TWI407581B - 色彩轉換發光二極體 - Google Patents
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Description
本發明相關於發光二極體(LED),尤其相關於轉換LED光輸出到白光的技術。
發光二極體(LED)發出單色光。一般的實施係使用一藍光LED及照射一或多個磷光體以產生白光。該磷光體可加入紅及綠色成分,或可加入一黃綠色成分(例如一YAG磷光體)。此類技術包括在圍繞該藍光LED的一反射杯中沉積該(等)磷光體,或混合一黏合媒質(例如矽氧烷)中的該等磷光體及在該藍光LED上沉積該混合物。
使用具有藍光LED的黃綠色磷光體以產生高溫白光,其在視覺上並不悅目且色彩表現差。加入一紅色磷光體使該光較暖。
在圍繞該LED的一反射杯中設置該等磷光體造成一較大光源。此外,該杯中的磷光體/黏結材料的厚度可不同,要達成一期望色溫度及一致色彩有困難。此外,該杯的內壁阻礙側光,其限制該等可能的發射圖案。亦存在其他缺點。
當共同沉積二或多個磷光體時,難以產生一可預期且一致的光色彩,及在同一沉積製程期間,該等不同磷光體可不同地反應。例如,難以控制該相對磷光體厚度及密度,一磷光體的光轉換在另一磷光體的光轉換上有一效應,及不同磷光體通常具有不同物理特性(例如,密度差異及溫度膨脹係數)及化學特性,因此當經過同一沉積製程時不會反應相同。
需要的是一種使用數個磷光體及一藍光、紫外光(UV),或近UV光LED以產生白光的技術,其較容易實施及一致地產生期望的白光溫度。尤其期望產生在2000K至5000K溫度範圍中的暖白光(較紅)。
本發明揭示一種用以形成一白光發光二極體(LED)的技術。在一實施例中,該LED晶粒發出藍光。沉積一用以產生紅、黃、黃綠或綠光的第一磷光體,以一致地塗佈該LED晶粒。一合適沉積技術係電泳沉積(EPD),其藉由施加一電位到該晶粒及充電一溶液中的一磷光體,而將該磷光體電鍍該晶粒。該吸力將該磷光體均勻地塗佈該晶粒。極可控制該磷光體厚度及覆蓋範圍,因此極可預期該磷光體塗佈的效果。
在該結果LED結構之上沉積一黏結劑中的另一磷光體,以加入該剩餘色彩成分(例如紅色或綠色),及封裝該正形磷光體塗裝晶粒。
因該二不同沉積技術係可分開控制且易於控制以促成該期望色彩成分,因此由於該等磷光體的物理及化學可容性並非要素,該結果白光溫度(例如2000K至5000K)係高度可控制,及該發射色彩一致。
該暖白光LED的一用途是用在汽車的頭燈。
在一實施例中,一藍光LED晶粒陣列安裝在一副安裝上,及各LED具有一第一磷光體的正形塗層,其形成在各LED之上。接著各LED由一光阻模子圍繞,及在該模子中沉積注入有一第二磷光體的液態矽氧烷,以形成各LED之上具有良好界定尺寸的一封裝劑。接著固化該矽氧烷,及移除該光阻層。藉由一傳統小方塊切割步驟使該等LED彼此分開。該第一磷光體可為黃、黃綠,或綠色(例如一YAG磷光體),及該第二磷光體可為紅色(例如CaS磷光體)。在另一實施例中,該第一磷光體為紅色,及該第二磷光體為黃、黃綠,或綠色。
在另一實施例中,在一過度模製製程中沉積該矽氧烷-磷光體材料,其中在一副安裝上的一陣列中一致塗佈磷光體的數個LED放置在一模子之上,該模子中包含混合有磷粉的液態矽氧烷。各模子的形狀為透鏡形狀。接著固化該矽氧烷-磷光體材料,及分開該LED陣列及模子。各LED結構如今包括該二磷光體及一矽氧烷透鏡。接著可藉由一傳統小方塊切割程序使該等LED互相分開。
作為一初步事情,在一成長基板上形成一傳統藍光、UV光或近UV光LED。在使用的範例中,該LED為一GaN基LED,如一AlInGaN LED。通常,使用數個傳統技術在一藍寶石或SiC成長基板上成長一較厚n型GaN層。該較厚GaN層通常包括一低溫集結層及一或多個額外層,以便提供一低缺陷晶格結構以用於該n型包覆層及主動層。接著在該厚n型層之上形成一或多個n型包覆層,之後是一主動層,一或多個p型包覆層,及一p型接觸層(以用於金屬化)。
使用各種技術以增加到該等n型層的電存取。在一覆晶範例中,蝕刻掉該等p型層及主動層的數個部分以曝露一n型層以用於金屬化。依此,該p接點及n接點係在該晶片的同一側上,及可直接電連接到該等封裝(或副安裝)接觸墊。來自該n金屬接點的電流初始地橫向流經該n型層。對照地,在一垂直注入(非覆晶)LED中,在該晶片的一側上形成一n接點,及在該晶片的另一側上形成一p接點。該等p或n接點之一的電接點通常以一接線或一金屬橋接器製成,及另一接點直接黏合到一封裝(或副安裝)接觸墊。雖然亦可使用一垂直注入LED,但為求簡化,在該等不同範例中使用一覆晶LED。
可選擇地,一導電基板黏合到該等LED層(通常黏合到該等p型層),及移除該成長基板。
形成LED的數個範例揭示在美國專利第6,649,440號及6,274,399號中,該二文件讓渡給Lumileds照明公司,及以引用方式併入本文中。
一或多個LED晶粒的該等n及p接點可黏合到一副安裝上的數個個別接觸墊。該副安裝可為矽、陶瓷,或其他任何合適材料。該副安裝具有數個額外接觸墊,用以連接到一印刷電路板。該副安裝中的數個導電通孔可連接該等LED墊到該等印刷電路板墊。該副安裝可具有一金屬圖案,其使該副安裝上的多個LED互連一起。該副安裝可包含額外電路結構,如靜電放電(ESD)保護。多個副安裝可黏合到一印刷電路板,其通常包含數個金屬引線,用以互連該等LED,及用以連接該等LED到一電源供應。該電路板可互連各種串聯及/或並聯LED。
上述該等LED結構僅為可在本發明中使用的LED結構的一些範例。
圖1以側面圖說明二覆晶LED晶粒10,其安裝在一支撐結構12上。假設該等LED發出一藍光,其在420至490nm的範圍內。支撐結構12可為一副安裝(例如具有數個金屬引線的陶瓷或矽)、一金屬散熱器、一印刷電路板,或其他任何結構。在本範例中,支撐結構12係具有數個金屬墊14的一陶瓷副安裝,該等金屬墊藉由數個金凸塊16或藉由其他任何黏合構件而連接到LED晶粒10的該等n及p接觸墊。
一光阻層18在支撐結構12的表面之上沉積,及自LED晶粒10沉積有磷光體的該等表面移除(例如藉由掀開或蝕刻)。另一材料形成的一下填充層19可出現在各LED晶粒10下方。該下填充層提供熱轉移到支撐結構12,及保護LED晶粒10免受污染。
通常,LED晶粒10的該等曝露表面將為導電n或p型層,及電連接到支撐結構12上的數個金屬引線。若該等表面不導電,則LED晶粒10例如可浸入氧化銻錫溶液,及弄乾以提供LED晶粒10上的一適度導電塗層。
圖2顯示一個盆子,盆內在一溶液20中包含一第一磷粉。除了該等磷光體微粒之外,溶液20可包含一黏結材料及/或一充電劑。一示範溶液20可包括異丙醇及水以作為溶劑,氮化鋁作為一充電劑及黏合劑,及一摻雜釔鋁石榴石化合物作為磷光體微粒。在此範例中,用以一致塗佈LED晶粒10的第一磷光體,其當由LED晶粒10發出的藍光供應能量時將產生黃或黃綠光。習知此類由藍光供應能量時會產生數個特殊色彩的磷光體。
