GB2479921A - Encapsulation structure for light emitting diode - Google Patents
Encapsulation structure for light emitting diode Download PDFInfo
- Publication number
- GB2479921A GB2479921A GB1007176A GB201007176A GB2479921A GB 2479921 A GB2479921 A GB 2479921A GB 1007176 A GB1007176 A GB 1007176A GB 201007176 A GB201007176 A GB 201007176A GB 2479921 A GB2479921 A GB 2479921A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitting diode
- light
- encapsulation
- transparent
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000005286 illumination Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The structure is assembled from an encapsulation base 10, light emitting diode (LED) chips 12 and transparent encapsulation material 14. The LED chips 12 are mounted on an encapsulation region of the base 10, after which the transparent encapsulation material 14 is used to overlay the LED chips. Accordingly, the light rays produced by the LED chips 12 can be emitted from the side areas. When the LED chips 12 are mounted and joined to the base 10, then the brightness at the connected areas is maintained, thus eliminating uneven brightness. The encapsulation material is formed from silicone which contains phosphor.
Description
ENCAPSULATION STRUCTURE FOR LIGHT-EMITTING DIODE
BACKGROUND OF THE INVENTION
(a) Field of the Invention
The present invention provides a light-emitting diode, and more particularly provides an encapsulation structure for light-emitting diode able to maintain and achieve equal brightness at connected areas of a plurality of light-emitting diodes.
(b) Description of the Prior Art
Referring to FIG. 1, which shows a light-emitting diode encapsulation structure of the prior art, in which at least one light-emitting diode chip is mounted on an encapsulation base 2, and opaque encapsulation material 22 (such as: epoxy resin or acrylic) is used to encircle the periphery of the light-emitting diode chip 20. Accordingly, when the light-emitting diode chip 20 is mounted with and joined to the encapsulation base 2, because the opaque encapsulation material 22 impedes side light from the light-emitting diode chip 20, thus, light at the area where the light-emitting diode chip 20 and the encapsulation base 2 join is evidently darker compare to the non-joining area. Hence, when using such a light-emitting diode encapsulation structure in an extensive illuminating area, then the naked eye can detect the uneven brightness of light and dark areas.
Thus, it is the strong desire of the inventor and manufacturers engaged in related art and purpose of the present invention to research, improve and resolve the problems and shortcomings of the
aforementioned prior art.
SUMMARY OF THE INVENTION
Hence, in light of the shortcomings of the aforementioned prior art, the inventor of the present invention, having collected related data, and through evaluation and consideration from many aspects, as well as having accumulated years of experience in related arts, through continuous testing and improvements, has designed a new encapsulation structure for light-emitting diode able to maintain, and achieve equal brightness at connected areas of a plurality of light-emitting diodes.
The primary objective of the present invention lies in an encapsulation structure for light-emitting diode, primarily assembled from an encapsulation base, light-emitting diode chips and transparent encapsulation material, in which the light-emitting diode chips are mounted on an encapsulation region of the encapsulation base, after which the transparent encapsulation material is used to overlay the predetermined positions of the light-emitting diode chips. The transparent encapsulation material (such as: silicone) is doped with a predetermined measure of phosphor (fluorescent powder). Accordingly, the light rays produced by the light-emitting diode chips can be emitted from the side areas, and when the light-emitting diode chips are mounted and joined to the encapsulation bases, then brightness at the connected areas can be maintained, and uneven brightness will be prevented from occurring.
Another objective of the present invention lies in doping the transparent encapsulation material with phosphor (fluorescent powder) of different composition to achieve different color temperature and conform with customization conditions.
To enable a further understanding of said objectives and the technological methods of the invention herein, a brief description of the drawings is provided below followed by a detailed description of the preferred embodiments.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a light-emitting diode encapsulation structure of the
prior art.
FIG. 2 is an elevational schematic view of a preferred embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of the preferred embodiment of the present invention.
FIG. 4 is a schematic view depicting a cross section of an operating state of the preferred embodiment according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring to FIG. 2 and FIG. 3, which show an elevational schematic view and a schematic cross-sectional view respectively of a preferred embodiment of the present invention, and it can be clearly seen from the drawings that the present invention comprises an encapsulation structure for light-emitting diode, in which an encapsulation structure 1 is primarily assembled from an encapsulation base 10, light-emitting diode chips 12 and transparent encapsulation material 14. An encapsulation region 102 is defined on the encapsulation base 10, and at least one of the light-emitting diode chips 12 is mounted on the encapsulation region 102, after which the transparent encapsulation material 14 is used to overlay the predetermined positions of the light-emitting diode chips 12. Because the encapsulation material 14 is a transparent material (such as: silicone), thus, the light-emitting diode chips 12 are able to produce side light, thereby expanding the illumination range. In addition, the transparent encapsulation material 14 is doped with a predetermined measure of phosphor (fluorescent powder), and phosphor (fluorescent powder) of different composition enables achieving different color temperature.
