KR20100128333A - 기판 에칭 시스템 및 프로세스의 방법 및 장치 - Google Patents

기판 에칭 시스템 및 프로세스의 방법 및 장치 Download PDF

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Publication number
KR20100128333A
KR20100128333A KR1020107023432A KR20107023432A KR20100128333A KR 20100128333 A KR20100128333 A KR 20100128333A KR 1020107023432 A KR1020107023432 A KR 1020107023432A KR 20107023432 A KR20107023432 A KR 20107023432A KR 20100128333 A KR20100128333 A KR 20100128333A
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KR
South Korea
Prior art keywords
gas
chamber
etching
substrate
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020107023432A
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English (en)
Korean (ko)
Inventor
샤마 브이. 파마티
존 씨. 파
칼리드 시라주딘
에즈라 알. 골드
제임스 피. 크루즈
스코트 올스제프스키
로이 씨. 난고이
사라브지트 싱
더글라스 에이. 부흐버거
제리드 에이. 이
춘레이 장
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20100128333A publication Critical patent/KR20100128333A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Drying Of Semiconductors (AREA)
KR1020107023432A 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치 Ceased KR20100128333A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05

Publications (1)

Publication Number Publication Date
KR20100128333A true KR20100128333A (ko) 2010-12-07

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ID=41091536

Family Applications (1)

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KR1020107023432A Ceased KR20100128333A (ko) 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치

Country Status (6)

Country Link
US (1) US20090272717A1 (https=)
JP (1) JP5608157B2 (https=)
KR (1) KR20100128333A (https=)
CN (2) CN102446739B (https=)
TW (1) TWI538045B (https=)
WO (1) WO2009117565A2 (https=)

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KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

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JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
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TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
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US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
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US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
JP7401458B2 (ja) * 2018-05-22 2023-12-19 イーティーエックス コーポレーション 二次元材料を移すための方法及び装置
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
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KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
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US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange
CN119905397A (zh) * 2023-10-27 2025-04-29 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
CN102446739A (zh) 2012-05-09
WO2009117565A3 (en) 2009-11-12
WO2009117565A2 (en) 2009-09-24
JP5608157B2 (ja) 2014-10-15
TWI538045B (zh) 2016-06-11
CN101978479A (zh) 2011-02-16
US20090272717A1 (en) 2009-11-05
CN102446739B (zh) 2016-01-20
TW201005822A (en) 2010-02-01

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