與溶液20接觸的一電極22耦合到一偏壓源24的一端,及LED晶粒10的該等導電表面(經由副安裝12上的數個墊)耦合到偏壓源24的另一端。由該偏壓產生的電場將該等磷光體微粒自溶液20抽出且到達LED晶粒10的該等導電表面上。
當該磷光體塗層夠厚時(由經驗判定),支撐結構12自溶液20移出且弄乾。該磷光體厚度中的任何變化較佳小於該磷光體平均厚度的15%,及較佳小於該平均厚度的10%。接著藉由傳統濕式(丙酮)或乾式(氧電漿)剝離而移除光阻層18。
圖3說明該等LED晶粒10表面上的結果磷光體正形層26。
作為藉由電泳沉積以形成該正形塗層的一替代例,亦可使用鏤版印刷。電泳沉積及鏤版印刷的進一步說明揭示在William David Collins III等人的美國專利第6,576,488號及6,642,652號中,該等專利讓渡給本受讓人,及以引用方式併入本文中。
在LED晶粒10上不沉積一黃色或黃綠色磷光體正形層,正形層26反而可為一紅色磷光體(CaS:Eu),其使用相同技術來沉積。習知此類由一藍光供應能量時會發出紅光(例如630至675 nm)的紅色磷光體。
在一實施例中,正形層26的厚度為15至35微米;然而,依期望色溫度、使用的磷光體及使用的特殊LED而定,其他厚度亦合適。
接下來,如圖4所示,在各LED晶粒10周圍沉積一光阻層28及選擇性地移除以產生一模子,用以形成一透鏡,其包括注入有一第二類型磷光體32的矽氧烷30。矽氧烷由於透明且耐用而特別適合形成一透鏡。然而,其他材料亦可適用。若正形層26係一黃色磷光體或黃綠色磷光體,則磷光體32應為一紅色磷光體以產生一暖白光。由LED晶粒10發出的一些藍光通過該二磷光體而漏出,及與該二磷光體色彩結合以產生白光。該紅色磷光體由該藍色及綠色成分兩者供應能量。若正形層26係一紅色磷光體,則磷光體32應為一綠色磷光體以產生白光。習知由藍光供應能量時會發出綠光(例如520至570 nm)的磷光體(例如摻雜Ce+3的YAG)。
顯示該液態矽氧烷-磷光體的一準確控制小滴正沉積到該模子中。設定該小滴的黏度,以便該凸彎液面形成該期望透鏡形狀(見圖5)。在使用一紅色磷光體32的一實施例中,一濃度為用於每5克矽氧烷有0.3克的CaS:Eu。可依經驗輕易判定矽氧烷中任何類型磷光體的所需濃度。藉由變化磷光體的正形塗層26的厚度及該矽氧烷中磷光體32的濃度,可輕易調整該色溫度。
在另一實施例中,在整個表面之上沉積注入有磷光體的該矽氧烷,及旋轉該結構以移除該模子外面的矽氧烷。圖5說明該結果透鏡34。在透鏡34之上可形成額外透鏡用以進一步影響該發光圖案。接著固化該矽氧烷。如今由該矽氧烷封裝或大體上封裝LED晶粒10。LED晶粒10的底表面可由一下填充層保護,因此不需該矽氧烷完全圍繞LED晶粒10以用於充分封裝。在一實施例中,正形層26及透鏡34的總厚度約為75微米或更大。
接著移除光阻層28。
圖6至8說明利用一矽氧烷-磷光體透鏡用以封裝LED晶粒10的另一技術。如上述,各LED晶粒在封裝前具有一磷光體正形層。
在圖6中,一模子40具有數個凹口42,其對應到各LED晶粒10之上一透鏡的期望形狀。模子40較佳由一金屬形成。在模子40之上放置一極薄非黏性膜44,其具有模子40的大致形狀。膜44為習知的傳統材料,其防止矽氧烷與金屬的沾黏。若該透鏡材料不會黏到該模子,則不需膜44。此可藉由使用一非黏性模子塗層、使用一非黏性模子材料,或使用造成一非黏性介面的模子製程而達成。此類製程可涉及選擇特定製程溫度以得到最小黏性。藉由不使用膜44,可形成較複雜的透鏡。
在圖7中,該等模子凹口42已填滿一可熱固化或可UV固化的液態透鏡材料46,其注入有一磷光體。此類磷光體先前已相對於圖4加以說明。透鏡材料46可為任何合適的光學透明材料,如矽氧烷、環氧樹脂,或一混合矽氧烷/環氧樹脂。一混合物可用以達成一匹配的熱膨脹係數(CTE)。矽氧烷及環氧樹脂具有一夠高折射率(大於1.4),足以大大地提高來自一AlInGaN LED的光抽取,以及作為一透鏡。一類型矽氧烷具有1.76的折射率。
在支撐結構12的周邊與模子40之間產生一真空密封,及該二件互相擠壓,以便各LED晶粒10插入液態透鏡材料46,及使透鏡材料46受到壓縮。
接著模子40加熱到約攝氏150度(或其他合適溫度)一段時間以硬化透鏡材料46。
接著支撐結構12與模子40分開。膜44令該結果硬化透鏡輕易自模子40脫出。接著移除膜44。
在另一實施例中,圖6中的LED晶粒10可先覆蓋一層注入有磷光體的矽氧烷(或其他黏結劑),及接著固化該矽氧烷。該等模子凹口42填滿矽氧烷或另一材料。接著當LED晶粒10放到該模子中時,該模子材料在該覆蓋材料之上定型以形成一透鏡。若不使用該覆蓋層作為一透鏡,則可使用此技術。
圖8說明各LED晶粒10之上具有一模製透鏡48的結果結構。在一實施例中,該模製透鏡的直徑介於1mm與5mm之間。透鏡48可為任何尺寸或形狀。該等結果LED藉由該藍光與該二磷光體發出的該光的結合而發出白光。
可藉由上述任一方法在正形層26及該第一矽氧烷-磷光體塗層之上形成一或多個額外透鏡。該一或多個額外透鏡可包含另一類型磷光體,如用以發出橘色光,以產生較悅目的光。
圖9以立體圖說明一結果結構,其中支撐結構12支撐一LED晶粒陣列,各晶粒具有一矽氧烷-磷光體透鏡48,其係使用本文中所述任一製程而形成。各LED(與其下副安裝部分)可藉由鋸開或破碎副安裝12而分開,以形成個別的LED晶粒。或者,支撐結構12可切割成小方塊以支撐數個子群組LED,或可不用切割成小方塊而使用。
注入有該磷光體的透鏡48不僅影響整體色彩,亦提高來自該LED晶粒的光抽取,折射該光以產生一期望發射圖案,及封裝該LED晶粒以保護該晶粒免受污染,添加機械強度,及保護任何線接合。
該等副安裝可安裝在一電路板上。該電路板可為一金屬板(例如鋁),其在一絕緣層上方具有數個金屬引線。
LED晶粒10亦可為一非覆晶晶粒,其具有一接線用以連接該等n或p型頂層到該副安裝上的一金屬墊。透鏡48可封裝該接線。
在一實施例中,該電路板本身可為支撐結構12。
圖10至13說明上述實施例的數個變化。可使用上述任一技術以形成此等變化。
圖10說明一LED晶粒50,其具有一磷光體正形層26,其中二不同磷光體52、53混合在封裝材料54(例如矽氧烷)中。例如,LED晶粒50可發出一UV或近UV光,正形層26可將一些該光轉換成紅色,及該等磷光體52、53分別將漏出的該LED光轉換成藍色及綠色。或者,正形層26可為該三色磷光體中任一者,及該等磷光體52、53可為該等剩餘磷光體。在材料54中可包括超過二類型磷光體以產生一期望白光溫度及較寬色譜。
圖11說明不具有一磷光體正形層的一藍光LED 56。封裝劑59中注入數個紅色及綠色磷光體57、58以產生白光。
圖12說明一LED晶粒60,其具有一磷光體正形層26及注入透鏡62的一或多個磷光體61,其中透鏡62模製為一富斯涅透鏡。透鏡62亦可為在一第一透鏡上過度模製的一第二透鏡。
圖13說明一LED晶粒64,其具有一磷光體正形層26及注入透鏡66的一或多個磷光體65,其中透鏡66模製為一廣角發射透鏡。透鏡66亦可為在一第一透鏡上過度模製的一第二透鏡。若當該透鏡自該模子移除時該透鏡材料夠軟,則可使用圖6至8的技術得到此一形狀。
在另一實施例中,藉由連續電泳製程而沉積二磷光體正形層,其中一層為YAG(黃、黃綠或綠色,依該摻雜劑而定),及另一層為CaS(紅色)。接著一矽氧烷透鏡封裝該LED晶粒。
本文中所述任一LED晶粒可發出藍光、UV光或近UV光。該等磷光體通常將用以產生具有2000K至5000K的色溫度範圍的白光。
本文中所述白光LED的一些用途包括:汽車的頭燈、閃光信號燈、內部照明燈、相機閃光燈,及液晶顯示器的背光。
雖然已顯示及說明本發明的數個特殊實施例,但熟諳此藝者明顯可知,不背離在較廣泛概念中的本發明,可作出數個變動及修改,及因此後附申請專利範圍應在其範疇內涵蓋此類包括在本發明的真精神及範疇內的變動及修改。
10、50、56、60、64...覆晶發光二極體(LED)晶粒
12...支撐結構
14...金屬墊
16...金凸塊
18...光阻層
19...下填充層
20...溶液
22...電極
24...偏壓源
26...磷光體正形層
28...光阻層
30...矽氧烷
32、52、53、57、58、61、65...磷光體
34、48、62、66...透鏡
40...模子
42...凹口
44...膜
46...透鏡材料
54、59...封裝材料
圖1以側面圖說明一藍光LED陣列,其安裝在一副安裝上,該等LED具有數個導電表面。
圖2說明該LED陣列浸入一溶液中,該溶液包含數個帶電磷光體微粒,用以利用該磷光體一致地塗佈該等LED的該等導電表面。
圖3說明該等結果LED,其具有該磷光體正形塗層。
圖4說明在圖3的副安裝之上形成的一光阻層,以形成一用於矽氧烷的模子,該矽氧烷注入有一第二類型磷光體。
圖5說明移除該光阻層之前,包含有數個磷光體微粒的該結果矽氧烷,其形成一封裝透鏡。
圖6、7及8說明一過度模製製程,其用以形成一包含有數個磷光體微粒的封裝透鏡。
圖9以立體圖說明一發白光的LED陣列,其係使用本文中所述方法來形成。
圖10以側面圖說明一藍光、UV光或近UV光LED,其具有一類型磷光體的正形塗層及包含有一磷光體或二不同磷光體的一矽氧烷透鏡,以產生白光。
圖11以側面圖說明未具有一正形塗層的一藍光LED,其具有包含有二不同磷光體的矽氧烷透鏡以產生白光。
圖12以側面圖說明上述任一LED,其中形成包含有一或二類型磷光體的該矽氧烷透鏡以作為一富斯涅透鏡。
圖13以側面圖說明上述任一LED,其中形成包含有一或二類型磷光體的該矽氧烷透鏡以作為一廣角發射透鏡。
12...支撐結構
26...磷光體正形層
50...發光二極體(LED)晶粒
52、53...磷光體
54...封裝材料
Claims (15)
- 一種發光二極體(LED)結構,包括:一發光二極體(LED)晶粒,其發出藍色光;一實質上平坦之第一磷光體層,其經直接設置在該發光二極體(LED)晶粒之至少一頂部表面上,且該第一磷光體具有將該發光二極體(LED)光轉換成不同波長之光的特性,使得該來自該發光二極體(LED)晶粒之藍色光與該第一磷光體所產生的光之結合產生具有一第一色溫之白光;及一經注入於一透明黏結劑中之第二磷光體,該黏結劑實質上封裝該發光二極體(LED)晶粒與該第一磷光體,該含有該第二磷光體之透明黏結劑形成一圓形的外透鏡(rounded outer lens),該第二磷光體具有將具有該第一色溫之該白光轉換成具有一第二色溫之白光的特性。
- 如請求項1之結構,其中自該發光二極體(LED)晶粒發出之光係藍光,其在420至490nm之範圍內。
- 如請求項1之結構,其中該白光具有一色溫度,其在2000K至5000K之範圍中。
- 如請求項1之結構,其中當由該發光二極體(LED)光供應能量時該第一磷光體產生一黃光或黃綠光,及當由該發光二極體(LED)光供應能量時該第二磷光體產生一紅光。
- 如請求項1之結構,其中當由該發光二極體(LED)光供應 能量時該第一磷光體產生一綠光,及當由該發光二極體(LED)光供應能量時該第二磷光體產生一紅光。
- 如請求項1之結構,尚包括一第三磷光體,其與該黏結劑中之該第二磷光體混合,用以自至少該第一磷光體、該第二磷光體與該第三磷光體之結合產生白光。
- 如請求項1之結構,其中該第一磷光體及該第二磷光體係用以產生該白光之該等僅有磷光體。
- 如請求項1之結構,其中該第一磷光體係藉由電泳而沉積。
- 如請求項1之結構,其中該第一磷光體係一YAG磷光體,及該第二磷光體係一CaS磷光體。
- 如請求項1之結構,其中該第一磷光體係一CaS磷光體,及該第二磷光體係一YAG磷光體。
- 如請求項1之結構,其中該透明黏結劑係矽氧烷。
- 如請求項1之結構,其中該正形塗層之一厚度係在15至35微米之範圍中。
- 如請求項1之結構,其中該第一磷光體正形塗層之厚度中之任何變化係小於該第一磷光體之一平均厚度之約15%。
- 如請求項1之結構,其中該透明黏結劑形成該透鏡以達成一期望白光發射圖案。
- 一種用以製造一發光二極體(LED)結構之方法,包括:提供一發光二極體(LED)晶粒,其發出一藍色波長之光; 利用一第一沉積技術,直接在該發光二極體(LED)晶粒之至少一頂部表面上形成一實質上平坦之第一磷光體層,且該第一磷光體具有將該發光二極體(LED)光轉換成不同波長之光的特性,使得該來自該發光二極體(LED)晶粒之藍色光與該第一磷光體所產生的光之結合產生具有一第一色溫之白光;及利用一不同於該第一沉積技術之第二沉積技術,將該發光二極體(LED)晶粒與該第一磷光體封裝在一經注入第二磷光體之一透明黏結劑中,該含有該第二磷光體之透明黏結劑形成一圓形的外透鏡,該第二磷光體具有將具有該第一色溫之該白光轉換成具有一第二色溫之白光的特性。
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Application Number | Priority Date | Filing Date | Title |
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US11/212,280 US7847302B2 (en) | 2005-08-26 | 2005-08-26 | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
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Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090286250A1 (en) * | 2006-05-19 | 2009-11-19 | James Arthur Hayward | Incorporating soluble security markers into cyanoacrylate solutions |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
DE102005019376A1 (de) * | 2005-04-26 | 2006-11-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lumineszenzkonversions-LED |
TWI306673B (en) * | 2005-08-31 | 2009-02-21 | Chipmos Technologies Inc | Method for bump manufacturing and chip package structure |
KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
US8735920B2 (en) * | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US8367945B2 (en) * | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
KR100946015B1 (ko) * | 2007-01-02 | 2010-03-09 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 lcd 백라이트용 광원모듈 |
JP2008234908A (ja) * | 2007-03-19 | 2008-10-02 | Nec Lighting Ltd | Ledスポットライト |
TWI392111B (zh) * | 2007-04-11 | 2013-04-01 | Everlight Electronics Co Ltd | 發光二極體裝置的螢光粉塗佈製程 |
EP2142843B1 (en) * | 2007-05-08 | 2016-12-14 | Cree, Inc. | Lighting device and lighting method |
KR20100044217A (ko) * | 2007-07-16 | 2010-04-29 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 변환능을 결정하는 장치 |
DE102007039291A1 (de) * | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
TWI396298B (zh) * | 2007-08-29 | 2013-05-11 | Everlight Electronics Co Ltd | 發光半導體元件塗佈螢光粉的方法及其應用 |
JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
DE102007049310A1 (de) | 2007-10-15 | 2009-04-16 | Automotive Lighting Reutlingen Gmbh | Leuchtmodul für einen Scheinwerfer oder eine Leuchte eines Kraftfahrzeugs |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US7939350B2 (en) * | 2008-01-03 | 2011-05-10 | E. I. Du Pont De Nemours And Company | Method for encapsulating a substrate and method for fabricating a light emitting diode device |
KR100980115B1 (ko) * | 2008-01-07 | 2010-09-07 | 서울대학교산학협력단 | 발광 다이오드 코팅 방법 |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US8940561B2 (en) * | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
US20090309114A1 (en) * | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
DE102008029191A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung zur Hinterleuchtung eines Displays sowie ein Display mit einer solchen Beleuchtungseinrichtung |
CN101946115B (zh) * | 2008-02-21 | 2014-04-30 | 皇家飞利浦电子股份有限公司 | 仿gls的led光源 |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
KR100973238B1 (ko) | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
CN102017198A (zh) * | 2008-04-23 | 2011-04-13 | 皇家飞利浦电子股份有限公司 | 发光器件 |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
JP2011524064A (ja) | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | 量子閉じ込め半導体ナノ粒子を含有する固体照明装置 |
CN101621054A (zh) * | 2008-07-01 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管光源装置 |
TWI499076B (zh) | 2008-07-03 | 2015-09-01 | Samsung Electronics Co Ltd | 波長轉換之發光二極體晶片及包含該發光二極體晶片之發光裝置 |
CN105679922B (zh) * | 2008-10-01 | 2018-07-17 | 皇家飞利浦电子股份有限公司 | 用于增大的光提取和非黄色的断开状态颜色的在封装剂中具有颗粒的led |
DE102008054029A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
JP2010129583A (ja) * | 2008-11-25 | 2010-06-10 | Citizen Electronics Co Ltd | 照明装置 |
JP2010267646A (ja) * | 2009-05-12 | 2010-11-25 | Nichia Corp | 発光装置 |
WO2010151600A1 (en) | 2009-06-27 | 2010-12-29 | Michael Tischler | High efficiency leds and led lamps |
US8273588B2 (en) * | 2009-07-20 | 2012-09-25 | Osram Opto Semiconductros Gmbh | Method for producing a luminous device and luminous device |
WO2011040745A2 (ko) * | 2009-09-30 | 2011-04-07 | 서울대학교 산학협력단 | 영상 처리 기반 리소그래피 시스템 및 표적물 코팅 방법 |
US8653539B2 (en) | 2010-01-04 | 2014-02-18 | Cooledge Lighting, Inc. | Failure mitigation in arrays of light-emitting devices |
US9480133B2 (en) | 2010-01-04 | 2016-10-25 | Cooledge Lighting Inc. | Light-emitting element repair in array-based lighting devices |
WO2011109442A2 (en) * | 2010-03-02 | 2011-09-09 | Oliver Steven D | Led packaging with integrated optics and methods of manufacturing the same |
US8643038B2 (en) | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
US20110220920A1 (en) * | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
US8384105B2 (en) * | 2010-03-19 | 2013-02-26 | Micron Technology, Inc. | Light emitting diodes with enhanced thermal sinking and associated methods of operation |
GB2479921A (en) * | 2010-04-30 | 2011-11-02 | Led Semiconductor Co Ltd | Encapsulation structure for light emitting diode |
US8193546B2 (en) * | 2010-06-04 | 2012-06-05 | Pinecone Energies, Inc. | Light-emitting-diode array with polymer between light emitting devices |
KR101372084B1 (ko) | 2010-06-29 | 2014-03-07 | 쿨레지 라이팅 인크. | 항복형 기판을 갖는 전자 장치 |
DE102011107892A1 (de) | 2011-07-18 | 2013-01-24 | Heraeus Noblelight Gmbh | Beschichtungsverfahren für einoptoelektronisches Chip-On-Board-Modul |
DE102010044471A1 (de) * | 2010-09-06 | 2012-03-08 | Heraeus Noblelight Gmbh | Beschichtungsverfahren für ein optoelektronisches Chip-On-Board-Modul |
KR20130043685A (ko) | 2010-09-06 | 2013-04-30 | 헤레우스 노블라이트 게엠베하 | 광전자 칩-온-보드 모듈을 위한 코팅 방법 |
US20120056228A1 (en) * | 2010-09-07 | 2012-03-08 | Phostek, Inc. | Led chip modules, method for packaging the led chip modules, and moving fixture thereof |
CN102451812B (zh) * | 2010-10-26 | 2014-02-19 | 展晶科技(深圳)有限公司 | 荧光粉涂布方法 |
CN104851957B (zh) * | 2010-10-27 | 2019-06-11 | 晶元光电股份有限公司 | 发光二极管封装结构 |
US9024341B2 (en) * | 2010-10-27 | 2015-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Refractive index tuning of wafer level package LEDs |
TWI459601B (zh) * | 2010-10-28 | 2014-11-01 | Advanced Optoelectronic Tech | 螢光粉塗佈方法 |
US8193015B2 (en) * | 2010-11-17 | 2012-06-05 | Pinecone Energies, Inc. | Method of forming a light-emitting-diode array with polymer between light emitting devices |
TWI408794B (zh) * | 2011-01-26 | 2013-09-11 | Paragon Sc Lighting Tech Co | 混光式多晶封裝結構 |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
JP5962102B2 (ja) * | 2011-03-24 | 2016-08-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8906263B2 (en) | 2011-06-03 | 2014-12-09 | Cree, Inc. | Red nitride phosphors |
US8814621B2 (en) | 2011-06-03 | 2014-08-26 | Cree, Inc. | Methods of determining and making red nitride compositions |
US8729790B2 (en) | 2011-06-03 | 2014-05-20 | Cree, Inc. | Coated phosphors and light emitting devices including the same |
US8747697B2 (en) | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
DE102011107893A1 (de) | 2011-07-18 | 2013-01-24 | Heraeus Noblelight Gmbh | Optoelektronisches Modul mit verbesserter Optik |
DE102011107895B4 (de) | 2011-07-18 | 2020-11-05 | Heraeus Noblelight Gmbh | Optoelektronisches Modul mit Linsensystem |
DE102011111980A1 (de) * | 2011-08-29 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
JP6038443B2 (ja) * | 2011-11-21 | 2016-12-07 | スタンレー電気株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
DE102012008637A1 (de) * | 2012-05-02 | 2013-11-07 | Heraeus Noblelight Gmbh | Optisches Modul mit Ausformung zur Montage |
US8877561B2 (en) | 2012-06-07 | 2014-11-04 | Cooledge Lighting Inc. | Methods of fabricating wafer-level flip chip device packages |
US9034672B2 (en) * | 2012-06-19 | 2015-05-19 | Epistar Corporation | Method for manufacturing light-emitting devices |
TW201405876A (zh) * | 2012-07-25 | 2014-02-01 | Lextar Electronics Corp | 螢光膠塗佈系統及使用其形成之發光二極體封裝結構與其螢光膠塗佈方法 |
KR101948207B1 (ko) | 2012-09-24 | 2019-04-26 | 삼성디스플레이 주식회사 | 백색 발광 소자, 이를 포함하는 백색 발광 패널, 백색 발광 패널의 제조 방법, 및 백색 발광 소자를 포함하는 표시 장치 |
DE102012218786B3 (de) * | 2012-10-16 | 2014-02-13 | Osram Gmbh | Herstellen einer linearen Leuchtvorrichtung und entsprechende Leuchtvorrichtung |
TWI629314B (zh) * | 2012-12-21 | 2018-07-11 | 美商道康寧公司 | 壓縮成形或積層用熱熔型硬化性聚矽氧組合物 |
US8847261B1 (en) | 2013-03-14 | 2014-09-30 | Cooledge Lighting Inc. | Light-emitting devices having engineered phosphor elements |
US10690325B2 (en) | 2013-05-13 | 2020-06-23 | Riverpoint Medical, Llc | Medical headlamp optical arrangement permitting variable beam width |
US20140334132A1 (en) | 2013-05-13 | 2014-11-13 | River Point, Llc | Medical Headlamp Optics |
US9234653B2 (en) | 2013-05-13 | 2016-01-12 | Riverpoint Medical, Llc | Medical headlamp optical arrangement permitting variable beam width |
US9091428B2 (en) | 2013-05-13 | 2015-07-28 | Riverpoint Medical, Llc | Medical headlamp assembly having interchangeable headlamp types |
JP6291735B2 (ja) * | 2013-07-05 | 2018-03-14 | 日亜化学工業株式会社 | 発光装置 |
EP3022779B1 (en) * | 2013-07-19 | 2020-03-18 | Lumileds Holding B.V. | Pc led with optical element and without substrate carrier |
KR102237168B1 (ko) * | 2013-07-24 | 2021-04-07 | 에피스타 코포레이션 | 파장-변환 재료를 포함하는 발광 다이 및 관련된 방법 |
DE102013109031B4 (de) | 2013-08-21 | 2021-11-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
KR102099439B1 (ko) * | 2013-10-08 | 2020-04-09 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
US9707707B2 (en) | 2013-10-18 | 2017-07-18 | Riverpoint Medical, Llc | Comfortable medical headlamp assembly |
WO2015077609A1 (en) * | 2013-11-22 | 2015-05-28 | Glo Ab | Methods of locating differently shaped or differently sized led die in a submount |
WO2015089535A1 (de) * | 2013-12-20 | 2015-06-25 | Zumtobel Lighting Gmbh | Optisches element für eine lichtquelle |
CN103915546B (zh) * | 2014-03-14 | 2016-06-15 | 苏州晶品光电科技有限公司 | 半导体led荧光封装结构 |
US9099618B1 (en) * | 2014-04-11 | 2015-08-04 | Grote Industries, Llc | Lighting device having a patterned conformal coating doped with a luminescent material |
CN107210352B (zh) | 2015-01-19 | 2020-08-11 | Lg 伊诺特有限公司 | 发光器件 |
CN105261613B (zh) * | 2015-10-29 | 2018-07-31 | 广州硅能照明有限公司 | Led光源组件及其封装方法 |
US10274164B2 (en) | 2016-10-21 | 2019-04-30 | Signify Holding B.V. | Lighting device comprising a plurality of different light sources with similar off-state appearance |
DE112017007578T5 (de) * | 2017-05-24 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Lichtemittierende vorrichtung und verfahren zum produzie-ren einerlichtemittierenden vorrichtung |
DE102017116279B4 (de) * | 2017-07-19 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von Konversionselementen und optoelektronisches Bauelement |
US10634330B1 (en) | 2017-10-31 | 2020-04-28 | Riverpoint Medical, Llc | Headband assembly |
JP7100246B2 (ja) * | 2018-06-01 | 2022-07-13 | 日亜化学工業株式会社 | 発光装置 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
TW200421683A (en) * | 2002-09-27 | 2004-10-16 | Lumileds Lighting Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
TW200505050A (en) * | 2003-03-10 | 2005-02-01 | Toyoda Gosei Kk | Solid-state component device and manufacturing method thereof |
TW200506026A (en) * | 2003-03-17 | 2005-02-16 | Koninkl Philips Electronics Nv | Illumination system comprising a radiation source and a fluorescent material |
US20050151147A1 (en) * | 2003-12-22 | 2005-07-14 | Kunihiro Izuno | Semiconductor device and method for manufacturing the same |
TW200527716A (en) * | 2003-10-30 | 2005-08-16 | Kyocera Corp | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48102585A (zh) * | 1972-04-04 | 1973-12-22 | ||
JPH0315129A (ja) * | 1989-06-09 | 1991-01-23 | Omron Corp | 反射型光センサ |
US5130531A (en) * | 1989-06-09 | 1992-07-14 | Omron Corporation | Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens |
US5102579A (en) * | 1990-03-21 | 1992-04-07 | Usr Optonix, Inc. | Method for preparing sulfide phosphors |
US5091769A (en) * | 1991-03-27 | 1992-02-25 | Eichelberger Charles W | Configuration for testing and burn-in of integrated circuit chips |
US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5847507A (en) * | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
US5886401A (en) * | 1997-09-02 | 1999-03-23 | General Electric Company | Structure and fabrication method for interconnecting light emitting diodes with metallization extending through vias in a polymer film overlying the light emitting diodes |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
TW414924B (en) * | 1998-05-29 | 2000-12-11 | Rohm Co Ltd | Semiconductor device of resin package |
US6680569B2 (en) * | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
US6521916B2 (en) * | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
JP4406490B2 (ja) * | 2000-03-14 | 2010-01-27 | 株式会社朝日ラバー | 発光ダイオード |
US6998281B2 (en) * | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
TWI329367B (en) * | 2002-06-13 | 2010-08-21 | Cree Inc | Saturated phosphor solid state emitter |
US6682331B1 (en) * | 2002-09-20 | 2004-01-27 | Agilent Technologies, Inc. | Molding apparatus for molding light emitting diode lamps |
US6717353B1 (en) * | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
US7423296B2 (en) * | 2003-02-26 | 2008-09-09 | Avago Technologies Ecbu Ip Pte Ltd | Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers |
JP2004296830A (ja) * | 2003-03-27 | 2004-10-21 | Solidlite Corp | 白色ledの製造方法 |
US7671529B2 (en) * | 2004-12-10 | 2010-03-02 | Philips Lumileds Lighting Company, Llc | Phosphor converted light emitting device |
-
2005
- 2005-08-26 US US11/212,280 patent/US7847302B2/en active Active
-
2006
- 2006-08-21 CN CN200680031192.6A patent/CN101248539A/zh active Pending
- 2006-08-21 WO PCT/IB2006/052875 patent/WO2007023439A2/en active Application Filing
- 2006-08-21 EP EP06795708.4A patent/EP1922767B1/en active Active
- 2006-08-23 TW TW095130991A patent/TWI407581B/zh active
- 2006-08-25 JP JP2006258017A patent/JP5106813B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
TW200421683A (en) * | 2002-09-27 | 2004-10-16 | Lumileds Lighting Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
TW200505050A (en) * | 2003-03-10 | 2005-02-01 | Toyoda Gosei Kk | Solid-state component device and manufacturing method thereof |
TW200506026A (en) * | 2003-03-17 | 2005-02-16 | Koninkl Philips Electronics Nv | Illumination system comprising a radiation source and a fluorescent material |
TW200527716A (en) * | 2003-10-30 | 2005-08-16 | Kyocera Corp | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
US20050151147A1 (en) * | 2003-12-22 | 2005-07-14 | Kunihiro Izuno | Semiconductor device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2007023439A3 (en) | 2007-05-31 |
US20070045761A1 (en) | 2007-03-01 |
JP2007067420A (ja) | 2007-03-15 |
JP5106813B2 (ja) | 2012-12-26 |
US7847302B2 (en) | 2010-12-07 |
CN101248539A (zh) | 2008-08-20 |
EP1922767B1 (en) | 2016-08-17 |
WO2007023439A2 (en) | 2007-03-01 |
EP1922767A2 (en) | 2008-05-21 |
TW200731565A (en) | 2007-08-16 |
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