According to the aforementioned structure and constructional design, circumstances during operational use of the present invention are described hereinafter. Referring together with FIG. 4, which shows a schematic view depicting a cross section view of an operating state of the preferred embodiment according to the present invention, and it can be clearly seen from the drawing that when using the encapsulation base 10 mounted with the light-emitting diode chips 12 to increase illumination range, then the illumination range can be freely changed by merely using a series or parallel mounting means. Because the transparent encapsulation material 14 overlaying the light-emitting diode chips 12 enables side light from the light-emitting diode chips 12 to be transmitted therethrough, thus, regardless of how extensive the illuminating area being used, illumination effectiveness thereof is extremely uniform, and uneven brightness of light and dark regions will not occur.
In conclusion, the encapsulation structure for light-emitting diode of the present invention is clearly able to achieve the effectiveness and objectives as disclosed when in use, and is indeed a practical and exceptional invention that complies with the essential elements as required for a new patent application. Accordingly, a new patent application is proposed herein.
It is of course to be understood that the embodiments described herein are merely illustrative of the principles of the invention and that a wide variety of modifications thereto may be effected by persons skilled in the art without departing from the spirit and scope of the invention as set forth in the following claims.
Claims (5)
- What is claimed is: 1. An encapsulation structure for light-emitting diode, comprising: an encapsulation base, an encapsulation region is defined on the encapsulation base; at least one light-emitting diode chip, the light-emitting diode chips are mounted on the encapsulation the region; and a transparent encapsulation material, the transparent encapsulation material overlays the predetermined positions of the light-emitting diode chips.
- 2. The encapsulation structure for light-emitting diode according to claim 1, wherein the transparent encapsulation material is doped with a predetermined measure of phosphor (fluorescent powder).
- 3. The encapsulation structure for light-emitting diode according to claim 1, wherein the transparent encapsulation material is silicone.
- 4. The encapsulation structure for light-emitting diode according to claim 2, wherein the transparent encapsulation material is silicone.
- 5. Encapsulation structure for light-emitting diode substantially as herein described above and illustrated in the accompanying drawings of FIG. 2 to FIG. 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1007176A GB2479921A (en) | 2010-04-30 | 2010-04-30 | Encapsulation structure for light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1007176A GB2479921A (en) | 2010-04-30 | 2010-04-30 | Encapsulation structure for light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201007176D0 GB201007176D0 (en) | 2010-06-09 |
| GB2479921A true GB2479921A (en) | 2011-11-02 |
Family
ID=42271037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1007176A Withdrawn GB2479921A (en) | 2010-04-30 | 2010-04-30 | Encapsulation structure for light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2479921A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
| WO2007023439A2 (en) * | 2005-08-26 | 2007-03-01 | Koninklijke Philips Electronics N.V. | Color converted light emitting diode |
| WO2007049187A1 (en) * | 2005-10-28 | 2007-05-03 | Koninklijke Philips Electronics N.V. | Laminating encapsulant film containing phosphor over leds |
| JP2008071954A (en) * | 2006-09-14 | 2008-03-27 | Mimaki Denshi Buhin Kk | Light source device |
| US20090321759A1 (en) * | 2008-06-27 | 2009-12-31 | Tao Xu | Surface-textured encapsulations for use with light emitting diodes |
-
2010
- 2010-04-30 GB GB1007176A patent/GB2479921A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
| WO2007023439A2 (en) * | 2005-08-26 | 2007-03-01 | Koninklijke Philips Electronics N.V. | Color converted light emitting diode |
| WO2007049187A1 (en) * | 2005-10-28 | 2007-05-03 | Koninklijke Philips Electronics N.V. | Laminating encapsulant film containing phosphor over leds |
| JP2008071954A (en) * | 2006-09-14 | 2008-03-27 | Mimaki Denshi Buhin Kk | Light source device |
| US20090321759A1 (en) * | 2008-06-27 | 2009-12-31 | Tao Xu | Surface-textured encapsulations for use with light emitting diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201007176D0 (en) | 2010-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |