씨 개선된 효율을 갖는 코팅된 발광다이오드
US6717362B1 (en) * 2002-11-14 2004-04-06 Agilent Technologies, Inc. Light emitting diode with gradient index layering
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
WO2007080803A1 (ja) * 2006-01-16 2007-07-19 Matsushita Electric Industrial Co., Ltd. 半導体発光装置
JP2007243054A (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd 発光装置
JP4847793B2 (ja) * 2006-06-01 2011-12-28 京セラ株式会社 発光装置
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US20080144322A1 (en) * 2006-12-15 2008-06-19 Aizar Abdul Karim Norfidathul LED Light Source Having Flexible Reflectors
KR101623422B1 (ko) * 2007-06-27 2016-05-23 더 리전츠 오브 더 유니버시티 오브 캘리포니아 고 효율 백색 발광 다이오드들을 위한 광학 설계들
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
US7859190B2 (en) * 2008-09-10 2010-12-28 Bridgelux, Inc. Phosphor layer arrangement for use with light emitting diodes
US8168998B2 (en) * 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
CN1465106A (zh) * 2001-07-26 2003-12-31 松下电工株式会社 使用led的发光装置
CN101088176A (zh) * 2004-10-29 2007-12-12 3M创新有限公司 高亮度led封装
EP1840977A1 (en) * 2004-12-24 2007-10-03 Kyocera Corporation Light-emitting device and illuminating device

Also Published As

Publication number Publication date
US20100308354A1 (en) 2010-12-09
WO2010143086A1 (en) 2010-12-16
EP2441098B8 (en) 2018-09-05
US8168998B2 (en) 2012-05-01
US20120181565A1 (en) 2012-07-19
CN102460748A (zh) 2012-05-16
EP2441098B1 (en) 2018-07-25
TWI528602B (zh) 2016-04-01
KR20120024951A (ko) 2012-03-14
US8536608B2 (en) 2013-09-17
JP2012529766A (ja) 2012-11-22
TW201104929A (en) 2011-02-01
KR20170036113A (ko) 2017-03-31
EP2441098A1 (en) 2012-04-18

Similar Documents

Publication Publication Date Title
CN102460748B (zh) 具有远程磷光体层和反射基板的led
TWI407581B (zh) 色彩轉換發光二極體
JP4922189B2 (ja) 光学素子及び放射線を発する素子の製造方法及び光学素子ならびに放射線を発する素子
CN102549783B (zh) 用于led的反射基底
CN102918669B (zh) 光电子器件和用于制造光电子器件和复合结构的方法
US8735190B2 (en) Batwing LED with remote phosphor configuration
US9343613B2 (en) Phosphor in inorganic binder for LED applications
US9601670B2 (en) Method to form primary optic with variable shapes and/or geometries without a substrate
US9337398B2 (en) Phosphor in inorganic binder for LED applications
CN102473820A (zh) 具有硅树脂层和层叠远程磷光体层的led
US20150287891A1 (en) LED Packaging Structure Using Distant Fluorescent Powder Layer and Manufacturing Method Thereof
CN102473818A (zh) 颜色关于角度的变化减少的led
CN107750402A (zh) 发光二极管和用于制造发光二极管的方法
CN110197864A (zh) 半导体发光器件及其制造方法
US10680147B2 (en) Method of producing a lighting device
KR102017730B1 (ko) 반도체 발광소자용 예비 봉지재 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: California, USA

Co-patentee after: KONINKLIJKE PHILIPS N.V.

Patentee after: LUMILEDS LLC

Address before: California, USA

Co-patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Patentee before: Philips Ramildes Lighting Equipment Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200831

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: California, USA

Co-patentee before: KONINKLIJKE PHILIPS N.V.

Patentee before: LUMILEDS LLC