CN102446739B - 基材蚀刻系统与制程的方法及设备 - Google Patents

基材蚀刻系统与制程的方法及设备 Download PDF

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Publication number
CN102446739B
CN102446739B CN201110402772.4A CN201110402772A CN102446739B CN 102446739 B CN102446739 B CN 102446739B CN 201110402772 A CN201110402772 A CN 201110402772A CN 102446739 B CN102446739 B CN 102446739B
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flow
gas
chamber
line
controller
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Chinese (zh)
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CN102446739A (zh
Inventor
夏尔马·V·帕马斯
乔恩·C·法
科哈伊德·西拉朱迪茵
伊兹拉·R·高德
詹姆斯·P·克鲁斯
斯科特·奥尔斯则维斯基
罗伊·C·南古伊
萨拉弗野特·辛加
道格拉斯·A·布池贝尔格尔
札瑞德·A·李
张春雷
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Drying Of Semiconductors (AREA)
CN201110402772.4A 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备 Active CN102446739B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
CN2009801103642A CN101978479A (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

Related Parent Applications (1)

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CN2009801103642A Division CN101978479A (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

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CN102446739A CN102446739A (zh) 2012-05-09
CN102446739B true CN102446739B (zh) 2016-01-20

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CN2009801103642A Pending CN101978479A (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

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US (1) US20090272717A1 (https=)
JP (1) JP5608157B2 (https=)
KR (1) KR20100128333A (https=)
CN (2) CN102446739B (https=)
TW (1) TWI538045B (https=)
WO (1) WO2009117565A2 (https=)

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US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
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TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
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JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
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JP7401458B2 (ja) * 2018-05-22 2023-12-19 イーティーエックス コーポレーション 二次元材料を移すための方法及び装置
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JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
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WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
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Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
CN102446739A (zh) 2012-05-09
WO2009117565A3 (en) 2009-11-12
WO2009117565A2 (en) 2009-09-24
JP5608157B2 (ja) 2014-10-15
TWI538045B (zh) 2016-06-11
CN101978479A (zh) 2011-02-16
KR20100128333A (ko) 2010-12-07
US20090272717A1 (en) 2009-11-05
TW201005822A (en) 2010-02-01

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