CN102443758A - 镀膜件及其制备方法 - Google Patents

镀膜件及其制备方法 Download PDF

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CN102443758A
CN102443758A CN2010102990205A CN201010299020A CN102443758A CN 102443758 A CN102443758 A CN 102443758A CN 2010102990205 A CN2010102990205 A CN 2010102990205A CN 201010299020 A CN201010299020 A CN 201010299020A CN 102443758 A CN102443758 A CN 102443758A
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rete
plated film
photoresist
preparation
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张新倍
陈文荣
蒋焕梧
陈正士
林顺茂
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN2010102990205A priority Critical patent/CN102443758A/zh
Priority to US13/172,209 priority patent/US20120088081A1/en
Publication of CN102443758A publication Critical patent/CN102443758A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Abstract

本发明提供一种镀膜件，其包括基材及形成于基材表面的膜层，该膜层由若干不连续的膜层区域组成，每一膜层区域的面积为0.001～0.025mm2，相邻膜层区域的间距为0.02～0.04mm。本发明还提供上述镀膜件的制备方法，其包括如下步骤：提供基材；在该基材需镀膜的表面全部喷涂光阻剂；对喷涂有光阻剂的基材依次进行热处理及自然冷却处理，使基材的表面以若干不连续的区域露出；在该基材及光阻剂的表面形成一膜层；去除所述光阻剂及形成于光阻剂表面的膜层。本发明制备的镀膜件表面具有雾面效果、外观柔和、质感良好。本发明镀膜件的制备方法避免了复杂的曝光显影工序，工艺更简单及易于操作。

Description

镀膜件及其制备方法
技术领域
本发明涉及一种镀膜件及其制备方法。
背景技术
在电子产品表面制备装饰图案的方法有很多。利用PVD镀层薄膜在基材表面形成所需的图案，由于制得的图案具有凹凸感，精度高，审美效果好等优点，因而备受青睐。该类方法通常是在基材表面沉积一薄膜层或多薄膜层，再通过激光雕刻或化学蚀刻的方式形成所需的图案效果；或是先在基材上形成一感光遮蔽层，采用曝光显影等化学法去除需形成图案处的感光遮蔽物，再在露出的基材上沉积膜层以形成所需的图案。
由于产品设计需要，有时需在产品表面形成具有雾面效果的膜层。传统的以PVD镀膜法在基材表面形成具有雾面效果的膜层的工艺步骤为：在基材上喷涂一感光遮蔽层；再对感光遮蔽层进行曝光显影使基材的部分表面以不连续的细小区域露出；然后进行镀膜；最后去除遮蔽层。然而，该方法工艺步骤繁琐，且采用曝光显影技术使基材的表面以不连续的细小区域露出的技术难以实现。
发明内容
有鉴于此，有必要提供一种表面具有雾面效果的镀膜件。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基材及形成于基材表面的膜层，该膜层由若干不连续的膜层区域组成，每一膜层区域的面积为0.001～0.025mm2，相邻膜层区域的间距为0.02～0.04mm。
一种镀膜件的制备方法，其包括如下步骤：
提供基材；
在该基材需镀膜的表面全部喷涂光阻剂；
对喷涂有光阻剂的基材依次进行热处理及自然冷却处理，使基材的表面以若干不连续的区域露出；
在该基材及光阻剂的表面形成一膜层；
去除所述光阻剂及形成于光阻剂表面的膜层。
本发明制备的镀膜件表面具有雾面效果、外观柔和、质感良好。本发明镀膜件的制备方法避免了复杂的曝光显影工序，工艺更简单及易于操作。
附图说明
图1为本发明一较佳实施例喷涂有光阻剂的基材经热处理及冷却处理后的局部显微镜放大图(放大倍数：50)。
主要元件符号说明
光阻剂区域    11
暴露区域      13
具体实施方式
本发明一较佳实施方式的镀膜件，其包括基材及形成于基材表面的膜层，该膜层由若干不连续的膜层区域组成。所述每一膜层区域的面积可为0.001～0.025mm2，相邻膜层区域的间距可为0.02～0.04mm。所述膜层区域可为形状不规则的点状、方块状。该若干不连续的膜层区域可呈现出雾面的外观，可作为装饰镀层。
该基材可为不锈钢、铝合金或镁合金等金属材料，也可为玻璃等非金属材料。
该膜层可以磁控溅射的方式形成。该膜层的成份可为金属、金属氧化物、金属碳化物、金属氮化物、金属碳氧化物或金属氮氧化物中的一种或一种以上。
本发明一较佳实施方式镀膜件的制备方法包括如下步骤：
提供一基材，该基材可为玻璃、不锈钢、铝合金或镁合金。
在该基材需镀膜的表面全部喷涂光阻剂，以遮蔽基材。所述光阻剂为正光阻剂，购于奇美实业股份有限公司。所述喷涂的光阻剂的厚度可为10～40μm。
请参阅图1，将喷涂有所述光阻剂的基材进行热处理，以使所述光阻剂熔融，之后冷却收缩使得基材的表面以若干不连续的细小区域露出。如图1所示，经上述处理后，所述基材表面形成有若干光阻剂区域11和若干暴露区域13，所述若干暴露区域13为不连续分布。所述热处理的温度可为150～260℃，热处理的时间可为15～60min。热处理以在250℃下处理40min较佳。在所述热处理过程中，光阻剂首先硬化成膜，随着热处理的进行，光阻剂熔融并有少量挥发。热处理一段时间后，开始对基材进行自然冷却，使光阻剂收缩而露出基材。
对经上述处理后的基材进行清洁。使用去离子水对基材进行喷淋，喷淋后烘干基材，烘干温度为110～130℃。
采用磁控溅射法在所述若干光阻剂区域11和若干暴露区域13形成一膜层。所述膜层的成份可根据镀膜件及镀膜件颜色设计的需要选择为金属、金属氧化物、金属碳化物、金属氮化物、金属碳氧化物、金属氮氧化物中的一种或一种以上。溅镀时使用相应的金属靶材，并通入氧气、氮气、乙炔等相应气体中的一种或一种以上作为反应气体。所述膜层的厚度可为0.5～1.5μm。
去除基材上的光阻剂，同时形成于该光阻剂表面的膜层也随着光阻剂的清除而自动剥离。将基材浸渍于8～10wt％的氢氧化钠或氢氧化钾溶液中，并控制溶液的温度为60～90℃，浸渍2～10min左右，即可将光阻剂全部清除，只剩下由若干不连续的膜层区域组成的膜层。所述每一膜层区域的面积可为0.001～0.025mm2，相邻膜层区域的间距可为0.02～0.04mm。该若干不连续的膜层区域可呈现出雾面的外观。
本发明制备的镀膜件表面具有雾面效果、外观柔和、质感良好。本发明镀膜件的制备方法避免了复杂的曝光显影工序，工艺更简单及易于操作。

Claims (10)

1.一种镀膜件，其包括基材及形成于基材表面的膜层，其特征在于：该膜层由若干不连续的膜层区域组成，每一膜层区域的面积为0.001～0.025mm2，相邻膜层区域的间距为0.02～0.04mm。
2.如权利要求1所述的镀膜件，其特征在于：该基材为玻璃、不锈钢、铝合金或镁合金。
3.如权利要求1所述的镀膜件，其特征在于：该膜层以磁控溅射的方式形成，其成份为金属、金属氧化物、金属碳化物、金属氮化物、金属碳氧化物、金属氮氧化物中的一种或一种以上。
4.一种镀膜件的制备方法，其包括如下步骤：
提供基材；
在该基材需镀膜的表面全部喷涂光阻剂；
对喷涂有光阻剂的基材依次进行热处理及自然冷却处理，使基材的表面以若干不连续的区域露出；
在该基材及光阻剂的表面形成一膜层；
去除所述光阻剂及形成于光阻剂表面的膜层。
5.如权利要求4所述的镀膜件的制备方法，其特征在于：所述喷涂的光阻剂的厚度为10～40μm。
6.如权利要求4所述的镀膜件的制备方法，其特征在于：所述膜层的成份为金属、金属氧化物、金属碳化物、金属氮化物、金属碳氧化物、金属氮氧化物中的一种或一种以上。
7.如权利要求6所述的镀膜件的制备方法，其特征在于：所述膜层的形成步骤以如下方式实现：采用磁控溅射法，使用相应的金属靶材，并以氧气、氮气、乙炔中的一种或一种以上为反应气体。
8.如权利要求4所述的镀膜件的制备方法，其特征在于：所述热处理的温度为150～260℃，热处理的时间为15～60min。
9.如权利要求4所述的镀膜件的制备方法，其特征在于：去除所述光阻剂及形成于光阻剂表面的膜层通过如下方式实现：将基材浸渍于8～10wt％的氢氧化钠或氢氧化钾溶液中，控制溶液的温度为60～90℃，浸渍时间为2～10min。
10.如权利要求4所述的镀膜件的制备方法，其特征在于：所述形成的膜层的厚度为0.5～1.5μm。
CN2010102990205A 2010-10-06 2010-10-06 镀膜件及其制备方法 Pending CN102443758A (zh)

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US13/172,209 US20120088081A1 (en) 2010-10-06 2011-06-29 Coated article and method of making the same

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689291A (en) * 1985-08-30 1987-08-25 Xerox Corporation Pedestal-type microlens fabrication process
US20050148147A1 (en) * 2003-12-30 2005-07-07 Steven Keating Amorphous etch stop for the anisotropic etching of substrates
CN1721889A (zh) * 2004-07-15 2006-01-18 肖特股份公司 在基片上制作带图形光学滤波层的方法
WO2009085003A1 (en) * 2007-12-27 2009-07-09 Rolling Optics Ab Synthetic integral image device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4910294B2 (ja) * 2005-02-17 2012-04-04 大日本印刷株式会社 カラーフィルタ基板および液晶表示パネル
EP2125361B1 (en) * 2006-12-28 2019-01-23 3M Innovative Properties Company Nucleation layer for thin film metal layer formation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689291A (en) * 1985-08-30 1987-08-25 Xerox Corporation Pedestal-type microlens fabrication process
US20050148147A1 (en) * 2003-12-30 2005-07-07 Steven Keating Amorphous etch stop for the anisotropic etching of substrates
CN1721889A (zh) * 2004-07-15 2006-01-18 肖特股份公司 在基片上制作带图形光学滤波层的方法
WO2009085003A1 (en) * 2007-12-27 2009-07-09 Rolling Optics Ab Synthetic integral image device

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