CN102445644A - Mos器件的spice测试结构 - Google Patents
Mos器件的spice测试结构 Download PDFInfo
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- CN102445644A CN102445644A CN2010105080998A CN201010508099A CN102445644A CN 102445644 A CN102445644 A CN 102445644A CN 2010105080998 A CN2010105080998 A CN 2010105080998A CN 201010508099 A CN201010508099 A CN 201010508099A CN 102445644 A CN102445644 A CN 102445644A
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CN201010508099.8A CN102445644B (zh) | 2010-10-15 | 2010-10-15 | Mos器件的spice测试结构 |
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CN201010508099.8A CN102445644B (zh) | 2010-10-15 | 2010-10-15 | Mos器件的spice测试结构 |
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CN102445644A true CN102445644A (zh) | 2012-05-09 |
CN102445644B CN102445644B (zh) | 2014-02-12 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102928763A (zh) * | 2012-11-28 | 2013-02-13 | 杭州广立微电子有限公司 | 一种晶体管关键参数的可寻址测试电路及其测试方法 |
CN106249120A (zh) * | 2016-08-02 | 2016-12-21 | 上海集成电路研发中心有限公司 | 用于模型数据测试的中心晶片的挑选方法 |
CN112687663A (zh) * | 2020-12-16 | 2021-04-20 | 深圳市紫光同创电子有限公司 | 晶圆监控结构及监控方法 |
US11984370B2 (en) | 2021-07-09 | 2024-05-14 | Changxin Memory Technologies, Inc. | Semiconductor testing structure and method for forming same |
Citations (5)
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US4795964A (en) * | 1986-08-01 | 1989-01-03 | Texas Instruments Incorporated | Method and apparatus for measuring the capacitance of complementary field-effect transistor devices |
US5093586A (en) * | 1989-08-28 | 1992-03-03 | Mitsubishi Denki Kabushiki Kaisha | Voltage step-up circuit for non-volatile semiconductor memory |
DE10200649A1 (de) * | 2002-01-10 | 2003-07-24 | Infineon Technologies Ag | Verfahren zum Testen eines zellenartig aufgebauten Leistungshalbleiterbauelements |
CN101452042A (zh) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | 场效应管负温度不稳定性的晶片级可靠性平行测试方法 |
CN101702005A (zh) * | 2009-10-28 | 2010-05-05 | 上海宏力半导体制造有限公司 | 与时间相关电介质击穿的并行测试电路 |
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- 2010-10-15 CN CN201010508099.8A patent/CN102445644B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795964A (en) * | 1986-08-01 | 1989-01-03 | Texas Instruments Incorporated | Method and apparatus for measuring the capacitance of complementary field-effect transistor devices |
US5093586A (en) * | 1989-08-28 | 1992-03-03 | Mitsubishi Denki Kabushiki Kaisha | Voltage step-up circuit for non-volatile semiconductor memory |
DE10200649A1 (de) * | 2002-01-10 | 2003-07-24 | Infineon Technologies Ag | Verfahren zum Testen eines zellenartig aufgebauten Leistungshalbleiterbauelements |
CN101452042A (zh) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | 场效应管负温度不稳定性的晶片级可靠性平行测试方法 |
CN101702005A (zh) * | 2009-10-28 | 2010-05-05 | 上海宏力半导体制造有限公司 | 与时间相关电介质击穿的并行测试电路 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102928763A (zh) * | 2012-11-28 | 2013-02-13 | 杭州广立微电子有限公司 | 一种晶体管关键参数的可寻址测试电路及其测试方法 |
CN106249120A (zh) * | 2016-08-02 | 2016-12-21 | 上海集成电路研发中心有限公司 | 用于模型数据测试的中心晶片的挑选方法 |
CN106249120B (zh) * | 2016-08-02 | 2018-12-18 | 上海集成电路研发中心有限公司 | 用于模型数据测试的中心晶片的挑选方法 |
CN112687663A (zh) * | 2020-12-16 | 2021-04-20 | 深圳市紫光同创电子有限公司 | 晶圆监控结构及监控方法 |
CN112687663B (zh) * | 2020-12-16 | 2023-03-14 | 深圳市紫光同创电子有限公司 | 晶圆监控结构及监控方法 |
US11984370B2 (en) | 2021-07-09 | 2024-05-14 | Changxin Memory Technologies, Inc. | Semiconductor testing structure and method for forming same |
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Publication number | Publication date |
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CN102445644B (zh) | 2014-02-12 |
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